EP2980870B1 - Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent - Google Patents

Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent Download PDF

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Publication number
EP2980870B1
EP2980870B1 EP14772962.8A EP14772962A EP2980870B1 EP 2980870 B1 EP2980870 B1 EP 2980870B1 EP 14772962 A EP14772962 A EP 14772962A EP 2980870 B1 EP2980870 B1 EP 2980870B1
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Prior art keywords
light
transmissive
layer
elastomer
emitting device
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EP14772962.8A
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German (de)
English (en)
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EP2980870A1 (fr
EP2980870A4 (fr
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Keiichi MAKI
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Toshiba Hokuto Electronics Corp
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Toshiba Hokuto Electronics Corp
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Priority to EP17198835.5A priority Critical patent/EP3321982B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the light-emitting device (or an apparatus including it) is characterized in that the sandwiching of a light-transmissive elastomer between an LED chip and a light-transmissive electroconductive layer, followed by hot pressing under vacuum, is effective for improving the adhesion between the light-transmissive elastomer and the transparent electroconductive member and preventing the occurrence of crack or breakage in the light-transmissive electroconductive layer, and also for partial intrusion of the elastomer between the electrode surface of the LED and the light-transmissive electroconductive layer to enhance the mechanical junction by the elastomer therebetween.
  • Luminescent devices of embodiments are described in more detail with reference to drawings. A light-emitting device of a first embodiment is described first.
  • the light-transmissive elastomer layer 30 also fills up a gap space or crevice gap 48 formed between concavities 46 of the surface unevenness 45 of the electrode layer 15 of the LED chip 10 and the surface 26 of the light-transmissive electroconductive layer 25A of the light-transmissive electroconductive member 20A.
  • FIGS. 6B and 6C represent atomic percentages of elements C (carbon) and Sn (tin), respectively, on the observed face.
  • Figs. 6A - 6C can be observed as color pictures and the atomic % can be recognized not by a gray scale but as a color change, at the time of actual measurement.
  • the region where much carbon is observed with almost no tin on the first electrode layer 15A of the LED chip 10 represents a region (region b) where the light-transmissive elastomer layer 30 enters between the first electrode layer 15A of the LED chip 10 and the first light-transmissive electroconductive layer 25A to mechanically join the first electrode layer 15A and the first light-transmissive electroconductive layers 25A of the LED chip 10.
  • region b where the light-transmissive elastomer layer 30 enters between the first electrode layer 15A of the LED chip 10 and the first light-transmissive electroconductive layer 25A to mechanically join the first electrode layer 15A and the first light-transmissive electroconductive layers 25A of the LED chip 10.
  • the elastomer used for the light-transmissive elastomer layer 30 does not melt at the Vicat softening temperature, and shows a tensile storage modulus at the Vicat softening temperature of at least 0.1 MPa, and a melting temperature which is at least 180 °C, more preferably 200 °C or more, or is higher than Vicat softening temperature by at least 40 °C, more preferably by 60 °C or more.
  • the glass transition temperature of the elastomer used for the light-transmissive elastomer layer 30 is preferably at most -20 °C, more preferably - 40 °C or below.
  • An elastomer is an elastic polymer material and is a resin.
  • the elastomer used here is a thermoplastic elastomer as is understood from the fact that it has a Vicat softening temperature. It is a polymer which shows rubber elasticity, e.g. around room temperature and shows thermoplasticity at higher temperatures.
  • Thermoplastic elastomer can be of a type which is polymerized on temperature increase up to a curing temperature and has thermoplasticity thereafter.
  • thermoplastic elastomer sheet in a state of being inserted between the LED chip electrode and the electroconductive layer is subjected to a vacuum press at a temperature which is equivalent to or slightly above the Vicat softening point and below the melting temperature, thereby deforming the elastomer sheet without causing excessive plasticity or flowing to fill the gaps between the LED chip electrode and the electroconductive layer and improve the bonding (peeling prevention) and electric connection between the LED chip electrode and the electroconductive layer.
  • a production process for the light-emitting device 1 ( Fig. 1 ) is explained with reference to Fig. 7 .
  • a light-transmissive-elastomer sheet 35 of a predetermined thickness is disposed, and thereon, a light-transmissive electroconductive member 20A is disposed at a predetermined position while directing its light-transmissive electroconductive layer 25A downward.
  • the light-transmissive-elastomer sheet has a shape which covers the entirety of the light-transmissive electro-conductive layer 25A. The above-described order of lamination can be reversed upside down.
  • the resultant laminate is subjected to a preliminary press, and the working environment is made vacuum.
  • pressing is performed for a predetermined period of, e.g. 20 to 60 minutes while heating the laminate.
  • the heating temperature for the vacuum hot pressing is, e.g. usually 80-180 °C, preferably 100-160 °C.
  • the degree of vacuum (absolute pressure) for the vacuum hot pressing is, e.g. usually at most 10 kPa, preferably 5 kPa or less.
  • the pressure applied for the vacuum hot pressing is, e.g. usually 0.5 - 20MPa (5 - 200 kgf/cm 2 ), preferably 0.6 - 12MPa (6 - 120 kgf/cm 2 ).
  • the crevice space or gap 48 ( Fig. 2 ) between the surface of the electrode layer 15 (15A, 15B) of the LED chip 10 and the light-transmissive electroconductive layer 25 (25A, 25B) of the light-transmissive electroconductive member 20 (20A, 20B) is filled up with the light-transmissive elastomer layer 30 formed with the softened elastomer sheets 35, so that the occurrence of crack and fracture of the light-transmissive electroconductive layer 25 of the light-transmissive electroconductive member 20 possibly caused by the thrusts from the convexities of the unevenness 45 on the surface of the electrode layer 15 (15A, 15B) of the LED chip 10, is suppressed.
  • the resultant light-emitting device 1 hardly causes a fatal crack when it is severely bent and, even if a crack arises, a lighting state can be maintained, since the light-transmissive resin binder maintains the electric connection of the light-transmissive electroconductive layer.
  • the local intrusion or penetration of the light-transmissive elastomer layer 30 between the electrode layer 15 of the LED chip 10 and the transparent electroconductive layer 25, may be performed by methods other than above-mentioned manufacturing process, such as a method of disposing granular or pillar-shaped light-transmissive elastomer of a suitable size on the electrode layer 15 of the LED chip 10, followed by a step of vacuum hot pressing; and a method of applying or spraying the emulsion of light-transmissive-elastomer powder on the transparent electroconductive layer 25 or the electrode layer 15 of the LED chip 10, followed by drying thereof and vacuum hot pressing, and the production process is not limited to the above-mentioned process. However, in view of the ease of production, the above-mentioned production process is excellent.
  • the light-emitting device 1 is easily producible. Moreover, since the LED chip 10 is sandwiched by the light-transmissive elastomer layers 35, the LED chip 10 can be reliably fixed for the production.
  • the light-transmissive elastomer layer 30 is formed also in the crevice space 48 between the concavities 46 of the unevenness 45 on the surface of the electrode layer 15 (15A, 15B) of the LED chip 10, and the surface 26 of the light-transmissive electroconductive layer 25 (25A, 25B) of the light-transmissive electroconductive member 20 (20A, 20B), so that a positional deviation is hardly caused in the direction of extension of the boundary between the electrode layer 15 of the LED chip 10, and the light-transmissive electroconductive layer 25 of the light-transmissive electroconductive member 20. For this reason, the electric reliability of the light-emitting device 1 is high.
  • the crevice gap 48 formed between the concavity 46 of the unevenness 45 of the surface of the electrode layer 15 of the LED chip 10 and the surface 26 of the light-transmissive electroconductive layer 25A of the light-transmissive electroconductive member 20A serves as a vacant gap 91, and the light-transmissive elastomer 30 is hardly present there.
  • the elastomer coverage was clearly below 10%.
  • the light-emitting device 90A readily caused a lighting failure. This is presumably because a crack occurred at a part, of the light-transmissive electroconductive layer 25B of the light-transmissive electroconductive member 20B, abutting the angle part of the electrode layer 15B of the LED chip 10, and the stress from the angle part concentrated under severe bending.
  • the light-emitting device C according to Patent document 3 was difficult to manufacture without leaving air bubbles in the light-emitting device including a region between the electrode layer 15 of the LED chip and the light-transmissive electroconductive layer 25, so that a vacant gap not filled with the hot melt adhesive remained between the electrode layer 15 of an LED chip, and the light-transmissive electroconductive layer 25, and also a crack occurred at a part where the light-transmissive electroconductive layer 25 abutted the electrode layer 15 presumably during the pressing. For this reason, in the light-emitting device 90C, lighting failure readily occurred during the bending test or thermal cycling test.
  • the light-emitting device 1A includes: an LED chip 10A having a first and a second electrode layer 15 (15A, 15B) on one face of an LED body 11A; a light-transmissive electroconductive member 20C which includes a transparent substrate 21C and a first and a second light-transmissive electroconductive layer 25 (25A, 25B) formed on the transparent substrate 21C and covers the face having the electrode layers 15 of the LED chip 10A; a transparent substrate 21D covering the other face of the LED chip 10A; and a light-transmissive elastomer layer 30 which consists of an elastomer and is bonded to the circumference 13 of the LED chip 10A, the surface of the light-transmissive electroconductive member 20C, and the surface of the transparent substrate 21D.
  • the LED body 11A has an N-type semiconductor layer 42 and a P-type semiconductor layer 44 on a substrate 41A made of, e.g. a semiconductor or sapphire, a luminescence layer 43 is formed between the N-type semiconductor layer 42 and the P-type semiconductor layer 44.
  • the unevenness of the surface of the electrode layer 15A and the electrode layer 15B may respectively give a roughness of preferably at least 0.1 ⁇ m.
  • the surfaces of the electrode layers 15A and 15B may have a higher adhesiveness with the light-transmissive electroconductive member 20C in the light-emitting device of the present invention.
  • the electrode layers 15A and 15B of the LED chip 10A are formed as so-called "pad electrodes" of a metal conductor, such as Au, and they are electrically connected to the light-transmissive electroconductive layers 25A and 25B, respectively, after positional alignment and vacuum pressing.
  • a metal conductor such as Au
  • the short circuit prevention effect by formation of such a bump electrode on a pad electrode can be also attained in the first embodiment of using an LED chip having electrodes on both faces thereof by forming such a bump electrode on a pad electrode having a smaller area than LED chip (the anode electrode 15B in the example of Fig. 1 ).
  • Figs. 17 and 18 are schematic cross sectional views of light-emitting devices 1AA and 1BA which may be prepared by forming such bump electrodes 36A and 36B, and a bump electrode 36, in the light-emitting devices of Fig. 14 and Fig. 1 , respectively.
  • Such a bump electrode 36A, 36B or 36 may be formed as follows.
  • the light-emitting device 1A having a partial sectional structure schematically shown in Fig. 14 is formed through a process of disposing the light-transmissive elastomer sheet 35 between the electrode layer 15 of the LED chip 10A and the light-transmissive electroconductive layer 25 of the light-transmissive electroconductive member 20; and subjecting the resultant laminate to vacuum hot pressing at a temperature in a range between 10 °C below and 30 °C higher than the Vicat softening temperature of the light-transmissive elastomer, thereby joining the LED chip 10A, the light-transmissive electroconductive member 20 and the light-transmissive and insulating substrate 21D, with the above-mentioned light-transmissive elastomer.
  • the production is performed by using an LED 10A on only one face of which the electrode layers 15 (15A, 15B) are formed, the positional alignment between the electrode layers 15 of the LED chip 10A and the light-transmissive electroconductive layers 25 of the light-transmissive electroconductive member 20C is required only one side thereof. For this reason, production is easy and the yield of the light-emitting device 1 becomes high.
  • the light-emitting device of the present invention may include a plurality of LED chips 10, and it is rather usual that more than two LED chips 10 are included and arranged according to a desired display pattern.
  • the light-emitting device can include one or more types of semiconductor devices chosen from resistances, diodes, transistors and ICs in addition to the LED chip(s) 10, on the surface(s) of the light-transmissive electroconductive layer(s) 25 of the light-transmissive electroconductive member(s) 20.
  • thermal compression bonding has been performed under atmospheric pressure, so that air bubbles (at a pressure higher than atmospheric pressure) are liable to remain especially around the LED chip in the light-emitting device. For this reason, it has been found that the bubbles swell after the thermal compression bonding to cause poor electric connection and undesirable appearance due to irregular light scattering, etc. due to air bubbles and swelling.
  • Patent document 3 of performing heat-press bonding of a light-emitting element electrode and a light-transmissive electroconductive layer, after inserting therebetween an electrically insulating adhesive, such as a flexible hot melt adhesion sheet, the hot melt adhesive is heat-melted to be fluidized, intimately contacts the electrodes and the electroconductive layer and solidifies on cooling to exhibit the bonding ability, whereby electric and mechanical contacts between the light-emitting element electrode and the light-transmissive electroconductive layer, can be attained.
  • the hot melt adhesive is, however, melted and pressed for welding, as is clearly described in Patent document 3.
  • the light-transmissive electroconductive layer of a light-transmissive electroconductive member is abutted against the edge of an electrode, the surface unevenness of the electrode and a stepwise difference between the substrate of a light-emitting element and the edge of an active layer, etc., so that the light-transmissive electroconductive layer is liable to cause a crack or a breakage which is however not prevented by a hot melt adhesive as described above. Accordingly, it becomes impossible to maintain a lighting state when it is subjected to a thermal cycling test in temperature range of, e.g. -20 to 60 °C, or -40 °C to 85 °C usually required of electric parts, or when it is severely bent.
  • the apparatus of the present invention is equipped with the above-mentioned light-emitting device of the present invention.
  • Ra value was measured as an arithmetic average roughness value measured according to JIS B 0601-2001 with respect to a region of 1/3 or more of the crossing length of an objective electrode.
  • Flexural resistance test was performed with respect to six of twelve obtained samples of LED devices under a temperature of 20 ⁇ 2 °C, a relative humidity of 60 to 70%, and an environment of normal pressure (86 - 106kPa).
  • Sampled devices after the preparation were left standing for 24 hours in an environment of temperature of 20 ⁇ 2 °C, relative humidity of 60 to 70% and normal pressure (86 - 106kPa).
  • a double-face pressure sensitive adhesive tape having the same size as the LED device sample was stuck on a horizontally disposed hard plate, and the outer surface of the light-transmissive electroconductive member 20B was stuck onto the double-face adhesive tape to fix the LED device sample onto the hard plate. While being maintained horizontally, the stainless steel bar bonded to light-transmissive electroconductive member 20A was pulled up slowly in a direction of 90 degrees to the light-transmissive electroconductive member 20B, to peel the light-transmissive electroconductive member 20A off the light-transmissive electroconductive member 20B.
  • several LED device samples with exposed surface of electrode 15A of the LED chip were prepared, and a part thereof was used as a sample for elastomer coverage measurement of the electrode layer 15A of the LED chip.
  • the stainless steel bar bonded to light-transmissive electroconductive member 20B was pulled up slowly in a direction of 90 degrees to the hard plate surface, to peel the light-transmissive electroconductive member 20B off the 180 ⁇ m-thick PET film applied with the adhesives.
  • the LED chip with the surface-exposed electrode 15B was left on the PET film. This was used as a sample for elastomer coverage measurement of the electrode layer 15B of the LED chip.
  • Light-transmissive one-face electrode-type LED devices before and after the above-mentioned flexural resistance test and thermal cycling test and having an LED chip disposition similar to the one illustrated in Fig. 14 was treated in a similar manner as the former half of the above section for two-face electrode-type LED devices to peel only the light-transmissive electroconductive member 20C and expose the face including the electrodes 15A and 15B, thereby making samples for measuring the elastomer coverages of the electrodes.
  • a strip-shaped LED device having a general structure including a length of about 90 mm and a width of about 50mm was prepared by disposing six two-face electrode-type LED chips connected in series and arranged in a straight line with a spacing of about 5 mm from each other and disposing a pair of elastomer sheets respectively over the two faces of electrodes, followed by sandwiching with a pair of light-transmissive electroconductive member sheets and hot vacuum pressing.
  • a partial laminate structure thereof was similar as shown in Figs. 1 and 2 . Details thereof are described below.
  • each LED chip included a substrate side electrode layer (15A) comprising a 3.5 ⁇ m-thick Au layer electrically connected to an N-type semiconductor (N-GaAlAs) layer (42) of an LED body (11) via a semiconductor substrate (41), and a light-emitting side electrode layer (15B) comprising a 0.5 ⁇ m-thick Au layer and electrically connected to a P-type semiconductor (P-GaAlAs) layer (44) of the LED body.
  • the substrate side electrode layer (15A) was formed entirely on one face of the LED body (11), and the light-emitting side electrode layer (15B) was formed on 20% of the other face of the LED body.
  • the substrate side electrode layer (15A) had a surface roughness Ra of 0.5 ⁇ m and the light-emitting side electrode layer (15B) had a surface roughness Ra of 0.13 ⁇ m.
  • a 60 ⁇ m-thick acrylic elastomer sheet having a Vicat softening temperature of 110 °C was provided as a material constituting a light-transmissive elastomer layer (30), and cut into a sheet (35) with an areal size almost the same as the light-transmissive electroconductive member (20).
  • the glass transition temperature thereof was -40 °C
  • the elastomer exhibited a melting temperature of 220 °C, and tensile storage moduli of 1.1 GPa at 0 °C, 0.3 GPa at 100 °C and 0.2 GPa at 110 °C (Vicat softening temperature).
  • a light-transmissive electroconductive member (20A) was held so that its electric conduction circuitry layer was directed upward.
  • an elastomer sheet (35) was laminated, and also an LED chip (10) was disposed thereon, so that the light-emitting side electrode layer (15B) was directed upward.
  • another elastomer sheet (35) was laminated on the light-emitting side electrode layer (15B) of the LED chip, and also the light-transmissive electroconductive member (20B) was laminated thereon with its electric conduction circuitry layer (25B) directed downward.
  • the LED device obtained above was evaluated with respect to the thickness of the light-transmissive insulating elastomer layer, sectional observation, the elastomer coverage of the LED electrode, the flexural resistance, and the thermal cycling test.
  • the results are summarized and shown in Table 2 appearing hereinafter together with the results of the following Examples and Comparative Examples.
  • a light-transmissive LED device was prepared and evaluated in the same manner as in Example 1 except that the thicknesses of the electroconductive layers of the light-transmissive electroconductive members both on the substrate side and the light-emitting side were both changed to 2 ⁇ m, the pressure and heating temperature for the vacuum hot pressing of the laminate were changed to 12MPa and 110 °C, respectively.
  • the crevice gap between the surface unevenness on the light-emitting side electrode layer of the LED chip and the electroconductive layer of the light-transmissive electroconductive member on the light-emitting side electrode layer in contact therewith was filled up with the elastomer.
  • a strip-shaped LED device having a general structure roughly identical to that of the device in Example 1 including a length of about 90 mm and a width of about 50 mm was prepared by disposing, however, one-face electrode-type LED chips connected in series and arranged in a straight line with a spacing of about 5 mm from each other and disposing an elastomer sheet over the electrodes on one side, followed by sandwiching with a pair of light-transmissive electroconductive member sheets and hot vacuum pressing.
  • a partial laminate structure thereof is similar as shown in Figs. 14 and 15 . Details thereof are described below.
  • Example 2 Similarly as in Example 1, a pair of transparent substrates (21) each comprising a 180 ⁇ m-thick polyethylene terephthalate (PET) sheet, were provided, and one of these was made a non-light-emitting-side transparent substrate 21D. On one surface of the other transparent substrate 21C, a slurry obtained by dispersing ITO particulates of 0.15 ⁇ m in average particle size (aspect ratio: 3) at a rate of about 90 wt. % in an ultraviolet-curable acrylic transparent resin was applied and cured with ultraviolet rays at room temperature to form a 3 ⁇ m-thick film.
  • PET polyethylene terephthalate
  • a light-transmissive electroconductive member 20C was provided with an electroconductive layer 25A for connection with an electrode 15A for an N-type semiconductor and an electroconductive layer 25B for connection with electrode 15B for a P-type semiconductor, which electroconductive layers 25A and 25B were suitable for the series connection of six LED chips arranged in a straight line, as mentioned above.
  • Example 1 Similarly as in Example 1, a 60 ⁇ m-thick elastomer sheet having a Vicat softening temperature of 110 °C was provided and cut into an areal size comparable to that of the light-transmissive electroconductive member 20C to provide an elastomer sheet 35.
  • an electroconductive layer (25) directed upward of the light-transmissive electroconductive member 20C first an elastomer sheet 35 was laminated, the LED chips 10A were disposed thereon so that light-emitting side electrodes 15A and 15B were directed downward and positionally aligned opposite to the electroconductive layers 25A and 25B, respectively, of the light-transmissive electroconductive member 20C to be laminated with each other. Then, a transparent substrate 21 was laminated on the nonluminescent face 71 of the LED chips 10A, without disposing an elastomer sheet therebetween.
  • the resultant laminate was subjected to a preliminary press at a pressure of 0.1MPa, a vacuum suction of the atmosphere to 5 or less kPa, and a vacuum hot pressing of 120 °C and 10MPa for 10 minutes, thereby obtaining a light-transmissive LED luminescence sheet (LED luminescent device) wherein the light-transmissive elastomer 30 filled between the light-transmissive electroconductive member 20c with the transparent substrate 21c and surrounding the LED chips 10A without air bubbles, to provide a light-transmissive LED luminescence sheet 1A ( Fig. 14 ).
  • the peripheral end faces of the obtained light-transmissive LED luminescence sheet were sealed with a thermosetting resin, to obtain a strip-shaped LED luminescent device, which was then evaluated in the same manner as in Example 1.
  • the crevice gaps between the surface unevenness on the two types of light-emitting-side electrode layers of the LED chip and the electroconductive layers in contact therewith of the light-transmissive electroconductive member on the substrate side were found to be filled up with the elastomer.
  • the gap between the electrode-free face of the LED chip and the transparent substrate was found to be not filled with the elastomer.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 5 except that the thickness of the elastomer sheet 35 was changed to 80 ⁇ m.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 5 except that a 60 ⁇ m-thick elastomer sheet 35 was disposed not on the electrode-side face but on the substrate-side face of the LED chip 10A.
  • the two types of the light-emitting side electrode layers on one face of the LED chip exhibited a contact with the electroconductive layers of the light-transmissive electroconductive member, and the circumference of the LED chip was filled up with the elastomer.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 5 except that the thickness of the elastomer sheet 35 was changed to 30 ⁇ m, and such a 30 ⁇ m-thick elastomer sheet was disposed not only on the two light-emitting-side electrode layers of the LED chip and also between the other face of the LED chip and the transparent substrate.
  • Example 8 (An example wherein an elastomer sheet was disposed on both faces of a two-face electrode-type LED chip and the electroconductive layer was formed by sputtering)
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 1 except for using a light-transmissive electroconductive member obtained by forming not a coated-and-cured slurry type electroconductive layer but a 0.15 ⁇ m-thick ITO sputtered film as an electroconductive layer on the 180 ⁇ m-thick PET sheet.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 8 except that a 45 ⁇ m-thick elastomer sheet having a Vicat softening temperature of 140 °C was used, and the vacuum hot pressing was performed at 140 °C.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 8 except that light-transmissive electroconductive members were prepared by forming electroconductive layers by sputtering similarly as in Example 8, and a 100 ⁇ m-thick elastomer sheet was disposed only on the light-emitting-side face and not on the non-light-emitting side face of the LED chip.
  • the two types of electrode layers on both faces of the LED chip exhibited a contact with the electroconductive layers of the light-transmissive electroconductive members, and the circumference of the LED chip was filled up with the elastomer.
  • Example 10 (An example wherein an elastomer sheet was disposed on both faces of a one-face electrode-type LED chip and the electroconductive layers were formed by sputtering)
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 7 except that a light-transmissive electroconductive member was prepared by forming electroconductive layers by sputtering similarly as in Example 8.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Comparative Example 2 except that a light-transmissive electroconductive member was prepared by forming electroconductive layers by sputtering similarly as in Example 8.
  • Example 11 (An example wherein an elastomer sheet was disposed on the electrode face of a one-face electrode-type LED chip and the electroconductive layers were formed by sputtering)
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 5 except that a light-transmissive electroconductive member was prepared by forming electroconductive layers by sputtering similarly as in Example 8.
  • Light-transmissive LED luminescent devices were prepared and evaluated in the same manner as in Example 5 except that the thicknesses of the electroconductive layers of light-transmissive electroconductive members were changed to 5 ⁇ m, 0.5 ⁇ m and 12 ⁇ m, respectively.
  • the light-transmissive LED luminescence sheets of all these Examples exhibited a result that all the six samples retained the lighting state of the LED chips at bending radii down to 30mm.
  • the light-transmissive LED luminescence sheets of all these Examples exhibited a result that all the six samples retained the lighting state of the LED chips even after 2500 cycles.
  • Light-transmissive LED luminescent devices were prepared and evaluated in the same manner as in Example 1 except that the thicknesses of the electroconductive layers were changed to 0.5 ⁇ m and 12 ⁇ m, respectively.
  • Silver halide as a photosensitive compound was applied on a 180 ⁇ m-thick PET sheet, exposed and developed to provide a light-transmissive electroconductive member having a square lattice-shaped Ag particle mesh electrode layer with a thickness of 1 ⁇ m, a line diameter of 10 ⁇ m and an opening of 500 ⁇ m as a light-transmissive electroconductive layer.
  • a light-transmissive LED luminescent device was prepared and evaluated in the same manner as in Example 1 except for using the light-transmissive electroconductive member instead of the light-transmissive electroconductive member having an ITO-dispersed and cured resin film-type light-transmissive electroconductive layer.
  • a light-transmissive LED luminescence sheet was prepared by a process disclosed in Patent document 5.
  • Elastomer sheets having a Vicat softening temperature of 110 °C similarly as those used in Example 1 but having a thickness of 120 ⁇ m were used to form strip-shaped elastomer sheets with a planar shape identical to those used in Example 1, which were then bored to form six through-holes each suitable for accommodating six LED chips therein. Elastomer sheets thus formed were disposed to accommodate six LED chips disposed in series within the through-holes, and were thereafter subjected to hot vacuum pressing to prepare a light-transmissive LED luminescence sheet, similarly as in Example 1.
  • the substrate-side electrode layer and the light-emitting side electrode layer on both faces of the LED chip exhibited a contact with the electroconductive layers of the light-transmissive electroconductive members on the substrate side and the light-emitting side, and the circumference of the LED chip was filled up with the elastomer.
  • a light-transmissive LED luminescence sheet was produced by a process disclosed in Patent document 4.
  • LED chips a strip-shaped light-transmissive electroconductive member and a strip-shaped transparent substrate, all identical to those used in Example 5, were used.
  • a light-transmissive electroconductive member 20C was held so that electroconductive layers 25A and 25B were directed upward, and thereon, the LED chips 10A were disposed so that their two types of electrode layers 15A and 15B as luminescence-side electrode layers were directed downward and aligned with electroconductive layers 25A and 25B, respectively, and fixed with each other with an anisotropic electroconductive adhesive. Then, a transparent substrate 21D was laminated over electrode-free upper faces of the LED chips 10A.
  • the resultant laminate was placed under a vacuum of 5kPa or below, and an ultraviolet-curable acrylic resin-based adhesive was injected between the light-transmissive electroconductive member 20C and the transparent substrate 21D, and around the LED chips 10A, so as not to leave gaps. Then, the ultraviolet-curable acrylic resin-based adhesive was partially cured by irradiation with ultraviolet rays.
  • a light-transmissive LED luminescence sheet as a luminescent device having a flexural resistance and including the surfaces of the LED chip 10A, other than electrode layers 15A and 15B, bonded with the light-transmissive electroconductive member and the transparent substrate.
  • the end faces of the light-transmissive LED luminescence sheet were sealed with a thermosetting resin, to obtain a strip shaped LED luminescent device, which was then evaluated in the same manner as in Example 5.

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Claims (20)

  1. Dispositif d'émission de lumière (1), comprenant :
    une paire de feuilles d'isolateur transmettant la lumière (20) pourvues chacune d'une couche électroconductrice transmettant la lumière (25), ou une paire d'une feuille d'isolateur transmettant la lumière (20) pourvue de couches électroconductrices transmettant la lumière (25) et d'une feuille d'isolateur transmettant la lumière (21) exempte de couche électroconductrice transmettant la lumière, disposées l'une en face de l'autre de manière à former une région entre la paire,
    un ou plusieurs éléments semi-conducteurs émettant de la lumière (10) pourvus chacun d'une cathode (15A) et d'une anode (15B) qui sont connectés individuellement et électriquement aux couches respectives desdites couches électroconductrices transmettant la lumière (25), et un élastomère transmettant la lumière (30), respectivement disposé entre la paire de feuilles d'isolateur transmettant la lumière (21) de manière à remplir la région en combinaison,
    dans lequel l'élastomère transmettant la lumière (30) est au moins partiellement présent dans l'interface entre la cathode (15A) et l'anode (15B) de l'élément semi-conducteur émettant de la lumière (10) et les couches électroconductrices transmettant la lumière (25), et
    l'élastomère transmettant la lumière (30) est également introduit dans les concavités des surfaces de cathode et d'anode,
    caractérisé en ce que
    ledit élastomère transmettant la lumière (30) a une température de ramollissement Vicat de 80 à 160 °C.
  2. Dispositif d'émission de lumière (1) selon la revendication 1, dans lequel ledit élastomère transmettant la lumière (30) recouvre 10 à 90 % de chacune de l'aire de cathode et de l'aire d'anode dudit élément semi-conducteur émettant de la lumière (10).
  3. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 et 2, dans lequel ledit élastomère transmettant la lumière (30) a une température de fusion qui est plus élevée d'au moins 180 °C ou d'au moins 40 °C que la température de ramollissement Vicat.
  4. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 3, dans lequel ledit élastomère transmettant la lumière (30) a un module d'élasticité de stockage en tension de 0,01 GPa à 10 GPa dans une plage de température de 0 à 100 °C.
  5. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 4, dans lequel ledit élastomère transmettant la lumière (30) a une température de transition vitreuse d'au plus -20 °C.
  6. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 5, dans lequel ledit élastomère transmettant la lumière (30) ne fond pas à la température de ramollissement Vicat, ou a un module d'élasticité de stockage en tension d'au moins 0,1 MPa à la température de ramollissement Vicat.
  7. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 6, dans lequel chacune de la cathode (15A) et de l'anode (15B) de l'élément semi-conducteur émettant de la lumière (10) a une rugosité de surface Ra de 0,1 à 10 µm.
  8. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 7, dans lequel ledit élastomère transmettant la lumière (30) comprend un élastomère acrylique.
  9. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 8, dans lequel ledit élastomère transmettant la lumière (30) est un matériau polymérique élastique.
  10. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 9, dans lequel la couche électroconductrice transmettant la lumière (25) comprend un film conducteur, une couche de résine transparente contenant un conducteur particulaire, ou une électrode à mailles.
  11. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend un film pulvérisé ou un film déposé en phase vapeur d'un conducteur.
  12. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend une couche d'électrode à mailles.
  13. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend une pluralité d'agents de remplissage électroconducteurs transmettant la lumière et un agent de liaison résineux transmettant la lumière liant les agents de remplissage électroconducteurs dans un état de contact mutuel.
  14. Dispositif d'émission de lumière (1) selon la revendication 13, dans lequel les agents de remplissage électroconducteurs occupent 50 à 95 % en poids de la couche électroconductrice transmettant la lumière (25).
  15. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 14, dans lequel au moins l'une de l'anode (15B) et de la cathode {15A) de l'élément semi-conducteur émettant de la lumière (10) est connectée à une couche électroconductrice transmettant la lumière (25) correspondante par l'intermédiaire d'une électrode bombée (36).
  16. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 15, dans lequel la couche électroconductrice transmettant la lumière (25) a une résistivité de couche d'au plus 1000 ohm/□.
  17. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 16, dans lequel la couche électroconductrice transmettant la lumière (25) a une épaisseur de 0,1 à 10 µm.
  18. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 17, qui est exempt de bulles ayant un diamètre extérieur qui est supérieur ou égal à 500 µm ou à la taille de puce de l'élément semi-conducteur émettant de la lumière (10).
  19. Procédé pour produire un dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 18, comprenant :
    la disposition d'un élastomère transmettant la lumière (30) entre une surface d'électrode d'un élément semi-conducteur émettant de la lumière (10) et une surface d'une couche électroconductrice transmettant la lumière (25) d'un élément électroconducteur transmettant la lumière (20), et
    ensuite l'application à l'élément semi-conducteur émettant de la lumière (10) et à l'élément électroconducteur transmettant la lumière (20) d'une pression à chaud sous vide à une température qui est dans une plage de 10 °C au-dessous à 30 °C au-dessus de la température de ramollissement Vicat de l'élastomère transmettant la lumière (30).
  20. Appareil, comprenant un appareil d'affichage ou un appareil d'éclairage comprenant un dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 18.
EP14772962.8A 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent Active EP2980870B1 (fr)

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CN108922959B (zh) 2022-07-29
EP2980870A1 (fr) 2016-02-03
WO2014157455A1 (fr) 2014-10-02
US20180076364A1 (en) 2018-03-15
CN105122482B (zh) 2018-06-19
JP5628460B1 (ja) 2014-11-19
JP6514474B2 (ja) 2019-05-15
US20220393083A1 (en) 2022-12-08
US9837587B2 (en) 2017-12-05
EP3321982B1 (fr) 2022-10-26
CN108922959A (zh) 2018-11-30
EP3321982A1 (fr) 2018-05-16
US20200251630A1 (en) 2020-08-06
JP2015029130A (ja) 2015-02-12
CN105122482A (zh) 2015-12-02
JPWO2014157455A1 (ja) 2017-02-16
EP2980870A4 (fr) 2016-11-09
US11784290B2 (en) 2023-10-10
US20160027973A1 (en) 2016-01-28

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