JPH02280366A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH02280366A
JPH02280366A JP1102841A JP10284189A JPH02280366A JP H02280366 A JPH02280366 A JP H02280366A JP 1102841 A JP1102841 A JP 1102841A JP 10284189 A JP10284189 A JP 10284189A JP H02280366 A JPH02280366 A JP H02280366A
Authority
JP
Japan
Prior art keywords
die pad
upper face
semiconductor device
wire
gold wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1102841A
Other languages
English (en)
Inventor
Norio Koutou
杭東　詔夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1102841A priority Critical patent/JPH02280366A/ja
Publication of JPH02280366A publication Critical patent/JPH02280366A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、リードフレームを有するパッケージの半導体
装置に関する。
従来の技術 従来のダイパットを有するリードフレームを利用したプ
ラスチックパッケージ式の半導体装置では、第４図に示
すように、リードフレームのダイパット１に半導体素子
のチップ４を銀ペースト５や金−シリコン共晶法にて接
着し、金線６をリードフレームのインナーリード３に接
続していた。
発明が解決しようとする課題 ところで、上記方法は、最も簡素で一般的であるが、近
年チップサイズが小さくなり、また多ビン化の方向にな
るにつれ、チップ４とリードフレームのインナーリード
３とを結ぶ金線６の長さがダイパット１とインナーリー
ド３との間の間隔に比べて長くなってきた。金線６が長
くなると金線６が垂れてダイパット１に接触してショー
ト不良になることが多くあった。
金線６の垂れを少なくする方法として、金線６のループ
高さを高くする方法があるが５ループを高くすると、樹
脂封止時に樹脂が金線６を押し倒してループ変形が生じ
やすくなり、インナーリード３間のショート不良が発生
する。
本発明は上記問題を解決するもので、ショート不良を生
じることのない半導体装置を提供することを目的とする
ものである。
課題を解決するための手段 上記問題を解決するために本発明は、チップを搭載する
リードフレームのダイパットの上面周辺部に絶縁シート
や絶Ｒ塗料からなる絶縁材を設けたものである。
作用 上記構成により、ダイパットの上面周辺部が絶縁材によ
り絶縁されているため、チップからインナーリードにボ
ンディングした金線が垂れてダイパット上の絶縁材に接
触しても、金線とダイパットとは電気的に絶縁された状
態に保たれ、ショート不良は生じなくなる。
実施例 以下、本発明の一実施例を図面に基づき説明する。
第１図は本発明の一実施例を示す半導体装置の断面図、
第２図および第３図は同半導体装置のリードフレームの
平面図および断面図であり、従来のものと同じ部材には
同一番号を付し、第１図〜第３図において、ＱＦＰ１０
０ピン型パッケージの半導体装置の場合について説明す
る。第１図〜第３図に示すように、鉄−ニッケル（４２
７０イ）製のリードフレームのサイズ８．５　Ｘ　８．
５ｍｍのダイパット１における上面周辺部には、ポリイ
ミド製の絶縁テープ２が、内寸７．ＯＸ　７．Ｏｍ、外
寸８．８Ｘ８．８ｍｍの額縁状に切断されてアクリル系
接着剤を介して接着されている。ダイパット１の上面中
央部には銀ペースト５がデイスペンサにて塗布され、チ
ップサイズ６．５Ｘ６．５ｎｗａのシリコンチップ４が
ダイボンドされている。シリコンチップ４のボンディン
グパットとインナーリード３とは直径３５μｍ、長さ３
．３ｍｍの金線６により接続されている。
上記構成において、金線６はダイパット１の上面周辺箇
所に垂れて接触することがあるが、この箇所には絶縁テ
ープ２が設けられているため、金線６とダイパット１と
のショート不良は生じない。
発明の効果 以上のように、本発明によれば、ダイパット上面の周辺
部を絶縁材によって絶縁することにより、ワイヤーボン
ドの金線が垂れてダイパットに接触しても電気的なショ
ート不良とはならない。これにより、半導体装置の信頼
性が向上する。
【図面の簡単な説明】
第１図は本発明の一実施例を示す半導体Ｍｌｌの断面図
、第２図および第３図は同半導体装置のリードフレーム
の平面図および断面図、第４図は従来の半導体装置を示
す断面図である。 １・・・ダイパット、２・・・絶縁テープ、３・・・イ
ンナーリード、４・・・シリコンチップ、６・・・金線
。 代理人　　　森　　本　　義　　弘 インチ一り−Ｖ゛ り 第４図

Claims (1)

    【特許請求の範囲】
  1. １、チップを搭載するリードフレームのダイパットの上
    面周辺部に絶縁材を設けた半導体装置。
JP1102841A 1989-04-20 1989-04-20 半導体装置 Pending JPH02280366A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1102841A JPH02280366A (ja) 1989-04-20 1989-04-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1102841A JPH02280366A (ja) 1989-04-20 1989-04-20 半導体装置

Publications (1)

Publication Number Publication Date
JPH02280366A true JPH02280366A (ja) 1990-11-16

Family

ID=14338199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1102841A Pending JPH02280366A (ja) 1989-04-20 1989-04-20 半導体装置

Country Status (1)

Country Link
JP (1) JPH02280366A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030075788A (ko) * 2002-03-20 2003-09-26 세미웰반도체 주식회사 반도체 패키지 구조

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030075788A (ko) * 2002-03-20 2003-09-26 세미웰반도체 주식회사 반도체 패키지 구조

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