FR2526587B1 - Dispositif a transistor a effet de champ a metal oxyde-silicium de puissance, bidirectionnel - Google Patents

Dispositif a transistor a effet de champ a metal oxyde-silicium de puissance, bidirectionnel

Info

Publication number
FR2526587B1
FR2526587B1 FR8307799A FR8307799A FR2526587B1 FR 2526587 B1 FR2526587 B1 FR 2526587B1 FR 8307799 A FR8307799 A FR 8307799A FR 8307799 A FR8307799 A FR 8307799A FR 2526587 B1 FR2526587 B1 FR 2526587B1
Authority
FR
France
Prior art keywords
oxide
transistor device
bidirectional power
silicon metal
metal field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8307799A
Other languages
English (en)
Other versions
FR2526587A1 (fr
Inventor
Michael Stuart Adler
Peter Vance Gray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2526587A1 publication Critical patent/FR2526587A1/fr
Application granted granted Critical
Publication of FR2526587B1 publication Critical patent/FR2526587B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8307799A 1982-05-10 1983-05-10 Dispositif a transistor a effet de champ a metal oxyde-silicium de puissance, bidirectionnel Expired FR2526587B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37605882A 1982-05-10 1982-05-10

Publications (2)

Publication Number Publication Date
FR2526587A1 FR2526587A1 (fr) 1983-11-10
FR2526587B1 true FR2526587B1 (fr) 1987-02-27

Family

ID=23483527

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8307799A Expired FR2526587B1 (fr) 1982-05-10 1983-05-10 Dispositif a transistor a effet de champ a metal oxyde-silicium de puissance, bidirectionnel

Country Status (2)

Country Link
JP (1) JPH0612823B2 (fr)
FR (1) FR2526587B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205637A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à piégeage de charges
EP0164094A3 (fr) * 1984-06-08 1987-02-04 Eaton Corporation Transistor bidirectionnel à effet de champ de puissance et à grille isolée
JPH02100366A (ja) * 1988-10-07 1990-04-12 Fuji Electric Co Ltd 絶縁ゲート型トランジスタ
JP2526476B2 (ja) * 1993-02-22 1996-08-21 日本電気株式会社 半導体装置の製造方法
DE19816448C1 (de) * 1998-04-14 1999-09-30 Siemens Ag Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung
DE19958694A1 (de) * 1999-12-06 2001-06-13 Infineon Technologies Ag Steuerbares Halbleiterschaltelement
FR2940525B1 (fr) * 2008-12-18 2011-04-08 Commissariat Energie Atomique Dispositif semiconducteur
JP7178950B2 (ja) 2019-04-18 2022-11-28 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
JPS5662368A (en) * 1979-10-26 1981-05-28 Toshiba Corp Manufacturing of accommodation mos integrated circuit
JPS6211017Y2 (fr) * 1981-01-09 1987-03-16
DE3131914A1 (de) * 1981-08-12 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Leistungs-mos-feldeffekttransistor und verfahren zu seiner herstellung

Also Published As

Publication number Publication date
FR2526587A1 (fr) 1983-11-10
JPS58218173A (ja) 1983-12-19
JPH0612823B2 (ja) 1994-02-16

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