JPS6278862A - 半導体素子のボンデイング用銅線 - Google Patents

半導体素子のボンデイング用銅線

Info

Publication number
JPS6278862A
JPS6278862A JP60218417A JP21841785A JPS6278862A JP S6278862 A JPS6278862 A JP S6278862A JP 60218417 A JP60218417 A JP 60218417A JP 21841785 A JP21841785 A JP 21841785A JP S6278862 A JPS6278862 A JP S6278862A
Authority
JP
Japan
Prior art keywords
bonding
copper
copper wire
wires
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60218417A
Other languages
English (en)
Other versions
JPH0587017B2 (ja
Inventor
Sukehito Iga
祐人 伊賀
Kenichi Kurihara
健一 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP60218417A priority Critical patent/JPS6278862A/ja
Publication of JPS6278862A publication Critical patent/JPS6278862A/ja
Publication of JPH0587017B2 publication Critical patent/JPH0587017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45694—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/456 - H01L2224/45691
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本願は半導体のチップ電極と外部リード部とを接続する
ために使用する半導体素子のボンディング用銅線の発明
に関するものである。
（従来の技術とその問題点） 従来、半導体素子とリードフレームとは、アルミスプー
ルに巻取られたＡｕ線を用いて熱圧着又は超音波熱圧６
法にてワイヤボンディングが施されているが、最近、金
線の代特として経済性に右利な銅線の使用が検討されて
いる。
ところが、銅線は酸化を起しやすく、ボール形成時に硬
くなる欠点があるため保管が非常に困難であった。
さらに、スプールに巻取られたワイヤー同志がからみ、
使用時において切断してしまうという欠点があった。
（発明が解決しようとする技術的課題）以上の問題を解
決するための本発明の技術的課題は、ボンディング用銅
線の酸化及びワイヤー同志のからみを防止することであ
る。
（技術的課題を達成するための技術的手段）以上の技術
的課題を達成するための本発明の技術的手段は、銅の表
面にアルカリ、ハロゲン系元素の含有量が１１）ＤＩｌ
＋以下の非イオン系或いは多価アルコール、エステル界
面活性剤を浸漬或いはワイピング法等によりコーティン
グし、膜厚平均が２０〜５００Ａ　’の界面活性被膜を
形成することであり、膜厚が２０△°未満だと酸化防止
に効果がなく、５００Δ°を超えるとボール形状が極め
て不良になってボンディング不良が生ずる。（発明の効
果） 本発明は以上の様な構成にしたことにより、ボンディン
グ用銅線の酸化及び銅線同志のからみを防止することが
でき、ざらにボール形状が極めて良好になってボンディ
ング強度の向上を図ることができる。
（実施例） 本発明の実流量は、９９．９９ｗｔ％の高純度銅に線引
加工と中間処理とをくり返して直径３０μのＣＵ線に仕
上げ、それに半導体素子そのものに悪影響を及ぼざない
アルカリ、ハロゲン系元素の含有量が１１）Ｉ）ＩＩＩ
以下の界面活性剤をコーティングしたものであり、比較
量は９９．９９ｗｔ％の高Ｉｉｌ！度銅にコーティング
を施さないものである。
各試料の膜厚を次表（１）に示す。
表（１） この結果、銅の表面にアルカリ、ハロゲン系元素の含有
量が１ρρｌ以下の非イオン系或いは多価アルコール、
エステル界面活性剤をコーティングし、その膜厚平均が
２０〜５００Ａ　”界面活性被膜を形成することにより
、上記効果を有することを確認できた。

Claims (1)

    【特許請求の範囲】
  1. 銅の表面にアルカリ、ハロゲン系元素の含有量が１ｐｐ
    ｍ以下の非イオン系或いは多価アルコールエステル界面
    活性剤をコーティングし、膜厚平均が２０〜５００Ａ°
    の界面活性被膜を形成したことを特徴とする半導体素子
    のボンディング用銅線。
JP60218417A 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線 Granted JPS6278862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60218417A JPS6278862A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60218417A JPS6278862A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Publications (2)

Publication Number Publication Date
JPS6278862A true JPS6278862A (ja) 1987-04-11
JPH0587017B2 JPH0587017B2 (ja) 1993-12-15

Family

ID=16719585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60218417A Granted JPS6278862A (ja) 1985-09-30 1985-09-30 半導体素子のボンデイング用銅線

Country Status (1)

Country Link
JP (1) JPS6278862A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294534A (ja) * 1988-09-30 1990-04-05 Tanaka Electron Ind Co Ltd 半導体素子のボンディング用金極細線
JPH03165044A (ja) * 1989-11-22 1991-07-17 Tanaka Denshi Kogyo Kk 被覆線
JP2008153625A (ja) * 2006-11-21 2008-07-03 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP2014045227A (ja) * 2013-12-11 2014-03-13 Nippon Micrometal Corp ボンディングワイヤ及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167044A (ja) * 1983-03-11 1984-09-20 Mitsubishi Metal Corp 半導体装置のワイヤ・ボンデイング用金または金合金細線
JPS60124959A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167044A (ja) * 1983-03-11 1984-09-20 Mitsubishi Metal Corp 半導体装置のワイヤ・ボンデイング用金または金合金細線
JPS60124959A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294534A (ja) * 1988-09-30 1990-04-05 Tanaka Electron Ind Co Ltd 半導体素子のボンディング用金極細線
JPH03165044A (ja) * 1989-11-22 1991-07-17 Tanaka Denshi Kogyo Kk 被覆線
US8004094B2 (en) 2006-08-31 2011-08-23 Nippon Steel Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
US8610291B2 (en) 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP2008153625A (ja) * 2006-11-21 2008-07-03 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2014045227A (ja) * 2013-12-11 2014-03-13 Nippon Micrometal Corp ボンディングワイヤ及びその製造方法

Also Published As

Publication number Publication date
JPH0587017B2 (ja) 1993-12-15

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