WO2016148019A1 - Procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et couche de substance fluorescente - Google Patents

Procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et couche de substance fluorescente Download PDF

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Publication number
WO2016148019A1
WO2016148019A1 PCT/JP2016/057597 JP2016057597W WO2016148019A1 WO 2016148019 A1 WO2016148019 A1 WO 2016148019A1 JP 2016057597 W JP2016057597 W JP 2016057597W WO 2016148019 A1 WO2016148019 A1 WO 2016148019A1
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WIPO (PCT)
Prior art keywords
optical semiconductor
light reflecting
layer
sheet
semiconductor element
Prior art date
Application number
PCT/JP2016/057597
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English (en)
Japanese (ja)
Inventor
恭也 大薮
広希 河野
逸旻 周
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016043581A external-priority patent/JP6762736B2/ja
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to US15/556,020 priority Critical patent/US10424703B2/en
Priority to CN201680016213.0A priority patent/CN107431115A/zh
Priority to EP16764849.2A priority patent/EP3273491B1/fr
Priority to KR1020177025605A priority patent/KR102541533B1/ko
Publication of WO2016148019A1 publication Critical patent/WO2016148019A1/fr
Priority to US16/523,627 priority patent/US10923639B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to an optical semiconductor element with a light reflection layer, and a method for manufacturing an optical semiconductor element with a light reflection layer and a phosphor layer, and more specifically, manufacturing an optical semiconductor element with a light reflection layer and an optical semiconductor element.
  • the present invention relates to a method, and a method for producing a light reflecting layer and an optical semiconductor element with a phosphor layer, comprising a light reflecting layer, a phosphor layer, and an optical semiconductor element.
  • Patent Document 1 a method of arranging a covering member containing light-reflecting particles on each side surface of a plurality of light-emitting elements is known (for example, see Patent Document 1).
  • Patent Document 1 first, a plurality of light-emitting elements are flip-chip mounted on a substrate at intervals in the plane direction, and then a liquid resin containing light-reflective particles by a dispenser (liquid dispensing apparatus). Are potted (dropped) between adjacent light emitting elements, and the covering member is disposed on the side surfaces of the plurality of light emitting elements.
  • the covering member from a sheet, and specifically, to embed a plurality of light emitting elements with the covering sheet.
  • the covering member adheres to the upper surface of the light emitting element. If it does so, the light emitted toward the upper side from the light emitting element will be reflected by the coating
  • An object of the present invention is to provide an optical semiconductor element with a light reflecting layer that is excellent in light extraction efficiency, and a method for manufacturing an optical semiconductor element with a light reflecting layer and a phosphor layer.
  • the present invention (1) has an electrode surface on which an electrode is provided, a light emitting surface facing the electrode surface and provided with a light emitting layer, and a connecting surface for connecting peripheral edges of the electrode surface and the light emitting surface.
  • a method for manufacturing an optical semiconductor element with a light reflection layer comprising the step of cutting the light reflection layer.
  • the light reflecting layer attached to the light emitting surfaces of the plurality of optical semiconductor elements is removed, the light emitted from the light emitting surfaces of the plurality of optical semiconductor elements can be efficiently extracted.
  • the light reflecting sheet has a shape continuous in a direction orthogonal to the thickness direction so as to include the plurality of optical semiconductor elements when projected in the thickness direction of the light reflecting sheet.
  • the manufacturing method of the optical-semiconductor element with a light reflection layer as described in (1) is included.
  • the light reflecting sheet has a shape that is continuous in a direction orthogonal to the thickness direction so as to include a plurality of optical semiconductor elements when projected in the thickness direction of the light reflecting sheet.
  • the sheet can be easily filled into the first gap.
  • the present invention (3) has an electrode surface on which an electrode is provided, a light emitting surface that faces the electrode surface and is provided with a light emitting layer, and a connecting surface that connects peripheral edges of the electrode surface and the light emitting surface.
  • a step of temporarily fixing the electrode surfaces of the plurality of optical semiconductor elements to the temporary fixing sheet with a space therebetween, and a phosphor layer so that a second gap is formed between the adjacent optical semiconductor elements Forming the light emitting surface of the plurality of optical semiconductor elements, filling the second gap with a light reflecting sheet, and forming a light reflecting layer on a side surface of the phosphor layer facing the second gap.
  • a step of removing the light reflecting layer attached to the surface of the phosphor layer, and a step of cutting the light reflecting layer between the phosphor layers adjacent to each other, and The manufacturing method of the optical semiconductor element with a fluorescent substance layer is included.
  • this invention (4) WHEREIN: In the manufacturing method of the optical semiconductor element with a light reflection layer and a fluorescent substance layer, in the process of forming the said fluorescent substance layer, it forms also in the said connection surface of these optical semiconductor elements.
  • the manufacturing method of the optical semiconductor element with a light reflection layer and fluorescent substance layer as described in (3) is included.
  • the phosphor layer is also formed on the connection surface of the optical semiconductor element in the light reflecting layer and the optical semiconductor element with the phosphor layer, the light emitted from the connection surface of the optical semiconductor element is efficiently converted into the wavelength. After that, the light can be reliably reflected by the light reflecting layer formed on the side surface of the phosphor layer facing the second gap.
  • the step of forming the phosphor layer has a fluorescence having a shape that is continuous in a direction orthogonal to the thickness direction so as to include the plurality of optical semiconductor elements when projected in the thickness direction.
  • the phosphor sheet is cut so that the second gap is formed between the step of filling the body sheet into the first gap between the optical semiconductor elements adjacent to each other and the optical semiconductor element adjacent to each other.
  • the phosphor sheet can be simply filled into the first gap, and then the second gap can be easily formed.
  • the phosphor sheet having a pattern corresponding to the light emitting surface of the plurality of optical semiconductor elements when projected in the thickness direction is used.
  • the manufacturing method of the optical semiconductor element with a body layer is included.
  • the light reflection layer is formed on the connection surface of the plurality of optical semiconductor elements, the light emitted from the connection surface of the optical semiconductor elements can be efficiently reflected by the light reflection layer.
  • the light reflecting sheet has a shape continuous in a direction orthogonal to the thickness direction so as to include the plurality of optical semiconductor elements when projected in the thickness direction of the light reflecting sheet.
  • the light reflecting sheet has a shape that is continuous in a direction orthogonal to the thickness direction so as to include a plurality of optical semiconductor elements when projected in the thickness direction of the light reflecting sheet.
  • the sheet can be easily filled in the second gap.
  • an optical semiconductor element with a light reflecting layer of the present invention According to the method for manufacturing an optical semiconductor element with a light reflecting layer of the present invention, light emitted from the light emitting surfaces of a plurality of optical semiconductor elements can be efficiently extracted.
  • the method for manufacturing a light reflecting layer and a phosphor layer-attached optical semiconductor element of the present invention light emitted from the light emitting surfaces of a plurality of optical semiconductor elements and wavelength-converted by the phosphor layer can be efficiently extracted. .
  • FIG. 1A to 1E are process diagrams of an embodiment of a method of manufacturing an optical semiconductor element with a light reflecting layer according to the present invention.
  • FIG. 1A is a temporary fixing process
  • FIG. 1B is a light reflecting sheet filling process
  • FIG. 1D shows a cutting step
  • FIG. 1E shows a peeling step.
  • FIG. 2 is a cross-sectional view of an optical semiconductor device including an optical semiconductor element with a light reflecting layer obtained by the method shown in FIGS. 1A to 1E.
  • FIG. 3 is a modified example of the first embodiment, and shows a mode in which a light reflecting sheet in which an opening is formed is used.
  • FIG. 4A to 4D are process diagrams of an embodiment (second embodiment) of a method for manufacturing an optical semiconductor element with a light reflecting layer and a phosphor layer according to the present invention.
  • FIG. 4A is a temporary fixing process
  • FIG. FIG. 4C shows a phosphor layer removing process
  • FIG. 4D shows a light reflecting sheet filling process.
  • 5E to FIG. 5G are process diagrams of an embodiment (second embodiment) of the method for manufacturing an optical semiconductor element with a light reflecting layer and a phosphor layer according to the present invention, following FIG. 4D. 2 attachment part removal process
  • FIG. 5F shows a cutting process
  • FIG. 5G shows a peeling process.
  • FIG. 6 shows a cross-sectional view of an optical semiconductor device including a light reflecting layer and an optical semiconductor element with a phosphor layer obtained by the method shown in FIGS. 4A to 5G.
  • FIG. 7 is a modified example of the second embodiment and shows a mode in which a light reflecting sheet in which an opening is formed is used.
  • 8A to 8C are process diagrams of another embodiment (third embodiment) of the method of manufacturing the optical semiconductor element with the light reflecting layer and the phosphor layer according to the present invention.
  • FIG. 8A is a temporary fixing process
  • FIG. 8B shows a phosphor sheet laminating step
  • FIG. 8C shows a light reflecting sheet filling step.
  • FIGS. 8A to 9F are process charts of another embodiment (third embodiment) of the method for manufacturing an optical semiconductor element with a light reflecting layer and a phosphor layer according to the present invention, following FIG. 8C.
  • FIG. 9E shows a cutting process and FIG. 9F shows a peeling process.
  • FIG. 10 shows a cross-sectional view of an optical semiconductor device including an optical semiconductor element with a light reflecting layer and a phosphor layer obtained by the method shown in FIGS. 8A to 9F.
  • 11A to 11D are process diagrams of an embodiment (fourth embodiment) of a method for producing an optical semiconductor element with a light reflecting layer and a phosphor layer according to the present invention.
  • FIG. 11A shows a phosphor sheet filling process
  • 11B shows a phosphor layer removing step
  • FIG. 11A shows a phosphor sheet filling process
  • 11B shows a phosphor layer removing step
  • FIG. 11C shows a light reflecting sheet filling step
  • FIG. 11D shows a step of removing the release sheet.
  • 12E to 12G are process diagrams of an embodiment (fourth embodiment) of a method for manufacturing an optical semiconductor element with a light reflecting layer and a phosphor layer according to the present invention, following FIG. 11D.
  • FIG. 12F shows a cutting process
  • FIG. 12G shows a peeling process.
  • FIG. 13 shows a cross-sectional view of an optical semiconductor device including an optical semiconductor element with a light reflecting layer and a phosphor layer obtained by the method shown in FIGS. 11A to 12G.
  • 14A to 14C are process diagrams for measuring the hardness of the light reflecting sheet, FIG.
  • FIG. 14A is a process for preparing a soft material hardness meter and a light reflecting sheet
  • FIG. 14B is a diagram showing a sensor head mounted on the light reflecting sheet
  • FIG. 14C shows a step of loading the sensor head to the light reflecting sheet with the actual load.
  • the vertical direction of the paper surface is the vertical direction (an example of the first direction and the thickness direction)
  • the upper side of the paper surface is the upper side (one side in the first direction, the one side in the thickness direction)
  • the lower side of the paper surface is the lower side ( The other side in the first direction and the other side in the thickness direction).
  • the left-right direction on the paper surface is the left-right direction (second direction orthogonal to the first direction, an example of the orthogonal direction to the thickness direction)
  • the left side on the paper surface is the left side (second side in the second direction)
  • the right side on the paper surface is the right side (the other in the second direction).
  • Side the left-right direction on the paper surface
  • the paper thickness direction is the front-rear direction (a third direction orthogonal to the first direction and the second direction, an example of a direction orthogonal to the thickness direction), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is the rear side (The other side in the third direction). Specifically, it conforms to the direction arrow in each figure.
  • 1st Embodiment one Embodiment of the manufacturing method of the optical-semiconductor element with a light reflection layer
  • a temporary fixing process (refer FIG. 1A), a light reflection sheet filling process (refer FIG. 1B), and 1st adhesion.
  • a partial removal process (refer FIG. 1C), a cutting process (refer FIG. 1D), and a peeling process (refer FIG. 1E) are provided.
  • FIG. 1A temporary fixing process
  • FIG. 1B a light reflection sheet filling process
  • 1st adhesion A partial removal process (refer FIG. 1C), a cutting process (refer FIG. 1D), and a peeling process (refer FIG. 1E) are provided.
  • the temporary fixing step is a step of temporarily fixing a plurality of optical semiconductor elements 1 to the temporary fixing sheet 2 at intervals.
  • the optical semiconductor element 1 is, for example, an LED or LD that converts electrical energy into light energy.
  • the optical semiconductor element 1 is a blue LED (light emitting diode element) that emits blue light.
  • the optical semiconductor element 1 does not include a rectifier (semiconductor element) such as a transistor having a technical field different from that of the optical semiconductor element.
  • the optical semiconductor element 1 has a substantially flat plate shape along the front-rear direction and the left-right direction.
  • the optical semiconductor element 1 has an electrode surface 3, a light emitting surface 4, and a peripheral side surface 5 as an example of a connecting surface.
  • the electrode surface 3 is the lower surface of the optical semiconductor element 1 and the surface on which the electrode 6 is formed.
  • the light emitting surface 4 is the upper surface of the optical semiconductor element 1 and is disposed so as to face the electrode surface 3 with an interval on the upper side.
  • the light emitting surface 4 has a flat shape.
  • a light emitting layer 7 disposed on the optical semiconductor element 1 is provided on the light emitting surface 4. Note that the light emitting layer 7 is omitted in FIGS. 1B to 1E in order to clarify the relative arrangement of the optical semiconductor element 1 and a light reflecting layer 14 described later.
  • the peripheral side surface 5 connects the peripheral end edge of the electrode surface 3 and the peripheral end edge of the opposing surface 4.
  • the dimensions of the optical semiconductor element 1 are set as appropriate. Specifically, the thickness (height) is, for example, 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more, and, for example, 500 ⁇ m or less, Preferably, it is 200 micrometers or less.
  • the length L1 in the front-rear direction and / or the left-right direction of the optical semiconductor element 1 is, for example, 0.2 mm or more, preferably 0.5 mm or more, and, for example, 3.00 mm or less, preferably 2.00 mm. It is as follows.
  • the temporary fixing sheet 2 includes a support plate 8 and a pressure-sensitive adhesive layer 9 disposed on the support plate 8.
  • the support plate 8 examples include polymer films such as polyethylene films and polyester films (such as PET), ceramic sheets such as metal foil, and the like.
  • the thickness of the support plate 8 is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 2,000 ⁇ m or less, preferably 1,000 ⁇ m or less.
  • the pressure sensitive adhesive layer 9 is disposed on the entire upper surface of the support plate 8.
  • the pressure-sensitive adhesive layer 9 has a sheet shape on the upper surface of the support plate 8.
  • the pressure-sensitive adhesive layer 9 is formed of a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by, for example, treatment (for example, irradiation of ultraviolet rays or heating).
  • a support layer (not shown) for improving the mechanical strength of the pressure-sensitive adhesive layer 9 is interposed in the pressure-sensitive adhesive layer 9 in the middle of the pressure-sensitive adhesive layer 9 in the thickness direction.
  • a support layer polymer films, such as a polyethylene film and a polyester film (PET etc.), etc. are mentioned, for example.
  • the total thickness of the pressure-sensitive adhesive layer 9 is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 1,000 ⁇ m or less, preferably 500 ⁇ m or less.
  • the plurality of optical semiconductor elements 1 are temporarily fixed on the temporary fixing sheet 2 with a space therebetween in the front-rear direction and the left-right direction.
  • the electrode surfaces 3 of the plurality of optical semiconductor elements 1 are pressure-sensitive bonded to the upper surface of the pressure-sensitive adhesive layer 9 so as to ensure the interval L0 and the pitch L2 described below.
  • the plurality of optical semiconductor elements 1 are temporarily fixed to the temporary fixing sheet 2 so that the light emitting layer 7 faces upward.
  • FIG. 1A only the electrode 6 is in contact with the pressure-sensitive adhesive layer 9, but the electrode surface 3 other than the electrode 6 may be in contact with the pressure-sensitive adhesive layer 9.
  • the interval (interval in the front-rear direction and / or the left-right direction) L0 between the adjacent optical semiconductor elements 1 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and, for example, 1.50 mm or less. Preferably, it is 0.80 mm or less.
  • the pitch L2 of the optical semiconductor elements 1 adjacent to each other, specifically, the sum (L1 + L0) of the length L1 and the interval L0 described above is, for example, 0.25 mm or more, preferably 0.60 mm or more. For example, it is 3.00 mm or less, preferably 2.00 mm or less.
  • the plurality of optical semiconductor elements 1 are supported on the support plate 8 via the pressure-sensitive adhesive layer 9.
  • a first gap 10 is formed between the optical semiconductor elements 1 adjacent to each other.
  • the first gap 10 has a dimension corresponding to the interval L0 and is not shown in FIG. 1A, but has a substantially grid shape in plan view.
  • the light reflecting sheet filling step is performed after the temporary fixing step (see FIG. 1A).
  • the light reflecting sheet 11 is filled into the first gap 10.
  • the light reflecting sheet 11 is provided in the light reflecting member 13 as shown in FIG. 1A.
  • the light reflection member 13 includes a release sheet 12 and a light reflection sheet 11 supported by the release sheet 12.
  • the light reflecting member 13 includes only the release sheet 12 and the light reflecting sheet 11.
  • the release sheet 12 is made of the same material as the support plate 8 described above and has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction.
  • the thickness of the release sheet 12 is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 2,000 ⁇ m or less, preferably 1,000 ⁇ m or less.
  • the length in the front-rear direction and the length in the left-right direction of the release sheet 12 are set to be larger than or equal to those of the light reflecting sheet 11 described below.
  • the light reflecting sheet 11 is disposed on the lower surface of the release sheet 12.
  • the light reflecting sheet 11 has a layer (flat plate) shape continuous in the front-rear direction and the left-right direction.
  • the light reflecting sheet 11 has the light reflecting member 13 opposed to the upper side of the plurality of optical semiconductor elements 1 temporarily fixed to the temporarily fixing sheet 2 and projected them in the thickness direction.
  • the size (the length in the front-rear direction and the length in the left-right direction) including the plurality of optical semiconductor elements 1 is set.
  • the volume V1 of the light reflecting sheet 11 (that is, the thickness of the light reflecting sheet 11 ⁇ the length in the front-rear direction ⁇ the length in the left-right direction) is preferably larger than or equal to the total volume V0 of the first gap 10. Is set to More preferably, the volume V1 of the light reflecting sheet 11 is larger than the total volume V0 of the first gap 10. In this case, the light reflecting sheet 11 can be easily and reliably filled in the first gap 10.
  • the volume V1 of the light reflecting sheet 11 is, for example, 95% or more, preferably 103% or more, for example, 120% or less, preferably, with respect to the total volume V0 of the first gap 10. 110% or less.
  • the thickness of the light reflecting sheet 11 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and, for example, 1,000 ⁇ m or less, preferably 450 ⁇ m or less.
  • the light reflecting sheet 11 is prepared from, for example, a light reflecting composition containing a light reflecting component and a resin.
  • Examples of the light reflecting component include light reflecting particles such as inorganic particles and organic particles.
  • oxides such as titanium oxide, zinc oxide, zirconium oxide, composite inorganic oxide particles (glass and the like), for example, lead white (basic lead carbonate), carbonates such as calcium carbonate, for example, Examples include clay minerals such as kaolin.
  • an oxide is used.
  • organic particles examples include acrylic resin particles, styrene resin particles, acrylic-styrene resin particles, silicone resin particles, polycarbonate resin particles, benzoguanamine resin particles, polyolefin resin particles, polyester resin particles, and polyamides. Resin particles, polyimide resin particles, and the like. Preferably, acrylic resin particles are used.
  • the content ratio of the light reflection component is, for example, 1% by mass or more, preferably 3% by mass or more, and, for example, 80% by mass or less, preferably 75% by mass or less with respect to the light reflection composition. is there.
  • the resin is a matrix that uniformly disperses the light reflection component in the light reflection composition, and for example, the light reflection sheet 11 has a viscosity (described later) that can fill the first gap 10 with the light reflection sheet 11 when heated. It is a component to be imparted.
  • the resin include a curable resin and a thermoplastic resin.
  • a curable resin is used.
  • the curable resin include thermosetting resins such as a two-stage reaction curable resin and a one-stage reaction curable resin.
  • the two-stage reaction curable resin has two reaction mechanisms.
  • the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained.
  • C-stage complete curing
  • the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions.
  • the B stage state is a state between the A stage state where the thermosetting resin is in a liquid state and the fully cured C stage state, and curing and gelation proceed slightly, and the compression elastic modulus is C stage.
  • the first-stage reaction curable resin has one reaction mechanism, and can be C-staged (completely cured) from the A-stage state by the first-stage reaction.
  • a one-stage reaction curable resin can stop the reaction in the middle of the first-stage reaction and change from the A-stage state to the B-stage state.
  • the reaction is restarted, and the thermosetting resin that can be C-staged (completely cured) from the B-stage state is included. That is, the thermosetting resin includes a thermosetting resin that can be in a B-stage state.
  • the one-stage reaction curable resin cannot be controlled to stop in the middle of the one-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage (completely cured). ) Can be included.
  • thermosetting resin includes a thermosetting resin that can be in a B-stage state.
  • thermosetting resin examples include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • the thermosetting resin that can be in the B-stage state preferably includes a silicone resin and an epoxy resin, and more preferably includes a silicone resin.
  • silicone resin examples include a phenyl silicone resin containing a phenyl group in the molecule, for example, a methyl silicone resin containing a methyl group in the molecule.
  • B-stage phenyl-based silicone resin is once melted or liquefied by heating and then completely cured.
  • the B-stage methyl silicone resin is once softened or plasticized by heating and then completely cured.
  • the B-staged phenyl silicone resin is easier to form the first adhesion portion 17 (described later) in the light reflecting sheet filling step shown in FIG. 1B than the B-staged methyl silicone resin.
  • the viscosity of the B-stage silicone resin gradually decreases as the temperature rises, and thereafter, when the temperature rise is continued, the viscosity gradually increases and becomes a C-stage silicone resin.
  • thermosetting resin may be the same type or a plurality of types.
  • the blending ratio of the resin is, for example, 10% by mass or more, preferably 25% by mass or more, and for example, 99% by mass or less, preferably 97% by mass or less with respect to the light reflecting composition.
  • the light reflecting composition may contain an additive at an appropriate ratio.
  • the light reflecting sheet 11 for example, first, a light reflecting component, a resin, and an additive that is added as necessary are blended to prepare a varnish of the light reflecting composition. Subsequently, the varnish is applied to the surface of the release sheet 12. Thereafter, when the light reflecting composition contains a thermosetting resin that can be in a B-stage state, the light reflecting composition is B-staged (semi-cured). Specifically, the light reflecting composition is heated.
  • the heating temperature is, for example, 50 ° C. or more, preferably 70 ° C. or more, and for example, 120 ° C. or less, preferably 100 ° C. or less.
  • the heating time is, for example, 5 minutes or more, preferably 10 minutes or more, and for example, 20 minutes or less, preferably 15 minutes or less.
  • the light reflecting sheet 11 is formed.
  • the light reflecting sheet 11 in the B stage state is formed on the surface of the release sheet 12.
  • the melt viscosity of the light reflecting sheet 11 at 60 ° C. is, for example, 40 Pa ⁇ s or more, for example, 1,000 Pa ⁇ s or less, preferably 300 Pa ⁇ s or less.
  • the melt viscosity is measured using an E-type viscometer.
  • melt viscosity at 60 ° C. is equal to or less than the above upper limit, the viscosity of the light reflecting sheet 11 is sufficiently lowered by hot pressing (described later), and the light reflecting sheet 11 is quickly and surely filled into the first gap 10. be able to.
  • melt viscosity at 60 ° C. is equal to or higher than the lower limit described above, the light reflecting sheet 11 is suppressed from being excessively soft, and the light reflecting sheet 11 flows toward the outside so as to be separated from the optical semiconductor element 1. Can be suppressed.
  • the light reflecting member 13 is pressure-bonded to the temporary fixing sheet 2 and the optical semiconductor element 1.
  • the light reflecting member 13, the temporary fixing sheet 2, and the optical semiconductor element 1 are set in a press so that the light reflecting sheet 11 and the optical semiconductor element 1 are opposed to each other in the thickness direction. For example, hot pressing is performed.
  • the heat press conditions are set as appropriate.
  • the temperature of the hot press is 60 ° C. or higher, preferably 70 ° C. or higher, and 200 ° C. or lower, preferably 180 ° C. or lower.
  • the pressure of the hot press is, for example, 0.01 MPa or more, preferably 0.10 MPa or more, and for example, 10.00 MPa or less, preferably 5.00 MPa or less.
  • the time for hot pressing is, for example, 1 minute or more, preferably 3 minutes or more, and for example, 60 minutes or less, preferably 30 minutes or less.
  • the hot press can be performed a plurality of times.
  • This light press fills the first gap 10 with the light reflecting sheet 11 (light reflecting composition).
  • the light reflecting layer 14 made of the light reflecting composition (light reflecting sheet 11) is formed in a shape in which the first gap 10 is filled.
  • the portion filled in the first gap 10 is a first filling portion 33.
  • the light reflecting layer 14 (first filling portion 33) covers the peripheral side surface 5 of the optical semiconductor element 1. That is, the light reflection layer 14 is formed on the peripheral side surface 5 of the plurality of optical semiconductor elements 1.
  • the light reflecting layer 14 also covers the surface exposed from the electrode 6 in the electrode surface 3 of the optical semiconductor element 1. Furthermore, the light reflecting layer 14 is covered and attached to the light emitting surface 4 of the optical semiconductor element 1. In the light reflecting layer 14, a portion attached to the light emitting surface 4 is a first attached portion 17.
  • the light reflecting layer 14 has a flat upper surface 15.
  • the upper surface 15 of the first attachment portion 17 and the upper surface 15 of the portion located on the first filling portion 33 are the front-rear direction and the left-right direction. It is the same as that.
  • the thickness T1 of the first adhesion portion 17 is, for example, 1 ⁇ m or more, for example, 500 ⁇ m or less, and further 200 ⁇ m or less.
  • the release sheet 12 is peeled from the light reflecting layer 14 as indicated by the arrow in FIG. 1B. Specifically, the release sheet 12 is peeled off from the upper surface 15 of the light reflecting layer 14.
  • the light reflecting layer-attached optical semiconductor element 16 including the plurality of optical semiconductor elements 1 and the light reflecting layer 14 having the first filling portion 33 and the first attached portion 17, and the electrode surface 3 on the temporary fixing sheet 2. Get in a temporarily fixed state.
  • the upper surface of the optical semiconductor element 16 with the light reflecting layer is composed of the upper surface 15 of the light reflecting layer 14.
  • the light emitting surface 4 of the optical semiconductor element 1 is covered with the light reflecting layer 14.
  • the optical semiconductor element 16 with the light reflection layer including the optical semiconductor element 1 and the light reflection layer 14 is obtained in a state of being temporarily fixed to the temporary fixing sheet 2.
  • the first attached portion 17 is removed.
  • the pressure-sensitive adhesive sheet 18 is prepared from a pressure-sensitive adhesive and has a sheet shape continuous in the front-rear direction and the left-right direction.
  • the size of the pressure-sensitive adhesive sheet 18 is set to a size that can include the first attached portion 17 when, for example, the pressure-sensitive adhesive sheet 18 is projected in the thickness direction.
  • Examples of pressure sensitive adhesives include acrylic pressure sensitive adhesives, rubber pressure sensitive adhesives, silicone pressure sensitive adhesives, urethane pressure sensitive adhesives, polyacrylamide pressure sensitive adhesives, and the like.
  • the pressure-sensitive adhesive sheet 18 may be supported by a support material or the like.
  • the pressure-sensitive adhesive sheet 18 has an adhesive strength (180 ° C. peel adhesive strength) at 25 ° C.
  • the pressure-sensitive adhesive sheet 18 was cut to a width of 20 mm, and this was pressure-sensitively bonded to a silicone wafer. After that, the pressure-sensitive adhesive sheet 18 was subjected to a peeling test at a peeling speed of 100 mm / min and a peeling angle of 180 ° C. It is measured as the adhesive strength.
  • the pressure-sensitive adhesive surface of the pressure-sensitive adhesive sheet 18 (when the pressure-sensitive adhesive sheet 18 supports a support material, first, the opposite side surface to the surface supported by the support material) ) Is disposed opposite to the upper surface 15 of the light reflecting layer 14 including the first attached portion 17 and pressure-sensitively adhered to the first attached portion 17, and then the first attached portion 17 is peeled off from the light emitting surface 4.
  • the pressure-sensitive adhesive sheet 18 is lowered, and then, as shown in the center part of FIG. Then, as shown in the left part of FIG. 1B, the pressure-sensitive adhesive sheet 18 is raised (pulled up) together with the first adhesion part 17.
  • the first adhesion portion 17 is peeled off at the interface between the first adhesion portion 17 and the light emitting surface 4 and follows the pressure-sensitive adhesive sheet 18.
  • the portion located on the first filling portion 33 also follows the pressure-sensitive adhesive sheet 18 together with the first attachment portion 17. That is, in the light reflection layer 14, the first adhesion portion 17 and the portion located on the first filling portion 33 are removed. That is, in the light reflecting layer 14, when projected in the front-rear direction and the left-right direction, the portion 34 (upper layer portion 34) located above the light emitting surface 4 is removed.
  • the upper surface 15 of the first filling portion 33 is flush with the light emitting surface 4 in the front-rear direction and the left-right direction. That is, the upper surface 15 of the first filling portion 33 and the light emitting surface 4 form the same plane.
  • thermosetting resin B-stage thermosetting resin
  • the light reflecting layer 14 is heated and cured (fully cured).
  • the heating temperature is, for example, 100 ° C. or more, preferably 120 ° C. or more, and for example, 200 ° C. or less, preferably 150 ° C. or less.
  • the heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and for example, 180 minutes or less, preferably 120 minutes or less.
  • a solvent capable of completely or partially dissolving or dispersing the light reflecting composition forming the first adhesion portion 17 is selected.
  • the solvent include organic solvents and aqueous solvents.
  • the organic solvent include alcohols such as methanol and ethanol, ketones such as acetone and methyl ethyl ketone, aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as toluene, and ethers such as tetrahydrofuran. Is mentioned.
  • alcohol and aromatic hydrocarbon are used.
  • Examples of the pressure-sensitive adhesive sheet 18 include the pressure-sensitive adhesive sheet 18 described in (1).
  • thermosetting resin B stage thermosetting resin
  • the light reflecting layer 14 is heated to be cured (completely cured).
  • the above-described solvent is then absorbed into the cloth, and the upper surface 15 of the cured light reflecting layer 14 is wiped with the cloth. Even when the upper surface 15 of the light reflecting layer 14 is wiped with this solvent, the first attached portion 17 remains.
  • the remaining first adhering portion 17 is removed using the pressure-sensitive adhesive sheet 18 described in (1).
  • polishing member examples include cloths such as buffs, brushes, and water blasting.
  • the upper surface 15 of the light reflecting layer 14 in the optical semiconductor element 16 with the light reflecting layer is polished by the polishing member. As a result, the upper layer portion 34 including the first adhesion portion 17 is removed.
  • the polishing timing of the upper surface 15 by the polishing member is either before or after the light reflecting layer 14 is cured when the resin is a thermosetting resin (B stage thermosetting resin). There may be.
  • Cutting Step As shown in FIG. 1D, the cutting step is performed after the first attached portion removing step (see FIG. 1C).
  • the light reflecting layer 14 is cut between the optical semiconductor elements 1 adjacent to each other. That is, in the cutting step, the first filling portion 33 is cut. Thereby, in the optical semiconductor element 16 with a light reflection layer, a plurality of optical semiconductor elements 1 are separated into pieces.
  • a dicing apparatus using a disc-shaped dicing saw (dicing blade) 19 for example, a cutting apparatus using a cutter, for example, cutting of a laser irradiation apparatus or the like A device is used.
  • a dicing apparatus is used.
  • the blade thickness T3 of the dicing saw 19 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less.
  • the light reflecting layer 14 is formed with cutting grooves 20 aligned along the front-rear direction and the left-right direction between the adjacent optical semiconductor elements 1. .
  • the cutting groove 20 penetrates the light reflecting layer 14 in the thickness direction.
  • the cutting groove 20 is not illustrated in FIG. 1D, the cutting groove 20 has a substantially grid pattern in a plan view.
  • the cutting groove 20 may also be formed in the pressure-sensitive adhesive layer 9 as shown in a partially enlarged view in FIG. 1D. In that case, the lower end portion of the cutting groove 20 reaches midway in the thickness direction of the pressure-sensitive adhesive layer 9. That is, the cutting groove 20 is cut into both the light reflecting layer 14 and the pressure sensitive adhesive layer 9.
  • the width W1 of the cutting groove 20 corresponds to a cutting device (preferably the blade thickness T3 of the dicing saw 19), and specifically, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more. It is 200 ⁇ m or less, preferably 100 ⁇ m or less.
  • the side surface 32 facing the cutting groove 20 is formed in the light reflecting layer 14 (first filling portion 33) by the cutting groove 20.
  • the optical semiconductor with a light reflection layer comprising one optical semiconductor element 1 separated into pieces, and the light reflection layer 14 that covers the peripheral side surface 5, exposes the light emitting surface 4, and is partitioned by the cutting groove 20.
  • the element 16 is obtained while being supported by the temporarily fixing sheet 2.
  • the support plate 8 is peeled from the pressure-sensitive adhesive layer 9 as shown by the downward arrow in FIG. 1E.
  • a treatment such as ultraviolet irradiation or heating is performed on the interface between the support plate 8 and the pressure-sensitive adhesive layer 9.
  • a treatment such as ultraviolet irradiation or heating is performed on the interface between the support plate 8 and the pressure-sensitive adhesive layer 9.
  • the optical semiconductor element 16 with the light reflecting layer is peeled from the pressure-sensitive adhesive layer 9.
  • a pick-up device including a collet and a suction pump connected thereto is used. Specifically, the collet is brought into contact with the light emitting surface 4, and then the suction pump is driven, and then the collet is pulled up.
  • an optical semiconductor element 16 with a light reflecting layer that includes one optical semiconductor element 1 and a light reflecting layer 14 that covers the peripheral side surface 5 of the optical semiconductor element 1 and exposes the light emitting surface 4.
  • the optical semiconductor element 16 with a light reflection layer is composed of only the optical semiconductor element 1 and the light reflection layer 14.
  • the side surface 32 of the light reflecting layer 14 is exposed to the side, and the light reflecting surface 14 and the light reflecting layer 14 located around the light emitting surface 4 are located.
  • the upper surface 15 of the electrode 6 is exposed on the upper side, and the lower surface of the electrode 6 is exposed on the lower side.
  • the light emitting surface 4 of the optical semiconductor element 1 is flush with the upper surface 15 of the light reflecting layer 14.
  • the optical semiconductor element 16 with a light reflecting layer is not an optical semiconductor device 60 (see FIG. 2) described below, that is, does not include the substrate 50 provided in the optical semiconductor device 60. That is, in the optical semiconductor element 16 with a light reflecting layer, the electrode 6 is not electrically connected to the terminal 51 provided on the substrate 50.
  • the optical semiconductor element 16 with the light reflecting layer is a component for manufacturing the optical semiconductor device 60, that is, a component for distributing the component alone and industrially usable.
  • the electrode 6 of the optical semiconductor element 16 with the light reflecting layer is electrically connected to a terminal 51 provided on the upper surface of the substrate 50.
  • the optical semiconductor element 16 with a light reflecting layer is flip-chip mounted on the substrate 50.
  • the optical semiconductor device 60 including the optical semiconductor element 16 with the light reflecting layer and the substrate 50 is obtained. That is, the optical semiconductor device 60 includes the substrate 50, the optical semiconductor element 1 mounted on the substrate 50, and the light reflection layer 14 that covers the peripheral side surface 5 of the optical semiconductor element 1.
  • the optical semiconductor device 60 preferably includes only the substrate 50, the optical semiconductor element 1, and the light reflecting layer 14.
  • the light emitting layer 7 is located above the optical semiconductor element 1, and the light emitting surface 4 is exposed upward from the light reflecting layer 14.
  • the light reflecting sheet 11 has a shape that is continuous in the front-rear direction and the left-right direction so as to include a plurality of optical semiconductor elements 1 when projected in the thickness direction. Therefore, as shown in FIG. 1B, the light reflecting sheet 11 can be easily filled in the first gap 10 (see FIG. 1A).
  • Second attached portion removing step of the first embodiment, first, the second attached portion 31 in the light reflecting layer 14 is removed using the pressure-sensitive adhesive sheet 18.
  • the resin contained in the light reflecting layer 14 is a thermosetting resin (B stage thermosetting resin)
  • the light reflecting layer 14 is heated and cured (completely cured).
  • the light reflecting layer 14 can be first heated and cured (completely cured), and then the second adhesion portion 31 in the light reflecting layer 14 can be removed using the pressure-sensitive adhesive sheet 18.
  • the solvent and the pressure-sensitive adhesive sheet 18 are used in combination. However, when the second adhesion portion 31 in the light reflection layer 14 can be sufficiently removed by the solvent, the second adhesion portion 31 in the light reflection layer 14 can be removed only by the solvent.
  • the light reflecting sheet 11 has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction on the lower surface of the release sheet 12.
  • a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction on the lower surface of the release sheet 12.
  • it can also have a pattern shape corresponding to the first gap 10.
  • the light reflecting sheet 11 has a plurality of openings 21 formed therein.
  • the opening 21 has the same shape as the outer shape of the optical semiconductor element 1 when projected in the thickness direction.
  • the light reflecting sheet 11 has the same shape as the first gap 10 when projected in the thickness direction.
  • the light reflecting layer 14 is attached to the light emitting surface 4 to form the first attached portion 17.
  • the light reflecting sheet 11 shown in FIG. 1A in the first embodiment is more likely to cause the first adhesion portion 17 (see FIG. 1B) than the light reflecting sheet 11 shown in FIG. 3 in the modification, that is, the present invention. This problem is likely to occur.
  • the cutting process (refer FIG. 1D) is implemented after the 1st adhesion part removal process (refer FIG. 1C).
  • a 1st adhesion part removal process (refer FIG. 1C) can also be implemented after a cutting process (refer FIG. 1D).
  • the cutting step is performed after the first attached portion removing step (see FIG. 1C).
  • the first attached portion removing step (see FIG. 1C) is performed by “(1) Method using pressure-sensitive adhesive sheet 18” and / or “(3 )) Method using polishing member ”, the pressure-sensitive adhesive of the pressure-sensitive adhesive sheet 18 and / or the polishing member enters the cutting groove 20 (see FIG. 1D) formed by the cutting step, and the first The filling portion 33 (the light reflecting layer 14 covering the peripheral side surface 5) may be removed by the pressure-sensitive adhesive sheet 18 and / or the polishing member.
  • it is 1st Embodiment, the above-mentioned fear can be eliminated.
  • the light reflecting sheet 11 is filled.
  • “(2) Method using solvent” can be adopted.
  • the hardness of the light reflecting sheet 11 of the B stage is set to 95 or more and 99 or less, for example.
  • the hardness of the light reflecting sheet 11 is calculated using, for example, a soft material hardness meter (manufactured by Citizen Seimitsu: CH-R01, sensor head diameter: 2 mm).
  • a soft material hardness meter 71 is prepared.
  • the soft material hardness meter 71 is connected to the plunger 74 extending in the vertical direction, the sensor head 72 provided at the lower end of the plunger 74, the cylinder 73 that houses the plunger 74, and the sensor head 72. Is provided with a processing device (not shown) configured to be able to detect the position.
  • the sensor head 72 has a substantially spherical shape.
  • the plunger 74 is applied to the light reflecting sheet 11 at an initial load of 8.3 mN for 5 seconds. At this time, the position of the lower end portion of the sensor head 72 is input to a processing device (not shown).
  • the sensor head 72 applies a load of 150 mN to the light reflecting sheet 11 for 20 seconds. Then, the plunger 74 sinks into the light reflecting sheet 11. At this time, the position of the lower end portion of the sensor head 72 is input to a processing device (not shown).
  • the distance d at which the sensor head 72 sinks from the surface of the light reflecting sheet 11 is measured. Based on the formula, the hardness is calculated.
  • Hardness [1- ⁇ Distance d into which the sensor head 72 sinks (substantial load subtraction ⁇ substantial initial load) ( ⁇ m) / 300 (reference value) ( ⁇ m) ⁇ ] ⁇ 100 It measures 5 times with respect to one light reflection sheet 11, The average value is obtained as hardness.
  • the filling time of the light reflecting sheet 11 is appropriately set according to the filling temperature.
  • the filling time of the light reflecting sheet 11 is, for example, 250 seconds or more and 600 seconds or less.
  • the filling temperature of the light reflecting sheet 11 is 90 ° C.
  • the filling time of the light reflecting sheet 11 is, for example, not less than 400 seconds and not more than 750 seconds.
  • the filling temperature of the light reflecting sheet 11 is 80 ° C.
  • the filling time of the light reflecting sheet 11 is, for example, not less than 800 seconds and not more than 1,000 seconds.
  • the first attached portion 17 when the first attached portion 17 is removed by “(2) Method using a solvent” (described later), the first attached portion 17 can be more reliably removed.
  • the peeling step is performed as shown in FIG. 1E, but the peeling step may not be performed.
  • the optical semiconductor element 1 is separated into one piece and the light reflecting layer 14, and is supported by the temporary fixing sheet 2 (the support plate 8 and the pressure-sensitive adhesive layer 9).
  • the plurality of optical semiconductor elements 16 with a light reflection layer in the state are also components for producing the optical semiconductor device 60, and are distributed as individual components and used as industrially usable devices.
  • the plurality of optical semiconductor elements 16 with the light reflecting layer supported only by the pressure-sensitive adhesive layer 9 are also components for producing the optical semiconductor device 60. It is distributed alone and used as an industrially available device.
  • a phosphor layer or the like may be provided on the light emitting surface 4 of the optical semiconductor element 16 with a light reflecting layer shown in FIG. 1E.
  • a second embodiment of the present invention (one embodiment of a method for manufacturing a light reflecting layer and an optical semiconductor element with a phosphor layer) includes a temporary fixing step (see FIG. 4A) and a phosphor layer forming step (FIGS. 4B and 4C).
  • a light reflecting sheet filling step (see FIG. 4D), a second attached portion removing step (see FIG. 5E), a cutting step (see FIG. 5F), and a peeling step (see FIG. 5G).
  • the temporary fixing step is a step of temporarily fixing a plurality of optical semiconductor elements 1 to the temporary fixing sheet 2 at intervals.
  • the phosphor layer formation step is performed after the temporary fixing step (see FIG. 4A).
  • the phosphor layer 26 is formed on the light emitting surfaces 4 and the peripheral side surfaces 5 of the plurality of optical semiconductor elements 1 so that the second gaps 23 are formed between the adjacent optical semiconductor elements 1. To do.
  • a phosphor sheet 24 is prepared.
  • the phosphor sheet 24 is provided on the phosphor member 25.
  • the phosphor member 25 includes a release sheet 12 and a phosphor sheet 24 supported by the release sheet 12.
  • the phosphor member 25 includes only the release sheet 12 and the phosphor sheet 24.
  • the phosphor sheet 24 is formed on the lower surface of the release sheet 12 and has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction.
  • the phosphor sheet 24 is prepared from, for example, a phosphor composition containing a phosphor and a resin.
  • the phosphor converts the wavelength of light emitted from the optical semiconductor element 1.
  • Examples of the phosphor include a yellow phosphor that can convert blue light into yellow light, and a red phosphor that can convert blue light into red light.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce
  • red phosphor examples include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • the phosphor is preferably a yellow phosphor, more preferably a garnet phosphor.
  • Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.
  • the average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less. But there is.
  • Fluorescent substances can be used alone or in combination.
  • the blending ratio of the phosphor is, for example, 5% by mass or more, preferably 10% by mass or more, and for example, 80% by mass or less, preferably 70% by mass or less with respect to the phosphor composition.
  • the resin is a matrix that uniformly disperses the phosphor in the phosphor composition, and is, for example, a component that imparts to the phosphor sheet 24 a viscosity capable of filling the phosphor sheet 24 into the first gap 10 when heated. .
  • the resin is the same as the resin contained in the light reflecting composition in the first embodiment.
  • the blending ratio of the resin is the balance of the blending ratio of the phosphor (and the light reflection component and / or additive described below).
  • the fluorescent composition may contain a light reflection component and / or an additive in an appropriate ratio.
  • the phosphor sheet 24 for example, a phosphor, a resin, and a light reflection component and / or an additive that are added as necessary are blended to prepare a varnish of the phosphor composition. Subsequently, the varnish is applied to the surface of the release sheet 12. Thereafter, when the fluorescent composition contains a thermosetting resin that can be in a B-stage state, the fluorescent composition is B-staged (semi-cured). Specifically, the fluorescent composition is heated. Thereby, the phosphor sheet 24 is formed.
  • the physical properties (storage shear modulus G ′ and the like) of the phosphor sheet 24 are appropriately selected from the physical properties of the light reflecting composition in the first embodiment.
  • the thickness of the phosphor sheet 24 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 1,000 ⁇ m or less, preferably 450 ⁇ m or less.
  • the phosphor sheet 24 faces the light reflecting member 13 to the upper side of the plurality of optical semiconductor elements 1 temporarily fixed to the temporary fixing sheet 2 and projects them in the thickness direction.
  • the size (the length in the front-rear direction and the length in the left-right direction) including the plurality of optical semiconductor elements 1 is set.
  • the phosphor member 25 is hot pressed against the temporarily fixed sheet 2.
  • the phosphor sheet 24 (phosphor composition) is filled in the first gap 10 by a hot press (phosphor sheet filling step).
  • a portion filled in the first gap 10 is a second filling portion 35.
  • the phosphor sheet 24 facing the plurality of optical semiconductor elements 1 covers the light emitting surfaces 4 of the plurality of optical semiconductor elements 1.
  • the phosphor layer 26 is formed on the light emitting surface 4 and the peripheral side surface 5 of the plurality of optical semiconductor elements 1 from the phosphor sheet 24.
  • the phosphor layer 26 has a plurality of optical semiconductor elements 1 embedded therein.
  • the phosphor layer 26 has a continuous shape in the front-rear direction and the left-right direction. Further, the phosphor layer 26 has an upper surface 27 as an example of a flat surface.
  • the phosphor layer 26 also covers the surface exposed from the electrode 6 in the electrode surface 3 of the optical semiconductor element 1.
  • the phosphor layer 26 is cut between the adjacent optical semiconductor elements 1.
  • the phosphor layer 26 between the optical semiconductor elements 1 adjacent to each other is obtained by a disc-shaped dicing saw (dicing blade) 28 (see FIG. 4B) having a predetermined width (blade thickness T4). That is, the second filling portion 35 is cut.
  • dicing blade dicing blade
  • the dicing saw 28 has the same width (same blade thickness T4) as it goes from the inner side to the outer side in the radial direction.
  • the blade thickness T4 of the dicing saw 28 is thicker than the blade thickness T3 (see FIG. 1D) of the dicing saw 19 obtained by cutting the light reflecting layer 14 in the first embodiment.
  • it is 150% or more, preferably 200% or more, more preferably 300% or more, and for example, 10,000% or less.
  • the blade thickness T4 of the dicing saw 28 is appropriately set corresponding to the width W2 (see FIG. 4C) of the second gap 23 described below, and is, for example, 100 ⁇ m or more, preferably 200 ⁇ m or more.
  • it is 2,000 ⁇ m or less, preferably 1,000 ⁇ m or less.
  • the phosphor layer 26 between the adjacent optical semiconductor elements 1 is cut by etching (phosphor layer removing step).
  • a second gap 23 is formed in the phosphor layer 26 between the adjacent optical semiconductor elements 1.
  • the second gap 23 penetrates the phosphor layer 26 in the thickness direction.
  • the second gap 23 is formed in the second filling portion 35 and the portion located on the second filling portion 35 in the phosphor layer 26.
  • the second gap 23 has a substantially grid shape in plan view.
  • the opening cross-sectional shape and the opening cross-sectional area at the lower end thereof are the same as the opening cross-section and the opening cross-sectional area at the upper end.
  • the width W3 of the phosphor layer 26 formed on the peripheral side surface 5 is adjusted to a desired dimension. That is, in cutting the phosphor layer 26 formed on the peripheral side surface 5, the phosphor layer 26 is trimmed so that the width W3 of the phosphor layer 26 has a predetermined dimension.
  • the width W3 of the phosphor layer 26 formed on the peripheral side surface 5 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 2,000 ⁇ m or less, preferably 1,000 ⁇ m or less.
  • the width W3 of the phosphor layer 26 is the same over the thickness direction.
  • the width W2 of the second gap 23 is, for example, 100 ⁇ m or more, preferably 200 ⁇ m or more, and for example, 2,000 ⁇ m or less, preferably 1,000 ⁇ m or less.
  • the width W2 of the second gap 23 is the same across the thickness direction.
  • a plurality of phosphor layers 26 are formed corresponding to the plurality of optical semiconductor elements 1 in a pattern covering the light emitting surfaces 4 and the peripheral side surfaces 5 of the plurality of optical semiconductor elements 1.
  • Each of the plurality of phosphor layers 26 has a substantially U-shaped cross section that opens downward.
  • the light reflecting sheet filling step is performed after the phosphor layer forming step (FIGS. 4B and 4C).
  • the light reflecting sheet 11 (see FIG. 4C) is filled in the second gap 23.
  • the light reflecting sheet 11 is the same as the light reflecting sheet 11 of the first embodiment.
  • the light reflecting member 13, the temporary fixing sheet 2, the optical semiconductor element 1, and the phosphor layer 26 are set in a press machine so that the light reflecting sheet 11 and the phosphor layer 26 face each other. For example, hot pressing.
  • the light reflecting sheet 11 (light reflecting composition) is filled in the second gap 23 by this pressing. Thereby, the light reflection layer 14 made of the light reflection composition (light reflection sheet 11) is formed in a shape filled in the second gap 23. In the light reflecting layer 14, the portion filled in the second gap 23 is a third filling portion 37.
  • the light reflecting layer 14 (third filling portion 37) covers the peripheral side surface 29 of the phosphor layer 26 formed on the peripheral side surface 5 of the optical semiconductor element 1. Further, the light reflecting layer 14 is coated and attached to the upper surface 27 of the phosphor layer 26 formed on the light emitting surface 4 of the optical semiconductor element 1. In the light reflecting layer 14, the portion attached to the upper surface 27 of the phosphor layer 26 is a second attached portion 31.
  • the light reflecting layer 14 has a flat upper surface 15.
  • the second adhesion portion 31 and the portion located on the third filling portion 37 are flush with each other in the front-rear direction and the left-right direction.
  • the thickness T2 of the second adhesion portion 31 is, for example, 1 ⁇ m or more, for example, 50 ⁇ m or less, and further 200 ⁇ m or less.
  • the release sheet 12 is peeled from the light reflecting layer 14 as shown by the arrow in FIG. 4D. Specifically, the release sheet 12 is peeled off from the upper surface 15 of the light reflecting layer 14.
  • the upper surface 15 of the light reflecting layer 14 is exposed. Thereby, the light reflecting layer 14 having the plurality of optical semiconductor elements 1, the phosphor layer 26 formed on the light emitting surface 4 and the peripheral side surface 5 of the optical semiconductor element 1, the third filling portion 37 and the second adhesion portion 31. And the optical semiconductor element 30 with a phosphor layer are obtained in a state where the electrode surface 3 of the optical semiconductor element 1 is temporarily fixed to the temporary fixing sheet 2.
  • 2nd adhesion part removal process As shown to FIG. 5E, a 2nd adhesion part removal process is implemented after a light reflection sheet filling process (refer FIG. 4D).
  • the second attached portion removing step the second attached portion 31 is removed.
  • the portion of the light reflecting layer 14 located on the third filling portion 37 is also removed together with the second adhesion portion 31. That is, the portion 36 (upper layer portion 36) located above the upper surface 27 of the phosphor layer 26 is removed in the light reflecting layer 14 when projected in the front-rear direction and the left-right direction.
  • the method for removing the second adhering portion 31 is the same as the method for removing the first adhering portion 17 exemplified in the first embodiment. Specifically, (1) a method using the pressure-sensitive adhesive sheet 18, for example, although not shown, (2) a method using a solvent, for example, although not shown, (3) a method using a polishing member is employed.
  • the pressure-sensitive adhesive sheet 18 is used to remove the second adhesion portion 31 in the light reflecting layer 14, and then the resin contained in the light reflecting layer 14 is a thermosetting resin (B stage).
  • the light reflecting layer 14 is heated to be cured (completely cured).
  • the solvent and the pressure-sensitive adhesive sheet 18 are used in combination.
  • thermosetting resin B stage thermosetting resin
  • the light reflecting layer 14 is heated and cured. (Completely cured).
  • the solvent is then absorbed into the cloth, and the upper surface 15 of the cured light reflecting layer 14 is wiped with the cloth. Even if the upper surface 15 of the light reflecting layer 14 is wiped with this solvent, the second attached portion 31 remains.
  • the polishing timing of the upper surface 15 by the polishing member is either before or after the light reflecting layer 14 is cured when the resin is a thermosetting resin (B stage thermosetting resin). There may be.
  • the upper surface 15 of the third filling portion 37 is flush with the upper surface 27 of the phosphor layer 26 in the front-rear direction and the left-right direction. That is, the upper surface 27 of the phosphor layer 26 exposed from the light reflecting layer 14 and the upper surface 15 of the third filling portion 37 of the light reflecting layer 14 form the same plane.
  • Cutting Step As shown in FIG. 5F, the cutting step is performed after the second attached portion removing step (see FIG. 5E).
  • the light reflecting layer 14 is cut between the optical semiconductor elements 1 adjacent to each other. Specifically, the third filling portion 37 (see FIG. 5E) is cut.
  • the method for cutting the light reflecting layer 14 is the same as that of the first embodiment.
  • the cutting groove 20 may also be formed in the pressure-sensitive adhesive layer 9 although not shown in FIG. 5F. In that case, the lower end portion of the cutting groove 20 reaches midway in the thickness direction of the pressure-sensitive adhesive layer 9. That is, the cutting groove 20 is cut into both the light reflecting layer 14 and the pressure sensitive adhesive layer 9.
  • the cutting grooves 20 aligned along the front-rear direction and the left-right direction are formed between the adjacent optical semiconductor elements 1.
  • the support plate 8 is peeled from the pressure-sensitive adhesive layer 9 as shown by the downward arrow in FIG. 5G.
  • a plurality of light reflecting layers and optical semiconductor elements 30 with a phosphor layer which are aligned in the front-rear direction and the left-right direction with a space (width W1) therebetween, are supported by the pressure-sensitive adhesive layer 9. ,can get.
  • the light reflecting layer and the optical semiconductor element 30 with the phosphor layer are peeled from the pressure-sensitive adhesive layer 9.
  • the method of peeling the light reflecting layer and the optical semiconductor element 30 with the phosphor layer from the pressure-sensitive adhesive layer 9 is the same as the method exemplified in the first embodiment.
  • one optical semiconductor element 1, a phosphor layer 26 covering the light emitting surface 4 and the peripheral side surface 5 of the optical semiconductor element 1, and a light reflecting layer 14 covering the peripheral side surface 29 of the phosphor layer 26 are provided.
  • the optical semiconductor element 30 with a light reflection layer and a phosphor layer is obtained.
  • the optical semiconductor element 30 with the light reflection layer and the phosphor layer includes only the optical semiconductor element 1, the phosphor layer 26, and the light reflection layer 14.
  • the side surface 32 of the light reflecting layer 14 is exposed to the side, and the upper surface 27 of the phosphor layer 26 and the upper surface of the light reflecting layer 14 located around the upper surface 27. 15 is exposed on the upper side, and the lower surface of the electrode 6 is exposed on the lower side.
  • the upper surface 27 of the phosphor layer 26 is flush with the upper surface 15 of the light reflecting layer 14.
  • the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is not the optical semiconductor device 60 (see FIG. 6), that is, does not include the substrate 50 provided in the optical semiconductor device 60. That is, in the optical semiconductor element 30 with the light reflecting layer and the phosphor layer, the electrode 6 is not electrically connected to the terminal 51 provided on the substrate 50. Furthermore, the optical semiconductor element 30 with the light reflection layer and the phosphor layer is a component for manufacturing the optical semiconductor device 60, that is, a component for manufacturing the optical semiconductor device 60. It is a device.
  • the electrode 6 of the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is electrically connected to a terminal 51 provided on the upper surface of the substrate 50.
  • the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is flip-chip mounted on the substrate 50.
  • the optical semiconductor device 60 including the optical semiconductor element 30 with the light reflection layer and the phosphor layer and the substrate 50 is obtained. That is, the optical semiconductor device 60 includes the substrate 50, the optical semiconductor element 1 mounted on the substrate 50, the phosphor layer 26 that covers the light emitting surface 4 and the peripheral side surface 5 of the optical semiconductor element 1, and the phosphor layer 26. A light reflecting layer 14 covering the peripheral side surface 29.
  • the optical semiconductor device 60 preferably includes only the substrate 50, the optical semiconductor element 1, the phosphor layer 26, and the light reflecting layer 14. In the optical semiconductor device 60, the phosphor layer 26 and the light reflecting layer 14 are in contact with the substrate 50.
  • the phosphor sheet 24 can be simply filled in the first gap 10, and then the second gap 23 can be easily formed as shown in FIG. 4C. it can.
  • the phosphor sheet 24 shown in FIG. 4A has a shape that is continuous in the front-rear direction and the left-right direction so as to include the plurality of optical semiconductor elements 1 when projected in the thickness direction. Therefore, as shown in FIG. 4B, the phosphor sheet 24 can be easily filled in the first gap 10.
  • Second attached portion removing step of the second embodiment, first, the second attached portion 31 in the light reflecting layer 14 is removed using the pressure-sensitive adhesive sheet 18.
  • the resin contained in the light reflecting layer 14 is a thermosetting resin (B stage thermosetting resin)
  • the light reflecting layer 14 is heated and cured (completely cured).
  • the light reflecting layer 14 can be first heated and cured (completely cured), and then the second adhesion portion 31 in the light reflecting layer 14 can be removed using the pressure-sensitive adhesive sheet 18.
  • Second attached portion removing step of the second embodiment, a solvent and a pressure-sensitive adhesive sheet 18 are used in combination. However, when the second adhesion portion 31 in the light reflection layer 14 can be sufficiently removed by the solvent, the second adhesion portion 31 in the light reflection layer 14 can be removed only by the solvent.
  • the fluorescent substance layer formation process is implemented using the fluorescent substance sheet 24, without using the fluorescent substance sheet 24, the varnish of a fluorescent composition is used, for example.
  • a phosphor layer 26 having a continuous shape in the front-rear direction and the left-right direction as shown in FIG. 4B can be formed.
  • the phosphor layer 26 is cut.
  • the light reflection sheet 11 has a layer (flat plate) shape which continues in the front-back direction and the left-right direction in the whole lower surface of the peeling sheet 12, FIG. As shown, it may have a pattern shape corresponding to the second gap 23.
  • a plurality of openings 21 are formed in the light reflecting sheet 11.
  • the opening 21 has the same shape as the outer shape of the phosphor layer 26 when projected in the thickness direction.
  • the light reflecting sheet 11 has the same shape as the second gap 23 when projected in the thickness direction.
  • the light reflecting layer 14 is attached to the upper surface 27 of the phosphor layer 26 to form the second attached portion 31.
  • the light reflecting sheet 11 shown in FIG. 4C in the second embodiment is more likely to produce the second attached portion 31 than the light reflecting sheet 11 shown in FIG. .
  • the cutting process (refer FIG. 5F) is implemented after the 2nd adhesion part removal process (refer FIG. 5E).
  • the second attached portion removing step (see FIG. 5E) can be performed.
  • a cutting step is performed after the second attached portion removing step (see FIG. 5E) (second embodiment).
  • the attached portion removing step is performed by “(1) Method using pressure-sensitive adhesive sheet 18” and / or “(3) Polishing”. If the method using the member is performed, the pressure-sensitive adhesive of the pressure-sensitive adhesive sheet 18 and / or the abrasive member enters the cutting groove 20 formed by the cutting step, and the third filling portion 37 (phosphor layer) 26 may be removed by the pressure sensitive adhesive sheet 18 and / or the polishing member. On the other hand, if it is 2nd Embodiment, the above-mentioned fear can be eliminated.
  • the filling temperature and time of the light reflection sheet 11 are controlled.
  • the second attached portion removing step can be performed, and then the light reflecting layer 14 can be C-staged (completely cured).
  • “(2) Method using solvent” is preferably employed.
  • the hardness of the light reflecting sheet 11 of the B stage is set to 95 or more and 99 or less, for example. The measurement of hardness is the same as described above.
  • the filling temperature and filling time of the light reflecting sheet 11 are the same as described above.
  • the peeling process is performed, but the peeling process may not be performed. That is, as shown in FIG. 5F, the optical semiconductor element 1, the light reflecting layer 14, and the phosphor layer 26, which are separated into pieces, are provided, and the temporary fixing sheet 2 (the support plate 8 and the pressure-sensitive adhesive layer).
  • the plurality of optical semiconductor elements 16 with a light reflecting layer supported in 9) are also components for producing the optical semiconductor device 60, and are distributed as individual components and used as industrially available devices.
  • the plurality of optical semiconductor elements 16 with a light reflecting layer supported only by the pressure-sensitive adhesive layer 9 are also components for producing the optical semiconductor device 60 and can be distributed and used industrially. Used as a simple device.
  • a third embodiment of the present invention (another embodiment of a method for manufacturing a light reflecting layer and an optical semiconductor element with a phosphor layer) includes a temporary fixing step (see FIG. 8A) and a phosphor sheet laminating step (see FIG. 8B). And a light reflecting sheet filling step (see FIG. 8C), a second attached portion removing step (see FIG. 9D), a cutting step (see FIG. 9E), and a peeling step (see FIG. 9F).
  • Phosphor sheet laminating step As shown in FIG. 8B, the phosphor sheet laminating step is performed after the provisional step (see FIG. 8A).
  • a phosphor sheet 24 having a pattern corresponding to the light emitting surfaces 4 of the plurality of light reflecting sheets 11 is prepared when projected in the thickness direction.
  • the phosphor sheet 24 has a second opening 38 having the same pattern as the first gap 10 when projected in the thickness direction. Thereby, the phosphor sheet 24 is partitioned by the second opening 38 and has the same size and pattern shape as the light emitting surface 4 of the light reflecting sheet 11.
  • the phosphor sheet 24 may be prepared from a phosphor ceramic plate.
  • the phosphor member 25 is composed only of the phosphor sheet 24, and the phosphor member 25 may not include the release sheet 12 (see the phantom line in FIG. 8A).
  • the phosphor sheet 24 is laminated on the light emitting surface 4 as shown in FIG. 8B.
  • the phosphor sheet 24 is formed as a phosphor layer 26 that covers the light emitting surface 4 of the optical semiconductor element 1.
  • the second gap 23 is formed from the first gap 10 of the optical semiconductor element 1 and the second opening 38 (see FIG. 8A) of the phosphor layer 26 that communicates with the upper side of the first gap 10.
  • Both the peripheral side surface 29 of the phosphor layer 26 and the peripheral side surface 5 of the optical semiconductor element 1 face the second gap 23 and are flush with each other in the thickness direction.
  • the light reflecting sheet filling step is performed after the phosphor sheet stacking step (see FIG. 8B).
  • the light reflecting sheet 11 (see FIG. 8B) is filled in the second gap 23.
  • the light reflecting layer 14 has the third filling portion 37 that continuously covers the peripheral side surface 5 of the optical semiconductor element 1 and the peripheral side surface 29 of the phosphor layer 26.
  • the light reflecting layer 14 is attached to the upper surface 27 of the phosphor layer 26 so as to have a second attached portion 31. Further, the light reflecting layer 14 covers the surface exposed from the electrode 6 in the electrode surface 3 of the optical semiconductor element 1.
  • the phosphor layer 26 covering the light emitting surface 4 of the optical semiconductor element 1, the peripheral side surface 29 of the phosphor layer 26, and the peripheral side surface 5 of the optical semiconductor element 1
  • An optical semiconductor element 30 with a light reflection layer and a phosphor layer provided with the light reflection layer 14 to be coated is obtained.
  • the electrode 6 of the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is electrically connected to the terminal 51 of the substrate 50. Accordingly, the substrate 50, the optical semiconductor element 1 mounted on the substrate 50, the phosphor layer 26 covering the light emitting surface 4 of the optical semiconductor element 1, the peripheral side surface 29 of the phosphor layer 26, and the optical semiconductor element An optical semiconductor device 60 including the light reflecting layer 14 covering the one peripheral side surface 5 is obtained.
  • the light reflecting layer 14 is formed on the peripheral side surface 5 of the plurality of optical semiconductor elements 1, so that light is emitted from the peripheral side surface 5 of the optical semiconductor element 1.
  • the reflected light can be efficiently reflected by the light reflecting layer 14.
  • a second dicing saw (dicing blade) 28 having the same blade thickness T4 is used from the radially inner side toward the outer side. Then, the phosphor layer 26 is cut.
  • the phosphor layer 26 is cut using a second dicing saw (dicing blade) 43 whose blade thickness becomes narrower from the inner side toward the outer side in the radial direction.
  • a second dicing saw (dicing blade) 43 whose blade thickness becomes narrower from the inner side toward the outer side in the radial direction.
  • the fourth embodiment of the present invention (one embodiment of a method for manufacturing a light reflecting layer and an optical semiconductor element with a phosphor layer) includes a temporary fixing step (see FIG. 11A) and a phosphor layer forming step (FIGS. 11A to C).
  • a light reflecting sheet filling step (see FIG. 11D), a second attached portion removing step (see FIG. 12E), a cutting step (see FIG. 12F), and a peeling step (see FIG. 12G). Processes different from those of the second embodiment will be described.
  • Phosphor layer forming step is a step (1) of forming the phosphor layer 26 on the light emitting surface 4 and the peripheral side surface 5 of the plurality of optical semiconductor elements 1 (see FIG. 11A), and the plurality of optical semiconductor elements 1. And the step (2) of transferring the phosphor layer 26 to the second fixing sheet 40 (see FIG. 11B) and the step (3) of cutting the phosphor layer 26 supported by the second fixing sheet 40 (see FIG. 11C). ). In the phosphor layer forming step, step (1), step (2), and step (3) are sequentially performed.
  • step (1) is the same as the “phosphor layer forming step” (see FIGS. 4B and 4C) in the second embodiment.
  • the second fixing sheet 40 includes a second support plate 41 and a second pressure-sensitive adhesive layer 42 disposed on the second support plate 41.
  • the second fixing sheet 40 is a transfer sheet on which the plurality of optical semiconductor elements 1 and the phosphor layer 26 are transferred from the temporary fixing sheet 2.
  • Each of the second support plate 41 and the second pressure-sensitive adhesive layer 42 is the same as each of the support plate 8 and the pressure-sensitive adhesive layer 9 exemplified in the second embodiment.
  • the second fixing is performed on the upper side of the plurality of optical semiconductor elements 1 and the phosphor layer 26.
  • the sheet 40 is disposed.
  • the second pressure-sensitive adhesive layer 42 faces the phosphor layer 26.
  • the second pressure-sensitive adhesive layer 42 and the phosphor layer 26 are brought into contact with the second fixing sheet 40 in proximity to the phosphor layer 26. Then, the some optical semiconductor element 1 and the fluorescent substance layer 26 are peeled from the pressure sensitive adhesive layer 9 (temporary fixing sheet 2).
  • the plurality of optical semiconductor elements 1 and the phosphor layers 26 are transferred from the temporary fixing sheet 2 to the second fixing sheet 40.
  • the some optical semiconductor element 1 and the fluorescent substance layer 26 are obtained in the state supported by the 2nd fixing sheet 40.
  • FIG. The electrode 6 and the electrode side surface 3 in the optical semiconductor element 1 are directed upward.
  • the electrode 6 is exposed on the upper side.
  • the light emitting surface 4 faces downward.
  • step (3) the phosphor layer 26 (second filling portion 35) is cut from the phosphor layer 26 using a second dicing saw (dicing blade) 43.
  • the second dicing saw 43 has a shape in which the blade thickness gradually decreases from the center toward the radially outer side.
  • the second dicing saw 43 has a tapered surface that becomes narrower toward the outside in the radial direction.
  • the second dicing saw 43 has a substantially V-shaped cross section.
  • the angle ⁇ of the tapered surface of the second dicing saw 43 with respect to the virtual plane along the radial direction is, for example, 10 degrees or more, preferably 30 degrees or more, and, for example, 60 degrees or less, preferably 80 degrees or less. It is.
  • the second dicing saw 43 is disposed on the upper side of the phosphor layer 26, and then the second dicing saw 43 is lowered, and the tip of the second dicing saw 43 (radially outer end). Part) is brought into contact with the upper surface of the phosphor layer 26. Subsequently, the tip of the second dicing saw 43 is lowered until it penetrates all the thickness direction of the phosphor layer 26 and further contacts the second pressure-sensitive adhesive layer 42. Subsequently, the second dicing saw 43 is moved in the front-rear direction and the left-right direction.
  • the second gap 23 having a smaller opening cross-sectional area is formed toward the lower side.
  • the second gap 23 has a shape corresponding to the tapered surface of the second dicing saw 43. That is, the second gap 23 has a shape that becomes smaller as the opening cross-sectional area decreases downward.
  • the second gap 23 has a shape in which a distance between two opposing sides extending in the thickness direction becomes narrower as viewed in a cross-sectional view.
  • the second gap 23 has a substantially triangular shape that is pointed downward.
  • the second gap 23 penetrates the phosphor layer 26 in the thickness direction. Furthermore, the lower end portion of the second gap 23 may reach the middle of the second pressure-sensitive adhesive layer 42 in the thickness direction, as shown in the partially enlarged view of FIG. 11C. That is, the second gap 23 may be cut into both the phosphor layer 26 and the second pressure-sensitive adhesive layer 42.
  • the peripheral side surface 29 of the phosphor layer 26 is a tapered surface that is inclined inward in the left-right direction (on the side of the optical semiconductor element 1 between the adjacent optical semiconductor elements 1) toward the upper side (electrode 6 side).
  • the distance (width) W4 between the lower ends of the peripheral side surfaces 29 of the adjacent optical semiconductor elements 1 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 600 ⁇ m or less, preferably 400 ⁇ m or less.
  • the third filling portion 37 which is a portion filled in the second gap 23, has the same shape as the second gap 23 (a substantially trapezoidal cross section having an upper base longer than the lower bottom). Further, the light reflecting layer 14 has a second attachment portion 31 attached to the upper surface 27 of the phosphor layer 26 facing the electrode side surface 3.
  • the plurality of optical semiconductor elements 1, the phosphor layer 26 that covers the electrode side surface 3, the light emitting surface 4, and the peripheral side surface 5 of the optical semiconductor element 1, and the light reflecting layer that covers the peripheral side surface 29 of the phosphor layer 26. 14 and the optical semiconductor element 30 with the light reflection layer and the phosphor layer are obtained in a state of being temporarily fixed to the second fixing sheet 40.
  • one optical semiconductor element 1 a phosphor layer 26 that covers the electrode side surface 3, the light emitting surface 4, and the peripheral side surface 5 of the optical semiconductor element 1, and a light reflection layer that covers the peripheral side surface 29 of the phosphor layer 26. 14 and an optical semiconductor element 30 with a phosphor layer and a phosphor layer.
  • the optical semiconductor element 30 with the light reflection layer and the phosphor layer includes only the optical semiconductor element 1, the phosphor layer 26, and the light reflection layer 14.
  • the side surface 32 of the light reflecting layer 14 is exposed to the side.
  • the upper surface 27 of the phosphor layer 26, the upper surface 15 of the light reflecting layer 14 located around the upper surface 27, and the electrode 6 are exposed on the upper side, and they are flush with each other.
  • the lower surface of the phosphor layer 26 and the lower surface of the light reflecting layer 14 are exposed on the lower side, and they are flush with each other.
  • the inner side surface of the light reflecting layer 14 is a tapered surface corresponding to the peripheral side surface 29 of the phosphor layer 26.
  • the outer surface 32 of the light reflecting layer 14 is a vertical surface along the thickness direction.
  • the width W5 of the upper end portion of the light reflecting layer 14 (the electrode side surface 3 side end portion of the optical semiconductor element 1) is expressed by the following formula when the thickness of the phosphor layer 26 is T5.
  • W5 (T5 ⁇ tan ⁇ ) + W6 ( ⁇ is an angle ⁇ (see FIG. 13) formed by the peripheral side surface (outer surface) 29 of the phosphor layer 26 and the peripheral side surface (outer surface) of the light reflecting layer 14, and the second dicing saw 43 (FIG. 11B) described above.
  • W6 is the width of the lower end portion of the light reflecting layer 14 and the width of the end portion of the optical semiconductor element 1 on the light emitting surface 4 side.
  • the width W5 of the upper end portion of the light reflecting layer 14 is, for example, 25 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 300 ⁇ m or less, preferably 200 ⁇ m or less.
  • the electrode 6 of the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is electrically connected to a terminal 51 provided on the upper surface of the substrate 50.
  • the optical semiconductor element 30 with the light reflecting layer and the phosphor layer is flip-chip mounted on the substrate 50.
  • the optical semiconductor device 60 includes the substrate 50, the optical semiconductor element 1 mounted on the substrate 50, the phosphor layer 26 that covers the electrode side surface 3, the light emitting surface 4, and the peripheral side surface 5 of the optical semiconductor element 1.
  • a light reflecting layer 14 that covers the peripheral side surface 29 of the body layer 26.
  • the optical semiconductor device 60 preferably includes only the substrate 50, the optical semiconductor element 1, the phosphor layer 26, and the light reflecting layer 14. In the optical semiconductor device 60, the phosphor layer 26 and the light reflecting layer 14 are in contact with the substrate 50.
  • the phosphor layer 26 is cut using a second dicing saw (dicing blade) 43 so as to be longer than the lower bottom.
  • a second gap 23 having a substantially trapezoidal cross section with a bottom is formed, and a third filling portion 37 of the light reflecting layer 14 is formed in the second gap 23 as shown in FIG. 11D.
  • the inner surface of the light reflecting layer 14 can be easily tapered.
  • the inner surface of the light reflecting layer 14 is the above-described tapered surface, so that the luminance can be improved.
  • the phosphor layer 26 is cut using a second dicing saw (dicing blade) 43.
  • the present invention is not limited to the above as long as the second gap 23 having a substantially trapezoidal cross section having an upper base longer than the lower base can be formed.
  • a water jet can also be used.
  • An optical semiconductor element with a light reflection layer, an optical semiconductor element with a light reflection layer, and a phosphor layer are used in a method for manufacturing an optical semiconductor device.

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Abstract

La présente invention concerne un procédé de production d'un élément semi-conducteur optique comportant une couche réfléchissant la lumière qui comprend : une étape selon laquelle des surfaces d'électrodes d'une pluralité d'éléments semi-conducteurs optiques sont fixées temporairement à une feuille de fixation temporaire à une certaine distance les uns des autres, chacun desdits éléments semi-conducteurs optiques comportant une surface d'électrode sur laquelle est disposée une électrode, une surface électroluminescente qui fait face à la surface d'électrode et sur laquelle est disposée une couche électroluminescente, et une surface de connexion qui connecte les bords périphériques de la surface d'électrode et de la surface électroluminescente ; une étape selon laquelle un premier vide entre des éléments semi-conducteurs optiques adjacents est rempli d'une feuille réfléchissant la lumière de sorte que des couches réfléchissant la lumière sont respectivement formées sur les surfaces de connexion de la pluralité d'éléments semi-conducteurs optiques ; une étape selon laquelle des couches réfléchissant la lumière adhérant aux surfaces électroluminescentes de la pluralité d'éléments semi-conducteurs optiques sont retirées ; et une étape selon laquelle chaque couche réfléchissant la lumière est coupée entre des éléments semi-conducteurs optiques adjacents respectifs.
PCT/JP2016/057597 2015-03-16 2016-03-10 Procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et procédé de production d'élément semi-conducteur optique à couche réfléchissant la lumière et couche de substance fluorescente WO2016148019A1 (fr)

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US15/556,020 US10424703B2 (en) 2015-03-16 2016-03-10 Method of producing an optical semiconductor device
CN201680016213.0A CN107431115A (zh) 2015-03-16 2016-03-10 带光反射层的光半导体元件的制造方法、带光反射层和荧光体层的光半导体元件的制造方法
EP16764849.2A EP3273491B1 (fr) 2015-03-16 2016-03-10 Élément semi-conducteur optique à couche réfléchissant la lumière et couche de substance fluorescente
KR1020177025605A KR102541533B1 (ko) 2015-03-16 2016-03-10 광 반사층 부착 광 반도체 소자, 및 광 반사층 및 형광체층 부착 광 반도체 소자의 제조 방법
US16/523,627 US10923639B2 (en) 2015-03-16 2019-07-26 Method for producing an optical semiconductor device

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JP2015052523 2015-03-16
JP2015-052523 2015-03-16
JP2016043581A JP6762736B2 (ja) 2015-03-16 2016-03-07 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法
JP2016-043581 2016-03-07

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231974A (zh) * 2016-12-21 2018-06-29 日亚化学工业株式会社 发光装置的制造方法
JP2018139285A (ja) * 2016-12-21 2018-09-06 日亜化学工業株式会社 発光装置の製造方法
JP2019016629A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 Ｌｅｄモジュール
JP2019064136A (ja) * 2017-09-29 2019-04-25 日亜化学工業株式会社 透光性シートの製造方法
CN110050207A (zh) * 2016-12-09 2019-07-23 日本电气硝子株式会社 波长转换部件的制造方法、波长转换部件和发光设备
JP2020529122A (ja) * 2017-07-27 2020-10-01 ダウ シリコーンズ コーポレーション 光を制御するためのシリコーン組成物及び物品
US11538966B2 (en) 2019-04-05 2022-12-27 Nichia Corporation Method of manufacturing light emitting device
US12027501B2 (en) 2020-04-02 2024-07-02 Nichia Corporation Surface light source and method of manufacturing surface light source

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222320A (ja) * 2011-04-14 2012-11-12 Nitto Denko Corp 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置
JP2012231018A (ja) * 2011-04-26 2012-11-22 Nippon Mektron Ltd フレキシブル回路体及びその製造方法
JP2012251031A (ja) * 2011-06-01 2012-12-20 Nitto Denko Corp リフレクタ材料および発光ダイオード装置
JP2013004807A (ja) * 2011-06-17 2013-01-07 Toshiba Corp 半導体発光装置およびその製造方法
WO2013137356A1 (fr) * 2012-03-13 2013-09-19 シチズンホールディングス株式会社 Dispositif émetteur de lumière à semi-conducteur et son procédé de fabrication
WO2014072871A1 (fr) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Dispositif électroluminescent comprenant un filtre et une couche de protection
WO2014157455A1 (fr) * 2013-03-28 2014-10-02 東芝ホクト電子株式会社 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222320A (ja) * 2011-04-14 2012-11-12 Nitto Denko Corp 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置
JP2012231018A (ja) * 2011-04-26 2012-11-22 Nippon Mektron Ltd フレキシブル回路体及びその製造方法
JP2012251031A (ja) * 2011-06-01 2012-12-20 Nitto Denko Corp リフレクタ材料および発光ダイオード装置
JP2013004807A (ja) * 2011-06-17 2013-01-07 Toshiba Corp 半導体発光装置およびその製造方法
WO2013137356A1 (fr) * 2012-03-13 2013-09-19 シチズンホールディングス株式会社 Dispositif émetteur de lumière à semi-conducteur et son procédé de fabrication
WO2014072871A1 (fr) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Dispositif électroluminescent comprenant un filtre et une couche de protection
WO2014157455A1 (fr) * 2013-03-28 2014-10-02 東芝ホクト電子株式会社 Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3273491A4 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110050207A (zh) * 2016-12-09 2019-07-23 日本电气硝子株式会社 波长转换部件的制造方法、波长转换部件和发光设备
US11322659B2 (en) 2016-12-09 2022-05-03 Nippon Electric Glass Co., Ltd. Method for manufacturing wavelength conversion member, wavelength conversion member, and light-emitting device
CN108231974A (zh) * 2016-12-21 2018-06-29 日亚化学工业株式会社 发光装置的制造方法
JP2018139285A (ja) * 2016-12-21 2018-09-06 日亜化学工業株式会社 発光装置の製造方法
JP2019016629A (ja) * 2017-07-03 2019-01-31 大日本印刷株式会社 Ｌｅｄモジュール
JP2020529122A (ja) * 2017-07-27 2020-10-01 ダウ シリコーンズ コーポレーション 光を制御するためのシリコーン組成物及び物品
JP7187533B2 (ja) 2017-07-27 2022-12-12 ダウ シリコーンズ コーポレーション 光電子デバイスを製造する方法及び光電子デバイスを使用する方法
US11670741B2 (en) 2017-07-27 2023-06-06 Rohm And Haas Electronic Materials Llc Method of manufacturing an optoelectronic device
JP2019064136A (ja) * 2017-09-29 2019-04-25 日亜化学工業株式会社 透光性シートの製造方法
US11398587B2 (en) 2017-09-29 2022-07-26 Nichia Corporation Method of manufacturing light-transmissive sheet
US11538966B2 (en) 2019-04-05 2022-12-27 Nichia Corporation Method of manufacturing light emitting device
US12027501B2 (en) 2020-04-02 2024-07-02 Nichia Corporation Surface light source and method of manufacturing surface light source

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