IT998626B - Metodo per stabilizzare transistori ad effetto di campo - Google Patents

Metodo per stabilizzare transistori ad effetto di campo

Info

Publication number
IT998626B
IT998626B IT29048/73A IT2904873A IT998626B IT 998626 B IT998626 B IT 998626B IT 29048/73 A IT29048/73 A IT 29048/73A IT 2904873 A IT2904873 A IT 2904873A IT 998626 B IT998626 B IT 998626B
Authority
IT
Italy
Prior art keywords
field effect
effect transistors
stabilizing field
stabilizing
transistors
Prior art date
Application number
IT29048/73A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT998626B publication Critical patent/IT998626B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
IT29048/73A 1972-11-21 1973-09-18 Metodo per stabilizzare transistori ad effetto di campo IT998626B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30860872A 1972-11-21 1972-11-21

Publications (1)

Publication Number Publication Date
IT998626B true IT998626B (it) 1976-02-20

Family

ID=23194653

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29048/73A IT998626B (it) 1972-11-21 1973-09-18 Metodo per stabilizzare transistori ad effetto di campo

Country Status (9)

Country Link
US (1) US3793090A (it)
JP (1) JPS5422279B2 (it)
BE (1) BE805959A (it)
CA (1) CA996279A (it)
CH (1) CH555597A (it)
FR (1) FR2207359B1 (it)
GB (1) GB1396673A (it)
IT (1) IT998626B (it)
SE (1) SE384761B (it)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911168A (en) * 1973-06-01 1975-10-07 Fairchild Camera Instr Co Method for forming a continuous layer of silicon dioxide over a substrate
US3892606A (en) * 1973-06-28 1975-07-01 Ibm Method for forming silicon conductive layers utilizing differential etching rates
US3943015A (en) * 1973-06-29 1976-03-09 International Business Machines Corporation Method for high temperature semiconductor processing
US3886000A (en) * 1973-11-05 1975-05-27 Ibm Method for controlling dielectric isolation of a semiconductor device
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion
US3951693A (en) * 1974-01-17 1976-04-20 Motorola, Inc. Ion-implanted self-aligned transistor device including the fabrication method therefor
US4056825A (en) * 1975-06-30 1977-11-01 International Business Machines Corporation FET device with reduced gate overlap capacitance of source/drain and method of manufacture
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
US4057821A (en) * 1975-11-20 1977-11-08 Nitron Corporation/Mcdonnell-Douglas Corporation Non-volatile semiconductor memory device
US4051273A (en) * 1975-11-26 1977-09-27 Ibm Corporation Field effect transistor structure and method of making same
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US4123834A (en) * 1977-06-14 1978-11-07 Westinghouse Electric Corp. Overlapping electrode structure for solid state devices
US4587711A (en) * 1978-05-26 1986-05-13 Rockwell International Corporation Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4506437A (en) * 1978-05-26 1985-03-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4192059A (en) * 1978-06-06 1980-03-11 Rockwell International Corporation Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines
US4455737A (en) * 1978-05-26 1984-06-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5918677A (ja) * 1982-07-22 1984-01-31 Nec Corp 絶縁ゲ−ト電界効果型半導体装置の製造方法
JPS61140175A (ja) * 1984-12-13 1986-06-27 Semiconductor Energy Lab Co Ltd 被膜作製方法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JPS6269664A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 相補ｍｏｓ型半導体装置
JPS62128556A (ja) * 1985-11-29 1987-06-10 Fujitsu Ltd 半導体装置
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
US4851370A (en) * 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
JPH0758701B2 (ja) * 1989-06-08 1995-06-21 株式会社東芝 半導体装置の製造方法
US5237188A (en) * 1990-11-28 1993-08-17 Kabushiki Kaisha Toshiba Semiconductor device with nitrided gate insulating film
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US5387540A (en) * 1993-09-30 1995-02-07 Motorola Inc. Method of forming trench isolation structure in an integrated circuit
US5629221A (en) * 1995-11-24 1997-05-13 National Science Council Of Republic Of China Process for suppressing boron penetration in BF2 + -implanted P+ -poly-Si gate using inductively-coupled nitrogen plasma
US5910339A (en) * 1996-08-22 1999-06-08 Cornell Research Foundation, Inc. Fabrication of atomic step-free surfaces
US5960302A (en) * 1996-12-31 1999-09-28 Lucent Technologies, Inc. Method of making a dielectric for an integrated circuit
CN100442454C (zh) * 2000-09-19 2008-12-10 马特森技术公司 形成介电薄膜的方法
JP2002170888A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP4615755B2 (ja) * 2001-04-04 2011-01-19 セイコーインスツル株式会社 半導体装置の製造方法
JP4454883B2 (ja) * 2001-04-26 2010-04-21 東京エレクトロン株式会社 半導体装置の製造方法
JP4831885B2 (ja) * 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7033894B1 (en) * 2003-08-05 2006-04-25 Advanced Micro Devices, Inc. Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing
KR100707169B1 (ko) * 2003-12-12 2007-04-13 삼성전자주식회사 메모리 소자 및 그 제조 방법
US20060014624A1 (en) * 2004-07-15 2006-01-19 Biljana Mikijelj High dielectric strength monolithic Si3N4
KR101009646B1 (ko) * 2007-08-01 2011-01-19 삼성모바일디스플레이주식회사 박막 트랜지스터 및 이를 구비한 표시 장치
US8941171B2 (en) * 2010-07-02 2015-01-27 Micron Technology, Inc. Flatband voltage adjustment in a semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514676A (en) * 1967-10-25 1970-05-26 North American Rockwell Insulated gate complementary field effect transistors gate structure
US3615873A (en) * 1969-06-03 1971-10-26 Sprague Electric Co Method of stabilizing mos devices
US3670403A (en) * 1970-03-19 1972-06-20 Gen Electric Three masking step process for fabricating insulated gate field effect transistors
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure

Also Published As

Publication number Publication date
DE2355605B2 (de) 1977-02-17
GB1396673A (en) 1975-06-04
FR2207359B1 (it) 1977-08-12
SE384761B (sv) 1976-05-17
FR2207359A1 (it) 1974-06-14
JPS4984180A (it) 1974-08-13
BE805959A (fr) 1974-02-01
JPS5422279B2 (it) 1979-08-06
DE2355605A1 (de) 1974-06-12
CA996279A (en) 1976-08-31
CH555597A (de) 1974-10-31
US3793090A (en) 1974-02-19

Similar Documents

Publication Publication Date Title
IT998626B (it) Metodo per stabilizzare transistori ad effetto di campo
AT351593B (de) Feldeffekttransistorverstaerker
BG20352A3 (bg) Метод за получаване на пиридил-фенил оксиалкани
IT1021699B (it) Amplificatore a transistor ad ef fetto di campo
IT962927B (it) Transistore ad effetto di campo
IT978445B (it) Metodo per la preparazione di ammidosilani
AT353843B (de) Feldeffekttransistor-verstaerker
IT1021823B (it) Amplificatore a transistor a effetto di campo
IT987462B (it) Apparato di riproduzione
BG21861A3 (bg) Метод за получаване на 3-хидрокси-цефалоспорини
BG22817A3 (bg) Метод за получаване на 1-хидрокси-2-пиридони
AT321363B (de) Transistorverstärker
BG20782A3 (bg) Метод за получаване на производни на 1- фенокси 3- амино - пропан -2-ол
AT348589B (de) Feldeffekttransistor
IT994932B (it) Metodo per la produzione di adiponitrile
IT1002034B (it) Procedimento di idroformilazione
IT981696B (it) Metodo per l eliminazione di rifiuti
BG20570A3 (bg) Метод за получаване на n-(етан-2-ол)-2-метокси-4-ацетамино-5- хлорбензамид
IT984965B (it) Apparecchio per la eliminazione di peluria
IT998749B (it) Transistore ad eppetto di campo perfezionato
IT978468B (it) Guarnizione di tenuta per cuscinetto
IT951540B (it) Metodo per il trattamento di pellicole
IT995263B (it) Metodo per il trattamento di microorganismi
IT987699B (it) Apparato per l elaborazione di cati
SE404055B (sv) Sker for markborrning