TWI514544B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI514544B
TWI514544B TW099130023A TW99130023A TWI514544B TW I514544 B TWI514544 B TW I514544B TW 099130023 A TW099130023 A TW 099130023A TW 99130023 A TW99130023 A TW 99130023A TW I514544 B TWI514544 B TW I514544B
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Taiwan
Prior art keywords
semiconductor
semiconductor device
epoxy resin
wire
thickness
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TW099130023A
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English (en)
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TW201123407A (en
Inventor
Shingo Itoh
Original Assignee
Sumitomo Bakelite Co
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Publication of TW201123407A publication Critical patent/TW201123407A/zh
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Publication of TWI514544B publication Critical patent/TWI514544B/zh

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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Description

半導體裝置
本發明係關於半導體裝置。
由於電子機器之小型化、輕量化、高性能化之要求而開發了多晶片技術。將複數之半導體元件作為單一封裝形態的半導體裝置，使其對電子機器的搭載面積減小，並縮短各半導體元件之佈線距離，藉此可提升性能(例如參照專利文獻1、2、3)。
習知，半導體裝置與引線框架之引線端子的接合，一般係藉金線所接合(例如參照專利文獻3之段落0015)。
另外，習知以來，積體電路、二極體、電晶體等之半導體裝置主要藉由半導體密封用環氧樹脂組成物之硬化物所密封。尤其在積體電路中，係使用調配了環氧樹脂、酚樹脂系硬化劑及無機填充材，且耐熱性、耐濕性優越的半導體密封用環氧樹脂組成物。近年來，在半導體元件之高積體化逐年進展，且促進半導體裝置之表面安裝化中，對半導體元件之密封所使用的半導體密封用環氧樹脂組成物的要求變得日益嚴苛。
對於使用了多晶片技術之半導體裝置的應用亦為對此種嚴苛要求的對應之一。於多晶片型中尤其是積層了半導體元件者的流路狹窄而複雜，成形時之半導體密封用環氧樹脂組成物的流動限制大。因此，有發生半導體密封用環氧樹脂組成物之未填充的問題。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2005-340766號公報
[專利文獻2]日本專利特開2006-019531號公報
[專利文獻3]日本專利特開2007-134486號公報
[專利文獻4]日本專利特開2001-151866號公報
本發明提供一種半導體裝置，其係半導體密封用環氧樹脂組成物之未填充的發生較少、可靠性優越。
本發明係如以下所述。
[1]
一種半導體裝置，係於引線框架上積層搭載2個以上之半導體元件，將上述引線框架與上述半導體元件以導線予以電性接合，將上述半導體元件與上述導線與電性接合部藉半導體密封用環氧樹脂組成物之硬化物密封而成者；上述半導體密封用環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)無機填充材；上述(C)無機填充材係含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上。
[2]
如[1]之半導體裝置，其中，藉由積層上述半導體元件以設置空隙部，於上述空隙部中填充上述半導體密封用環氧樹脂組成物之硬化物，構成具有最薄之上述填充厚度的填充部。
[3]
如[2]之半導體裝置，其中，上述半導體元件與上述半導體元件之間的上述空隙部、或上述半導體元件與上述引線框架之間的上述空隙部中，積層方向上最薄厚度係相當於最薄之上述填充厚度。
[4]
如[1]至[3]項中任一項之半導體裝置，其中，上述導線為銅製導線。
[5]
如[1]至[4]項中任一項之半導體裝置，其係於上述引線框架經由間隔件積層搭載上述半導體元件者，上述(C)無機填充材係含有上述間隔件厚度之2/3以下之粒徑的粒子99.9質量%以上。
[6]
如[1]至[5]項中任一項之半導體裝置，其中，上述(C)無機填充材含有二氧化矽。
[7]
如[1]至[6]項中任一項之半導體裝置，其中，將上述引線框架與上述半導體元件藉上述導線之反向焊接進行電性接合。
[8]
如[4]之半導體裝置，其中，上述銅製導線之銅純度為99.99質量%以上。
[9]
如[4]或[8]之半導體裝置，其中，上述銅製導線係於其表面具有由含鈀之金屬材料所構成的被覆層。
[10]
如[9]之半導體裝置，其中，上述被覆層之厚度為0.001μm以上且0.02μm以下。
[11]
如[5]之半導體裝置，其中，上述間隔件之厚度為0.01mm以上且0.2mm以下。
依照本發明，可得到半導體密封用環氧樹脂組成物之未填充發生較少、可靠性優越的半導體裝置。
上述目的及其他目的、特徵以及優點，將藉由以下所述之較佳實施形態、及隨附的以下圖式進一步闡明。
以下，詳細說明本發明之半導體裝置。本發明之半導體裝置係於引線框架上積層搭載2個以上半導體元件，將引線框架與半導體元件藉導線予以電性接合，將半導體元件與導線與電性接合部藉本發明之半導體密封用環氧樹脂組成物的硬化物密封而成者，半導體密封用環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)無機填充材，(C)無機填充材係含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上，屬於半導體密封用環氧樹脂組成物之未填充發生較少的可靠性優越的半導體裝置。
以下，針對各構成進行詳細說明。
首先，說明本發明之半導體裝置所使用的導線。導線係用於將引線框架、與搭載於引線框架上之半導體元件進行電性連結。於半導體元件之領域中，係為了提升積體度而要求狹窄之焊墊間距、較小導線徑，具體而言，係要求30μm以下、更佳25μm以下之導線徑。導線並無特別限定，較佳為含有例如金、鋁、銅、銅合金等。又，由電特性、低成本之觀點而言，導線較佳係以銅作為主成分。
本發明之半導體裝置中可使用的銅製導線，係30μm以下、更佳25μm以下之導線徑，且較佳為15μm以上的導線徑。若為此範圍，則銅製導線前端的球形狀安定，可提升接合部分之連接可靠性。又，藉由使用銅製導線作為導線，則可藉銅製導線本身的硬度減低導線流動。
本發明之銅製導線並無特別限定，較佳係銅純度99.99質量%以上、更佳99.999質量%以上。一般藉由對銅添加各種元素(摻雜物)，可達到接合時之銅製導線前端的球側形狀安定化，但若添加大於0.01質量%的大量摻雜物，則於導線接合時因球部分變硬而對半導體元件之電極墊側造成損傷，而發生起因於接合不足之耐濕可靠性降低、高溫保管特性降低、電阻值增大等不良情況。相對於此，若為銅純度99.99質量%以上之銅製導線，則由於球部分具有充分的柔軟性，故沒有於接合時對墊側造成損傷之虞。又，本發明之半導體裝置中可使用的銅製導線，係藉由於芯線之銅中摻雜例如0.001~0.003質量%之Ba、Ca、Sr、Be、Al或稀土族金屬等摻雜物，而進一步改善球形狀與接合強度。
本發明之銅製導線並無特別限定，較佳係於其表面具有由含鈀之金屬材料所構成的被覆層。此被覆層較佳係至少被覆接合部分之銅製導線前端的整面，更佳係被覆銅製導線整體的整面。藉此，可使銅製導線前端的球形狀安定，提升接合部分之連接可靠性。又，亦可得到防止芯線之銅之氧化劣化的效果，可提升接合部分之高溫保管特性。
作為本發明之銅製導線中由含鈀之金屬材料所構成的被覆層的厚度，較佳為0.001~0.02μm、更佳0.005~0.015μm(以下，在未特別明示下，「~」表示包括上限值與下限值)。若超過上述上限值，則導線焊接時，芯線之銅與被覆材中含鈀之金屬材料未充分熔合而使球形狀不安定，有接合部分之耐濕性、高溫保管特性降低之虞。又，若低於上述下限值，則無法充分防止芯線之銅的氧化劣化，同樣地有接合部分之耐濕性、高溫保管特性降低之虞。
本發明之銅製導線係於熔解爐鑄造銅合金，將其鑄塊進行輥軋，再使用模具進行拉線加工，一邊連續地對導線進行掃動拉引、一邊實施加熱之後熱處理則可獲得。又，本發明之被覆層係事先準備所需導線徑之線，將其浸漬於含鈀之電解溶液或無電解溶液中，予以連續掃動拉引並鍍敷，藉此可形成。此時，本發明之被覆層厚度可藉由掃動拉引速度進行調整。又，亦可採取準備較所需粗之線，將其浸漬於電解溶液或無電解溶液中並予以連續掃動拉引而形成被覆層，再進行拉線至既定直徑為止的手法。
接著，說明本發明之半導體裝置中所使用之半導體密封用環氧樹脂組成物。本發明之半導體密封用環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)無機填充材，(C)無機填充材係含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上者。以下，針對本發明之半導體密封用環氧樹脂組成物之各構成成分進行說明。
本發明之半導體密封用環氧樹脂組成物中，可使用(A)環氧樹脂。(A)環氧樹脂係於1分子內具有2個以上環氧基之所有單體、寡聚物、聚合物，其分子量、分子構造並無特別限定，可舉例如：聯苯型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂等之結晶性環氧樹脂；酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等之酚醛清漆型環氧樹脂；三酚甲烷型環氧樹脂、烷基改質三酚甲烷型環氧樹脂等之多官能環氧樹脂；具有伸苯基骨架之酚芳烷基型環氧樹脂、具有伸聯苯基骨架之酚芳烷基型環氧樹脂等之芳烷基型環氧樹脂；二羥基萘型環氧樹脂、使二羥基萘之二聚體經環氧丙基醚化而得的環氧樹脂等之萘酚型環氧樹脂；三環氧丙基三聚異氰酸酯、單烯丙基二環氧丙基三聚異氰酸酯等之含三核環氧樹脂；二環戊二烯改質酚型環氧樹脂等之有橋環狀烴化合物改質酚型環氧樹脂；此等可單獨使用1種，亦可併用2種以上。
(A)環氧樹脂整體之調配比例的下限值並無特別限定，係相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為3質量%以上、更佳5質量%以上。若(A)環氧樹脂整體之調配比例為上述範圍內，則因黏度上升而引起導線斷裂的疑慮較少。又，(A)環氧樹脂整體之調配比例之上限值並無特別限定，係相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為20質量%以下、更佳18質量%以下。若(A)環氧樹脂整體之調配比例之上限值為上述範圍內，則因吸水率增加而引起耐濕可靠性之降低等的疑慮較少。
本發明之半導體密封用環氧樹脂組成物中，可使用(B)硬化劑。作為(B)硬化劑，可大致分為例如聚加成型之硬化劑、觸媒型之硬化劑、縮合型之硬化劑等3類型。
作為聚加成型之(B)硬化劑，可舉例如：二乙三胺(DETA)、三乙四胺(TETA)、間二甲苯二胺(MXDA)等之脂肪族多胺，二胺基二苯基甲烷(DDM)、間苯二胺(MPDA)、二胺基二苯基碸(DDS)等之芳香族多胺，含有二氰二醯胺(DICY)、有機酸二醯肼等之多胺化合物；包括六氫酞酸酐(HHPA)、甲基四氫酞酸酐(MTHPA)等之脂環族酸酐、1,2,4-苯三甲酸酐(TMA)、1,2,4,5-苯四甲酸酐(PMDA)、二苯基酮四羧酸(BTDA)等之芳香族酸酐等之酸酐；酚醛清漆型酚樹脂、酚聚合物等之多酚化合物；多硫化物、硫酯、硫醚等之多硫醇化合物；異氰酸酯預聚物、嵌段化異氰酸酯等之異氰酸酯化合物；含羧酸之聚酯樹脂等之有機酸類等。
作為觸媒型之(B)硬化劑，可舉例如苄基二甲基胺(BDMA)、2,4,6-參(二甲基胺基甲基)酚(DMP-30)等之3級胺化合物；2-甲基咪唑、2-乙基-4-甲基咪唑(EMI24)等之咪唑化合物；BF3錯合物等之路易斯酸等。
作為縮合型之(B)硬化劑，可舉例如酚醛清漆型酚樹脂、可溶酚醛型酚樹脂等之酚樹脂系硬化劑；含羥甲基之尿素樹脂般之尿素樹脂；含羥甲基之三聚氰胺樹脂般之三聚氰胺樹脂等。
此等之中，由耐燃性、耐濕性、電特性、硬化性、保存安定性等之均衡的觀點而言，較佳為酚樹脂系硬化劑。酚樹脂系硬化劑係於一分子內具有2個以上酚性羥基之所有單體、寡聚物、聚合物，其分子量、分子構造並無特別限定，可舉例如：酚酚醛清漆樹脂、甲酚酚醛清漆樹脂等之酚醛清漆型樹脂；三酚甲烷型酚樹脂等之多官能型酚樹脂；萜烯改質酚樹脂、二環戊二烯改質酚樹脂等之改質酚樹脂；具有伸苯基骨架及/或伸聯苯基骨架之酚芳烷基樹脂、具有伸苯基及/或伸聯苯基骨架之萘酚芳烷基樹脂等之芳烷基型樹脂；雙酚A、雙酚F等之雙酚化合物；此等可單獨使用1種，亦可併用2種以上。
關於(B)硬化劑整體之調配比例的下限值並無特別限定，相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為0.8質量%以上、更佳1.5質量%以上。若調配比例之下限值為上述範圍內，可得到充分的流動性。又，關於(B)硬化劑整體之調配比例的上限值，並無特別限定，係相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為16質量%以下、更佳14質量%以下。若調配比例之上限值為上述範圍內，則因吸水率增加而引起耐濕可靠性降低等的疑虞較少。
另外，在使用酚樹脂系硬化劑作為硬化劑(B)的情況，作為環氧樹脂與酚樹脂系硬化劑之調配比例，較佳係總環氧樹脂之環氧基數(EP)與總酚樹脂系硬化劑之酚性羥基數(OH)的當量比(EP)/(OH)為0.8以上且1.3以下。若當量比為此範圍，則發生本發明之半導體密封用環氧樹脂組成物之硬化性降低、或本發明之半導體密封用環氧樹脂組成物之硬化物物性降低等的疑虞較少。
本發明之半導體密封用環氧樹脂組成物係含有(C)無機填充材，(C)無機填充材可使用含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上者。藉由使用此範圍者，則亦可應用至積層了半導體元件之半導體裝置、導線間距狹窄的半導體裝置中。藉由成為此範圍，可抑制半導體密封用環氧樹脂組成物之未填充或粗大粒子夾在導線間而推擠的導線流動。此種無機填充材係將市售之無機填充材直接、或混合複數種，予以篩分等，藉此進行調整而獲得。又，本發明所使用之無機填充材之粒度分佈，可使用市售之雷射式粒度分佈計(例如，島津製作所(股)製SALD-7000等)而測定。於此，最薄填充厚度係相當於積層半導體元件時所形成之空隙部之積層方向之厚度中最薄的厚度，例如，較佳係相當於經由間隙件所積層之2個半導體元件間之空隙部之積層方向之厚度中最薄的厚度，或經積層之半導體元件與引線框架間之空隙部之積層方向之厚度中最薄的厚度。
於此，專利文獻4中記載有一種密封用環氧樹脂成形材料，係於一般的半導體裝置中，無機填充劑為粒徑100μm以上之成分為0.1重量%以下的熔融二氧化矽。
相對於此，經本發明者檢討的結果，判明了在積層半導體元件時所形成的空隙部(例如，經由間隔件所積層之2個半導體元件之間的空隙部，或於半導體元件與引線框架之間的空隙部)中，上述專利文獻4記載之無機填充劑將有填充性不足的情形。因此，相對於該空隙部之積層方向之厚度中最薄的厚度(最薄填充厚度)，將較最薄填充厚度之2/3大之粒徑的(C)無機填充材設為未滿0.1質量%，則可得到未填充之發生較少且可靠性優越的半導體裝置。
於此，專利文獻3中係使用強度較銅線低之金線作為導線。一般而言，若減小無機填充劑之粒徑，則密封樹脂的黏度變高。因此，於專利文獻3，在以含無機填充劑之密封樹脂進行密封時，若減小無機填充劑之粒徑，則有導線流動率降低之虞。
相對於此，本發明中，(C)無機填充材為使用含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上者，並適當選擇導線之材料體或導線徑，藉此可提升填充性，亦得到導線流動率優越的半導體裝置。又，尤其是藉由使用強度較金製導線高之銅製導線作為導線，則可得到導線流動率更優越、狹間距性更優越的半導體裝置。
作為(C)無機填充材，可使用一般之半導體密封用環氧樹脂組成物所使用者。可舉例如熔融球狀二氧化矽、熔融破碎二氧化矽、結晶二氧化矽、滑石、氧化鋁、鈦白、氮化矽等。其中，特佳為熔融球狀二氧化矽。作為(C)無機填充材，可單獨使用此等之1種或併用2種以上。又，作為(C)無機填充材之形狀，為了抑制本發明之半導體密封用環氧樹脂組成物之熔融黏度上升，並提高(C)無機填充材之含量，較佳係儘可能為真球狀，且粒度分佈寬廣。又，亦可藉偶合劑對(C)無機填充材進行表面處理。再者，視需要亦可事先對(C)無機填充材藉環氧樹脂或酚樹脂進行處理。作為處理之方法，有如使用溶媒予以混合後再去除溶媒的方法，或直接添加至無機填充材，使用混合機進行混合處理的方法等。
(C)無機填充材之含有比例並無限定，若考慮到本發明之半導體密封用環氧樹脂組成物之填充性、本發明之半導體裝置的可靠性，則相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為60質量%以上、更佳65質量%以上。若為不小於上述下限值之範圍，則由於可得到低吸濕性、低熱膨脹性，故耐濕可靠性不足的疑慮較少。又，若考慮到成形性，(C)無機填充材之含有比例的上限值係相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為92質量%以下、更佳89質量%以下。若為不超過上述上限值之範圍，則流動性降低且於成形時發生填充不良等、或因高黏度化而發生半導體裝置內之導線流動等不良情況的疑虞較少。
本發明之半導體密封用環氧樹脂組成物中，可進一步使用硬化促進劑。硬化促進劑若為促進環氧樹脂之環氧基與硬化劑(例如，酚樹脂系硬化劑之酚性羥基)間之交聯反應者即可，可使用一般之半導體密封用環氧樹脂組成物所使用者。可舉例如1,8-二吖雙環(5,4,0)十一烯-7等之二吖雙環烯及其衍生物；三苯基膦、甲基二苯基膦等之有機膦類；2-甲基咪唑等之咪唑化合物；四苯基鏻‧四苯基硼酸酯等之四取代鏻‧四取代硼酸酯；膦化合物與醌化合物之加成物等；此等可單獨使用1種，亦可併用2種以上。
作為硬化促進劑之調配比例的下限值並無特別限定，相對於本發明之半導體密封用環氧樹脂組成物整體，較佳為0.05質量%以上、更佳0.1質量%以上。若硬化促進劑之調配比例之下限值為上述範圍內，則引起硬化性降低的疑虞較少。又，作為硬化促進劑之調配比例的上限值並無特別限定，相對於半導體密封用環氧樹脂組成物整體，較佳為1質量%以下、更佳0.5質量%以下。若硬化促進劑之調配比例之上限值為上述範圍內，則引起流動性降低之疑慮較少。
本發明之半導體密封用環氧樹脂組成物中，視需要可進一步適當調配氫氧化鋯等之鋁防腐劑；氧化鉍水合物等之無機離子交換體；γ-環氧丙氧基丙基三甲氧基矽烷、3-巰基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷等之偶合劑；碳黑、鐵丹等之著色劑；聚矽氧橡膠等之低應力成分；巴西棕櫚蠟等之天然蠟、合成蠟、硬脂酸鋅等之高級脂肪酸及其金屬鹽類或石蠟等之脫模劑；抗氧化劑等之各種添加劑。
本發明之半導體密封用環氧樹脂組成物，係將上述各成分例如使用混合器等進行常溫混合者，再於其後，以輥、捏合機、擠出機等之混練機進行熔融混練，冷卻後予以粉碎者等，視需要可使用經適當調整了分散度或流動性等者。
其次，說明本發明之半導體裝置的構造。圖1及圖2為表示使用本發明之半導體密封用環氧樹脂組成物之半導體裝置100一例的剖面圖。本發明之半導體裝置係於引線框架上積層搭載2個以上半導體元件，將引線框架與半導體元件以導線予以電性接合，將半導體元件與導線與電性接合部藉本發明之半導體密封用環氧樹脂組成物之硬化物密封而成。亦即，圖1所示之本發明之半導體裝置100中，係於引線框架10之晶粒座3上，經由接黏劑層2固定半導體元件1。積層於此半導體元件1上，經由間隔件7固定半導體元件11。將此等半導體元件1、11之電極墊與引線框架10之引線部5藉導線4進行電性連接。半導體元件1、11係由本發明之半導體密封用樹脂組成物之硬化體6所密封。此半導體裝置100中，藉由經由間隔件7於半導體元件1上積層半導體元件11，而於半導體元件1與半導體元件11之間設置空隙部，於此空隙部中填充本發明之半導體密封用環氧樹脂組成物之硬化物(硬化體6)，構成具有最薄填充厚度L之填充部。又，於半導體裝置100中，最薄填充厚度L係相當於間隔件7之積層方向之厚度中的最薄厚度。
於此，間隔件7之積層方向之厚度並無特別限定，較佳為0.01mm以上且0.2mm以下，更佳0.05mm以上且0.15mm以下。
另外，圖2所示之本發明之半導體裝置100中，係於引線框架8上，經由接黏劑層2固定半導體元件1。於此半導體元件1上予以懸突(overhang)積層，經由接黏劑層12固定半導體元件11。將此等半導體元件1、11之電極墊與引線框架8、9藉導線4進行電性連接。半導體元件1、11係藉本發明之半導體密封用樹脂組成物之硬化體6所密封。此半導體裝置100中，經懸突而於半導體元件1上積層半導體元件11，藉此於半導體元件11與引線框架8之間設置空隙部，於此空隙部中填充本發明之半導體密封用環氧樹脂組成物之硬化物(硬化體6)，構成具有最薄填充厚度L之填充部。又，於半導體裝置100中，最薄填充厚度L係相當於所積層之半導體元件11與引線框架8之空隙部於積層方向之厚度中的最薄厚度。
如此，作為以本發明之半導體密封用環氧樹脂組成物進行密封的半導體元件，並無特別限定，可舉例如積體電路、大規模積體電路、固體攝像元件等。作為半導體裝置之具體形態，可舉例如TSOP、QFP等。第1段之半導體元件係藉由薄膜接黏劑、熱硬化性接黏劑等而接黏於引線框架之架(island)上。第2段之後的半導體元件係藉絕緣性之薄膜接黏劑予以依序積層。為了防止導線與半導體元件之干涉、接觸，可將第2段之後的半導體元件懸突(使半導體元件之一部分未接黏)接黏，亦可經間隔件予以接黏。由應力緩和之觀點而言，間隔件較佳係熱膨脹率與半導體元件接近者。上述中，將第2段之後之半導體元件予以懸突(使半導體元件之一部分未接黏)接黏時的接黏劑周邊部，以及經由間隔件接黏時之間隔件周邊部，係相當於在引線框架上積層搭載了2個以上半導體元件之半導體裝置中的最薄填充厚度。
引線框架之引線部與半導體元件較佳係藉導線之反向焊接予以接合。反向焊接時，首先於半導體元件之墊部上接合形成於導線前端的焊球，切斷導線而形成縫焊用之凸塊。接著對引線框架之經金屬鍍敷的框架部，接合形成於導線前端的焊球，並縫焊至半導體元件的凸塊。反向焊接時，由於可較正向焊接更加減低半導體元件上的導線高度，故可減低半導體元件的接合高度。
本發明之半導體裝置，係使用本發明之半導體密封用環氧樹脂組成物，對半導體元件等之電子零件進行密封，藉轉移模製、壓縮模製、射出模製等之習知成形方法進行硬化成形而獲得。藉轉移模製等成形方法所密封的半導體裝置，較佳係直接，或以80℃~200℃左右之溫度，歷時10分鐘~10小時左右的時間使其完全硬化後，搭載於電子機器上。
如以上，依照本發明，由於可得到本發明之半導體密封用環氧樹脂組成物之未填充發生較少、可靠性優越的半導體裝置，故適合使用於流路狹窄複雜之多晶片型之半導體裝置，尤其是積層搭載了半導體元件的半導體裝置。
尚且，上述實施形態及複數之變形例當然可在不違反其內容的範圍內進行組合。又，上述實施形態及變形例中，雖具體說明了各部構造等，但其構造等係在滿足本案發明的範圍內可進行各種變更。
(實施例)
以下表示本發明之實施例，但本發明並不限定於此等。調配比例設為質量份。實施例、比較例中所使用之半導體密封用環氧樹脂組成物的各成分，如以下所示。
半導體密封用環氧樹脂組成物之各成分：
鄰甲酚酚醛清漆型環氧樹脂(E-1：日本化藥(股)製，EOCN1020，軟化點55℃、環氧當量196)
具有伸聯苯基骨架之酚芳烷基型環氧樹脂(E-2：日本化藥(股)製，NC3000，軟化點58℃、環氧當量274)
酚酚醛清漆樹脂(H-1：住友BAKELITE(股)製，PR-HF-3，軟化點80℃、羥基當量104)
具有伸聯苯基骨架之酚芳烷基樹脂(H-2：明和化成(股)製，MEH-7851SS，軟化點65℃、羥基當量203)
熔融球狀二氧化矽-1(電氣化學工業(股)製，FB-100X，100μm以下之粒子比例：＞99.9質量%，67μm以下之粒子比例：87.4質量%)
熔融球狀二氧化矽-2(電氣化學工業(股)製，將FB-100X以300網目之篩經篩分者，67μm以下之粒子比例：＞99.9質量%，33μm以下之粒子比例：73.7質量%)
熔融球狀二氧化矽-3(電氣化學工業(股)製，FB-5SDC，33μm以下之粒子比例：＞99.9質量%)
硬化促進劑：三苯基膦(TPP)
矽烷偶合劑：環氧矽烷(γ-環氧丙氧基丙基三甲氧基矽烷)
著色劑：碳黑
脫模劑：巴西棕櫚蠟
填充性及導線流動率之評估中所使用的各半導體封裝：
PKG-1：44pTSOP。封裝尺寸：18×10×1.0mm，42合金引線框架。架尺寸：5.0×8.5mm，第一段之晶片尺寸：4.5×8.0×0.10mm。間隔件尺寸：3×5×0.15mm。第二段之晶片尺寸：4.5×8.0×0.10mm。銅製導線：於Tatsuta電線(股)製TC-E(銅純度99.99質量%，線徑25μm)上實施了0.01μm之鈀被覆者。晶片與引線係以反向焊接進行接合。
PKG-2：44pTSOP。封裝尺寸：18×10×1.0mm，42合金引線框架。架尺寸：5.0×8.5mm，第一段之晶片尺寸：4.5×8.0×0.10mm。間隔件尺寸：3×5×0.10mm。第二段之晶片尺寸：4.5×8.0×0.10mm。銅製導線：於Tatsuta電線(股)製TC-E(銅純度99.99質量%，線徑25μm)上實施了0.01μm之鈀被覆者。晶片與引線係以反向焊接進行接合。
PKG-3：44pTSOP。封裝尺寸：18×10×1.0mm，42合金引線框架。架尺寸：5.0×8.5mm，第一段之晶片尺寸：4.5×8.0×0.10mm。間隔件尺寸：3×5×0.05mm。第二段之晶片尺寸：4.5×8.0×0.10mm。銅製導線：於Tatsuta電線(股)製TC-E(銅純度99.99質量%，線徑25μm)上實施了0.01μm之鈀被覆者。晶片與引線係以反向焊接進行接合。
PKG-4：44pTSOP。封裝尺寸：18×10×1.0mm，42合金引線框架。架尺寸：5.0×8.5mm，第一段之晶片尺寸：4.5×8.0×0.10mm。間隔件尺寸：3×5×0.15mm。第二段之晶片尺寸：4.5×8.0×0.10mm。金導線：Kulicke&Soffa,Ltd.製AW66(金純度99.99質量%，線徑25μm)。晶片與引線係以反向焊接進行接合。
PKG-5：44pTSOP。封裝尺寸：18×10×1.0mm，42合金引線框架。架尺寸：5.0×8.5mm，第一段之晶片尺寸：4.5×8.0×0.10mm。間隔件尺寸：3×5×0.10mm。第二段之晶片尺寸：4.5×8.0×0.10mm。金導線：Kulicke&Soffa,Ltd.製AW66(金純度99.99質量%，線徑25μm)。晶片與引線係以反向焊接進行接合。
半導體密封用環氧樹脂組成物之製造：
(實施例1)
E-1　12.43質量份
H-1　6.52質量份
熔融球狀二氧化矽-1　80質量份
TPP　0.15質量份
環氧矽烷　0.2質量份
碳黑　0.3質量份
巴西棕櫚蠟　0.4質量份
將上述者於常溫下使用混合器混合，接著於70~100℃進行輥混練，冷卻後予以粉碎得到半導體密封用環氧樹脂組成物。
(實施例2~5，比較例1~2)
依照表1記載之半導體密封用環氧樹脂組成物配方，與實施例1同樣地得到半導體密封用環氧樹脂組成物。
針對各實施例及各比較例所得之半導體密封用環氧樹脂組成物，進行以下評估。將所得結果示於表1。
評估方法
(半導體密封用環氧樹脂組成物之評估)
螺旋流動：使用低壓轉移成形機(Kohtaki精機(股)製，KTS-15)，以EMMI-1-66為基準，於螺旋流動測定用的金屬模具中，依金屬模具溫度175℃、注入壓力6.9MPa、硬化時間120秒之條件注入半導體密封用環氧樹脂組成物，測定流動長。單位為cm。若為80cm以下，則有產生封裝未填充等成形不良的情形。
(半導體封裝之評估)
填充性：使用低壓轉移自動成形機(第一精工製，GP-ELF)，依金屬模具溫度175℃、注入壓力9.8MPa、硬化時間70秒之條件，藉半導體密封用環氧樹脂組成物對矽晶片等進行密封，得到表1記載之評估封裝。藉超音波探傷裝置(日立建機FineTech股份有限公司製，mi-scope hyper II)觀察半導體密封用環氧樹脂組成物之填充性。將間隔件周邊部中第1段與第2段之晶片間的空隙部(間隙)之積層方向之厚度中的最薄厚度，設為最薄填充厚度。於此，最薄填充厚度相當於間隔件厚度。將間隔件周邊部之第1段與第2段之晶片間的空隙部(間隙)中有未填充部者視為不良。評估之封裝數為20個。在不良封裝個數為n個時，表示為n/20。
導線流動率：將填充性評估中所使用之封裝以軟X射線透視裝置(SOFTEX(股)製，PRO-TEST100)攝影，針對22條導線測定導線長、流動量(連接了導線端之線與導線的最大距離)。將導線流動率依(流動量)/(導線長)之百分率表示，並示出所測定之22條中的最大值。單位為%。若此值超過5%，則相鄰接之導線彼此接觸的可能性高。
由表1可明白，無機填充材為含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上的實施例1~5，係填充性優越。又，使用了銅製導線之實施例1~3，導線流動率亦優越。
本申請案係主張以平成21年9月8日所申請之日本專利申請特願2009-206535為基礎的優先權，將其所有揭示內容取至於此。
1．．．半導體元件
2．．．接黏劑層
3．．．晶粒座
4．．．導線
5．．．引線部
6．．．硬化體
7．．．間隔件
8、9、10．．．引線框架
11．．．半導體元件
12．．．接黏劑層
100．．．半導體裝置
圖1為針對本發明之半導體裝置的一例，顯示剖面構造的圖。
圖2為針對本發明之半導體裝置的一例，顯示剖面構造的圖。
1．．．半導體元件
2．．．接黏劑層
3．．．晶粒座
4．．．導線
5．．．引線部
6．．．硬化體
7．．．間隔件
10．．．引線框架
11．．．半導體元件
100．．．半導體裝置

Claims (11)

  1. 一種半導體裝置，係於引線框架上積層搭載2個以上之半導體元件，將上述引線框架與上述半導體元件以導線予以電性接合，將上述半導體元件與上述導線與電性接合部藉半導體密封用環氧樹脂組成物之硬化物密封而成者；上述半導體密封用環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)無機填充材；上述(C)無機填充材係含有最薄填充厚度之2/3以下之粒徑的粒子99.9質量%以上；各上述半導體元件係經由接黏劑而彼此接黏。
  2. 如申請專利範圍第1項之半導體裝置，其中，藉由積層上述半導體元件以設置空隙部，於上述空隙部中填充上述半導體密封用環氧樹脂組成物之硬化物，構成具有最薄之上述填充厚度的填充部。
  3. 如申請專利範圍第2項之半導體裝置，其中，上述半導體元件與上述半導體元件之間的上述空隙部、或上述半導體元件與上述引線框架之間的上述空隙部中，積層方向上最薄厚度係相當於最薄之上述填充厚度。
  4. 如申請專利範圍第1至3項中任一項之半導體裝置，其中，上述導線為銅製導線。
  5. 如申請專利範圍第1項之半導體裝置，其係於上述引線框架經由間隔件積層搭載上述半導體元件者，上述(C)無機 填充材係含有上述間隔件厚度之2/3以下之粒徑的粒子99.9質量%以上。
  6. 如申請專利範圍第1項之半導體裝置，其中，上述(C)無機填充材含有二氧化矽。
  7. 如申請專利範圍第1項之半導體裝置，其中，將上述引線框架與上述半導體元件藉上述導線之反向焊接進行電性接合。
  8. 如申請專利範圍第4項之半導體裝置，其中，上述銅製導線之銅純度為99.99質量%以上。
  9. 如申請專利範圍第4項之半導體裝置，其中，上述銅製導線係於其表面具有由含鈀之金屬材料所構成的被覆層。
  10. 如申請專利範圍第9項之半導體裝置，其中，上述被覆層之厚度為0.001μm以上且0.02μm以下。
  11. 如申請專利範圍第5項之半導體裝置，其中，上述間隔件之厚度為0.01mm以上且0.2mm以下。
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JPWO2011030516A1 (ja) 2013-02-04
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WO2011030516A1 (ja) 2011-03-17
US8766420B2 (en) 2014-07-01
TW201123407A (en) 2011-07-01
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CN102576704A (zh) 2012-07-11
MY156085A (en) 2016-01-15

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