201135987 六、發明說明： 【發明所屬之技術領域】 一種發光二極體支架結構製成方法，尤其係指一種由散熱板 與支架板辆合形成至少二散熱基座以及至少二組導電支架，或是 由厚薄板形成至少二散熱基座以及至少二組導電支架，使散熱基 '' 座上可分別配置不同型式的發光二極體晶片之電熱分離式發光二 極體支架結構製成方法。 【先前技術】 Φ 近年來，由於發光二極體（Light Emitting Diode，LED)具有 耗電量低、元件壽命長、無須暖燈時間及反應速度快等優點，加 上其體積小、耐震動、適合量產，因此發光二極體已普遍使用於 資訊、通訊及消費性電子產品的指示燈與顯示裝置上，如行動電 話及個人數位助理（Personal Digital Assistant，PDA)螢幕背光源、 各種戶外顯示器、交通號諸燈及車燈等。 通常發光二極體晶片係透過表面黏貼技術（Surface M_t • Device ’ SMD)或疋覆晶接合技術（flip池中bonding)固接於具 有凹陷部之膠座内的支架上，請參考「第i圖」所示，「第i圖」 繪示為第一種習知的發光二極體支架結構的發光二極體晶片配置 側視剖面示意圖。 在具有凹陷部82的膠座81中，埋入有至少二支架83，各支 架83部分是分別暴露在膠座81的凹陷部82内並且各個支架豹 部分分別延伸出膠座81的兩側，即可形成電性連接部84，藉由電 性連接部84以便於與其他電子裝置（圖式巾未.）電性^接。 接著，再透過表面黏貼技術將發光二極體晶片85固接於暴露 201135987 在勝座81的凹陷部82岐架83其中之―，以及透過打線接合技 術或是覆晶接合技術使發光二極體晶片85可以透過電性導線％ 與另-支架83形成電性連接，最後，再於膠座81的凹陷部82上201135987 VI. Description of the Invention: [Technical Field of the Invention] A method for fabricating a light-emitting diode support structure, in particular, a heat sink and a support plate to form at least two heat dissipation bases and at least two sets of conductive supports, or The invention relates to a method for manufacturing an electrothermally separated light-emitting diode support structure in which at least two heat-dissipating bases and at least two sets of conductive supports are formed by thick plates, so that different types of light-emitting diode chips can be respectively disposed on the heat-dissipating base. [Prior Art] Φ In recent years, Light Emitting Diode (LED) has the advantages of low power consumption, long component life, no need for warm-up time and fast response speed, plus its small size and vibration resistance. Suitable for mass production, therefore, LEDs have been widely used in the indicators and display devices of information, communication and consumer electronics, such as mobile phones and personal digital assistant (PDA) screen backlights, various outdoor displays. , traffic lights and lights. Generally, the LED chip is fixed to the bracket with the recessed rubber seat by surface mount technology (Surface M_t • Device ' SMD) or 疋 flip chip bonding technology (bonding in the flip pool), please refer to "i" As shown in the figure, the "i-th diagram" is a side cross-sectional view showing the arrangement of the light-emitting diode of the first conventional light-emitting diode support structure. In the rubber seat 81 having the recessed portion 82, at least two brackets 83 are embedded, and the portions of the brackets 83 are respectively exposed in the recessed portions 82 of the rubber seat 81 and the respective leopard portions extend out from both sides of the rubber seat 81, respectively. The electrical connection portion 84 can be formed by the electrical connection portion 84 to facilitate electrical connection with other electronic devices (not shown). Then, the light-emitting diode chip 85 is fixed to expose the recessed portion 82 of the spur 81 by the surface bonding technology, and the light-emitting diode is made by wire bonding technology or flip chip bonding technology. The wafer 85 can be electrically connected to the other holder 83 through the electrical wire %, and finally to the recess 82 of the plastic holder 81.
形成封裝雜87 ’封裝軸87即可以覆胁凹陷部82内的發光 二極體晶片85及支架83 〇 X 然而，上述的發光二極體支架結構對於發光二極體晶片85的 散熱，則是透過固接發光二極體晶4 85蚊架83對發光二極體 晶片85提供散熱，並且支架83又提供發光二極體晶片％的電性 連接的多重魏，這會導致核83對發光二極體晶片85的散熱 效率不足CJ此這種方式無法適用於高功率的發光二極體晶片 85 ° 「因此’則提出-種電齡離式發光二極體支架結構，並請參 考第2圖」所示，帛2圖」綠示為第二種習知的發光二極體支 架結構的發光二極體晶片配置俯視示意圖。 在具有凹陷部82的膠座81中，埋入有散熱基座88 以及至少 一支木83 ’散熱基座88以及各支架83部分是分別暴露在膠座81 的凹陷部82内’並且各個支架83部分分別延伸出膠座81的兩側， 即可形成電性賴部84’藉&紐連接部84以便於與其他電子裝 置（圖式中未繪示）電性連接。 接著，再透過表面黏貼技術將發光二極體晶片85固接於暴露 f膠座81的凹陷部82内散熱基座88，以及透過打線接合技術或 疋復日日接&技術使發光二極體晶片85可以透過電性導線％分別 >、支罙83形成電性連接，最後，再於膠座81的凹陷部上形成 封裝膠體87，職賴87即可以錢於凹陷部82 _發光二極 201135987 體晶片85、散熱基座88及支架83。 透過上述的發光二極體支架結構在膠座81中分別埋入散熱基 座88以及支架83，即可以有效的對發光二極體晶片％的散執以 ;及電性連接分離設計，即膠㈣中所埋入的散熱基座88是用以 提供發光二極體晶片85的散熱’鱗座81巾所埋人的支架83是 ·_用以提供發光二極體晶05的·連接，即可提高發光二極體晶 片85的散無率’贿決第—_知的料二極體支架結構所產 生的問題。 • 但疋’由於現有第二種習知的發光二極體支架結構在膠座S1 中僅埋入-個散熱基座88 ’當在散熱基座88上設置複數發光二極 體晶片85時，需要使用同樣型式（PNPtype或是NPNtype)的發 光-極體晶片85 ’即需要使用正負型式即相同的發光二極體晶片 85’這樣子才能將多個發光二極體晶片85設置於散熱基座上， 對於發光二極體晶片85的使用以及電性連接都會被受到限制。 、—综上所述，可知先前技射長期以來—直存在散熱基座上設 鲁置複數發光二極體晶片時，必須使用相同型式的發光二極體晶 片，使發光二極體晶片的使用受限制的問題，因此有必要提出改 進的技術手段，來解決此一問題。 【發明内容】 有鑒於先前技術存在散熱基座上設置複數發光二極體晶片 時’必須使用相同型式的發光二極體晶片’使發光二極體晶片的 使用受限制的問題’本發明遂揭露—種電熱分離式發光二極體支 架結構製成方法，其中： 本發明所揭露之電熱分離式發光二極體支架結構製成方法， 201135987 在第一實施態樣中包含下列步驟： 首先，於散熱板上形成至少二散熱基座；接著，於支架板上 形成至少二組導電支架；接著，散熱板與支架板相絲合，以使 至少二散熱基座設置於至少二組導電支架間，且至少二散熱基座 與至少—組導電支架不相連；最後，至少二散熱基座以及至少二 組導電支架部分被埋人轉座内，且至少二散熱基叙及至少二 組導電支架部分暴露_座_陷部，及至少二組導電支架部分 延伸於膠座外。 刀 參 如上所述之電齡離式發光二極體支架結構製成方法，其中 於散熱板上形絲少二散熱基蘭步驟是藉由賴製程以形成至 =二散熱基座，並且於支架板上形成至红組導電支細步驟是 藉由冲壓製程以形成至少二組導電支架。 如上所述之電熱分離式發光二極體支架結構製成方法，其中 至少二散熱基座以及至少二組導電絲部分被埋人於縣内/且 至少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷 部，及至少二組導電支架部分延伸於_相步驟中，至少 =座部分暴露於_部是用以分卿定發光二極體晶片，並^ 《先二極體晶片分顺部分暴露於_部的任—組導電支架 電性連接，在膠座的凹陷部更覆 夕 極趙晶片，細_SMD發，扣&覆發光二 其包==冑《驗嶋㈣帛伽難成方法， 首先，製成具有二種厚度差異的厚 度較大處形成至少：散熱基座；接著，於厚薄板厚度較 201135987 至少二組導電支架，且至少二組導電該與至少二散熱基座不相 連’最後’至少二散熱基座从至少二_電核部分被埋入於 膠座内’且至少二散熱基座以及至少二組導電支架部分暴露於膠 座的凹陷部’及至少二組導電支架部分延伸於膠座外。 " 如上所述之賴分離式奸二極體支架結難成方法，其中 於厚薄板厚度較大處軸至少二散熱基座的步驟是藉由沖廢製程 以形成至少二散熱基座，並且於板厚度較候形成至少二組 導電支架’且至少二組導電支軸至少二散絲座不相連的步驟 是藉由沖壓製程以形成至少二組導電支架。 如上所述之電熱分離式發^^極體支架結構製成方法，其中 至少二散熱基座以及至少二組導電支架部分被埋入於谬座内且 ，少二散熱基座以及至少二組導電支架部分暴露於膠座的凹陷 部’及至少二組導電支架部分延伸於膠座外的步驟中，至少二散 熱基座部分暴露於_部是用时顧定發光二極體晶片，並且 ，光二極體晶片分別與部分暴露於凹陷部的任—組導電支架形成 電性連接，在膠座_陷部更覆蓋有封歸體，用以包覆發光二 極體晶片，藉以形成SMD發光二極體。 本發明所揭露之製成方法如上，與先·術之_差異在於 本發明具體貫施紐之-是由散熱板與支雜齡形成至少二散 熱基，以及至少二組導電支架來維持電熱分離的設計，·另外一種 ，體實施態樣則是由厚薄板形成至少二散熱基座以及至少二組導 包支架來維持電熱分離的設計，並且可以同時使用不同型式的發 ，二極體晶片，即可以將不同型式的發光二極體晶片分別配置於 政熱基座上，騎顺;j；同的導電支架組形成雜連接，即可以 201135987 自由選用不同型式的發光二極體晶片，藉以避免發光二極體晶片 使用上的限制。 €過上述的技術手段’本發明可錢朗時使用不同型式發 光一極體晶片的技術功效。 【實施方式】 以下將配合®式及實施例來詳細說明本發明之實施方式，藉 此對本發明如何應職術手絲驗技躺題並達成技術功效的 實現過程能充分理解並據以實施。 ，、以下將簡本發贿揭露之電熱分離式發光二極體支架結構 製成方法的第-實施態樣，並請同時參考「第3圖」以及「第4 图」斤示$3圖」纟會示為本發明電熱分離式發光二極體支架結 ，的第-實施態樣製成方法_圖；「第4圖」緣示為本發明電熱 刀離式&光—極體支架結構的散熱板與支架板齡製成立體示意 圖。 首先，以沖壓（stamping)方式製成具有至少二散熱基座U 的散熱板10,即於散熱板1G上形成至少二散減座n (步驟 11〇) ’亚財壓方賴成具有至少二崎電支架21的支架板20， 即於支架板20上形成至少二組導電支架21 (步驟㈣）。 支木板2〇上所形成導電支架^組數會依據散熱板所形成 散熱基座n的數量綠定，㈣電支架21峽會與散熱板1〇所 形成散熱基座u的數量相同，並且每—組導電支架21是分別具 有正極導電支架22以及負極導電支架23。 而在第4圖」中於散熱板1〇上形成三個散熱基座U，因此， 於支架板2G上會喊二組導電支架2卜圖式情示的散熱基座 201135987 11以及導電支架21的數量僅為舉例說明之，在此不以圖式的繪示 内容侷限本發明的應用範疇。 再將散熱板10以及支架板20分別透過設置於散熱板1〇以及 . 支架板20上的定位部（12，24)相互定位結合，即散熱板1〇以 及支架板20相互耦合，以使至少二散熱基座11設置於至少二組 導電支架21間（步驟130)，值得注意的是至少二散熱基座u與 至少一組導電支架21彼此之間不相連，藉此可以將散熱以及電性 連接分離，以形成電熱分離的形式。 ^ 此時的散熱板丨〇以及支架板20會形成一體成型，上述說明 以及圖式僅為示意說明散熱板1〇以及支架板2〇製程方式，並不 以此說明以及圖式侷限本發明的應用範疇。 在以沖壓方式分別製成具有至少二散熱基座U散熱板1〇以 及具有至少二組導電支架21支架板20可以由導電性以及導熱性 “的金屬板或合金板所製成’例如：散熱板1〇以及支架板2〇可 以為鋼、鐵、鋁合金或其他導電性以及導熱性佳的材質所製成， φ 即散熱基座11以及導電支架21會具有良好的導電性以及導熱 性’在此僅為舉例說明散熱板10以及支架板2〇的材質，並不以 此侷限本發明的應用範疇。 接著’請同時參考「第3圖」以及「第5圖」所示，「第5圖」 繪示為本發明電熱分離式發光二極體支架結構的俯視示意圖；在 透過上述製程方式分別製造出相互分離的具有至少二散熱基座η 的散熱板10以及具有至少二組導電支架21的支架板20，並將散 熱板10以及支架板20相互輕合之後，以埋入射出（insert molding) 的方式形成膠座30’以使每一個散熱基座η以及每一組導電支架 201135987 21部分埋入於膠座30内（步驟14〇)，在實際製造過程中，僅需 要透過上模具（圖中未繪示）以及下模具（圖中未繪示）將每一 個散熱基座11以及每一組導電支架21嵌入於其中，在進行射出 - 成型膠座即可以同時的將每一個散熱基座11以及每一組導電 支架21部分埋入於膠座30内，而上模具以及下模具即可以一次 , 性的脫模，完成埋入射出膠座30的製程，而膠座3〇的材質則^ 以是聚鄰苯二甲醯胺（polyphthalamide，PPA)或其他常用來作為 發光-極構之雜3G的熱紐細旨’在此僅為糊說明膠座 _ 30的材質，並不以此侷限本發明的應用範疇。 在射出成型膠座30時，同時會在膠座3〇中形成凹陷部31， 並且每-個散熱基座U以及每-組導電支架21部分會暴露於膠 座3〇的凹陷部(步驟140)，以及每一組導電支架21部分會分 別延伸出膠座30 (步驟140)。 接，以便於與其他電子裝置（圖式中未繪示） 主機板、電路板...等’在此僅為舉例說明之， 明的應用範疇。 每一組導電支架21暴露於膠座30的凹陷部31的部分，以及 每-組導蚊架21延伸出縣3G卿分伽以提供祕連接之 • 用’即每一组導電支架21暴露於膠座3〇的凹陷部31的部分是用 以在膠座3G __ 31内與後續配置於每—個散熱基座n上的 發光二極體晶片（财未繪示）形成電性連接，而每—祖導電支 架21延伸出膠座3㈣部分是用以在膠座30的外部形成電^連 電性連接’例如： 並不以此侷限本發 換言之，後續分別配置於_ 3〇之凹陷部31内每一個散熱 基座11上的發光二極體晶片（圖式中未綠示）即是透過每一個散 201135987 熱基座11提供發光二極體晶片的散熱之用，並且透過每一組導電 支㈣暴露於膠座30的凹陷部31的部分，提體 、導^•支条21延伸出膠座3〇的部分， ； 提供發光二極體晶片與其他電子裝置電性連接。 ; 透過上述過程所製成的電熱分離式發光二極體支架結構即可 參考「第5圖」所示。 接著’以下將·本發_揭露之電熱分離式發光二極體支 ^結構製成方法的第二實施祕，並請啊參考「第6圖」以及 「第7A圖」所示；「第6圖」繪示為本發明電熱分離式發光二極 體支架結構的第二實絲樣製成方法流糊；「第7A圖」緣示為 本發明電熱分離式發光二極體支架結構的厚薄板立體示意圖；首 先’以擠壓（extrusion)方式製成具有二種厚度差異的厚薄板4〇 (步驟210) ’上述方式僅為舉例說明之，並不以此侷限本發明的 應用範_。 接著’請同時參考「第6圖」以及「第7B圖」所示，「第％ .®」綠示為本發明電熱分離式發光二極體支架結構的厚薄板的散 熱基座與導電支架製成立體示意圖；以沖屢（伽咖啤）方式於厚 ^板40厚度較大處形成至少二散熱基座41 (步驟22〇)，並以沖 壓方式於厚薄板40厚度較小處形成至少二組導電支架42 (步驟 230) ’、 々 厚薄板40上所形成的導電支架42組數會依據厚薄板4〇上所 形成的散熱基座41數量來決定，即導電支架42組數會與厚薄板 40所·^成政熱基座41的數置相同，並且每___組導電支架42是分 別具有正極導電支架43以及負極導電支架44。 12 Uj 201135987 而在「第7A圖」以及「第7B圖」巾於厚薄板*上形成三 個散熱基座41，因此，於厚薄板4〇上會形成三組導電支架42， 圖式中繪*触絲座4丨⑽料支架42 _量僅為舉例說明 ；之’在此不關式的繪示内容侷限本發明的應用範轉。 ； 、餅注意的是，賴板4G上所職的至少二散減座41與 至少-組^支架42彼此之間不相連’藉此可崎散熱以及電性 連接分離，以形成電熱分離的形式。 厚薄板40可以由導電性以及導熱性佳的金屬板或合金板所製 成，例如：厚薄板4G可以為銅、鐵、齡金或其他導電性以及導 熱性佳的材質所製成，即散熱基座^以及導電支架Μ會具有良 好的導電性以及_性，在此僅為舉例說明厚薄板4〇的材質，並 不以此侷限本發明的應用範疇。 接著’請同時參考「第6圖」以及「第8圖」所示，「第8圖」 繪不為本發明電熱分離式發光二極體支架結構的俯視示意圖，·在 透過上述製&方式分別製造出相互分離的至少二散熱基座彳】以及 • 至少二組導電支架42的厚薄板40之後，以埋入射出（insert molding)的方式形成膠座5〇，以使每一個散熱基座41以及每一 組導電支架42部分埋入於膠座5〇内（步驟24〇)，在實際製造過 程+ ’僅需要透過上模具（圖中未繪示）以及下模具⑽中未繪 示）將每一個散熱基座41以及每一組導電支架42嵌入於其中， 在進行射出成型膠座50,即可以同時的將每一個散熱基座41以及 每一組導電支架42部分埋入於膠座5〇内，而上模具以及下模具 即可以一次性的脫模，完成埋入射出膠座5〇的製程，而膠座5〇 的材貝則可以疋聚鄰笨二甲酿胺（polyphthalamide，PPA)或其他 13 201135987 苇用來作為發光二極體結構之膠座5〇的熱塑性樹脂，在此僅為舉 例說明勝座50的材質，並不以此佩本發日㈣應用範脅。 在射出成型膠座50時，同時會在膠座5〇中形成凹陷部&， 並且每-個散熱基座41以及每一組導電支架42部分會暴露於膠 座50的凹陷部51(步驟24〇)，以及每一組導電支架42部分會分 別延伸出膠座50 (步驟240)。 刀 每一組導電支架42暴露於膠座5〇的凹陷部51的部分，以及 每一組導電支架42延伸出膠座5〇的部分係用以提供電性連接之 用P母組導電支架42暴露於膠座的凹陷部^的部分是用 以在谬座50的凹陷部51内與後續配置於每一個散熱基座4ι上的 發光二極體晶片（圖中未繪示）形成電性連接，而每—㈣電支 架42延伸出膠座5〇的部分是用以在膠座％的外部形成電 接’以便於與其他電子裝置（圖式中树示）電性連接，例如· Α座Γ上續分別配置於膠座5G之凹陷部51内每一個散熱 體晶片（圖式中树示）即是透過每一個散 :土 Ml提供發光二極體晶片的散熱之用，並錢過每一轉電 ^架42暴露於膠座5〇的凹陷部51的部分，提供發光二極體曰片 接’而透縣—組導電核42延伸轉座5Q的部分， M、發光二極體晶>{與其他電子裝置電性連接。 透過上料料製賴賴分離式發光二 參考「第8圖」所示。 聪又朱、、，。構即可 接著，請參考「第9A圖」所示，「第9A圖」繪示為本發明 201135987 電熱分離式發光二極體支架結構配置發光二極體晶片的第一配置 態樣俯視示意圖。 在此僅以本發明的第一實施態樣作為發光二極體晶片配置的 說明’本發明的第二實施態樣配置發光二極體晶片亦如第一實施 態樣的配置發光二極體晶片說明，在此僅為舉例說明之，並不以 ' 此侷限本發明的應用範_。 藉由表面黏貼技術（Surface Mount Device，SMD )將第一發 光二極體晶片61的負極固接於暴露在膠座30的凹陷部31的第— ® 散熱基座111上’將第二發光二極體晶片62的負極固接於暴露在 膠座30的凹陷部31的第二散熱基座112上，以及將第三發光二 極體晶片63的負極固接於暴露在膠座3〇的凹陷部31的第三散熱 基座113上。 ^ 接著’再透過打線接合技術（wireb〇nding)將第一發光二極 體晶片61的正極與暴露於膠座3〇的凹陷部31的第一組導電支架 211的正極導電支架221形成電性連接，以及將第一散熱基座lu φ (即第一發光二極體晶片61的負極）與暴露於膠座30的凹陷部 31的第一組導電支架211的負極導電支架231形成電性連接。 再將第二發光二極體晶片62的正極與暴露於膠座3〇的凹陷 部31的第二組導電支架212的正極導電支架奶形成電性連接， 以及將第二散熱基座112 (即第二發光二極體晶片&的負極）與 暴露於膠座30的凹陷部31的第二組導電支架212的負極導蚊 架232形成電性連接。 取後’將第三發光二極體晶片63 #正極與暴露於膠座的 凹陷部的第三組導電支架213的正極導電支架奶形成電性連 15 I u 201135987 接，以及將第三散熱基座113(即第三發光二極體晶片63的負極) 與暴露於膠座30 _陷部31的第三組導電支架213的負極導電 支架233形成電性連接。 • $一組導電支架211可以分別提供第—發光二極體晶片61不 ;同的電性極性，第二組導電支架212可以分別提供第二發光二極 體晶片62 *同的電性極性’以及第三組導電支架犯可以分別提 供第二發光一極體晶片33不同的電性極性。 除了以打線接合技術將第一發光二極體晶片61、第二發光二 鲁極體晶片62以及第三發光二極體晶片63分別與第一组導^支架 叫、第二組導電支架犯錢第三組導電支架犯形成電性連接 之外’更可以採用覆晶接合技術（flip chip b〇nding)將上述發光 二極體晶片分別與每-組導電支架形成電性連接，至於打線接合 技術以及覆晶接合技術電性連接方式可以參考現有技術，在此不 再進行贅述’並且僅為舉例說明之，並部以上述方式褐限本發明 的應用範疇。 • 接著，請參考「第9B圖」所示，「第妞圖」繪示為本發明 電熱分雄式發光二極體支架結構配置發光二極體晶片的第二配置 態樣俯視示意圖。 第二配置態樣是將第-發光二極體晶片61的正極固接於暴 露在膠座30的凹陷部31的第一散熱基座lu上，將第二發光二 極體Ba片62的正極固接於暴露在踢座的凹陷部31的第二散熱 基座112上’以及將第三發光二極體晶片63的負極固接於暴露在 膠座30的凹陷部31的第三散熱基座113上。 ” 接著，再透過打線接合技術（wjreb〇ncjing)將第—發光二極 201135987 體曰曰片6i的負極與暴露於膠座％的凹陷部w的第一組導電支架 211，負極^電支架231形成電性連接，以及將第一散熱基座⑴ (即第4光—極體晶片61的正極）絲露於膠座3〇的凹陷部 :31的第組導電支架211的正極導電支架221形成電性連接。 ； 再將第一發光二極體晶片62的負極與暴露於膠座30的凹陷 π 31的第一組導電支架加的負極導電支架说形成電性連接， 以Ϊ將第二散熱基座112 (即第二發光二極體晶片62的正極）與 暴路於膠座30的凹陷部31的第二組導電支架212 ό勺正極導電支 攀架222形成電性連接。 最後將第二發光二極體晶片63的正極與暴露於膠座％的 凹郤31的第二組導電支架213的正極導電支架223形成電性連 接’以及將第三散熱基座i 13 (即第三發光二極體晶片63的負極） 絲露於膠座3G的凹陷部31的第三組導電支架213的負極導電 支架233形成電性連接。 第、·且導電支架211可以分別提供第一發光二極體晶片不 鲁同的電性極性，第二組導電支架212可以分別提供第二發光二極 體晶片62不同的電性極性，以及第三組導電支架213可以分別提 供第二發光二極體晶片33不同的電性極性。 接著，請同時「第9A圖」以及「第9B圖」所示，透過第一 組導電支架211、第二組導電支架212以及第三組導電支架213， 即可以分別的對第-發光二極體晶片6卜第二發光二極體晶片62 以及第二發光二極體晶片63進行控制，並且可以分別採用不同型 式（PNP type或是npn type)的發光二極體晶片，藉此更可以提 高使用發光二極體晶片的使用效能。 17 201135987 並且，在「第9A圖」以及「第9B圖」僅提供 體的配置以及電性連接的方式，在此僅為舉例說明之， 侷限本發明的應用範疇。 个乂此 接1，請參考「第1〇圖」所示’「第1G圖」綠示為本發明電 …分離式U二極體支架結構封裝發光二極體晶片的俯視示音 圖。 ^、思 在此僅以本發明的第一實施態樣作為發光二極體晶片配置的 說明’本發明的第二實施態樣配置發光二極體晶片亦如第_施 悲樣的配置發光二極體晶片說明，在此僅為舉例朗之，並不以 此侷限本發明的應用範蜂。 、 再於膠座30的凹陷部31上形朗裝膠體7〇，封裝膠體兀 即可以覆蓋於凹陷部内的發光二極體晶片6〇，封鱗體兀可 以透過點膠（dispensing)的方式職，在此僅為舉槪明並不 以此褐限本發明的應用範嘴，且封裝膠體％中可摻有勞光粉，因 此當發光二極體晶片60所發出的光線照射到螢光粉而使其激發出 φ另-種顏色的可見光時，發光二極體晶片6〇所發出的光線即可與 螢光粉所激發出來的光線混合而產生混光效果。 綜上所述，可知本發明與先前技術之間的差異在於本發明具 體實施態樣之一是由散熱板與支架板耦合形成至少二散熱基座以 及至少一組導電支架來維持電熱分離的設計；另外一種具體實施 態樣則是由厚薄板形成至少二散熱基座以及至少二組導電支架來 維持電熱分離的設計，並且可以同時使用不同型式的發光二極體 晶片，即可以將不同型式的發光二極體晶片分別配置於散熱基座 上，並分別與不同的導電支架組形成電性連接，即可以自由選用 m 18 201135987 不同型式的發光一極體晶片，藉以避免發光二極體晶片使用上的 限制。 藉由此一技術手段可以來解決先前技術所存在散熱基座上設 置複數發光二極體晶片時，必須使用相同型式的發光二極體晶 片，使發光一極體晶片的使用受限制的問題，進而達成同時使用 不同型式發光二極體晶片的技術功效。 雖然本發明所揭露之實施方式如上，惟所述之内容並非用以 直接限定本發明之專利保護範圍。任何本發明所屬技術領域中具 有通常知識者，在不脫離本發明所揭露之精神和範圍的前提下， 可以在實施的形式上及細節上作些許之更動。本發明之專利保護 範圍，仍須以所附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖繪示為第-種習知的發光二極體支架結構的發光二極 體晶片配置侧視剖面示意圖。 第2圖繪示為第二種習知的發光二極體支架結構的發光二極 體晶片配置俯視示意圖。 第3圖繪示為本發明電熱分離式發光二極體支架結構的第一 實施態樣製成方法流程圖。 第4圖繪示為本發明電熱分離式發光二極體支架結構的散熱 板與支架板耦合製成立體示意圖。 第5圖繪示為本發明電齡離式發光二減該結構的俯視 示意圖。 第6圖繪示為本發明電熱分離式發光二極體支架結構的第二 實施態樣製成方法流程圖。 第7A圖繪示為本發明電熱分離式發光二極體支架結構的厚 201135987 薄板立體示意圖。 第7B圖繪示為本發明電熱分離式發光二極體支架結構的厚 薄板的散熱基座與導電支架製成立體示意圖。 第8圖繪示為本發明電熱分離式魏二極體支架結構的俯視 示意圖。 第9A圖繪示為本發明電熱分離式發光二極體支架結構配置 發光二極體晶片的第一配置態樣俯視示意圖。Forming the package impurity 87' package axis 87 can cover the light-emitting diode chip 85 and the bracket 83 〇X in the recess 82. However, the above-mentioned light-emitting diode support structure for heat dissipation of the light-emitting diode chip 85 is The heat-dissipating diodes 83 are provided with heat dissipation through the fixed light-emitting diode crystals 84, and the brackets 83 provide multiple electrical connections of the light-emitting diode wafers, which causes the cores 83 to emit light dipoles. The heat dissipation efficiency of the bulk wafer 85 is not sufficient. This method cannot be applied to a high-power light-emitting diode wafer of 85 °. Therefore, a structure of an electric-age-emitting diode package is proposed, and please refer to FIG. As shown, the 帛2 diagram "green" is a top view of a light-emitting diode chip configuration of a second conventional light-emitting diode support structure. In the rubber seat 81 having the recessed portion 82, a heat dissipation base 88 and at least one wood 83' heat dissipation base 88 are embedded, and portions of the respective brackets 83 are respectively exposed in the recessed portions 82 of the rubber seat 81' and each of the brackets The 83 portions are respectively extended from the two sides of the rubber seat 81, so that the electrical portion 84' can be formed to be electrically connected to other electronic devices (not shown). Then, the light-emitting diode chip 85 is fixed to the heat-dissipating pedestal 88 in the recessed portion 82 of the exposed plastic seat 81 through the surface-adhesive technique, and the light-emitting diode is transmitted through the wire bonding technology or the 接 日 日 & The body wafer 85 can be electrically connected through the electrical wires %>, the support 83, and finally, the encapsulant 87 is formed on the depressed portion of the rubber seat 81, and the service 87 can be used for the recess 82. Pole 201135987 body wafer 85, heat sink base 88 and bracket 83. The heat-dissipating pedestal 88 and the bracket 83 are respectively embedded in the rubber seat 81 through the above-mentioned light-emitting diode support structure, which can effectively dissipate the light-emitting diode wafer %; and the electrical connection separation design, that is, the glue (4) The heat sink base 88 embedded in the heat sink base 88 is used to provide heat dissipation of the light emitting diode chip 85. The bracket 83 embedded in the scale 81 is used to provide the connection of the light emitting diode 05, that is, It is possible to improve the problem of the dispersion of the LED chip 85, which is caused by the structure of the diode assembly. • However, since the second known conventional light-emitting diode support structure embeds only one heat dissipation base 88 in the rubber seat S1, when a plurality of light-emitting diode chips 85 are disposed on the heat dissipation base 88, It is necessary to use the same type (PNPtype or NPNtype) of the light-emitting body wafer 85', that is, to use the positive and negative type, that is, the same light-emitting diode wafer 85', so that the plurality of light-emitting diode chips 85 can be disposed on the heat-dissipating base. Above, the use of the LED array 85 and the electrical connection are limited. In summary, it can be seen that the prior art has long been used to provide a light-emitting diode chip on the heat sink base, and the same type of light-emitting diode chip must be used to make the use of the light-emitting diode chip. Restricted issues, so it is necessary to propose improved technical means to solve this problem. SUMMARY OF THE INVENTION In view of the prior art, there is a problem that the use of a light-emitting diode wafer of the same type must be limited when a plurality of light-emitting diode chips are disposed on a heat-dissipating susceptor. A method for fabricating an electrothermal split type light-emitting diode support structure, wherein: the method for fabricating an electrothermal split type light-emitting diode support structure disclosed in the present invention, 201135987 includes the following steps in the first embodiment: First, Forming at least two heat dissipation bases on the heat dissipation plate; then, forming at least two sets of conductive supports on the support plate; then, the heat dissipation plate is meshed with the support plate so that at least two heat dissipation bases are disposed between the at least two sets of conductive supports, And at least two heat dissipation pedestals are not connected to at least the group of conductive supports; finally, at least two heat dissipation pedestals and at least two sets of conductive support portions are buried in the transposing seat, and at least two heat dissipation bases are exposed to at least two sets of conductive support portions. The _ seat _ trap, and at least two sets of conductive bracket portions extend outside the rubber seat. The method for manufacturing an electrical age-differentiated light-emitting diode support structure as described above, wherein the heat-dissipating plate has a second heat-dissipating base step, which is formed by a Lai process to form a heat dissipation base, and is mounted on the support The step of forming the plate to the red group conductive branch is to form at least two sets of conductive supports by a stamping process. The electrothermal split type light-emitting diode support structure manufacturing method as described above, wherein at least two heat-dissipating bases and at least two sets of conductive wire portions are buried in the county/and at least two heat-dissipating bases and at least two sets of conductive bracket portions The recessed portion exposed to the rubber seat, and at least two sets of conductive support portions extend in the _ phase step, at least the seat portion is exposed to the _ portion for dividing the light emitting diode chip, and the first diode chip The sub-sliding part is exposed to the _ section of the set of conductive brackets electrically connected, in the recessed part of the plastic seat more 夕 赵 晶片 晶片, thin _SMD hair, buckle & illuminating two packets == 胄 "嶋 嶋 (4)帛 难 难 难 难 难 难 难 难 难 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The heat sink base is not connected to the 'final' at least two heat sink bases are embedded in the rubber seat from at least two of the core portions, and at least two heat sink bases and at least two sets of conductive bracket portions are exposed to the recesses of the rubber seat' and At least two sets of conductive The bracket portion extends beyond the rubber seat. " As described above, the method for separating the detachable ridges is difficult, wherein the step of at least two heat-dissipating pedestals at the thickness of the thick plate is to form at least two heat-dissipating pedestals by the retort process, and The step of forming at least two sets of conductive supports at a thickness of the plate and the at least two sets of conductive fulcrums are not connected to each other is formed by a stamping process to form at least two sets of conductive supports. The method of manufacturing the electrothermal separation type body holder structure as described above, wherein at least two heat dissipation pedestals and at least two sets of conductive support portions are buried in the sley and the second heat dissipation pedestal and at least two groups of conductive The step of the bracket is exposed to the recessed portion of the rubber seat and the at least two sets of the conductive bracket portion extend outside the rubber seat, and at least two portions of the heat dissipation base portion are exposed to the light-emitting diode chip, and the light diode The body wafers are respectively electrically connected to any of the group of conductive supports exposed to the recesses, and the glue holders are further covered with a sealing body for covering the LEDs to form the SMD light-emitting diodes. . The manufacturing method disclosed in the present invention is as above, and the difference between the first and the second is that the present invention is specifically implemented by forming at least two heat dissipation bases from the heat dissipation plate and the branching age, and at least two sets of conductive supports to maintain the electrothermal separation. The design of the body is a design in which at least two heat dissipation pedestals and at least two sets of guide packages are formed by thick plates to maintain electrothermal separation, and different types of hair, diode chips can be simultaneously used. That is, different types of light-emitting diode chips can be respectively disposed on the political pedestal, and the same conductive support group can form a hybrid connection, that is, the different types of light-emitting diode chips can be freely selected by 201135987, thereby avoiding Limitations on the use of light-emitting diode wafers. From the above technical means, the present invention is capable of using the technical effects of different types of light-emitting one-pole wafers. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail in conjunction with the Formulas and the Examples, and thus the implementation process of the present invention for how to apply the skills and achieve technical effects can be fully understood and implemented. The following is the first embodiment of the method for fabricating the electrothermal split type light-emitting diode support structure disclosed in the following, and please refer to "3rd picture" and "4th figure" for the $3 picture. The method for producing the electrothermal split type light-emitting diode support of the present invention is the same as that of the first embodiment. The figure of the fourth embodiment is the heat-dissipating plate of the electric heating knife and the light-pole support structure of the present invention. A stereoscopic view is made with the age of the bracket. First, a heat dissipation plate 10 having at least two heat dissipation pedestals U is formed by stamping, that is, at least two sags are formed on the heat dissipation plate 1G (step 11 〇) The bracket plate 20 of the saddle bracket 21, that is, at least two sets of the conductive brackets 21 are formed on the bracket plate 20 (step (4)). The number of conductive brackets formed on the support 2 will be determined according to the number of heat sinks n formed by the heat sink. (4) The number of the heat shields 21 will be the same as the number of heat sinks u formed by the heat sinks, and each The group of conductive brackets 21 has a positive conductive support 22 and a negative conductive support 23, respectively. In FIG. 4, three heat dissipation pedestals U are formed on the heat dissipation plate 1 ,. Therefore, two sets of conductive supports 2 are illustrated on the support plate 2G, and the heat dissipation pedestal 201135987 11 and the conductive support 21 are illustrated. The number of the embodiments is merely illustrative, and the scope of the invention is not limited by the drawings. The heat dissipating plate 10 and the bracket plate 20 are respectively positioned and coupled to each other through the positioning portions (12, 24) disposed on the heat dissipating plate 1 and the bracket plate 20, that is, the heat dissipating plate 1 and the bracket plate 20 are coupled to each other to at least The two heat dissipation bases 11 are disposed between the at least two sets of the conductive supports 21 (step 130). It is noted that at least two heat dissipation bases u and at least one set of the conductive supports 21 are not connected to each other, thereby dissipating heat and electricity. The connections are separated to form a form of electrothermal separation. ^ The heat sink 丨〇 and the bracket plate 20 at this time are integrally formed. The above description and drawings are merely illustrative of the heat dissipation plate 1 〇 and the support plate 2 〇 process, and are not limited by the description and the drawings. Application area. The heat sink 1 having at least two heat sink bases and the at least two sets of conductive brackets 21 are formed by stamping, and the brackets 20 can be made of a conductive or thermally conductive "metal plate or alloy plate", for example: heat dissipation The plate 1〇 and the bracket plate 2〇 can be made of steel, iron, aluminum alloy or other materials with good electrical conductivity and thermal conductivity, and φ, that is, the heat dissipation base 11 and the conductive support 21 have good electrical conductivity and thermal conductivity. The material of the heat sink 10 and the bracket plate 2 is merely exemplified here, and is not limited to the scope of application of the present invention. Next, please refer to "3rd figure" and "5th figure", "5th. FIG. 2 is a top plan view showing the structure of the electrothermal split type light-emitting diode support of the present invention; respectively, the heat dissipation plates 10 having at least two heat dissipation bases η separated from each other and having at least two sets of conductive supports 21 are manufactured through the above process. After the support plate 20 is assembled and the heat dissipation plate 10 and the support plate 20 are lightly coupled to each other, the glue holder 30' is formed in an insert molding manner so that each of the heat dissipation bases η and each group The conductive bracket 201135987 21 is partially embedded in the rubber seat 30 (step 14〇). In the actual manufacturing process, only the upper mold (not shown) and the lower mold (not shown) are used to dissipate each heat. The pedestal 11 and each set of the conductive brackets 21 are embedded therein, and each of the heat dissipation pedestals 11 and each set of the conductive brackets 21 can be partially buried in the plastic seat 30 while the injection-molding rubber seat is being performed. The mold and the lower mold can be once and sexually demolded, and the process of burying the plastic seat 30 can be completed, and the material of the plastic seat 3 is made of polyphthalamide (PPA) or the like. As a material of the illuminating-polar structure of the hybrid 3G, the material of the rubber _ 30 is merely used as a paste, and is not limited to the application scope of the present invention. When the molding base 30 is shot, the recess 31 is formed in the rubber seat 3, and each of the heat dissipation base U and each of the group of conductive brackets 21 is exposed to the recess of the rubber seat 3 (step 140). And each set of conductive brackets 21 will extend out of the glue holder 30 (step 140). In order to facilitate connection with other electronic devices (not shown in the drawings), the motherboard, the circuit board, etc., are merely illustrative of the scope of application. Each set of conductive brackets 21 is exposed to a portion of the recess 31 of the rubber seat 30, and each set of mosquito guides 21 extends out of the county to provide a secret connection. The portion of the recessed portion 31 of the plastic seat is electrically connected to the light-emitting diode chip (not shown) disposed on each of the heat-dissipating bases n in the rubber seat 3G__31, and Each of the ancestral conductive brackets 21 extends out of the rubber seat 3 (four) portion for forming an electrical connection on the outside of the rubber seat 30. For example, the present invention is not limited thereto, and is subsequently disposed in the depressed portion of the _ 3 〇 The light-emitting diode chip (not shown in the figure) on each of the heat-dissipating pedestals 11 in 31 is provided for heat dissipation of the light-emitting diode chip through each of the scatter 201135987 hot pedestals 11 and through each group. The conductive branch (4) is exposed to a portion of the recessed portion 31 of the rubber seat 30, and the lifter and the guide strip 21 extend out of the portion of the plastic seat 3; the light-emitting diode chip is electrically connected to other electronic devices. The structure of the electrothermal separation type light-emitting diode formed by the above process can be referred to as shown in Fig. 5. Next, the following is the second implementation of the method for fabricating the electrothermal split-type LED structure of the present invention, and please refer to "6th" and "7A"; The figure shows the second solid silk sample forming method of the electrothermal separation type light-emitting diode support structure of the present invention; the "7A figure" is the thick plate of the electrothermal separation type light-emitting diode support structure of the present invention. Stereoscopic view; firstly, a thick plate 4 having two thickness differences is formed in an extrusion manner (step 210). The above manner is merely illustrative and is not intended to limit the application of the present invention. Then, please refer to the "Picture 6" and "Picture 7B". The "%.®" green is shown as the heat sink base and conductive bracket of the thick plate of the electrothermal split type light-emitting diode support structure of the present invention. Forming a schematic diagram of the body; forming at least two heat dissipation pedestals 41 (step 22 〇) in a thick portion of the thick plate 40 by means of punching (gamma beer), and forming at least two at a small thickness of the thick plate 40 by stamping The set of conductive brackets 42 (step 230) ', the number of conductive brackets 42 formed on the thick sheet 40 will be determined according to the number of heat sink bases 41 formed on the thick sheets 4, that is, the number of conductive brackets 42 will be thick and thin. The number of the plates 40 is the same, and each of the ___ group of conductive holders 42 has a positive conductive support 43 and a negative conductive support 44, respectively. 12 Uj 201135987 And in the "7A" and "7B" towels form three heat dissipation pedestals 41 on the thick plate *, therefore, three sets of conductive brackets 42 are formed on the thick plate 4 ,, in the drawing *The wire holder 4 丨 (10) material holder 42 _ the amount is merely an example; the description of the 'closed here' is limited to the application of the invention. The cake is noted that at least two of the seats 41 and the at least one group of brackets 42 on the board 4G are not connected to each other', so that the heat dissipation and the electrical connection are separated to form an electrothermal separation form. . The thick plate 40 can be made of a metal plate or an alloy plate with good electrical conductivity and thermal conductivity. For example, the thick plate 4G can be made of copper, iron, gold or other materials with good electrical conductivity and thermal conductivity, that is, heat dissipation. The susceptor ^ and the conductive support Μ will have good electrical conductivity and _ properties, and are merely illustrative of the material of the thick slab 4 ,, and are not limited to the application scope of the present invention. Then, please refer to "Figure 6" and "Figure 8" at the same time. "Figure 8" is a schematic plan view of the structure of the electrothermal split type light-emitting diode support according to the present invention. After manufacturing the at least two heat dissipating pedestals and the at least two sets of the thin plates 40 of the conductive brackets 42 respectively, the rubber seats 5 are formed by insert molding to make each of the heat sink bases 41 and each set of conductive brackets 42 are partially embedded in the rubber seat 5〇 (step 24〇), in the actual manufacturing process + 'only need to pass through the upper mold (not shown) and the lower mold (10) is not shown) Each of the heat dissipation bases 41 and each set of conductive brackets 42 are embedded therein, and in the injection molded plastic seat 50, each of the heat dissipation bases 41 and each set of the conductive support brackets 42 can be simultaneously buried in the rubber seat. Within 5 inches, the upper mold and the lower mold can be demolded at one time, and the process of burying the rubber seat 5〇 can be completed, and the material of the rubber seat of the rubber seat can be condensed with polyphthalamide. PPA) or other 13 201135987 application As the thermoplastic resin plastic holder structure of a light emitting diode 5〇 is, in this embodiment only Description Material For wins seat 50 and is not present in order to date iv wear applications range threat. When the molding base 50 is injected, the recesses & will be formed in the rubber seat 5, and each of the heat dissipation bases 41 and each of the sets of the conductive brackets 42 will be exposed to the recesses 51 of the rubber seat 50 (steps) 24〇), and each set of conductive brackets 42 will extend out of the rubber seat 50 (step 240). Each set of conductive brackets 42 is exposed to a portion of the recess 51 of the rubber seat 5, and a portion of each of the conductive brackets 42 extending out of the base 5 is used to provide an electrical connection. The portion of the recessed portion of the pedestal is electrically connected to the illuminating diode chip (not shown) disposed on each of the heat dissipation pedestals 4 ι in the recess 51 of the shank 50 And each (4) electric bracket 42 extends out of the rubber seat 5〇 to form an electrical connection on the outside of the plastic seat % to facilitate electrical connection with other electronic devices (shown in the drawing), for example, Each of the heat sink wafers (shown in the figure) disposed in the recess 51 of the rubber seat 5G is provided for providing heat dissipation of the light emitting diode chip through each of the bulk M1, and the money is used for each A rotating electrical frame 42 is exposed to a portion of the recessed portion 51 of the rubber seat 5,, and provides a portion of the light-emitting diode rafter and the through-counter-group conductive core 42 extending the transposition 5Q, M, the light-emitting diode crystal >{Electrically connected to other electronic devices. Separate light-emitting diodes through the top-loading material. Refer to Figure 8 for reference. Cong and Zhu, and,. Next, please refer to "FIG. 9A", and "FIG. 9A" is a schematic top view showing the first configuration of the LED light-emitting diode structure of the 201135987 electrothermal split type light-emitting diode support structure. Herein, the first embodiment of the present invention is used as a description of the configuration of the light-emitting diode wafer. The second embodiment of the present invention is also configured to configure the light-emitting diode wafer as in the first embodiment. The description is merely illustrative here, and is not intended to limit the application of the present invention. The negative electrode of the first light-emitting diode chip 61 is fixed to the first-side heat-dissipating susceptor 111 exposed to the recessed portion 31 of the plastic holder 30 by a surface mount device (SMD). The negative electrode of the polar body wafer 62 is fixed to the second heat dissipation base 112 exposed to the recessed portion 31 of the rubber seat 30, and the negative electrode of the third light emitting diode chip 63 is fixed to the recess exposed to the plastic seat 3〇. The third heat dissipation base 113 of the portion 31. ^ Then, the positive electrode of the first LED package 61 is electrically connected to the positive electrode holder 221 of the first group of conductive holders 211 exposed to the recess 31 of the holder 3 by wire bonding. Connecting, and electrically connecting the first heat dissipation pedestal lu φ (ie, the negative electrode of the first luminescent diode chip 61) to the negative conductive support 231 of the first set of conductive supports 211 exposed to the recess 31 of the rubber seat 30 . And electrically connecting the positive electrode of the second LED chip 62 to the positive conductive bracket milk of the second set of conductive brackets 212 exposed to the recess 31 of the rubber seat 3, and the second heat sink base 112 (ie, The negative electrode of the second LED chip & is electrically connected to the negative mosquito guide 232 of the second set of conductive supports 212 exposed to the recess 31 of the rubber holder 30. After taking the third light-emitting diode wafer 63 # positive electrode and the positive conductive conductive bracket milk of the third group of conductive brackets 213 exposed to the recess of the rubber seat, the electrical connection is made to 15 I u 201135987, and the third heat dissipation base is The holder 113 (ie, the negative electrode of the third LED chip 63) is electrically connected to the negative electrode conductive holder 233 of the third group of conductive holders 213 exposed to the holder 30_trap 31. • A set of conductive supports 211 can respectively provide the first light-emitting diode chip 61; the same electrical polarity, the second set of conductive supports 212 can respectively provide the second light-emitting diode chip 62 * the same electrical polarity And the third set of conductive supports can provide different electrical polarities of the second light-emitting one-pole wafer 33, respectively. In addition to the wire bonding technique, the first light-emitting diode chip 61, the second light-emitting diode body 62, and the third light-emitting diode chip 63 are respectively inoculated with the first group of guide brackets and the second group of conductive brackets. In addition to the electrical connection of the third group of conductive supports, flip chip b〇nding can be used to electrically connect the above-mentioned light-emitting diode wafers with each set of conductive supports, as to the wire bonding technology. And the flip-chip bonding technology can be referred to the prior art, and is not described herein again, and is merely exemplified, and the application scope of the present invention is limited in the above manner. • Next, please refer to the “Picture 9B”, which shows a schematic view of the second configuration of the LED array structure of the electrothermal split diode package structure of the present invention. In the second configuration, the positive electrode of the first-emitting diode chip 61 is fixed on the first heat-dissipating susceptor lu exposed to the recessed portion 31 of the rubber holder 30, and the positive electrode of the second light-emitting diode Ba piece 62 is attached. Fixing on the second heat dissipation base 112 exposed to the recessed portion 31 of the kick seat and fixing the negative electrode of the third light emitting diode wafer 63 to the third heat dissipation base exposed to the recess portion 31 of the rubber seat 30 113 on. Then, through the wire bonding technique (wjreb〇ncjing), the negative electrode of the first light-emitting diode 201135987 body piece 6i and the first group of conductive brackets 211 exposed to the depressed portion w of the rubber seat %, the negative electrode holder 231 Forming an electrical connection, and exposing the first heat dissipation base (1) (ie, the positive electrode of the fourth photo-polar body wafer 61) to the positive conductive support 221 of the first set of conductive supports 211 of the recessed portion of the plastic seat 3: 31 Electrically connecting. The negative electrode of the first LED chip 62 is electrically connected to the negative electrode conductive bracket of the first group of conductive brackets exposed to the recess π 31 of the rubber seat 30 to provide a second heat dissipation. The pedestal 112 (ie, the positive pole of the second illuminating diode chip 62) is electrically connected to the second set of conductive brackets 212 of the recessed portion 31 of the rubber seat 30. The positive electrode of the two-emitting diode chip 63 is electrically connected to the positive conductive support 223 of the second set of conductive supports 213 exposed to the recess 31 of the plastic seat, and the third heat-dissipating base i 13 (ie, the third light-emitting) The negative electrode of the diode chip 63) is exposed to the depressed portion of the plastic seat 3G The negative conductive support 233 of the third set of conductive supports 213 of 31 is electrically connected. The conductive support 211 can provide the electrical polarity of the first light-emitting diode chip, and the second set of conductive support 212 can Different electrical polarities of the second LED chip 62 are respectively provided, and the third group of conductive supports 213 can respectively provide different electrical polarities of the second LED chip 33. Next, please also "9A" and As shown in FIG. 9B, through the first set of conductive brackets 211, the second set of conductive supports 212, and the third set of conductive supports 213, the second light emitting diodes can be respectively paired with the first light emitting diode chip 6 The chip 62 and the second LED chip 63 are controlled, and different types (PNP type or npn type) of the LED chip can be used respectively, thereby further improving the use efficiency of the LED chip. 17 201135987 Also, the "9A" and "9B" modes provide only the configuration of the body and the manner of electrical connection, which are merely illustrative and limit the scope of application of the present invention. For the first time, please refer to the "1st figure" as shown in the "1st figure". Green is the top view of the light-emitting diode package of the separate U-diode support structure package of the present invention. ^, here, only the first embodiment of the present invention is used as a description of the configuration of the light-emitting diode wafer. The second embodiment of the present invention is also configured to emit a light-emitting diode wafer as in the first embodiment. The description of the polar body wafer is merely exemplary here, and is not intended to limit the application of the present invention. Then, the colloid 7 is formed on the recess 31 of the rubber seat 30, and the encapsulating colloid can cover the LED chip 6 in the recess, and the scale body can be dispersed. Here, it is only for the purpose of limiting the application of the invention, and the encapsulating colloid may be doped with the glazing powder, so that the light emitted by the illuminating diode wafer 60 is irradiated to the phosphor powder. When the visible light of φ another color is excited, the light emitted by the LED of the light-emitting diode can be mixed with the light excited by the fluorescent powder to produce a light mixing effect. In summary, it can be seen that the difference between the present invention and the prior art is that one of the specific embodiments of the present invention is that the heat sink is coupled with the bracket plate to form at least two heat sink bases and at least one set of conductive brackets to maintain the electrothermal separation design. Another specific embodiment is a design in which at least two heat dissipation pedestals and at least two sets of conductive supports are formed by thick plates to maintain electrothermal separation, and different types of illuminating diode chips can be simultaneously used, that is, different types can be used. The LED chips are respectively disposed on the heat dissipation base and electrically connected to different conductive bracket groups respectively, that is, the different types of light-emitting diode chips of m 18 201135987 can be freely selected to avoid the use of the LED chip. The upper limit. By using such a technical means, it is possible to solve the problem that when the plurality of light-emitting diode chips are disposed on the heat dissipation base of the prior art, the same type of light-emitting diode wafer must be used, and the use of the light-emitting one-pole wafer is limited. In turn, the technical effect of simultaneously using different types of light-emitting diode chips is achieved. While the embodiments of the present invention have been described above, the above description is not intended to limit the scope of the invention. Any changes in the form and details of the embodiments may be made without departing from the spirit and scope of the invention. The scope of the invention is to be determined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side elevational cross-sectional view showing the configuration of a light-emitting diode of the first known light-emitting diode support structure. Fig. 2 is a top plan view showing the arrangement of a light-emitting diode of the second known light-emitting diode support structure. FIG. 3 is a flow chart showing a method for fabricating the first embodiment of the electrothermal split type light-emitting diode support structure of the present invention. FIG. 4 is a perspective view showing the coupling of the heat dissipation plate and the support plate of the electrothermal split type light-emitting diode support structure of the present invention. Fig. 5 is a top plan view showing the structure of the electric age-division illumination minus the structure of the present invention. FIG. 6 is a flow chart showing a second embodiment of the electrothermal split type light-emitting diode support structure of the present invention. FIG. 7A is a perspective view showing the thickness of the 201135987 thin plate of the electrothermal separation type light-emitting diode support structure of the present invention. FIG. 7B is a perspective view showing the heat dissipation base and the conductive support of the thick plate of the electrothermal separation type light-emitting diode support structure of the present invention. Figure 8 is a top plan view showing the structure of the electrothermal separation type Wei diode of the present invention. FIG. 9A is a top plan view showing a first configuration aspect of a light-emitting diode chip according to the structure of the electrothermal split type light-emitting diode support of the present invention.
第9B圖繪示為本發明電熱分離式發光二極體支架結構配置 發光一極體晶片的第二配置態樣俯視示意圖。 發 ^第10圖綠示為本發明電熱分離式發光二極體支架結構封裝 光二極體晶片的俯視示意圖。 又 【主要元件符號說明】 10 散熱板 11 散熱基座 111 第一散熱基座 112 第一散熱基座 113 第三散熱基座 12 定位部 20 支架板 21 導電支架 211 第一組導電支架 212 第二組導電支架 213 第三組導電支架 22 正極導電支架 221 正極導電支架 20 201135987FIG. 9B is a top plan view showing a second configuration aspect of the light-emitting diode chip structure of the electrothermal split type light-emitting diode support structure of the present invention. Figure 10 is a top view of the photodiode wafer package of the electrothermal split type light-emitting diode support structure of the present invention. [Main component symbol description] 10 heat sink 11 heat sink base 111 first heat sink base 112 first heat sink base 113 third heat sink base 12 positioning portion 20 bracket plate 21 conductive bracket 211 first set of conductive bracket 212 second Group Conductive Bracket 213 Third Group Conductive Bracket 22 Positive Conductive Bracket 221 Positive Conductor Bracket 20 201135987
222 正極導電支架 223 正極導電支架 23 負極導電支架 231 負極導電支架 232 負極導電支架 233 負極導電支架 24 定位部 30 膠座 31 凹陷部 40 厚薄板 41 散熱基座 42 導電支架 43 正極導電支架 44 負極導電支架 50 膠座 51 凹陷部 60 發光二極體晶片 61 第一發光二極體晶片 62 第二發光二極體晶片 63 第三發光二極體晶片 70 封裝膠體 81 膠座 82 凹陷部 83 支架 84 電性連接部 85 發光二極體晶片 m 21 201135987 86 電性導線 87 封裝膠體 88 散熱基座 步驟110於散熱板上形成至少二散熱基座 步驟120於支架板上形成至少二組導電支架 步驟130散熱板與支架板相互耦合，以使至少二散熱基座設 置於至少二組導電支架間，且至少二散熱基座與至 少二組導電支架不相連 步驟140至少二散熱基座以及至少二組導電支架部分被埋 入於膠座内，且至少二散熱基座以及至少二組導電 支架部分暴露於膠座的凹陷部，及至少二組導電支 架部分延伸於膠座外 步驟210製成具有二種厚度差異的厚薄板 步驟220於厚薄板厚度較大處形成至少二散熱基座 步驟230於厚薄板厚度較小處形成至少二組導電支架，且至 少二組導電支架與至少二散熱基座不相連 步驟24G至少二散熱基座以及至少二組導電支架部分被埋 入於膠座内’且至少二散熱基座以及至少二組導電 支架部分暴露於膠座的凹陷部，及至少二組導電支 架部分延伸於膠座外222 Positive Conductive Bracket 223 Positive Conductor Bracket 23 Negative Conductor Bracket 231 Negative Conductor Bracket 232 Negative Conductor Bracket 233 Negative Conductor Bracket 24 Positioning Section 30 Plastic Block 31 Depression 40 Thick Plate 41 Heat Dissipation Base 42 Conductive Bracket 43 Positive Conductive Bracket 44 Negative Conductor Bracket 50 Plastic seat 51 Recessed portion 60 Light-emitting diode wafer 61 First light-emitting diode wafer 62 Second light-emitting diode wafer 63 Third light-emitting diode wafer 70 Package colloid 81 Plastic seat 82 Depression 83 Bracket 84 Electric Connecting portion 85 light emitting diode chip m 21 201135987 86 electrical wire 87 encapsulant 88 heat sink base step 110 forming at least two heat sink base on the heat sink step 120 forming at least two sets of conductive brackets on the bracket plate step 130 heat dissipation The board and the bracket board are coupled to each other such that at least two heat sink bases are disposed between the at least two sets of conductive brackets, and at least two heat sink bases are not connected to the at least two sets of conductive brackets. Step 140: at least two heat sink bases and at least two sets of conductive brackets Partially embedded in the rubber seat, and at least two heat sink bases and at least two groups The electric bracket is partially exposed to the recess of the rubber seat, and the at least two sets of conductive bracket portions extend outside the rubber seat. Step 210 is formed to have a thick plate having two thickness differences. Step 220 forms at least two heat sink bases at a thick thickness of the thick plate. Step 230: forming at least two sets of conductive brackets at a small thickness of the thick plate, and at least two sets of conductive brackets are not connected to the at least two heat sink bases. Step 24G at least two heat sink bases and at least two sets of conductive bracket portions are buried in the rubber seat And at least two heat dissipation bases and at least two sets of conductive bracket portions are exposed to the recessed portion of the rubber seat, and at least two sets of conductive support portions extend outside the plastic seat
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