JPS6356303B2 - - Google Patents

Info

Publication number
JPS6356303B2
JPS6356303B2 JP16924085A JP16924085A JPS6356303B2 JP S6356303 B2 JPS6356303 B2 JP S6356303B2 JP 16924085 A JP16924085 A JP 16924085A JP 16924085 A JP16924085 A JP 16924085A JP S6356303 B2 JPS6356303 B2 JP S6356303B2
Authority
JP
Japan
Prior art keywords
bonding
wire
wires
oxide film
spool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16924085A
Other languages
English (en)
Other versions
JPS6230359A (ja
Inventor
Hiroshi Ikeda
Naoyuki Hosoda
Toshiaki Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP60169240A priority Critical patent/JPS6230359A/ja
Publication of JPS6230359A publication Critical patent/JPS6230359A/ja
Publication of JPS6356303B2 publication Critical patent/JPS6356303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
〔産業上の利用分野〕 この発明は、CuまたはCu合金製極細線からな
り、これをスプールに巻いて使用した場合に相互
密着の発生がない半導体装置用ボンデイングワイ
ヤに関するものである。 〔従来の技術〕 一般に、半導体装置としてトランジスタやIC、
さらにLSIなどが知られており、これら半導体装
置の製造にボンデイングワイヤが用いられてい
る。 このボンデイングワイヤは、例えば高純度Siか
らなる半導体チツプとCu合金製リードフレーム
とに渡つて結線するために用いられるもので、主
としてAu製極細線が使用されてきたが、近年、
この高価なAu製極細線に代つて安価なCuまたは
Cu合金製極細線を用いる試みがなされるように
なつてきている。 一方、ボンデイングワイヤは、スプールに巻か
れて使用されるが、生産性の向上をはかる目的
で、その巻き量は長尺化の傾向にあり、例えば直
径：25μmの極細線で、直径：2in×長さ：2inの
スプールに500m以上巻くことが要望されている。 〔発明が解決しようとする問題点〕 しかし、このように長尺の500m以上の長さの
極細線をスプールに巻く場合、その巻き方は、３
〜８mmピツチのクロス巻きが主流となり、かつ巻
き上り後の線ずれを防止するために、どうしても
適当なテンシヨン（２〜4gの荷重に相当）をか
けながら多層に巻かざるを得ないことから、特に
CuまたはCu合金製極細線の場合には、重なり合
つた線同志が密着し、この結果ボンデイング時の
繰り出しに際して、線がひつかかつて、ワイヤ切
れを起すなどの問題が生じるものであつた。 〔問題点を解決するための手段〕 そこで、本発明者等は、上述のような観点か
ら、上記のような従来CuまたはCu合金製極細線
からなる半導体装置用ボンデイングワイヤのもつ
問題点を解決すべく研究を行なつた結果、Cuま
たはCu合金製極細線の表面に50〜300Åの平均層
厚で酸化膜を形成してやると、これをスプールに
巻いてボンデイングワイヤとして使用した場合
に、表面に形成した酸化膜によつて線同志の密着
がなくなることから、スムーズな繰り出しが可能
となり、ワイヤ切れの発生が皆無となるという知
見を得たのである。 したがつて、この発明は、上記知見にもとづい
てなされたものであつて、表面に平均層厚：50〜
300Åの酸化膜を形成したCuまたはCu合金製極細
線で構成された半導体装置用ボンデイングワイヤ
に特徴を有するものである。 なお、この発明のボンデイングワイヤにおい
て、酸化膜の平均層厚を50〜300Åと定めたのは、
その平均層厚が50Å未満では所望の密着防止効果
を得ることができず、一方その平均層厚が300Å
を越えると、ボンデイング時に酸化膜が原因の接
着不良（ボンデイング不良）を起すようになると
いう理由にもとずくものである。 〔実施例〕 つぎに、この発明のボンデイングワイヤを実施
例により具体的に説明する。 それぞれ第１表に示される成分組成をもつた直
径：25μmのCuおよびCu合金製極細線を用意し、
これら極細線に、酸素含有のArガス雰囲気中に
て第１表に示される条件で連続酸化処理を施し、
もつて
〔発明の効果〕
第１表に示される結果から明らかなように、本
発明ボンデイングワイヤ１〜９は、いずれもスプ
ールにおけるワイヤ同志の密着がないので、ボン
デイング時のワイヤの繰り出しがスムーズで、こ
の結果ワイヤ切れの発生が皆無であり、ボンデイ
ング部の接合性も良好で何ら問題がないのに対し
て、比較ボンデイングワイヤ１〜４に見られるよ
うに、酸化膜の厚みが平均層厚で300Åを越える
と、スプールにおける密着はないが、ボンデイン
グ部に接合不良が起り易くなり、一方酸化膜の厚
みが同50Å未満では、ボンデイング部の接合性は
良好であるが、スプールにおいてワイヤ同志に密
着が起り、ボンデイング時にワイヤ切れが発生す
るようになるものであつた。 上述のように、この発明の半導体装置用ボンデ
イングワイヤは、表面に酸化膜を形成したCuま
たはCu合金製極細線で構成されているので、ス
プールに巻かれた時に前記酸化膜によつてワイヤ
同志に密着現象が起ることがなく、したがつてボ
ンデイング時におけるワイヤのスムーズな繰り出
しが可能となることから、ワイヤ切れの発生が皆
無となり、さらにボンデイング部の接合性も良好
で、何ら問題はなく、かつ安価であるなど工業上
有用な効果をもたらすものである。

Claims (1)

    【特許請求の範囲】
  1. １ 表面に平均層厚：50〜300Åの酸化膜を形成
    したCuまたはCu合金製極細線で構成されたこと
    を特徴とする半導体装置用ボンデイングワイヤ。
JP60169240A 1985-07-31 1985-07-31 半導体装置用ボンデイングワイヤ Granted JPS6230359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60169240A JPS6230359A (ja) 1985-07-31 1985-07-31 半導体装置用ボンデイングワイヤ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60169240A JPS6230359A (ja) 1985-07-31 1985-07-31 半導体装置用ボンデイングワイヤ

Publications (2)

Publication Number Publication Date
JPS6230359A JPS6230359A (ja) 1987-02-09
JPS6356303B2 true JPS6356303B2 (ja) 1988-11-08

Family

ID=15882837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60169240A Granted JPS6230359A (ja) 1985-07-31 1985-07-31 半導体装置用ボンデイングワイヤ

Country Status (1)

Country Link
JP (1) JPS6230359A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100050366A (ko) * 2008-11-04 2010-05-13 삼성전자주식회사 표면 탄성파 소자, 표면 탄성파 장치 및 이들의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104462A (en) * 1979-02-01 1980-08-09 Mitsubishi Metal Corp Oxygen-free copper wire base material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104462A (en) * 1979-02-01 1980-08-09 Mitsubishi Metal Corp Oxygen-free copper wire base material

Also Published As

Publication number Publication date
JPS6230359A (ja) 1987-02-09

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