FR2638569B1 - Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson - Google Patents

Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson

Info

Publication number
FR2638569B1
FR2638569B1 FR898913548A FR8913548A FR2638569B1 FR 2638569 B1 FR2638569 B1 FR 2638569B1 FR 898913548 A FR898913548 A FR 898913548A FR 8913548 A FR8913548 A FR 8913548A FR 2638569 B1 FR2638569 B1 FR 2638569B1
Authority
FR
France
Prior art keywords
josephson
manufacturing
type transistor
effect type
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR898913548A
Other languages
English (en)
Other versions
FR2638569A1 (fr
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63268518A external-priority patent/JPH02114679A/ja
Priority claimed from JP63268519A external-priority patent/JPH02114680A/ja
Priority claimed from JP63268521A external-priority patent/JPH02114681A/ja
Priority claimed from JP63268527A external-priority patent/JPH02114682A/ja
Priority claimed from JP63272349A external-priority patent/JPH02119189A/ja
Priority claimed from JP63285071A external-priority patent/JPH02130969A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of FR2638569A1 publication Critical patent/FR2638569A1/fr
Application granted granted Critical
Publication of FR2638569B1 publication Critical patent/FR2638569B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device
    • Y10S505/874—Active solid-state device with josephson junction, e.g. squid
FR898913548A 1988-10-25 1989-10-17 Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson Expired - Fee Related FR2638569B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63268518A JPH02114679A (ja) 1988-10-25 1988-10-25 電界効果型ジョセフソン・トランジスタ
JP63268519A JPH02114680A (ja) 1988-10-25 1988-10-25 電界効果型ジョセフソン・トランジスタ
JP63268521A JPH02114681A (ja) 1988-10-25 1988-10-25 電界効果型ジョセフソン　トランジスタ
JP63268527A JPH02114682A (ja) 1988-10-25 1988-10-25 電界効果型ジョセフソン・トランジスタ
JP63272349A JPH02119189A (ja) 1988-10-28 1988-10-28 電界効果型ジョセフソン・トランジスタ
JP63285071A JPH02130969A (ja) 1988-11-11 1988-11-11 ジョセフソン接合の製造方法

Publications (2)

Publication Number Publication Date
FR2638569A1 FR2638569A1 (fr) 1990-05-04
FR2638569B1 true FR2638569B1 (fr) 1992-11-20

Family

ID=27554336

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898913548A Expired - Fee Related FR2638569B1 (fr) 1988-10-25 1989-10-17 Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson

Country Status (2)

Country Link
US (1) US5071832A (fr)
FR (1) FR2638569B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2538096B2 (ja) * 1989-05-12 1996-09-25 松下電器産業株式会社 超伝導素子
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
JP3123164B2 (ja) * 1991-01-11 2001-01-09 株式会社日立製作所 超電導デバイス
EP0508844B1 (fr) * 1991-03-11 1997-05-21 Sumitomo Electric Industries, Ltd. Couche mince supraconductrice ayant au moins une région isolée supraconductrice formée en matériau supraconducteur d'oxyde et méthode pour sa fabrication
JPH04284632A (ja) * 1991-03-14 1992-10-09 Fujitsu Ltd 超伝導体線路の形成方法
FR2674067B1 (fr) * 1991-03-15 1993-05-28 Thomson Csf Dispositif semiconducteur a effet josephson.
US5274249A (en) * 1991-12-20 1993-12-28 University Of Maryland Superconducting field effect devices with thin channel layer
DE69316092T2 (de) * 1992-06-24 1998-07-16 Sumitomo Electric Industries Verfahren zur Herstellung einer supraleitenden Einrichtung mit einem supraleitenden Kanal aus oxidisch supraleitendem Material
US7582490B2 (en) * 1999-06-22 2009-09-01 President And Fellows Of Harvard College Controlled fabrication of gaps in electrically conducting structures
US6825106B1 (en) * 2003-09-30 2004-11-30 Sharp Laboratories Of America, Inc. Method of depositing a conductive niobium monoxide film for MOSFET gates
WO2006077585A2 (fr) * 2005-01-18 2006-07-27 Shye Shapira Appareil et procede pour la commande d'effet tunnel dans une structure microelectronique

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010792A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 超伝導トランジスタ
JPS6068681A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 超伝導トランジスタ
JPS60147179A (ja) * 1984-01-11 1985-08-03 Hitachi Ltd 超電導多端子素子
DE3588114T2 (de) * 1984-04-19 1997-02-06 Hitachi Ltd Supraleitende Anordnung
EP0667645A1 (fr) * 1984-11-05 1995-08-16 Hitachi, Ltd. Dispositif supraconducteur
DE3477624D1 (en) * 1984-12-18 1989-05-11 Ibm Low temperature tunneling transistor
JPS61206278A (ja) * 1985-03-11 1986-09-12 Hitachi Ltd 超電導デバイス
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
JPS63302582A (ja) * 1987-06-02 1988-12-09 Seiko Epson Corp 電界効果型トンネルトランジスタ
JPH01133381A (ja) * 1987-11-18 1989-05-25 Matsushita Electric Ind Co Ltd 超電導トランジスタ
EP0325877B1 (fr) * 1987-12-26 1994-03-09 Sumitomo Electric Industries Limited Substrat semi-conducteur avec une couche mince supraconductrice

Also Published As

Publication number Publication date
US5071832A (en) 1991-12-10
FR2638569A1 (fr) 1990-05-04

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Legal Events

Date Code Title Description
ST Notification of lapse