200947642 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體封裝結構及封裝方法， 且特別是有關於一種能夠有效地將封裝結構内部所產生之熱 能導出之發光二極體封裝結構及封裝方法。 【先前技術】 Ο200947642 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode package structure and a package method, and more particularly to a light-emitting device capable of effectively extracting heat energy generated inside a package structure Polar body package structure and packaging method. [Prior Art] Ο
近年來，由於發光二極體(Light Emitting Diode，LED)具有 耗電量低、元件壽命長、無須暖燈時間及反應速度快等優點， 加上其體積小、耐震動、適合量產，料配合顧需求而製 成極小或陣列式的元件，因此發光二極體已普遍使用於資 訊、通訊及消費性電子產品的指示燈與顯示裝置上，如行動 電話及個人數位助理(P㈣nal Di_偏細，pDA)榮幕背 光源、各種戶外顯示器、交通號誌燈及車燈等。其中，高功 ，的發光二極體軸可提供亮度較高的祕，但其在持續發 亮-段時間後會因溫度升高而影響發光效率。由此可知，良 好的散熱機制是高功率發光二極體所不可或缺的。 的優點 傳統的高功率發光二極體是彻封裝結構巾的導線支架 自然散熱，但由於其散熱效果不佳，因此目前衫是在發光 二極體職結構上加裝散熱則，以提高散熱效果。然而， 加裝在發光二鐘職結構上的賴則會增加發光二極體 ，整體封㈣積，如此—來將使㈣光二極難失其體積小 如何在稍發光二極體縣所財的雜造成影 、别提下提阿發光二極體封裝結構的散熱效率，實為發 5 200947642 光一極體產業的研發重點之一。 【發明内容】 有黎於先前技術存在無法有效提高發光二極體封裝結構 之散熱效率關題’本發3腿揭露—紐光二歸封裝結構及 封裝方法’其可林影響發光二減原先嶋有之特性的情況 下’有效地提高發光二極贿裝結構的散熱效率以改善發光 二極體的發光效率及使用壽命。In recent years, Light Emitting Diode (LED) has the advantages of low power consumption, long component life, no need for warm-up time and fast response speed, plus its small size, vibration resistance, and mass production. In order to meet the needs of the customer to make very small or array components, LEDs have been commonly used in information and communication and consumer electronics indicators and display devices, such as mobile phones and personal digital assistants (P (four) nal Di_ partial Fine, pDA) Rong curtain backlight, various outdoor displays, traffic lights and lights. Among them, the high-powered LED pole can provide a high brightness, but it will affect the luminous efficiency due to the temperature increase after a continuous period of time. It can be seen that a good heat dissipation mechanism is indispensable for high power light-emitting diodes. Advantages The traditional high-power light-emitting diode is the natural heat dissipation of the wire bracket of the package structure towel, but due to its poor heat dissipation effect, the current shirt is equipped with heat dissipation on the light-emitting diode structure to improve the heat dissipation effect. . However, the addition of the light-emitting two-clock structure will increase the light-emitting diode, and the overall seal (four) product, so that the (four) light diode is difficult to lose its small size in the slightly light-emitting diode county. Miscellaneous shadows, not mentioning the heat dissipation efficiency of the light-emitting diode package structure, it is one of the research and development priorities of the light industry. [Summary of the Invention] There is a lack of prior art in the prior art, which can not effectively improve the heat dissipation efficiency of the LED package structure. 'The 3 legs of the hair extension—News and the second package structure and packaging method' In the case of the characteristics, the heat dissipation efficiency of the light-emitting diode package structure is effectively improved to improve the luminous efficiency and the service life of the light-emitting diode.
本發明提供—槪光二極體封裝結構其包括基座、發光 二極體晶片、封裝膠體以及兩支引腳。其中 麵料與料咖，虛 晶片即是放置於該容置槽内。各引腳的—凝與發光二極體晶 片雜連接’而封裝賴是配·基座上㈣蓋住容置槽以及 各引腳與發光二極體⑼電性連接的一端。 本f月提供—種發光二極體封裝方法，其係先形成二引腳 與具有容置槽之基座，其中該基座係利用塑膠 料所製成，且各_之—端硫錄賴容置彻。接著1 2二極體晶収置在基賴容置彻，並且鎌光二極體晶 ^該些引腳紐連接。之後，在基座上形成—封裝膠體，以 覆盍住私置槽及各⑽雜連接至發光二極體晶片的一端。 由上述可知，本發明是以塑踢材料及具高導熱性的材料共 5六成的複D材料來形成封裝結射的基座，使得配置在基座 ua胃内之《光―極體晶片所產生的熱能能夠透過基座而 封裝結構外部。換言之，本發明可以有效地將累 《構中的熱能導出，進岐善發光二極體的發光效率 200947642 及使用壽命。 【實施方式】 以下將配合圖式及實施例來詳細說明本發明之實施方 式’藉此對本發明如何朗技術手段來解決技姻題並達成技 術功效的實現過程能充分理解並據以實施。 「第1A圖」至「第ic圖」繪示為本發明之發光二極體 封裝結構在第-實施例製造流程中的剖面示意圖。請參照「第 _ 1A圖」，首先形成基座110、引腳12〇a與引腳12〇b。其中， 本實施例係先利用塑膠材料1U與高導熱材料113製成具有容 置槽112的基座11〇 ’然後再於基座11〇上形成引腳12〇a與 引腳120b ’並令引腳i2〇a與引腳12〇b的一端分別位於基座 U0的容置槽112内。其中，引腳12〇a與引腳12%的材質可 以是銅或其纟導電材質’且其形力方法可以是沖壓製程或侧 製程。 特別的是’本實施例製作基座110的方法是先將高導熱材 © 料113摻入塑膠材料111中，接著將摻有高導熱材料113的塑 膠材料111作為射出原料，以透過射出成型製程來形成基座 。其中，高導熱材料113與塑膠材料ln的重量比值例如 疋小於或等於10，而本實施例所使用之塑膠材料ιη可以是 1鄰笨二甲醢胺(?0加她3：^11^(16，？?入），但不限於此。高導熱 材料113則可以是奈米銅粉末、氧化銅粉末、奈米陶瓷（如三 氣化二鋁(Al2〇3))粉末或奈米碳材。 值得一提的是，本發明除了將高導熱材料113摻入塑膠材 料中來製成基座110,以提高基座11()的導熱係數外，在 7 200947642 本實施例中更可以進一步在塑膠材料1U中摻入耐熱材料 115，以便於增加基座11〇的耐熱性。其中，耐熱材料115的 材質可以是礦物纖維，但不限於此。 請參照「第1B圖」’在形成基座11〇、引腳12〇a與引腳 120b之後，接著即是將發光二極體晶片13〇放置於容置槽112 内’並且为別將發光一極體晶片130的兩端電極電性連接至引 腳120a與引腳120b。其中，發光二極體晶片13〇可以是紅光 發光二極體晶片、藍光發光二極體晶片或綠光發光二極體晶 片，且其例如疋透過導電膠（未繪示）而固定在基座丨丨〇的容 置槽112内。在此，導電膠是作為發光二極體晶片13〇與基座 110之間的導熱媒介，以提高發光二極體晶片13〇與基座11〇 之間的導熱速率。 需要注意的是，雖然在「第1B圖」中，發光二極體晶片 130是透過打線接合(wire b〇nding)技術而與引腳l2〇a及引腳 120b電性連接，但其僅為本發明之一實施例，並非用以限定 〇 本發明。熟習此技藝者應該知道，發光二極體晶片13〇也可以 藉由覆晶接合(flip chip bonding)技術而與引腳12〇a及引腳 120b電性連接。 请參照「第1C圖」’在基座11〇上形成封裝膠體14〇，以 覆蓋住放置有發光二極體晶片丨3〇的容置槽112及引腳12〇a 與引腳120b電性連接至發光二極體晶片13〇的一端。也就是 說，引腳120a及引腳120b未電性連接至發光二極體晶片13〇 的一端是暴露於封裝膠體14()外，以便於與其他電子裝置（未 繪示）電性連接。換言之，發光二極體晶片13〇即是透過引腳 200947642 120a及引腳120b而與其他電子裝置電性連接。 承上所述’封裝膠體140是用以保護放置在容置槽112 内的發光二極體晶片130免受於外界溫度、濕氣與雜訊的影 響，且其例如是以點膠(dispensing)的方式形成。此外，封裝膠 體140中也可以摻有螢光粉（未繪示），因此當發光二極體晶 片130所發出的光線照射到螢光粉而使其激發出另一種顏色 的可見光時，發光二極體晶片130所發出的光線即可與螢光粉 所激發出來的光線混合而產生混光效果。 雖然在上述實施例中，引腳12〇a及引腳12〇是形成於基 座110的表面上，但本發明並不限定於此「第2A圖」至「第 2B圖」繪示為本發明之之發光二極體封裝結構在第二實施例 製造流程中的剖面示意圖。請先參照「第2A圖」，圖中標號 與前述實施例相同者’其所代表之元件的材質及製作方法與前 述實施例相同或相似，以下不再贅述。 本實施例是在形成引腳220a及引腳220b之後，利用摻有 φ 而導熱材料n3的塑膠材料111以埋入射出的方式形成基座 110 ’以使引腳220a及引腳220b部分地埋於基座110内。其 中’引腳220a及引腳220b的一端係分別暴露在基座no之容 置槽112内。 «月參照第2B圖」’如同前述實施例，本實施例在形成 基座110、引腳220a與引腳220b之後，接著即是將發光二極 體晶片130放置於容置槽112内，並將發光二極體晶片13〇 的兩端電極分別電性連接至引腳22〇a與引腳22〇b。特別的 疋’發光二極體晶片130在本實施例中是配置於容置槽112 9 200947642 内的引腳220a上’因此發光二極體晶片130在發光時所產生 的熱能除了可以經由熱傳導性佳的基座110散出之外，亦可以 透過引腳220a而政逸至封裝結構外部。在此，發光二極體晶 片130例如疋透過打線結合的技術而電性連接至引腳22〇b， 並以覆晶結合的技術電性連接至引腳220a。而後續在基座11〇 上形成封裝膠體140的詳細過程如第一實施例所述，此處不再 詳述。 值得一提的是，在本發明的第三實施例中，於形成引腳 220a與引腳220b之後，還可以先形成散熱塊31〇，然後再利 用埋入射出的方式形成基座11〇 ’而使引腳22〇a、引腳22〇b 及散熱塊310均部分地埋於基座u〇中，如「第3A圖」所示。 其中’散熱塊310的表面312是暴露於基座no的容置槽I】） 内，散熱塊310的表面314亦是暴露於基座11〇之外。 承上所述’在放置發光二極體晶片時，即是將其放置 於暴露於容置槽112内之散熱塊310的表面312上，如「第 ❹ 3B圖」所示。如此一來，即可使發光二極體晶片13〇在發光 時所產生的熱能除了經由熱傳導性佳的基座丨丨〇散出之外，亦 可透過散熱塊310而直接散逸至封裝結構外部。其中，散熱塊 310的材質包括但不限於金屬材料。 另外’本實施例後續將發光二極體晶片130與引腳12〇a 及⑽120b電性連接，以及形成封裝膠體14〇的過程亦同於 第一實施例，此處不再贅述。 、 由上述可知，基座110是由摻雜有導熱材料（及耐熱材料) 的塑膠材料以射出成型製程所製成，因此可較習知以純塑膠材 200947642 貝所製成之基座具有高導熱性。也就是說，發光二極體晶片 130在發光時所產生的熱能可以迅速地透過基座110散逸至發 光二極體封裝結構励外部，因而具有較佳的發光效率以及較 長的使用壽命。 雖然上述實施例係將導熱材料摻入塑膠材料中，以形成熱 傳導係數高的封裝結構之基座，但實際上本發明並不限定於 此。以下將配合圖式詳述本發明之另一實施例。 • 「第4A圖」至「第4B圖」繪示為本發明之發光二極體 封裝、、·σ構在第四實施例製造流程中的剖面示意圖。請參照「第 4Α圖」，雖然本實施例同樣是利用塑膠材料ιη與高導熱材料 113來製作具有容置槽412的基座41〇，但其與前述實施例的 相異處在於本實施例是先以塑膠材料lu為射出原料進行射 出成型，以形成具有凹槽402的塑膠層411，然後再利用高導 熱材料113而在凹槽402的表面上形成高導熱材料層413。在 此’表面上形成有尚導熱材料層413的凹槽402即為基座410 _ 的容置槽412。而本實施例所使用之塑膠材料in與高導熱材 料113例如是與前述實施例相同，此處不再贅述。 承上述，本實施例例如是以噴灑高導熱材料113之粉末的 方式形成高導熱材料層413。而且’雖然本實施例僅在凹槽402 的表面上形成高導熱材料層413 ’但高導熱材料層413也可以 同時形成於塑膠層411其他部位的表面上，本發明並不在此做 任何限制。 請參照「第4B圖」’在製成基座410之後，接著即是在 基座10上形成引腳120a與引腳120b，並將發光二極體晶片 11 200947642 130放置於容置槽412内，然後再將發光二極體晶片13〇的兩 端電極分別電性連接至引腳12〇a與引腳12〇b。之後，在基座 410上形成封裝膠體14〇,以覆蓋住放置有發光二極體晶片13〇 的谷置槽412及引腳120a與引腳12〇b電性連接至發光二極體 晶片130的一端。此時發光二極體封裝結構4〇〇的製程已大致 兀成。由於引腳120a、引聊120b、發光二極體晶# 13〇及封 ❿ 裝膠體U0的材質與形成方法均與前述實施例相同或相似，故 此處不再資述。 請繼續參照「第4B圖」，發光二極體封裝結構400與「第 1C圖」所繪示之航二極體封裝結構1〇㈣相異處在於發光 二極體封裝結構400的基座彻是由塑膠層411與高導熱材料 層413所構成’而發光二極體封裝結構廳的基座ιι〇則是摻 有轉熱材料m的歸材料U1以射出成型的方式所製成。 但基座410與基座110同樣具有良好的導熱性，因而能夠有效 地將發光二極體晶片13〇在發光時所產生的熱能傳導致發光 一極體封裝結構400外部。 綜上所述，本發明是以_材料及具高導紐的材料共同 組成封裝結構巾座’使得配置在基座之容置伽之 :==的熱能能夠透過基座而快速地散娜;裝: 構外。此可知，本發日柯料效地將累積在塊 熱能導出’進而改善發光二極體的發光效率及使用壽命。 雖然本發日骑财之實财私上，轉 以直接限定本發㈣利偏_。任何本發 中具有通常知識者，在不脫離本發明所揭露之精神和範圍丁的前 200947642 提下，可以在實施的形式上及細節上作些許之更動。本發明之 專利保護範圍，仍須以所附之申請專利範圍所界定者為準。 【圖式簡單說明】 ~ 第1A圖至第1C圖為本發明之發光二極體封&结構在第 一實施例中的製造流程剖面示意圖。 第2A圖及第2B圖為本發明之發光二極體封農結構在第 二實施例中的製造流程剖面示意圖。 ❹The present invention provides a dimming diode package structure including a susceptor, a light emitting diode chip, an encapsulant, and two leads. Among them, the fabric and the coffee bean, the virtual chip is placed in the accommodating groove. The pin is connected to the illuminating diode chip, and the package is provided on the pedestal (4) to cover the accommodating groove and the end of each pin electrically connected to the illuminating diode (9). This F-month provides a method for encapsulating a light-emitting diode, which first forms a two-pin and a susceptor having a receiving groove, wherein the pedestal is made of a plastic material, and each _ Read through. Then, the 1 2 diode crystals are placed in the base, and the phosphor diodes are connected. Thereafter, a package colloid is formed on the pedestal to cover the private trench and each of the (10) heterojunctions connected to one end of the light emitting diode chip. It can be seen from the above that the present invention forms a pedestal for encapsulating and ejecting a composite D material of a plastic kick material and a material having high thermal conductivity, so that the photo-polar body wafer disposed in the stomach of the pedestal ua The generated thermal energy can pass through the pedestal to encapsulate the exterior of the structure. In other words, the present invention can effectively derive the thermal energy in the tidy structure into the luminous efficiency 200947642 and the service life of the luminescent diode. [Embodiment] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings and the embodiments. Thus, the realization process of how to solve the technical problem and achieve the technical effect of the present invention can be fully understood and implemented. Fig. 1A to Fig. ic are schematic cross-sectional views showing the light emitting diode package structure of the present invention in the manufacturing process of the first embodiment. Referring to "Fig. 1A", first, the susceptor 110, the pin 12a and the pin 12b are formed. In this embodiment, the pedestal 11 〇 ' having the accommodating groove 112 is formed by using the plastic material 1U and the high thermal conductive material 113, and then the pins 12 〇 a and the pins 120 b ′ are formed on the pedestal 11 并One end of the pin i2〇a and the pin 12〇b is respectively located in the receiving groove 112 of the base U0. Among them, the material of the pin 12〇a and the pin 12% may be copper or its conductive material ’ and the force method may be a stamping process or a side process. In particular, the method of fabricating the susceptor 110 in the present embodiment is to first incorporate a high thermal conductive material 113 into the plastic material 111, and then use the plastic material 111 doped with the high thermal conductive material 113 as an injection material to pass through the injection molding process. To form the pedestal. Wherein, the weight ratio of the high thermal conductive material 113 to the plastic material ln is, for example, 疋 less than or equal to 10, and the plastic material iη used in the embodiment may be 1 omega dimethylamine (?0 plus her 3:^11^( 16, but not limited to this. The high thermal conductivity material 113 may be a nano copper powder, a copper oxide powder, a nano ceramic (such as aluminum trihalide (Al2〇3)) powder or a nano carbon material. It is worth mentioning that, in addition to the high thermal conductivity material 113 being incorporated into the plastic material to form the susceptor 110 to improve the thermal conductivity of the susceptor 11 (), in the present embodiment, 7 200947642 The heat-resistant material 115 is added to the plastic material 1U in order to increase the heat resistance of the susceptor 11. The material of the heat-resistant material 115 may be mineral fiber, but is not limited thereto. Please refer to "Fig. 1B" to form a pedestal. 11〇, after the pin 12〇a and the pin 120b, the LED chip 13 is placed in the accommodating groove 112, and the electrodes of the two ends of the illuminating body wafer 130 are electrically connected. To the pin 120a and the pin 120b, wherein the LED chip 13 can be red light a light emitting diode chip, a blue light emitting diode chip or a green light emitting diode chip, and the germanium is fixed in the receiving groove 112 of the base through, for example, a conductive adhesive (not shown). The conductive paste is used as a heat conducting medium between the LED chip 13 and the susceptor 110 to increase the heat transfer rate between the LED chip 13 and the pedestal 11 。. It should be noted that although In FIG. 1B, the LED chip 130 is electrically connected to the leads 12a and 120b via a wire bonding technique, but it is only one embodiment of the present invention, and is not In order to limit the present invention, it is known to those skilled in the art that the LED chip 13 can also be electrically connected to the leads 12A and 120b by flip chip bonding. Referring to the "1C figure", an encapsulant 14 is formed on the pedestal 11 〇 to cover the accommodating groove 112 on which the illuminating diode chip 3 is placed and the pin 12 〇a is electrically connected to the pin 120b. To one end of the LED chip 13〇, that is, the pin 120a and the pin 120b One end electrically connected to the LED chip 13 is exposed to the outside of the encapsulant 14 () so as to be electrically connected to other electronic devices (not shown). In other words, the LED 13 is transparent. The pins 200947642 120a and the pins 120b are electrically connected to other electronic devices. The package encapsulant 140 is used to protect the LED chip 130 placed in the accommodating groove 112 from external temperature and humidity. The effect of gas and noise, and it is formed, for example, by dispensing. In addition, the encapsulant 140 may also be doped with phosphor powder (not shown), so when the light emitted by the LED chip 130 is irradiated to the phosphor powder to excite visible light of another color, the light is emitted. The light emitted by the polar body chip 130 can be mixed with the light excited by the phosphor powder to produce a light mixing effect. In the above embodiment, the pins 12A and 12b are formed on the surface of the susceptor 110, but the present invention is not limited to the "2A" to "2B". A schematic cross-sectional view of the inventive LED package structure in the manufacturing process of the second embodiment. Please refer to the "2A", the same reference numerals as in the previous embodiment, and the materials and manufacturing methods of the components are the same or similar to those of the foregoing embodiments, and will not be described below. In this embodiment, after the pins 220a and the leads 220b are formed, the susceptor 110' is formed by embedding the plastic material 111 doped with φ and the heat conductive material n3 to partially bury the pins 220a and 220b. In the base 110. One ends of the 'pin 220a' and the pin 220b are respectively exposed in the receiving slots 112 of the susceptor no. The following is the embodiment of the present invention. After the pedestal 110, the leads 220a and the leads 220b are formed, the illuminating diode chip 130 is placed in the accommodating groove 112. The two end electrodes of the LED chip 13 are electrically connected to the pins 22A and 22b, respectively. In particular, the 疋' illuminating diode chip 130 is disposed on the pin 220a in the accommodating groove 112 9 200947642. Therefore, the thermal energy generated by the illuminating diode chip 130 during illuminating can be via thermal conductivity. In addition to the good susceptor 110, it can also be circulated to the outside of the package structure through the pin 220a. Here, the LED chip 130 is electrically connected to the lead 22〇b by a bonding technique, for example, and is electrically connected to the pin 220a by a flip chip bonding technique. The detailed process of subsequently forming the encapsulant 140 on the pedestal 11A is as described in the first embodiment and will not be described in detail herein. It should be noted that, in the third embodiment of the present invention, after forming the pin 220a and the pin 220b, the heat dissipating block 31A may be formed first, and then the pedestal 11'' may be formed by means of burying. The pin 22A, the pin 22〇b, and the heat slug 310 are partially buried in the susceptor u, as shown in FIG. 3A. Wherein the surface 312 of the heat slug 310 is exposed in the receiving groove I of the pedestal no, the surface 314 of the heat slug 310 is also exposed to the pedestal 11 〇. According to the above description, when the light-emitting diode wafer is placed, it is placed on the surface 312 of the heat-dissipating block 310 exposed in the accommodating groove 112, as shown in "Fig. 3B". In this way, the thermal energy generated by the light-emitting diode chip 13 when emitting light can be dissipated through the heat-conducting base, and can be directly dissipated to the outside of the package through the heat-dissipating block 310. . The material of the heat dissipation block 310 includes, but is not limited to, a metal material. Further, the process of electrically connecting the LEDs 130 to the leads 12A and 10b and the pads 10b and 120b is the same as that of the first embodiment, and will not be described herein. As can be seen from the above, the susceptor 110 is made of a plastic material doped with a heat conductive material (and a heat resistant material) by an injection molding process, so that the susceptor made of pure plastic material 200947642 can be highly thermally conductive. Sex. That is to say, the thermal energy generated by the LED chip 130 during the illuminating can be quickly dissipated through the susceptor 110 to the outside of the illuminating diode package structure, thereby having better luminous efficiency and a longer service life. Although the above embodiment incorporates a heat conductive material into a plastic material to form a susceptor of a package structure having a high heat transfer coefficient, the present invention is not limited thereto. Another embodiment of the present invention will be described in detail below with reference to the drawings. • "4A" to "4B" are schematic cross-sectional views showing the light-emitting diode package of the present invention and the ? structure in the manufacturing flow of the fourth embodiment. Please refer to the "4th drawing". Although the present embodiment also uses the plastic material ιη and the high thermal conductive material 113 to form the pedestal 41 具有 having the accommodating groove 412, the difference from the foregoing embodiment lies in the embodiment. First, the plastic material lu is used as the injection material for injection molding to form the plastic layer 411 having the groove 402, and then the high heat conductive material 113 is used to form the high heat conductive material layer 413 on the surface of the groove 402. The groove 402 on which the surface of the thermally conductive material 413 is formed is the accommodating groove 412 of the pedestal 410_. For example, the plastic material in and the high heat conductive material 113 used in the embodiment are the same as those in the foregoing embodiment, and are not described herein again. In view of the above, the present embodiment forms the layer 413 of highly thermally conductive material, for example, by spraying a powder of the highly thermally conductive material 113. Further, although the present embodiment forms the highly thermally conductive material layer 413' only on the surface of the recess 402, the highly thermally conductive material layer 413 may be simultaneously formed on the surface of other portions of the plastic layer 411, and the present invention is not limited thereto. Referring to FIG. 4B, after the pedestal 410 is formed, the pins 120a and 120b are formed on the susceptor 10, and the LED wafer 11 200947642 130 is placed in the accommodating groove 412. Then, the two end electrodes of the LED chip 13A are electrically connected to the pin 12〇a and the pin 12〇b, respectively. After that, the encapsulant 14 is formed on the pedestal 410 to cover the valley slot 412 and the pin 120a and the pin 12 〇b on which the LED chip 13 is placed and electrically connected to the LED chip 130. One end. At this time, the process of the LED package structure 4 is substantially completed. Since the materials and formation methods of the lead 120a, the chatter 120b, the light-emitting diode crystal #13〇, and the sealing body U0 are the same as or similar to those of the foregoing embodiment, they will not be described here. Please continue to refer to FIG. 4B. The difference between the LED package structure 400 and the aero-diode package structure shown in FIG. 1C is the base of the LED package structure 400. The plastic layer 411 and the high thermal conductive material layer 413 are formed, and the base ιι〇 of the light-emitting diode package structure hall is made by injection molding of the material U1 doped with the heat-converting material m. However, the susceptor 410 has good thermal conductivity as well as the susceptor 110, so that the thermal energy generated by the luminescence of the luminescent diode 13 can be effectively transmitted to the outside of the OLED package 400. In summary, the present invention is a combination of a material and a material with a high-conducting material to form a package structure holder, so that the heat disposed in the susceptor can be quickly transmitted through the susceptor; Packing: Outside the structure. It can be seen that the hair aging effect will be accumulated in the block thermal energy export to improve the luminous efficiency and service life of the light-emitting diode. Although this day's riding of the wealth of the real money privately, it is directly limited to the hair (four) profit bias _. Any person having ordinary knowledge in the present invention may make some changes in the form and details of the implementation without departing from the spirit and scope of the present invention. The scope of patent protection of the present invention is still to be determined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1A to Fig. 1C] are schematic cross-sectional views showing the manufacturing process of the light-emitting diode package & structure of the present invention in the first embodiment. 2A and 2B are schematic cross-sectional views showing the manufacturing process of the light-emitting diode sealing structure of the present invention in the second embodiment. ❹
第3A圖及第3B圖為本發明之發光二極 三實施财賴造餘勤示意I 體妓結構在第 第4A圖及第4B圖為本發明之發 四實施财的製造絲剖面示賴。㈣裝結構在第 【主要元件符號說明】 100 發光二極體封裝結構 110 基座 111 塑膠材料 112 容置槽 113 高導熱材料 115 耐熱材料 120a 引腳 120b 引腳 130 發光二極體晶片 140 封裝膠體 220a 引腳 220b 引腳 13 200947642 310 312 314 400 402 410 411 - 412 ⑩ 413 散熱塊 表面 表面 發光二極體封裝結構 凹槽 基座 塑膠層 容置槽 高導熱材料層3A and 3B are the light-emitting diodes of the present invention. The third embodiment of the present invention is based on the fourth embodiment of the present invention. (4) Mounting structure in the [Main component symbol description] 100 Light-emitting diode package structure 110 Base 111 Plastic material 112 Socket groove 113 High thermal conductivity material 115 Heat-resistant material 120a Pin 120b Pin 130 Light-emitting diode wafer 140 Package colloid 220a pin 220b pin 13 200947642 310 312 314 400 402 410 411 - 412 10 413 heat sink surface surface light emitting diode package structure groove base plastic layer receiving groove high thermal conductive material layer