FR2544916B1 - Procede de fabrication de transistors a effet de champ mos - Google Patents

Procede de fabrication de transistors a effet de champ mos

Info

Publication number
FR2544916B1
FR2544916B1 FR8404759A FR8404759A FR2544916B1 FR 2544916 B1 FR2544916 B1 FR 2544916B1 FR 8404759 A FR8404759 A FR 8404759A FR 8404759 A FR8404759 A FR 8404759A FR 2544916 B1 FR2544916 B1 FR 2544916B1
Authority
FR
France
Prior art keywords
field effect
effect transistors
mos field
manufacturing mos
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8404759A
Other languages
English (en)
Other versions
FR2544916A1 (fr
Inventor
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2544916A1 publication Critical patent/FR2544916A1/fr
Application granted granted Critical
Publication of FR2544916B1 publication Critical patent/FR2544916B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
FR8404759A 1983-04-20 1984-03-27 Procede de fabrication de transistors a effet de champ mos Expired FR2544916B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58071609A JPS59195871A (ja) 1983-04-20 1983-04-20 Ｍｏｓ電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
FR2544916A1 FR2544916A1 (fr) 1984-10-26
FR2544916B1 true FR2544916B1 (fr) 1987-05-07

Family

ID=13465557

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8404759A Expired FR2544916B1 (fr) 1983-04-20 1984-03-27 Procede de fabrication de transistors a effet de champ mos

Country Status (3)

Country Link
US (1) US4514895A (fr)
JP (1) JPS59195871A (fr)
FR (1) FR2544916B1 (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS61166074A (ja) * 1985-01-17 1986-07-26 Fujitsu Ltd 絶縁ゲ−ト型トランジスタ及びその製造方法
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
JPS62160712A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol 半導体装置の製造方法
GB2185851A (en) * 1986-01-25 1987-07-29 Plessey Co Plc Method of fabricating an mos transistor
EP0235819B1 (fr) * 1986-03-07 1992-06-10 Iizuka, Kozo Procédé pour fabriquer une couche semi-conductrice monocristalline
US4931424A (en) * 1987-09-04 1990-06-05 Henty David L Method for formation of high temperature superconductor films with reduced substrate heating
JP2813710B2 (ja) * 1988-04-13 1998-10-22 工業技術院長 半導体装置
SG108807A1 (en) * 1989-02-14 2005-02-28 Seiko Epson Corp A semiconductor device and its manufacturing method
US5231297A (en) * 1989-07-14 1993-07-27 Sanyo Electric Co., Ltd. Thin film transistor
GB2238644B (en) * 1989-11-29 1994-02-02 Gen Electric Co Plc Matrix addressable displays
JPH0828520B2 (ja) * 1991-02-22 1996-03-21 株式会社半導体エネルギー研究所 薄膜半導体装置およびその製法
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
JP3315730B2 (ja) * 1991-08-26 2002-08-19 マイクロリス、コーパレイシャン ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法
KR970003848B1 (ko) * 1991-10-17 1997-03-22 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조방법
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP3349355B2 (ja) * 1996-08-19 2002-11-25 三洋電機株式会社 半導体膜のレーザーアニール方法
KR100269312B1 (ko) * 1997-10-14 2000-10-16 윤종용 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법
US6319743B1 (en) 1999-04-14 2001-11-20 Mykrolis Corporation Method of making thin film piezoresistive sensor
KR100371096B1 (ko) * 1999-12-04 2003-02-05 엘지.필립스 엘시디 주식회사 플라즈마와 전계를 이용한 비정질막의 결정화 장비 및 결정화방법
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
WO2002031869A2 (fr) 2000-10-10 2002-04-18 The Trustees Of Columbia University In The City Of New York Procede et appareil destines au traitement d'une couche metallique mince
JP2006512749A (ja) 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 種々の照射パターンを有するシングルショット半導体処理システム及び方法
TWI360707B (en) 2002-08-19 2012-03-21 Univ Columbia Process and system for laser crystallization proc
US7341928B2 (en) * 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US6916694B2 (en) * 2003-08-28 2005-07-12 International Business Machines Corporation Strained silicon-channel MOSFET using a damascene gate process
WO2005029546A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de solidification laterale sequentielle en mouvement continu en vue de reduire ou d'eliminer les artefacts, et masque facilitant une telle reduction/elimination des artefacts
TWI366859B (en) * 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
TWI359441B (en) * 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
JP2005217214A (ja) * 2004-01-30 2005-08-11 Hitachi Ltd 半導体薄膜の製造方法及び画像表示装置
KR100682892B1 (ko) * 2004-09-25 2007-02-15 삼성전자주식회사 박막 트랜지스터의 제조방법
US7223647B2 (en) * 2004-11-05 2007-05-29 Taiwan Semiconductor Manufacturing Company Method for forming integrated advanced semiconductor device using sacrificial stress layer
US7335544B2 (en) * 2004-12-15 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making MOSFET device with localized stressor
JP4818288B2 (ja) * 2008-02-12 2011-11-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR3013506A1 (fr) * 2013-11-15 2015-05-22 St Microelectronics Crolles 2 Formation d'une couche de silicium fortement dopee sur un substrat de silicium plus faiblement dope

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US4187126A (en) * 1978-07-28 1980-02-05 Conoco, Inc. Growth-orientation of crystals by raster scanning electron beam
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5674921A (en) * 1979-11-22 1981-06-20 Toshiba Corp Manufacturing method of semiconductor and apparatus thereof
JPS56135969A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Manufacture of semiconductor device
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS5785262A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of metal oxide semiconductor type semiconductor device
US4319954A (en) * 1981-02-27 1982-03-16 Rca Corporation Method of forming polycrystalline silicon lines and vias on a silicon substrate
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法
US4415383A (en) * 1982-05-10 1983-11-15 Northern Telecom Limited Method of fabricating semiconductor devices using laser annealing

Also Published As

Publication number Publication date
US4514895A (en) 1985-05-07
JPS59195871A (ja) 1984-11-07
FR2544916A1 (fr) 1984-10-26

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