JP2008153625A - 銅ボンディングワイヤ - Google Patents

銅ボンディングワイヤ Download PDF

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Publication number
JP2008153625A
JP2008153625A JP2007280067A JP2007280067A JP2008153625A JP 2008153625 A JP2008153625 A JP 2008153625A JP 2007280067 A JP2007280067 A JP 2007280067A JP 2007280067 A JP2007280067 A JP 2007280067A JP 2008153625 A JP2008153625 A JP 2008153625A
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Japan
Prior art keywords
copper
bonding wire
wire
oxygen
copper bonding
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Granted
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JP2007280067A
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JP5152897B2 (ja
Inventor
Akira Togashi
亮 富樫
Kenzo Ide
井手兼造
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Sumitomo Metal Mining Co Ltd
Tatsuta Electric Wire and Cable Co Ltd
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Sumitomo Metal Mining Co Ltd
Tatsuta Electric Wire and Cable Co Ltd
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Priority to JP2007280067A priority Critical patent/JP5152897B2/ja
Publication of JP2008153625A publication Critical patent/JP2008153625A/ja
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Publication of JP5152897B2 publication Critical patent/JP5152897B2/ja
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

【課題】 高湿下においてもボール接合部の腐食を抑制することが可能な銅ボンディングワイヤを提供する。
【解決手段】 本発明に係る銅ボンディングワイヤは、グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅からなることを特徴とし、また、本発明に係る他の銅ボンディングワイヤは、グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅鋳造線材を、更に酸洗浄することなく最終線径まで縮径した後、フォーミングガス中で焼鈍したことを特徴とする。
【選択図】 図１

Description

本発明は、半導体素子上の電極と外部電極とを接続するために用いる銅ボンディングワイヤに関するものである。
一般に半導体素子上の電極と外部電極との結線に用いられるボンディングワイヤの直径は１５〜７５μｍと非常に細く、また、化学的な安定性や大気中での取り扱いやすさから、従来は金線が用いられていた。
しかし、金線は重量の９９％から９９．９９％が金であるため非常に高価であることから、材料として安価な銅に替えたいという産業界からの要請があった。
また、半導体素子上の電極材料としてはアルミニウムまたはアルミニウム合金がよく用いられているが、かかるアルミニウム等の表面にボンディングワイヤを接合させることにより生じる金属間化合物の接合面の信頼性を評価したところ、該ボンディングワイヤを構成する金属としては金の方が銅よりも劣化が早いという結果が出ており、このため、ボンディングワイヤと電極材料との接合の信頼性向上のためにも銅線へ替えたいという産業界からの要請もあった。
ボンディングワイヤとして使用される材料を金から銅に替えることによる最大の弊害は、チップクラックの発生率が金よりも銅の方が高くなることである。
このため、かかる弊害を是正すべく、ボールボンディング時に銅線先端に形成されるボール表面の酸化物の発生を防止するため、工業的に入手しやすくかつ純度が９９．９９％以上と比較的高いためにボール硬度も低くなる酸素濃度が１０ｐｐｍ未満の無酸素銅が一般的に使用されている。
例えば、特許文献１には、電解精錬を数回繰り返した後、前記電解精錬により得られた高純度の電気銅を帯域融解法により精製することにより、純度９９．９９９％以上の高純度の銅素材を得ることでチップクラックの発生率を低下させる方法が提案されている。
このように、無酸素銅線の採用や銅の高純度化はボールの軟化を実現し、パッドダメージの大幅な低減に寄与し、パワーＩＣやトランジスタ向けの銅ボンディングワイヤとしての用途へ利用されてきている。
一方、近年急激に生産量が急増しているＰＢＧＡ（Plastic Ball Grid Array package）やＱＦＮ（Quad Flat Non lead package）等の半導体パッケージに対する銅ボンディングワイヤの適用に向けた評価が開始されてきている。
ところが、これらの半導体パッケージについてＰＣＴ（Pressure Cooker Test）を行ったところ、ボール接合部が腐食され、電気的絶縁となる不具合が露見した。
より詳細には、銀メッキされたリードフレームへ、高純度アルミニウムを蒸着したシリコンチップをダイボンディングし、アルミニウムと銀メッキリードとの間を従来使用されている各社の４Ｎ純度の銅ボンディングワイヤにてワイヤボンディングし、これを樹脂封止せずに８５℃８５％の恒温恒湿環境で放置したところ、いずれのワイヤも１６８時間までの放置によってボール接合部が腐食され、シア強度測定試験においてボールが腐食面で剥がれてしまうという現象が観察された。
これは、いずれの半導体パッケージも片側樹脂封止であり、リードと樹脂の隙間から水分がパッケージ内に浸入したためと考えられる。
特開昭６０−２４４０５４号公報
このため、本発明者らは、かかる弊害を是正するために鋭意検討した結果、腐食してボールが剥がれた部分のアルミパッド面とボール裏面についてＥＰＭＡ(電子プローブエックス線マイクロアナライザ)によって元素定性分析を行ったところ、いずれの試料からも塩素が検出されたことから、かかる銅ボンディングワイヤ中に存在する塩素が水分との反応によって銅線中から溶出することで、ボール接合部が腐食し、これが電気的絶縁の原因であることを見出し、本発明を採用するに至った。
即ち、本発明が解決しようとする課題は、高湿下においてもボール接合部の腐食を抑制することが可能な銅ボンディングワイヤを提供することにある。
上記課題を解決するために、本発明に係る銅ボンディングワイヤは、グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅からなることを特徴とするものである。
また、本発明に係る他の銅ボンディングワイヤは、グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅鋳造線材を、更に酸洗浄することなく最終線径まで縮径した後、フォーミングガス中で焼鈍したことを特徴とするものである。
本発明に係る銅ボンディングワイヤによれば、銅ワイヤに含有される或いは表面に付着する塩素濃度が低いため、高湿下でもボール接合界面の腐食が抑制される。そのため、ＰＢＧＡやＱＦＮといった水分が浸入しやすい片側樹脂封止のパッケージにおいても、ボール接合界面の信頼性が高まり、銅ボンディングワイヤの適用が可能となる。
以下、本発明に係る銅ボンディングワイヤについて説明する。
［実施例及び比較例］
表１は本発明の実施例と、現在市場で使用されている従来品無酸素銅線との比較とを示す。
塩素量および総不純物量は、直径３０μｍのワイヤ試料をアルミニウム製キャップに挿入して２０ｔプレスを行い平板状にしたものを測定試料とし、測定前に装置内で約１時間の予備放電を行い、試料表面を数ミクロン程度除去した後、該除去面をグロー放電質量分析法にて測定した。総不純物量はグロー放電質量分析法によって検出限界以上で検出された各元素の検出量の総和とした。
試料番号１から３は、真空溶解連続鋳造炉において、カーボンルツボ内に原料銅を入れ、真空度１×１０−４Ｐａ以下で高周波溶解し、溶湯温度１１５０℃以上、保持時間１０分以上で十分に脱ガスした後、不活性ガスで大気圧に戻し、連続鋳造によって８ｍｍφに鋳造されたグロー放電質量分析法による塩素量が１ｐｐｍ以下で総不純物量の異なる無酸素銅鋳造線材を、酸洗浄無しに縮径して直径３０μｍとし、５％水素９５％窒素のフォーミングガス中で焼鈍して伸び率を１３から１４％に調整した銅ボンディングワイヤである。
尚、本発明において用いられる無酸素銅鋳造線材の塩素量についても１ｐｐｍ以下とすることが必要である。該無酸素銅鋳造線材の塩素量が１ｐｐｍを超えてしまうと、その後、塩素量を増やさないように幾ら酸洗浄を施さないようにしたとしても、（脱塩素処理等の特別な処理を施さない限り、）得られた銅ボンディングワイヤ中に存在する塩素量が１ｐｐｍを超えてしまうこととなるからである。
従って、本発明に係る銅ボンディングワイヤにあっては、酸洗浄等の塩素量を増やす処理は不適である。
試料番号４は上記連続鋳造によって鋳造されたグロー放電質量分析法による塩素量が約３ｐｐｍの無酸素銅鋳造線材を、縮径工程の途中で塩酸洗浄と純水洗浄を行った後に再度縮径して直径３０μｍとし、５％水素９５％窒素のフォーミングガス中で焼鈍して伸び率を１４％に調整した銅ボンディングワイヤである。
試料番号５と６は上記連続鋳造によって鋳造されたグロー放電質量分析法による塩素量が約２ｐｐｍの無酸素銅鋳造線材を、塩酸洗浄と純水中超音波洗浄を行った後に再度縮径して直径３０μｍとし、５％水素９５％窒素のフォーミングガス中で焼鈍して伸び率を１４％に調整した銅ボンディングワイヤである。
試料番号７は上記連続鋳造によって鋳造されたグロー放電質量分析法による塩素量が約１ｐｐｍの無酸素銅線材を、縮径工程の途中で塩酸洗浄と純水中超音波洗浄を行った後に再度縮径して直径３０μｍとし、５％水素９５％窒素のフォーミングガス中で焼鈍して伸び率を１４％に調整した銅ボンディングワイヤである。
腐食発生率については、図１に示すように、銀メッキされたリードフレーム４へ、高純度アルミニウムを蒸着したシリコンチップ２をダイボンディングし、アルミニウムと銀メッキリード３との間を銅ボンディングワイヤ１にてワイヤボンディングし、これを樹脂封止せずに８５℃８５％の恒温恒湿環境で放置し、１２０時間後と１９２時間後にボールシア強度測定試験を行い、ボールとアルミニウム電極との界面を光学顕微鏡で観察して腐食の有無を調査し、発生した腐食ボール個数をボールシア測定個数で除したものを腐食発生率とした。
尚、ワイヤボンディング前にシリコンチップ付きリードフレームはアルゴン・窒素雰囲気で２分間のプラズマ洗浄を行い、表面の清浄化をおこなった。
その結果、比較例では、８５℃８５％の恒温恒湿環境の１９２時間までの放置後のボールシア強度測定時において、ボール接合部の腐食の発生によるボールはがれが観察されたが、実施例では、腐食によるボールはがれは全く観察されなかった。
Figure 2008153625
本発明に係る銅ボンディングワイヤによれば、グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下であり、水分との反応によって銅線中から溶出する塩素量が低いため、ボール接合部の腐食への影響が抑制され、ＰＣＴでのボール接合部の電気的絶縁問題が解消されるので、産業上の利用価値は多大である。
本発明に係る銅ボンディングワイヤを用いた半導体パッケージの正面図である。
符号の説明
１：銅ボンディングワイヤ
２：アルミニウム蒸着シリコンチップ
３：銀メッキリード
４：リードフレーム

Claims (2)

  1. グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅からなることを特徴とする銅ボンディングワイヤ。
  2. グロー放電質量分析法によって検出される塩素量が１質量ｐｐｍ以下の無酸素銅鋳造線材を、更に酸洗浄することなく最終線径まで縮径した後、フォーミングガス中で焼鈍したことを特徴とする銅ボンディングワイヤ。
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JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2011003745A (ja) * 2009-06-18 2011-01-06 Sumitomo Metal Mining Co Ltd Ｃｕボンディングワイヤ
JP2012222194A (ja) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2013522456A (ja) * 2010-03-05 2013-06-13 シュトゥート テオドア ニッケル帯状物の製造法
CN103295977A (zh) * 2008-10-10 2013-09-11 住友电木株式会社 半导体装置

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JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
CN103295977A (zh) * 2008-10-10 2013-09-11 住友电木株式会社 半导体装置
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JP2013522456A (ja) * 2010-03-05 2013-06-13 シュトゥート テオドア ニッケル帯状物の製造法
JP2012222194A (ja) * 2011-04-11 2012-11-12 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ

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