JP2018113293A - 発光装置、生体情報測定装置および発光装置の製造方法 - Google Patents
発光装置、生体情報測定装置および発光装置の製造方法 Download PDFInfo
- Publication number
- JP2018113293A JP2018113293A JP2017001672A JP2017001672A JP2018113293A JP 2018113293 A JP2018113293 A JP 2018113293A JP 2017001672 A JP2017001672 A JP 2017001672A JP 2017001672 A JP2017001672 A JP 2017001672A JP 2018113293 A JP2018113293 A JP 2018113293A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting element
- region
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 description 25
- 238000001514 detection method Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 10
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 210000004204 blood vessel Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000017531 blood circulation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 210000003423 ankle Anatomy 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02416—Detecting, measuring or recording pulse rate or heart rate using photoplethysmograph signals, e.g. generated by infrared radiation
- A61B5/02427—Details of sensor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0233—Special features of optical sensors or probes classified in A61B5/00
- A61B2562/0238—Optical sensor arrangements for performing transmission measurements on body tissue
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Cardiology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Biophysics (AREA)
- Animal Behavior & Ethology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Physiology (AREA)
- Led Device Packages (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
Description
第1実施形態の生体情報測定装置100は、被験者の生体情報を測定する測定機器であり、被験者の身体のうち測定対象となる部位(以下「測定部位」という)Mに装着される。測定部位Mは、例えば手首や足首である。第1実施形態では、被験者の脈拍数を生体情報として例示する。
図4は、第2実施形態に係る発光装置21の平面図であり、図5は、図4におけるV−V線の断面図である。第2実施形態の発光装置21は、図5に例示される通り、配線基板213と発光素子215と隔壁217とを第1実施形態と同様に具備する。ただし、第2実施形態の配線基板213は、接合材80が浸入する孔38を有する。
以上に例示した各形態は多様に変形され得る。具体的な変形の態様を以下に例示する。以下の例示から任意に選択された2以上の態様を適宜に併合することも可能である。
Claims (8)
- 光を出射する発光素子と、
接合材により前記発光素子と接合される光反射性の反射電極を有する配線基板とを具備し、
前記反射電極は、前記発光素子からの出射光を反射する反射領域を有し、
前記反射領域の外周で囲まれた実装領域の面積は、前記配線基板に垂直な方向からみた前記発光素子の面積の4倍以上である
発光装置。 - 前記実装領域の面積は、前記配線基板に垂直な方向からみた前記発光素子の面積の9倍以上である
請求項1の発光装置。 - 前記実装領域の面積は、前記配線基板に垂直な方向からみた前記発光素子の面積の400倍以下である
請求項1または請求項2の発光装置。 - 前記配線基板は、前記反射電極において前記発光素子が接合される接合領域内に形成されて、前記接合材が浸入する孔を有する
請求項1から請求項3の何れかの発光装置。 - 前記孔は、前記反射電極の厚さ方向の全部または一部にわたり形成される
請求項4の発光装置。 - 請求項1から請求項5の何れかの発光装置を具備し、被験者の生体情報を測定する生体情報測定装置。
- 光を出射する発光素子と、配線基板における光反射性の反射電極とを接合材により接合する工程とを含み、
前記反射電極は、前記発光素子からの出射光を反射する反射領域を有し、
前記反射領域の外周で囲まれた実装領域の面積は、前記配線基板に垂直な方向からみた前記発光素子の面積の4倍以上である
発光装置の製造方法。 - 前記配線基板は、前記発光素子が接合される接合領域内に形成されて前記接合材が浸入する孔を有し、
前記発光素子と前記反射電極とを接合する工程では、前記孔に前記接合材が流入するように前記発光素子と前記反射電極とを接合する
請求項7の発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017001672A JP2018113293A (ja) | 2017-01-10 | 2017-01-10 | 発光装置、生体情報測定装置および発光装置の製造方法 |
US15/854,245 US11033193B2 (en) | 2017-01-10 | 2017-12-26 | Light emitting device, biological information measuring apparatus, and method of manufacturing light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017001672A JP2018113293A (ja) | 2017-01-10 | 2017-01-10 | 発光装置、生体情報測定装置および発光装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018113293A true JP2018113293A (ja) | 2018-07-19 |
Family
ID=62782500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017001672A Withdrawn JP2018113293A (ja) | 2017-01-10 | 2017-01-10 | 発光装置、生体情報測定装置および発光装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11033193B2 (ja) |
JP (1) | JP2018113293A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019107765A1 (de) | 2019-03-26 | 2020-10-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lebenszeichensensor und verfahren zur herstellung eines lebenszeichensensors |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428269A (ja) * | 1990-05-23 | 1992-01-30 | Fujikura Ltd | Ledベアチップの実装構造 |
JP2001044512A (ja) * | 1999-07-29 | 2001-02-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2005038892A (ja) * | 2003-07-15 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
JP2007329249A (ja) * | 2006-06-07 | 2007-12-20 | Nichia Chem Ind Ltd | 表面実装型発光装置及びその製造方法 |
JP2008004721A (ja) * | 2006-06-22 | 2008-01-10 | Nichia Chem Ind Ltd | 半導体素子搭載用の支持体 |
JP2008016593A (ja) * | 2006-07-05 | 2008-01-24 | Ngk Spark Plug Co Ltd | 発光素子搭載用配線基板 |
JP2008098290A (ja) * | 2006-10-10 | 2008-04-24 | Fujikura Ltd | 発光装置およびその製造方法 |
JP2008258296A (ja) * | 2007-04-03 | 2008-10-23 | Sony Corp | 発光装置及び光源装置 |
JP2012009794A (ja) * | 2010-06-28 | 2012-01-12 | Panasonic Corp | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
US20120205694A1 (en) * | 2011-02-11 | 2012-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a light emitting diode emitter substrate with highly reflective metal bonding |
JP2013000378A (ja) * | 2011-06-17 | 2013-01-07 | Seiko Epson Corp | 生体センサーおよび生体情報検出装置 |
JP2013254833A (ja) * | 2012-06-06 | 2013-12-19 | Mitsubishi Electric Corp | 発光装置及び発光装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184544B1 (en) * | 1998-01-29 | 2001-02-06 | Rohm Co., Ltd. | Semiconductor light emitting device with light reflective current diffusion layer |
KR100867515B1 (ko) | 2004-12-06 | 2008-11-07 | 삼성전기주식회사 | 발광소자 패키지 |
JP2008198962A (ja) | 2007-02-16 | 2008-08-28 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
WO2010137477A1 (en) * | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
FI20105335A0 (fi) * | 2010-03-31 | 2010-03-31 | Polar Electro Oy | Sydämen sykkeen havainnointi |
US9837587B2 (en) * | 2013-03-28 | 2017-12-05 | Toshiba Hokuto Electronics Corporation | Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device |
US20160242659A1 (en) | 2015-02-20 | 2016-08-25 | Seiko Epson Corporation | Pulse-wave measuring module, biological-information measuring module, and electronic device |
JP5880747B1 (ja) | 2015-02-20 | 2016-03-09 | セイコーエプソン株式会社 | 脈波測定モジュール、および電子機器 |
-
2017
- 2017-01-10 JP JP2017001672A patent/JP2018113293A/ja not_active Withdrawn
- 2017-12-26 US US15/854,245 patent/US11033193B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428269A (ja) * | 1990-05-23 | 1992-01-30 | Fujikura Ltd | Ledベアチップの実装構造 |
JP2001044512A (ja) * | 1999-07-29 | 2001-02-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2005038892A (ja) * | 2003-07-15 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
JP2007329249A (ja) * | 2006-06-07 | 2007-12-20 | Nichia Chem Ind Ltd | 表面実装型発光装置及びその製造方法 |
JP2008004721A (ja) * | 2006-06-22 | 2008-01-10 | Nichia Chem Ind Ltd | 半導体素子搭載用の支持体 |
JP2008016593A (ja) * | 2006-07-05 | 2008-01-24 | Ngk Spark Plug Co Ltd | 発光素子搭載用配線基板 |
JP2008098290A (ja) * | 2006-10-10 | 2008-04-24 | Fujikura Ltd | 発光装置およびその製造方法 |
JP2008258296A (ja) * | 2007-04-03 | 2008-10-23 | Sony Corp | 発光装置及び光源装置 |
JP2012009794A (ja) * | 2010-06-28 | 2012-01-12 | Panasonic Corp | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
US20120205694A1 (en) * | 2011-02-11 | 2012-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a light emitting diode emitter substrate with highly reflective metal bonding |
JP2013000378A (ja) * | 2011-06-17 | 2013-01-07 | Seiko Epson Corp | 生体センサーおよび生体情報検出装置 |
JP2013254833A (ja) * | 2012-06-06 | 2013-12-19 | Mitsubishi Electric Corp | 発光装置及び発光装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20180192901A1 (en) | 2018-07-12 |
US11033193B2 (en) | 2021-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI759400B (zh) | 垂直腔表面發射雷射低發散角近接感測器 | |
US9525094B2 (en) | Proximity and ranging sensor | |
WO2009139029A1 (ja) | 自発光型センサ装置及びその製造方法 | |
JP2018160677A (ja) | 半導体発光装置 | |
JP2009267066A (ja) | Ledモジュールおよびそれを用いた照明器具 | |
JP2009177098A (ja) | 紫外光発光装置 | |
JP2009099680A (ja) | 光学デバイスおよびその製造方法 | |
TWI685641B (zh) | 光學感測系統、光學感測組件及其製造方法 | |
US8932228B2 (en) | Optical device and biological information detector | |
JP4602965B2 (ja) | 光電入力装置、このような装置の製造方法、及びこのような装置の助けを借りて物体の動きを測定する方法 | |
JP2007175416A (ja) | 光学センサ及びそのセンサ部 | |
CN104545867A (zh) | 脉搏传感器以及使用了脉搏传感器的生物体信息测量装置 | |
US20230246012A1 (en) | Optical sensor package structure and electronic device | |
JP2013009710A (ja) | 生体センサーおよび生体情報検出装置 | |
JP6464736B2 (ja) | 脈波センサ及び電子機器 | |
JP2018113293A (ja) | 発光装置、生体情報測定装置および発光装置の製造方法 | |
JP4877239B2 (ja) | 発光装置の製造方法 | |
CN220154252U (zh) | 片上光学检测集成封装装置 | |
TWI629973B (zh) | 光學式生醫感測器模組及其製作方法 | |
US8915857B2 (en) | Method for manufacturing optical device, optical device, and biological information detector | |
CN113238238A (zh) | 一种激光探测模组及其制备方法 | |
JP6620176B2 (ja) | 半導体装置 | |
JP2017147400A (ja) | 受発光装置 | |
JP4301588B2 (ja) | ホトカプラ装置 | |
JPH1069674A (ja) | 光学ピックアップ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191107 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210302 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20210426 |