FR2576711B1 - Transistor a effet de champ a heterojonction - Google Patents

Transistor a effet de champ a heterojonction

Info

Publication number
FR2576711B1
FR2576711B1 FR868601318A FR8601318A FR2576711B1 FR 2576711 B1 FR2576711 B1 FR 2576711B1 FR 868601318 A FR868601318 A FR 868601318A FR 8601318 A FR8601318 A FR 8601318A FR 2576711 B1 FR2576711 B1 FR 2576711B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
heterojunction field
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR868601318A
Other languages
English (en)
Other versions
FR2576711A1 (fr
Inventor
Hidemi Takakuwa
Yoji Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2576711A1 publication Critical patent/FR2576711A1/fr
Application granted granted Critical
Publication of FR2576711B1 publication Critical patent/FR2576711B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR868601318A 1985-01-30 1986-01-30 Transistor a effet de champ a heterojonction Expired FR2576711B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60016042A JPS61174776A (ja) 1985-01-30 1985-01-30 ヘテロ接合電界効果トランジスタ

Publications (2)

Publication Number Publication Date
FR2576711A1 FR2576711A1 (fr) 1986-08-01
FR2576711B1 true FR2576711B1 (fr) 1989-02-03

Family

ID=11905515

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868601318A Expired FR2576711B1 (fr) 1985-01-30 1986-01-30 Transistor a effet de champ a heterojonction

Country Status (8)

Country Link
US (1) US4748484A (fr)
JP (1) JPS61174776A (fr)
KR (1) KR940008230B1 (fr)
CA (1) CA1253632A (fr)
DE (1) DE3602652C2 (fr)
FR (1) FR2576711B1 (fr)
GB (1) GB2171250B (fr)
NL (1) NL8600198A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0783108B2 (ja) * 1986-07-25 1995-09-06 株式会社日立製作所 半導体装置
JPS63102374A (ja) * 1986-09-29 1988-05-07 シーメンス、アクチエンゲゼルシヤフト 電界効果トランジスタ
DE3639433A1 (de) * 1986-11-18 1988-05-26 Licentia Gmbh Halbleiteranordnung
US4882608A (en) * 1987-02-09 1989-11-21 International Business Machines Corporation Multilayer semiconductor device having multiple paths of current flow
US4812886A (en) * 1987-02-09 1989-03-14 International Business Machines Corporation Multilayer contact apparatus and method
FR2611305B1 (fr) * 1987-02-20 1990-04-27 Labo Electronique Physique Circuit comportant des lignes conductrices pour le transfert de signaux rapides
US4855797A (en) * 1987-07-06 1989-08-08 Siemens Corporate Research And Support, Inc. Modulation doped high electron mobility transistor with n-i-p-i structure
FR2619250B1 (fr) * 1987-08-05 1990-05-11 Thomson Hybrides Microondes Transistor hyperfrequence a double heterojonction
US4885623A (en) * 1987-10-30 1989-12-05 Holm Kennedy James W Distributed channel-bipolar device
US4994868A (en) * 1988-12-06 1991-02-19 Itt Corporation Heterojunction confined channel FET
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US4962410A (en) * 1989-08-04 1990-10-09 Arizona Board Of Regents QUADFET-A novel field effect transistor
US5055890A (en) * 1990-01-25 1991-10-08 The United States Of America As Represented By The United States Department Of Energy Nonvolatile semiconductor memory having three dimension charge confinement
JP2679396B2 (ja) * 1990-10-25 1997-11-19 日本電気株式会社 電界効果トランジスタ
JP2608630B2 (ja) * 1990-10-31 1997-05-07 三菱電機株式会社 ヘテロ接合電界効果トランジスタ
US5116774A (en) * 1991-03-22 1992-05-26 Motorola, Inc. Heterojunction method and structure
US5406094A (en) * 1991-10-14 1995-04-11 Fujitsu Limited Quantum interference effect semiconductor device and method of producing the same
GB9126480D0 (en) * 1991-12-13 1992-02-12 Toshiba Cambridge Res Center Velocity modulation transistor
JPH0817231B2 (ja) * 1992-01-29 1996-02-21 東京工業大学長 組織ドープ構造半導体装置
US7370076B2 (en) * 1999-10-18 2008-05-06 4Yoursoul.Com Method and apparatus for creation, personalization, and fulfillment of greeting cards with gift cards
US6965912B2 (en) * 1999-10-18 2005-11-15 4Yoursoul.Com Method and apparatus for distribution of greeting cards with electronic commerce transaction
US20140090684A1 (en) * 2012-09-24 2014-04-03 Joshua R. Smith Heterojunction electrode with two-dimensional electron gas and surface treatment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite
DE3171953D1 (en) * 1980-12-29 1985-09-26 Fujitsu Ltd High electron mobility single heterojunction semiconductor devices and methods of production of such devices
JPS58178572A (ja) * 1982-04-14 1983-10-19 Hiroyuki Sakaki 移動度変調形電界効果トランジスタ
JPS59184573A (ja) * 1983-04-05 1984-10-19 Nec Corp 電界効果トランジスタ
JPH0810763B2 (ja) * 1983-12-28 1996-01-31 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
CA1253632A (fr) 1989-05-02
KR860006138A (ko) 1986-08-18
US4748484A (en) 1988-05-31
GB2171250B (en) 1988-07-13
KR940008230B1 (ko) 1994-09-08
DE3602652A1 (de) 1986-09-11
FR2576711A1 (fr) 1986-08-01
NL8600198A (nl) 1986-08-18
JPS61174776A (ja) 1986-08-06
DE3602652C2 (de) 1995-10-19
GB8602248D0 (en) 1986-03-05
GB2171250A (en) 1986-08-20

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Legal Events

Date Code Title Description
ST Notification of lapse