FR2507409B1 - Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ - Google Patents
Circuit hyperfrequence, notamment amplificateur a transistor a effet de champInfo
- Publication number
- FR2507409B1 FR2507409B1 FR8110992A FR8110992A FR2507409B1 FR 2507409 B1 FR2507409 B1 FR 2507409B1 FR 8110992 A FR8110992 A FR 8110992A FR 8110992 A FR8110992 A FR 8110992A FR 2507409 B1 FR2507409 B1 FR 2507409B1
- Authority
- FR
- France
- Prior art keywords
- field
- effect transistor
- microwave circuit
- transistor amplifier
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8110992A FR2507409B1 (fr) | 1981-06-03 | 1981-06-03 | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8110992A FR2507409B1 (fr) | 1981-06-03 | 1981-06-03 | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2507409A1 FR2507409A1 (fr) | 1982-12-10 |
FR2507409B1 true FR2507409B1 (fr) | 1985-09-13 |
Family
ID=9259149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8110992A Expired FR2507409B1 (fr) | 1981-06-03 | 1981-06-03 | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2507409B1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2554275B1 (fr) * | 1983-10-26 | 1986-09-05 | Radiotechnique Compelec | Dispositif de connexion pour un semi-conducteur de puissance |
US4626805A (en) * | 1985-04-26 | 1986-12-02 | Tektronix, Inc. | Surface mountable microwave IC package |
FR2588696B1 (fr) * | 1985-10-16 | 1988-10-07 | Thomson Csf | Circuit hybride et procede de fabrication d'un tel circuit |
FR2620275A1 (fr) * | 1987-09-04 | 1989-03-10 | Thomson Hybrides Microondes | Boitier pour le montage en surface d'un composant fonctionnant en hyperfrequences |
FR2629271B1 (fr) * | 1988-03-25 | 1991-03-29 | Thomson Hybrides Microondes | Dispositif d'interconnexion et de protection d'une pastille nue de composant hyperfrequence |
IT1226224B (it) * | 1988-07-07 | 1990-12-27 | Telettra Lab Telefon | Circuiti ibridi a film con componenti attivi nudi e processo per il loro assemblaggio ed ermetizzazione. |
JPH10501102A (ja) * | 1995-03-02 | 1998-01-27 | サーキット コンポーネンツ インコーポレーテッド | Bga i/o rfポートフォーマットとセラミックス基板技術とを使用した90ghzまでの周波数領域のマイクロ波回路用の低コスト高性能パッケージ |
US6031188A (en) * | 1998-04-30 | 2000-02-29 | Lockheed Martin Corp. | Multi-circuit RF connections using molded and compliant RF coaxial interconnects |
US5945897A (en) * | 1998-04-30 | 1999-08-31 | Lockheed Martin Corporation | Compliant RF coaxial interconnect |
US6081988A (en) * | 1998-04-30 | 2000-07-04 | Lockheed Martin Corp. | Fabrication of a circuit module with a coaxial transmission line |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1213726A (en) * | 1968-01-26 | 1970-11-25 | Ferranti Ltd | Improvements relating to electrical circuit assemblies |
US4183041A (en) * | 1978-06-26 | 1980-01-08 | Rca Corporation | Self biasing of a field effect transistor mounted in a flip-chip carrier |
IT8048031A0 (it) * | 1979-04-09 | 1980-02-28 | Raytheon Co | Perfezionamento nei dispositivi a semiconduttore ad effetto di campo |
-
1981
- 1981-06-03 FR FR8110992A patent/FR2507409B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2507409A1 (fr) | 1982-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3276723D1 (en) | Offset-gate chemical-sensitive field-effect transistors (og-chemfets) | |
GB2073490B (en) | Complementary field-effect transistor integrated circuit device | |
EP0048758A4 (fr) | Configuration de circuit de transistor a effet de champ. | |
JPS5368178A (en) | Fet transistor | |
JPS52113685A (en) | Fet transistor having very short channel length | |
IL51471A (en) | Field effect transistor for microwave fequencies | |
BE854267A (fr) | Transistor a effet de champ a canal superficiel | |
JPS5324787A (en) | Fet transistor | |
DE3260514D1 (en) | Planar field-effect transistor having elektrodes comprising metallised holes, and process for manufacturing the transistor | |
FR2576711B1 (fr) | Transistor a effet de champ a heterojonction | |
FR2520170B1 (fr) | Oscillateur a transistor a effet de champ | |
DE3587592D1 (de) | Halbleiterspeicheranordnung mit Leseverstärkern. | |
FR2507409B1 (fr) | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ | |
DK310485A (da) | Elektronisk kontaktanordning | |
DE3483576D1 (de) | Tor-schaltungsanordnung. | |
NO156548C (no) | Elektrisk kontaktanordning. | |
NO158559C (no) | Innstikkskontaktanordning. | |
DE3673509D1 (de) | Feldeffekttransistorverstaerkerschaltungen. | |
FR2589648B1 (fr) | Circuit amplificateur a transistor a effet de champ | |
DE3278188D1 (en) | Transistor circuit including biasing circuit | |
DE3873564D1 (de) | Rauscharme mikrowellen-verstaerkerschaltung. | |
DK492383D0 (da) | Elektronisk kontaktanordning | |
JPS57133665A (en) | Insulated gate field effect transistor circuit | |
JPS56147506A (en) | Field effect transistor circuit | |
FR2652461B1 (fr) | Attenuateur a transistor a effet de champ bigrille. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
CD | Change of name or company name | ||
ST | Notification of lapse |