TWI425600B - Package structure and packaging method of light emitting diode - Google Patents

Description

Light-emitting diode package structure and packaging method

The present invention relates to a light emitting diode package structure and a package method, and more particularly to a light emitting diode package structure and a package method capable of effectively deriving thermal energy generated inside the package structure.

In recent years, Light Emitting Diode (LED) has the advantages of low power consumption, long component life, no need for warming time and fast response speed, and its small size, vibration resistance, and mass production are easy. Light-emitting or array-type components are used to meet the needs of the application. Therefore, LEDs are commonly used in indicators and display devices for information, communication and consumer electronics, such as mobile phones and personal digital assistants (Personal Digital Assistant, PDA) screen backlight, various outdoor displays, traffic lights and lights. Among them, the high-power light-emitting diode can provide high-brightness light, but it will affect the luminous efficiency due to the temperature increase after a period of continuous illumination. It can be seen that a good heat dissipation mechanism is indispensable for high power light-emitting diodes.

The traditional high-power light-emitting diodes use the wire holders in the package structure to naturally dissipate heat. However, due to their poor heat dissipation, most of them are currently equipped with heat-dissipating fins on the light-emitting diode package structure to improve the heat dissipation effect. However, the heat dissipating fins mounted on the LED package structure increase the overall package volume of the LED, which will make the LED lose its small volume.

Therefore, how to improve the heat dissipation efficiency of the light-emitting diode package structure without affecting the original characteristics of the light-emitting diode One of the research and development priorities of the light diode industry.

In view of the problem that the prior art cannot effectively improve the heat dissipation efficiency of the LED package structure, the present invention discloses a LED package structure and a package method, which can not affect the original characteristics of the LED. In this case, the heat dissipation efficiency of the light emitting diode package structure is effectively improved to improve the luminous efficiency and the service life of the light emitting diode.

The invention provides a light emitting diode package structure comprising a base, a light emitting diode chip, an encapsulant and two pins. The base has a receiving groove, and the base further comprises: a plastic layer and a high thermal conductive material layer, the plastic layer has a groove, and the plastic layer is composed of a plastic material and a heat resistant material; the high thermal conductive material layer is disposed on the surface of the plastic layer And forming a receiving groove with the groove, and the LED chip is placed in the receiving groove. One end of each pin is electrically connected to the LED chip, and the encapsulant is disposed on the pedestal to cover the accommodating groove and the end of each pin electrically connected to the illuminating diode chip.

The invention provides a light emitting diode packaging method, which firstly shapes a plastic material and a heat resistant material to form a plastic layer having a groove. Next, a layer of highly thermally conductive material is formed on the surface of the plastic layer having the recess to form a susceptor having a receiving groove, wherein the layer of highly thermally conductive material forms a receiving groove with the groove. Next, two pins are formed on the pedestal. Next, the LED chip is placed in the receiving groove of the base, and the LED chip is electrically connected to the pins. Then, an encapsulant is formed on the pedestal to cover the accommodating groove and each pin is electrically connected to one end of the illuminating diode chip.

As can be seen from the above, the present invention is a composite of a plastic material and a material having high thermal conductivity. The composite material of the same composition forms the pedestal in the package structure, so that the thermal energy generated by the illuminating diode chip disposed in the accommodating groove of the pedestal can be quickly dissipated to the outside of the package structure through the susceptor. In other words, the present invention can effectively derive the thermal energy accumulated in the package structure, thereby improving the luminous efficiency and the service life of the light-emitting diode.

The embodiments of the present invention will be described in detail below with reference to the drawings and embodiments, so that the application of the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.

FIG. 1A to FIG. 1C are cross-sectional views showing the light emitting diode package structure of the present invention in the manufacturing process of the first embodiment. Referring to "FIG. 1A", first, the susceptor 110, the leads 120a, and the leads 120b are formed. In this embodiment, the susceptor 110 having the accommodating groove 112 is formed by using the plastic material 111 and the high thermal conductive material 113, and then the pin 120a and the pin 120b are formed on the pedestal 110, and the pin 120a is One end of the pin 120b is located in the receiving groove 112 of the base 110, respectively. The material of the lead 120a and the pin 120b may be copper or other conductive material, and the forming method may be a stamping process or an etching process.

In particular, in the embodiment, the susceptor 110 is formed by first doping the high thermal conductive material 113 into the plastic material 111, and then using the plastic material 111 doped with the high thermal conductive material 113 as an injection material to form an injection molding process. Base 110. The weight ratio of the high thermal conductive material 113 to the plastic material 111 is, for example, less than or equal to 10, and the plastic material 111 used in the embodiment may be polyphthalamide (PPA), but is not limited thereto. The high thermal conductive material 113 may be a nano copper powder, a copper oxide powder, a nano ceramic (such as aluminum oxide (Al ₂ O ₃ )) powder or a nano carbon material.

It should be noted that, in addition to the high thermal conductive material 113 being incorporated into the plastic material 111 to form the susceptor 110 to improve the thermal conductivity of the susceptor 110, the present invention can further be further in the plastic material 111 in this embodiment. The heat resistant material 115 is incorporated in order to increase the heat resistance of the susceptor 110. The material of the heat resistant material 115 may be mineral fiber, but is not limited thereto.

Referring to FIG. 1B, after the pedestal 110, the leads 120a and the leads 120b are formed, the luminescent diode chip 130 is placed in the accommodating groove 112, and the illuminating diode chip 130 is respectively disposed. The two end electrodes are electrically connected to the pin 120a and the pin 120b. The light emitting diode chip 130 may be a red light emitting diode chip, a blue light emitting diode chip, or a green light emitting diode chip, and is fixed to the base through a conductive paste (not shown), for example. The accommodating groove 112 of the 110 is inside. Here, the conductive paste is used as a heat conduction medium between the LED chip 130 and the susceptor 110 to increase the heat transfer rate between the LED wafer 130 and the susceptor 110.

It should be noted that, in the "1B", the LED chip 130 is electrically connected to the pin 120a and the pin 120b through a wire bonding technique, but it is only one of the present inventions. The examples are not intended to limit the invention. Those skilled in the art will appreciate that the LED chip 130 can also be electrically coupled to the leads 120a and 120b by flip chip bonding.

Referring to FIG. 1C, an encapsulant 140 is formed on the susceptor 110 to cover the accommodating groove 112 and the pin 120a on which the illuminating diode chip 130 is placed. The pin 120b is electrically connected to one end of the LED chip 130. That is, one end of the pin 120a and the pin 120b that is not electrically connected to the LED chip 130 is exposed outside the encapsulant 140 to be electrically connected to other electronic devices (not shown). In other words, the LED chip 130 is electrically connected to other electronic devices through the pins 120a and 120b.

As described above, the encapsulant 140 is used to protect the LED chip 130 placed in the accommodating recess 112 from external temperature, moisture, and noise, and is, for example, dispensed. The way to form. In addition, the encapsulant 140 may also be doped with phosphor powder (not shown), so when the light emitted by the LED chip 130 is irradiated to the phosphor powder to excite visible light of another color, the light is emitted. The light emitted by the polar body chip 130 can be mixed with the light excited by the phosphor powder to produce a light mixing effect.

Although the pin 120a and the pin 120 are formed on the surface of the susceptor 110 in the above embodiment, the present invention is not limited thereto. FIG. 2A to FIG. 2B are cross-sectional views showing the light emitting diode package structure of the present invention in the manufacturing process of the second embodiment. Please refer to FIG. 2A. The reference numerals in the drawings are the same as those in the previous embodiment, and the materials and manufacturing methods of the components are the same as or similar to those of the foregoing embodiments, and will not be described below.

In this embodiment, after the pins 220a and the leads 220b are formed, the susceptor 110 is formed by using the plastic material 111 doped with the high thermal conductive material 113 to be buried, so that the pins 220a and 220b are partially buried. Inside the base 110. The one ends of the pins 220a and 220b are respectively exposed in the receiving slots 112 of the base 110.

Please refer to "FIG. 2B". As in the foregoing embodiment, this embodiment is formed. After the pedestal 110, the leads 220a and the leads 220b, the LEDs 130 are placed in the accommodating slots 112, and the electrodes at both ends of the LEDs 130 are electrically connected to the leads. 220a and pin 220b. In particular, the LED chip 130 is disposed on the pin 220a in the accommodating groove 112 in this embodiment. Therefore, the thermal energy generated by the illuminating diode 130 when illuminating can be excellent in thermal conductivity. In addition to the vacancy of the pedestal 110, it can also be dissipated to the outside of the package structure through the pins 220a. Here, the LED chip 130 is electrically connected to the lead 220b by, for example, a wire bonding technique, and is electrically connected to the pin 220a by a flip chip bonding technique. The detailed process of forming the encapsulant 140 on the susceptor 110 is as described in the first embodiment, and will not be described in detail herein.

It should be noted that, in the third embodiment of the present invention, after forming the pin 220a and the pin 220b, the heat dissipating block 310 may be formed first, and then the pedestal 110 is formed by means of burying, so that The pins 220a, 220b, and the heat slug 310 are partially buried in the susceptor 110 as shown in FIG. 3A. The surface 312 of the heat dissipation block 310 is exposed in the accommodating groove 112 of the susceptor 110, and the surface 314 of the heat dissipation block 310 is also exposed outside the susceptor 110.

As described above, when the light-emitting diode chip 130 is placed, it is placed on the surface 312 of the heat-dissipating block 310 exposed in the accommodating groove 112, as shown in FIG. 3B. In this way, the thermal energy generated by the light-emitting diode chip 130 during light emission can be directly dissipated to the outside of the package structure through the heat dissipation block 310 in addition to the heat dissipation through the base 110. The material of the heat dissipation block 310 includes, but is not limited to, a metal material.

In addition, in this embodiment, the LED chip 130 and the pin 120a are subsequently used. The process of electrically connecting the pins 120b and forming the encapsulant 140 is also the same as that of the first embodiment, and details are not described herein again.

As can be seen from the above, the susceptor 110 is made of a plastic material doped with a heat conductive material (and a heat resistant material) by an injection molding process, so that the susceptor made of a pure plastic material has a high thermal conductivity. That is to say, the thermal energy generated by the LED chip 130 during illumination can be quickly dissipated through the susceptor 110 to the outside of the LED package structure 100, thereby having better luminous efficiency and a longer service life.

Although the above embodiment incorporates a heat conductive material into a plastic material to form a susceptor of a package structure having a high thermal conductivity, the present invention is not limited thereto. Another embodiment of the present invention will be described in detail below with reference to the drawings.

FIG. 4A to FIG. 4B are cross-sectional views showing the light emitting diode package structure of the present invention in the manufacturing process of the fourth embodiment. Referring to FIG. 4A, although the pedestal 410 having the accommodating groove 412 is formed by using the plastic material 111 and the high thermal conductive material 113, the difference from the foregoing embodiment is that this embodiment is First, the plastic material 111 is used as an injection material for injection molding to form a plastic layer 411 having a groove 402, and then a high heat conductive material 113 is used to form a high heat conductive material layer 413 on the surface of the groove 402. Here, the groove 402 on the surface of which the high thermal conductive material layer 413 is formed is the receiving groove 412 of the susceptor 410. The plastic material 111 and the high thermal conductive material 113 used in this embodiment are, for example, the same as the foregoing embodiment, and are not described herein again.

In the above embodiment, the high thermal conductive material layer 413 is formed, for example, by spraying a powder of the high thermal conductive material 113. Moreover, although the present embodiment forms the highly thermally conductive material layer 413 only on the surface of the recess 402, the highly thermally conductive material layer 413 can also At the same time, it is formed on the surface of other portions of the plastic layer 411, and the present invention is not limited thereto.

Referring to FIG. 4B, after the pedestal 410 is formed, the pins 120a and the leads 120b are formed on the susceptor 10, and the luminescent diode chip 130 is placed in the accommodating groove 412, and then The electrodes at both ends of the LED chip 130 are electrically connected to the pins 120a and 120b, respectively. Then, an encapsulant 140 is formed on the pedestal 410 to cover the accommodating groove 412 in which the illuminating diode chip 130 is placed and the pin 120a and the pin 120b are electrically connected to one end of the illuminating diode chip 130. At this time, the process of the LED package structure 400 has been substantially completed. Since the materials and formation methods of the lead 120a, the lead 120b, the LED chip 130, and the encapsulant 140 are the same as or similar to those of the foregoing embodiment, they are not described herein again.

Continuing to refer to FIG. 4B, the difference between the LED package structure 400 and the LED package structure 100 illustrated in FIG. 1C is that the pedestal 410 of the LED package structure 400 is The plastic layer 411 and the high thermal conductive material layer 413 are formed, and the base 110 of the LED package structure 100 is made of a plastic material 111 doped with a high thermal conductive material 113 in an injection molding manner. However, the susceptor 410 has good thermal conductivity similarly to the susceptor 110, so that the thermal energy generated by the illuminating diode 130 during illuminating can be effectively transmitted to the outside of the illuminating diode package 400.

In summary, the present invention combines a plastic material and a material having high thermal conductivity to form a pedestal in a package structure, so that thermal energy generated by the illuminating diode chip disposed in the accommodating groove of the susceptor can be transmitted through the base. Seat and quickly dissipate to the outside of the package structure. It can be seen that the present invention can effectively accumulate in the package structure. The heat energy is derived, thereby improving the luminous efficiency and the service life of the light-emitting diode.

While the embodiments of the present invention have been described above, the above description is not intended to limit the scope of the invention. Any changes in the form and details of the embodiments may be made without departing from the spirit and scope of the invention. The scope of the invention is to be determined by the scope of the appended claims.

100‧‧‧Light emitting diode package structure

110‧‧‧Base

111‧‧‧Plastic materials

112‧‧‧ accommodating slots

113‧‧‧High thermal conductivity material

115‧‧‧heat resistant materials

120a‧‧‧ pin

120b‧‧‧ pin

130‧‧‧Light Diode Wafer

140‧‧‧Package colloid

220a‧‧‧ pin

220b‧‧‧ pin

310‧‧‧Heat block

312‧‧‧ surface

314‧‧‧ surface

400‧‧‧Light Emitting Diode Structure

402‧‧‧ Groove

410‧‧‧Base

411‧‧‧Plastic layer

412‧‧‧ accommodating slots

413‧‧‧High thermal conductivity material layer

1A to 1C are cross-sectional views showing the manufacturing process of the light emitting diode package structure of the present invention in the first embodiment.

2A and 2B are cross-sectional views showing the manufacturing process of the light emitting diode package structure of the present invention in the second embodiment.

3A and 3B are cross-sectional views showing the manufacturing process of the light emitting diode package structure of the present invention in the third embodiment.

4A and 4B are cross-sectional views showing the manufacturing process of the light emitting diode package structure of the present invention in the fourth embodiment.

100‧‧‧Light emitting diode package structure

110‧‧‧Base

111‧‧‧Plastic materials

112‧‧‧ accommodating slots

113‧‧‧High thermal conductivity material

115‧‧‧heat resistant materials

120a‧‧‧ pin

120b‧‧‧ pin

130‧‧‧Light Diode Wafer

140‧‧‧Package colloid

Claims (9)

A light emitting diode package structure includes: a base having a receiving groove, the base further comprising: a plastic layer having a groove, wherein the plastic layer is composed of a plastic material and a heat resistant material; a high thermal conductive material layer disposed on the surface of the plastic layer and forming the receiving groove with the groove; a light emitting diode chip disposed in the receiving groove; two pins, each of the pins One end is electrically connected to the LED chip, and an encapsulant is disposed on the pedestal to cover the accommodating groove, and each of the pins is electrically connected to one end of the illuminating diode chip. The light emitting diode package structure according to claim 1, wherein the high thermal conductive material is a nano ceramic powder, a copper oxide powder, a nano carbon material or a nano copper powder. The light emitting diode package structure according to claim 2, wherein the nano ceramic powder is an aluminum oxide powder. The light emitting diode package structure according to claim 1, wherein the heat resistant material is a mineral fiber. A light emitting diode packaging method comprising the steps of: injection molding a plastic material and a heat resistant material to form a plastic layer having a groove; forming a high thermal conductive material on the surface of the plastic layer having the groove a layer to form a pedestal having a receiving groove, wherein the layer of highly thermally conductive material a recess is formed in the accommodating groove; two pins are formed on the pedestal; a luminescent diode chip is placed in the accommodating groove of the pedestal, and the illuminating diode chip and each of the pins are One end is electrically connected; and an encapsulant is formed on the pedestal to cover the accommodating groove and each of the pins is electrically connected to one end of the illuminating diode chip. The method of claim 2, wherein the high thermal conductivity material is a nano ceramic powder, a copper oxide powder, a nano carbon material or a nano copper powder. The method of encapsulating a light emitting diode according to claim 6, wherein the nano ceramic powder is an aluminum oxide powder. The method of encapsulating a light emitting diode according to claim 5, wherein the heat resistant material is a mineral fiber. The method of claim 2, wherein the step of forming the high thermal conductive material layer on the surface of the plastic layer having the groove is to spray the powder of the high thermal conductive material in the groove. The surface.