IT962927B - Transistore ad effetto di campo - Google Patents
Transistore ad effetto di campoInfo
- Publication number
- IT962927B IT962927B IT2709372A IT2709372A IT962927B IT 962927 B IT962927 B IT 962927B IT 2709372 A IT2709372 A IT 2709372A IT 2709372 A IT2709372 A IT 2709372A IT 962927 B IT962927 B IT 962927B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6328171 | 1971-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT962927B true IT962927B (it) | 1973-12-31 |
Family
ID=13224766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2709372A IT962927B (it) | 1971-07-17 | 1972-07-17 | Transistore ad effetto di campo |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3806773A (it) |
| CA (1) | CA967683A (it) |
| DE (1) | DE2234973B2 (it) |
| FR (1) | FR2146323B1 (it) |
| GB (1) | GB1400541A (it) |
| IT (1) | IT962927B (it) |
| NL (1) | NL7209822A (it) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5024084A (it) * | 1973-07-05 | 1975-03-14 | ||
| US3879640A (en) * | 1974-02-11 | 1975-04-22 | Rca Corp | Protective diode network for MOS devices |
| GB1569897A (en) * | 1975-12-31 | 1980-06-25 | Ibm | Field effect transistor |
| US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
| JPS55136726A (en) * | 1979-04-11 | 1980-10-24 | Nec Corp | High voltage mos inverter and its drive method |
| JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
| US4609931A (en) * | 1981-07-17 | 1986-09-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Input protection MOS semiconductor device with zener breakdown mechanism |
| JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
| JPS5836169A (ja) * | 1981-08-28 | 1983-03-03 | Fuji Electric Co Ltd | サイリスタ監視装置 |
| IT1186338B (it) * | 1985-10-29 | 1987-11-26 | Sgs Microelettronica Spa | Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione |
| US4890143A (en) * | 1988-07-28 | 1989-12-26 | General Electric Company | Protective clamp for MOS gated devices |
| US5212398A (en) * | 1989-11-30 | 1993-05-18 | Kabushiki Kaisha Toshiba | BiMOS structure having a protective diode |
| DE69327320T2 (de) * | 1993-09-30 | 2000-05-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung |
| EP0657933B1 (en) * | 1993-12-13 | 2000-06-28 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrated structure active clamp for the protection of power semiconductor devices against overvoltages |
| US6825504B2 (en) * | 1999-05-03 | 2004-11-30 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
| US6949802B2 (en) * | 2003-11-20 | 2005-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection structure |
| JP2006294719A (ja) * | 2005-04-07 | 2006-10-26 | Oki Electric Ind Co Ltd | 半導体装置 |
| US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3469155A (en) * | 1966-09-23 | 1969-09-23 | Westinghouse Electric Corp | Punch-through means integrated with mos type devices for protection against insulation layer breakdown |
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
| US3512058A (en) * | 1968-04-10 | 1970-05-12 | Rca Corp | High voltage transient protection for an insulated gate field effect transistor |
| NL162792C (nl) * | 1969-03-01 | 1980-06-16 | Philips Nv | Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden. |
-
1972
- 1972-07-07 US US00269765A patent/US3806773A/en not_active Expired - Lifetime
- 1972-07-12 GB GB3262572A patent/GB1400541A/en not_active Expired
- 1972-07-14 CA CA147,160A patent/CA967683A/en not_active Expired
- 1972-07-14 NL NL7209822A patent/NL7209822A/xx not_active Application Discontinuation
- 1972-07-17 IT IT2709372A patent/IT962927B/it active
- 1972-07-17 DE DE2234973A patent/DE2234973B2/de not_active Ceased
- 1972-07-17 FR FR7225759A patent/FR2146323B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1400541A (en) | 1975-07-16 |
| US3806773A (en) | 1974-04-23 |
| FR2146323B1 (it) | 1975-03-07 |
| NL7209822A (it) | 1973-01-19 |
| CA967683A (en) | 1975-05-13 |
| DE2234973B2 (de) | 1974-10-03 |
| DE2234973A1 (de) | 1973-02-01 |
| FR2146323A1 (it) | 1973-03-02 |
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