DE2545871B2 - Feldeffekttransistor mit verbesserter Stabilität der Schwellenspannung - Google Patents
Feldeffekttransistor mit verbesserter Stabilität der SchwellenspannungInfo
- Publication number
- DE2545871B2 DE2545871B2 DE2545871A DE2545871A DE2545871B2 DE 2545871 B2 DE2545871 B2 DE 2545871B2 DE 2545871 A DE2545871 A DE 2545871A DE 2545871 A DE2545871 A DE 2545871A DE 2545871 B2 DE2545871 B2 DE 2545871B2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- drain
- region
- area
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052785 arsenic Inorganic materials 0.000 claims description 13
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 13
- 230000002452 interceptive effect Effects 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- -1 Phosphorus ions Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NBMOVCYIGUDQJE-UHFFFAOYSA-N iodinin Chemical compound C1=CC=C2[N+]([O-])=C3C(O)=CC=CC3=[N+]([O-])C2=C1O NBMOVCYIGUDQJE-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53024974A | 1974-12-06 | 1974-12-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2545871A1 DE2545871A1 (de) | 1976-06-10 |
| DE2545871B2 true DE2545871B2 (de) | 1980-06-19 |
| DE2545871C3 DE2545871C3 (enExample) | 1983-03-03 |
Family
ID=24112972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2545871A Granted DE2545871B2 (de) | 1974-12-06 | 1975-10-14 | Feldeffekttransistor mit verbesserter Stabilität der Schwellenspannung |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5168776A (enExample) |
| BE (1) | BE835288A (enExample) |
| BR (1) | BR7508781A (enExample) |
| CH (1) | CH591764A5 (enExample) |
| DE (1) | DE2545871B2 (enExample) |
| ES (1) | ES442755A1 (enExample) |
| FR (1) | FR2293795A1 (enExample) |
| NL (1) | NL7513901A (enExample) |
| SE (1) | SE7513554L (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0337020A1 (en) * | 1987-02-24 | 1989-10-18 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
| JPS5646561A (en) * | 1979-09-26 | 1981-04-27 | Nec Corp | Semiconductor device |
| JPS5685867A (en) * | 1979-12-14 | 1981-07-13 | Nec Corp | Field effect semiconductor device |
| JPS57155771A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0646662B2 (ja) * | 1983-12-26 | 1994-06-15 | 株式会社日立製作所 | 半導体装置 |
| JPS6114765A (ja) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
| JPS61170065A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS61105872A (ja) * | 1985-10-04 | 1986-05-23 | Hitachi Ltd | 半導体装置 |
| DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
| JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
| DE19706282A1 (de) * | 1997-02-18 | 1998-08-20 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
| JP4541582B2 (ja) * | 2001-03-28 | 2010-09-08 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1192325B (de) * | 1960-12-29 | 1965-05-06 | Telefunken Patent | Verfahren zur Herstellung eines Drifttransistors |
| DE1293899C2 (de) * | 1964-08-12 | 1969-12-11 | Telefunken Patent | Planar- oder Mesatransistor und Verfahren zur Herstellung des Planartransistors |
| JPS49105490A (enExample) * | 1973-02-07 | 1974-10-05 |
-
1975
- 1975-10-14 DE DE2545871A patent/DE2545871B2/de active Granted
- 1975-10-24 JP JP50127537A patent/JPS5168776A/ja active Pending
- 1975-10-27 CH CH1387275A patent/CH591764A5/xx not_active IP Right Cessation
- 1975-10-29 FR FR7533870A patent/FR2293795A1/fr active Granted
- 1975-11-05 BE BE161620A patent/BE835288A/xx unknown
- 1975-11-18 ES ES442755A patent/ES442755A1/es not_active Expired
- 1975-11-28 NL NL7513901A patent/NL7513901A/xx not_active Application Discontinuation
- 1975-12-02 SE SE7513554A patent/SE7513554L/xx unknown
- 1975-12-08 BR BR7508781*A patent/BR7508781A/pt unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0337020A1 (en) * | 1987-02-24 | 1989-10-18 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2545871C3 (enExample) | 1983-03-03 |
| FR2293795B1 (enExample) | 1978-05-12 |
| BR7508781A (pt) | 1976-08-24 |
| BE835288A (fr) | 1976-03-01 |
| DE2545871A1 (de) | 1976-06-10 |
| JPS5168776A (en) | 1976-06-14 |
| ES442755A1 (es) | 1977-04-01 |
| CH591764A5 (enExample) | 1977-09-30 |
| NL7513901A (nl) | 1976-06-09 |
| FR2293795A1 (fr) | 1976-07-02 |
| SE7513554L (sv) | 1976-06-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |