IT953974B - Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo - Google Patents

Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo

Info

Publication number
IT953974B
IT953974B IT67858/72A IT6785872A IT953974B IT 953974 B IT953974 B IT 953974B IT 67858/72 A IT67858/72 A IT 67858/72A IT 6785872 A IT6785872 A IT 6785872A IT 953974 B IT953974 B IT 953974B
Authority
IT
Italy
Prior art keywords
field effect
procedure
effect transistor
manufacturing
effect transistors
Prior art date
Application number
IT67858/72A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT953974B publication Critical patent/IT953974B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
IT67858/72A 1971-03-18 1972-03-17 Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo IT953974B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12552871A 1971-03-18 1971-03-18

Publications (1)

Publication Number Publication Date
IT953974B true IT953974B (it) 1973-08-10

Family

ID=22420128

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67858/72A IT953974B (it) 1971-03-18 1972-03-17 Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo

Country Status (8)

Country Link
US (1) US3700978A (it)
JP (1) JPS5225076B1 (it)
BE (1) BE780695A (it)
DE (1) DE2212489C3 (it)
FR (1) FR2130424B1 (it)
GB (1) GB1376492A (it)
IT (1) IT953974B (it)
NL (1) NL155399B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971057A (en) * 1973-08-21 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Lateral photodetector of improved sensitivity
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US4194021A (en) * 1977-10-27 1980-03-18 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4161739A (en) * 1977-10-27 1979-07-17 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4252580A (en) * 1977-10-27 1981-02-24 Messick Louis J Method of producing a microwave InP/SiO2 insulated gate field effect transistor
US4160984A (en) * 1977-11-14 1979-07-10 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
US4244097A (en) * 1979-03-15 1981-01-13 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH05299433A (ja) * 1992-04-24 1993-11-12 Toshiba Corp ヘテロ接合バイポーラトランジスタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
GB1140579A (en) * 1966-08-19 1969-01-22 Standard Telephones Cables Ltd Method of making semiconductor devices and devices made thereby
DE1564177A1 (de) * 1966-09-03 1969-12-18 Ibm Deutschland Verfahren zur Herstellung von Halbleiterbauelementen
NL6807053A (it) * 1967-05-20 1968-11-21
GB1233545A (it) * 1967-08-18 1971-05-26
US3483443A (en) * 1967-09-28 1969-12-09 Hughes Aircraft Co Diode having large capacitance change related to minimal applied voltage
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams

Also Published As

Publication number Publication date
NL155399B (nl) 1977-12-15
JPS5225076B1 (it) 1977-07-05
DE2212489C3 (de) 1974-08-15
GB1376492A (en) 1974-12-04
FR2130424B1 (it) 1974-09-13
DE2212489A1 (de) 1972-10-05
NL7203614A (it) 1972-09-20
BE780695A (fr) 1972-07-03
US3700978A (en) 1972-10-24
DE2212489B2 (de) 1974-01-17
FR2130424A1 (it) 1972-11-03

Similar Documents

Publication Publication Date Title
IT998626B (it) Metodo per stabilizzare transistori ad effetto di campo
IT975001B (it) Modulo circuitale comprendente un transistore a effetto di campo e un transistore bipolare
DK132145B (da) Felteffekttransistor med isoleret styreelektrode.
AT351593B (de) Feldeffekttransistorverstaerker
IT980547B (it) Transistore ripolare e procedimento per la sua fabbricazione
IT1058321B (it) Transistore complementare ad effetto di campo
IT962927B (it) Transistore ad effetto di campo
NL7513422A (nl) Transistorversterker met veldeffecttransistoren.
IT1070009B (it) Transistore ad effetto di campo perfezionato
IT959692B (it) Contatore utilizzante transistori ad effetto di campo a porta isolata
IT953974B (it) Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo
DE2255171B2 (de) Isolierschicht-feldeffekttransistor
AT353843B (de) Feldeffekttransistor-verstaerker
BE772314A (fr) Procede de fabrication d'embases de transistors
AT321004B (de) Matrixspeicher aus zwei Feldeffekttransistoren
IT979867B (it) Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali
AT321363B (de) Transistorverstärker
IT981799B (it) Struttura di semiconduttore con soglia di campo incrementata e procedimento per produrla
IT949059B (it) Procedimento per la fabbricazione di transistori planari a valanga
AT348589B (de) Feldeffekttransistor
BR6908290D0 (pt) Transistor de efeito de campo
NL165334C (nl) Veldeffecttransistor.
SE387473B (sv) Halvledareanordning och sett att framstella densamma
CH545038A (de) Transistorverstärker
IT998749B (it) Transistore ad eppetto di campo perfezionato