TWI455376B - Method for producing electro-thermal separation type light emitting diode support structure - Google Patents
Method for producing electro-thermal separation type light emitting diode support structure Download PDFInfo
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一種發光二極體支架結構製成方法,尤其係指一種由散熱板與支架板耦合形成至少二散熱基座以及至少二組導電支架,或是由厚薄板形成至少二散熱基座以及至少二組導電支架,使散熱基座上可分別配置不同型式的發光二極體晶片之電熱分離式發光二極體支架結構製成方法。A method for fabricating a light-emitting diode support structure, in particular, a heat sink plate coupled to a support plate to form at least two heat dissipation bases and at least two sets of conductive supports, or a thick plate to form at least two heat dissipation bases and at least two groups The conductive support enables the electrothermal split type light-emitting diode support structure of the different types of light-emitting diode chips to be respectively disposed on the heat-dissipating base.
近年來,由於發光二極體(Light Emitting Diode,LED)具有耗電量低、元件壽命長、無須暖燈時間及反應速度快等優點,加上其體積小、耐震動、適合量產,因此發光二極體已普遍使用於資訊、通訊及消費性電子產品的指示燈與顯示裝置上,如行動電話及個人數位助理(Personal Digital Assistant,PDA)螢幕背光源、各種戶外顯示器、交通號誌燈及車燈等。In recent years, Light Emitting Diode (LED) has the advantages of low power consumption, long component life, no need for warm-up time and fast response speed, and its small size, vibration resistance, and mass production. Light-emitting diodes have been commonly used in indicator lights and display devices for information, communication and consumer electronics, such as mobile phones and personal digital assistant (PDA) screen backlights, various outdoor displays, traffic lights And lights, etc.
通常發光二極體晶片係透過表面黏貼技術(Surface Mount Device,SMD)或是覆晶接合技術(flip chip bonding)固接於具有凹陷部之膠座內的支架上,請參考「第1圖」所示,「第1圖」繪示為第一種習知的發光二極體支架結構的發光二極體晶片配置側視剖面示意圖。Generally, the LED chip is fixed to a bracket having a recessed portion through a surface mount device (SMD) or a flip chip bonding. Please refer to "FIG. 1". As shown, "FIG. 1" is a side cross-sectional view showing a configuration of a light-emitting diode package of the first conventional light-emitting diode support structure.
在具有凹陷部82的膠座81中,埋入有至少二支架83,各支架83部分是分別暴露在膠座81的凹陷部82內,並且各個支架83部分分別延伸出膠座81的兩側,即可形成電性連接部84,藉由電性連接部84以便於與其他電子裝置(圖式中未繪示)電性連接。In the rubber seat 81 having the recessed portion 82, at least two brackets 83 are embedded, and the portions of the brackets 83 are respectively exposed in the recessed portions 82 of the rubber seat 81, and the respective brackets 83 are respectively extended from both sides of the rubber seat 81. The electrical connection portion 84 is formed to be electrically connected to other electronic devices (not shown).
接著,再透過表面黏貼技術將發光二極體晶片85固接於暴露在膠座81的凹陷部82內支架83其中之一,以及透過打線接合技術或是覆晶接合技術使發光二極體晶片85可以透過電性導線86與另一支架83形成電性連接,最後,再於膠座81的凹陷部82上形成封裝膠體87,封裝膠體87即可以覆蓋於凹陷部82內的發光二極體晶片85及支架83。Then, the LED chip 85 is fixed to one of the brackets 83 exposed in the recessed portion 82 of the rubber seat 81 through surface bonding technology, and the LED chip is bonded by a wire bonding technique or a flip chip bonding technique. 85 can be electrically connected to the other bracket 83 through the electrical conductor 86. Finally, the encapsulant 87 is formed on the recess 82 of the rubber seat 81. The encapsulant 87 can cover the LED in the recess 82. Wafer 85 and bracket 83.
然而,上述的發光二極體支架結構對於發光二極體晶片85的散熱,則是透過固接發光二極體晶片85的支架83對發光二極體晶片85提供散熱,並且支架83又提供發光二極體晶片85的電性連接的多重功能,這會導致支架83對發光二極體晶片85的散熱效率不足,因此,這種方式無法適用於高功率的發光二極體晶片85。However, in the above-described light emitting diode support structure, the heat dissipation of the light emitting diode chip 85 is to provide heat dissipation to the light emitting diode chip 85 through the bracket 83 fixed to the light emitting diode chip 85, and the bracket 83 provides illumination. The multiple functions of the electrical connection of the diode chip 85, which results in insufficient heat dissipation efficiency of the holder 83 to the LED array 85, is therefore not applicable to the high power LED array 85.
因此,則提出一種電熱分離式發光二極體支架結構,並請參考「第2圖」所示,「第2圖」繪示為第二種習知的發光二極體支架結構的發光二極體晶片配置俯視示意圖。Therefore, an electrothermal split type light-emitting diode support structure is proposed, and please refer to FIG. 2, and FIG. 2 is a second known light-emitting diode structure of the light-emitting diode support structure. A schematic view of the bulk wafer configuration.
在具有凹陷部82的膠座81中,埋入有散熱基座88以及至少二支架83,散熱基座88以及各支架83部分是分別暴露在膠座81的凹陷部82內,並且各個支架83部分分別延伸出膠座81的兩側,即可形成電性連接部84,藉由電性連接部84以便於與其他電子裝置(圖式中未繪示)電性連接。In the rubber seat 81 having the recessed portion 82, a heat dissipation base 88 and at least two brackets 83 are embedded, and the heat dissipation base 88 and the respective bracket 83 portions are respectively exposed in the recessed portions 82 of the rubber seat 81, and the respective brackets 83 are provided. The electrical connection portion 84 is formed by the electrical connection portion 84 to be electrically connected to other electronic devices (not shown).
接著,再透過表面黏貼技術將發光二極體晶片85固接於暴露在膠座81的凹陷部82內散熱基座88,以及透過打線接合技術或是覆晶接合技術使發光二極體晶片85可以透過電性導線86分別與支架83形成電性連接,最後,再於膠座81的凹陷部82上形成封裝膠體87,封裝膠體87即可以覆蓋於凹陷部82內的發光二極體晶片85、散熱基座88及支架83。Then, the light-emitting diode chip 85 is fixed to the heat-dissipating pedestal 88 exposed in the recessed portion 82 of the rubber seat 81 through a surface-adhesive technique, and the light-emitting diode chip 85 is bonded through a wire bonding technique or a flip chip bonding technique. The electrical connection 86 can be electrically connected to the bracket 83. Finally, the encapsulant 87 is formed on the recess 82 of the plastic holder 81. The encapsulant 87 can cover the LED assembly 85 in the recess 82. The heat sink base 88 and the bracket 83.
透過上述的發光二極體支架結構在膠座81中分別埋入散熱基座88以及支架83,即可以有效的對發光二極體晶片85的散熱以及電性連接分離設計,即膠座81中所埋入的散熱基座88是用以提供發光二極體晶片85的散熱,而膠座81中所埋入的支架83是用以提供發光二極體晶片85的電性連接,即可提高發光二極體晶片85的散熱效率,以解決第一種習知的發光二極體支架結構所產生的問題。The heat dissipation pedestal 88 and the bracket 83 are respectively embedded in the rubber seat 81 through the above-mentioned light-emitting diode support structure, so that the heat dissipation and the electrical connection separation design of the light-emitting diode chip 85 can be effectively performed, that is, in the rubber seat 81. The embedded heat dissipation base 88 is for providing heat dissipation of the LED chip 85, and the bracket 83 embedded in the rubber holder 81 is for providing electrical connection of the LED chip 85, which can be improved. The heat dissipation efficiency of the light-emitting diode chip 85 solves the problems caused by the first conventional light-emitting diode support structure.
但是,由於現有第二種習知的發光二極體支架結構在膠座81中僅埋入一個散熱基座88,當在散熱基座88上設置複數發光二極體晶片85時,需要使用同樣型式(PNP type或是NPN type)的發光二極體晶片85,即需要使用正負型式即相同的發光二極體晶片85,這樣子才能將多個發光二極體晶片85設置於散熱基座88上,對於發光二極體晶片85的使用以及電性連接都會被受到限制。However, since the conventional second-sized light-emitting diode support structure has only one heat-dissipating pedestal 88 embedded in the rubber seat 81, when a plurality of light-emitting diode chips 85 are disposed on the heat-dissipating base 88, the same use is required. A light-emitting diode chip 85 of a type (PNP type or NPN type) needs to use a positive-negative type, that is, the same light-emitting diode chip 85, so that a plurality of light-emitting diode chips 85 can be disposed on the heat-dissipating base 88. In the above, the use of the LED array 85 and the electrical connection are limited.
綜上所述,可知先前技術中長期以來一直存在散熱基座上設置複數發光二極體晶片時,必須使用相同型式的發光二極體晶片,使發光二極體晶片的使用受限制的問題,因此有必要提出改進的技術手段,來解決此一問題。In summary, it has been known in the prior art that when a plurality of light-emitting diode chips are disposed on a heat-dissipating susceptor for a long time, it is necessary to use the same type of light-emitting diode wafer, so that the use of the light-emitting diode chip is limited. Therefore, it is necessary to propose improved technical means to solve this problem.
有鑒於先前技術存在散熱基座上設置複數發光二極體晶片時,必須使用相同型式的發光二極體晶片,使發光二極體晶片的使用受限制的問題,本發明遂揭露一種電熱分離式發光二極體支架結構製成方法,其中:In view of the prior art, when a plurality of light-emitting diode chips are disposed on a heat dissipation base, it is necessary to use the same type of light-emitting diode wafer to limit the use of the light-emitting diode wafer. The present invention discloses an electrothermal separation type. A method for fabricating a light-emitting diode support structure, wherein:
本發明所揭露之電熱分離式發光二極體支架結構製成方法,在第一實施態樣中包含下列步驟:The method for fabricating the electrothermal split type light-emitting diode support structure disclosed in the present invention comprises the following steps in the first embodiment:
首先,於散熱板上形成至少二散熱基座;接著,於支架板上形成至少二組導電支架;接著,散熱板與支架板相互耦合,以使至少二散熱基座設置於至少二組導電支架間,且至少二散熱基座與至少二組導電支架不相連;最後,至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外。First, at least two heat dissipation pedestals are formed on the heat dissipation plate; then, at least two sets of conductive supports are formed on the support plate; then, the heat dissipation plate and the support plate are coupled to each other, so that at least two heat dissipation pedestals are disposed on at least two sets of conductive supports And at least two heat dissipation pedestals are not connected to at least two sets of conductive supports; finally, at least two heat dissipation pedestals and at least two sets of conductive support portions are buried in the plastic seat, and at least two heat dissipation pedestals and at least two sets of conductive The bracket portion is exposed to the recess of the rubber seat, and at least the two sets of conductive bracket portions extend outside the rubber seat.
如上所述之電熱分離式發光二極體支架結構製成方法,其中於散熱板上形成至少二散熱基座的步驟是藉由沖壓製程以形成至少二散熱基座,並且於支架板上形成至少二組導電支架的步驟是藉由沖壓製程以形成至少二組導電支架。The method for fabricating an electrothermal split type light-emitting diode support structure as described above, wherein the step of forming at least two heat dissipation bases on the heat dissipation plate is to form at least two heat dissipation bases by a stamping process, and form at least two heat dissipation bases on the support plate The two sets of conductive supports are formed by a stamping process to form at least two sets of conductive supports.
如上所述之電熱分離式發光二極體支架結構製成方法,其中至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外的步驟中,至少二散熱基座部分暴露於凹陷部是用以分別固定發光二極體晶片,並且發光二極體晶片分別與部分暴露於凹陷部的任一組導電支架形成電性連接,在膠座的凹陷部更覆蓋有封裝膠體,用以包覆發光二極體晶片,藉以形成SMD發光二極體。The method for fabricating an electrothermal split type light-emitting diode support structure as described above, wherein at least two heat-dissipating bases and at least two sets of conductive bracket portions are embedded in the rubber seat, and at least two heat-dissipating bases and at least two sets of conductive brackets Part of the step of exposing to the recess of the rubber seat, and at least two sets of the conductive support portion extending outside the plastic seat, wherein at least two portions of the heat dissipation base are exposed to the recess for respectively fixing the LED, and the light emitting diode The body wafers are respectively electrically connected to any one of the conductive brackets partially exposed to the recesses, and the recessed portions of the rubber seats are further covered with an encapsulant for covering the LEDs to form the SMD light-emitting diodes.
本發明所揭露之電熱分離式發光二極體支架結構製成方法,其包含下列步驟:The method for fabricating an electrothermally separated light-emitting diode support structure disclosed in the present invention comprises the following steps:
首先,製成具有二種厚度差異的厚薄板;接著,於厚薄板厚度較大處形成至少二散熱基座;接著,於厚薄板厚度較小處形成至少二組導電支架,且至少二組導電支架與至少二散熱基座不相連;最後,至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外。First, a thick plate having two thickness differences is formed; then, at least two heat dissipation pedestals are formed at a thick thickness of the thick plate; then, at least two sets of conductive supports are formed at a small thickness of the thick plate, and at least two groups are electrically conductive The bracket is not connected to the at least two heat dissipation bases; finally, at least two heat dissipation bases and at least two sets of conductive bracket portions are buried in the rubber seat, and at least two heat dissipation bases and at least two sets of conductive bracket portions are exposed to the rubber seat The recessed portion and the at least two sets of conductive bracket portions extend outside the rubber seat.
如上所述之電熱分離式發光二極體支架結構製成方法,其中於厚薄板厚度較大處形成至少二散熱基座的步驟是藉由沖壓製程以形成至少二散熱基座,並且於厚薄板厚度較小處形成至少二組導電支架,且至少二組導電支架與至少二散熱基座不相連的步驟是藉由沖壓製程以形成至少二組導電支架。The method for fabricating an electrothermal split type light-emitting diode support structure as described above, wherein the step of forming at least two heat-dissipating pedestals at a thick portion of the thick-thickness plate is formed by a stamping process to form at least two heat-dissipating pedestals, and the thick-thin plate The step of forming at least two sets of conductive supports at a small thickness and the at least two sets of conductive supports not being connected to the at least two heat dissipation bases is performed by a stamping process to form at least two sets of conductive supports.
如上所述之電熱分離式發光二極體支架結構製成方法,其中至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外的步驟中,至少二散熱基座部分暴露於凹陷部是用以分別固定發光二極體晶片,並且發光二極體晶片分別與部分暴露於凹陷部的任一組導電支架形成電性連接,在膠座的凹陷部更覆蓋有封裝膠體,用以包覆發光二極體晶片,藉以形成SMD發光二極體。The method for fabricating an electrothermal split type light-emitting diode support structure as described above, wherein at least two heat-dissipating bases and at least two sets of conductive bracket portions are embedded in the rubber seat, and at least two heat-dissipating bases and at least two sets of conductive brackets Part of the step of exposing to the recess of the rubber seat, and at least two sets of the conductive support portion extending outside the plastic seat, wherein at least two portions of the heat dissipation base are exposed to the recess for respectively fixing the LED, and the light emitting diode The body wafers are respectively electrically connected to any one of the conductive brackets partially exposed to the recesses, and the recessed portions of the rubber seats are further covered with an encapsulant for covering the LEDs to form the SMD light-emitting diodes.
本發明所揭露之製成方法如上,與先前技術之間的差異在於本發明具體實施態樣之一是由散熱板與支架板耦合形成至少二散熱基座以及至少二組導電支架來維持電熱分離的設計;另外一種具體實施態樣則是由厚薄板形成至少二散熱基座以及至少二組導電支架來維持電熱分離的設計,並且可以同時使用不同型式的發光二極體晶片,即可以將不同型式的發光二極體晶片分別配置於散熱基座上,並分別與不同的導電支架組形成電性連接,即可以自由選用不同型式的發光二極體晶片,藉以避免發光二極體晶片使用上的限制。The manufacturing method disclosed in the present invention is as above, and the difference from the prior art is that one of the specific embodiments of the present invention is that the heat dissipation plate is coupled with the support plate to form at least two heat dissipation bases and at least two sets of conductive supports to maintain the electrothermal separation. Another specific embodiment is a design in which at least two heat dissipation pedestals and at least two sets of conductive supports are formed by thick plates to maintain electrothermal separation, and different types of light emitting diode chips can be simultaneously used, that is, different The light-emitting diode chips are respectively arranged on the heat dissipation base and electrically connected to different conductive bracket groups respectively, that is, different types of light-emitting diode chips can be freely selected, so as to avoid the use of the light-emitting diode wafer. limits.
透過上述的技術手段,本發明可以達成同時使用不同型式發光二極體晶片的技術功效。Through the above technical means, the present invention can achieve the technical effect of simultaneously using different types of light-emitting diode chips.
以下將配合圖式及實施例來詳細說明本發明之實施方式,藉此對本發明如何應用技術手段來解決技術問題並達成技術功效的實現過程能充分理解並據以實施。The embodiments of the present invention will be described in detail below with reference to the drawings and embodiments, so that the application of the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
以下將說明本發明所揭露之電熱分離式發光二極體支架結構製成方法的第一實施態樣,並請同時參考「第3圖」以及「第4圖」所示;「第3圖」繪示為本發明電熱分離式發光二極體支架結構的第一實施態樣製成方法流程圖;「第4圖」繪示為本發明電熱分離式發光二極體支架結構的散熱板與支架板耦合製成立體示意圖。The first embodiment of the method for fabricating the electrothermal split type light-emitting diode support structure disclosed in the present invention will be described below, and please refer to "Fig. 3" and "Fig. 4" at the same time; "3rd picture" The flow chart of the first embodiment of the structure of the electrothermal split type light-emitting diode support of the present invention is shown in FIG. 4; FIG. 4 is a heat dissipation plate and the support structure of the electrothermal split type light-emitting diode support structure of the present invention. The board is coupled to form a three-dimensional schematic.
首先,以沖壓(stamping)方式製成具有至少二散熱基座11的散熱板10,即於散熱板10上形成至少二散熱基座11(步驟110),並以沖壓方式製成具有至少二組導電支架21的支架板20,即於支架板20上形成至少二組導電支架21(步驟120)。First, the heat dissipation plate 10 having at least two heat dissipation pedestals 11 is formed in a stamping manner, that is, at least two heat dissipation pedestals 11 are formed on the heat dissipation plate 10 (step 110), and are formed by punching to have at least two groups. The bracket plate 20 of the conductive bracket 21, that is, at least two sets of conductive brackets 21 are formed on the bracket plate 20 (step 120).
支架板20上所形成導電支架21組數會依據散熱板10所形成散熱基座11的數量來決定,即導電支架21組數會與散熱板10所形成散熱基座11的數量相同,並且每一組導電支架21是分別具有正極導電支架22以及負極導電支架23。The number of the conductive brackets 21 formed on the bracket plate 20 is determined according to the number of the heat dissipation bases 11 formed by the heat dissipation plates 10, that is, the number of the conductive brackets 21 is the same as the number of the heat dissipation bases 11 formed by the heat dissipation plates 10, and each A set of conductive brackets 21 has a positive conductive support 22 and a negative conductive support 23, respectively.
而在「第4圖」中於散熱板10上形成三個散熱基座11,因此,於支架板20上會形成三組導電支架21,圖式中繪示的散熱基座11以及導電支架21的數量僅為舉例說明之,在此不以圖式的繪示內容侷限本發明的應用範疇。In the "Fig. 4", three heat dissipation pedestals 11 are formed on the heat dissipation plate 10. Therefore, three sets of conductive supports 21 are formed on the support plate 20, and the heat dissipation pedestal 11 and the conductive support 21 are illustrated in the drawings. The number of the embodiments is merely illustrative, and the scope of the invention is not limited by the drawings.
再將散熱板10以及支架板20分別透過設置於散熱板10以及支架板20上的定位部(12,24)相互定位結合,即散熱板10以及支架板20相互耦合,以使至少二散熱基座11設置於至少二組導電支架21間(步驟130),值得注意的是至少二散熱基座11與至少二組導電支架21彼此之間不相連,藉此可以將散熱以及電性連接分離,以形成電熱分離的形式。The heat dissipating plate 10 and the bracket plate 20 are respectively positioned and coupled to each other through the positioning portions (12, 24) disposed on the heat dissipating plate 10 and the bracket plate 20, that is, the heat dissipating plate 10 and the bracket plate 20 are coupled to each other to enable at least two heat dissipating bases. The seat 11 is disposed between at least two sets of conductive brackets 21 (step 130). It is noted that at least two heat sink bases 11 and at least two sets of conductive brackets 21 are not connected to each other, thereby separating heat dissipation and electrical connection. To form a form of electrothermal separation.
此時的散熱板10以及支架板20會形成一體成型,上述說明以及圖式僅為示意說明散熱板10以及支架板20製程方式,並不以此說明以及圖式侷限本發明的應用範疇。At this time, the heat dissipation plate 10 and the bracket plate 20 are integrally formed. The above description and drawings are merely illustrative of the manufacturing method of the heat dissipation plate 10 and the support plate 20, and the scope of application of the present invention is not limited by the description and the drawings.
在以沖壓方式分別製成具有至少二散熱基座11散熱板10以及具有至少二組導電支架21支架板20可以由導電性以及導熱性佳的金屬板或合金板所製成,例如:散熱板10以及支架板20可以為銅、鐵、鋁合金或其他導電性以及導熱性佳的材質所製成,即散熱基座11以及導電支架21會具有良好的導電性以及導熱性,在此僅為舉例說明散熱板10以及支架板20的材質,並不以此侷限本發明的應用範疇。The heat sink 10 having at least two heat sink bases 11 and the at least two sets of conductive brackets 21 are formed by stamping, and the brackets 20 can be made of a metal plate or an alloy plate having good electrical conductivity and thermal conductivity, for example, a heat sink. 10 and the bracket plate 20 can be made of copper, iron, aluminum alloy or other materials with good electrical conductivity and thermal conductivity, that is, the heat dissipation base 11 and the conductive support 21 have good electrical conductivity and thermal conductivity, and only The materials of the heat dissipation plate 10 and the support plate 20 are exemplified, and are not limited to the application scope of the present invention.
接著,請同時參考「第3圖」以及「第5圖」所示,「第5圖」繪示為本發明電熱分離式發光二極體支架結構的俯視示意圖;在透過上述製程方式分別製造出相互分離的具有至少二散熱基座11的散熱板10以及具有至少二組導電支架21的支架板20,並將散熱板10以及支架板20相互耦合之後,以埋入射出(insert molding)的方式形成膠座30,以使每一個散熱基座11以及每一組導電支架21部分埋入於膠座30內(步驟140),在實際製造過程中,僅需要透過上模具(圖中未繪示)以及下模具(圖中未繪示)將每一個散熱基座11以及每一組導電支架21嵌入於其中,在進行射出成型膠座30,即可以同時的將每一個散熱基座11以及每一組導電支架21部分埋入於膠座30內,而上模具以及下模具即可以一次性的脫模,完成埋入射出膠座30的製程,而膠座30的材質則可以是聚鄰苯二甲醯胺(polyphthalamide,PPA)或其他常用來作為發光二極體結構之膠座30的熱塑性樹脂,在此僅為舉例說明膠座30的材質,並不以此侷限本發明的應用範疇。Next, please refer to "Fig. 3" and "Fig. 5", and "Fig. 5" is a schematic plan view showing the structure of the electrothermal split type light-emitting diode support of the present invention; a heat dissipation plate 10 having at least two heat dissipation pedestals 11 and a support plate 20 having at least two sets of conductive supports 21 separated from each other, and coupling the heat dissipation plate 10 and the support plate 20 to each other in an insert molding manner The plastic holder 30 is formed such that each of the heat dissipation bases 11 and each of the sets of conductive brackets 21 are partially embedded in the rubber seat 30 (step 140). In the actual manufacturing process, only the upper mold is required to pass through (not shown) And a lower mold (not shown) embedding each of the heat dissipation bases 11 and each set of the conductive brackets 21 therein, and in the injection molding of the rubber holders 30, each of the heat dissipation bases 11 and each of the heat dissipation bases 11 can be simultaneously A set of conductive brackets 21 are partially embedded in the rubber seat 30, and the upper mold and the lower mold can be demolded at one time to complete the process of burying the plastic seat 30, and the material of the plastic seat 30 can be poly-orthobenzene. Dimethyl amide (polyphthalamide, PP) A) or other thermoplastic resin commonly used as the base 30 of the light-emitting diode structure is merely illustrative of the material of the rubber seat 30, and is not intended to limit the scope of application of the present invention.
在射出成型膠座30時,同時會在膠座30中形成凹陷部31,並且每一個散熱基座11以及每一組導電支架21部分會暴露於膠座30的凹陷部31(步驟140),以及每一組導電支架21部分會分別延伸出膠座30(步驟140)。When the molding base 30 is injection molded, the recess 31 is formed in the rubber seat 30 at the same time, and each of the heat dissipation base 11 and each of the conductive brackets 21 are exposed to the recess 31 of the rubber seat 30 (step 140). And each set of conductive brackets 21 will extend out of the glue holder 30 (step 140).
每一組導電支架21暴露於膠座30的凹陷部31的部分,以及每一組導電支架21延伸出膠座30的部分係用以提供電性連接之用,即每一組導電支架21暴露於膠座30的凹陷部31的部分是用以在膠座30的凹陷部31內與後續配置於每一個散熱基座11上的發光二極體晶片(圖中未繪示)形成電性連接,而每一組導電支架21延伸出膠座30的部分是用以在膠座30的外部形成電性連接,以便於與其他電子裝置(圖式中未繪示)電性連接,例如:主機板、電路板…等,在此僅為舉例說明之,並不以此侷限本發明的應用範疇。Each set of conductive brackets 21 is exposed to a portion of the recessed portion 31 of the rubber seat 30, and a portion of each set of conductive brackets 21 extending out of the rubber seat 30 is used for providing electrical connection, that is, each set of conductive brackets 21 is exposed. The portion of the recessed portion 31 of the rubber seat 30 is used to electrically connect the light-emitting diode chip (not shown) disposed on each of the heat dissipation bases 11 in the recess portion 31 of the plastic holder 30. The portion of each of the conductive brackets 21 extending out of the base 30 is used to form an electrical connection on the outside of the base 30 to facilitate electrical connection with other electronic devices (not shown), for example, a host The board, the circuit board, etc., are merely illustrative here, and are not intended to limit the scope of application of the present invention.
換言之,後續分別配置於膠座30之凹陷部31內每一個散熱基座11上的發光二極體晶片(圖式中未繪示)即是透過每一個散熱基座11提供發光二極體晶片的散熱之用,並且透過每一組導電支架21暴露於膠座30的凹陷部31的部分,提供發光二極體晶片的電性連接,而透過每一組導電支架21延伸出膠座30的部分,提供發光二極體晶片與其他電子裝置電性連接。In other words, the LEDs (not shown) disposed on each of the heat dissipation pedestals 11 of the recesses 31 of the plastic holders 30 are provided with light-emitting diode chips through each of the heat dissipation pedestals 11. For heat dissipation, and through each of the sets of conductive brackets 21 exposed to the recessed portion 31 of the rubber seat 30, an electrical connection of the light emitting diode chips is provided, and the plastic holders 30 extend through the sets of the conductive supports 21 In part, the LED chip is electrically connected to other electronic devices.
透過上述過程所製成的電熱分離式發光二極體支架結構即可參考「第5圖」所示。The structure of the electrothermal separation type light-emitting diode formed by the above process can be referred to as shown in "figure 5".
接著,以下將說明本發明所揭露之電熱分離式發光二極體支架結構製成方法的第二實施態樣,並請同時參考「第6圖」以及「第7A圖」所示;「第6圖」繪示為本發明電熱分離式發光二極體支架結構的第二實施態樣製成方法流程圖;「第7A圖」繪示為本發明電熱分離式發光二極體支架結構的厚薄板立體示意圖;首先,以擠壓(extrusion)方式製成具有二種厚度差異的厚薄板40(步驟210),上述方式僅為舉例說明之,並不以此侷限本發明的應用範疇。Next, a second embodiment of the method for fabricating the electrothermal split type light-emitting diode support structure disclosed in the present invention will be described below, and reference is also made to "Fig. 6" and "Fig. 7A"; Figure 2 is a flow chart showing a second embodiment of the electrothermal split type light-emitting diode support structure of the present invention; "Fig. 7A" is a thick plate of the electrothermal split type light-emitting diode support structure of the present invention. A three-dimensional schematic diagram; first, a thick sheet 40 having two thickness differences is formed in an extrusion manner (step 210). The above manner is merely illustrative and is not intended to limit the scope of application of the present invention.
接著,請同時參考「第6圖」以及「第7B圖」所示,「第7B圖」繪示為本發明電熱分離式發光二極體支架結構的厚薄板的散熱基座與導電支架製成立體示意圖;以沖壓(stamping)方式於厚薄板40厚度較大處形成至少二散熱基座41(步驟220),並以沖壓方式於厚薄板40厚度較小處形成至少二組導電支架42(步驟230)Next, please refer to "6th" and "7B", and "7B" is shown in the heat sink base and conductive bracket of the thick plate of the electrothermal split type light-emitting diode support structure of the present invention. A three-dimensional schematic view; at least two heat dissipation pedestals 41 are formed in a stamping manner at a thickness of the thick plate 40 (step 220), and at least two sets of conductive supports 42 are formed in a small thickness of the thick plate 40 by stamping (steps) 230)
厚薄板40上所形成的導電支架42組數會依據厚薄板40上所形成的散熱基座41數量來決定,即導電支架42組數會與厚薄板40所形成散熱基座41的數量相同,並且每一組導電支架42是分別具有正極導電支架43以及負極導電支架44。The number of the conductive brackets 42 formed on the thick plate 40 is determined according to the number of the heat dissipation bases 41 formed on the thick plate 40, that is, the number of the conductive supports 42 is the same as the number of the heat dissipation bases 41 formed by the thick plates 40, And each set of conductive brackets 42 has a positive conductive support 43 and a negative conductive support 44, respectively.
而在「第7A圖」以及「第7B圖」中於厚薄板40上形成三個散熱基座41,因此,於厚薄板40上會形成三組導電支架42,圖式中繪示的散熱基座41以及導電支架42的數量僅為舉例說明之,在此不以圖式的繪示內容侷限本發明的應用範疇。In FIG. 7A and FIG. 7B, three heat dissipation pedestals 41 are formed on the thick plate 40. Therefore, three sets of conductive supports 42 are formed on the thick plate 40, and the heat dissipation base is shown in the drawing. The number of seats 41 and the conductive brackets 42 are merely illustrative, and the scope of application of the present invention is not limited by the drawings.
值得注意的是,厚薄板40上所形成的至少二散熱基座41與至少二組導電支架42彼此之間不相連,藉此可以將散熱以及電性連接分離,以形成電熱分離的形式。It should be noted that at least two heat dissipation pedestals 41 and at least two sets of conductive supports 42 formed on the thick plate 40 are not connected to each other, whereby heat dissipation and electrical connection can be separated to form a form of electrothermal separation.
厚薄板40可以由導電性以及導熱性佳的金屬板或合金板所製成,例如:厚薄板40可以為銅、鐵、鋁合金或其他導電性以及導熱性佳的材質所製成,即散熱基座41以及導電支架42會具有良好的導電性以及導熱性,在此僅為舉例說明厚薄板40的材質,並不以此侷限本發明的應用範疇。The thick plate 40 can be made of a metal plate or an alloy plate with good electrical conductivity and thermal conductivity. For example, the thick plate 40 can be made of copper, iron, aluminum alloy or other materials with good electrical conductivity and thermal conductivity, that is, heat dissipation. The base 41 and the conductive support 42 have good electrical conductivity and thermal conductivity. The material of the thick plate 40 is merely exemplified herein, and is not limited to the scope of application of the present invention.
接著,請同時參考「第6圖」以及「第8圖」所示,「第8圖」繪示為本發明電熱分離式發光二極體支架結構的俯視示意圖;在透過上述製程方式分別製造出相互分離的至少二散熱基座41以及至少二組導電支架42的厚薄板40之後,以埋入射出(insert molding)的方式形成膠座50,以使每一個散熱基座41以及每一組導電支架42部分埋入於膠座50內(步驟240),在實際製造過程中,僅需要透過上模具(圖中未繪示)以及下模具(圖中未繪示)將每一個散熱基座41以及每一組導電支架42嵌入於其中,在進行射出成型膠座50,即可以同時的將每一個散熱基座41以及每一組導電支架42部分埋入於膠座50內,而上模具以及下模具即可以一次性的脫模,完成埋入射出膠座50的製程,而膠座50的材質則可以是聚鄰苯二甲醯胺(polyphthalamide,PPA)或其他常用來作為發光二極體結構之膠座50的熱塑性樹脂,在此僅為舉例說明膠座50的材質,並不以此侷限本發明的應用範疇。Next, please refer to "Fig. 6" and "Fig. 8", and "Fig. 8" is a schematic plan view showing the structure of the electrothermal split type light-emitting diode support of the present invention; After at least two heat dissipation pedestals 41 separated from each other and at least two sets of the thick plates 40 of the conductive supports 42, the glue holders 50 are formed in an insert molding manner so that each of the heat dissipation pedestals 41 and each group are electrically conductive. The bracket 42 is partially embedded in the rubber seat 50 (step 240). In the actual manufacturing process, only the upper mold (not shown) and the lower mold (not shown) are used to move each of the heat dissipation bases 41. And each set of conductive brackets 42 is embedded therein, and in the injection molding of the rubber seat 50, each of the heat dissipation bases 41 and each set of the conductive brackets 42 can be simultaneously buried in the rubber seat 50, and the upper mold and the upper mold and The lower mold can be demolded at one time to complete the process of burying the plastic seat 50, and the material of the rubber seat 50 can be polyphthalamide (PPA) or other commonly used as a light-emitting diode. Thermoplastic tree of structural rubber seat 50 , Which are only illustrative gum base material 50 is not intended to limit the scope of the present invention is applied.
在射出成型膠座50時,同時會在膠座50中形成凹陷部51,並且每一個散熱基座41以及每一組導電支架42部分會暴露於膠座50的凹陷部51(步驟240),以及每一組導電支架42部分會分別延伸出膠座50(步驟240)。When the molding compound 50 is injected, the recess 51 is formed in the rubber seat 50 at the same time, and each of the heat dissipation base 41 and each of the conductive brackets 42 are exposed to the recess 51 of the rubber seat 50 (step 240). And each set of conductive brackets 42 will extend out of the rubber seat 50 (step 240).
每一組導電支架42暴露於膠座50的凹陷部51的部分,以及每一組導電支架42延伸出膠座50的部分係用以提供電性連接之用,即每一組導電支架42暴露於膠座50的凹陷部51的部分是用以在膠座50的凹陷部51內與後續配置於每一個散熱基座41上的發光二極體晶片(圖中未繪示)形成電性連接,而每一組導電支架42延伸出膠座50的部分是用以在膠座50的外部形成電性連接,以便於與其他電子裝置(圖式中未繪示)電性連接,例如:主機板、電路板…等,在此僅為舉例說明之,並不以此侷限本發明的應用範疇。Each set of conductive brackets 42 is exposed to a portion of the recess 51 of the rubber seat 50, and a portion of each set of conductive brackets 42 extending out of the base 50 is used for providing electrical connection, that is, each set of conductive brackets 42 is exposed. The portion of the recess 51 of the rubber seat 50 is for electrically connecting with the LED (not shown) disposed on each of the heat dissipation bases 41 in the recess 51 of the rubber seat 50. And a portion of each of the conductive brackets 42 extending out of the rubber seat 50 is used to form an electrical connection outside the rubber seat 50 to facilitate electrical connection with other electronic devices (not shown), for example, a host The board, the circuit board, etc., are merely illustrative here, and are not intended to limit the scope of application of the present invention.
換言之,後續分別配置於膠座50之凹陷部51內每一個散熱基座41上的發光二極體晶片(圖式中未繪示)即是透過每一個散熱基座41提供發光二極體晶片的散熱之用,並且透過每一組導電支架42暴露於膠座50的凹陷部51的部分,提供發光二極體晶片的電性連接,而透過每一組導電支架42延伸出膠座50的部分,提供發光二極體晶片與其他電子裝置電性連接。In other words, the LEDs (not shown) disposed on each of the heat dissipation pedestals 41 of the recesses 51 of the plastic housing 50 are respectively provided by the heat dissipation pedestals 41. For heat dissipation, and through each of the sets of conductive brackets 42 exposed to the recess 51 of the rubber seat 50, an electrical connection of the light-emitting diode wafer is provided, and the rubber seat 50 is extended through each set of conductive brackets 42. In part, the LED chip is electrically connected to other electronic devices.
透過上述過程所製成的電熱分離式發光二極體支架結構即可參考「第8圖」所示。The structure of the electrothermal separation type light-emitting diode formed by the above process can be referred to as shown in "Fig. 8".
接著,請參考「第9A圖」所示,「第9A圖」繪示為本發明電熱分離式發光二極體支架結構配置發光二極體晶片的第一配置態樣俯視示意圖。Next, please refer to FIG. 9A, and FIG. 9A is a top plan view showing the first configuration of the LED array structure of the electrothermal split type light-emitting diode support structure of the present invention.
在此僅以本發明的第一實施態樣作為發光二極體晶片配置的說明,本發明的第二實施態樣配置發光二極體晶片亦如第一實施態樣的配置發光二極體晶片說明,在此僅為舉例說明之,並不以此侷限本發明的應用範疇。Herein, in the first embodiment of the present invention, as a description of the configuration of the light-emitting diode wafer, the second embodiment of the present invention is configured to configure the light-emitting diode wafer as in the first embodiment. The description is merely illustrative here and is not intended to limit the scope of application of the present invention.
藉由表面黏貼技術(Surface Mount Device,SMD)將第一發光二極體晶片61的負極固接於暴露在膠座30的凹陷部31的第一散熱基座111上,將第二發光二極體晶片62的負極固接於暴露在膠座30的凹陷部31的第二散熱基座112上,以及將第三發光二極體晶片63的負極固接於暴露在膠座30的凹陷部31的第三散熱基座113上。The anode of the first LED chip 61 is fixed to the first heat dissipation base 111 exposed to the recess 31 of the rubber seat 30 by a surface mount device (SMD), and the second light emitting diode is The negative electrode of the bulk wafer 62 is fixed to the second heat dissipation base 112 exposed to the recess 31 of the rubber seat 30, and the negative electrode of the third LED chip 63 is fixed to the recess 31 exposed to the rubber seat 30. On the third heat sink base 113.
接著,再透過打線接合技術(wire bonding)將第一發光二極體晶片61的正極與暴露於膠座30的凹陷部31的第一組導電支架211的正極導電支架221形成電性連接,以及將第一散熱基座111(即第一發光二極體晶片61的負極)與暴露於膠座30的凹陷部31的第一組導電支架211的負極導電支架231形成電性連接。Then, the positive electrode of the first light-emitting diode chip 61 is electrically connected to the positive electrode conductive support 221 of the first group of conductive brackets 211 exposed to the recess portion 31 of the rubber seat 30 by wire bonding, and The first heat dissipation base 111 (ie, the negative electrode of the first light emitting diode chip 61) is electrically connected to the negative electrode conductive support 231 of the first set of conductive brackets 211 exposed to the recess portion 31 of the rubber seat 30.
再將第二發光二極體晶片62的正極與暴露於膠座30的凹陷部31的第二組導電支架212的正極導電支架222形成電性連接,以及將第二散熱基座112(即第二發光二極體晶片62的負極)與暴露於膠座30的凹陷部31的第二組導電支架212的負極導電支架232形成電性連接。And electrically connecting the positive electrode of the second LED chip 62 to the positive conductive support 222 of the second set of conductive brackets 212 exposed to the recess 31 of the rubber seat 30, and the second heat sink base 112 (ie, The negative electrode of the second LED chip 62 is electrically connected to the negative conductive support 232 of the second set of conductive supports 212 exposed to the recess 31 of the plastic holder 30.
最後,將第三發光二極體晶片63的正極與暴露於膠座30的凹陷部31的第三組導電支架213的正極導電支架223形成電性連接,以及將第三散熱基座113(即第三發光二極體晶片63的負極)與暴露於膠座30的凹陷部31的第三組導電支架213的負極導電支架233形成電性連接。Finally, the positive electrode of the third LED chip 63 is electrically connected to the positive conductive support 223 of the third set of conductive brackets 213 exposed to the recess 31 of the rubber seat 30, and the third heat sink base 113 is The negative electrode of the third LED chip 63 is electrically connected to the negative electrode conductive support 233 of the third group of conductive supports 213 exposed to the recess 31 of the rubber holder 30.
第一組導電支架211可以分別提供第一發光二極體晶片61不同的電性極性,第二組導電支架212可以分別提供第二發光二極體晶片62不同的電性極性,以及第三組導電支架213可以分別提供第三發光二極體晶片33不同的電性極性。The first set of conductive supports 211 can respectively provide different electrical polarities of the first light emitting diode chip 61, and the second set of conductive supports 212 can respectively provide different electrical polarities of the second light emitting diode chip 62, and the third group. The conductive bracket 213 can provide different electrical polarities of the third LED chip 33, respectively.
除了以打線接合技術將第一發光二極體晶片61、第二發光二極體晶片62以及第三發光二極體晶片63分別與第一組導電支架211、第二組導電支架212以及第三組導電支架213形成電性連接之外,更可以採用覆晶接合技術(flip chip bonding)將上述發光二極體晶片分別與每一組導電支架形成電性連接,至於打線接合技術以及覆晶接合技術電性連接方式可以參考現有技術,在此不再進行贅述,並且僅為舉例說明之,並部以上述方式侷限本發明的應用範疇。The first light emitting diode chip 61, the second light emitting diode chip 62, and the third light emitting diode chip 63 are respectively connected to the first group of conductive brackets 211, the second group of conductive brackets 212, and the third, respectively, by a wire bonding technique. In addition to the electrical connection of the set of conductive supports 213, the above-mentioned light-emitting diode wafers can be electrically connected to each set of conductive supports by flip chip bonding, as for wire bonding technology and flip chip bonding. The technical connection manners can be referred to the prior art, and are not described herein again, and are merely illustrative, and the application scope of the present invention is limited in the above manner.
接著,請參考「第9B圖」所示,「第9B圖」繪示為本發明電熱分離式發光二極體支架結構配置發光二極體晶片的第二配置態樣俯視示意圖。Next, please refer to FIG. 9B, and FIG. 9B is a top plan view showing a second configuration of the LED array structure of the electrothermal split type light-emitting diode support structure of the present invention.
第二配置態樣是將第一發光二極體晶片61的正極固接於暴露在膠座30的凹陷部31的第一散熱基座111上,將第二發光二極體晶片62的正極固接於暴露在膠座30的凹陷部31的第二散熱基座112上,以及將第三發光二極體晶片63的負極固接於暴露在膠座30的凹陷部31的第三散熱基座113上。In the second configuration, the positive electrode of the first LED chip 61 is fixed on the first heat dissipation base 111 exposed to the recess 31 of the plastic holder 30, and the positive electrode of the second LED chip 62 is fixed. The second heat dissipation base 112 is exposed on the recessed portion 31 of the plastic holder 30, and the negative electrode of the third LED array 63 is fixed to the third heat dissipation base exposed to the recess 31 of the rubber holder 30. 113 on.
接著,再透過打線接合技術(wire bonding)將第一發光二極體晶片61的負極與暴露於膠座30的凹陷部31的第一組導電支架211的負極導電支架231形成電性連接,以及將第一散熱基座111(即第一發光二極體晶片61的正極)與暴露於膠座30的凹陷部31的第一組導電支架211的正極導電支架221形成電性連接。Then, the negative electrode of the first LED chip 61 is electrically connected to the negative electrode conductive bracket 231 of the first group of conductive brackets 211 exposed to the recess 31 of the rubber seat 30 by wire bonding, and The first heat dissipation pedestal 111 (ie, the positive electrode of the first light-emitting diode wafer 61) is electrically connected to the positive conductive support 221 of the first set of conductive supports 211 exposed to the recess 31 of the plastic holder 30.
再將第二發光二極體晶片62的負極與暴露於膠座30的凹陷部31的第二組導電支架212的負極導電支架232形成電性連接,以及將第二散熱基座112(即第二發光二極體晶片62的正極)與暴露於膠座30的凹陷部31的第二組導電支架212的正極導電支架222形成電性連接。And electrically connecting the negative electrode of the second LED chip 62 to the negative electrode conductive bracket 232 of the second group of conductive brackets 212 exposed to the recess 31 of the rubber seat 30, and the second heat sink base 112 (ie, The positive electrode of the second LED chip 62 is electrically connected to the positive conductive support 222 of the second set of conductive supports 212 exposed to the recess 31 of the rubber holder 30.
最後,將第三發光二極體晶片63的正極與暴露於膠座30的凹陷部31的第三組導電支架213的正極導電支架223形成電性連接,以及將第三散熱基座113(即第三發光二極體晶片63的負極)與暴露於膠座30的凹陷部31的第三組導電支架213的負極導電支架233形成電性連接。Finally, the positive electrode of the third LED chip 63 is electrically connected to the positive conductive support 223 of the third set of conductive brackets 213 exposed to the recess 31 of the rubber seat 30, and the third heat sink base 113 is The negative electrode of the third LED chip 63 is electrically connected to the negative electrode conductive support 233 of the third group of conductive supports 213 exposed to the recess 31 of the rubber holder 30.
第一組導電支架211可以分別提供第一發光二極體晶片61不同的電性極性,第二組導電支架212可以分別提供第二發光二極體晶片62不同的電性極性,以及第三組導電支架213可以分別提供第三發光二極體晶片33不同的電性極性。The first set of conductive supports 211 can respectively provide different electrical polarities of the first light emitting diode chip 61, and the second set of conductive supports 212 can respectively provide different electrical polarities of the second light emitting diode chip 62, and the third group. The conductive bracket 213 can provide different electrical polarities of the third LED chip 33, respectively.
接著,請同時「第9A圖」以及「第9B圖」所示,透過第一組導電支架211、第二組導電支架212以及第三組導電支架213,即可以分別的對第一發光二極體晶片61、第二發光二極體晶片62以及第三發光二極體晶片63進行控制,並且可以分別採用不同型式(PNP type或是NPN type)的發光二極體晶片,藉此更可以提高使用發光二極體晶片的使用效能。Then, as shown in FIG. 9A and FIG. 9B, the first group of conductive brackets 211, the second group of conductive brackets 212, and the third group of conductive brackets 213 can be respectively used to respectively pair the first light-emitting diodes. The body wafer 61, the second light emitting diode chip 62, and the third light emitting diode chip 63 are controlled, and different types (PNP type or NPN type) light emitting diode chips can be respectively used, thereby further improving The use efficiency of the light-emitting diode chip is used.
並且,在「第9A圖」以及「第9B圖」僅提供二種發光二極體的配置以及電性連接的方式,在此僅為舉例說明之,並不以此侷限本發明的應用範疇。Further, in the "9A" and "9B", only the arrangement of the two types of light-emitting diodes and the manner of electrical connection are provided, which are merely illustrative and are not intended to limit the scope of application of the present invention.
接著,請參考「第10圖」所示,「第10圖」繪示為本發明電熱分離式發光二極體支架結構封裝發光二極體晶片的俯視示意圖。Next, please refer to FIG. 10, and FIG. 10 is a top plan view showing the light-emitting diode package of the electrothermal split type light-emitting diode support structure of the present invention.
在此僅以本發明的第一實施態樣作為發光二極體晶片配置的說明,本發明的第二實施態樣配置發光二極體晶片亦如第一實施態樣的配置發光二極體晶片說明,在此僅為舉例說明之,並不以此侷限本發明的應用範疇。Herein, in the first embodiment of the present invention, as a description of the configuration of the light-emitting diode wafer, the second embodiment of the present invention is configured to configure the light-emitting diode wafer as in the first embodiment. The description is merely illustrative here and is not intended to limit the scope of application of the present invention.
再於膠座30的凹陷部31上形成封裝膠體70,封裝膠體70即可以覆蓋於凹陷部31內的發光二極體晶片60,封裝膠體70可以透過點膠(dispensing)的方式形成,在此僅為舉例說明,並不以此侷限本發明的應用範疇,且封裝膠體70中可摻有螢光粉,因此當發光二極體晶片60所發出的光線照射到螢光粉而使其激發出另一種顏色的可見光時,發光二極體晶片60所發出的光線即可與螢光粉所激發出來的光線混合而產生混光效果。The encapsulant 70 is formed on the recess 31 of the plastic holder 30. The encapsulant 70 can cover the LED assembly 60 in the recess 31. The encapsulant 70 can be formed by dispensing. For example only, it is not limited to the application scope of the present invention, and the encapsulant 70 may be doped with phosphor powder, so that the light emitted by the LED chip 60 is irradiated to the phosphor powder to excite it. In the visible light of another color, the light emitted by the LED wafer 60 can be mixed with the light excited by the phosphor to produce a light mixing effect.
綜上所述,可知本發明與先前技術之間的差異在於本發明具體實施態樣之一是由散熱板與支架板耦合形成至少二散熱基座以及至少二組導電支架來維持電熱分離的設計;另外一種具體實施態樣則是由厚薄板形成至少二散熱基座以及至少二組導電支架來維持電熱分離的設計,並且可以同時使用不同型式的發光二極體晶片,即可以將不同型式的發光二極體晶片分別配置於散熱基座上,並分別與不同的導電支架組形成電性連接,即可以自由選用不同型式的發光二極體晶片,藉以避免發光二極體晶片使用上的限制。In summary, it can be seen that the difference between the present invention and the prior art is that one of the specific embodiments of the present invention is that the heat sink is coupled with the bracket plate to form at least two heat sink bases and at least two sets of conductive brackets to maintain the electrothermal separation design. Another specific embodiment is a design in which at least two heat dissipation pedestals and at least two sets of conductive supports are formed by thick plates to maintain electrothermal separation, and different types of illuminating diode chips can be simultaneously used, that is, different types can be used. The LED chips are respectively disposed on the heat dissipation base and electrically connected to different conductive bracket groups respectively, that is, different types of LED chips can be freely selected to avoid the limitation of the use of the LED chip. .
藉由此一技術手段可以來解決先前技術所存在散熱基座上設置複數發光二極體晶片時,必須使用相同型式的發光二極體晶片,使發光二極體晶片的使用受限制的問題,進而達成同時使用不同型式發光二極體晶片的技術功效。By using such a technical means, it is possible to solve the problem that the use of the same type of light-emitting diode wafer is required when the plurality of light-emitting diode chips are disposed on the heat-dissipating susceptor of the prior art, so that the use of the light-emitting diode chip is restricted. In turn, the technical effect of simultaneously using different types of light-emitting diode chips is achieved.
雖然本發明所揭露之實施方式如上,惟所述之內容並非用以直接限定本發明之專利保護範圍。任何本發明所屬技術領域中具有通常知識者,在不脫離本發明所揭露之精神和範圍的前提下,可以在實施的形式上及細節上作些許之更動。本發明之專利保護範圍,仍須以所附之申請專利範圍所界定者為準。While the embodiments of the present invention have been described above, the above description is not intended to limit the scope of the invention. Any changes in the form and details of the embodiments may be made without departing from the spirit and scope of the invention. The scope of the invention is to be determined by the scope of the appended claims.
10...散熱板10. . . Radiating plate
11...散熱基座11. . . Cooling base
111...第一散熱基座111. . . First cooling base
112...第二散熱基座112. . . Second cooling base
113...第三散熱基座113. . . Third cooling base
12...定位部12. . . Positioning department
20...支架板20. . . Bracket plate
21...導電支架twenty one. . . Conductive bracket
211...第一組導電支架211. . . First set of conductive brackets
212...第二組導電支架212. . . Second set of conductive brackets
213...第三組導電支架213. . . The third set of conductive brackets
22...正極導電支架twenty two. . . Positive conductive bracket
221...正極導電支架221. . . Positive conductive bracket
222...正極導電支架222. . . Positive conductive bracket
223...正極導電支架223. . . Positive conductive bracket
23...負極導電支架twenty three. . . Negative electrode conductive bracket
231...負極導電支架231. . . Negative electrode conductive bracket
232...負極導電支架232. . . Negative electrode conductive bracket
233...負極導電支架233. . . Negative electrode conductive bracket
24...定位部twenty four. . . Positioning department
30...膠座30. . . Plastic seat
31...凹陷部31. . . Depression
40...厚薄板40. . . Thick plate
41...散熱基座41. . . Cooling base
42...導電支架42. . . Conductive bracket
43...正極導電支架43. . . Positive conductive bracket
44...負極導電支架44. . . Negative electrode conductive bracket
50...膠座50. . . Plastic seat
51...凹陷部51. . . Depression
60...發光二極體晶片60. . . Light-emitting diode chip
61...第一發光二極體晶片61. . . First light emitting diode chip
62...第二發光二極體晶片62. . . Second light emitting diode chip
63...第三發光二極體晶片63. . . Third light emitting diode chip
70...封裝膠體70. . . Encapsulant
81...膠座81. . . Plastic seat
82...凹陷部82. . . Depression
83...支架83. . . support
84...電性連接部84. . . Electrical connection
85...發光二極體晶片85. . . Light-emitting diode chip
86...電性導線86. . . Electrical wire
87...封裝膠體87. . . Encapsulant
88...散熱基座88. . . Cooling base
步驟110於散熱板上形成至少二散熱基座Step 110: forming at least two heat dissipation bases on the heat dissipation plate
步驟120於支架板上形成至少二組導電支架Step 120: forming at least two sets of conductive brackets on the bracket plate
步驟130散熱板與支架板相互耦合,以使至少二散熱基座設置於至少二組導電支架間,且至少二散熱基座與至少二組導電支架不相連Step 130: The heat dissipation plate and the support plate are coupled to each other, so that at least two heat dissipation bases are disposed between the at least two sets of conductive supports, and at least two heat dissipation bases are not connected to the at least two sets of conductive supports.
步驟140至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外Step 140: at least two heat dissipation bases and at least two sets of conductive bracket portions are embedded in the rubber seat, and at least two heat dissipation bases and at least two sets of conductive bracket portions are exposed to the recessed portion of the rubber seat, and at least two sets of conductive bracket portions Extended beyond the plastic seat
步驟210製成具有二種厚度差異的厚薄板Step 210 produces a thick sheet having two thickness differences
步驟220於厚薄板厚度較大處形成至少二散熱基座Step 220: forming at least two heat dissipation bases at a thickness of the thick plate
步驟230於厚薄板厚度較小處形成至少二組導電支架,且至少二組導電支架與至少二散熱基座不相連Step 230: forming at least two sets of conductive supports at a small thickness of the thick plate, and at least two sets of conductive supports are not connected to the at least two heat dissipation bases
步驟240至少二散熱基座以及至少二組導電支架部分被埋入於膠座內,且至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷部,及至少二組導電支架部分延伸於膠座外Step 240: at least two heat dissipation bases and at least two sets of conductive bracket portions are embedded in the rubber seat, and at least two heat dissipation bases and at least two sets of conductive bracket portions are exposed to the recessed portion of the rubber seat, and at least two sets of conductive bracket portions Extended beyond the plastic seat
第1圖繪示為第一種習知的發光二極體支架結構的發光二極體晶片配置側視剖面示意圖。FIG. 1 is a side cross-sectional view showing a configuration of a light-emitting diode package of the first conventional light-emitting diode support structure.
第2圖繪示為第二種習知的發光二極體支架結構的發光二極體晶片配置俯視示意圖。FIG. 2 is a top plan view showing a configuration of a light-emitting diode of the second known light-emitting diode support structure.
第3圖繪示為本發明電熱分離式發光二極體支架結構的第一實施態樣製成方法流程圖。FIG. 3 is a flow chart showing a method for fabricating the first embodiment of the electrothermal split type light-emitting diode support structure of the present invention.
第4圖繪示為本發明電熱分離式發光二極體支架結構的散熱板與支架板耦合製成立體示意圖。FIG. 4 is a perspective view showing the coupling of the heat dissipation plate and the support plate of the electrothermal separation type light-emitting diode support structure of the present invention.
第5圖繪示為本發明電熱分離式發光二極體支架結構的俯視示意圖。FIG. 5 is a schematic top view showing the structure of the electrothermal separation type light-emitting diode support of the present invention.
第6圖繪示為本發明電熱分離式發光二極體支架結構的第二實施態樣製成方法流程圖。FIG. 6 is a flow chart showing a second embodiment of the structure of the electrothermal split type light-emitting diode support structure of the present invention.
第7A圖繪示為本發明電熱分離式發光二極體支架結構的厚薄板立體示意圖。FIG. 7A is a perspective view showing a thick plate of the electrothermal separation type light-emitting diode support structure of the present invention.
第7B圖繪示為本發明電熱分離式發光二極體支架結構的厚薄板的散熱基座與導電支架製成立體示意圖。FIG. 7B is a perspective view showing the heat dissipation base and the conductive support of the thick and thin plate of the electrothermal separation type light-emitting diode support structure of the present invention.
第8圖繪示為本發明電熱分離式發光二極體支架結構的俯視示意圖。FIG. 8 is a top plan view showing the structure of the electrothermal separation type light-emitting diode support of the present invention.
第9A圖繪示為本發明電熱分離式發光二極體支架結構配置發光二極體晶片的第一配置態樣俯視示意圖。FIG. 9A is a top plan view showing the first configuration aspect of the LED assembly of the electrothermal split type light-emitting diode support structure of the present invention.
第9B圖繪示為本發明電熱分離式發光二極體支架結構配置發光二極體晶片的第二配置態樣俯視示意圖。FIG. 9B is a top plan view showing a second configuration of the LED array structure of the electrothermal split type light-emitting diode support structure of the present invention.
第10圖繪示為本發明電熱分離式發光二極體支架結構封裝發光二極體晶片的俯視示意圖。FIG. 10 is a top plan view showing the light-emitting diode package of the electrothermal separation type light-emitting diode support structure package of the present invention.
11...散熱基座11. . . Cooling base
21...導電支架twenty one. . . Conductive bracket
22...正極導電支架twenty two. . . Positive conductive bracket
23...負極導電支架twenty three. . . Negative electrode conductive bracket
30...膠座30. . . Plastic seat
31...凹陷部31. . . Depression
Claims (10)
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TW099111798A TWI455376B (en) | 2010-04-15 | 2010-04-15 | Method for producing electro-thermal separation type light emitting diode support structure |
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TWI455376B true TWI455376B (en) | 2014-10-01 |
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TWM317079U (en) * | 2007-03-02 | 2007-08-11 | I Chiun Precision Ind Co Ltd | SMD diode bonding support structure |
TW200739763A (en) * | 2006-04-11 | 2007-10-16 | Brilliant Technology Co Ltd | Packaging process of power chips |
TW200843135A (en) * | 2007-04-23 | 2008-11-01 | Augux Co Ltd | Method of packaging light emitting diode with high heat-dissipating efficiency and the structure thereof |
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TW200739763A (en) * | 2006-04-11 | 2007-10-16 | Brilliant Technology Co Ltd | Packaging process of power chips |
TWM317079U (en) * | 2007-03-02 | 2007-08-11 | I Chiun Precision Ind Co Ltd | SMD diode bonding support structure |
TW200843135A (en) * | 2007-04-23 | 2008-11-01 | Augux Co Ltd | Method of packaging light emitting diode with high heat-dissipating efficiency and the structure thereof |
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