M382591 五、新型說明： 【新型所屬之技術領域】 本創作為一種關於發光二極體的技術，尤指以獨特金屬支 架構造做為基礎的發光二極體引線架結構。 【先前技術】 如第一圖所示，習知發光二極體結構係由—金屬支架i、 一碗狀基座2、一架設於金屬支架上的晶片3、若干導線4、 以及一封裝體5所構成。前述金屬支架丨包含一位於中央的晶 片承載部6、若干排列於晶片承載部6兩側的導電端子7，晶 片承載部6與兩侧的導電端子7之間相隔有一定位空間8。 前述碗狀基座2係射出成型於金屬支架丨上，以填入定位 空間8中，且局部附著於晶片承載部6、導電端子7之上，並 於晶片承載部6及導電端子7的頂面形成一碗狀容置空間（製 程上稱為線架成型）；晶片3係架設在晶片承載部6上（製程 稱為口 aa )各^線4係連接於晶片3與導電端子間7 (製 程上稱為打線）·’封裝體5係填充於碗狀基座2内而將晶片3 與導線4封裝固定（製程上稱為封裝）。 經過上述製造階段後’再將發光二極體半成品自金屬飯片 上切斷分離（製紅稱為_)，最後轉折工序將導電端子 7向下彎折形成燁接端，即完成各個獨立的發光二極體。但上 述結構使用在高亮度發光二極體時，因封裝體5為環氧樹脂， 且碗狀基座2 &覆於金屬纟架】之底面，故導熱性較差，以致 發光二極體在·使用下不易散熱，容易造紐光二極體過熱 而降低使用壽命。 因此，如第二圖所示，為加強散熱效果，第二種習知方式 係於金屬支架丨沖壓出下凹之晶片承載部6，經由線架成型、 固晶、打線、封裝、切斷等步驟，完成發光二極體半成品，最 後、弓折工序將導電端子7向下彎折成階梯狀，使其晶片承載 部6與導電端子7的底面位於同-基準面，令發光二極體能平 穩木5又於電路板上，並藉由晶片承載部底面傳導散熱，進而增 加發光二極體的使用壽命。 “但在上述製程中，於弯折時晶片承載部與導電端子的底面 方產生過大的减，除了造成架設不平整的問題外，還會影響 术:後的光,!、肖度’因此彎折工序必縣用較高精確度的加工 =又才喊導電端子的底面對齊至預期的基準面上，且彎折 則必眉保留‘電端子崎折裕度，以防止金屬彈性應力造成彎 折後偏斜喊轉確度，伽_光二極_絲良率，而 錄先-極體的體積亦因導電端子須事後彎折而無法再為縮 虚1:此’本創作人係以—種麟的金屬支架構造做為基 ==麵具_触_，林階段後 1子再崎彎折，讓發光二極體更容㈣㈣型化發 艮有政降低產業成本與製造工序。 但是本創作人在設計過程中發現，發光二極體與電路之間 ，動時產生的靜電容易導致晶片的損壞，尤其對愈精密、體積 ^的發光二極體耗損愈A，因此，薄形化之發光二極體另—項 需克服是靜電產生的問題。 為解決靜電對發光二極_影響，f知作法是將LED晶 片與種齡靜電晶片—同封裝在晶片承载部，以防止靜電對 發光二極！I的損壞，對但此種齡靜電晶片多為黑色外觀且具 有吸收5/。〜10%光照亮度的效果，使得發光二極體的整體亮度 下降’故若能解決抗靜電晶片吸收光照效果的問題，將能使發 光二極體引線架結構更加完善。 【新型内容】 本創作之主要目的在於以一種獨特的金屬支架做為基 礎，使發光二極體具有快速散熱的功能，並解決因安裝消除靜 電晶片而降低亮度的問題。 為達成上述目的，本創作發光二極體引線架結構係由一金 屬支架，以及一碗狀基座所組成，其中： 該碗狀基座頂面中央具有一凹陷的碗狀空間，並以射出成 型包射於金屬支架上；所述碗狀基座在凹陷的碗狀空間内至少 區分為一可供LED晶片設置的第一容置空間、至少—位於第 一容置空間側邊供消除靜電晶片設置的第二容置空間、以及至 少一區隔第一、第二容置空間的凸肋；前述凸肋區隔第一容置 空間與第二容置空間，可阻隔LED晶片亮度被消除靜電晶片 吸收，又達到消除靜電的成效。 、具叫，言亥金屬支架進一步包含一晶片承载部、若干排列 於晶片承載部兩侧的導電端子，晶片承載部與兩側的導電端子 之間連接有上凸部，該上凸部下緣為定位空間，前述碗狀基座 包射於金屬支架，填充於粒㈣内，且令晶片承載部與上凸 部的頂面裸露，以供後翻晶階段植人led⑼與消除靜電 晶片。 在上述結射’該“承載部與碗狀基座之第—容置空間 相對應，以供LED晶片植人；該上凸部與第二容置空間相對 應’以供猶靜電；植人；⑼承載部頂破上凸部頂面之 間相隔有前述凸肋’該凸肋可避免LED晶片亮度被消除靜電 晶片吸收，使發光二極體維持原有亮度。 再者，碗狀基座令晶片承载部與導電端子裸露的底面形成 散熱端及焊接端’以提供發光二極體完成品在後續使用時，直 接將導電端子之焊接端焊接於電路板上，而W承载部底面裸 露之散熱端能直接作為散偏途，延長發光二極體的使用声 命。 前述金屬支架的成型過程係為一薄片狀金屬飯片，利用沖 壓手段將金屬鈑片沖出多個整齊排列的金屬支架，令每一全屬 支架具有前述之晶片承載部、導電端子'以及上凸部與定位空 間，其中，前述晶片承_為—下喃狀，祕導電端子沖摩 彎折成階梯狀’使導電端子末端底面與“承_底面位於同 一基準面上後，再實行線架成型步驟。 上述先彎，折導電端子，再實施線架成型的方式，讓發光二 極體無須㈣彎折裕度，也免除發光二極體目體積太小，以致 無法沖魔導電端子的問題，讓發光二極體更容易朝向薄型化發 展，有效降低產業成本與製造工序。 此外’因晶片承载部及導電端子於金屬鈑片沖屋時，底面 保持在相_下基準面，因此省略封贿程後彎折導電端子的 序有效降低產業成本提升產品品質。同時，晶片承載部也 可依據不同規格的發光二極體調整在金屬支紅的位置，例如 可位於金屬支架的其巾—側，使賴作增加朗在不同產品上 的機會。 相較於先前技術，本創作於碗狀基座内設置凸肋，有效集 中LED晶片的統絲’解決靜電日^魏光照亮度的 問題’並在金屬鈑片沖壓時將晶片承載部及導電端子的底面保 持在相_下基料，不需觸導電端子進行彎料序，有效 降低產業成本，提升產製致率。 【實施方式】 如第三圖及第四圖所示，係本創作第一實施例之外觀立體 圖及LED晶片與着靜電晶片設置位置示賴，圖中揭示本 創作發光二極體引線架結構係由—金屬支架iq，以及—碗狀 M382591 基座20所組成，其中： 該碗狀基座20頂面中央具有的碗狀空間，並以射 出成型包射於金屬支架10上；所述碗狀基座在凹陷的碗狀空 間内至少區分為-可供LED晶片3G設置的第，容置空間21、 至少-位於第-容置空間21側邊供消除靜電晶片4〇:置曰的第 二容置空間22、以及至少-區隔第一容置空間21與第二容置 空間22的凸肋23 ;前述凸肋23區隔第一容置空間21與第二 容置空間22,避免LED晶片30亮度被消除靜電晶片4〇吸收^ 又達到消除靜電功能的成效。 請另參閱第五圖，實施時，該金屬支架1〇進一步包含一 晶片承載部η、若干排顺晶片承載部u兩側的導電端子 U，晶片承載部n與兩側的導電端子12之間連接有上凸部 13，該上凸部13下緣為定位空間14，前述碗狀基座包射 於金屬支架Η)上，填充於定位空間14…且令晶片承載部 η與上凸部13的頂面裸露’以供後續固晶階段植入LE〇晶 片30與消除靜電晶片4〇。 在上述結射，該“承餅Π細座20之第-容 置空間21相對應，以供LED W 3()植人；該上凸和與第 二容置空間22相對應，以供消除靜電晶片4〇植入；晶片承载 部η頂面與上凸部13頂面之間相隔有前述凸肋23，該凸助 23可避免LED晶片30党度被消除靜電晶片吸收，使發光二 極體維持原有亮度。 8 再者’碗狀基座20令晶片承載部u與導電端子12裸露 的底面形成散熱端m及焊接端121，以提供發光二極體完成 品在後續使用時，直接將導電端子12之焊接端121焊接於電 路板上’而晶月承載部u底面裸露之散熱端m能直接作為 散熱用途，延長發光二極體的使用壽命。 前述金屬支架10的成型過程係為一薄片狀金屬鈑片，利 用沖壓手段將金屬鈑片沖出多個整齊排列的金屬支架，令每一 金屬支架1G具有前述之晶片承載部η、導電端+ 12、以及上 凸部13與定位空間14，其中，該晶片承載部u為一下凹盤 狀’轉電端子12沖壓彎折成階梯狀，使導電端子12末端底 面與晶>!承載部11底面位於同—鮮面上後，再實行線架成 型步驟。 上述先彎折導電端子，再實施線架成型的方式，讓發光二 極無須預留彎折裕度，也免除發光二極體因體積太小，以致 “、、去冲壓導電端子的問題，讓發光二極體更容易朝向薄型化發 展，有效降低產業成本與製造工序。 此外，因晶片承載部11及導電端子12於金屬鈑片沖壓 時，底面保持在相同的下基準面，因此省略封裝製程後彎折導 5 *^子的工序，有效降低產業成本，提升產品品質。請參閱第 六圖’係本創作之第二實施例，圖中揭示晶片承載部n係位 ^金屬支架H)的射—側’使本創作能被運驗不同規格的 t光―極體上，增加本創作使用在不同產品的機會。 M382591 惟，以之實施說明及圖式所示，係舉例說明本創作之較佳 實施例者，並非以此侷限本創作。是以，舉凡與本創作之構造、 裝置、特徵等近似或相雷同者，均應屬本創作之創設目的及申 請專利範圍之内。 M382591 【圖式簡單說明】 第一圖：習知發光二極體的結構示意圖（一）。 第二圖：習知發光二極體的結構示意圖(二）。 第三圖：係本創作第一實施例之外觀立體圖。 第四圖：係本創作第一實施例之LED晶片與消除靜電晶片設 置位置示意圖。 第五圖：係本創作第一實施例之側面剖視圖。 第六圖··係本創作第二實施例之外觀立體圖。 【主要元件符號說明】 10 金屬支架 11 晶片承載部 111散熱端 12 導電端子 121 焊接端 13 上凸部 14 定位空間 20 碗狀基座 21 第一容置空間 22 第二容置空間 23 凸肋 30 LED晶片 40 消除靜電晶片M382591 V. New description: [New technical field] This creation is a technology related to light-emitting diodes, especially the light-emitting diode lead frame structure based on the unique metal support structure. [Prior Art] As shown in the first figure, the conventional light-emitting diode structure is composed of a metal holder i, a bowl-shaped base 2, a wafer 3 mounted on a metal holder, a plurality of wires 4, and a package. 5 components. The metal holder 丨 includes a centrally located wafer carrying portion 6 and a plurality of conductive terminals 7 arranged on both sides of the wafer carrying portion 6. The wafer carrying portion 6 is separated from the conductive terminals 7 on both sides by a positioning space 8. The bowl-shaped base 2 is injection molded on the metal bracket to fill the positioning space 8 and partially adhere to the wafer carrier 6 and the conductive terminal 7, and is at the top of the wafer carrier 6 and the conductive terminal 7. The surface forms a bowl-shaped accommodating space (referred to as a wire frame molding process in the process); the wafer 3 is mounted on the wafer carrying portion 6 (the process is referred to as a port aa), and each of the wires 4 is connected between the wafer 3 and the conductive terminal 7 ( The process is called wire bonding. The package 5 is filled in the bowl-shaped base 2 to seal the wafer 3 and the wire 4 (referred to as a package in the process). After the above manufacturing stage, the light-emitting diode semi-finished product is cut off and separated from the metal rice sheet (made red as _), and finally the turning process bends the conductive terminal 7 downward to form a splicing end, that is, completes each independent illuminating Diode. However, when the above structure is used in a high-brightness light-emitting diode, since the package 5 is an epoxy resin, and the bowl-shaped pedestal 2 & is covered on the bottom surface of the metal truss, the thermal conductivity is poor, so that the light-emitting diode is ·It is not easy to dissipate heat under the use, it is easy to make the neon diode overheating and reduce the service life. Therefore, as shown in the second figure, in order to enhance the heat dissipation effect, the second conventional method is to stamp the concave wafer bearing portion 6 on the metal bracket, and to form, fix, wire, package, cut, etc. via the wire frame. Step, the semi-finished product of the light-emitting diode is completed. Finally, the bending step bends the conductive terminal 7 downward into a step shape, so that the wafer bearing portion 6 and the bottom surface of the conductive terminal 7 are located on the same-reference surface, so that the light-emitting diode can be smoothed. The wood 5 is on the circuit board and conducts heat dissipation through the bottom surface of the wafer carrying portion, thereby increasing the service life of the light emitting diode. "But in the above process, when the bending is performed, the wafer bearing portion and the bottom surface of the conductive terminal are excessively reduced. In addition to the problem of unevenness of the mounting, the light after the operation is also affected! Folding process must use higher precision processing = only the bottom surface of the conductive terminal is aligned to the expected reference surface, and the bending must retain the 'electrical terminal sagging margin to prevent the metal elastic stress from bending After the skewing, the accuracy of the eccentricity, the gamma-light dipole _ silk yield, and the volume of the first-polar body is also due to the conductive terminal must be bent afterwards and can no longer be reduced 1: This 'creator' is a kind of lining The structure of the metal bracket is used as the base == mask _ touch _, after the forest stage, the 1 child re-saki bends, so that the light-emitting diode is more (four) (four) type hairpin to reduce the industrial cost and manufacturing process. But the creator During the design process, it is found that the static electricity generated between the light-emitting diode and the circuit is likely to cause damage to the wafer, especially for the more precise, volumetric light-emitting diode loss A, therefore, the thinned light-emitting two The other part of the polar body needs to be overcome to solve the problem of static electricity. To solve the problem of static electricity on the light-emitting diode, it is known that the LED chip and the age-old electrostatic chip are packaged in the wafer carrier to prevent damage to the light-emitting diode! I, but the electrostatic chip of this age is mostly The black appearance has the effect of absorbing 5/.10% of the brightness of the light, so that the overall brightness of the light-emitting diode is lowered. Therefore, if the problem of absorbing the light effect of the anti-static wafer can be solved, the structure of the light-emitting diode lead frame can be further improved. Perfect. [New Content] The main purpose of this creation is to make the light-emitting diode have the function of rapid heat dissipation based on a unique metal bracket, and solve the problem of reducing the brightness due to the installation of the static elimination chip. The light-emitting diode lead frame structure is composed of a metal bracket and a bowl-shaped base, wherein: the bowl-shaped base has a concave bowl-shaped space in the center of the top surface, and is shot by the injection molding package. a metal holder; the bowl-shaped base is at least divided into a first accommodating space for the LED chip in the recessed bowl-shaped space, at least - at the first a second accommodating space provided on the side of the space for the anti-static chip, and at least one rib separating the first and second accommodating spaces; the rib separating the first accommodating space and the second accommodating space, The brightness of the LED chip can be prevented from being absorbed by the electrostatic chip, and the effect of eliminating static electricity is achieved. The metal frame further includes a wafer carrying portion, a plurality of conductive terminals arranged on both sides of the wafer carrying portion, the wafer carrying portion and the two An upper convex portion is connected between the conductive terminals of the side, and a lower edge of the upper convex portion is a positioning space, and the bowl-shaped base is coated on the metal bracket, filled in the particle (4), and the top surface of the wafer bearing portion and the upper convex portion Exposed for the post-turning stage to implant the led (9) and the anti-static wafer. The above-mentioned ejecting 'the carrying portion corresponds to the first accommodating space of the bowl-shaped pedestal for the LED wafer to implant; the upper convex portion Corresponding to the second accommodating space, the ribs are separated from the top surface of the upper portion of the convex portion by the ribs to prevent the brightness of the LED wafer from being absorbed by the electrostatic chip. Luminous dipole Maintaining the original brightness. Furthermore, the bowl-shaped base forms a heat-dissipating end and a soldering end of the exposed surface of the wafer carrying portion and the conductive terminal to provide a finished product of the light-emitting diode, and directly solders the soldering end of the conductive terminal to the circuit board during subsequent use. The exposed heat-dissipating end of the bottom surface of the W-bearing portion can directly serve as a drifting path to prolong the use of the light-emitting diode. The forming process of the metal bracket is a sheet-shaped metal rice sheet, and the metal tantalum piece is punched out of a plurality of neatly arranged metal brackets by punching, so that each of the brackets has the aforementioned wafer carrying portion, conductive terminal 'and upper a convex portion and a positioning space, wherein the wafer carrier is a bottom-shaped shape, and the secret conductive terminal is bent and bent into a stepped shape, so that the bottom surface of the conductive terminal end and the bottom surface of the conductive terminal are located on the same reference surface, and then the wire frame is implemented. Molding step: The above-mentioned bending, folding conductive terminals, and then implementing the wire frame forming method, so that the light-emitting diode does not need (4) bending margin, and also eliminates the problem that the size of the light-emitting diode is too small, so that the conductive terminal cannot be rushed. In order to make the light-emitting diode easier to develop toward thinner, the industrial cost and manufacturing process are effectively reduced. In addition, since the wafer carrying portion and the conductive terminal are rushed to the metal slab, the bottom surface is kept at the phase-down reference plane, so the sealing is omitted. The order of bending the conductive terminals after the bribe process effectively reduces the industrial cost and improves the product quality. At the same time, the wafer carrier can also be adjusted according to different specifications of the LEDs. The position of the red, for example, can be located on the side of the metal bracket, which makes the opportunity to increase the product on different products. Compared with the prior art, the present invention provides a rib in the bowl base to effectively concentrate the LED. The wire of the wafer 'solves the problem of the brightness of the static day and the brightness of the light' and keeps the bottom surface of the wafer carrying portion and the conductive terminal in the phase-base material during stamping of the metal slab, without the need to touch the conductive terminal to bend the material sequence, effectively The industrial cost is reduced, and the production rate is improved. [Embodiment] As shown in the third and fourth figures, the appearance of the first embodiment of the present invention and the position of the LED chip and the electrostatic chip are shown. The light-emitting diode lead frame structure is composed of a metal bracket iq and a bowl-shaped M382591 base 20, wherein: the bowl-shaped base 20 has a bowl-shaped space at the center of the top surface, and is formed by injection molding. On the metal bracket 10; the bowl-shaped base is at least divided into a portion for the LED chip 3G to be disposed in the recessed bowl-shaped space, and the accommodating space 21 is at least at the side of the first accommodating space 21 for elimination. Electrostatic wafer 4 a second accommodating space 22 and at least a rib 23 separating the first accommodating space 21 and the second accommodating space 22; the rib 23 separating the first accommodating space 21 and the second accommodating space The space 22 is disposed to prevent the brightness of the LED chip 30 from being removed by the electrostatic chip 4, and the electrostatic elimination function is achieved. Please refer to the fifth figure. In implementation, the metal holder 1 further includes a wafer carrier η and a plurality of rows. An upper convex portion 13 is connected between the wafer carrying portion n and the conductive terminals 12 on both sides of the conductive terminal U on both sides of the wafer carrying portion u. The lower edge of the upper convex portion 13 is a positioning space 14, and the bowl base bag is provided. The metal substrate is mounted on the metal substrate ,), and is filled in the positioning space 14 and the top surface of the upper surface of the upper convex portion 13 is exposed for the subsequent solid crystal phase to be implanted into the LE wafer 30 and the static eliminating wafer 4 . In the above-mentioned splicing, the first accommodating space 21 of the squeegee squeegee 20 corresponds to the LED W 3 () implanting; the convex embossing corresponds to the second accommodating space 22 for eliminating static electricity. The wafer 4 is implanted; the top surface of the wafer carrier η and the top surface of the upper protrusion 13 are separated by the rib 23, and the rib 23 is 23 may help to avoid party 30 degrees LED wafer wafer is absorbed to eliminate static electricity, the light emitting diode to maintain the original brightness. 8 Further, the 'bowl-shaped pedestal 20 forms the heat-dissipating end m and the soldering end 121 of the wafer-bearing portion u and the exposed bottom surface of the conductive terminal 12 to provide the light-emitting diode finished product to directly solder the conductive terminal 12 during subsequent use. The end 121 is soldered to the circuit board' and the heat dissipation end m exposed on the bottom surface of the crystal moon bearing portion u can be directly used as a heat dissipation source to extend the service life of the light emitting diode. The forming process of the metal bracket 10 is a sheet-like metal slab, and the metal slab is punched out of a plurality of neatly arranged metal brackets by punching, so that each metal bracket 1G has the aforementioned wafer bearing portion η and the conductive end + 12, and the upper convex portion 13 and the positioning space 14, wherein the wafer carrying portion u is stamped and bent into a stepped shape, and the bottom end of the conductive terminal 12 and the crystal > After the bottom surface is on the same fresh surface, the wire frame forming step is performed. The above-mentioned bending of the conductive terminals and the implementation of the wire frame forming method eliminates the need to reserve a bending margin for the light-emitting diodes, and also eliminates the problem that the light-emitting diodes are too small, so that the punching of the conductive terminals is allowed. The light-emitting diode is more likely to be thinner and thinner, and the industrial cost and the manufacturing process are effectively reduced. Further, since the wafer carrying portion 11 and the conductive terminal 12 are pressed on the metal slab, the bottom surface is maintained at the same lower reference surface, so the packaging process is omitted. The process of bending and guiding the 5*^ sub-bends effectively reduces the industrial cost and improves the product quality. Please refer to the sixth figure, which is a second embodiment of the present invention, in which the wafer carrier n-position ^ metal bracket H is disclosed. The shot-side' enables the creation to be tested on t-lights of different specifications, increasing the chances of this creation being used in different products. M382591 However, the implementation instructions and drawings show examples of this creation. The preferred embodiment is not limited to this creation. Therefore, any similarity or similarity to the structure, device, features, etc. of the creation should be the creation purpose of the creation and the patent application. M382591 [Simple description of the diagram] The first picture: the schematic diagram of the structure of the conventional light-emitting diode (1). The second picture: the schematic diagram of the structure of the conventional light-emitting diode (2). A perspective view of the appearance of the first embodiment of the present invention. Fig. 4 is a schematic view showing the arrangement position of the LED chip and the static eliminating wafer of the first embodiment of the present invention. Fig. 5 is a side sectional view showing the first embodiment of the present creation. The appearance of the second embodiment of the present invention is a perspective view of the second embodiment. [Main component symbol description] 10 metal bracket 11 wafer carrying portion 111 heat radiating end 12 conductive terminal 121 soldering end 13 upper convex portion 14 positioning space 20 bowl base 21 first Included space 22 second accommodating space 23 rib 30 LED wafer 40 static elimination chip