JPS583239A - ボンデイング用ワイヤ− - Google Patents

ボンデイング用ワイヤ−

Info

Publication number
JPS583239A
JPS583239A JP56101779A JP10177981A JPS583239A JP S583239 A JPS583239 A JP S583239A JP 56101779 A JP56101779 A JP 56101779A JP 10177981 A JP10177981 A JP 10177981A JP S583239 A JPS583239 A JP S583239A
Authority
JP
Japan
Prior art keywords
wire
bonding
substrate
bonding wire
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56101779A
Other languages
English (en)
Inventor
Toshio Kano
蚊野　利雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56101779A priority Critical patent/JPS583239A/ja
Publication of JPS583239A publication Critical patent/JPS583239A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Insulated Conductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、半導体装置の結線に使用するボンディング用
ワイヤーに係わる。
本発明の目的は、半導体装置基板のエツジにボンディン
グ用ワイヤーが接触し、電気的シ曹−トとなることを防
止することにある。
近年、半導体装置、特に該半導体装置が智数個同−基板
に形成された集積回路装置においては、実装する際の、
ボンディング用パッドは増々、多くなって来ており、６
０ビン程度も珍らしくなくなっている。このような多ビ
イの集積回路装置において、ボンディングを行なう際、
一般的には、一つの問題が生じ易い、この点について、
図面←より説明すれば、第１図において、半導体基板１
上のポンディングパッドから、金線を使用し、結線を行
なう場合、熱圧着により形成した圧着部２から、金線３
が引出された形になり、基板パッド部と連結されること
になるが、この際、半導体基板のエツジ部人において、
該金ＩＩａ３がたわみ、接触することがしばしば見られ
る。このような状態になれば、半導体の基板とワイヤー
がシ璽−トし、電気的特性は不良となる。特に前述した
ように、パッド数が増えれば増える程、このシ璽−トに
なる確率は高くなり、いわゆる実装歩留りは低くなりて
しまう、これは、半導体装上の大きな欠点ともなってい
る。
本発明は上記の欠点を解決したもので、ボンディングワ
イヤーが半導体装置のエツジ部でシ叢−卜することを防
止した、ボンディングワイヤーを提供し声ものである。
本発明を実施例により説明すれば、第２図において、本
発明によるボンディング用ワイヤーの断面外観面を示す
が、従来の直径を有するＳＯμφの金線４の外層を１ｊ
ｌ厚のぎりエチレン被覆を行なったものである。
本発明による上記ボンディング用ワイヤーを使用し、半
導体集積回路の実装に応用した。第２図において、半導
体集積回路装置基板６上のポンディングパッド上にオー
トワイヤーボンダーにより、本発明によるボンディング
用ワイヤーを使用し、ボンディングした結果、熱圧着部
７から絶縁被覆された金線８が引出された形となる。こ
こで仮に図示の如く、半導体基板６のエツジ部と接触し
たとしても、電気的シ■−トとはならず、モールドその
他の実装後においても、不良は皆無であった。
特に、多ビン実装の面で効果が大きく、実装歩留りの著
しい向上をもたらしたものである。
なお、上記実施例では、ボンディング用ワイヤーとして
、金線を例にとり説明したが、銀を含んだもの、あるい
はアルミ線でありても同様な効果が得られることはもち
ろんであり、何ら本発明の目的を逸脱するものではない
。
又、ワイヤーの被覆材料についても、絶縁物であれば、
同一の効果が得られ、その厚みについては、１〜５μ程
度が理想的である。
さらに、上記被覆材は、熱により溶解もしくは蒸発する
ものであれば、特に水素トーチによる金線の溶断を利用
したボンディング方法には、より一層効果が大きく、ボ
ンディング強度についても全く差は見られなかった。
【図面の簡単な説明】
第１図は、従来のボンディングワイヤーを使用した、メ
ンディング状態を示す断面略図、第２ＷＪは、本発明に
よるボンディングワイヤーの断面外観略図、第５図は、
本発明によるボンディングワイヤーを使用したポンディ
゛ング状態を示す断面略図をそ、れぞれ示す。 １．６・・・・・・半導体装置基板 ２．７・・・・・・熱圧着部 ３．８・・・・・・ボンディングワイヤー４・・・・・
・・・・・・・金線 ５・・・・・・・・・・・・絶縁被覆膜以　　上 出願人　　株式会社諏訪精工舎 代理人　　弁理士　最上　　務 ′ｉ４１図　　（ 第３図

Claims (2)

    【特許請求の範囲】
  1. （１）　　半導体装置を基板に実装するに際し、半導体
    装置上のポンディングパッドと、基板上のパッドとの間
    を連結するためのボンディング用ワイヤーにおいて、該
    ボンディング用ワイヤーの表面が、絶縁物質に覆われて
    いることを特徴とするボンディング用ワイヤー。
  2. （２）絶縁物質が、熱により、溶堺もしくは蒸発するこ
    とを特徴とする特許請求の範囲第１項記載のボンディン
    グ用ワイヤー。
JP56101779A 1981-06-29 1981-06-29 ボンデイング用ワイヤ− Pending JPS583239A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56101779A JPS583239A (ja) 1981-06-29 1981-06-29 ボンデイング用ワイヤ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101779A JPS583239A (ja) 1981-06-29 1981-06-29 ボンデイング用ワイヤ−

Publications (1)

Publication Number Publication Date
JPS583239A true JPS583239A (ja) 1983-01-10

Family

ID=14309676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101779A Pending JPS583239A (ja) 1981-06-29 1981-06-29 ボンデイング用ワイヤ−

Country Status (1)

Country Link
JP (1) JPS583239A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200514A (ja) * 1988-02-04 1989-08-11 Mitsubishi Metal Corp 半導体素子ボンディング用絶縁被覆金または金合金極細線
US5396104A (en) * 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device
US5415922A (en) * 1990-03-23 1995-05-16 Texas Instruments Incorporated Resin-coated bonding device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200514A (ja) * 1988-02-04 1989-08-11 Mitsubishi Metal Corp 半導体素子ボンディング用絶縁被覆金または金合金極細線
US5396104A (en) * 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device
US5415922A (en) * 1990-03-23 1995-05-16 Texas Instruments Incorporated Resin-coated bonding device

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