FR2589648B1 - Circuit amplificateur a transistor a effet de champ - Google Patents
Circuit amplificateur a transistor a effet de champInfo
- Publication number
- FR2589648B1 FR2589648B1 FR868615423A FR8615423A FR2589648B1 FR 2589648 B1 FR2589648 B1 FR 2589648B1 FR 868615423 A FR868615423 A FR 868615423A FR 8615423 A FR8615423 A FR 8615423A FR 2589648 B1 FR2589648 B1 FR 2589648B1
- Authority
- FR
- France
- Prior art keywords
- field
- effect transistor
- amplifier circuit
- transistor amplifier
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60247784A JPS62107505A (ja) | 1985-11-05 | 1985-11-05 | 過大入力保護fet増幅回路 |
JP10112386U JPS637813U (fr) | 1986-07-01 | 1986-07-01 | |
JP10111986U JPS637812U (fr) | 1986-07-01 | 1986-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2589648A1 FR2589648A1 (fr) | 1987-05-07 |
FR2589648B1 true FR2589648B1 (fr) | 1991-01-11 |
Family
ID=27309395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR868615423A Expired - Fee Related FR2589648B1 (fr) | 1985-11-05 | 1986-11-05 | Circuit amplificateur a transistor a effet de champ |
Country Status (2)
Country | Link |
---|---|
US (1) | US4751473A (fr) |
FR (1) | FR2589648B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4737733A (en) * | 1986-10-29 | 1988-04-12 | Rca Corporation | Overdrive control of FET power amplifier |
FR2744860B1 (fr) * | 1996-02-08 | 1998-04-30 | Sgs Thomson Microelectronics | Amplificateur de puissance a limitation de tension surelevee |
JP2009232368A (ja) * | 2008-03-25 | 2009-10-08 | Fujitsu Ltd | 増幅装置及び増幅器故障検出方法 |
DE102009057544A1 (de) * | 2009-12-09 | 2011-06-16 | Eads Deutschland Gmbh | Begrenzerschaltung |
US8487705B2 (en) | 2010-05-26 | 2013-07-16 | Triquint Semiconductor, Inc. | Protection circuit for radio frequency power amplifier |
US8164389B2 (en) * | 2010-05-26 | 2012-04-24 | Triquint Semiconductor, Inc. | Overdrive protection circuit |
US8538368B1 (en) | 2011-11-14 | 2013-09-17 | Triquint Semiconductor, Inc. | Dynamic power limiter circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5132511B2 (fr) * | 1972-01-31 | 1976-09-13 | ||
US4420724A (en) * | 1982-05-17 | 1983-12-13 | Bell Telephone Laboratories, Incorporated | FET Amplifier with wide dynamic range |
JPS6143004A (ja) * | 1984-08-03 | 1986-03-01 | Fujitsu Ltd | 光受信回路 |
-
1986
- 1986-10-29 US US06/924,631 patent/US4751473A/en not_active Expired - Fee Related
- 1986-11-05 FR FR868615423A patent/FR2589648B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4751473A (en) | 1988-06-14 |
FR2589648A1 (fr) | 1987-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK11086D0 (da) | Elektronisk hoereapparat | |
FR2576711B1 (fr) | Transistor a effet de champ a heterojonction | |
EP0228516A3 (en) | Modulation-doped field-effect transistor | |
KR860009491A (ko) | 반도체 메모리 장치 | |
DE3662628D1 (de) | Narrow channel width fet | |
EP0239019A3 (en) | Field-effect transistor devices | |
DE3689433D1 (de) | Feldeffekttransistor. | |
KR860007755A (ko) | 반도체 장치 | |
FR2520170B1 (fr) | Oscillateur a transistor a effet de champ | |
DK310485A (da) | Elektronisk kontaktanordning | |
DE3685598D1 (de) | Kompaktes batteriegespeistes elektronisches geraet. | |
KR860007744A (ko) | 반도체 메모리장치 | |
KR880003602A (ko) | 증폭기 장치 | |
EP0228215A3 (en) | Field-effect transistor amplifier circuits | |
FR2589648B1 (fr) | Circuit amplificateur a transistor a effet de champ | |
DE3677141D1 (de) | Feldeffekttransistoranordnung. | |
FR2507409B1 (fr) | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ | |
FR2626407B1 (fr) | Transistor a effet de champ a heterojonction | |
DE3688318D1 (de) | Feldeffekttransistor. | |
DK435786A (da) | Elektronisk kontrolanordning | |
DE3676531D1 (de) | Elektronisches geraet. | |
FR2582152B1 (fr) | Dispositif a semiconducteur de type transistor a effet de champ | |
DE3686087D1 (de) | Feldeffekttransistor. | |
DE3686906D1 (de) | Feldeffekttransistor. | |
GB8606388D0 (en) | Junction field-effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |