IT1070009B - Transistore ad effetto di campo perfezionato - Google Patents
Transistore ad effetto di campo perfezionatoInfo
- Publication number
- IT1070009B IT1070009B IT7630276A IT3027676A IT1070009B IT 1070009 B IT1070009 B IT 1070009B IT 7630276 A IT7630276 A IT 7630276A IT 3027676 A IT3027676 A IT 3027676A IT 1070009 B IT1070009 B IT 1070009B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- field effect
- effect transistor
- transistor
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64577175A | 1975-12-31 | 1975-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1070009B true IT1070009B (it) | 1985-03-25 |
Family
ID=24590420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7630276A IT1070009B (it) | 1975-12-31 | 1976-12-10 | Transistore ad effetto di campo perfezionato |
Country Status (7)
Country | Link |
---|---|
US (1) | US4070687A (it) |
JP (1) | JPS5283181A (it) |
CA (1) | CA1057418A (it) |
DE (1) | DE2655998C2 (it) |
FR (1) | FR2337428A1 (it) |
GB (1) | GB1569897A (it) |
IT (1) | IT1070009B (it) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4173791A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory array |
US4485390A (en) * | 1978-03-27 | 1984-11-27 | Ncr Corporation | Narrow channel FET |
US4212683A (en) * | 1978-03-27 | 1980-07-15 | Ncr Corporation | Method for making narrow channel FET |
JPS54144183A (en) * | 1978-05-01 | 1979-11-10 | Handotai Kenkyu Shinkokai | Insulated gate type electrostatic induction transistor and semiconductor integrated circuit |
JPS5561069A (en) * | 1978-10-31 | 1980-05-08 | Fujitsu Ltd | Manufacture of semiconductor device |
US4282646A (en) * | 1979-08-20 | 1981-08-11 | International Business Machines Corporation | Method of making a transistor array |
US4329186A (en) * | 1979-12-20 | 1982-05-11 | Ibm Corporation | Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices |
US4369072A (en) * | 1981-01-22 | 1983-01-18 | International Business Machines Corp. | Method for forming IGFET devices having improved drain voltage characteristics |
EP0069649B1 (en) * | 1981-07-10 | 1989-04-19 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof |
US5118631A (en) * | 1981-07-10 | 1992-06-02 | Loral Fairchild Corporation | Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof |
JPS5833870A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | 半導体装置 |
FR2529715A1 (fr) * | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede d'optimisation du dopage dans un transistor mos |
JPS59126674A (ja) * | 1983-01-10 | 1984-07-21 | Toshiba Corp | 情報記憶用半導体装置 |
JPS62283667A (ja) * | 1986-05-31 | 1987-12-09 | Toshiba Corp | 半導体装置の製造方法 |
JPS63119574A (ja) * | 1986-11-07 | 1988-05-24 | Toshiba Corp | 半導体装置の製造方法 |
US5122474A (en) * | 1988-06-23 | 1992-06-16 | Dallas Semiconductor Corporation | Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough |
US4906588A (en) * | 1988-06-23 | 1990-03-06 | Dallas Semiconductor Corporation | Enclosed buried channel transistor |
US4943537A (en) * | 1988-06-23 | 1990-07-24 | Dallas Semiconductor Corporation | CMOS integrated circuit with reduced susceptibility to PMOS punchthrough |
EP0513415A1 (en) * | 1991-05-16 | 1992-11-19 | Kabushiki Kaisha Toshiba | Insulated gate FET having double-layered wells of low and high impurity concentrations and method of manufacturing the same |
JP3212150B2 (ja) * | 1992-08-07 | 2001-09-25 | 株式会社日立製作所 | 半導体装置 |
JPH10214964A (ja) * | 1997-01-30 | 1998-08-11 | Oki Electric Ind Co Ltd | Mosfet及びその製造方法 |
US11552169B2 (en) * | 2019-03-27 | 2023-01-10 | Intel Corporation | Source or drain structures with phosphorous and arsenic co-dopants |
US11804523B2 (en) * | 2019-09-24 | 2023-10-31 | Intel Corporation | High aspect ratio source or drain structures with abrupt dopant profile |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1153428A (en) * | 1965-06-18 | 1969-05-29 | Philips Nv | Improvements in Semiconductor Devices. |
GB1316555A (it) * | 1969-08-12 | 1973-05-09 | ||
US3806773A (en) * | 1971-07-17 | 1974-04-23 | Sony Corp | Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action |
US3877055A (en) * | 1972-11-13 | 1975-04-08 | Motorola Inc | Semiconductor memory device |
US3883372A (en) * | 1973-07-11 | 1975-05-13 | Westinghouse Electric Corp | Method of making a planar graded channel MOS transistor |
JPS571904B2 (it) * | 1973-07-12 | 1982-01-13 | ||
JPS5036087A (it) * | 1973-07-13 | 1975-04-04 | ||
US3996655A (en) * | 1973-12-14 | 1976-12-14 | Texas Instruments Incorporated | Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product |
US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
-
1976
- 1976-11-25 GB GB49288/76A patent/GB1569897A/en not_active Expired
- 1976-11-29 FR FR7636401A patent/FR2337428A1/fr active Granted
- 1976-12-10 IT IT7630276A patent/IT1070009B/it active
- 1976-12-10 JP JP14793076A patent/JPS5283181A/ja active Pending
- 1976-12-10 DE DE2655998A patent/DE2655998C2/de not_active Expired
- 1976-12-22 CA CA268,530A patent/CA1057418A/en not_active Expired
-
1977
- 1977-06-06 US US05/803,712 patent/US4070687A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4070687A (en) | 1978-01-24 |
JPS5283181A (en) | 1977-07-11 |
FR2337428A1 (fr) | 1977-07-29 |
DE2655998C2 (de) | 1986-01-30 |
GB1569897A (en) | 1980-06-25 |
FR2337428B1 (it) | 1980-10-24 |
DE2655998A1 (de) | 1977-07-14 |
CA1057418A (en) | 1979-06-26 |
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