FR2559958B1 - Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication - Google Patents

Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication

Info

Publication number
FR2559958B1
FR2559958B1 FR8502448A FR8502448A FR2559958B1 FR 2559958 B1 FR2559958 B1 FR 2559958B1 FR 8502448 A FR8502448 A FR 8502448A FR 8502448 A FR8502448 A FR 8502448A FR 2559958 B1 FR2559958 B1 FR 2559958B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
field
oxide semiconductor
effect metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8502448A
Other languages
English (en)
Other versions
FR2559958A1 (fr
Inventor
Lawrence Alan Goodman
Alvin Malcom Goodman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24329777&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2559958(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2559958A1 publication Critical patent/FR2559958A1/fr
Application granted granted Critical
Publication of FR2559958B1 publication Critical patent/FR2559958B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
FR8502448A 1984-02-22 1985-02-20 Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication Expired FR2559958B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/582,601 US4587713A (en) 1984-02-22 1984-02-22 Method for making vertical MOSFET with reduced bipolar effects

Publications (2)

Publication Number Publication Date
FR2559958A1 FR2559958A1 (fr) 1985-08-23
FR2559958B1 true FR2559958B1 (fr) 1988-08-05

Family

ID=24329777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8502448A Expired FR2559958B1 (fr) 1984-02-22 1985-02-20 Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication

Country Status (5)

Country Link
US (1) US4587713A (fr)
JP (1) JPH061838B2 (fr)
DE (1) DE3505393C2 (fr)
FR (1) FR2559958B1 (fr)
GB (1) GB2154794B (fr)

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EP0313000B1 (fr) * 1987-10-21 1998-05-06 Siemens Aktiengesellschaft Méthode de fabrication d'un transistor bipolaire à grille isolée
US5173435A (en) * 1987-11-11 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
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JPH01300569A (ja) * 1988-05-27 1989-12-05 Mitsubishi Electric Corp 半導体装置
US4898835A (en) * 1988-10-12 1990-02-06 Sgs-Thomson Microelectronics, Inc. Single mask totally self-aligned power MOSFET cell fabrication process
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US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
DE69029942T2 (de) * 1990-10-16 1997-08-28 Sgs Thomson Microelectronics Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
EP0661755A1 (fr) * 1993-12-28 1995-07-05 AT&T Corp. Dispositif semi-conducteur haute-tension avec une robustesse électrique améliorée et un espacement cellulaire réduit
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US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE4435458C2 (de) * 1994-10-04 1998-07-02 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
KR0143459B1 (ko) * 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터
KR100194661B1 (ko) * 1995-10-10 1999-07-01 윤종용 전력용 트랜지스터
JP3279151B2 (ja) * 1995-10-23 2002-04-30 トヨタ自動車株式会社 半導体装置及びその製造方法
KR0175276B1 (ko) * 1996-01-26 1999-02-01 김광호 전력반도체장치 및 그의 제조방법
KR100253075B1 (ko) * 1997-05-15 2000-04-15 윤종용 고내압 반도체 장치 및 그의 제조 방법
US6121089A (en) * 1997-10-17 2000-09-19 Intersil Corporation Methods of forming power semiconductor devices having merged split-well body regions therein
DE19840402C2 (de) * 1997-12-12 2003-07-31 Nat Semiconductor Corp Verfahren zum Herstellen einer Struktur eines DMOS-Leistungselementes und Struktur eines DMOS-Leistungselementes
US6239466B1 (en) * 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
EP1058303A1 (fr) 1999-05-31 2000-12-06 STMicroelectronics S.r.l. Fabrication d'une structure VDMOS ayant des effets parasites réduits
JP2001135817A (ja) * 1999-11-09 2001-05-18 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
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US6759730B2 (en) 2001-09-18 2004-07-06 Agere Systems Inc. Bipolar junction transistor compatible with vertical replacement gate transistor
US20030052365A1 (en) * 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US6686604B2 (en) 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6709904B2 (en) * 2001-09-28 2004-03-23 Agere Systems Inc. Vertical replacement-gate silicon-on-insulator transistor
US6773994B2 (en) 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
US20030151092A1 (en) * 2002-02-11 2003-08-14 Feng-Tso Chien Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same
DE102004038369B4 (de) * 2004-08-06 2018-04-05 Austriamicrosystems Ag Hochvolt-NMOS-Transistor und Herstellungsverfahren
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
EP2061084A1 (fr) * 2007-11-14 2009-05-20 ABB Technology AG Transistor bipolaire à grille isolée conduisant en inverse et méthode de fabrication correspondante
US9810358B2 (en) 2009-02-03 2017-11-07 Aqseptence Group, Inc. Male push lock pipe connection system
WO2012083590A1 (fr) 2010-12-20 2012-06-28 The Hong Kong University Of Science And Technology Structure semiconductrice de puissance à transistors à effet de champ comportant un matériau capteur de charges dans le diélectrique de la grille
JP6700648B2 (ja) * 2012-10-18 2020-05-27 富士電機株式会社 半導体装置の製造方法
JP6529221B2 (ja) * 2014-05-14 2019-06-12 キヤノン株式会社 光電変換装置及びその製造方法
JP6589263B2 (ja) * 2014-09-11 2019-10-16 富士電機株式会社 半導体装置

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Also Published As

Publication number Publication date
GB2154794A (en) 1985-09-11
US4587713A (en) 1986-05-13
FR2559958A1 (fr) 1985-08-23
DE3505393A1 (de) 1985-08-29
GB8504367D0 (en) 1985-03-20
GB2154794B (en) 1987-12-31
DE3505393C2 (de) 1995-06-22
JPH061838B2 (ja) 1994-01-05
JPS60202967A (ja) 1985-10-14

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