FR2559958B1 - Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication - Google Patents

Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication

Info

Publication number
FR2559958B1
FR2559958B1 FR8502448A FR8502448A FR2559958B1 FR 2559958 B1 FR2559958 B1 FR 2559958B1 FR 8502448 A FR8502448 A FR 8502448A FR 8502448 A FR8502448 A FR 8502448A FR 2559958 B1 FR2559958 B1 FR 2559958B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
field
oxide semiconductor
effect metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8502448A
Other languages
English (en)
Other versions
FR2559958A1 (fr
Inventor
Lawrence Alan Goodman
Alvin Malcom Goodman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24329777&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2559958(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2559958A1 publication Critical patent/FR2559958A1/fr
Application granted granted Critical
Publication of FR2559958B1 publication Critical patent/FR2559958B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
FR8502448A 1984-02-22 1985-02-20 Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication Expired FR2559958B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/582,601 US4587713A (en) 1984-02-22 1984-02-22 Method for making vertical MOSFET with reduced bipolar effects

Publications (2)

Publication Number Publication Date
FR2559958A1 FR2559958A1 (fr) 1985-08-23
FR2559958B1 true FR2559958B1 (fr) 1988-08-05

Family

ID=24329777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8502448A Expired FR2559958B1 (fr) 1984-02-22 1985-02-20 Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication

Country Status (5)

Country Link
US (1) US4587713A (fr)
JP (1) JPH061838B2 (fr)
DE (1) DE3505393C2 (fr)
FR (1) FR2559958B1 (fr)
GB (1) GB2154794B (fr)

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US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
EP0481153B1 (fr) * 1990-10-16 1997-02-12 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Méthode de fabrication de transistors MOS de puissance à courant vertical
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
EP0661755A1 (fr) * 1993-12-28 1995-07-05 AT&T Corp. Dispositif semi-conducteur haute-tension avec une robustesse électrique améliorée et un espacement cellulaire réduit
WO1995024055A1 (fr) * 1994-03-04 1995-09-08 Siemens Aktiengesellschaft Structure mis a base de carbure de silicium a resistance elevee au verrouillage
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE4435458C2 (de) * 1994-10-04 1998-07-02 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
KR0143459B1 (ko) * 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터
KR100194661B1 (ko) * 1995-10-10 1999-07-01 윤종용 전력용 트랜지스터
JP3279151B2 (ja) * 1995-10-23 2002-04-30 トヨタ自動車株式会社 半導体装置及びその製造方法
KR0175276B1 (ko) * 1996-01-26 1999-02-01 김광호 전력반도체장치 및 그의 제조방법
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US6239466B1 (en) 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
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JP2001135817A (ja) * 1999-11-09 2001-05-18 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
US6690040B2 (en) * 2001-09-10 2004-02-10 Agere Systems Inc. Vertical replacement-gate junction field-effect transistor
US20030052365A1 (en) * 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US6759730B2 (en) 2001-09-18 2004-07-06 Agere Systems Inc. Bipolar junction transistor compatible with vertical replacement gate transistor
US6686604B2 (en) * 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6709904B2 (en) * 2001-09-28 2004-03-23 Agere Systems Inc. Vertical replacement-gate silicon-on-insulator transistor
US6773994B2 (en) 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
US20030151092A1 (en) * 2002-02-11 2003-08-14 Feng-Tso Chien Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same
DE102004038369B4 (de) 2004-08-06 2018-04-05 Austriamicrosystems Ag Hochvolt-NMOS-Transistor und Herstellungsverfahren
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
EP2061084A1 (fr) * 2007-11-14 2009-05-20 ABB Technology AG Transistor bipolaire à grille isolée conduisant en inverse et méthode de fabrication correspondante
US9810358B2 (en) 2009-02-03 2017-11-07 Aqseptence Group, Inc. Male push lock pipe connection system
WO2012083590A1 (fr) 2010-12-20 2012-06-28 The Hong Kong University Of Science And Technology Structure semiconductrice de puissance à transistors à effet de champ comportant un matériau capteur de charges dans le diélectrique de la grille
JP6700648B2 (ja) * 2012-10-18 2020-05-27 富士電機株式会社 半導体装置の製造方法
JP6529221B2 (ja) * 2014-05-14 2019-06-12 キヤノン株式会社 光電変換装置及びその製造方法
JP6589263B2 (ja) * 2014-09-11 2019-10-16 富士電機株式会社 半導体装置
IT202300022362A1 (it) * 2023-10-25 2025-04-25 St Microelectronics Int Nv Transistore mosfet con struttura di body perfezionata per aumentare la robustezza e relativo processo di fabbricazione

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CA1216968A (fr) * 1983-09-06 1987-01-20 Victor A.K. Temple Dispositif a semiconducteur a grille isolee a court-circuit base-source ameliore et methode de fabrication de ce court-circuit
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
JPS60202967A (ja) 1985-10-14
GB2154794B (en) 1987-12-31
JPH061838B2 (ja) 1994-01-05
US4587713A (en) 1986-05-13
DE3505393C2 (de) 1995-06-22
GB8504367D0 (en) 1985-03-20
DE3505393A1 (de) 1985-08-29
GB2154794A (en) 1985-09-11
FR2559958A1 (fr) 1985-08-23

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