FR2585371B1 - Procede et dispositif de revetement de micro-depressions - Google Patents
Procede et dispositif de revetement de micro-depressionsInfo
- Publication number
- FR2585371B1 FR2585371B1 FR8605533A FR8605533A FR2585371B1 FR 2585371 B1 FR2585371 B1 FR 2585371B1 FR 8605533 A FR8605533 A FR 8605533A FR 8605533 A FR8605533 A FR 8605533A FR 2585371 B1 FR2585371 B1 FR 2585371B1
- Authority
- FR
- France
- Prior art keywords
- depressions
- coating micro
- micro
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH3256/85A CH665428A5 (de) | 1985-07-26 | 1985-07-26 | Verfahren zur beschichtung von mikrovertiefungen. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2585371A1 FR2585371A1 (fr) | 1987-01-30 |
FR2585371B1 true FR2585371B1 (fr) | 1990-06-15 |
Family
ID=4252039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8605533A Expired - Fee Related FR2585371B1 (fr) | 1985-07-26 | 1986-04-17 | Procede et dispositif de revetement de micro-depressions |
Country Status (6)
Country | Link |
---|---|
US (1) | US4915806A (fr) |
JP (1) | JPS6226822A (fr) |
CH (1) | CH665428A5 (fr) |
DE (1) | DE3541911C2 (fr) |
FR (1) | FR2585371B1 (fr) |
GB (1) | GB2178060B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5246885A (en) * | 1989-12-13 | 1993-09-21 | International Business Machines Corporation | Deposition method for high aspect ratio features using photoablation |
EP0435801A3 (en) * | 1989-12-13 | 1992-11-19 | International Business Machines Corporation | Deposition method for high aspect ratio features |
US5302266A (en) * | 1992-03-20 | 1994-04-12 | International Business Machines Corporation | Method and apparatus for filing high aspect patterns with metal |
JP3169151B2 (ja) * | 1992-10-26 | 2001-05-21 | 三菱電機株式会社 | 薄膜形成装置 |
GB9317170D0 (en) * | 1993-08-18 | 1993-10-06 | Applied Vision Ltd | Improvements in physical vapour deposition apparatus |
JPH07268622A (ja) * | 1994-03-01 | 1995-10-17 | Applied Sci & Technol Inc | マイクロ波プラズマ付着源 |
US6287977B1 (en) * | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
JP2002359247A (ja) * | 2000-07-10 | 2002-12-13 | Canon Inc | 半導体部材、半導体装置およびそれらの製造方法 |
JP4302933B2 (ja) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | イオンビームによる穴埋め方法及びイオンビーム装置 |
US20070257366A1 (en) * | 2006-05-03 | 2007-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier layer for semiconductor interconnect structure |
CN101489356B (zh) * | 2008-01-16 | 2011-03-30 | 富葵精密组件(深圳)有限公司 | 电路板及其制作方法 |
TW201408803A (zh) * | 2012-06-18 | 2014-03-01 | Oc Oerlikon Balzers Ag | 用於方向性材料沉積的pvd設備、方法及工件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2940873A (en) * | 1957-07-18 | 1960-06-14 | Itt | Method of increasing the thickness of fine mesh metal screens |
US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
GB1518282A (en) * | 1974-07-31 | 1978-07-19 | Atomic Energy Authority Uk | Ion beam separators |
DE2644208C3 (de) * | 1976-09-30 | 1981-04-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage |
US4109061A (en) * | 1977-12-08 | 1978-08-22 | United Technologies Corporation | Method for altering the composition and structure of aluminum bearing overlay alloy coatings during deposition from metallic vapor |
US4336118A (en) * | 1980-03-21 | 1982-06-22 | Battelle Memorial Institute | Methods for making deposited films with improved microstructures |
JPS56156767A (en) * | 1980-05-02 | 1981-12-03 | Sumitomo Electric Ind Ltd | Highly hard substance covering material |
DE3116040C2 (de) * | 1981-04-22 | 1983-04-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Bioverträgliche Kohlenstoffschichten zum Beschichten von flexiblen Materialien u. Verfahren zum Aufbringen der Schichten |
GB2098793A (en) * | 1981-05-18 | 1982-11-24 | Varian Associates | Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target |
US4385975A (en) * | 1981-12-30 | 1983-05-31 | International Business Machines Corp. | Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate |
US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
US4601922A (en) * | 1983-09-21 | 1986-07-22 | Konishiroku Photo Industry Co., Ltd. | Method of forming a layer of thin film on a substrate having a multiplicity of mesh-like holes |
-
1985
- 1985-07-26 CH CH3256/85A patent/CH665428A5/de not_active IP Right Cessation
- 1985-11-27 DE DE3541911A patent/DE3541911C2/de not_active Expired - Lifetime
-
1986
- 1986-01-24 JP JP61013615A patent/JPS6226822A/ja active Pending
- 1986-03-21 GB GB8607051A patent/GB2178060B/en not_active Expired
- 1986-04-17 FR FR8605533A patent/FR2585371B1/fr not_active Expired - Fee Related
- 1986-07-22 US US06/888,881 patent/US4915806A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8607051D0 (en) | 1986-04-30 |
FR2585371A1 (fr) | 1987-01-30 |
DE3541911C2 (de) | 1994-08-04 |
GB2178060A (en) | 1987-02-04 |
CH665428A5 (de) | 1988-05-13 |
JPS6226822A (ja) | 1987-02-04 |
GB2178060B (en) | 1989-12-13 |
US4915806A (en) | 1990-04-10 |
DE3541911A1 (de) | 1987-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20051230 |