EP3282473A4 - Verbindungsdraht für halbleiterbauelement - Google Patents
Verbindungsdraht für halbleiterbauelement Download PDFInfo
- Publication number
- EP3282473A4 EP3282473A4 EP16811374.4A EP16811374A EP3282473A4 EP 3282473 A4 EP3282473 A4 EP 3282473A4 EP 16811374 A EP16811374 A EP 16811374A EP 3282473 A4 EP3282473 A4 EP 3282473A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor device
- bonding wire
- bonding
- wire
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
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- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- B32B15/00—Layered products comprising a layer of metal
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- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C5/04—Alloys based on a platinum group metal
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Landscapes
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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WO2016203659A1 (ja) | 2015-06-15 | 2016-12-22 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
EP3136435B1 (de) | 2015-07-23 | 2022-08-31 | Nippon Micrometal Corporation | Verbindungsdraht für halbleiterbauelement |
WO2017221434A1 (ja) * | 2016-06-20 | 2017-12-28 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
KR102011619B1 (ko) * | 2017-02-22 | 2019-08-16 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
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KR102167478B1 (ko) * | 2017-08-09 | 2020-10-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 반도체 장치용 Cu 합금 본딩 와이어 |
WO2019130570A1 (ja) * | 2017-12-28 | 2019-07-04 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
TWI749372B (zh) * | 2018-09-21 | 2021-12-11 | 日商日鐵化學材料股份有限公司 | 半導體裝置用Cu合金接合導線 |
US10985130B2 (en) * | 2018-09-21 | 2021-04-20 | Nippon Steel Chemical & Material Co., Ltd. | Cu alloy bonding wire for semiconductor device |
CN109402445B (zh) * | 2018-11-09 | 2021-01-15 | 上海理工大学 | 一种抗氧化铜基合金键合引线及其制备方法 |
JP6487108B1 (ja) * | 2018-11-26 | 2019-03-20 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ及びその製造方法 |
JP6507329B1 (ja) | 2019-02-08 | 2019-04-24 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法 |
TWI699468B (zh) * | 2019-04-03 | 2020-07-21 | 精機機械廠股份有限公司 | 縫紉機之三軌送布裝置 |
WO2020246094A1 (ja) | 2019-06-04 | 2020-12-10 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法 |
CN110284023B (zh) * | 2019-07-22 | 2021-02-26 | 安徽广宇电子材料有限公司 | 一种铜合金键合丝及其制备方法和应用 |
DE112020004723T5 (de) * | 2019-10-01 | 2022-06-15 | Tanaka Denshi Kogyo K.K. | Drahtbondstruktur, hierfür verwendeter Bonddraht und Halbleitervorrichtung |
KR20220091299A (ko) | 2020-12-23 | 2022-06-30 | 이하준 | 부상 방지를 위한 리프팅 벨트 |
TWI726836B (zh) * | 2020-12-31 | 2021-05-01 | 大陸商汕頭市駿碼凱撒有限公司 | 銅微合金導線及其製備方法 |
JP7157279B1 (ja) * | 2021-06-25 | 2022-10-19 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
EP4361298A1 (de) * | 2021-06-25 | 2024-05-01 | Nippon Micrometal Corporation | Bonddraht für halbleiterbauelement |
CN115836384B (zh) * | 2021-06-25 | 2024-06-11 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
EP4361301A1 (de) * | 2021-06-25 | 2024-05-01 | Nippon Micrometal Corporation | Bonddraht für halbleiterbauelement |
CN117529802A (zh) * | 2021-06-25 | 2024-02-06 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
WO2022270050A1 (ja) * | 2021-06-25 | 2022-12-29 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
JP7072126B1 (ja) * | 2022-02-10 | 2022-05-19 | 田中貴金属工業株式会社 | Ag-Pd-Cu系合金からなるプローブピン用材料 |
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