FR2337428A1 - Transistor a effet de champ a canal composite et procede de fabrication - Google Patents

Transistor a effet de champ a canal composite et procede de fabrication

Info

Publication number
FR2337428A1
FR2337428A1 FR7636401A FR7636401A FR2337428A1 FR 2337428 A1 FR2337428 A1 FR 2337428A1 FR 7636401 A FR7636401 A FR 7636401A FR 7636401 A FR7636401 A FR 7636401A FR 2337428 A1 FR2337428 A1 FR 2337428A1
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
channel field
composite channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7636401A
Other languages
English (en)
Other versions
FR2337428B1 (fr
Inventor
Irving T Ho
Jacob Riseman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2337428A1 publication Critical patent/FR2337428A1/fr
Application granted granted Critical
Publication of FR2337428B1 publication Critical patent/FR2337428B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
FR7636401A 1975-12-31 1976-11-29 Transistor a effet de champ a canal composite et procede de fabrication Granted FR2337428A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64577175A 1975-12-31 1975-12-31

Publications (2)

Publication Number Publication Date
FR2337428A1 true FR2337428A1 (fr) 1977-07-29
FR2337428B1 FR2337428B1 (fr) 1980-10-24

Family

ID=24590420

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7636401A Granted FR2337428A1 (fr) 1975-12-31 1976-11-29 Transistor a effet de champ a canal composite et procede de fabrication

Country Status (7)

Country Link
US (1) US4070687A (fr)
JP (1) JPS5283181A (fr)
CA (1) CA1057418A (fr)
DE (1) DE2655998C2 (fr)
FR (1) FR2337428A1 (fr)
GB (1) GB1569897A (fr)
IT (1) IT1070009B (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0031020A2 (fr) * 1979-12-20 1981-07-01 International Business Machines Corporation Transistor à effet de champ DMOS et procédé de fabrication
EP0069649A2 (fr) * 1981-07-10 1983-01-12 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Structure anti-éblouissement auto-alignée pour dispositifs à couplage de charges et son procédé de fabrication
EP0073623A2 (fr) * 1981-08-24 1983-03-09 Hitachi, Ltd. Transistor à effet de champ d'électrode de porte isolée
FR2529715A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede d'optimisation du dopage dans un transistor mos
EP0856892A2 (fr) * 1997-01-30 1998-08-05 Oki Electric Industry Co., Ltd. MOSFET et méthode de fabrication

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173791A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS5561069A (en) * 1978-10-31 1980-05-08 Fujitsu Ltd Manufacture of semiconductor device
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
US5118631A (en) * 1981-07-10 1992-06-02 Loral Fairchild Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
JPS59126674A (ja) * 1983-01-10 1984-07-21 Toshiba Corp 情報記憶用半導体装置
JPS62283667A (ja) * 1986-05-31 1987-12-09 Toshiba Corp 半導体装置の製造方法
JPS63119574A (ja) * 1986-11-07 1988-05-24 Toshiba Corp 半導体装置の製造方法
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
EP0513415A1 (fr) * 1991-05-16 1992-11-19 Kabushiki Kaisha Toshiba TEC à grille isolée comprenant des puits à deux couches ayant des concentrations d'impurités faible et élevée et son procédé de fabrication
JP3212150B2 (ja) * 1992-08-07 2001-09-25 株式会社日立製作所 半導体装置
US11552169B2 (en) * 2019-03-27 2023-01-10 Intel Corporation Source or drain structures with phosphorous and arsenic co-dopants
US11804523B2 (en) * 2019-09-24 2023-10-31 Intel Corporation High aspect ratio source or drain structures with abrupt dopant profile

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1316555A (fr) * 1969-08-12 1973-05-09
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
JPS571904B2 (fr) * 1973-07-12 1982-01-13
JPS5036087A (fr) * 1973-07-13 1975-04-04
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0031020A2 (fr) * 1979-12-20 1981-07-01 International Business Machines Corporation Transistor à effet de champ DMOS et procédé de fabrication
EP0031020A3 (en) * 1979-12-20 1982-08-04 International Business Machines Corporation Dmos field effect transistor device and fabrication process
EP0069649A2 (fr) * 1981-07-10 1983-01-12 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Structure anti-éblouissement auto-alignée pour dispositifs à couplage de charges et son procédé de fabrication
EP0069649A3 (en) * 1981-07-10 1985-04-17 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
EP0073623A2 (fr) * 1981-08-24 1983-03-09 Hitachi, Ltd. Transistor à effet de champ d'électrode de porte isolée
EP0073623A3 (en) * 1981-08-24 1983-11-23 Hitachi, Ltd. Insulated gate field effect transistor
FR2529715A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede d'optimisation du dopage dans un transistor mos
EP0099787A1 (fr) * 1982-07-01 1984-02-01 Commissariat à l'Energie Atomique Procédé d'optimisation du dopage dans un transistor MOS
EP0856892A2 (fr) * 1997-01-30 1998-08-05 Oki Electric Industry Co., Ltd. MOSFET et méthode de fabrication
EP0856892A3 (fr) * 1997-01-30 1999-07-14 Oki Electric Industry Co., Ltd. MOSFET et méthode de fabrication

Also Published As

Publication number Publication date
CA1057418A (fr) 1979-06-26
US4070687A (en) 1978-01-24
DE2655998A1 (de) 1977-07-14
IT1070009B (it) 1985-03-25
GB1569897A (en) 1980-06-25
DE2655998C2 (de) 1986-01-30
JPS5283181A (en) 1977-07-11
FR2337428B1 (fr) 1980-10-24

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Legal Events

Date Code Title Description
ST Notification of lapse