FR2662544B1 - Transistor a effet de champ a heterojonction. - Google Patents

Transistor a effet de champ a heterojonction.

Info

Publication number
FR2662544B1
FR2662544B1 FR9006430A FR9006430A FR2662544B1 FR 2662544 B1 FR2662544 B1 FR 2662544B1 FR 9006430 A FR9006430 A FR 9006430A FR 9006430 A FR9006430 A FR 9006430A FR 2662544 B1 FR2662544 B1 FR 2662544B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
heterojunction field
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9006430A
Other languages
English (en)
Other versions
FR2662544A1 (fr
Inventor
Nuyen Trong Linh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Picogiga SA
Original Assignee
Picogiga SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picogiga SA filed Critical Picogiga SA
Priority to FR9006430A priority Critical patent/FR2662544B1/fr
Publication of FR2662544A1 publication Critical patent/FR2662544A1/fr
Application granted granted Critical
Publication of FR2662544B1 publication Critical patent/FR2662544B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9006430A 1990-05-23 1990-05-23 Transistor a effet de champ a heterojonction. Expired - Fee Related FR2662544B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9006430A FR2662544B1 (fr) 1990-05-23 1990-05-23 Transistor a effet de champ a heterojonction.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9006430A FR2662544B1 (fr) 1990-05-23 1990-05-23 Transistor a effet de champ a heterojonction.

Publications (2)

Publication Number Publication Date
FR2662544A1 FR2662544A1 (fr) 1991-11-29
FR2662544B1 true FR2662544B1 (fr) 1992-08-14

Family

ID=9396878

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9006430A Expired - Fee Related FR2662544B1 (fr) 1990-05-23 1990-05-23 Transistor a effet de champ a heterojonction.

Country Status (1)

Country Link
FR (1) FR2662544B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101095233A (zh) * 2004-12-30 2007-12-26 皇家飞利浦电子股份有限公司 增强－耗尽型半导体结构及其制造方法

Also Published As

Publication number Publication date
FR2662544A1 (fr) 1991-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse