TW201628220A - 發光二極體模組及其製造方法 - Google Patents

發光二極體模組及其製造方法 Download PDF

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TW201628220A
TW201628220A TW104102198A TW104102198A TW201628220A TW 201628220 A TW201628220 A TW 201628220A TW 104102198 A TW104102198 A TW 104102198A TW 104102198 A TW104102198 A TW 104102198A TW 201628220 A TW201628220 A TW 201628220A
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solid crystal
electrode
emitting diode
substrate
light emitting
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TW104102198A
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TWI550918B (zh
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黃建翔
洪梓健
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榮創能源科技股份有限公司
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Abstract

一種發光二極體模組，包括基板、第一固晶部、第二固晶部和發光二極體晶片，所述基板包括電路結構，所述發光二極體晶片包括第一電極和第二電極，所述第一電極與第二電極分別通過與所述第一固晶部和第二固晶部接觸以與所述電路結構電連接。所述基板包括一阻隔部，所述阻隔部設置於所述第一固晶部和第二固晶部之間以將所述第一固晶部和第二固晶部間隔，所述阻隔部的高度大於第一固晶部和第二固晶部的厚度。

Description

發光二極體模組及其製造方法
本發明涉及一種發光二極體模組以及一種發光二極體模組的製造方法。
發光二極體作為一種新型的光源已廣泛應用於多種場合，在將發光二極體晶片與基板固晶連接的過程中通常需要利用固晶材料，固晶材料的使用量對於發光二極體的性能至關重要。當固晶材料使用量較少時，導致發光二極體晶片與基板電連線性不佳，容易導致短路；當固晶材料使用量過多時，容易導致發光二極體晶片正負極之間短路。因此，在保證發光二極體晶片與基板保持良好電連線性的基礎上，如何避免由於固晶材料使用量過多導致的發光二極體晶片的短路問題。
本發明旨在提供一種發光二極體模組及其製造方法以克服上述缺陷。
一種發光二極體模組，包括基板、第一固晶部、第二固晶部和發光二極體晶片，所述基板包括電路結構，所述發光二極體晶片包括第一電極和第二電極，所述第一電極與第二電極分別通過與所述第一固晶部和第二固晶部接觸以與所述電路結構電連接。所述基板包括一阻隔部，所述阻隔部設置於所述第一固晶部和第二固晶部之間以將所述第一固晶部和第二固晶部間隔，所述阻隔部的高度大於第一固晶部和第二固晶部的厚度。
本發明還提供一種發光二極體模組的製造方法，提供一基板；在基板上設置阻隔部；在阻隔部兩側分別設置第一固晶部和第二固晶部，所述阻隔部的高度大於第一固晶部和第二固晶部的厚度；提供一發光二極體晶片，所述發光二極體晶片設置於阻隔部之上，所述發光二極體晶片包括第一電極和第二電極，所述第一電極和第二電極分別位於阻隔部兩側，所述第一電極和所述第二電極分別通過與所述第一固晶部和第二固晶部接觸以與所述電路結構電連接。
本發明通過在基板上設置阻隔部，使所述阻隔部的高度大於第一固晶部和第二固晶部的厚度，將第一固晶部和第二固晶部分別設置在阻隔部兩側，在將所述發光二極體晶片採用覆晶連接方式固設於基板時，第一固晶部和第二固晶部的過量的固晶材料將被阻隔部阻隔，避免了由於第一固晶部和第二固晶部的固晶材料的接觸導致的發光二極體晶片的短路問題。
圖1為本發明提供的發光二極體模組的示意圖。
圖2-5為本發明提供的發光二極體模組的製造方法的示意圖。
下面將結合附圖，對本發明作進一步的詳細說明。
請參閱圖1，本發明提供一種發光二極體模組100，所述發光二極體模組100包括一基板10，第一固晶部21、第二固晶部22，發光二極體晶片30和阻隔部40。
所述基板10包括電路結構11。所述電路結構11包括第一連接部111和第二連接部112。所述第一連接部111和第二連接部112相互絕緣。所述第一連接部111和第二連接部112均設置於基板內。由所述第一連接部111和第二連接部112分別向基板10表面延伸形成第一延伸部1111和第二延伸部1121。所述第一固晶部21和第二固晶部22與所述基板10的電路結構11電連接。具體的，所述第一固晶部21和第二固晶部22分別與第一延伸部1111和第二延伸部1121接觸以與基板10的電路結構11電連接。所述基板10為導熱材料以增強本發明提供發光二極體模組100的散熱性能。
所述第一固晶部21和第二固晶部22設置於基板10上。所述第一固晶部21和第二固晶部22相互間隔設置。所述第一固晶部21和第二固晶部22均採用固晶材料。所述發光二極體晶片30採用覆晶方式設置於基板10上。所述發光二極體晶片30通過第一固晶部21和第二固晶部22設置於基板10上，並與基板10的電路結構11電連接。
所述阻隔部40設置於基板10上。所述阻隔部40設置於所述第一固晶部21和第二固晶部22之間以將第一固晶部21和第二固晶部22間隔。所述阻隔部40的材料採用碳氧化合物。具體的，所述阻隔部40的材料可採用環氧樹脂。所述阻隔部40的高度大於所述第一固晶部21和第二固晶部22的厚度。優選的，所述阻隔部40的高度大於等於5微米。
所述發光二極體晶片30設置於基板10。所述發光二極體晶片30位於所述阻隔部40之上。所述發光二極體晶片30包括晶片主體300、第一電極31和第二電極32。所述第一電極31和第二電極32相互間隔設置。所述第一電極31和所述第二電極32分別通過與所述第一固晶部21和第二固晶部22接觸以與所述電路結構11電連接。具體的，所述晶片主體300包括一N型半導體層、一有源層和一P型半導體層（圖未示）。所述晶片主體300還包括其他結構（圖未示），例如絕緣結構，該絕緣結構可包括若干通孔，該若干通孔用於填充導電材料以使得晶片主體300的N型半導體層和P型半導體層與所述第一電極31和第二電極32電連接，同時該絕緣結構避免了N型半導體層和P型半導體層之間的短路。所述導電材料可以為鎳、銀、白金、鉻、金或其他合金材料。所述第一固晶部21與所述第一電極31接觸並電連接。所述第二固晶部22與所述第二電極32接觸並電連接。所述第一電極31和第二電極32分別位於阻隔部40兩側。
本發明的實施方式提供的發光二極體模組100由於在基板10上設置阻隔部40，所述阻隔部設置於第一固晶部21和第二固晶部22之間將該二者間隔，因此，在將所述發光二極體晶片30採用覆晶連接方式固設於基板10時，第一固晶部21和第二固晶部22的過量的固晶材料將被阻隔部40阻隔，避免了由於第一固晶部21和第二固晶部22的固晶材料的接觸導致的短路問題。
請參閱圖2-5，本發明還提供一種發光二極體模組100的製造方法，包括：
提供一基板10；
在基板10上設置阻隔部40；
在阻隔部40兩側分別設置第一固晶部21和第二固晶部22，所述阻隔部40的高度大於第一固晶部21和第二固晶部22的厚度；
提供一發光二極體晶片30，所述發光二極體晶片30設置於阻隔部40之上，所述發光二極體晶片30包括第一電極31和第二電極32，所述第一電極31和第二電極32分別位於阻隔部40兩側，所述第一電極31和所述第二電極32分別通過與所述第一固晶部21和第二固晶部22接觸以與所述電路結構11電連接。
所述基板10包括電路結構11。所述電路結構11包括第一連接部111和第二連接部112。所述第一連接部111和第二連接部112相互絕緣。所述第一連接部111和第二連接部112均設置於基板內。由所述第一連接部111和第二連接部112分別向基板10表面延伸形成第一延伸部1111和第二延伸部1121。所述第一固晶部21和第二固晶部22與所述基板10的電路結構11電連接。具體的，所述第一固晶部21和第二固晶部22分別與第一延伸部1111和第二延伸部1121接觸以與基板10的電路結構11電連接。所述基板10為導熱材料以增強本發明提供發光二極體模組100的散熱性能。
所述第一固晶部21和第二固晶部22設置於基板10上。所述第一固晶部21和第二固晶部22相互間隔設置。所述第一固晶部21和第二固晶部22均採用固晶材料。所述發光二極體晶片30採用覆晶方式設置於基板10上。所述發光二極體晶片30通過第一固晶部21和第二固晶部22設置於基板10上，並與基板10的電路結構11電連接。
所述阻隔部40設置於基板10上。所述阻隔部40設置於所述第一固晶部21和第二固晶部22之間以將第一固晶部21和第二固晶部22間隔。所述阻隔部40的材料採用碳氧化合物。具體的，所述阻隔部40的材料可採用環氧樹脂。所述阻隔部40的高度大於所述第一固晶部21和第二固晶部22的厚度。優選的，所述阻隔部40的高度大於等於5微米。
所述發光二極體晶片30還包括晶片主體300。所述晶片主體300包括一N型半導體層、一有源層和一P型半導體層（圖未示）。所述晶片主體300還包括其他結構（圖未示），例如絕緣結構，該絕緣結構可包括若干通孔，該若干通孔用於填充導電材料以使得晶片主體300的N型半導體層和P型半導體層與所述第一電極31和第二電極32電連接，同時該絕緣結構避免了N型半導體層和P型半導體層之間的短路。所述導電材料可以為鎳、銀、白金、鉻、金或其他合金材料。本發明之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此，本發明之保護範圍應不限於實施例所揭示者，而應包括各種不背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。
100‧‧‧發光二極體模組
10‧‧‧基板
11‧‧‧電路結構
111‧‧‧第一連接部
1111‧‧‧第一延伸部
112‧‧‧第二連接部
1121‧‧‧第二延伸部
21‧‧‧第一固晶部
22‧‧‧第二固晶部
30‧‧‧發光二極體晶片
300‧‧‧晶片主體
31‧‧‧第一電極
32‧‧‧第二電極
40‧‧‧阻隔部
無
100‧‧‧發光二極體模組
10‧‧‧基板
11‧‧‧電路結構
111‧‧‧第一連接部
1111‧‧‧第一延伸部
112‧‧‧第二連接部
1121‧‧‧第二延伸部
21‧‧‧第一固晶部
22‧‧‧第二固晶部
30‧‧‧發光二極體晶片
300‧‧‧晶片主體
31‧‧‧第一電極
32‧‧‧第二電極
40‧‧‧阻隔部

Claims (10)

  1. 一種發光二極體模組，包括基板、第一固晶部、第二固晶部和發光二極體晶片，所述基板包括電路結構，所述發光二極體晶片包括第一電極和第二電極，所述第一電極與第二電極分別通過與所述第一固晶部和第二固晶部接觸以與所述電路結構電連接，其改良在於：所述基板包括一阻隔部，所述阻隔部設置於所述第一固晶部和第二固晶部之間以將所述第一固晶部和第二固晶部間隔，所述阻隔部的高度大於第一固晶部和第二固晶部的厚度。
  2. 如申請專利範圍第1項所述之發光二極體模組，其中，所述電路結構包括第一連接部和第二連接部，所述第一連接部和第二連接部相互絕緣，所述第一連接部和第二連接部均設置於基板內，由所述第一連接部和第二連接部分別向基板表面延伸形成第一延伸部和第二延伸部，所述第一固晶部和第二固晶部分別與第一延伸部和第二延伸部接觸以與基板的電路結構電連接。
  3. 如申請專利範圍第1項所述之發光二極體模組，其中，所述第一固晶部和第二固晶部相互間隔設置。
  4. 如申請專利範圍第1項所述之發光二極體模組，其中，所述第一電極和第二電極間隔設置。
  5. 如申請專利範圍第1項所述之發光二極體模組，其中，所述發光二極體晶片設置於阻隔部之上，所述第一電極和第二電極分別位於阻隔部兩側。
  6. 如申請專利範圍第1項所述之發光二極體模組，其中，所述阻隔部的材料採用碳氧化合物。
  7. 如申請專利範圍第1項所述之發光二極體模組，其中，所述阻隔部的材料採用環氧樹脂。
  8. 如申請專利範圍第1項所述之發光二極體模組，其中，所述阻隔部的高度大於等於5微米。
  9. 一種發光二極體模組的製造方法，包括：
    提供一基板；
    在基板上設置阻隔部；
    在阻隔部兩側分別設置第一固晶部和第二固晶部，所述阻隔部的高度大於第一固晶部和第二固晶部的厚度；
    提供一發光二極體晶片，所述發光二極體晶片設置於阻隔部之上，所述發光二極體晶片包括第一電極和第二電極，所述第一電極和第二電極分別位於阻隔部兩側，所述第一電極和所述第二電極分別通過與所述第一固晶部和第二固晶部接觸以與所述電路結構電連接。
  10. 如申請專利範圍第9項所述之發光二極體模組的製造方法，其中，所述阻隔部的高度大於等於5微米。
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