JP5470806B2 - 半導体装置並びに封止用エポキシ樹脂組成物及びその製造方法 - Google Patents
半導体装置並びに封止用エポキシ樹脂組成物及びその製造方法 Download PDFInfo
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- JP5470806B2 JP5470806B2 JP2008287524A JP2008287524A JP5470806B2 JP 5470806 B2 JP5470806 B2 JP 5470806B2 JP 2008287524 A JP2008287524 A JP 2008287524A JP 2008287524 A JP2008287524 A JP 2008287524A JP 5470806 B2 JP5470806 B2 JP 5470806B2
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Description
上、硫黄含有量5ppm以下の銅製ワイヤであり、前記銅製ワイヤのワイヤ径が25μm以下であり、前記封止用エポキシ樹脂組成物の硬化物の熱水抽出液のpHが4〜7であることを特徴とする。
大きくすることで接合面積を増大し接合面積を増大し接合不足起因の耐湿信頼性の低下を改善するという考え方もあるが、このようにワイヤ径を太くすることによる改善手法では集積度の向上を図ることはできず、片面封止からなる半導体装置として満足出来るものが得られない。
のpHをpHメーター(東亜ディーケーケー(株)製、HM−30S)で測定した。尚、熱水抽出液のpH測定に用いる封止用エポキシ樹脂組成物の硬化物として、実際の半導体装置から切り出した樹脂硬化物を用いることもできる。
ないが、樹脂組成物全体に対して、2重量%以上、8重量%以下であることが好ましく、2.5重量%以上、7重量%以下であることがより好ましい。フェノール樹脂系硬化剤の配合割合が上記範囲内であると、耐半田性の低下、流動性の低下等を引き起こす恐れが少ない。
動性が低下し成形時に充填不良等が生じたり、高粘度化による半導体装置内のワイヤ流れ等の不都合が生じたりする恐れが少ない。
封止用エポキシ樹脂組成物の製造
エポキシ樹脂としてオルソクレゾールノボラック型エポキシ樹脂(E−1:日本化薬(株)製、EOCN1020、軟化点55℃、エポキシ当量196)15.28重量部と、硬化剤としてフェノールノボラック樹脂(H−1:住友ベークライト(株)製、PR−HF−3軟化点80℃、水酸基当量104)8.02重量部と、無機充填材として溶融球状シリカ(平均粒径26.5μm、105μm以上の粒子1%以下)75重量部と、pH緩衝剤としてpH緩衝剤(P−1):250℃で6時間熱処理したハイドロタルサイト(Mg6Al2(OH)16(CO3)・mH2O、pH緩衝域4.7、熱重量分析による250℃の重量減少Aが13.23重量%、かつ200℃での重量減少Bが12.91重量%、A−B=0.32重量%)0.5重量部と、着色剤としてカーボンブラック0.3重量部と、シランカップリング剤としてエポキシシラン(γ−グリシドキシプロピルトリメトキシシラン)0.2重量部と、硬化促進剤としてトリフェニルホスフィン(TPP)0.3重量部と、離型剤としてカルナバワックス0.40重量部と、を常温でミキサーを用いて混合し、次に70〜100℃でロール混練し、冷却後粉砕して封止用エポキシ樹脂組成物を得た。mは0以上の整数である。
実施例20〜22には、銅製ワイヤ(Cuワイヤ5.5N:銅純度99.9995重量%、硫黄含有量0.12ppm、線径25μm)を用い、実施例23〜25には、銅製ワイヤ(Cuワイヤ6N:銅純度99.9999重量%、硫黄含有量0.05ppm、線径25μm)を用いた。
ビフェニル型エポキシ樹脂(E−2:ジャパンエポキシレジン(株)製、YX−4000、融点105℃、エポキシ当量190)
ビフェニレン骨格を有するフェノールアラルキル型エポキシ樹脂(E−3:日本化薬(株)製、NC3000、軟化点58℃、エポキシ当量274)
ビフェニレン骨格を有するフェノールアラルキル樹脂(H−3:明和化成(株)製、MEH−7851SS、軟化点65℃、水酸基当量203)
pH緩衝剤(P−3):230℃で1時間熱処理したハイドロタルサイト(Mg6Al2(OH)16(CO3)・mH2O、pH緩衝域5.5、熱重量分析による250℃の重量減少Aが8.76重量%、かつ200℃での重量減少Bが4.12重量%、A−B=4.64重量%) mは0以上の整数である。
実施例同様に封止用エポキシ樹脂組成物を作成した。使用したワイヤは銅製ワイヤ(Cuワイヤ4N:銅純度99.99重量%、硫黄含有率13ppm、線径20μm)である。
封止用エポキシ樹脂組成物を表1、表2に記載の配合とし、使用したワイヤを表1、表2に記載のものとした以外は、実施例1と同様にした。下記に使用したエポキシ樹脂等について説明する(すでに説明済みのものは、省略する)。
pH緩衝剤(P−4):炭酸マグネシウム(神島化学工業(株)製、炭酸マグネシウム金星、強熱減量54.0重量%、MgO42.6重量%)、pH緩衝域9.3
銅製ワイヤ(Cuワイヤ5NS:銅純度99.999重量%、硫黄含有率6ppm、線径23μm)
スパイラルフロー:低圧トランスファー成形機(コータキ精機(株)製、KTS−15)を用いて、EMMI−1−66に準じたスパイラルフロー測定用の金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し
、流動長を測定した。単位はcm。80cm以下であるとパッケージ未充填などの成形不良が生じる場合がある。
GROUP)チップ(3.5mm×3.5mm)を352ピンBGA(基板は厚さ0.56mm、ビスマレイミド・トリアジン樹脂/ガラスクロス基板、パッケージサイズは30×30mm、厚さ1.17mm)のダイパッド部に接着し、TEGチップのアルミニウム電極パッドと基板側端子をデージーチェーンになるようにワイヤボンディングした。これを、低圧トランスファー成形機(TOWA製、Yシリーズ)を用いて、金型温度175℃、注入圧力6.9MPa、硬化時間2分の条件でエポキシ樹脂組成物により封止成形して、352ピンBGAパッケージを作製した。作製したパッケージを、175℃、8時間で後硬化した後、高温保管試験(200℃)を行った。配線間の電気抵抗値が初期値に対し20%増加したパッケージを不良と判定し、不良になるまでの時間を測定した。不良時間はn=5ヶの平均値。単位は時間。全てのパッケージで192Hrまで不良発生のなかったものは192<とした。
2 ダイボンド材硬化体
3 銅線
4 封止用エポキシ樹脂組成物の硬化体
5 ソルダーレジスト
6 回路基板
7 半田ボール
Claims (4)
- 半導体素子と回路基板を封止用エポキシ樹脂組成物により片面封止してなり、前記半導体素子の各電極パッドと前記回路基板との電気的接続が銅製ワイヤで接合されている半導体装置であって、
前記銅製ワイヤが銅純度99.999重量%以上、硫黄含有量5ppm以下の銅製ワイヤであり、
前記銅製ワイヤのワイヤ径が25μm以下であり、
前記封止用エポキシ樹脂組成物の硬化物の熱水抽出液のpHが4〜7であり、
前記封止用エポキシ樹脂組成物がハイドロタルサイト水和物を0.01重量%以上、3重量%以下の割合で含むものであり、
前記ハイドロタルサイト水和物が、下記のa)とb):
a)予め200〜400℃で30分間〜24時間熱処理したものである、
b)熱重量分析による250℃での重量減少をA重量%とし、200℃での重量減少をB重量%としたとき、A−B≦5重量%を満足するものである、
の両方を満たすものである、
ことを特徴とする半導体装置。 - 前記封止用エポキシ樹脂組成物に含まれる前記ハイドロタルサイト水和物が下記一般式(1)で表される化合物である請求項1に記載の半導体装置。
- 前記銅製ワイヤが銅純度99.9995重量%以上である請求項1又は2記載の半導体装置。
- 自動車のエンジンルーム内で用いられる電子部品、パソコン用電源ユニット周辺の電子部品、家電用電源ユニット周辺の電子部品、又はLAN装置内の電子部品の、60℃、相対湿度60%以上の高温高湿環境下での動作保証が要求される電子部品に使用されるものである請求項1ないし請求項3のいずれか1項に記載の半導体装置。
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