BE780695A - Procede de fabrication d'un transistor a effet de champ - Google Patents
Procede de fabrication d'un transistor a effet de champInfo
- Publication number
- BE780695A BE780695A BE780695A BE780695A BE780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- field
- effect transistor
- transistor
- effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12552871A | 1971-03-18 | 1971-03-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE780695A true BE780695A (fr) | 1972-07-03 |
Family
ID=22420128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE780695A BE780695A (fr) | 1971-03-18 | 1972-03-15 | Procede de fabrication d'un transistor a effet de champ |
Country Status (8)
Country | Link |
---|---|
US (1) | US3700978A (fr) |
JP (1) | JPS5225076B1 (fr) |
BE (1) | BE780695A (fr) |
DE (1) | DE2212489C3 (fr) |
FR (1) | FR2130424B1 (fr) |
GB (1) | GB1376492A (fr) |
IT (1) | IT953974B (fr) |
NL (1) | NL155399B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3971057A (en) * | 1973-08-21 | 1976-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Lateral photodetector of improved sensitivity |
CA1049127A (fr) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Dispositifs a semiconducteur avec rayonnement thermique et concentration de courant ameliores |
US4161739A (en) * | 1977-10-27 | 1979-07-17 | The United States Of America As Represented By The Secretary Of The Navy | Microwave InP/SiO2 insulated gate field effect transistor |
US4252580A (en) * | 1977-10-27 | 1981-02-24 | Messick Louis J | Method of producing a microwave InP/SiO2 insulated gate field effect transistor |
US4194021A (en) * | 1977-10-27 | 1980-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Microwave InP/SiO2 insulated gate field effect transistor |
US4160984A (en) * | 1977-11-14 | 1979-07-10 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
US4244097A (en) * | 1979-03-15 | 1981-01-13 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
NL8003336A (nl) * | 1979-06-12 | 1980-12-16 | Dearnaley G | Werkwijze voor de vervaardiging van een halfgeleider- inrichting. |
US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
JPH07118484B2 (ja) * | 1987-10-09 | 1995-12-18 | 沖電気工業株式会社 | ショットキーゲート電界効果トランジスタの製造方法 |
JPH05299433A (ja) * | 1992-04-24 | 1993-11-12 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
GB1140579A (en) * | 1966-08-19 | 1969-01-22 | Standard Telephones Cables Ltd | Method of making semiconductor devices and devices made thereby |
DE1564177A1 (de) * | 1966-09-03 | 1969-12-18 | Ibm Deutschland | Verfahren zur Herstellung von Halbleiterbauelementen |
NL6807053A (fr) * | 1967-05-20 | 1968-11-21 | ||
GB1233545A (fr) * | 1967-08-18 | 1971-05-26 | ||
US3483443A (en) * | 1967-09-28 | 1969-12-09 | Hughes Aircraft Co | Diode having large capacitance change related to minimal applied voltage |
US3563809A (en) * | 1968-08-05 | 1971-02-16 | Hughes Aircraft Co | Method of making semiconductor devices with ion beams |
-
1971
- 1971-03-18 US US125528A patent/US3700978A/en not_active Expired - Lifetime
-
1972
- 1972-03-15 DE DE2212489A patent/DE2212489C3/de not_active Expired
- 1972-03-15 BE BE780695A patent/BE780695A/fr unknown
- 1972-03-16 GB GB1224372A patent/GB1376492A/en not_active Expired
- 1972-03-17 FR FR7209520A patent/FR2130424B1/fr not_active Expired
- 1972-03-17 JP JP47026697A patent/JPS5225076B1/ja active Pending
- 1972-03-17 NL NL727203614A patent/NL155399B/xx unknown
- 1972-03-17 IT IT67858/72A patent/IT953974B/it active
Also Published As
Publication number | Publication date |
---|---|
NL7203614A (fr) | 1972-09-20 |
DE2212489A1 (de) | 1972-10-05 |
FR2130424B1 (fr) | 1974-09-13 |
NL155399B (nl) | 1977-12-15 |
GB1376492A (en) | 1974-12-04 |
DE2212489B2 (de) | 1974-01-17 |
JPS5225076B1 (fr) | 1977-07-05 |
IT953974B (it) | 1973-08-10 |
FR2130424A1 (fr) | 1972-11-03 |
DE2212489C3 (de) | 1974-08-15 |
US3700978A (en) | 1972-10-24 |
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