FR2345813A1 - Procede de realisation d'elements de memoire a transistor a effet de champ - Google Patents

Procede de realisation d'elements de memoire a transistor a effet de champ

Info

Publication number
FR2345813A1
FR2345813A1 FR7709067A FR7709067A FR2345813A1 FR 2345813 A1 FR2345813 A1 FR 2345813A1 FR 7709067 A FR7709067 A FR 7709067A FR 7709067 A FR7709067 A FR 7709067A FR 2345813 A1 FR2345813 A1 FR 2345813A1
Authority
FR
France
Prior art keywords
effect transistor
memory elements
transistor memory
making field
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7709067A
Other languages
English (en)
Other versions
FR2345813B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2345813A1 publication Critical patent/FR2345813A1/fr
Application granted granted Critical
Publication of FR2345813B1 publication Critical patent/FR2345813B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
FR7709067A 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ Granted FR2345813A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67118376A 1976-03-26 1976-03-26

Publications (2)

Publication Number Publication Date
FR2345813A1 true FR2345813A1 (fr) 1977-10-21
FR2345813B1 FR2345813B1 (fr) 1980-11-21

Family

ID=24693462

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709067A Granted FR2345813A1 (fr) 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ

Country Status (6)

Country Link
US (1) US4115914A (fr)
JP (1) JPS52144981A (fr)
DE (1) DE2711895C2 (fr)
FR (1) FR2345813A1 (fr)
GB (1) GB1575960A (fr)
NL (1) NL186984C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533740A1 (fr) * 1982-09-24 1984-03-30 Hitachi Ltd Memoire remanente

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NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
US4212100A (en) * 1977-09-23 1980-07-15 Mos Technology, Inc. Stable N-channel MOS structure
DE2845328C2 (de) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Speichertransistor
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
US4257056A (en) * 1979-06-27 1981-03-17 National Semiconductor Corporation Electrically erasable read only memory
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4253106A (en) * 1979-10-19 1981-02-24 Rca Corporation Gate injected floating gate memory device
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4268844A (en) * 1979-12-31 1981-05-19 The United States Of America As Represented By The Secretary Of The Navy Insulated gate field-effect transistors
JPS5931231B2 (ja) * 1980-01-31 1984-07-31 工業技術院長 浮遊ゲ−ト形不揮発性半導体メモリ
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US4361847A (en) * 1980-04-07 1982-11-30 Eliyahou Harari Non-volatile EPROM with enhanced drain overlap for increased efficiency
US4359698A (en) * 1980-07-09 1982-11-16 Ford Motor Company Reflecting type light modulator
DE3037744A1 (de) * 1980-10-06 1982-05-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik
DE3174858D1 (en) * 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
JPS57162370A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
DE3122382A1 (de) * 1981-06-05 1982-12-23 Ibm Deutschland Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur
JPS587876A (ja) * 1981-07-07 1983-01-17 Nec Corp 電界効果トランジスタおよびその製造方法
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
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US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
US4442447A (en) * 1982-03-09 1984-04-10 Rca Corporation Electrically alterable nonvolatile floating gate memory device
USRE34535E (en) * 1983-02-23 1994-02-08 Texas Instruments Incorporated Floating gate memory with improved dielectric
US4949154A (en) * 1983-02-23 1990-08-14 Texas Instruments, Incorporated Thin dielectrics over polysilicon
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
US5144393A (en) * 1989-04-04 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Structure for a PSD type field effect transistor
DE69033262T2 (de) 1989-04-13 2000-02-24 Sandisk Corp EEPROM-Karte mit Austauch von fehlerhaften Speicherzellen und Zwischenspeicher
JPH0388370A (ja) * 1989-08-31 1991-04-12 Toshiba Corp 半導体記憶装置の製造方法
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
JPH04257270A (ja) * 1991-02-08 1992-09-11 Fujitsu Ltd 半導体記憶装置
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
KR100192391B1 (ko) * 1994-03-04 1999-06-15 구본준 전하전송자 인젝션 트랜지스터
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JP3878681B2 (ja) 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
JPH10189920A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
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US6429109B1 (en) 2001-12-14 2002-08-06 Chartered Semiconductor Manufacturing Ltd Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
US6821873B2 (en) * 2002-01-10 2004-11-23 Texas Instruments Incorporated Anneal sequence for high-κ film property optimization
US20040152296A1 (en) * 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
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US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US7528015B2 (en) * 2005-06-28 2009-05-05 Freescale Semiconductor, Inc. Tunable antifuse element and method of manufacture
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NL7510943A (nl) * 1974-09-20 1976-03-23 Siemens Ag Geheugen-fet met geisoleerde, zwevende geheugen- gate.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533740A1 (fr) * 1982-09-24 1984-03-30 Hitachi Ltd Memoire remanente

Also Published As

Publication number Publication date
NL186984B (nl) 1990-11-16
US4115914A (en) 1978-09-26
NL7703224A (nl) 1977-09-28
DE2711895C2 (de) 1987-05-27
NL186984C (nl) 1991-04-16
DE2711895A1 (de) 1977-10-06
FR2345813B1 (fr) 1980-11-21
GB1575960A (en) 1980-10-01
JPS52144981A (en) 1977-12-02

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