TWI500648B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI500648B TWI500648B TW099134346A TW99134346A TWI500648B TW I500648 B TWI500648 B TW I500648B TW 099134346 A TW099134346 A TW 099134346A TW 99134346 A TW99134346 A TW 99134346A TW I500648 B TWI500648 B TW I500648B
- Authority
- TW
- Taiwan
- Prior art keywords
- epoxy resin
- semiconductor device
- general formula
- group
- metal hydroxide
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 136
- 239000003822 epoxy resin Substances 0.000 claims description 139
- 229920000647 polyepoxide Polymers 0.000 claims description 139
- 239000000203 mixture Substances 0.000 claims description 78
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 59
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 58
- 150000004692 metal hydroxides Chemical class 0.000 claims description 58
- 239000003566 sealing material Substances 0.000 claims description 42
- 229910052782 aluminium Inorganic materials 0.000 claims description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 239000005011 phenolic resin Substances 0.000 claims description 31
- 238000007789 sealing Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000006104 solid solution Substances 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 23
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 23
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 21
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 239000004848 polyfunctional curative Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 15
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical group [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 125000001624 naphthyl group Chemical group 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 125000005427 anthranyl group Chemical group 0.000 claims description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 7
- 239000003112 inhibitor Substances 0.000 claims description 7
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 claims description 6
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 claims description 6
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 6
- 229960001545 hydrotalcite Drugs 0.000 claims description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 6
- 239000000347 magnesium hydroxide Substances 0.000 claims description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 5
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 claims description 3
- 125000006267 biphenyl group Chemical group 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 125000001033 ether group Chemical group 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 description 29
- -1 gold metals Chemical class 0.000 description 27
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- 238000001721 transfer moulding Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
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- 238000002347 injection Methods 0.000 description 9
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- 238000010521 absorption reaction Methods 0.000 description 8
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- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 7
- 239000011362 coarse particle Substances 0.000 description 7
- 239000004744 fabric Substances 0.000 description 7
- 239000003365 glass fiber Substances 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 7
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- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
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- 150000002500 ions Chemical class 0.000 description 5
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- 230000008018 melting Effects 0.000 description 4
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- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
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- 229920000768 polyamine Polymers 0.000 description 3
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- 229910001415 sodium ion Inorganic materials 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
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- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
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- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 2
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- VTWDKFNVVLAELH-UHFFFAOYSA-N 2-methylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=CC(=O)C=CC1=O VTWDKFNVVLAELH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
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- 229930185605 Bisphenol Natural products 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 2
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Description
本發明係關於半導體裝置。更詳言之,係關於半導體裝置,其具備有:具有晶片墊部之導線架或電路基板;1個以上半導體元件,其係積層或並列搭載於上述導線架的晶片墊部上或上述電路基板上;銅導線,其係將在上述導線架的晶片墊部或上述電路基板上所設置的電氣接合部、與在上述半導體元件上所設置的電極墊,施行電氣接合;以及密封材,其係將上述半導體元件與上述銅導線施行密封。
自習知起,二極體、電晶體、積體電路等電子零件,主要係利用環氧樹脂組成物的硬化物進行密封。特別係積體電路中,有採用經調配入環氧樹脂、酚樹脂系硬化劑、及熔融二氧化矽、結晶二氧化矽等無機填充材,耐熱性及耐濕性均優異的環氧樹脂組成物。但是,近年在電子機器的小型化、輕量化、高性能化之市場動向中,半導體元件的高積體化年年進展,且促進半導體裝置的表面安裝化,半導體元件密封時所使用環氧樹脂組成物的耐熱性及耐濕性之要求已越趨嚴苛。
另一方面,對半導體裝置的成本降低要求亦日益高漲,因為習知金線接合的成本較高,因而亦有採用利用諸如鋁、銅合金、銅等非金金屬進行接合。然而,特別係在汽車用途方面,對非金金屬除要求成本之外,尚亦要求在超過150℃的高溫環境下之高溫保管特性、高溫動作特性,以及在超過60℃、相對濕度60%的高溫‧高濕環境下之耐濕可靠性等之類的電氣可靠性。又,在利用非金線進行的接合中,會有遷移、腐蝕、及電阻值增加的問題,未必能令人滿意。
特別係使用銅導線的半導體裝置中,在耐濕可靠性試驗時會有銅容易遭腐蝕而導致欠缺可靠性的問題。導線線徑較粗的銅導線雖在離散用功率裝置中有實際的使用效果,但導線線徑25μm以下的銅導線在現況下,較難適用於IC用途,特別係受電路基板所引起之雜質影響的單面密封封裝。
專利文獻1有提案藉由改善銅導線自體的加工性而提升接合部的可靠性。又,專利文獻2有提案藉由在銅線上被覆著導電性金屬,而防止銅線的氧化、及改善接合可靠性。但是,針對經樹脂密封的封裝,即半導體裝置自體的腐蝕、耐濕可靠性之類的電氣可靠性並未受考量。
再者,為求封裝的小型薄板化,同時能達生產性提升,統括成形多數個半導體元件,經成形後再裁切分開為單片而獲得各元件的MAP成形,正逐漸成為主流。MAP成形品為能成形較薄且大型成形品,對密封樹脂將要求低黏度化、能承受單片化時之切斷的強度、不會有龜裂缺損的柔軟度、以及對進行裁切之刀片的低磨耗性等。為提升上述封裝可靠性,較佳在密封樹脂中將無機填充材呈高填充化,俾降低吸濕率。但是,因無機填充材的高填充化,會有切削阻力提高、刀片容易磨耗、單片化時會嚙入刀片中導致破損等之類的問題發生。所以,對密封樹脂係要求單片化的容易度、以及對刀片的低磨耗性。
專利文獻1:日本專利特公平6-017554號公報
專利文獻2:日本專利特開2007-12776號公報
本發明係有鑑於上述習知技術所存在的問題而完成,其目的在於提供:具備有導線架或電路基板、半導體元件、銅導線、及密封材的半導體裝置,在依照將上述半導體元件與上述銅導線利用上述密封材用環氧樹脂組成物施行統括密封成形後,將成形品施行裁切而單片化的MAP方式所獲得之半導體裝置中,經密封成形後的單片化容易,裁切時所使用刀片的磨耗少,且將導線架或電路基板的電氣接合部與半導體元件的電極墊施行電氣接合的銅導線不易遭腐蝕,且高溫保管特性、高溫動作特性、耐濕可靠性的均衡優異。
根據本發明,係提供半導體裝置,其具備有:具有晶片墊部之導線架或電路基板,其係具備有電氣接合部;1個以上半導體元件,其係積層或並列搭載於該導線架的該晶片墊部上或該電路基板上,且具備有電極墊;銅導線,其係將該導線架或該電路基板的該電氣接合部、與該半導體元件的該電極墊施行電氣接合;以及密封材,其係將該半導體元件與該銅導線施行密封;其中,該銅導線的線徑係18μm以上、23μm以下;該密封材係由環氧樹脂組成物的硬化物構成;該環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)球狀二氧化矽、(D)金屬氫氧化物及/或金屬氫氧化物固溶體;該半導體裝置係在利用該環氧樹脂組成物施行密封成形後,經由單片化步驟而獲得。
根據本發明一實施形態,上述半導體裝置中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體的平均粒徑係1μm以上、10μm以下。
根據本發明一實施形態,上述半導體裝置中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體,相對於上述環氧樹脂組成物總質量的含有比例,係1質量%以上、10質量%以下。
根據本發明一實施形態,上述半導體裝置中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體係含有20質量%以上結晶水。
根據本發明一實施形態,上述半導體裝置中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體係氫氧化鋁及/或氫氧化鎂。
根據本發明一實施形態,上述半導體裝置中,上述環氧樹脂組成物係更進一步含有從氫氧化鋯、水滑石、水鋁土所構成群組中選擇之1種以上鋁腐蝕防止劑。
根據本發明一實施形態,上述半導體裝置中,上述(C)球狀二氧化矽的眾數直徑係35μm以下,且上述(C)球狀二氧化矽中所含55μm以上的粒子之含有率係0.1質量%以下。
根據本發明一實施形態,上述半導體裝置中,上述環氧樹脂係含有從下述環氧樹脂所構成群組中選擇之至少1種環氧樹脂:
(一般式(1)中,-R1-係伸苯基或伸萘基,當-R1-係伸萘基的情況,環氧丙基醚基的鍵結位置係可為α位、亦可為β位;-R2-係伸苯基、伸聯苯基或伸萘基;R3與R4分別係經導入R1與R2上,且碳數1~10的烴基,該等係可彼此相同亦可不同;a係0~5的整數;b係0~8的整數;n1的平均值係1以上、3以下的正數)所示環氧樹脂;
(一般式(2)中,R5係碳數1~4的烴基,可彼此相同亦可不同;R6係氫原子或碳數1~4的烴基,可彼此相同亦可不同;c與d係0或1的整數,e係0~5的整數)所示環氧樹脂;
(一般式(3)中,R7與R8係氫原子或甲基;n3係0~5的整數)所示環氧樹脂;以及
(一般式(4)中,n4的平均值係0以上、4以下的正數)所示環氧樹脂。
根據本發明一實施形態,上述半導體裝置中,上述硬化劑係含有
(一般式(5)中,-R9-係伸苯基或伸萘基,當-R9-係伸萘基的情況,羥基的鍵結位置係可為α位、亦可為β位;-R10-係伸苯基、伸聯苯基或伸萘基;R11與R12分別係經導入R9、R10上,且碳數1~10的烴基,該等係可彼此相同亦可不同;f係0~5的整數,g係0~8的整數,n5的平均值係1以上、3以下的正數)所示酚樹脂。
根據本發明一實施形態,上述半導體裝置中,上述硬化劑係含有
(一般式(6)中,n6的平均值係0以上、4以下的正數)所示酚樹脂。
若依照本發明,可獲得具備有導線架或電路基板、半導體元件、銅導線、及密封材的半導體裝置,在經將上述半導體元件與上述銅導線利用上述密封材用環氧樹脂組成物施行統括密封成形後,將成形品施行裁切而單片化的MAP方式之半導體裝置中,經密封成形後的單片化容易,施行裁切之刀片的磨耗少,且將導線架或電路基板的電氣接合部與半導體元件的電極墊施行電氣接合的銅導線難以遭腐蝕,高溫保管特性、高溫動作特性、耐濕可靠性的均衡優異。
以下,針對本發明半導體裝置進行詳細說明。
本發明的半導體裝置係具備有:導線架或電路基板、半導體元件、銅導線、及密封材,且係依照將半導體元件與銅導線,利用密封材用環氧樹脂組成物施行統括密封成形後,將成形品施行裁切而單片化的MAP方式所獲得。
圖1係顯示本發明半導體裝置一例之將在電路基板並列搭載的複數半導體元件統括地施行密封成形後,施行單片化的半導體裝置(MAP式BGA),其在統括密封成形後(單片化前)的概略剖面圖。在電路基板6上利用黏晶材硬化體2,並列固定複數個半導體元件1。半導體元件1的電極墊5與電路基板6的電極墊7,係利用銅導線3施行電氣接合。在與電路基板6搭載半導體元件1之面呈相反側的面形成焊錫球8,該焊錫球8係與電路基板6的電極墊7在電路基板6內部進行電氣接合。密封材4係例如利用上述環氧樹脂組成物的硬化物形成,電路基板6僅有複數搭載半導體元件1的單面側利用該密封材4施行統括地密封成形。又,藉由沿切割線9施行切割而單片化。圖1係例示在經單片化後的半導體裝置中,於電路基板6上搭載著1個半導體元件1,但亦可並列或積層搭載著2個以上。
所以,上述藉由單片化所獲得之本發明的半導體裝置,係具備有:具有晶片墊部之導線架或電路基板6,其係具備有屬於電氣接合部之電極墊7;半導體元件1,其係積層或並列搭載於導線架的晶片墊部上或電路基板6上,且具備有電極墊5;銅導線3,其係將導線架或該電路基板6的電極墊7、與半導體元件1的電極墊5施行電氣接合;及密封材4,其係將半導體元件1與銅導線3施行密封。
上述半導體裝置中,銅導線的線徑係18μm以上、23μm以下,密封材係由環氧樹脂組成物的硬化物構成,環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)球狀二氧化矽、(D)金屬氫氧化物及/或金屬氫氧化物固溶體。又,上述半導體裝置係在利用環氧樹脂組成物施行密封成形後,經由單片化步驟而獲得。本發明的半導體裝置係藉由該構造,密封成形後的單片化容易、對進行裁切之刀片的磨耗少、將導線架或電路基板的電氣接合部與半導體元件的電極墊進行電氣接合的銅導線難以遭腐蝕,且高溫保管特性、高溫動作特性、耐濕可靠性的均衡優異。以下,針對各構造進行詳細說明。
首先,針對本發明半導體裝置所使用的銅導線進行說明。在具備有:具有晶片墊部之導線架或電路基板、1個以上的半導體元件(其係積層或並列搭載於導線架的晶片墊部上或電路基板上)、導線(其係將導線架或電路基板的電氣接合部、與半導體元件的電極墊進行電氣接合)、以及密封材(其係將半導體元件與導線予以密封)的半導體裝置中,為求積體度的提升,而要求窄墊間距、小導線徑,具體而言,要求23μm以下、更佳20μm以下的導線徑。為提升當使用銅導線作為導線時,起因於銅導線自身的加工性的接合可靠性,雖亦有考慮藉由加大導線徑而增加接合面積,俾改善因接合不足所造成的耐濕可靠性降低情形,但依此藉由增粗導線徑而進行的改善手法,並無法達到積體度提升,無法獲得能滿足當作單面密封型半導體裝置用者。又,若小於18μm的導線徑,銅導線自身的硬度並無法充分發揮,會引發導線偏移(wire sweep)(亦稱「導線流動」),導致組裝自體較為困難。
本發明半導體裝置所使用的銅導線較佳係23μm以下、更佳係20μm以下的導線徑,且較佳係18μm以上的導線徑。若在該範圍內,銅導線前端的球形狀呈安定,可提升接合部分的接合可靠性。又,可防止因銅導線自身的硬度而造成導線偏移。
本發明半導體裝置所使用的銅導線並無特別限定,較佳係銅純度達99.99質量%以上、更佳係達99.999質量%以上。一般藉由對銅添加各種元素(摻質),便可達接合時的銅導線前端之球側形狀安定化。若添加多於0.01質量%之量的摻質,在導線焊接接合時球部分會變硬,會對半導體元件的電極墊側造成損傷,導致因接合不足而造成之耐濕可靠性降低、高溫保管特性降低、電阻值增加的不良情況發生。相對於此,若為銅純度達99.99質量%以上的銅導線,因為球部分具有充分的柔軟性,因而在接合時不會有對墊側造成損傷之疑虞。又,本發明半導體裝置所使用的銅導線係藉由在屬於芯線的銅中,摻雜入諸如Ba、Ca、Sr、Be、Al或稀土類金屬0.001~0.003質量%,便可更進一步改善球形狀與接合強度。
本發明半導體裝置所使用的銅導線係將銅合金利用熔解爐進行鑄造,再將該鑄塊施行輥軋,再使用模具施行拉線加工,連續施行一邊掃描拉引導線一邊施行加熱的後熱處理便可獲得。
其次,針對本發明半導體裝置所使用的密封材進行說明。本發明半導體裝置所使用的密封材係由含有(A)環氧樹脂、(B)硬化劑、(C)球狀二氧化矽、(D)金屬氫氧化物及/或金屬氫氧化物固溶體的環氧樹脂組成物之硬化物構成。
使用銅導線的半導體裝置係在高溫及高濕環境下,會有電氣接合部遭腐蝕的問題虞慮。因而為求耐濕可靠性的改善,宜降低半導體密封材料中之諸如鈉、氯等之類的離子性雜質。以下,針對構成本發明半導體裝置所使用之密封材的環氧樹脂組成物,就各構成成分進行說明。
本發明半導體裝置所使用的密封材用環氧樹脂組成物,係含有環氧樹脂(A)。本案說明書中,所謂「環氧樹脂(A)」係指1分子內具有2個以上環氧基的單體、寡聚物、聚合物,其分子量、分子構造並無特別限定。環氧樹脂(A)係可舉例如:聯苯型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂等結晶性環氧樹脂;酚酚醛型環氧樹脂、甲酚酚醛型環氧樹脂等酚醛型環氧樹脂;三酚甲烷型環氧樹脂、烷基改質三酚甲烷型環氧樹脂等多官能環氧樹脂;具伸苯基骨架的酚芳烷基型環氧樹脂、具伸聯苯基骨架的酚芳烷基型環氧樹脂等芳烷基型環氧樹脂;二氫蒽二醇型環氧樹脂;將二羥基萘的二聚體施行環氧丙基醚化而獲得的環氧樹脂等萘酚型環氧樹脂;異三聚氰酸三環氧丙酯、異三聚氰酸單烯丙基二環氧丙酯等含有三核之環氧樹脂;二環戊二烯改質酚型環氧樹脂等具橋環狀烴化合物改質酚型環氧樹脂等,該等係可單獨使用1種、亦可併用2種以上。又,使用銅導線的半導體裝置中,從高溫及高濕環境下的電氣接合部之腐蝕觀點,該等環氧樹脂中所含有諸如鈉離子、氯離子之類的離子性雜質量,分別較佳係10ppm以下、更佳係5ppm以下。
再者,環氧樹脂的離子性雜質量係可依如下進行測定。首先,將環氧樹脂5g與蒸餾水50g密閉於鐵氟龍(註冊商標)製耐壓容器中,施行125℃、相對濕度100%RH、20小時的處理(高壓蒸煮處理)。經冷卻至室溫後,將抽出水施行離心分離,並利用20μm過濾器施行過濾,然後使用毛細管電泳裝置(例如大塚電子股份有限公司製CAPI-3300)測定雜質離子濃度。依此所獲得的雜質離子濃度(單位ppm)係將從試料5g中抽出的雜質離子稀釋為10倍的數值,因而依下式換算為樹脂組成物每單位質量的各離子量。單位係ppm。
試料每單位質量的雜質離子=(依毛細管電泳裝置所求得雜質離子濃度)×50÷5
再者,針對後述硬化劑中所含有的離子性雜質量,亦可依照同樣的方法進行測定。
若考慮統括進行密封成形後,再經由單片化的步驟而獲得之半導體裝置的可靠性,因為屬於薄型大型的製品,因而為能防止因翹曲所造成對內建半導體元件的損傷、因對銅導線與元件間之接合部分的應力而造成之可靠性降低,所以特佳係含有從一般式(1)所示環氧樹脂、一般式(2)所示環氧樹脂、一般式(3)所示環氧樹脂、一般式(4)所示環氧樹脂所構成群組中選擇之至少1種環氧樹脂。
(一般式(1)中,-R1-係伸苯基或伸萘基,當-R1-係伸萘基的情況,環氧丙基醚基的鍵結位置係可為α位、亦可為β位;-R2-係伸苯基、伸聯苯基或伸萘基;R3與R4分別係經導入R1與R2上,且碳數1~10的烴基,該等係可彼此相同亦可不同;a係0~5的整數;b係0~8的整數;n1的平均值係1以上、3以下的正數);
(一般式(2)中,R5係碳數1~4的烴基,可彼此相同亦可不同;R6係氫原子或碳數1~4的烴基,可彼此相同亦可不同;c與d係0或1的整數,e係0~5的整數);
(一般式(3)中,R7與R8係氫原子或甲基;n3係0~5的整數);
(一般式(4)中,n4的平均值係0以上、4以下的正數)。
一般式(1)及一般式(4)所示環氧樹脂,具有可獲得熱彈性模數低、低吸濕率之成形品的特徵。藉此,可獲得減低對半導體元件接合部的應力、更進一步提升耐濕可靠性的效果。
因為一般式(2)所示環氧樹脂係分子內具有萘骨架,因而較龐大、且剛直性高,因而具有使用其的環氧樹脂組成物之硬化物係硬化收縮率變小、低翹曲性優異的特徵。藉此,可獲得減低對半導體元件接合部的應力之效果。
再者,因為一般式(3)所示環氧樹脂具有龐大的基、且剛直性高,因此具有使用其的環氧樹脂組成物之硬化物係硬化收縮率變小、低翹曲性優異的特徵。藉此,可獲得減低對半導體元件接合部之應力的效果。
一般式(1)、(2)、(3)、(4)所示環氧樹脂的調配比例,係相對於環氧樹脂(A)全體,較佳為20質量%以上、更佳為30質量%以上、特佳為50質量%以上。若調配比例在上述範圍內,便可有效地減低對半導體元件接合部之應力。
環氧樹脂(A)全體的調配比例下限值並無特別限定,相對於環氧樹脂組成物全體,較佳係3質量%以上、更佳係5質量%以上。若環氧樹脂(A)全體的調配比例在上述範圍內,因黏度上升而引起導線偏移或導線斷裂的疑虞較少。又,環氧樹脂(A)全體的調配比例上限值並無特別限定,相對於環氧樹脂組成物全體,較佳係15質量%以下、更佳係13質量%以下。若環氧樹脂全體的調配比例上限值在上述範圍內,則因吸濕率增加而引起耐濕可靠性降低等的疑虞較少。
本發明半導體裝置所使用的密封材用環氧樹脂組成物係含有硬化劑(B)。硬化劑(B)大致可區分為例如:加成聚合型硬化劑、觸媒型硬化劑、縮合型硬化劑等3種類型。
加成聚合型硬化劑係可舉例如:二乙三胺(DETA)、三乙四胺(TETA)、間二甲苯二胺(MXDA)等脂肪族多元胺;二胺基二苯甲烷(DDM)、間苯二胺(MPDA)、二胺二苯碸(DDS)等芳香族多元胺;包括雙氰胺(DICY)、有機酸二醯肼等之多元胺化合物;六氫酞酸酐(HHPA)、甲基四氫酞酸酐(MTHPA)等脂環族酸酐;包括偏苯三甲酸酐(TMA)、均苯四甲酸酐(PMDA)、二苯基酮四羧酸(BTDA)等芳香族酸酐等之酸酐;酚醛型酚樹脂、酚聚合物等聚酚化合物;聚硫醚、硫酯、硫醚等聚硫醇化合物;異氰酸酯預聚物、嵌段化異氰酸酯等異氰酸酯化合物;含羧酸之聚酯樹脂等有機酸類等等。
觸媒型硬化劑係可舉例如:苄二甲胺(BDMA)、2,4,6-三(二甲胺基甲基)酚(DMP-30)等三級胺化合物;2-甲基咪唑、2-乙基-4-甲基咪唑(EMI24)等咪唑化合物;BF3錯合物等路易斯酸等等。
縮合型硬化劑係可舉例如:酚醛型酚樹脂、可溶酚醛型酚樹脂等酚樹脂系硬化劑;諸如含羥甲基的尿素樹脂之尿素樹脂;諸如含羥甲基的三聚氰胺樹脂之三聚氰胺樹脂等等。
該等之中,從耐燃性、耐濕性、電氣特性、硬化性、保存安定性等均衡的觀點,較佳為酚樹脂系硬化劑。所謂「酚樹脂系硬化劑」係指一分子內具有2個以上酚性羥基的所有單體、寡聚物、聚合物,其分子量、分子構造並無特別限定。酚樹脂系硬化劑係可舉例如:酚酚醛樹脂、甲酚酚醛樹脂等酚醛型樹脂;三酚甲烷型酚樹脂等多官能型酚樹脂;萜烯改質酚樹脂、二環戊二烯改質酚樹脂等改質酚樹脂;具有伸苯基骨架及/或伸聯苯基骨架的酚芳烷基樹脂、具有伸苯基及/或伸聯苯基骨架的萘酚芳烷基樹脂等芳烷基型樹脂;雙酚A、雙酚F等雙酚化合物等等,該等係可單獨使用1種、亦可併用2種以上。又,從使用銅導線的半導體裝置在高溫及高濕環境下所造成電氣接合部腐蝕的觀點,該等酚樹脂系硬化劑中所含有之諸如鈉離子、氯離子等之類的離子性雜質量,較佳係10ppm以下、更佳係5ppm以下。
若考慮統括進行密封成形後,經由單片化的步驟而獲得之半導體裝置的可靠性,因為屬於薄型大型的製品,因而為能防止因翹曲所造成對內建半導體元件的損傷、因對銅導線與元件間之接合部分的應力而造成之可靠性降低,所以,環氧樹脂組成物係特佳其中含有從一般式(5)所示酚樹脂所構成群組中選擇之至少1種硬化劑、及/或從一般式(6)所示酚樹脂所構成群組中選擇之至少1種硬化劑。
(一般式(5)中,-R9-係伸苯基或伸萘基,當-R9-係伸萘基的情況,羥基的鍵結位置係可為α位、亦可為β位;-R10-係伸苯基、伸聯苯基或伸萘基;R11與R12分別係經導入R9、R10上,且碳數1~10的烴基,該等係可彼此相同亦可不同;f係0~5的整數,g係0~8的整數,n5的平均值係1以上、3以下的正數)。
(一般式(6)中,n6的平均值係0以上且4以下的正數)。
一般式(5)所示酚樹脂中,-R9-及/或R10-係伸萘基者,因為剛直性高,因而具有使用其的環氧樹脂組成物之硬化物係硬化收縮率變小、低翹曲性優異之特徵,就此觀點而言,係屬較佳。藉此,可減低對半導體元件接合部的應力。
再者,-R9-及/或-R10-係伸苯基、伸聯苯基者,因為交聯點間距離變長,因而具有使用其的環氧樹脂組成物之硬化物係吸濕率低、且高溫下呈低彈性模數化的特徵,因而屬較佳。藉此,可減低對半導體元件接合部的應力,俾更進一步提升耐濕可靠性。
一般式(5)所示酚樹脂係可舉例如:含有伸苯基骨架的酚芳烷基樹脂、含有伸聯苯基骨架的酚芳烷基樹脂、含有伸苯基骨架的萘酚芳烷基樹脂等,在屬於一般式(5)之構造的前提下,其餘並無特別限定。該等係可單獨使用1種、亦可併用2種以上。
一般式(5)所示酚樹脂的調配比例係相對於硬化劑(B)全體,較佳為20質量%以上、更佳為30質量%以上、特佳為50質量%以上。若調配比例在上述範圍內,便可有效地獲得減低半導體裝置中對半導體元件接合部的應力之效果。
一般式(6)所示酚樹脂係具有能獲得熱彈性模數低、低吸濕率成形品的特徵。藉此,可獲得減低對半導體元件接合部的應力,更進一步提升耐濕可靠性的效果。
針對硬化劑(B)全體的調配比例下限值並無特別限定,在總環氧樹脂組成物中,較佳為0.8質量%以上、更佳為1.5質量%以上。若調配比例的下限值在上述範圍內,便可獲得充分的流動性。又,針對硬化劑(B)全體的調配比例上限值,亦無特別限定,在總環氧樹脂組成物中,較佳為10質量%以下、更佳為8質量%以下。若調配比例的上限值在上述範圍內,因吸濕率增加而引起耐濕可靠性降低等的疑虞較少。
再者,當使用酚樹脂系硬化劑作為硬化劑(B)的情況,環氧樹脂與酚樹脂系硬化劑的調配比率,係總環氧樹脂的環氧基數(EP)、與總酚樹脂系硬化劑的酚性羥基數(OH)之當量比(EP)/(OH),較佳為0.8以上且1.3以下。若當量比在此範圍內,則引起半導體密封用環氧樹脂組成物的硬化性降低、或樹脂硬化物的物性降低等之疑虞較少。
在本發明半導體裝置所使用的密封材用環氧樹脂組成物中,作為填充材,可使用球狀二氧化矽(C)、及金屬氫氧化物及/或金屬氫氧化物固溶體(D)。本發明中,球狀二氧化矽(C)較佳係眾數直徑(mode diameter)35μm以下者、更佳係30μm以下者。藉由使用此範圍之物,亦可適用於導線間距狹窄的半導體裝置。且,球狀二氧化矽(C)較佳係55μm以上的粗大粒子含有量為0.1質量%以下者、更佳係0.05質量%以下者。藉由使用此範圍之物,可抑制因粗大粒子夾置於導線間並推倒而造成的導線偏移。此種具有特定粒度分佈的填充材係可直接利用市售的填充材、或者藉由將該等進行複數混合、或篩分等予以調整而獲得。又,本發明所使用熔融球狀二氧化矽的眾數直徑,係可使用市售雷射式粒度分佈儀(例如島津製作所股份有限公司製,SALD-7000等)等進行測定。
本發明所使用的球狀二氧化矽(C)係抑制環氧樹脂組成物的熔融黏度上升。又,藉由將球狀二氧化矽(C)的粒度分佈調整為更寬廣,便可提高在環氧樹脂組成物中的球狀二氧化矽(C)含有量。
球狀二氧化矽(C)的含有比例並無限定,但若考慮半導體裝置的翹曲,相對於環氧樹脂組成物全體,較佳為82質量%以上、更佳為86質量%以上。除減低翹曲的效果之外,若屬於不低於上述下限值的範圍,則因為能獲得低吸濕性、低熱膨張性,因而耐濕可靠性不足的疑虞較少。又,球狀二氧化矽的含有比例上限值,若考慮成形性,則相對於環氧樹脂組成物全體,較佳為92質量%以下、更佳為89質量%以下。若屬於不超越上述上限值的範圍,則發生流動性降低導致成形時填充不良等情形、或因高黏度化而導致半導體裝置內發生導線偏移等不良情況的疑虞較少。
本發明所使用的金屬氫氧化物及/或金屬氫氧化物固溶體(D),係藉由將半導體裝置單片化時,釋出結晶水而抑制因與刀片間之摩擦所造成的放熱,而發揮減低切削阻力,進而抑制刀片磨耗的效果。又,因為金屬氫氧化物及/或金屬氫氧化物固溶體(D)呈現鹼性,因而將在高溫下會引起電氣接合部腐蝕的酸性氣體予以中和,俾可發揮提升高溫保管性的效果。金屬氫氧化物的平均粒徑、及金屬氫氧化物固溶體中的固體平均粒徑,較佳係1μm以上且10μm以下、更佳係2μm以上且5μm以下。若未滿上述下限值,便會有因材料黏度上升而造成導線偏移發生的可能性,若超越上述上限值,在切削時便會因引起金屬氫氧化物及/或金屬氫氧化物固溶體(D)的脫落,而有造成成形品截面產生氣孔、以及因脫落的粒子而發生成形品破損的可能性。
金屬氫氧化物中的結晶水含有率、金屬氫氧化物固溶體中的結晶水含有率,較佳係均為20質量%以上。若使用未滿上述下限值者,便無法充分發揮利用結晶水釋放而抑制放熱、以及減低切削阻力的效果,因而較不佳。又,總金屬氫氧化物及/或金屬氫氧化物固溶體(D)成分的添加量,係在總環氧樹脂組成物中,較佳為0.5質量%以上且10質量%以下、特佳係1~5質量%。若低於上述下限值,便無法期待利用結晶水釋放而抑制放熱、以及減低切削阻力的效果。若超過上述上限值,因為流動性極端降低、或成形品的強度降低,因而在單片化時會有發生龜裂缺損的問題。
本發明所使用的(D)成分,較佳係含有20質量%以上結晶水的金屬氫氧化物及/或含有20質量%以上結晶水的金屬氫氧化物固溶體。此種金屬氫氧化物並無特別限定,可舉例如:氫氧化鋁、氫氧化鎂等。又,亦可使用將其中一部分施行水鋁土化、細微化、或鈉離子減少化等,而提升結晶水開始釋放溫度的高耐熱型氫氧化鋁。該等係可單獨使用、亦可併用2種以上。又,亦可使用將金屬氫氧化物結晶中的其中一部分元素,取代為鐵、鎳、鈦、鋅、矽等其他元素,並形成固溶體的金屬氫氧化物固溶體。該等係可單獨使用、亦可併用2種以上。
在本發明半導體裝置所使用的密封材用環氧樹脂組成物中,亦可併用除上述(C)成分、(D)成分以外的填充材。能併用的其他填充材可列舉一般使用於密封材用環氧樹脂組成物中者。可舉例如破碎二氧化矽、氧化鋁、鈦白、氮化矽等,該等填充材係可單獨使用,且併用2種以上亦無妨。又,該等亦可利用偶合劑施行表面處理。填充材的形狀係為求流動性改善,較佳盡可能為正球狀,且粒度分佈廣。
針對由(C)成分、(D)成分及其他填充材所構成的總填充材含有比例並無特別限定,但從翹曲、耐濕可靠性等觀點,相對於環氧樹脂組成物全體,較佳係80質量%以上、更佳係88質量%以上。又,從流動性等觀點,相對於環氧樹脂組成物全體,較佳係92質量%以下、更佳係90質量%以下。
本發明半導體裝置所使用的密封材用環氧樹脂組成物,亦可更進一步含有硬化促進劑。硬化促進劑係只要屬於能促進環氧樹脂的環氧基、與硬化劑(例如酚樹脂系硬化劑的酚性羥基)間之交聯反應者便可,可使用一般使用於密封材用環氧樹脂組成物中者。例如:1,8-二氮雜雙環(5,4,0)十一烯-7等二氮雜雙環烯及其衍生物;三苯膦、甲基二苯膦等有機膦類;2-甲基咪唑等咪唑化合物;四苯鏻‧四苯基硼酸鹽等四取代鏻‧四取代硼酸鹽;膦化合物與醌化合物的加成物等,該等係可單獨使用1種、亦可併用2種以上。
硬化促進劑的調配比例下限值並無特別限定,相對於環氧樹脂組成物全體,較佳係0.05質量%以上、更佳係0.1質量%以上。硬化促進劑的調配比例下限值若在上述範圍內,引起硬化性降低的疑虞較少。又,硬化促進劑的調配比例上限值並無特別限定,相對於環氧樹脂組成物全體,較佳係1質量%以下、更佳係0.5質量%以下。硬化促進劑的調配比例上限值若在上述範圍內,則引起流動性降低的疑虞較少。
硬化促進劑中,就從流動性的觀點,更佳為膦化合物與醌化合物的加成物。膦化合物與醌化合物的加成物中所使用之膦化合物,係可舉例如:三苯膦、三(對甲苯基)膦、二苯基環己基膦、三環己基膦、三丁基膦等。又,膦化合物與醌化合物的加成物中所使用之醌化合物,係可舉例如:1,4-苯醌、甲基-1,4-苯醌、甲氧基-1,4-苯醌、苯基-1,4-苯醌、1,4-萘醌等。該等膦化合物與醌化合物的加成物中,更佳為三苯膦與1,4-苯醌的加成物。膦化合物與醌化合物的加成物之製造方法並無特別限制,例如將使用為原料的膦化合物與醌化合物,在溶解二者的有機溶劑中進行加成反應,再施行離析便可。
在本發明半導體裝置所使用的密封材用環氧樹脂組成物中,更進一步視需要亦可適當調配:氫氧化鋯等鋁腐蝕防止劑;氧化鉍水合物、氧化鎂水合物及氧化鋁水合物等無機離子交換體;γ-環氧丙氧基丙基三甲氧基矽烷、3-硫醇基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷等偶合劑;碳黑、氧化鐵紅等著色劑;聚矽氧橡膠等低應力成分;棕櫚蠟等天然蠟、合成蠟;硬脂酸鋅等高級脂肪酸及其金屬鹽類或烷烴等離型劑;抗氧化劑等各種添加劑。
特別係關於鋁腐蝕防止劑,宜為能將屬於在高溫時會造成銅導線與鋁墊間之接合部腐蝕的氣體之酸性氣體,予以中和的鹼性物質,除可適用屬於上述(D)成分的氫氧化鋁、氫氧化鎂之外,尚可舉例如:氫氧化鋯、水滑石、水鋁土等。藉由含有該等鋁腐蝕防止劑,便可更進一步提升含有銅導線的半導體裝置之高溫保管特性。
本發明半導體裝置所使用的密封材用環氧樹脂組成物中,上述鋁腐蝕防止劑的調配量並無特別限定,相對於環氧樹脂組成物全體,較佳為0.1~1重量%。更佳為0.1~0.5重量%。
藉由將鋁腐蝕防止劑的調配量設定在上述下限值以上,便可達高溫保管性、耐濕性的提升。又,藉由設在上述上限值以下,便可在不會使導線偏移、PMC後翹曲、及製程翹曲變動量增大的情況下,提升高溫保管特性及耐濕性。
上述鋁腐蝕防止劑的平均粒徑較佳係1μm以上且10μm以下。更佳係2μm以上且5μm以下。
藉由將鋁腐蝕防止劑的平均粒徑設定在上述下限值以上,便可在不會使PMC後翹曲及製程翹曲變動量增大的情況下,提升高溫保管特性及耐濕性。又,藉由設定在上述上限值以下,便可在不會使導線偏移增大的情況下,提升高溫保管特性及耐濕性。
本發明半導體裝置所使用的密封材用環氧樹脂組成物,特佳係含有上述(A)環氧樹脂、(B)硬化劑、及(C)球狀二氧化矽,以及作為上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體的氫氧化鋁及/或氫氧化鎂,更進一步含有從氫氧化鋯、水滑石、水鋁土所構成群組中選擇之一種以上鋁腐蝕防止劑。
藉此,切削性、工具磨耗性、PMC後翹曲、及製程翹曲變動量均優異,且可大幅提升高溫保管特性及耐濕性。
再者,視需要亦可將無機填充材預先利用環氧樹脂或酚樹脂施行處理後才使用,處理的方法係有如:使用溶劑施行混合後再除去溶劑的方法,或者直接添加於無機填充材中,並使用混合機施行混合處理的方法等。
本發明半導體裝置所使用的密封材用環氧樹脂組成物,係可使用將前述各成分,使用例如攪拌機等施行常溫混合者,或者更進一步在後續利用諸如滾輪機、捏合機、擠出機等混練機施行熔融混練,再施行冷卻後粉碎者等,或者視需要經調整適當分散度與流動性等者。
接著,針對本發明的半導體裝置進行說明。本發明的半導體裝置,係具備有:具有晶片墊部之導線架或電路基板;1個以上半導體元件,其係積層或並列搭載於導線架的晶片墊部上或電路基板上;銅導線,其係將在導線架或電路基板上所設置的電氣接合部、與在半導體元件上設置的電極墊施行電氣接合;密封材,其係將半導體元件與銅導線施行密封。又,本發明的半導體裝置係使用密封材用環氧樹脂組成物,利用轉移模、壓縮模、射出成形模等習知成形方法,統括地將複數個半導體元件等電子零件施行密封成形後,再經單片化步驟便可獲得。
本發明所使用的導線架或電路基板並無特別限制,可舉例如捲帶式承載封裝(TCP)、球柵陣列(BGA)、晶片尺寸封裝(CSP)、四方形扁平無引腳封裝(QFN)、導線架‧BGA(LF-BGA)、模製陣列封裝式BGA(MAP-BGA)等以往公知半導體裝置中所使用的導線架或電路基板。所謂「電氣接合部」係指導線架的導線焊接部、及電路基板的電極墊等,在導線架或電路基板中接合導線的端子。
本發明半導體裝置的形態可列舉在利用環氧樹脂組成物施行密封成形後,經單片化的步驟而獲得之MAP型球柵陣列(BGA)、MAP型晶片尺寸封裝(CSP)、MAP型四方形平面無引腳封裝(QFN)等。經依照上述轉移模等成形方法施行密封的半導體裝置,直接、或者在80℃~200℃左右的溫度經10分鐘~10小時左右的時間而完全硬化後,經由單片化的步驟,搭載於電子機器等之上。又,單片化的步驟亦可在統括密封成形後,於利用熱處理而完全硬化之前。
以下例示本發明實施例,惟本發明並不僅侷限於該等。調配比例係設為「質量份」。針對實施例、比較例所使用密封材用環氧樹脂組成物的各成分,如下示。
密封材用環氧樹脂組成物的各成分:
E-1:雙酚A型環氧樹脂(三菱化學股份有限公司製,YL-6810。熔點45℃,環氧當量172g/eq)。
E-2:具伸聯苯基骨架的酚芳烷基型環氧樹脂(一般式(1)中,-R1-為伸苯基、-R2-為伸聯苯基、a為0、b為0的環氧樹脂。日本化藥股份有限公司製,NC3000。軟化點58℃,環氧當量274g/eq,n1係平均值2.5)。
E-3:一般式(2)所示環氧樹脂(一般式(2)中,R6為氫原子、c為0、d為0、e為0的成分50質量%、及R6為氫原子、c為1、d為0、e為0的成分40質量%、及R6為氫原子、c為1、d為1、e為0的成分10質量%之混合物的環氧樹脂。DIC股份有限公司製,HP4770。軟化點72℃,環氧當量205g/eq)。
E-4:一般式(3)所示環氧樹脂(一般式(3)中,R7、R8均為氫原子、n3為0。三菱化學股份有限公司製,YX-8800。熔點110℃,環氧當量181g/eq)。
E-5:一般式(4)所示環氧樹脂(DIC股份有限公司製,HP-7200L。軟化點56℃,環氧當量245g/eq,n4係平均值0.4)。
E-6:鄰甲酚酚醛型環氧樹脂(日本化藥股份有限公司製,EOCN-1020-55。軟化點55℃,環氧當量200g/eq)。
H-1:酚酚醛樹脂(住友電木股份有限公司製,PR-HF-3。軟化點80℃,羥基當量104g/eq)。
H-2:具伸聯苯基骨架的酚芳烷基樹脂(一般式(5)中,-R9-為伸苯基、-R10-為伸聯苯基、f為0、g為0的化合物。明和化成股份有限公司製,MEH-7851SS。軟化點65℃,羥基當量203g/eq,n5係平均值1.9)。
H-3:具伸苯基骨架的萘酚芳烷基樹脂(一般式(5)中,-R9-為伸萘基、-R10-為伸苯基、f為0、g為0的化合物。東都化成股份有限公司製,SN-485。軟化點87℃,羥基當量210g/eq,n5為平均值1.8)。
H-4:一般式(6)所示酚樹脂(日本化藥股份有限公司製,KAYAHARD DPN。軟化點87℃,羥基當量165g/eq,n6係平均值0.6)。
熔融球狀二氧化矽1:MICRON股份有限公司製,HS-202(眾數直徑35μm,比表面積3.5m2
/g,55μm以上的粗大粒子含有量:0.02質量%)
熔融球狀二氧化矽2:MICRON股份有限公司製,針對HS-105使用300篩目的篩經去除粗大粒子者(眾數直徑37μm,比表面積2.5m2
/g,55μm以上的粗大粒子含有量:0.1質量%)
熔融球狀二氧化矽3:電氣化學工業股份有限公司製,FB-940(眾數直徑30μm,比表面積3.2m2
/g,55μm以上的粗大粒子含有量:0.2質量%)
熔融球狀二氧化矽4:MICRON股份有限公司製,HS-203(眾數直徑30μm,比表面積3.7m2
/g,55μm以上的粗大粒子含有量:0.01質量%)
金屬氫氧化物1:住友化學股份有限公司製,氫氧化鋁CL-303(平均粒徑3μm,結晶水含有量34質量%)
金屬氫氧化物2:住友化學股份有限公司製,氫氧化鋁CL-308(平均粒徑8μm,結晶水含有量34質量%)
金屬氫氧化物3:昭和電工股份有限公司製,氫氧化鋁H42M(平均粒徑1μm,結晶水含有量34質量%)
金屬氫氧化物4:日本輕金屬股份有限公司製,氫氧化鋁BW153(平均粒徑15μm,結晶水含有量34質量%)
金屬氫氧化物5:神島化學工業股份有限公司製,氫氧化鎂W-H4(平均粒徑2μm,結晶水含有量31質量%)
金屬氫氧化物固溶體:Tateho化學工業股份有限公司製,ECOMAG Z-10(平均粒徑1μm,結晶水含有量27質量%)
未燒成黏土:(SHIRAISHI CALCIUM股份有限公司製,KAOBRITE 90(平均粒徑1μm,結晶水含有量13質量%)
滑石:竹原化學工業股份有限公司製,Microlite(平均粒徑2.5μm,結晶水含有量5質量%)
再者,金屬氫氧化物及/或金屬氫氧化物固溶體等的結晶水含有量,係利用TG/DTA分析裝置,從25℃依5℃/分鐘升溫至650℃時的質量減少值。
鋁腐蝕防止劑1:共和化學股份有限公司製,DHT-4A、平均粒徑0.5μm、水滑石
鋁腐蝕防止劑2:東亞合成股份有限公司製,IXE-800、平均粒徑:5μm、ZrO(OH)2
硬化促進劑1:一般式(7)所示三苯膦與1,4-苯醌的加成物
環氧矽烷:γ-環氧丙氧基丙基三甲氧基矽烷
碳黑
棕櫚蠟
E-1 1.40質量份
E-4 3.27質量份
H-2 5.33質量份
熔融球狀二氧化矽1 86質量份
金屬氫氧化物1 3質量份
硬化促進劑1 0.3質量份
環氧矽烷 0.25質量份
碳黑 0.25質量份
棕櫚蠟 0.2質量份
將上述成分在常溫使用攪拌機進行混合,接著在70~100℃施行滾輪機混練,經冷卻後施行粉碎,便獲得密封材用環氧樹脂組成物。
依照表1~5所記載密封材用環氧樹脂組成物的配方,並與實施例1同樣地進行操作,獲得環氧樹脂組成物。
針對實施例、比較例所使用的導線係如下示。
銅導線:Tatsuta電線股份有限公司製,TC-E(銅純度99.99質量%,線徑係如表1~5所示。)
金導線:住友金屬礦山股份有限公司製,NL-4(金純度99.99質量%,線徑係如表1~5所示。)
針對依各實施例及各比較例所獲得密封材用環氧樹脂組成物,施行以下的評估。所獲得結果係如表1~5所示。
螺旋流動:使用低壓轉印成形機(KOHTAKI精機股份有限公司製,KTS-15),在根據EMM1-1-66的螺旋流動測定用模具中,依模具溫度175℃、注入壓力6.9MPa、保壓時間120秒的條件注入環氧樹脂組成物,並測定流動長度。單位係cm。若在80cm以下,便會有發生諸如封裝未填充等成形不良的情況。
導線流動率:將已形成鋁墊的TEG晶片(3.5mm×3.5mm,墊間距係50μm),黏合於352接腳BGA(基板係厚度0.56mm,雙順丁烯二醯亞胺‧三 樹脂/玻璃纖維布基板,封裝尺寸係30×30mm,厚度1.17mm)的晶片墊部上,將TEG晶片的鋁墊與基板側端子,使用導線依導線間距80μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物進行密封成形,便製得352接腳BGA封裝,再依175℃、4小時的條件施行後硬化。經冷卻至室溫後,便利用軟X射線透視裝置(SOFTEX(股)製,PRO-TEST100)進行觀察,將導線的流動率依(流動量)/(導線長)的比率表示,並記載該值成為最大的導線部之值。單位係%。若該值超過5%,則相鄰導線間發生接觸的可能性高。
切削阻力及工具磨耗性:將使用低壓轉印成形機(KOHTAKI精機(股)製,KTS-30),依模具溫度175℃、注入壓力6.9MPa、硬化時間180秒的條件施行成形的厚3mm試驗片,在175℃施行8小時加熱處理以作為後硬化,之後,使用以鑽床為切削工具的磨耗試驗裝置,進行切削阻力及工具磨耗性的評估。該試驗裝置係使用鑽床徑3mm、刀片切斷同等級的鑽床,並設定為鑽床旋轉數850rpm、荷重2kg重(19.6N)。試驗片係分別各穿孔30次而施行評估,為避免因刀片切斷程度差異所造成的誤差,因而將試驗片施行30次穿孔,並在其前後將厚3mm鋁板施行穿孔,再依照下示值評估切削阻力及工具磨耗性。
切削阻力:t1/tAl0
工具磨耗性:tAl30/tAl0
t1:試驗片第1次穿孔時的穿孔所需時間
tAl0:試驗片穿孔前的鋁板穿孔所需時間
tAl30:試驗片第30次穿孔後的鋁板穿孔所需時間
再者,切削阻力及工具磨耗性均係值越小越佳。
高溫保管特性(185℃):將已形成鋁電極墊的TEG(TEST ELEMENT GROUP,測試元件組)晶片(3.5mm×3.5mm),黏合於352接腳BGA(基板係厚度0.56mm的雙順丁烯二醯亞胺‧三樹脂/玻璃纖維布基板,封裝尺寸係30×30mm,厚度1.17mm)的晶片墊部上,依TEG晶片的鋁電極墊與基板側端子成為菊鍊(daisy chain)的方式,使用導線依導線間距50μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,便製得352接腳BGA封裝。將所製得封裝依175℃施行8小時的後硬化之後,再施行高溫保管試驗(185℃)。每隔24小時施行配線間的電阻值測定,將該值相對於初始值增加20%的封裝判定為「不良」,測定直到變成不良為止的時間。不良時間係以測定n=5個,有1個發生不良的時間表示。單位係小時。所有的封裝直到1000Hr均無不良發生者,便判為「1000<」。
高溫保管特性(200℃):將已形成鋁電極墊的TEG(TEST ELEMENT GROUP)晶片(3.5mm×3.5mm),黏合於352接腳BGA(基板係厚度0.56mm的雙順丁烯二醯亞胺‧三樹脂/玻璃纖維布基板,封裝尺寸係30×30mm、厚度1.17mm)的晶片墊部上,依TEG晶片的鋁電極墊與基板側端子成為菊鍊的方式,使用導線依導線間距50μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,便製得352接腳BGA封裝。將所製得封裝依175℃施行8小時的後硬化之後,再施行高溫保管試驗(200℃)。每隔24小時施行配線間的電阻值測定,將該值相對於初始值增加20%的封裝判定為「不良」,測定直到變成不良為止的時間。不良時間係以測定n=5個,有1個發生不良的時間表示。單位係小時。
高溫動作特性:將已形成鋁電極墊的TEG(TEST ELEMENT GROUP)晶片(3.5mm×3.5mm),黏合於352接腳BGA(基板係厚度0.56mm的雙順丁烯二醯亞胺‧三樹脂/玻璃纖維布基板,封裝尺寸係30×30mm、厚度1.17mm)的晶片墊部上,依TEG晶片的鋁電極墊與基板側端子成為菊鍊的方式,使用導線依導線間距50μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,便製得352接腳BGA封裝。將所製得封裝依175℃施行8小時的後硬化之後,對菊鍊連接的二端流通入0.1A的直流電流。在此狀態下施行在185℃的高溫保管,每隔12小時測定配線間的電阻值,並將所測得電阻值相對於初始值增加20%的封裝判定為「不良」,測定直到變成不良為止的時間。不良時間係以測定n=4個,有1個發生不良的時間表示。單位係小時。
耐濕可靠性(130℃):將已形成鋁電路的TEG晶片(3.5mm×3.5mm,鋁電路係無保護膜的剝露狀態),黏合於352接腳BGA(基板係厚度0.56mm的雙順丁烯二醯亞胺‧三樹脂/玻璃纖維布基板,封裝尺寸係30×30mm、厚度1.17mm)的晶片墊部上,將鋁墊與基板側端子使用導線依導線間距80μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,便製得352接腳BGA封裝。將所製得封裝依175℃施行8小時的後硬化之後,根據IEC68-2-66施行HAST試驗(Highly Accelerated temperature and humidity Stress Test,高加速溫度及濕度應力試驗)。試驗條件係130℃、85%RH、施加20V,進行168小時處理,測定電路有無斷路(open failure)。每一封裝具有4端子,將5個封裝合計20電路施行評估。單位係不良電路的個數。
耐濕可靠性(140℃):將已形成鋁電路的TEG晶片(3.5mm×3.5mm,鋁電路係無保護膜的剝露狀態),黏合於352接腳BGA(基板係厚度0.56mm的雙順丁烯二醯亞胺‧三樹脂/玻璃纖維布基板,封裝尺寸係30×30mm、厚度1.17mm)的晶片墊部上,將鋁墊與基板側端子使用導線依導線間距80μm施行導線焊接。將其使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,便製得352接腳BGA封裝。將所製得封裝依175℃施行8小時的後硬化之後,根據IEC68-2-66施行HAST試驗(Highly Accelerated temperature and humidity Stress Test)。試驗條件係140℃、85%RH、施加20V,進行168小時處理,測定電路有無斷路。每一封裝具有4端子,將5個封裝合計20電路施行評估。單位係不良電路的個數。
後硬化(PMC)後的翹曲量:使用低壓轉印成形機(TOWA製,Y系列),依模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘的條件,利用環氧樹脂組成物施行密封成形,製作225接腳BGA封裝(基板厚度0.36mmBT樹脂玻璃纖維布基材,封裝尺寸24×24mm,密封樹脂厚度1.17mm,將矽晶片尺寸9×9mm、厚度0.35mm施行黏晶者)。將所製得封裝依175℃施行8小時的後硬化之後,於25℃使用表面粗度計從封裝的閘極測定對角方向的位移,將位移差最大值設為「後硬化後的翹曲量」。單位係μm。將n=3的平均值記於表中。
製程翹曲變動量:經上述後硬化後的翹曲量測定後,施行IR迴焊處理(根據260℃JEDEC條件)後,在25℃使用表面粗度計,從封裝的閘極測定對角方向的位移,將位移差最大值設為「製程翹曲量」。使用該值依照下式求取製程翹曲變動量。單位係μm。將n=3的平均值記於表中。
製程翹曲變動量=製程翹曲量-後硬化後的翹曲量
由表1~5中得知,實施例1~34係導線流動率、高溫保管特性、高溫動作特性、及耐濕可靠性均優異。
特別係使用含有(A)環氧樹脂、(B)硬化劑、及(C)球狀二氧化矽,以及作為(D)金屬氫氧化物及/或金屬氫氧化物固溶體的氫氧化鋁,更進一步含有氫氧化鋯、水滑石作為鋁腐蝕防止劑的環氧樹脂組成物之實施例2~4、實施例14~16,於表中所示其他特性、以及200℃的高溫保管性、140℃的耐濕可靠性均呈優異特性。
依本發明所獲得的半導體裝置,係具備有:具有晶片墊部之導線架或電路基板;1個以上半導體元件,其係積層或並列搭載於上述導線架的晶片墊部上或上述電路基板上;銅導線,其係將在上述導線架的晶片墊部或上述電路基板上所設置的電氣接合部、與在上述半導體元件上所設置的電極墊施行電氣接合;以及密封材,其係將上述半導體元件與上述銅導線施行密封;特別可適用於經利用上述密封材用環氧樹脂組成物施行統括密封成形之後,將成形品裁切而單片化的MAP方式之半導體裝置。
1...半導體元件
2...黏晶材硬化體
3...銅導線
4...密封材
5...電極墊
6...電路基板
7...電極墊
8...焊錫球
9...切割線
圖1為顯示本發明一實施形態的半導體裝置之剖面構造的圖。
1...半導體元件
2...黏晶材硬化體
3...銅導線
4...密封材
5...電極墊
6...電路基板
7...電極墊
8...焊錫球
9...切割線
Claims (10)
- 一種半導體裝置,係具備有:具有晶片墊部之導線架或電路基板,其係具備有電氣接合部;1個以上的半導體元件,其係積層或並列搭載於上述導線架的上述晶片墊部上或上述電路基板上,且具備有電極墊;銅導線,其係將上述導線架或上述電路基板的上述電氣接合部、與上述半導體元件的上述電極墊施行電氣接合;以及密封材,其係將上述半導體元件與上述銅導線施行密封;其中,上述銅導線的線徑係18μm以上、23μm以下;上述密封材係由環氧樹脂組成物的硬化物構成;上述環氧樹脂組成物係含有(A)環氧樹脂、(B)硬化劑、(C)球狀二氧化矽、(D)金屬氫氧化物及/或金屬氫氧化物固溶體;上述半導體裝置係在利用上述環氧樹脂組成物施行密封成形後,經由單片化步驟而獲得。
- 如申請專利範圍第1項之半導體裝置,其中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體的平均粒徑係1μm以上且10μm以下。
- 如申請專利範圍第1項之半導體裝置,其中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體,相對於上述環氧樹脂組成物總質量的含有比例,係1質量%以上且10質量%以下。
- 如申請專利範圍第1項之半導體裝置,其中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體係含有20質量%以上結晶水。
- 如申請專利範圍第1項之半導體裝置,其中,上述(D)金屬氫氧化物及/或金屬氫氧化物固溶體係氫氧化鋁及/或氫氧化鎂。
- 如申請專利範圍第5項之半導體裝置,其中,上述環氧樹脂組成物係更進一步含有從氫氧化鋯、水滑石、水鋁土所構成群組中選擇之1種以上鋁腐蝕防止劑。
- 如申請專利範圍第1項之半導體裝置,其中,上述(C)球狀二氧化矽的眾數直徑係35μm以下,且上述(C)球狀二氧化矽中所含55μm以上的粒子之含有率係0.1質量%以下。
- 如申請專利範圍第1項之半導體裝置,其中,上述環氧樹脂係含有從下述環氧樹脂所構成群組中選擇之至少1種環氧樹脂:一般式(1):
- 如申請專利範圍第1項之半導體裝置,其中,上述硬化劑係含有:一般式(5):
- 如申請專利範圍第1項之半導體裝置,其中,上述硬化劑係含有:一般式(6):
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CN104882386B (zh) | 2014-02-27 | 2019-03-01 | 恩智浦美国有限公司 | 半导体器件格栅阵列封装 |
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