TWI611532B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI611532B
TWI611532B TW103120653A TW103120653A TWI611532B TW I611532 B TWI611532 B TW I611532B TW 103120653 A TW103120653 A TW 103120653A TW 103120653 A TW103120653 A TW 103120653A TW I611532 B TWI611532 B TW I611532B
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TW
Taiwan
Prior art keywords
epoxy resin
electrode pad
resin composition
lead
semiconductor device
Prior art date
Application number
TW103120653A
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English (en)
Other versions
TW201517228A (zh
Inventor
Shingo Itoh
伊藤慎吾
Original Assignee
Sumitomo Bakelite Co., Ltd.
住友電木股份有限公司
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Application filed by Sumitomo Bakelite Co., Ltd., 住友電木股份有限公司 filed Critical Sumitomo Bakelite Co., Ltd.
Publication of TW201517228A publication Critical patent/TW201517228A/zh
Application granted granted Critical
Publication of TWI611532B publication Critical patent/TWI611532B/zh

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    • H01L23/495—Lead-frames or other flat leads
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Abstract

半導體裝置(100)具備：具備電極墊(12)之半導體晶片(10)及電連接於電極墊(12)之導線(30)。導線(30)係由主成分為Ag且含有Pd之第1金屬材料構成。電極墊(12)由主成分為Al之第2金屬材料構成。於導線(30)與電極墊(12)之接合部(40)形成有含有Ag、Al及Pd之合金層。

Description

半導體裝置
本發明係關於一種半導體裝置。
半導體晶片例如使用接合線而電連接於導線架或基板。關於接合線之技術已有各種研究，例如列舉之專利文獻1~5中記載者。
專利文獻1中，記載有一種於金、銀或銅之純金屬、金-銀合金、金-銅合金或金-鈀合金之表面分散有添加元素群之氮化物的導線材料。於專利文獻2及3中，記載有一種關於具有銀線及被覆該銀線之金膜之接合線的技術。專利文獻4中，記載有一種含有Au與Bi之Ag接合線。於專利文獻5中，則記載有一種具有以Cu、Au、Ag中之1種以上之元素作為主成分之芯材、及於芯材上以Pd作為主成分之外層的半導體用接合線。
專利文獻1：日本專利特開2008-174779號公報
專利文獻2：日本專利特開2001-196411號公報
專利文獻3：日本專利特開2001-176912號公報
專利文獻4：日本專利特開2012-49198號公報
專利文獻5：國際公開第2010/106851號說明書
半導體晶片之電極墊與基材之連接端子，例如係經由導線而相互電連接。於此種半導體裝置，有時會對設置於半導體晶片且由主成分為Al之金屬材料構成的電極墊接合由主成分為Ag之金屬材料構成的導線。該情形下，有導線與電極墊之間無法獲得良好接合可靠性之情況。
根據本發明，提供一種半導體裝置，其具備：具備電極墊之半導體晶片、及電連接於上述電極墊之導線，上述導線係由主成分為Ag且含有Pd之第1金屬材料構成，上述電極墊係由主成分為Al之第2金屬材料構成，於上述導線與上述電極墊之接合部形成有含有Ag、Al及Pd之合金層。
根據本發明，可提高導線與電極墊之接合可靠性。
10‧‧‧半導體晶片
12‧‧‧電極墊
20‧‧‧基材
22‧‧‧連接端子
24‧‧‧晶片座
30‧‧‧導線(接合線)
30a‧‧‧前端部
32‧‧‧合金層
34‧‧‧導線
40‧‧‧接合部
50‧‧‧保護膜
60‧‧‧密封樹脂
62‧‧‧焊料球
100‧‧‧半導體裝置
上述目的、及其他目的、特徵及優勢，根據以下所述之較佳實施形態、及附加於其之下述圖式可更加清楚。
圖1為表示第一實施形態之半導體裝置俯視圖。
圖2為表示圖1所示之半導體裝置剖面圖。
圖3為圖2所示之接合部放大圖。
圖4為表示圖1所示之半導體裝置第1變形例之俯視圖。
圖5為表示圖1所示之半導體裝置第2變形例之剖面圖。
以下使用圖式對實施形態進行說明。再者，於所有圖式中，對相同之構成要素附予相同之元件符號以適當省略說明。
圖1為表示本實施形態之半導體裝置100之俯視圖。圖2為表示圖1所示之半導體裝置100之剖面圖。
本實施形態之半導體裝置100具備：半導體晶片10及導線30。半導體晶片10具備電極墊12。導線30電連接於電極墊12。導線30係由主成分為Ag且含有Pd之第1金屬材料構成。電極墊12係由主成分為Al之第2金屬材料構成。導線30與電極墊12之接合部40形成有含有Ag、Al及Pd之合金層或含有Ag、Al、Pd及Au之合金層。
根據本實施形態，在由主成分為Ag且含有Pd之第1金屬材料構成之導線30與由主成分為Al之第2金屬材料構成之電極墊12的接合部40，形成有含有Ag、Al及Pd之合金層或含有Ag、Al、Pd及Au之合金層。本發明者發現：於此種情形時，可實現耐濕可靠性或高溫保存特性等之平衡優異的接合部40。藉此，可提高導線30與電極墊12間之接合可靠性。
以下詳細說明本實施形態的半導體裝置100之構成及半導體裝置100之製造方法。
本實施形態之半導體裝置100具備：基材20及搭載於基材20上之半導體晶片10。基材20與半導體晶片10係經由導線30(接合線) 而相互電連接。圖1中，半導體裝置100例如構成基材20上搭載有半導體晶片10之半導體封裝。
圖1所示之例，揭示於基材20上搭載有一半導體晶片10之情形。另一方面，本實施形態之半導體裝置100例如亦可具備相互積層於基材20上之複數個半導體晶片10。該情形下，各半導體晶片10例如分別經由導線30而電連接於基材20。
基材20只要能被業者辨別為可搭載半導體晶片之構件，則無特別限定，例如內插器或母板等配線基板、導線架、其他半導體晶片等。
圖1及圖2例示有基材20為內插器之情形。該情形下，基材20中與搭載半導體晶片10之一面相反之另一面，設置有複數個焊料球62。具備基材20及半導體晶片10之半導體裝置100例如係經由焊料球62而搭載於另一配線基板上。
基材20具備連接端子22。導線30之一端接合於連接端子22之表面部分。
連接端子22例如係設置於基材20中之搭載半導體晶片10之一面上。於基材20之一面上，例如設置有複數個連接端子22。該情形下，複數個連接端子22例如係沿著半導體晶片10之外緣而設置。圖1所示之例中，連接端子22係設置於構成內插器之基材20上的電極墊。
連接端子22中之至少表面部分例如係由主成分為Au之材料構成。
又，於基材20為導線架之情形時，連接端子22之表面部分例如係由Ag或依序積層有Ni層、Pd層、及Au層之積層膜構成。
基材20上搭載有半導體晶片10。半導體晶片10，例如可列舉：積體電路、大規模積體電路及固體攝像元件。半導體晶片10例如係經由膜狀或糊狀之晶粒黏著材料而接著於基材20之一面上。
半導體晶片10具備電極墊12。導線30中與接合於連接端子22之一端為相反側之另一端，係接合於電極墊12之表面部分。
電極墊12例如係設置於半導體晶片10中與基材20相對向之一面為相反側之另一面上。於半導體晶片10之另一面上，例如設置有複數個電極墊12。於該情形時，複數個電極墊12例如係沿著半導體晶片10之外緣設置。
電極墊12由主成分為Al之第2金屬材料構成。於該情形時，電極墊12中與導線30接合之表面部分，變成由第2金屬材料構成。本實施形態中，構成電極墊12之第2金屬材料除含Al以外，亦可含有Ni、Au、Pd、Ag、Cu、Si或Pt等其他金屬材料。
本實施形態中，構成電極墊12之第2金屬材料中之Al含量，例如為90重量%以上且100重量%以下。
導線30係電連接於連接端子22及電極墊12。本實施形態中，例如導線30中之一端接合於連接端子22，與該一端相反之另一端接合於電極墊12。於導線30之前端部30a與電極墊12之間，形成接合此等而成之接合部40。圖1所示之例中，於半導體晶片10設置有複數個電極墊12，於基材20設置有複數個連接端子22。於該情形時，設置有使各電極墊12與各連接端子22相互電連接之複數個導線30。
於本實施形態中，導線30之直徑例如為15μm以上且25μm以下，尤佳為18μm以上且20μm以下。
導線30係由主成分為Ag且含有Pd之第1金屬材料構成。於該情形時，導線30中與電極墊12接合之前端部30a係由第1金屬材料構成。本實施形態中，構成導線30之第1金屬材料除含Ag及Pd以外，例如亦可含有Au。藉此可更有效地提高接合部40之耐濕可靠性。
構成導線30之第1金屬材料中的Ag含量，較佳為85重量%以上且99.5重量%以下，更佳為85質量%以上且96質量%以下。藉此，可降低製造成本且更有效地提高接合部40之耐濕可靠性及高溫保存特性，提高導線30與電極墊12間之接合可靠性。
又，構成導線30之第1金屬材料中的Pd含量較佳為0.5重量%以上且15重量%以下，更佳為2重量%以上且10重量%以下，再更佳為3重量%以上且6重量%以下。藉此，可抑制製造成本之增加且更有效地提高耐濕可靠性或高溫保存特性。又於第1金屬材料中含有Au之情形時，第1金屬材料中之Au含量例如大於0重量%且為10重量%以下，更佳為2重量%以上且10重量%以下。藉此，可提高導線30之接合性。然而，於Ag含量為94重量%以上之情形時，亦可不使用Au。
圖3為圖2所示之接合部40放大圖。如圖3所示，於半導體晶片10之另一面上，例如形成有由聚醯亞胺等構成之保護膜50。於保護膜50，以使電極墊12之表面露出之方式設置有開口。
於導線30與電極墊12之接合部40，形成有含有Ag、Al及Pd之合金層32。藉此，可實現耐濕可靠性或高溫保存特性等之平衡性優異的接合部40。含有Ag、Al及Pd之合金層32，例如可藉由分別適當地控制構成導線30之第1金屬材料之組成、構成電極墊12之第2金屬材料之組成、 及導線30與電極墊12之接合方法而形成。
合金層32內之Ag、Al及Pd的組成比，例如亦可於合金層32內所含之各區域中相互不同。本實施形態之合金層32，例如係以下述方式設置：與位於電極墊12側之另一端部相比，在位於導線30側之一端部Ag及Pd之組成比較高且Al之組成比較低。再者，本實施形態中之合金層32亦可具有在位於電極墊12側之另一端部不含Pd之區域，但較佳為不具有該區域。
又於構成導線30之第1金屬材料中含有Au之情形時，本實施形態中之合金層32例如係以下述方式設置：與位於電極墊12側之另一端部相比，在位於上述導線30側之一端部Ag、Pd及Au之組成比較高且Al之組成比較低。
於本實施形態中，導線30與電極墊12成為經由形成於接合部40之含有Ag、Al及Pd或Ag、Al、Pd及Au之合金層32而相互接合。
於圖3所示之例中，合金層32係於導線30中與電極墊12接合之端面被設置為層狀或島狀。此時，導線30中與電極墊12接合之端面係與前端部30a之底面一致。再者，合金層32之形狀並不限定於此，可設為各種形狀。
半導體晶片10及導線30例如係利用由環氧樹脂組成物之硬化物構成之密封樹脂60而密封。於該情形時，關於導線30與電極墊12之接合部40，亦成為由上述環氧樹脂組成物之硬化物密封。
將半導體晶片10及導線30密封的環氧樹脂組成物之硬化物例如亦可含有有機硫化合物。於該情形時，可使環氧樹脂組成物之硬化物對於半導體晶片10與由主成分為Ag之第1金屬材料構成之導線30的密接性為良好。因此，可抑制由環氧樹脂組成物之硬化物構成之密封樹脂60與 半導體晶片10及導線30之間的剝離等。
源自環氧樹脂組成物之硬化物中的有機硫化合物之硫含量，例如較佳為1ppm以上且400ppm以下。此處，將環氧樹脂組成物之硬化物中之硫含量設為源自有機硫化合物之硫含量。硫含量例如係以如下方式進行定量。首先，秤取環氧樹脂組成物之硬化物約5mg，使其於內部充滿氧氣之燒瓶內燃燒，並使5%氫氧化鉀溶液吸收所產生之燃燒氣體。繼而，將由離子層析法所測得之5%氫氧化鉀溶液中之硫酸根離子量換算為環氧樹脂組成物中之硫含量。
藉由將硫含量設為1ppm以上，可有效地提高上述環氧樹脂組成物之硬化物對於導線30或半導體晶片10之密合性。又，藉由將硫含量設為400ppm以下，可提高由環氧樹脂組成物之硬化物所密封之接合部40的高溫保存特性。再者，環氧樹脂組成物之硬化物中的硫含量，可藉由分別適當地控制構成環氧樹脂組成物之成分或製備方法而進行調整。
密封半導體晶片10及導線30之環氧樹脂組成物之硬化物其pH例如較佳為4以上且7以下，更佳為4.5以上且6.5以下。於該情形時，可抑制接合部40被該環氧樹脂組成物之硬化物腐蝕。因此，可提高導線30與電極墊12之間之接合可靠性。
再者，環氧樹脂組成物之硬化物的pH，係藉由分別適當地控制構成環氧樹脂組成物之成分或製備方法而進行調整。
以下，詳細說明構成密封樹脂60之環氧樹脂組成物。環氧樹脂組成物含有(A)環氧樹脂、及(B)硬化劑。
((A)環氧樹脂)
作為環氧樹脂組成物中所含之(A)環氧樹脂，可使用於一分子內具有2個以上環氧基之單體、低聚物、聚合物全部，其分子量或分子結構並無特別限定。
於本實施形態中，作為(A)環氧樹脂，例如可列舉：聯苯型環氧樹脂；雙酚A型環氧樹脂、雙酚F型環氧樹脂、四甲基雙酚F型環氧樹脂等雙酚型環氧樹脂；茋型環氧樹脂；苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂；三苯酚甲烷型環氧樹脂、烷基改質三苯酚甲烷型環氧樹脂等多官能環氧樹脂；具有伸苯基骨架之苯酚芳烷基型環氧樹脂、具有伸聯苯基骨架之苯酚芳烷基型環氧樹脂等芳烷基型環氧樹脂；二羥基萘型環氧樹脂、使二羥基萘之二聚物縮水甘油醚化所獲得之環氧樹脂等萘酚型環氧樹脂；異氰尿酸三縮水甘油酯、異氰尿酸單烯丙基二縮水甘油酯等含三
Figure TWI611532BD00001
核之環氧樹脂；二環戊二烯改質苯酚型環氧樹脂等橋接環狀烴化合物改質苯酚型環氧樹脂，該等可單獨使用1種，亦可併用2種以上。該等之中，較佳為聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、及四甲基雙酚F型環氧樹脂等雙酚型環氧樹脂、以及茋型環氧樹脂具有結晶性者。
作為環氧樹脂(A)，尤佳使用含有選自由下述式(1)所表示之環氧樹脂、下述式(2)所表示之環氧樹脂、及下述式(3)表示之環氧樹脂所組成之群中的至少1種者。
Figure TWI611532BD00002
式(1)中，Ar1表示伸苯基或伸萘基，於Ar1為伸萘基之情形時，縮水甘油醚基可鍵結於α位、β位中之任一者。Ar2表示伸苯基、伸聯苯基或伸萘基中之任一基。R5及R6分別獨立表示碳數1~10之烴基。g為0~5之整數，h為0~8之整數。n3表示聚合度，其平均值為1~3。
Figure TWI611532BD00003
式(2)中，所存在之複數個R9分別獨立表示氫原子或碳數1~4之烴基。n5表示聚合度，其平均值為0~4。
Figure TWI611532BD00004
式(3)中，所存在之複數個R10及R11分別獨立表示氫原子或碳數1~4之烴基。n6表示聚合度，其平均值為0~4。
(A)環氧樹脂之含量相對於環氧樹脂組成物整體，較佳為3質量%以上，更佳為5質量%以上，進而較佳為8質量%以上。藉此，可抑 制因環氧樹脂組成物之黏度上升所致之導線斷開。又，環氧樹脂(A)之含量相對於環氧樹脂組成物整體，較佳為18質量%以下，更佳為13質量%以下，進而較佳為11質量%以下。藉此，可抑制由吸水率增加所致之耐濕可靠性下降等。
((B)硬化劑)
作為環氧樹脂組成物中所含之(B)硬化劑，例如可大致分為加成聚合型硬化劑、觸媒型硬化劑、及縮合型硬化劑3種類型。
作為(B)硬化劑所使用之加成聚合型硬化劑，例如可列舉：包含二伸乙基三胺(DETA)、三伸乙基四胺(TETA)、間苯二甲胺(MXDA)等脂肪族聚胺，二胺基二苯甲烷(DDM)、間苯二胺(MPDA)、二胺基二苯基碸(DDS)等芳香族聚胺，此外包含二氰二胺(DICY)、有機酸二醯肼等之聚胺化合物；包含六氫鄰苯二甲酸酐(HHPA)、甲基四氫鄰苯二甲酸酐(MTHPA)等脂環族酸酐，偏苯三甲酸酐(TMA)、均苯四甲酸二酐(PMDA)、二苯甲酮四羧酸二酐(BTDA)等芳香族酸酐等之酸酐；酚醛清漆型酚樹脂、聚乙烯基苯酚等酚樹脂系硬化劑；多硫化物、硫酯、硫醚等聚硫醇化合物；異氰酸酯預聚物、封阻化異氰酸酯(blocked isocyanate)等異氰酸酯化合物；含羧酸之聚酯樹脂等有機酸類等。
(B)硬化劑所使用之觸媒型硬化劑，例如可列舉：二甲苄胺(BDMA)、2,4,6-三-二甲基胺基甲基苯酚(DMP-30)等三級胺化合物；2-甲基咪唑、2-乙基-4-甲基咪唑(EMI24)等咪唑化合物；BF3錯合物等路易士酸等。
(B)硬化劑所使用之縮合型硬化劑，例如可列舉：可溶酚 醛型酚樹脂；如含羥甲基之脲樹脂之類的脲樹脂；如含羥甲基之三聚氰胺樹脂之類的三聚氰胺樹脂等。
該等之中，就提高耐燃性、耐濕性、電子特性、硬化性、及保存穩定性等之平衡的觀點而言，較佳為酚樹脂系硬化劑。作為酚樹脂系硬化劑，可使用於一分子內具有2個以上酚性羥基之單體、低聚物、聚合物全部，其分子量、分子結構並無特別限定。
(B)硬化劑所使用之酚樹脂系硬化劑，例如可列舉：苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚酚醛清漆等酚醛清漆型樹脂；聚乙烯基苯酚；三苯酚甲烷型酚樹脂等多官能型酚樹脂；萜烯改質酚樹脂、二環戊二烯改質酚樹脂等改質酚樹脂；具有伸苯基骨架及/或伸聯苯基骨架之苯酚芳烷基樹脂、具有伸苯基及/或伸聯苯基骨架之萘酚芳烷基樹脂等芳烷基型樹脂；雙酚A、雙酚F等雙酚化合物等，該等可單獨使用1種，亦可併用2種以上。
(B)硬化劑，尤佳使用選自由下述式(4)表示之化合物所組成之群中的至少1種硬化劑。
Figure TWI611532BD00005
式(4)中，Ar3表示伸苯基或伸萘基，於Ar3為伸萘基之情形時，羥基可鍵結於α位、β位中任一者。Ar4表示伸苯基、伸聯苯基或伸萘基中任一基。R7及R8分別獨立表示碳數1~10之烴基。i為0~5之整數， j為0~8之整數。n4表示聚合度，其平均值為1~3。
(B)硬化劑之含量相對於環氧樹脂組成物整體，較佳為2質量%以上，更佳為3質量%以上，進而較佳為6質量%以上。藉此，可獲得具有充分之流動性之環氧樹脂組成物。又，(B)硬化劑之含量相對於環氧樹脂組成物整體，較佳為15質量%以下，更佳為11質量%以下，進而較佳為8質量%以下。藉此，可減少引起由吸水率增加所致之耐濕可靠性下降等之虞。
於使用酚樹脂系硬化劑作為(B)硬化劑之情形時的(A)環氧樹脂與作為酚樹脂系硬化劑之(B)硬化劑之摻合比率，較佳將為全部環氧樹脂之環氧基數(EP)與全部酚樹脂系硬化劑之酚性羥基數(OH)之當量比(EP)/(OH)為0.8以上且1.3以下。藉由將當量比設為上述範圍，可抑制環氧樹脂組成物之硬化性降低或環氧樹脂硬化物之物性降低等。
環氧樹脂組成物中，亦可視需要分別含有(C)填充材料、(D)中和劑、(E)硬化促進劑、或(F)有機硫化合物。
((C)填充材料)
(C)填充材料，可使用一般用於半導體密封用環氧樹脂組成物者，例如可列舉：熔融球狀二氧化矽、熔融破碎二氧化矽、結晶二氧化矽、滑石、氧化鋁、鈦白、氮化矽等無機填充材料，有機聚矽氧粉末、聚乙烯粉末等有機填充材料。該等之中，尤佳為使用熔融球狀二氧化矽。該等填充材料可單獨使用1種，亦可併用2種以上。
作為(C)填充材料之形狀，就抑制環氧樹脂組成物之熔融黏度上升，且提高填充材料之含量之觀點而言，較佳儘可能為圓球狀且粒 度分佈寬廣。又(C)填充材料亦可藉偶合劑進行表面處理。進而，亦可視需要使用環氧樹脂或酚樹脂等預先對(C)填充材料進行處理而使用。此時之處理方法，有使用溶劑進行混合後將溶劑去除之方法、或直接添加於填充材料並使用混合機進行混合處理之方法等。
關於(C)填充材料之含量，就環氧樹脂組成物之填充性、半導體裝置之可靠性之觀點而言，相對於環氧樹脂組成物整體，較佳為65質量%以上，更佳為75質量%以上，進而較佳為80質量%以上。藉此，可提高低吸濕性及低熱膨脹性，使耐濕可靠性良好。又，關於(C)填充材料之含量，就提高成形性之觀點而言，相對於環氧樹脂組成物整體，較佳為93質量%以下，更佳為91質量%以下，進而較佳為86質量%以下。藉此，可降低流動性下降而於成形時產生填充不良等，或產生由高黏度化所致之半導體裝置內之導線流動等不良情況之虞。
((D)中和劑)
(D)中和劑，可使用中和環氧樹脂組成物或作為其硬化物之密封樹脂60於加熱時產生之酸性腐蝕性氣體者。藉此，可抑制導線30與半導體晶片10之電極墊12的接合部40腐蝕(氧化劣化)。(D)中和劑例如可使用鹼性金屬鹽，尤其是選自由含有鈣元素之化合物、含有鋁元素之化合物及含有鎂元素之化合物組成之群中的至少1種。
(D)中和劑所使用之含有鈣元素之化合物，可列舉：碳酸鈣、硼酸鈣、偏矽酸鈣等。該等之中，就雜質之含量、耐水性及低吸水率之觀點而言，較佳為碳酸鈣，更佳為藉二氧化碳反應法所合成之沈澱性碳酸鈣。
(D)中和劑所使用之含有鋁元素之化合物，可列舉：氫氧化鋁、水鋁土等。該等之中，較佳為氫氧化鋁。又，(D)中和劑所使用之氫氧化鋁，更佳為藉由2階段拜耳法所合成之低鈉氫氧化鋁。
(D)中和劑所使用之含有鎂元素之化合物，可列舉：水滑石、氧化鎂、碳酸鎂等。該等之中，就雜質含量及低吸水率之觀點而言，尤佳使用下述式(5)所表示之水滑石。
MaAlb(OH)2a+3b-2c(CO3)c．mH2O (5)
(式(5)中，M表示至少包含Mg之金屬元素；a、b、c分別為滿足2≦a≦8、1≦b≦3、0.5≦c≦2之數，m為0以上之整數)
作為(D)中和劑所使用之水滑石，例如可列舉：Mg6Al2(OH)16(CO3)．mH2O、Mg3ZnAl2(OH)12(CO3)．mH2O、Mg4.3Al2(OH)12.6(CO3)．mH2O等。
(D)中和劑之含量，較佳相對於環氧樹脂組成物整體，在0.01質量%以上且10質量%以下。藉由將(D)中和劑含量設為0.01質量%以上，可充分地發揮(D)中和劑之添加效果，可更確實地防止導線30與電極墊12之接合部40之腐蝕(氧化劣化)，提高半導體裝置100之高溫保存特性。又，藉由將(D)中和劑之含量設為10質量%以下，由於可降低吸濕率，故而有提高耐焊裂性之傾向。尤其於使用碳酸鈣或水滑石作為抗腐蝕劑之情形時，就與上述相同之觀點而言，其含量更佳相對於環氧樹脂組成物整體，在0.05質量%以上且2質量%以下。
((E)硬化促進劑)
(E)硬化促進劑只要為促進(A)環氧樹脂之環氧基與(B)硬化劑(例 如酚樹脂系硬化劑之酚性羥基)之交聯反應者即可，可使用通常用於半導體密封用環氧樹脂組成物者。(E)硬化促進劑，例如可列舉：有機膦、四取代鏻化合物、磷酸酯甜菜鹼化合物、膦化合物與醌化合物之加成物、鏻化合物與矽烷化合物之加成物等含磷原子之化合物；例示出1,8-二氮雙環(5,4,0)十一烯-7、二甲苄胺、2-甲基咪唑等之脒或三級胺、甚或上述脒、胺之四級鹽等含氮原子之化合物等，該等可單獨使用1種，亦可併用2種以上。
(E)硬化促進劑之含量相對於環氧樹脂組成物整體，較佳為0.05質量%以上，更佳為0.1質量%以上。藉此，可抑制硬化性降低。又，(E)硬化促進劑之含量相對於環氧樹脂組成物整體，較佳為1質量%以下，更佳為0.5質量%以下。藉此可抑制流動性降低。
((F)有機硫化合物)
(F)有機硫化合物係於一分子中含有1個以上硫原子之化合物。藉由使環氧樹脂組成物含有(F)有機硫化合物，可提高環氧樹脂組成物對於半導體晶片10及導線30之密合性。(F)有機硫化合物，例如可列舉：3-巰丙基三甲氧基矽烷等巰基矽烷化合物或3-胺基-5-巰基-1,2,4-三唑等具有三唑骨架之巰基化合物、反式-4,5-二羥基-1,2-二噻烷等二噻烷系化合物、2-(甲硫基)-2-噻唑啉系化合物、2-巰基苯并噻唑等苯并噻唑系化合物、2-巰基乙醇、3-巰基-1,2-丙二醇等含巰基之醇，該等可單獨使用1種，亦可併用2種以上。
該等之中，尤佳使用3-巰丙基三甲氧基矽烷等巰基矽烷化合物作為(F)有機硫化合物。藉此，可實現對半導體晶片10或導線30之密合性及 高溫保存特性之平衡性優異的環氧樹脂組成物。再者，3-巰丙基三甲氧基矽烷等巰基矽烷化合物亦具有偶合劑功能。
(F)有機硫化合物之含量相對於環氧樹脂組成物整體，較佳為0.05質量%以上且1質量%以下，尤佳為0.1質量%以上且0.5質量%以下。藉此，可使環氧樹脂組成物之硬化物中的硫含量為適合用以實現密接性及高溫保管特性之平衡性優異的環氧樹脂組成物者。
於構成密封樹脂60之環氧樹脂組成物，亦可進一步視需要適當摻合以下各種添加劑：氫氧化鋯等抗鋁腐蝕劑；氧化鉍水合物等無機離子交換體；γ-縮水甘油氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、環氧矽烷等偶合劑；碳黑、紅鐵粉等著色劑；聚矽氧橡膠等低應力成分；巴西棕櫚蠟等天然蠟、合成蠟、硬脂酸鋅等高級脂肪酸及其金屬鹽類或石蠟等脫模劑；氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷氮烯等阻燃劑、抗氧化劑等。
構成密封樹脂60之環氧樹脂組成物，例如可使用將上述各成分利用攪拌器等以15℃~28℃混合而成者或進而利用輥、捏合機或擠壓機等混練機進行熔融混練，冷卻後進行粉碎而成者等視需要適當調整分散度或流動性等而成者。
圖4係表示圖1所示之半導體裝置100的第1變形例之俯視圖。
於本變形例中，基材20係包含搭載半導體晶片10之晶片座24及內導線的導線架。於該情形時，設置於基材20之連接端子22例如由內導線構成。因此，接合線30會將設置於半導體晶片10之電極12及由內導線構成之連 接端子22相互連接。
於本實施形態中，基材20例如由Cu合金或42合金構成。又，連接端子22其表面部分例如係由Ag或依序積層有Ni層、Pd層、Au層之積層膜構成。於該情形時，可於接合線30與連接端子22之間實現較高的接合可靠性。
圖5係表示圖1所示之半導體裝置100的第2變形例之剖面圖。
本變形例中，於基材20上相互積層複數個半導體晶片10。複數個半導體晶片10中任意兩個半導體晶片10之間，例如藉由導線34而相互電連接。即，導線34連接一半導體晶片10之電極墊12及另一半導體晶片10之電極墊12。導線34例如可具有與導線30相同之構成。
於導線34與電極墊12之接合部形成含有Ag、Al及Pd之合金層。設置於導線34與電極墊12之接合部的合金層，具有與上述設置於導線30與電極墊12之接合部之合金層32相同的構成。於該情形時，亦可實現於連接相互積層之二個半導體晶片10之導線34與連接於導線34之電極墊12之間耐濕可靠性及高溫保管特性等之平衡性優異的接合部。
於圖5中，例示有於基材20上積層兩個半導體晶片10之情形。再者，本變形例之半導體裝置100的構成並不限定於圖5所示者。於本變形例中，例如可將任意個數之半導體晶片10積層於基材20上。
繼而，說明本實施形態之半導體裝置100製造方法之一例。
首先，準備具備電極墊12之半導體晶片10。半導體晶片10例如可藉由在形成有電晶體等元件之晶圓上形成多層配線層後，切割該晶圓單片化 成各半導體晶片10而獲得。
繼而，於具備連接端子22之基材20上搭載半導體晶片10。此處，半導體晶片10配置於基材20中未設置連接端子22之區域上。於本實施形態中，例如經由設置於基材20上之晶粒黏著材料，而將半導體晶片10搭載於基材20上。
繼而，將半導體晶片10之電極墊12與基材20之連接端子22藉由導線30進行導線接合。藉此，使電極墊12與連接端子22電連接。關於上述導線接合，例如以業者使用Au導線進行導線接合之一般條件為基礎，於氮氣、氬氣或氦氣等惰性氣體環境下進行。又，接合裝置，例如可使用Cu導線用之接合裝置等。
繼而，以環氧樹脂組成物密封半導體晶片10及導線30。環氧樹脂組成物例如使用轉移模具、壓縮模具、或注塑模具等之成形方法而硬化成形。
繼而，於80℃~200℃左右之溫度，對環氧樹脂組成物歷時10分鐘~24小時左右之時間進行後硬化。藉此，形成由環氧樹脂組成物之硬化物構成之密封樹脂60。上述後硬化尤佳於150℃~200℃、2~16小時之條件下進行。
根據本實施形態，例如以此種方式形成半導體裝置100。
以上，根據本實施形態，於由主成分為Ag且含有Pd之第1金屬材料構成之導線30與由主成分為Al之第2金屬材料構成之電極墊12的接合部40，形成含有Ag、Al及Pd之合金層。藉此，可提高導線與電極墊之間之接合可靠性。
[實施例]
繼而，對本發明之實施例進行說明。
(環氧樹脂組成物之調整)
對製造例1~3之各例，以如下方式調整環氧樹脂組成物。
首先，使用攪拌器將根據表1所摻合之各成分於15~28℃下進行混合。繼而，將所獲得之混合物於70~100℃下進行滾動混練。繼而，冷卻混練後之混合物並進行粉碎而獲得環氧樹脂組成物。再者，表1中之各成分之詳細內容如下所述。又，表1中之單位為質量%。
(A)環氧樹脂
EP-BA(具有伸聯苯基骨架之苯酚芳烷基型環氧樹脂)：NC3000P，日本化藥(股)製造，環氧當量276，Cl離子濃度280ppm
(B)硬化劑
HD-BA(具有伸聯苯基骨架之苯酚芳烷基樹脂)：MEH-7851SS，明和化成(股)製造，羥基當量203
(C)填充材料
二氧化矽：FB-820，電氣化學工業(股)製造，平均粒徑26.5μm，105μm以上之粒子1%以下
(D)中和劑
水滑石：DHT-4A(註冊商標)(上述式(5)中，a為4.3、b為2、c為1之水滑石)協和化學工業(股)製造
(E)硬化促進劑
三苯基膦(TPP)，北興化學工業(股)製造
(F)有機硫化合物
化合物1：3-巰丙基三甲氧基矽烷
化合物2：3-胺基-5-巰基-1,2,4-三唑
(G)其他成分
偶合劑：環氧矽烷
著色劑：碳黑
脫模劑：巴西棕櫚蠟
(螺旋流動)
使用低壓轉移成形機(Kohtaki Precision Machine(股)製造之「KTS-15」)將製造例1~3之環氧樹脂組成物於模具溫度175℃、注入壓力6.9MPa、硬化時間120秒之條件下分別注入基於EMMI-1-66之螺旋流動測定用金屬模具中，測定流動長度。表1中之單位為cm。
(凝膠時間)
分別將製造例1~3之環氧樹脂組成物於加熱至175℃之熱板上熔融後，一面利用刮勺進行混練一面測定直至硬化為止之時間。表1中之單位為秒。
(pH之測定)
使用低壓轉移成形機(Kohtaki Precision Machine(股)製造之「KTS-15」)將製造例1~3之環氧樹脂組成物之硬化物於金屬模具溫度175℃、注入壓力7.5MPa、硬化時間2分鐘之條件下進行成形，獲得50mm
Figure TWI611532BD00006
×3mm之試片。繼而，將所獲得之試片於175℃、4小時之條件下進行後硬化，其後進行微粉碎，獲得粉碎品。繼而，添加50ml之蒸餾水至5g之粉碎品， 放入至經Teflon(註冊商標)襯裏之容器中，於125℃下進行20小時之處理，獲得萃取液。使用pH計測定萃取液之pH。
(硫含量之測定)
秤取製造例1~3之環氧樹脂組成物之硬化物約5mg，使其於內部充滿氧氣之燒瓶內燃燒。使5%氫氧化鉀溶液吸收藉此產生之燃燒氣體。自藉由離子層析法所測得之5%氫氧化鉀溶液中之硫酸根離子量，換算為環氧樹脂組成物中之硫含量。表1中之單位為ppm。
Figure TWI611532BD00007
(半導體裝置之製作)
對於實施例1~7、比較例1~2之各例，以如下方式製作半導體裝置。
將具備由Al純度95.0%(Cu 5.0%)之金屬材料構成之電極墊的TEG(Test Element Group，測試元件組)晶片(3.5mm×3.5mm)搭載於352接腳BGA(Ball Grid Array，球柵陣列)(基板為厚度0.56mm、雙馬來亞醯胺-三
Figure TWI611532BD00008
樹脂/玻璃纖維布基板，封裝尺寸為30mm×30mm、厚度1.17mm)上。繼而，使用根據表2及3之金屬材料構成之導線將TEG晶片之電極墊(以下記作電極墊)、及BGA基板之連接端子(以下記作連接端子)以導線間距80μm進行導線接合。
將藉此獲得之結構體以低壓轉移成形機(TOWA製造之「Y Series」)於金屬模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘之條件下，使用根據表2及3之製造例所獲得之環氧樹脂組成物進行密封成形，製作352 接腳BGA封裝。其後，將所獲得之BGA封裝於175℃、4小時之條件下進行後硬化，獲得半導體裝置。
(TEM分析)
對於實施例1~7、比較例1~2之各例，將獲得之半導體裝置以175℃、16小時、大氣中之條件進行加熱後，使用穿透式電子顯微鏡(TEM)分析導線與電極墊之接合部的構造。
於實施例1~7之半導體裝置中，於導線與電極墊之接合部觀察到含有Ag、Al及Pd之合金層。另一方面，於比較例1~2之半導體裝置中，未於導線與電極墊之接合部觀察到含有Ag、Al及Pd之合金層。
(耐濕可靠性)
對於實施例1~7、比較例1~2之半導體裝置，進行HAST(不飽和耐濕性試驗)(Highly Accelerated Stress Test，強加速應力測試)。HAST係依據IEC68-2-66，於溫度130℃、濕度85%RH、施加電壓20V、96小時之試驗條件下進行。對試驗後之半導體裝置，測定導線與電極墊之間之電阻值，將顯示出相對於初期電阻值未達110%之電阻值者設為◎，將顯示出110%以上且120%以下之電阻值者設為○，將顯示出大於120%之電阻值者設為×。
(高溫保存特性)
對於實施例1~7、比較例1~2之半導體裝置，進行HTSL(高溫保存試驗)(High Temperature Storage Life Test，高溫保存壽命試驗)。HTSL係於溫度185℃、1000小時之試驗條件下進行。對試驗後之半導體裝置，測定導線與電極墊之間之電阻值，將顯示出相對於初期電阻值未達110%之電阻值者設為◎，將顯示出110%以上且120%以下之電阻值者設為○，將顯示出大 於120%之電阻值者設為×。
(密合性)
對於實施例1~7、比較例1~2之各例，對4個所獲得之半導體裝置於85℃相對濕度85%之環境下處理168小時後，進行IR(infrared radiation，紅外線)回焊處理(260℃)。繼而，利用超音波探傷器觀察處理後之半導體裝置內部，算出密封樹脂自半導體晶片或導線剝離之剝離面積。針對所有半導體裝置，將剝離面積未達5%之情形設為◎，將5%以上且10%以下之情形設為○，將超過10%之情形設為×。
Figure TWI611532BD00009
Figure TWI611532BD00010
如上述，於實施例1~7中，於導線與電極墊之接合部觀察到含有Ag、Al及Pd之合金層。於此種實施例1~7中，高溫保存特性、耐 濕可靠性試驗及密合性均獲得良好之結果。其中，於實施例1、2、3、7中，獲得與其他實施例相比密合性尤其優異之半導體裝置。又於實施例1~6中，獲得與實施例7相比高溫保存特性尤其優異之半導體裝置。進而，於實施例1、2、4、5、7中，獲得與其他實施例相比耐濕可靠性尤其優異之半導體裝置。
本申請案主張基於2013年6月20日提出申請之日本專利申請特願2013-129375之優先權，並將其揭示之全部內容併入於本文中。
10‧‧‧半導體晶片
12‧‧‧電極墊
20‧‧‧基材
22‧‧‧連接端子
30‧‧‧導線(接合線)
30a‧‧‧前端部
40‧‧‧接合部
100‧‧‧半導體裝置

Claims (5)

  1. 一種半導體裝置，其具備：具備電極墊之半導體晶片、及電連接於該電極墊之導線，該導線係由主成分為Ag且含有Pd之第1金屬材料構成，該電極墊係由主成分為Al之第2金屬材料構成，於該導線與該電極墊之接合部形成有含有Ag、Al及Pd之合金層。
  2. 如申請專利範圍第1項之半導體裝置，其中，構成該導線之該第1金屬材料中的Ag含量為85重量%以上且99.5重量%以下。
  3. 如申請專利範圍第1或2項之半導體裝置，其中，該半導體晶片及該導線係藉環氧樹脂組成物之硬化物而密封，該環氧樹脂組成物之硬化物中的硫含量為1ppm以上且400ppm以下。
  4. 如申請專利範圍第3項之半導體裝置，其中，該環氧樹脂組成物之硬化物含有有機硫化合物。
  5. 如申請專利範圍第3項之半導體裝置，其中，該環氧樹脂組成物之硬化物的pH為4以上且7以下。
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CN105308731A (zh) 2016-02-03
JP6341203B2 (ja) 2018-06-13
TW201517228A (zh) 2015-05-01
WO2014203777A1 (ja) 2014-12-24
JPWO2014203777A1 (ja) 2017-02-23
KR102215169B1 (ko) 2021-02-10
CN105308731B (zh) 2019-04-30

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