JP2010062395A - 銅ボンディングワイヤ - Google Patents
銅ボンディングワイヤ Download PDFInfo
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- JP2010062395A JP2010062395A JP2008227625A JP2008227625A JP2010062395A JP 2010062395 A JP2010062395 A JP 2010062395A JP 2008227625 A JP2008227625 A JP 2008227625A JP 2008227625 A JP2008227625 A JP 2008227625A JP 2010062395 A JP2010062395 A JP 2010062395A
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- copper
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- bonding
- coating
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Abstract
【解決手段】Clを1ppm以下、Pを10ppm以上、200ppm以下含み、残部Cuと残部不可避不純物とからなる無酸素銅の銅極細線を芯材とし、前記芯材の表面にPd被膜を設け、前記Pd被膜の表面に熱硬化性共重合型ポリイミド樹脂被膜が形成されていることを特徴とする銅ボンディングワイヤ。
【選択図】 図1
Description
しかし、Au線の組成は、99mass%から99.99mass%がAuであるため非常に高価であることから、金線使用量のIOピン数が非常に多いプラスチックボールグリッドアレイパッケージ(Plastic Ball Grid Alley Package、以下PBGAと記す。)や製品価格が安いメモリパッケージでは、細い線径の金線を用いることで、Auの使用量を減らし、そのコストを下げたいとの要望があった。
しかしながら、銅ボンディングワイヤを最新の高集積度半導体パッケージに適用するためには、シリコンチップ上の脆弱なアルミ電極パッドへのダメージを回避する初期銅ボールの軟らかさと、銅ボールとアルミニウム電極との接合界面の腐食を阻止するための銅組成、更には銅ボールとアルミニウム電極との接合界面に生成するアルミニウム銅合金層の酸化を阻止するための初期銅ボールの無酸素化、高集積化により狭まった隣接ワイヤループが樹脂封止時の樹脂流れによって起こる電気的短絡などを解消しなければならなかった。
更に、特許文献3には、Pd被覆銅ボンディングワイヤ表面のPd被覆層と銅芯材との界面での剥離を防止するための方法が開示されており、被膜形成後に熱処理を施して銅パラジウム界面に濃度勾配を設けることが示されている。
又、最終線径まで伸線した後に銅芯材表面へパラジウム被膜を形成し、最終熱処理で拡散層を形成して界面の接合強度を高める方法も提案されている。
このような樹脂封止時のループの接触による電気的短絡防止アイデアとしては、特許文献4及び特許文献5に、ワイヤ表面を電気絶縁性の物質で覆い、仮にループが接触してもワイヤ表面の絶縁性被膜が電気的短絡を回避するいわゆる絶縁ボンディングワイヤが提案されている。
尚、この不可避不純物は、純度99.99%の銅の不可避不純物レベル以下であることが望ましい。又、この銅極細線の製造においては、純度99.99%以上の銅原料を用いて、所定成分組成に溶解鋳造することが好ましく、特には酸素濃度は10ppm以下であると良い。
そのPd被膜の厚みは、5nmから100nmが望ましく、この範囲内では、銅線表面の変色を抑え、ワイヤ先端に溶融形成される銅ボール表面に濃縮するPd層の厚みも薄くなり、チップダメージの損傷を抑えたボールボンディングが可能である。5nm未満では効果がなく、100nmを超える厚みのPd被膜では、銅ボールを形成したときの真球度が低下するためで、望ましくは、10nmから30nmが良く、更に望ましくは10nmから15nmである。
更に、熱硬化性共重合型ポリイミド樹脂に対して、10mass%以下の範囲でポリシロキサンを添加しても良く、この添加された絶縁性被膜は、より高い絶縁性を示すが、10mass%を超えての含有は、ステッチボンディング強度を弱め、銅ボール形成時の真球度が悪化する。
表1に示す芯材成分組成、Pd被膜、絶縁性被膜の組み合わせで被覆した実施例1〜14、比較例1〜25の銅ボンディングワイヤを以下の製造法で作製した。
図1(a)にその断面形状を示す。10aはPd被膜付きの銅ボンディングワイヤ、1は銅極細線、2はPd被膜である。
その断面形状を図1(b)に示す。10bはポリイミド樹脂被覆の銅ボンディングワイヤ、1は銅極細線、2はPd被膜、3は熱硬化性共重合型ポリイミド樹脂被膜である。
ポリイミド樹脂被膜の形成は、熱硬化性共重合型ポリイミド樹脂被膜では、テトラカルボン酸ジ無水物とジアミンとを環化反応させたブロック共重合型ポリイミドを、N−メチルピロリジノンを主とする溶媒に溶解した可溶性ポリイミドインクを用いて行い、熱硬化性変性型ポリイミド樹脂被膜では、ポリイミド分子中にフッ素を含有させて耐熱性を共重合型よりも向上させたポリイミドを、N−メチルピロリジノンを主とする溶媒に溶解した可溶性ポリイミドインクを用いて形成し、熱硬化性共縮合型ポリイミド樹脂被膜では、テトラカルボン酸ジ無水物とジアミンとを脱水縮合反応させて得るポリアミック酸を加熱し形成したポリイミドを、N−メチルピロリジノンを主とする溶媒に溶解した可溶性ポリイミドインクを用いて形成した。
ボールの変形については、ボールの真球度(真円度と偏芯性)が目視観察で明らかに劣るものが1つでも発生した場合を「×」と判断し、発生しない場合を「○」として変形性を記した。
ボールの酸化については、SEM観察によってボール表面に細かい凹凸が形成された場合は「×」と判断し、平滑な表面である場合には「○」と評価した。
又、Pd被膜が剥離せずに芯材の銅極細線を覆っているために、銅ボール形成後の銅ボールの変形や芯ずれも発生せず、その酸化もなく、含まれるPにより銅ボールの表面硬さが硬くならないためにパッドダメージも発生せず、ステッチ接合性も良好で、Cl含有量が1ppm以下であるため湿度を含む信頼性評価においても、銅ボール接合界面の塩素濃化による銅ボール剥がれの発生が無いことがわかる。
Pの含有量が10ppm未満である比較例1、3、6、8、11、12、13、18、19、20及び24は、いずれの場合もPd被膜形成後の伸線工程でPdが剥離して芯材の地肌が露出してしまい、ボールの芯ズレも多発し、ステッチボンディング性も低下している。
一方、Pを200ppmを超えて含有する比較例2、5、7、10、16及び23では、いずれの場合もパッドダメージが観察されている。
19、20、21及び22では、ステッチボンディング性が大きく低下したり、ワイヤボンディングを完全に行ったクロスワイヤー対を用いた絶縁性の評価において、ボンディングワイヤが樹脂被膜にめり込んで発生する絶縁不良が観察されたりしている。
2 Pd被膜
3 絶縁性被膜(熱硬化性共重合型ポリイミド樹脂被膜)
4 内側ループワイヤ
5 外側ループワイヤ
6 テストチップ
7 アルミニウムパッド
8 Auメッキリード
9 抵抗測定器
10a 銅ボンディングワイヤ
10b 銅ボンディングワイヤ(絶縁性樹脂被覆)
20 プラスチック基板
Claims (2)
- Clを1ppm以下、Pを10ppm以上、200ppm以下含み、残部Cuと不可避不純物とからなる無酸素銅の銅極細線を芯材とし、前記芯材の表面にPd被膜が形成されていることを特徴とする銅ボンディングワイヤ。
- Clを1ppm以下、Pを10ppm以上、200ppm以下含み、残部Cuと残部不可避不純物とからなる無酸素銅の銅極細線を芯材とし、前記芯材の表面にPd被膜を設け、前記Pd被膜の表面に熱硬化性共重合型ポリイミド樹脂被膜が形成されていることを特徴とする銅ボンディングワイヤ。
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JP5001455B1 (ja) * | 2011-11-21 | 2012-08-15 | タツタ電線株式会社 | ボンディングワイヤ及びその製造方法 |
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