JP2013254833A - 発光装置及び発光装置の製造方法 - Google Patents
発光装置及び発光装置の製造方法 Download PDFInfo
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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Abstract
【解決手段】半導体発光装置10は、光を放射する発光素子13と、導体層12a,12bを有する基体11とを備える。未硬化状態から硬化状態に遷移する接合材料16によって発光素子13が接合される導体層12aにおいて、発光素子13が接合される領域12cの周辺に、発光素子13の接合時に領域12cからはみ出た未硬化状態の接合材料16が入り込む凹部15が設けられている。
【選択図】図2
Description
光を放射する発光素子と、
未硬化状態から硬化状態に遷移する接合材料によって前記発光素子が接合される導体層であって、前記発光素子が接合される領域の周辺に、前記発光素子の接合時に前記領域からはみ出た未硬化状態の前記接合材料が入り込む凹部が設けられた導体層を有する基体とを備える。
図1及び図2は、本実施の形態に係る半導体発光装置10の断面図である。図1は発光素子13の搭載前の状態、図2は発光素子13の搭載後の状態を示している。
(1)基体11に形成された導体層12aの所定の領域12cの周辺に凹部15を設ける。
(2)周辺に凹部15が設けられた領域12cに未硬化状態の接合材料16を配する。
(3)図1に示すように、未硬化状態の接合材料16が配された領域12cに発光素子13を載せる。このとき、領域12cからはみ出た未硬化状態の接合材料16が凹部15に入り込む。
(4)図2に示すように、接合材料16を硬化させて導体層12aに発光素子13を接合するとともに、発光素子13の電極14と基体11に形成された別の導体層12bとをワイヤ配線17により電気接続する。
本実施の形態について、主に実施の形態1との差異を説明する。
本実施の形態について、主に実施の形態1との差異を説明する。
Claims (4)
- 光を放射する発光素子と、
未硬化状態から硬化状態に遷移する接合材料によって前記発光素子が接合される導体層であって、前記発光素子が接合される領域の周辺に、前記発光素子の接合時に前記領域からはみ出た未硬化状態の前記接合材料が入り込む凹部が設けられた導体層を有する基体と
を備えることを特徴とする発光装置。 - 前記導体層の前記発光素子が接合される領域が複数に分割して形成され、各領域が前記凹部により隔てられたことを特徴とする請求項1の発光装置。
- 前記発光素子の前記導体層に接合される底面に、前記発光素子から放射される光を反射する金属膜が形成されたことを特徴とする請求項1又は2の発光装置。
- 基体に形成された導体層の所定の領域の周辺に凹部を設ける工程と、
周辺に前記凹部が設けられた領域に未硬化状態の接合材料を配する工程と、
未硬化状態の前記接合材料が配された領域に発光素子を載せ、前記接合材料を硬化させて前記導体層に前記発光素子を接合する工程と
を備えることを特徴とする発光装置の製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018113293A (ja) * | 2017-01-10 | 2018-07-19 | セイコーエプソン株式会社 | 発光装置、生体情報測定装置および発光装置の製造方法 |
WO2020158807A1 (ja) * | 2019-01-30 | 2020-08-06 | 京セラ株式会社 | 光学センサおよびそれを用いた光学センサ装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664482A (en) * | 1979-10-30 | 1981-06-01 | Toshiba Corp | Led device |
JP2001352100A (ja) * | 2000-06-06 | 2001-12-21 | Rohm Co Ltd | 半導体発光素子 |
JP2009177008A (ja) * | 2008-01-25 | 2009-08-06 | Toshiba Discrete Technology Kk | 発光素子及びその製造方法、発光装置 |
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- 2012-06-06 JP JP2012129193A patent/JP2013254833A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664482A (en) * | 1979-10-30 | 1981-06-01 | Toshiba Corp | Led device |
JP2001352100A (ja) * | 2000-06-06 | 2001-12-21 | Rohm Co Ltd | 半導体発光素子 |
JP2009177008A (ja) * | 2008-01-25 | 2009-08-06 | Toshiba Discrete Technology Kk | 発光素子及びその製造方法、発光装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018113293A (ja) * | 2017-01-10 | 2018-07-19 | セイコーエプソン株式会社 | 発光装置、生体情報測定装置および発光装置の製造方法 |
US11033193B2 (en) | 2017-01-10 | 2021-06-15 | Seiko Epson Corporation | Light emitting device, biological information measuring apparatus, and method of manufacturing light emitting device |
WO2020158807A1 (ja) * | 2019-01-30 | 2020-08-06 | 京セラ株式会社 | 光学センサおよびそれを用いた光学センサ装置 |
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