EP2980870B1 - Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent - Google Patents

Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent Download PDF

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Publication number
EP2980870B1
EP2980870B1 EP14772962.8A EP14772962A EP2980870B1 EP 2980870 B1 EP2980870 B1 EP 2980870B1 EP 14772962 A EP14772962 A EP 14772962A EP 2980870 B1 EP2980870 B1 EP 2980870B1
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European Patent Office
Prior art keywords
light
transmissive
layer
elastomer
emitting device
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EP14772962.8A
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German (de)
English (en)
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EP2980870A1 (fr
EP2980870A4 (fr
Inventor
Keiichi MAKI
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Toshiba Hokuto Electronics Corp
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Toshiba Hokuto Electronics Corp
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Priority to EP17198835.5A priority Critical patent/EP3321982B1/fr
Publication of EP2980870A1 publication Critical patent/EP2980870A1/fr
Publication of EP2980870A4 publication Critical patent/EP2980870A4/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Claims (20)

  1. Dispositif d'émission de lumière (1), comprenant :
    une paire de feuilles d'isolateur transmettant la lumière (20) pourvues chacune d'une couche électroconductrice transmettant la lumière (25), ou une paire d'une feuille d'isolateur transmettant la lumière (20) pourvue de couches électroconductrices transmettant la lumière (25) et d'une feuille d'isolateur transmettant la lumière (21) exempte de couche électroconductrice transmettant la lumière, disposées l'une en face de l'autre de manière à former une région entre la paire,
    un ou plusieurs éléments semi-conducteurs émettant de la lumière (10) pourvus chacun d'une cathode (15A) et d'une anode (15B) qui sont connectés individuellement et électriquement aux couches respectives desdites couches électroconductrices transmettant la lumière (25), et un élastomère transmettant la lumière (30), respectivement disposé entre la paire de feuilles d'isolateur transmettant la lumière (21) de manière à remplir la région en combinaison,
    dans lequel l'élastomère transmettant la lumière (30) est au moins partiellement présent dans l'interface entre la cathode (15A) et l'anode (15B) de l'élément semi-conducteur émettant de la lumière (10) et les couches électroconductrices transmettant la lumière (25), et
    l'élastomère transmettant la lumière (30) est également introduit dans les concavités des surfaces de cathode et d'anode,
    caractérisé en ce que
    ledit élastomère transmettant la lumière (30) a une température de ramollissement Vicat de 80 à 160 °C.
  2. Dispositif d'émission de lumière (1) selon la revendication 1, dans lequel ledit élastomère transmettant la lumière (30) recouvre 10 à 90 % de chacune de l'aire de cathode et de l'aire d'anode dudit élément semi-conducteur émettant de la lumière (10).
  3. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 et 2, dans lequel ledit élastomère transmettant la lumière (30) a une température de fusion qui est plus élevée d'au moins 180 °C ou d'au moins 40 °C que la température de ramollissement Vicat.
  4. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 3, dans lequel ledit élastomère transmettant la lumière (30) a un module d'élasticité de stockage en tension de 0,01 GPa à 10 GPa dans une plage de température de 0 à 100 °C.
  5. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 4, dans lequel ledit élastomère transmettant la lumière (30) a une température de transition vitreuse d'au plus -20 °C.
  6. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 5, dans lequel ledit élastomère transmettant la lumière (30) ne fond pas à la température de ramollissement Vicat, ou a un module d'élasticité de stockage en tension d'au moins 0,1 MPa à la température de ramollissement Vicat.
  7. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 6, dans lequel chacune de la cathode (15A) et de l'anode (15B) de l'élément semi-conducteur émettant de la lumière (10) a une rugosité de surface Ra de 0,1 à 10 µm.
  8. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 7, dans lequel ledit élastomère transmettant la lumière (30) comprend un élastomère acrylique.
  9. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 8, dans lequel ledit élastomère transmettant la lumière (30) est un matériau polymérique élastique.
  10. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 9, dans lequel la couche électroconductrice transmettant la lumière (25) comprend un film conducteur, une couche de résine transparente contenant un conducteur particulaire, ou une électrode à mailles.
  11. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend un film pulvérisé ou un film déposé en phase vapeur d'un conducteur.
  12. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend une couche d'électrode à mailles.
  13. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 10, dans lequel la couche électroconductrice transmettant la lumière (25) comprend une pluralité d'agents de remplissage électroconducteurs transmettant la lumière et un agent de liaison résineux transmettant la lumière liant les agents de remplissage électroconducteurs dans un état de contact mutuel.
  14. Dispositif d'émission de lumière (1) selon la revendication 13, dans lequel les agents de remplissage électroconducteurs occupent 50 à 95 % en poids de la couche électroconductrice transmettant la lumière (25).
  15. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 14, dans lequel au moins l'une de l'anode (15B) et de la cathode {15A) de l'élément semi-conducteur émettant de la lumière (10) est connectée à une couche électroconductrice transmettant la lumière (25) correspondante par l'intermédiaire d'une électrode bombée (36).
  16. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 15, dans lequel la couche électroconductrice transmettant la lumière (25) a une résistivité de couche d'au plus 1000 ohm/□.
  17. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 16, dans lequel la couche électroconductrice transmettant la lumière (25) a une épaisseur de 0,1 à 10 µm.
  18. Dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 17, qui est exempt de bulles ayant un diamètre extérieur qui est supérieur ou égal à 500 µm ou à la taille de puce de l'élément semi-conducteur émettant de la lumière (10).
  19. Procédé pour produire un dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 18, comprenant :
    la disposition d'un élastomère transmettant la lumière (30) entre une surface d'électrode d'un élément semi-conducteur émettant de la lumière (10) et une surface d'une couche électroconductrice transmettant la lumière (25) d'un élément électroconducteur transmettant la lumière (20), et
    ensuite l'application à l'élément semi-conducteur émettant de la lumière (10) et à l'élément électroconducteur transmettant la lumière (20) d'une pression à chaud sous vide à une température qui est dans une plage de 10 °C au-dessous à 30 °C au-dessus de la température de ramollissement Vicat de l'élastomère transmettant la lumière (30).
  20. Appareil, comprenant un appareil d'affichage ou un appareil d'éclairage comprenant un dispositif d'émission de lumière (1) selon l'une quelconque des revendications 1 à 18.
EP14772962.8A 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent Active EP2980870B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP17198835.5A EP3321982B1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de production et dispositif utilisant un dispositif électroluminescent

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013069988 2013-03-28
JP2013069989 2013-03-28
PCT/JP2014/058747 WO2014157455A1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP17198835.5A Division-Into EP3321982B1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de production et dispositif utilisant un dispositif électroluminescent
EP17198835.5A Division EP3321982B1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de production et dispositif utilisant un dispositif électroluminescent

Publications (3)

Publication Number Publication Date
EP2980870A1 EP2980870A1 (fr) 2016-02-03
EP2980870A4 EP2980870A4 (fr) 2016-11-09
EP2980870B1 true EP2980870B1 (fr) 2018-01-17

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EP17198835.5A Active EP3321982B1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de production et dispositif utilisant un dispositif électroluminescent
EP14772962.8A Active EP2980870B1 (fr) 2013-03-28 2014-03-27 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent

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US (4) US9837587B2 (fr)
EP (2) EP3321982B1 (fr)
JP (2) JP5628460B1 (fr)
CN (2) CN108922959B (fr)
WO (1) WO2014157455A1 (fr)

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US20160027973A1 (en) 2016-01-28
CN108922959B (zh) 2022-07-29
EP2980870A1 (fr) 2016-02-03
EP2980870A4 (fr) 2016-11-09
US9837587B2 (en) 2017-12-05
EP3321982B1 (fr) 2022-10-26
JPWO2014157455A1 (ja) 2017-02-16
CN105122482A (zh) 2015-12-02
JP6514474B2 (ja) 2019-05-15
EP3321982A1 (fr) 2018-05-16
JP5628460B1 (ja) 2014-11-19
US20180076364A1 (en) 2018-03-15
US20220393083A1 (en) 2022-12-08
JP2015029130A (ja) 2015-02-12
US20200251630A1 (en) 2020-08-06
US11784290B2 (en) 2023-10-10
CN108922959A (zh) 2018-11-30
CN105122482B (zh) 2018-06-19
WO2014157455A1 (fr) 2014-10-02

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