FR2633776B1 - Dispositif transistor a effet de champ et procede destine a sa production - Google Patents
Dispositif transistor a effet de champ et procede destine a sa productionInfo
- Publication number
- FR2633776B1 FR2633776B1 FR8908793A FR8908793A FR2633776B1 FR 2633776 B1 FR2633776 B1 FR 2633776B1 FR 8908793 A FR8908793 A FR 8908793A FR 8908793 A FR8908793 A FR 8908793A FR 2633776 B1 FR2633776 B1 FR 2633776B1
- Authority
- FR
- France
- Prior art keywords
- production
- field
- effect transistor
- transistor device
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63165752A JPH0215652A (ja) | 1988-07-01 | 1988-07-01 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2633776A1 FR2633776A1 (fr) | 1990-01-05 |
FR2633776B1 true FR2633776B1 (fr) | 1993-12-24 |
Family
ID=15818396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8908793A Expired - Fee Related FR2633776B1 (fr) | 1988-07-01 | 1989-06-30 | Dispositif transistor a effet de champ et procede destine a sa production |
Country Status (4)
Country | Link |
---|---|
US (2) | US5324981A (fr) |
JP (1) | JPH0215652A (fr) |
FR (1) | FR2633776B1 (fr) |
GB (1) | GB2221344B (fr) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2634300B2 (ja) * | 1990-05-24 | 1997-07-23 | 三菱電機株式会社 | 半導体装置 |
JP2836334B2 (ja) * | 1992-01-23 | 1998-12-14 | 三菱電機株式会社 | 高出力半導体装置の製造方法 |
JP2776457B2 (ja) * | 1992-12-29 | 1998-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイスのクラックストップ形成方法及び半導体デバイス |
JPH06268112A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JP2625368B2 (ja) * | 1993-12-16 | 1997-07-02 | 日本電気株式会社 | 半導体基板 |
JP3156896B2 (ja) | 1994-01-28 | 2001-04-16 | 富士通株式会社 | 半導体装置の製造方法およびかかる製造方法により製造された半導体装置 |
US5753529A (en) * | 1994-05-05 | 1998-05-19 | Siliconix Incorporated | Surface mount and flip chip technology for total integrated circuit isolation |
JP3374880B2 (ja) * | 1994-10-26 | 2003-02-10 | 三菱電機株式会社 | 半導体装置の製造方法、及び半導体装置 |
DE19516487C1 (de) * | 1995-05-05 | 1996-07-25 | Fraunhofer Ges Forschung | Verfahren zur vertikalen Integration mikroelektronischer Systeme |
US5691248A (en) * | 1995-07-26 | 1997-11-25 | International Business Machines Corporation | Methods for precise definition of integrated circuit chip edges |
US5734189A (en) * | 1996-12-09 | 1998-03-31 | Itt Industries, Inc. | Low parasitic source inductance field-effect transistor device having via connections disposed along an outer periphery thereof |
JP3184493B2 (ja) * | 1997-10-01 | 2001-07-09 | 松下電子工業株式会社 | 電子装置の製造方法 |
WO1999025019A1 (fr) * | 1997-11-11 | 1999-05-20 | Irvine Sensors Corporation | Procede d'amincissement de plaquettes en semi-conducteur a circuits et plaquettes ainsi produites |
US6570247B1 (en) | 1997-12-30 | 2003-05-27 | Intel Corporation | Integrated circuit device having an embedded heat slug |
US6081006A (en) * | 1998-08-13 | 2000-06-27 | Cisco Systems, Inc. | Reduced size field effect transistor |
JP2000173952A (ja) * | 1998-12-03 | 2000-06-23 | Fujitsu Quantum Device Kk | 半導体装置及びその製造方法 |
US7211877B1 (en) | 1999-09-13 | 2007-05-01 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
KR100462980B1 (ko) | 1999-09-13 | 2004-12-23 | 비쉐이 메저먼츠 그룹, 인코포레이티드 | 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정 |
JP4180827B2 (ja) | 2000-04-20 | 2008-11-12 | ディジラッド・コーポレーション | 半導体装置のエッジ電流の抑制方法 |
JP2001313350A (ja) * | 2000-04-28 | 2001-11-09 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法 |
DE60030963D1 (de) * | 2000-06-06 | 2006-11-09 | St Microelectronics Srl | Elektronischer Halbleiterbaustein mit Wärmeverteiler |
US6875640B1 (en) * | 2000-06-08 | 2005-04-05 | Micron Technology, Inc. | Stereolithographic methods for forming a protective layer on a semiconductor device substrate and substrates including protective layers so formed |
JP2002026270A (ja) * | 2000-07-10 | 2002-01-25 | Nec Corp | 半導体装置の製造方法 |
US6458611B1 (en) * | 2001-03-07 | 2002-10-01 | Intel Corporation | Integrated circuit device characterization |
JP3834589B2 (ja) * | 2001-06-27 | 2006-10-18 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2003051473A (ja) * | 2001-08-03 | 2003-02-21 | Disco Abrasive Syst Ltd | 半導体ウェーハの裏面研削方法 |
CN1279605C (zh) * | 2002-03-19 | 2006-10-11 | 精工爱普生株式会社 | 半导体装置及其制造方法、电路基板以及电子仪器 |
US6703710B1 (en) | 2002-08-15 | 2004-03-09 | National Semiconductor Corporation | Dual damascene metal trace with reduced RF impedance resulting from the skin effect |
US6864581B1 (en) * | 2002-08-15 | 2005-03-08 | National Semiconductor Corporation | Etched metal trace with reduced RF impendance resulting from the skin effect |
US6740956B1 (en) | 2002-08-15 | 2004-05-25 | National Semiconductor Corporation | Metal trace with reduced RF impedance resulting from the skin effect |
US6853079B1 (en) | 2002-08-15 | 2005-02-08 | National Semiconductor Corporation | Conductive trace with reduced RF impedance resulting from the skin effect |
US6900143B1 (en) * | 2003-09-09 | 2005-05-31 | Advanced Micro Devices, Inc. | Strained silicon MOSFETs having improved thermal dissipation |
JP4307284B2 (ja) * | 2004-02-17 | 2009-08-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6940183B1 (en) * | 2004-06-04 | 2005-09-06 | Lu-Chen Hwan | Compound filled in lead IC packaging product |
US7566634B2 (en) * | 2004-09-24 | 2009-07-28 | Interuniversitair Microelektronica Centrum (Imec) | Method for chip singulation |
EP1670055A1 (fr) * | 2004-12-09 | 2006-06-14 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Procédé pour séparer des puces |
CN100517645C (zh) * | 2005-01-24 | 2009-07-22 | 松下电器产业株式会社 | 半导体芯片的制造方法及半导体芯片 |
US7288821B2 (en) * | 2005-04-08 | 2007-10-30 | International Business Machines Corporation | Structure and method of three dimensional hybrid orientation technology |
JP4275095B2 (ja) * | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4275096B2 (ja) * | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4288252B2 (ja) * | 2005-04-19 | 2009-07-01 | パナソニック株式会社 | 半導体チップの製造方法 |
DE102006046789A1 (de) | 2006-10-02 | 2008-04-03 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zur Herstellung elektronischer Bauteile |
CN107782767B (zh) * | 2016-08-26 | 2022-01-07 | 深迪半导体(绍兴)有限公司 | 一种气体传感器加热盘及加工方法 |
CN113439241A (zh) * | 2019-02-19 | 2021-09-24 | 株式会社理光 | 光电转换元件、有机光电导体、图像形成方法、图像形成设备和有机el元件 |
Family Cites Families (37)
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GB633848A (en) * | 1946-01-09 | 1949-12-30 | Philips Nv | Improvements in or relating to methods of manufacturing blocking-layer cells |
NL216645A (fr) * | 1956-04-26 | |||
US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
US3383760A (en) * | 1965-08-09 | 1968-05-21 | Rca Corp | Method of making semiconductor devices |
US4180422A (en) * | 1969-02-03 | 1979-12-25 | Raytheon Company | Method of making semiconductor diodes |
US3938176A (en) * | 1973-09-24 | 1976-02-10 | Texas Instruments Incorporated | Process for fabricating dielectrically isolated semiconductor components of an integrated circuit |
US3895429A (en) * | 1974-05-09 | 1975-07-22 | Rca Corp | Method of making a semiconductor device |
US3897627A (en) * | 1974-06-28 | 1975-08-05 | Rca Corp | Method for manufacturing semiconductor devices |
FR2307374A1 (fr) * | 1975-04-11 | 1976-11-05 | Thomson Csf | Procede de fabrication de lames semi-conductrices tres minces, a faces paralleles, et diodes hyperfrequence fabriquees par ledit procede |
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
FR2318350A1 (fr) * | 1975-07-17 | 1977-02-11 | Lignes Telegraph Telephon | Perfectionnements aux dispositifs de tirage pour machine de cablerie |
DE2603747A1 (de) * | 1976-01-31 | 1977-08-04 | Licentia Gmbh | Integrierte schaltungsanordnung |
US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
US4237600A (en) * | 1978-11-16 | 1980-12-09 | Rca Corporation | Method for fabricating stacked semiconductor diodes for high power/low loss applications |
US4255212A (en) * | 1979-07-02 | 1981-03-10 | The Regents Of The University Of California | Method of fabricating photovoltaic cells |
US4384400A (en) * | 1979-12-06 | 1983-05-24 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating monolithically interconnected series-parallel avalanche diodes |
FR2484141A1 (fr) * | 1980-06-06 | 1981-12-11 | Thomson Csf | Element bipolaire a conduction non lineaire, et dispositif a commutation, de visualisation notamment, incorporant un tel element |
JPS5749252A (en) * | 1980-09-09 | 1982-03-23 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS57107039A (en) * | 1980-12-25 | 1982-07-03 | Nec Home Electronics Ltd | Manufacture of semiconductor |
JPS5994818A (ja) * | 1982-11-24 | 1984-05-31 | Toshiba Corp | 半導体装置の製造方法 |
FR2536908B1 (fr) * | 1982-11-30 | 1986-03-14 | Telecommunications Sa | Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant |
JPS59117171A (ja) * | 1982-12-23 | 1984-07-06 | Nec Corp | 高周波高出力電界効果トランジスタ |
GB2136203B (en) * | 1983-03-02 | 1986-10-15 | Standard Telephones Cables Ltd | Through-wafer integrated circuit connections |
US4507845A (en) * | 1983-09-12 | 1985-04-02 | Trw Inc. | Method of making field effect transistors with opposed source _and gate regions |
GB2150749B (en) * | 1983-12-03 | 1987-09-23 | Standard Telephones Cables Ltd | Integrated circuits |
US4537654A (en) * | 1983-12-09 | 1985-08-27 | Trw Inc. | Two-gate non-coplanar FET with self-aligned source |
JPS6177369A (ja) * | 1984-09-25 | 1986-04-19 | Toshiba Corp | 半導体装置の製造方法 |
US4620207A (en) * | 1984-12-19 | 1986-10-28 | Eaton Corporation | Edge channel FET |
GB2182200B (en) * | 1985-08-31 | 1989-04-26 | Plessey Co Plc | Mesa semiconductor device |
JP2568495B2 (ja) * | 1985-10-21 | 1997-01-08 | 三菱電機株式会社 | 半導体装置 |
JPS62122278A (ja) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | 高周波高出力fetの製造方法 |
JPS62122279A (ja) * | 1985-11-22 | 1987-06-03 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPS62211962A (ja) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | 高周波半導体装置の製造方法 |
FR2603739B1 (fr) * | 1986-09-05 | 1988-12-09 | Cimsa Sintra | Boitier de composant electronique muni de broches de connexion comportant un micro-boitier amovible |
JPS63155673A (ja) * | 1986-12-18 | 1988-06-28 | Nec Corp | 電界効果型半導体装置 |
JPH06209058A (ja) * | 1993-01-12 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法,並びにその実装方法 |
-
1988
- 1988-07-01 JP JP63165752A patent/JPH0215652A/ja active Pending
-
1989
- 1989-06-29 GB GB8914970A patent/GB2221344B/en not_active Expired - Fee Related
- 1989-06-30 FR FR8908793A patent/FR2633776B1/fr not_active Expired - Fee Related
-
1993
- 1993-04-14 US US08/046,920 patent/US5324981A/en not_active Expired - Fee Related
-
1994
- 1994-04-08 US US08/224,882 patent/US5434094A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5434094A (en) | 1995-07-18 |
US5324981A (en) | 1994-06-28 |
FR2633776A1 (fr) | 1990-01-05 |
GB8914970D0 (en) | 1989-08-23 |
JPH0215652A (ja) | 1990-01-19 |
GB2221344A (en) | 1990-01-31 |
GB2221344B (en) | 1992-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |