FR2492166B1 - Transistor a effet de champ et son procede de fabrication - Google Patents

Transistor a effet de champ et son procede de fabrication

Info

Publication number
FR2492166B1
FR2492166B1 FR8119069A FR8119069A FR2492166B1 FR 2492166 B1 FR2492166 B1 FR 2492166B1 FR 8119069 A FR8119069 A FR 8119069A FR 8119069 A FR8119069 A FR 8119069A FR 2492166 B1 FR2492166 B1 FR 2492166B1
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8119069A
Other languages
English (en)
Other versions
FR2492166A1 (fr
Inventor
Henricus Godefridus Rafael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2492166A1 publication Critical patent/FR2492166A1/fr
Application granted granted Critical
Publication of FR2492166B1 publication Critical patent/FR2492166B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
FR8119069A 1980-10-15 1981-10-09 Transistor a effet de champ et son procede de fabrication Expired FR2492166B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8005673A NL8005673A (nl) 1980-10-15 1980-10-15 Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.

Publications (2)

Publication Number Publication Date
FR2492166A1 FR2492166A1 (fr) 1982-04-16
FR2492166B1 true FR2492166B1 (fr) 1986-06-20

Family

ID=19836015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8119069A Expired FR2492166B1 (fr) 1980-10-15 1981-10-09 Transistor a effet de champ et son procede de fabrication

Country Status (7)

Country Link
US (2) US4825267A (fr)
JP (1) JPS5795670A (fr)
CA (1) CA1171550A (fr)
DE (1) DE3140268A1 (fr)
FR (1) FR2492166B1 (fr)
GB (1) GB2085656B (fr)
NL (1) NL8005673A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368182A (ja) * 1991-06-17 1992-12-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
DE3230945A1 (de) * 1982-08-20 1984-02-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen eines feldeffekttransistors
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
JPH01151268A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp 半導体装置の製造方法
US5198378A (en) * 1988-10-31 1993-03-30 Texas Instruments Incorporated Process of fabricating elevated source/drain transistor
JP2551203B2 (ja) * 1990-06-05 1996-11-06 三菱電機株式会社 半導体装置
US5366925A (en) * 1993-09-27 1994-11-22 United Microelectronics Corporation Local oxidation of silicon by using aluminum spiking technology
JPH0878533A (ja) * 1994-08-31 1996-03-22 Nec Corp 半導体装置及びその製造方法
JPH11204782A (ja) * 1998-01-08 1999-07-30 Toshiba Corp 半導体装置およびその製造方法
EP1039529B1 (fr) 1999-03-22 2006-12-13 STMicroelectronics S.r.l. Procédé de fabrication d'une microstructure intégrée avec connexions enterrées, en particulier d'un microactionneur pour un disque dur
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756495A (fr) * 1969-09-23 1971-03-23 Int Standard Electric Corp Element de commutation electronique
US3837935A (en) * 1971-05-28 1974-09-24 Fujitsu Ltd Semiconductor devices and method of manufacturing the same
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
JPS5093779A (fr) * 1973-12-21 1975-07-26
JPS50134381A (fr) * 1974-04-10 1975-10-24
US4003126A (en) * 1974-09-12 1977-01-18 Canadian Patents And Development Limited Method of making metal oxide semiconductor devices
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
JPS5310982A (en) * 1976-07-19 1978-01-31 Hitachi Ltd Production of mis semiconductor device
DE2642615C2 (de) * 1976-09-22 1986-04-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
US4065783A (en) * 1976-10-18 1977-12-27 Paul Hsiung Ouyang Self-aligned double implanted short channel V-groove MOS device
DE2703871C2 (de) * 1977-01-31 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher mit wenigstens einem V-MOS-Transistor
US4398339A (en) * 1977-04-15 1983-08-16 Supertex, Inc. Fabrication method for high power MOS device
US4116720A (en) * 1977-12-27 1978-09-26 Burroughs Corporation Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance
US4152714A (en) * 1978-01-16 1979-05-01 Honeywell Inc. Semiconductor apparatus
US4353085A (en) * 1978-02-27 1982-10-05 Fujitsu Limited Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film
JPS5537250U (fr) * 1978-08-31 1980-03-10
NL7810549A (nl) * 1978-10-23 1980-04-25 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
JPS5612803A (en) * 1979-07-06 1981-02-07 Hitachi Ltd Controller for electric vehicle driven by induction motor
US4272302A (en) * 1979-09-05 1981-06-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
NL8006339A (nl) * 1979-11-21 1981-06-16 Hitachi Ltd Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
US4295924A (en) * 1979-12-17 1981-10-20 International Business Machines Corporation Method for providing self-aligned conductor in a V-groove device
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.

Also Published As

Publication number Publication date
GB2085656B (en) 1985-05-01
GB2085656A (en) 1982-04-28
CA1171550A (fr) 1984-07-24
US4937202A (en) 1990-06-26
FR2492166A1 (fr) 1982-04-16
NL8005673A (nl) 1982-05-03
US4825267A (en) 1989-04-25
JPS5795670A (en) 1982-06-14
DE3140268A1 (de) 1982-06-16

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Legal Events

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