JP2006100777A - ボンディングワイヤー及びその製造方法 - Google Patents
ボンディングワイヤー及びその製造方法 Download PDFInfo
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- JP2006100777A JP2006100777A JP2005095807A JP2005095807A JP2006100777A JP 2006100777 A JP2006100777 A JP 2006100777A JP 2005095807 A JP2005095807 A JP 2005095807A JP 2005095807 A JP2005095807 A JP 2005095807A JP 2006100777 A JP2006100777 A JP 2006100777A
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Abstract
【解決手段】 表面において芯材の割合が8at%以下であり、芯材と被覆層が溶融してなる合金の融点が、芯材及び被覆層いずれかの融点よりも高いボンディングワイヤー。芯材は銅及び不可避不純物からなり、被覆層は白金、パラジウム、ルテニウム、ロジウムのいずれか1元素と不可避不純物からなる。芯材と被覆材の拡散層の厚さが200Å以下である。
【選択図】図1
Description
すなわち、ワイヤー先端と電極トーチ間を放電させ、ワイヤー先端を溶融させボンディングボール(以下、ボール)をあらかじめ形成する。その後チップ電極に前記ボールを押圧しつつ超音波を印加して、前記チップ電極と前記ボールと接合する。次いで超音波を印加してリードとワイヤーを接合し、ワイヤーボンディング工程を終了する。この際、チップ電極とリードの間を接続しているワイヤーの形状をループと呼び、チップ電極接合後にワイヤーに歪みを与え、隣り合うワイヤー同士が電気的に短絡しないようにループ形成する。
銅芯材の表面に金、パラジウム、白金の被覆層をメッキした例がある(例えば、特許文献1)。しかし、銅芯材に被覆層として金をメッキしたワイヤーの場合、良好な球状のボールが得られないという問題がある。この原因として、ボール形成時に芯材の銅とメッキの金からなる合金が生成するが、前記合金の融点は純銅や純金より低いことが考えられている。このため、芯材と被覆層の合金の融点が高くなる被覆層としてパラジウム、白金などが用いられることが多い。銅芯材の表面にパラジウム、白金、ニッケルの被覆層をメッキしたワイヤーの例がある(例えば、特許文献2)。この場合はボールが小径でも形状を良好にすることができる。また、リードフレームへパラジウムメッキした例がある。(例えば、特許文献3)
この問題を回避するため被覆層を厚くすると、ボール形成時に被覆層が溶融して合金が形成する際に合金中の被覆層の割合が高くなり、ボールの硬度が増加してしまいチップ電極にダメージが生じる(チップクレータリング)という問題が生じてしまう。
すなわち、本発明は、
(1)芯材と被覆層からなるボンディングワイヤーにおいて、前記ボンディングワイヤーの表面に芯材の元素の割合が8at%以下であり、前記芯材と前記被覆層が溶融してなる合金の融点が、前記芯材及び前記被覆層いずれかの融点よりも高いことを特徴とするボンディングワイヤー、
(2)芯材と被覆層からなるボンディングワイヤーにおいて、前記芯材は銅及び不可避不純物からなり、前記被覆層は白金、パラジウム、ルテニウム、ロジウムのいずれか1元素と不可避不純物からなり、前記ボンディングワイヤーの表面に銅の割合が8at%以下であることを特徴とするボンディングワイヤー、
(3)前記ボンディングワイヤーの被覆層の厚さが50Å以上で、かつボンディングワイヤーの断面において、X=被覆層面積/(芯材面積+被覆層面積)とした場合、X<0.0065であることを特徴とするボンディングワイヤー、
(4)芯材と被覆材の拡散層の厚さが200Å以下であることを特徴とするボンディングワイヤー、
(5)ボンディングワイヤーの製造方法であって、メッキ浴の金属濃度が3〜20g/Lであり、電流密度が4.0〜50A/dm2であることを特徴とするボンディングワイヤーの製造方法、
を提供する。
本願発明のワイヤーは直径1〜20mm程度の芯材を冷間にて伸線し、被覆層を形成する。本発明では、被覆層を形成する際、メッキ浴への芯材の溶け出しを小さくおさえて短時間で被覆材を形成する。その後、所定の径まで伸線し、最終焼鈍により強度を調整する。
次いで被覆層を形成する。パラジウムを電気メッキにて芯材に被覆するとき、アンモニア水を含むメッキ液に浸すため、電流密度によっては芯材である銅が容易にメッキ液中に溶け出す。そのためパラジウムが芯材に均一にメッキされず下地の銅が表面に露出しやすい。
メッキ浴のpHは8〜12の間になるようにpHを調整した。
通常のメッキ条件より電流密度が高いため、芯材が被覆材に拡散するのを防ぎ、ワイヤー表面にて、芯材の元素の割合を低くすることができる。さらに、被覆材と芯材の拡散層の厚さを小さくすることができる。そのため、薄い被覆材のメッキでボンディング性の優れたワイヤーを製造することができる。
本発明では、被覆層と芯材が混在する拡散層の厚さが200Å以下である。拡散層が厚いと表面に芯材が露出しやすく、耐酸化性が劣り、ボンディング強度が低下する。拡散層を極力小さくすると、薄い被覆層で十分な耐酸化性を示す。拡散層の厚さとは、被覆材と芯材の元素が混合している領域である。オージェ電子分光法を用い、スパッタしながら検出元素を測定し、被覆元素/(芯材元素+被覆元素)のat%比が10〜90%の領域を拡散層として求めた。
本発明でいう、被覆層厚さと拡散層の厚さは図1に示すオージェ電子分光法を用いた測定から得られるものである。
耐破断性はSEMI G73−0997に基づくワイヤープル試験と、EIAJ(日本電子機械工業会)ED−4703 113に基づくボールシェアを行い、破断強度、破断箇所の回数を記録した。ワイヤープル試験とボールシェア試験は、各ワイヤーにつき50点のボンディングをおこなった。プル速度は0.5mm/秒とし、ボールシェア速度はと0.2mm/秒とした。
破断箇所は以下のように分類した。すなわち、ボール接合部の下である半導体チップが破壊した場合はチップクレータリング、ボールとワイヤーの界面で切断した場合はネック部、リードフレームとワイヤーの界面で破断した場合はセカンド部、ワイヤーが破断した場合はループ部、チップ界面で破断したものはアルミ界面、ボールが破壊した場合はボール部と分類した。
表1に示すように被覆層の元素と厚さが異なるワイヤーをボンディングした後に各種評価を行った。ボールの放電加工は電流を40mA、時間を1.4ミリ秒で行い、0.5L/分の流量で99.99%の窒素ガスをボール形成部に吹きかけ、直径60ミクロンのボールを作製した。半導体チップに形成した0.5ミクロン厚のアルミ電極にファーストボンディングをおこない、5ミクロン厚のAgメッキをあらかじめ施したリードフレームにセカンドボンディングをおこなった。ボンディング条件は、ファーストボンディングでは、時間25ミリ秒、荷重45g、超音波出力20%(最大出力2.25W)、セカンドボンディングでは時間25ミリ秒、荷重60g、超音波出力40%(最大出力2.25W)にておこなった。なお、ステージ温度は200℃とした。各種評価の結果を表1に示す。
表2に示すメッキ条件により、被覆層としてパラジウムの厚さが50Å〜400Åであるワイヤーを作製した。その他の条件は実施例1と同様である。ボールへの加工条件は45mA、1.4msec、5%水素と窒素との混合ガスを0.7L/分流した。ボンディング条件は、ファーストボンディングでは、時間25ミリ秒、荷重45g、超音波出力20%(最大出力2.25W)、セカンドボンディングでは、時間25ミリ秒、荷重60g、超音波出力40%(最大出力2.25W)にておこなった。なお、ステージ温度は200℃とした。表面の芯材である銅の露出量、および、オージェ電子分光による拡散層の厚さ、ワイヤーボンディング後のプル試験の結果を表2に示す。また、図1に、本発明に関わるボンディングワイヤーと(図1−1)、本発明の限定外の条件で作成したボンディングワイヤー(図1−2)のオージェ電子分光分析結果の代表例を示す。
Claims (5)
- 芯材と被覆層からなるボンディングワイヤーにおいて、前記ボンディングワイヤーの表面に芯材の元素の割合が8at%以下であり、前記芯材と前記被覆層が溶融してなる合金の融点が、前記芯材及び前記被覆層いずれかの融点よりも高いことを特徴とするボンディングワイヤー。
- 芯材と被覆層からなるボンディングワイヤーにおいて、前記芯材は銅及び不可避不純物からなり、前記被覆層は白金、パラジウム、ルテニウム、ロジウムのいずれか1元素と不可避不純物からなり、前記ボンディングワイヤーの表面に銅の割合が8at%以下であることを特徴とする請求項1に記載のボンディングワイヤー。
- 前記ボンディングワイヤーの被覆層の厚さが50Å以上で、かつボンディングワイヤーの断面において、X=被覆層面積/(芯材面積+被覆層面積)とした場合、X<0.0065であることを特徴とする請求項1または2記載のボンディングワイヤー。
- 芯材と被覆材の拡散層の厚さが200Å以下であることを特徴とする請求項1ないし3のいずれかに記載のボンディングワイヤー。
- ボンディングワイヤーの製造方法であって、メッキ浴の金属濃度が3〜20g/Lであり、電流密度が4.0〜50A/dm2であることを特徴とするボンディングワイヤーの製造方法。
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