FR2632775B1 - Transistor a effet de champ et procede de fabrication - Google Patents

Transistor a effet de champ et procede de fabrication

Info

Publication number
FR2632775B1
FR2632775B1 FR8907802A FR8907802A FR2632775B1 FR 2632775 B1 FR2632775 B1 FR 2632775B1 FR 8907802 A FR8907802 A FR 8907802A FR 8907802 A FR8907802 A FR 8907802A FR 2632775 B1 FR2632775 B1 FR 2632775B1
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8907802A
Other languages
English (en)
Other versions
FR2632775A1 (fr
Inventor
Kohno Yasutaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2632775A1 publication Critical patent/FR2632775A1/fr
Application granted granted Critical
Publication of FR2632775B1 publication Critical patent/FR2632775B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
FR8907802A 1988-06-13 1989-06-13 Transistor a effet de champ et procede de fabrication Expired - Lifetime FR2632775B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63146278A JPH022142A (ja) 1988-06-13 1988-06-13 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
FR2632775A1 FR2632775A1 (fr) 1989-12-15
FR2632775B1 true FR2632775B1 (fr) 1996-05-31

Family

ID=15404107

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8907802A Expired - Lifetime FR2632775B1 (fr) 1988-06-13 1989-06-13 Transistor a effet de champ et procede de fabrication

Country Status (3)

Country Link
US (1) US4997779A (fr)
JP (1) JPH022142A (fr)
FR (1) FR2632775B1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250453A (en) * 1989-04-12 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Production method of a semiconductor device
JP2553699B2 (ja) * 1989-04-12 1996-11-13 三菱電機株式会社 半導体装置の製造方法
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
FR2686734B1 (fr) * 1992-01-24 1994-03-11 Thomson Composants Microondes Procede de realisation d'un transistor.
JP2689888B2 (ja) * 1993-12-30 1997-12-10 日本電気株式会社 半導体装置及びその製造方法
US5604139A (en) * 1994-02-10 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure
JP3270278B2 (ja) * 1994-12-15 2002-04-02 東芝電子エンジニアリング株式会社 半導体装置及びその製造方法
US5907177A (en) * 1995-03-14 1999-05-25 Matsushita Electric Industrial Co.,Ltd. Semiconductor device having a tapered gate electrode
US5705439A (en) * 1996-04-22 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd. Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS
US6297080B1 (en) * 1998-11-09 2001-10-02 Lg. Philips Lcd Co. Ltd. Method of crystallizing a silicon film and a method of manufacturing a liquid crystal display apparatus
JP2000195872A (ja) * 1998-12-28 2000-07-14 Fujitsu Quantum Device Kk 半導体装置及びその製造方法
US6326675B1 (en) * 1999-03-18 2001-12-04 Philips Semiconductor, Inc. Semiconductor device with transparent link area for silicide applications and fabrication thereof
US6187657B1 (en) * 1999-03-24 2001-02-13 Advanced Micro Devices, Inc. Dual material gate MOSFET technique
US6960510B2 (en) * 2002-07-01 2005-11-01 International Business Machines Corporation Method of making sub-lithographic features
US6773978B1 (en) 2002-07-23 2004-08-10 Advanced Micro Devices, Inc. Methods for improved metal gate fabrication
KR20080086686A (ko) * 2007-03-23 2008-09-26 주식회사 하이닉스반도체 반도체 소자의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232439A (en) * 1976-11-30 1980-11-11 Vlsi Technology Research Association Masking technique usable in manufacturing semiconductor devices
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof
JPS59155173A (ja) * 1983-02-24 1984-09-04 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JPS6070768A (ja) * 1983-09-27 1985-04-22 Toshiba Corp 電界効果トランジスタの製造方法
JPS60144980A (ja) * 1984-01-06 1985-07-31 Nec Corp 半導体装置
US4532698A (en) * 1984-06-22 1985-08-06 International Business Machines Corporation Method of making ultrashort FET using oblique angle metal deposition and ion implantation
JPH0715913B2 (ja) * 1985-02-23 1995-02-22 日本電信電話株式会社 電界効果トランジスタの製法
JPS61220376A (ja) * 1985-03-26 1986-09-30 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法
JPS61228674A (ja) * 1985-04-02 1986-10-11 Fujitsu Ltd 半導体装置及びその製造方法
JPS6286869A (ja) * 1985-10-14 1987-04-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6286870A (ja) * 1985-10-14 1987-04-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6292481A (ja) * 1985-10-18 1987-04-27 Nec Corp 半導体装置の製造方法
JPH0671009B2 (ja) * 1985-12-04 1994-09-07 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2632775A1 (fr) 1989-12-15
US4997779A (en) 1991-03-05
JPH022142A (ja) 1990-01-08

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