FR2515429B1 - Transistor a effet de champ de puissance - Google Patents

Transistor a effet de champ de puissance

Info

Publication number
FR2515429B1
FR2515429B1 FR8217784A FR8217784A FR2515429B1 FR 2515429 B1 FR2515429 B1 FR 2515429B1 FR 8217784 A FR8217784 A FR 8217784A FR 8217784 A FR8217784 A FR 8217784A FR 2515429 B1 FR2515429 B1 FR 2515429B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
power field
power
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8217784A
Other languages
English (en)
Other versions
FR2515429A1 (fr
Inventor
Nathan Zommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of FR2515429A1 publication Critical patent/FR2515429A1/fr
Application granted granted Critical
Publication of FR2515429B1 publication Critical patent/FR2515429B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8217784A 1981-10-26 1982-10-25 Transistor a effet de champ de puissance Expired FR2515429B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31480081A 1981-10-26 1981-10-26

Publications (2)

Publication Number Publication Date
FR2515429A1 FR2515429A1 (fr) 1983-04-29
FR2515429B1 true FR2515429B1 (fr) 1986-09-26

Family

ID=23221492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8217784A Expired FR2515429B1 (fr) 1981-10-26 1982-10-25 Transistor a effet de champ de puissance

Country Status (4)

Country Link
JP (1) JPS5882574A (fr)
DE (1) DE3239204A1 (fr)
FR (1) FR2515429B1 (fr)
GB (1) GB2108758B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833513A (en) * 1985-01-20 1989-05-23 Tdk Corporation MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width
US5317184A (en) * 1992-11-09 1994-05-31 Harris Corporation Device and method for improving current carrying capability in a semiconductor device
EP0823735A1 (fr) * 1996-08-05 1998-02-11 Sgs-Thomson Microelectronics S.A. Dispositif de puissance en technologie MOS
JP2006339516A (ja) 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
CN110676317B (zh) * 2019-09-30 2022-10-11 福建省福联集成电路有限公司 一种晶体管管芯结构及制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Also Published As

Publication number Publication date
GB2108758A (en) 1983-05-18
DE3239204A1 (de) 1983-05-19
JPS5882574A (ja) 1983-05-18
FR2515429A1 (fr) 1983-04-29
GB2108758B (en) 1985-08-21
DE3239204C2 (fr) 1987-07-23

Similar Documents

Publication Publication Date Title
FR2576711B1 (fr) Transistor a effet de champ a heterojonction
FR2522760B1 (fr) Mecanisme de transmission de puissance a vis globique
FR2520170B1 (fr) Oscillateur a transistor a effet de champ
FR2477777B1 (fr) Transistor bipolaire de puissance
FR2556905B1 (fr) Circuit de commande pour transistor a effet de champ de puissance
EP0155707A3 (en) Power schwitchgear device
AR229678A1 (es) Aparato convertidor de potencia
DE3278058D1 (en) Power semiconductor device
FR2621739B1 (fr) Transistor a effet de champ a grille schottky
DE3175383D1 (en) Integrated power transistor
GB8325889D0 (en) Variable power projecting device
FR2515429B1 (fr) Transistor a effet de champ de puissance
ES541197A0 (es) Un dispositivo de direccion de potencia
FR2526587B1 (fr) Dispositif a transistor a effet de champ a metal oxyde-silicium de puissance, bidirectionnel
MX152005A (es) Modulo mejorado de dispositivo de potencia
DK153808C (da) Stroemningsfordeler
FR2589648B1 (fr) Circuit amplificateur a transistor a effet de champ
ES551734A0 (es) Un dispositivo fotovoltaico mejorado
DK473082A (da) Effektstyringsapparat
FR2532607B1 (fr) Dispositif de transmission de puissance de velomoteur
FR2458147B1 (fr) Transistor a effet de champ a jonction
JPS5752170A (en) Power transistor
RO89619A (fr) Installation d'alimentation avec sachets
FR2543365B1 (fr) Transistor a effet de champ
JPS56129347A (en) Power diode

Legal Events

Date Code Title Description
ST Notification of lapse
RC Opposition against decision of lapse
DA Annulment of decision of lapse
ST Notification of lapse