TW201145474A - Heat dissipation device of electronic/photoelectric element - Google Patents

Heat dissipation device of electronic/photoelectric element Download PDF

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Publication number
TW201145474A
TW201145474A TW099118896A TW99118896A TW201145474A TW 201145474 A TW201145474 A TW 201145474A TW 099118896 A TW099118896 A TW 099118896A TW 99118896 A TW99118896 A TW 99118896A TW 201145474 A TW201145474 A TW 201145474A
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Taiwan
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electronic
heat
resin
transparent
component
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TW099118896A
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Chinese (zh)
Inventor
Wei-Han Wang
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Wei-Han Wang
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Priority to TW099118896A priority Critical patent/TW201145474A/en
Publication of TW201145474A publication Critical patent/TW201145474A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

In this invention, graphene or carbon nanotube is used with existing semiconductor elements, such as LED photoelectric elements or IC electronic elements, for the heat dissipation purpose, such that the advantages of high thermal transfer coefficient and uniform heat conduction of the graphene or carbon nanotube can be used to increase the overall heat dissipation effect, wherein binding adhesive is provided between the electronic/photoelectric element and a soaking block, and the binding adhesive comprises at least resin and graphene or resin and carbon nanotube, provided that the weight percentage of the graphene or carbon nanotube is less than or equal to 10 wt% of the resin. Alternatively, the active surface of the photoelectric element, such as the light emitting surface of an LED, is provided with a transparent heat dissipating package material which comprises at least resin and transparent graphene or resin and transparent carbon nanotube, provided that the weight percentage of the transparent graphene or transparent carbon nanotube is less than or equal to 10 wt% of the resin. Using the properties of the transparent graphene or carbon nanotube, such as high thermal transfer coefficient, uniform heat conduction, and transparency, this invention provides a heat dissipation pathway different from the conventional ones to greatly reduce heat dissipation parts required, satisfying the heat dissipation requirement of the product and achieving purpose of compact product.

Description

201145474 六、發明說明： 【發明所屬之技術領域】 本發月係有關—種電子元件或光電轉之 ，可將電子元彳i或光電元 保電子元件或光電元件之工作 【先前技術】 隨著對電子產品輕薄短小化之要人古 件及電子電路之半導 4度電子凡 裝產口之主令 4體曰曰片的丰導體封裝件，已逐漸成為封 量較Ϊ。!:而，由於該種半導體封裝件於運作時所產 右不即時將半導體晶片之熱量快速釋除，積 會咸重影響半導體晶片的電性功能與產品穩定度。 ^ ，為避免封裴件内部電路受到外界水塵污染，半導 ，晶片表面必須外覆一封裝膠體予以隔絕，並與以機械固 疋，惟構成該封裴膠體之封裝樹脂卻係一熱傳導性差之塑膠 ►材質，其熱傳導係數（thermal conductivity)僅 〇8w/m 是以’半導體晶片上舖^多數電路之主動面上產生之熱量無 法有效藉該封裝膠體傳遞到大氣外，而往往導致熱累積現象 產生，使W性能及使用壽命備受考驗。因此 =件之散熱效率，遂有於封物增設散熱件之Cl 如第一圖所示係為一種半導 二極體）之散熱結構，該結構係封裝件（例如尚功率發光 絕緣熱塑禮_部設有複數：二一絕緣熱塑體10為主體，該 取導線架101，該導線架自絕緣熱塑 201145474 艘10與電路板15作電性連接，而絕緣熱塑體ι〇並固設有一均 熱塊11，該均熱塊11上並用以容置發光二極體晶片12，該均 熱塊11與發光二極體晶片12間係利用一固晶膠131做接合，該 固晶膠含有如銀粉、銅粉或低溫焊料，具有導電、導熱及機 械固定之效果，再藉由一金屬導線將電性連接於導線架101 上，該絕緣熱塑體10上並設有封裝膠材層14，而該均熱塊u 下方亦藉由熱介面材料做為之第一接合層丨32與電路板15接 合，所以當發光二極體在運作時，該封裝膠材層14通常是具 有絕熱效果之樹脂，其熱導效果不佳，因此晶片產生之熱， 無法向上由樹脂傳導致而散發至空氣，只能從襄置於發光二 極體晶片12下方之固晶膠131傳導，並經由該均熱塊11完成散 熱’同時加裝一系列的Zener二極體’將電氣迴路與熱傳導路 徑隔離’以避免發光二極體晶片12所產生之工作熱能利用導 線架作為一導熱途徑，產生更大的熱阻作用，造成該發光二 極體晶片12無法在正常的工作溫度下運作，當然，亦可於電 路板15下方藉由熱介面材料做為之第二接合層133進一步結 合散熱片16，增加散熱效果。 傳統的發光二極體封裝的散熱路徑係依序由該發光二極 體晶片12下方之固晶膠131、均熱塊11、第一介面層132、電 路板15、第二介面層133以及散熱片16將發光二極體晶片12 產生之作用熱散發至空氣；惟，各介面層之熱傳導係數較小， 例如銀膠僅為10-25 w/m-K，一般是以熱傳導係數用以評估材 料的導熱特性，當熱傳導係數值越大，其散熱導熱效果越佳； 反之，熱傳導係數值越小，其散熱導熱效果越差，其中固晶 膠的熱傳導係數值最低，其所產生的界面溫度最高，也是整 201145474 個發光二極體或1C封裝散熱路徑的瓶頸。 【發明内容】 本發明之主要目的即在提供一種電子/光電元件之散熱 裝置，可應用於電子元件或光電元件中，該電子元件可以為 半導體元件，該光電元件可以為發光二極體晶片，可降低電 子元件或光電元件之工作熱源，以確保電子/光電元件之工作 效能及提升信賴度之散熱裝置。 •為達上揭目的，本發明中電子/光電元件與均熱塊間設有 固晶膠與熱介面材枓，該固晶膠與熱介面材料至少包含有樹 脂以及石墨烯（graphene)或樹脂以及奈米碳管，而該石墨烯 或奈米碳管之重量百分比係小於或等於樹脂之10 wt%，或 者，該光電元件作用表面（例如發光二極體之出光表面）設有 透明散熱封裝材料，該透明散熱封裝材料至少包含有樹脂以 及透明石墨烯（graphene)或樹脂以及透明奈米碳管，而該透 明石墨烯或透明奈米碳管之重量百分比係小於或等於樹脂之 籲 10 wt°/〇，藉由石墨烯或奈米碳管具有高熱傳導係數（約 4600-5300 w/m-K)以及導熱均勻之特點，以提高整體散熱裝 置之散熱效果。 【實施方式】 本發明之特點，可參閱本案圖式及實施例之詳細說明而 獲得清楚地瞭解。 本發明「電子/光電元件之散熱裝置」，本發明之散熱裝 置係可應用於半導體元件中，其中一般所知半導體元件係包 201145474 元：及電子元件，如第二圖所示之實施例中，係為 疋之散熱裝置，該光電元件可以為發光二極體晶 片’如圖所示之實施例中’係為傳統的晶片封裝方式配合傳 統的散熱機構，再搭配本發明之散纽方，該電光電元件可 以為發光二極體20，該發光二極體2〇係設有一絕緣熱塑體 2；1 ’該絕緣熱_ 21内部設有複數導線架22，並以導線架 22自絕緣熱㈣21與電路板電性接觸，該均熱塊3()則設於 該絕緣熱㈣21 ’該均熱塊3〇係經由連續式沖壓料帶射出 後，將其包覆於絕緣熱塑體21内，使該均熱塊3Q之頂面曝 露於絕緣熱塑體31内，並用以容置發光二極體晶片23,該 發光二極體晶片23與導線架22間以導線24構成電性連接。 本發明之重點在於：該發光二極體晶片23與均熱塊3〇 間設有固晶膠41(亦即本發明之散熱配方），該固晶膠41至 少包含有樹脂以及石墨烯（graphene)或樹脂以及奈米碳管， 該樹脂可以為矽膠（Silicone)、環氧樹脂（ep〇xy)或聚碳酸酯 (PC),而該石墨烯或奈米碳管之重量百分比係小於或等於樹 脂之10wt%，藉由石墨烯或奈米碳管具有熱傳導係數高（約 4600-5300 w/m-K)以及導熱均勻之特點，以提高整體散熱裝 置之散熱效果’使該發光二極體晶片23之工作熱源得以藉由 該固晶膠41傳遞至均熱塊3〇 ;當然，該均熱塊30進一步藉 由一熱介面材料42接合固定於電路板50上，其中該熱介面 材料42同樣至少包含有樹脂以及石墨婦（graphene)或樹脂 以及奈米碳管’該樹脂可以為矽膠（Siiicone)、環氧樹脂 (epoxy)或聚碳酸酯（pc)，而該石墨烯或奈米碳管之重量百分 比係小於或等於樹脂之l〇wt%，而該電路板50亦進一步藉由 201145474 該熱介面材料42接合固定於散熱片60上’利用高散熱表面 積增加其散熱效果。 如第三圖所示係為本發明之第二實施例’係為傳統的晶 片封裝方式配合傳統的散熱機構，再搭配本發明的散熱路 徑，該電子/光電元件作用表面設有透明散熱封裝材料，如圖 所示之實施例中係於發光二極體之出光表面設有透明散熱封 裝材料25，該透明散熱封裝材料25至少包含有樹脂以及透 明石墨烯（graphene)或樹脂以及透明奈米碳管，該樹脂可以 是透明的封裝材料’如環氧樹脂或矽膠，而該透明石墨烯或 透明奈米碳管之重量百分比係小於或等於樹脂之1〇 wt%，其 中該透明石墨烯或透明奈米碳管可以直接合成或經由分離 (sorting/separation)而得，使其不會影響該發光二極體晶 片23正常運作’該發光二極體晶片23設有垂直相對之第一、 第二電極206、207 ’該發光二極體晶片之第一電極206直接 電性連接於一導線架22上，而該發光二極體晶片之第二電極 207則透過該導線24與導線架22構成電性連接，該第一電 極206與該導線架22上並進一步設有絕緣層26，以保護分 離該第一、第二電極206、207，再於絕緣熱塑體21上覆蓋 透明散熱封裴材料25，且該透明散熱封裝材料25可進一步 包含有螢光粉’可使該發光二極體晶片23經由混光而得到預 期光色，且發光二極體晶片23之工作熱源可直接由上方之透 明散熱封裝材料25散去（亦即本發明的散熱路徑）；當然， 亦可同時結合固晶膠41，使該發光二極體晶片23之工作熱 源’可使用如第二圖的實施例，可同時由上方透明散熱封裝 材料25以及下方固晶膠41散去，增加其散熱效果，以確保 201145474 該發光二極體之使用壽命。 如第四圖所示係為本發明之第三實施例，係為傳統覆晶 封裝方式搭配本發明的散熱機構（新的散熱路徑），該光電元 件可以為發光二極體2〇，該發光二極體20設有一透明基板 201’ 、一活性層203形成於該第一電性半導層202上、一第 二電性半導層204形成於該活性層203上、一接觸層205形 成於該第二電性半導層204上、以及第一、第二電極206、 207,形成於該接觸層205上，用以直接接合於一基座208(可 以為石夕基板）上’該基座208表面預定區域内分別形成有一銲 墊209 ’用以覆晶接合於第一、第二電極2〇6、2〇7而形成電 性相連接，而該銲墊209與第一、第二電極206、207及其覆 晶接合處進一步設有絕緣層26,以保護分離之第一、第二電 極206、207 ’再於該基座208表面相對於該光電元件作用表 面（亦即發光二極體之出光表面）設有上述之透明散熱封裝材 料25，提供發光二極體—散熱路徑，並藉由透明散熱封 裝材料25中石墨烯或奈米碳管具有熱傳導係數高以及導熱 均勻之特點，以提高整體散熱裝置之散熱效果；當然，上述 第三、第四實施例中，該透明散熱封裝材料可進一步包含有 螢光粉，可使該發光二極體經由混光而得到預期光色。 上述光電元件可以為其它固態光源，如有機發光二極體 (OLED)、雷射等。亦可以應用在前投式投影機、背投式投影 機、微型投影機等。以微型投影機為例，目前微型投影機或 手機式（内含微型投影機）是以高流明數發光二極體為主要光 源’但有散熱的問題’且因為微型化，不能使用現有的散熱 解決方案。本發明實施例為最適當的微型化散祕決方案。 201145474 如第五圖所科、為本發明之第四實 :封裝的1C晶片散熱機構，再搭配上^ 路徑，該電子70件可以為1C電子元件71，該IC電子元件71 係設置於-封裝載板72上，該IC電子元件71設有垂直相對 之第一、第二電極m、702，該第一電極7〇1直接電性連接 於封裝載板72上’而該第二電極7()2則透過該導線24與封 裝載板72構成電性連接’該第一電極7〇1與該封裝載板72 上並進-步設有絕緣層26，以保護分離該第―、第二電極 70W02,接者再以散熱封裝材料27將1(：電子元件η包覆， 以得到-晶片封裝單元；其中，該散熱封裝材料27至少包含 有樹脂m_(graphene)或樹如及奈㈣管，而該石 墨婦或奈米碳管之重量百分比係小於或等於樹脂之10 wt%， 藉由散熱封裝材料27可提供-個新的散熱路徑，可將IC電 子元件71之工作熱源朝向上方散去。 ㈣為本發明之第五實施例，係為傳統覆晶 封裝方式減本發明的散熱機構（新的散熱路徑），該電子元 t=IC電子元件71，㈣電子元件Ή係藉由覆晶方 式；i 208(可以為秒基板）上’該基座2G8表面預定區 域内分別形成有-銲塾2G9,用以覆晶接合於IC電子元件^ 而形成電性相連接，而該銲塾咖與IC電子料71覆晶接 合處進-步設有絕緣層26，以保護分離各輝墊m，再^ 基座208表面相對於該電子元件表面設有上述之散孰封裝= 料二TIC電子元件71 一散熱路徑，並藉由細装： 料27中石墨稀或奈米碳管具有熱傳導係數高以及導 之特點，以提高整體散熱裝置之散熱效果。 201145474 本發明相較於習有結構係具有下列優點： 1、 於固晶膠或熱介面材料中增加石墨烯或奈米碳管，不 僅可構成電子元件與均熱塊之接合，亦可提供一熱傳導係數 高、導熱均勻，以及可產生較低界面溫度，進而提升散熱效 果。 2、 於LED封裝材料中增加奈米等級之石墨烯或奈米碳 管，其尺寸小於可見光波長，具有透明性，不會影響該發光 二極體正常發光運作，亦可兼具有熱傳導係數高、導熱均勻 以及接觸熱阻較低之特性。 本發明之技術内容及技術特點已揭示如上，然而熟悉本 項技術之人士仍可能基於本發明之揭示而作各種不背離本案 發明精神之替換及修飾。因此，本發明之保護範圍應不限於 實施例所揭示者，而應包括各種不背離本發明之替換及修 飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 第一圖為一般半導體封裝件散熱結構之結構示意圖。 第二圖為本發明中光電元件之散熱裝置第一實施例之結 構示意圖。 第三圖為本發明中光電元件之散熱裝置第二實施例之結 構不意圖。 第四圖為本發明中光電元件之散熱裝置第三實施例之結 構示意圖。 第五圖為本發明中電子元件之散熱裝置第四實施例之結 構示意圖。 201145474 第六圖為本發明中電子元件之散熱裝置第五實施例之結 構示意圖。 導線架22 發光二極體晶片23 導線24 透明散熱封裝材料25 絕緣層26 散熱封裝材料27 均熱塊30 固晶膠41 熱介面材料42 電路板50 散熱片60 1C電子元件71 封裝載板72 焊線73 【主要元件代表符號說明】 絕緣熱塑體1C 電極導線架101 均熱塊11 晶片12 •第-介面層131 第二介面層132 第三介面層133 封裝膠材層14 電路板15 散熱片16 發光二極體20 基板201 • 第一電性半導層202 活性層203 第二電性半導層204 接觸層205 第一電極206 第二電極207 基座208 銲墊209 絕緣熱塑體21 11201145474 VI. Description of the invention: [Technical field to which the invention pertains] This month is related to the operation of electronic components or optoelectronics, which can work with electronic components or optoelectronic components to protect electronic components or optoelectronic components. [Prior Art] The lighter and shorter electronic products of the dignitaries and electronic circuits of the semi-conductor 4 degrees of electronic products, the main reason for the 4 body 的 的 丰 导体 导体 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰 丰!: However, since the semiconductor package is produced during operation, the heat of the semiconductor wafer is not immediately released, and the salty weight affects the electrical function and product stability of the semiconductor wafer. ^, in order to avoid the internal circuit of the sealing member is polluted by external water and dust, the surface of the wafer must be covered with a package of colloid to be isolated and mechanically fixed, but the encapsulating resin constituting the sealing colloid is poor in thermal conductivity. The material of the plastic ► material has a thermal conductivity of only 8w/m. The heat generated on the active surface of the majority of the circuit on the semiconductor wafer cannot be effectively transferred to the atmosphere by the encapsulant, which often leads to heat accumulation. The phenomenon is produced, and the performance and service life of W are tested. Therefore, the heat dissipation efficiency of the component is not limited to the heat dissipation structure of the heat sink of the package as shown in the first figure. The structure is a package (for example, the power-emitting insulation thermal insulation ceremony) The _ part is provided with a plurality of: the insulating thermoplastic body 10 is the main body, and the lead frame 101 is taken. The lead frame is electrically connected to the circuit board 15 from the insulating thermoplastic 201145474, and the insulating thermoplastic body is 〇 A heat-generating block 11 is disposed on the heat-generating block 11 for accommodating the light-emitting diode chip 12, and the heat-generating block 11 and the light-emitting diode wafer 12 are bonded by a die bonding glue 131. The glue contains, for example, silver powder, copper powder or low-temperature solder, and has the effects of conduction, heat conduction and mechanical fixation, and is electrically connected to the lead frame 101 by a metal wire, and the insulating thermoplastic body 10 is provided with a package adhesive. The layer 14 is also bonded to the circuit board 15 by the thermal interface material as the first bonding layer 32, so that the package adhesive layer 14 usually has a function when the LED is in operation. The heat-insulating resin has a poor thermal conductivity, so the heat generated by the wafer It can't be emitted to the air by the resin, but can only be transmitted from the solid glue 131 placed under the LED chip 12, and the heat is dissipated through the heat equalizer block 11 while adding a series of Zener diodes. The body 'separates the electrical circuit from the heat conduction path' to prevent the working heat generated by the LED chip 12 from using the lead frame as a heat conduction path, resulting in greater thermal resistance, causing the LED chip 12 to fail to function normally. Working at the operating temperature, of course, the heat sink 16 can be further combined with the heat sink 16 by the thermal interface material under the circuit board 15 to increase the heat dissipation effect. The heat dissipation path of the conventional LED package is The function of the light-emitting diode wafer 12 is generated by the solid crystal glue 131, the heat equalizing block 11, the first interface layer 132, the circuit board 15, the second interface layer 133 and the heat sink 16 under the light-emitting diode chip 12. Heat is radiated to the air; however, the thermal conductivity of each interface layer is small, for example, silver glue is only 10-25 w/mK, which is generally used to evaluate the thermal conductivity of the material, when the thermal conduction system The larger the value, the better the heat conduction and heat conduction effect; on the contrary, the smaller the heat transfer coefficient value is, the worse the heat conduction and heat conduction effect is. The solid heat transfer coefficient of the solid crystal glue is the lowest, and the interface temperature generated by it is the highest, which is also the whole 201145474 light. A bottleneck of a heat dissipation path of a polar body or a 1C package. SUMMARY OF THE INVENTION The main object of the present invention is to provide a heat sink for an electronic/photoelectric element, which can be applied to an electronic component or a photovoltaic component, which can be a semiconductor component. The optoelectronic component can be a light-emitting diode chip, which can reduce the working heat source of the electronic component or the optoelectronic component, to ensure the working efficiency of the electronic/optical component and improve the reliability of the heat sink. A solid crystal glue and a thermal interface material are disposed between the photovoltaic element and the soaking block, and the die bonding adhesive and the thermal interface material comprise at least a resin and graphene or a resin and a carbon nanotube, and the graphene or naphthalene The weight percentage of the carbon nanotubes is less than or equal to 10 wt% of the resin, or the surface of the photovoltaic element (for example, a light-emitting diode) The light-emitting surface is provided with a transparent heat-dissipating encapsulating material containing at least a resin and a transparent graphene or resin and a transparent carbon nanotube, and the weight percentage of the transparent graphene or the transparent carbon nanotube It is less than or equal to the resin of 10 wt ° / 〇, by graphene or carbon nanotubes with high thermal conductivity (about 4600-5300 w / mK) and uniform heat transfer characteristics to improve the heat dissipation of the overall heat sink. [Embodiment] The features of the present invention can be clearly understood by referring to the drawings and the detailed description of the embodiments. In the present invention, the heat sink of the present invention can be applied to a semiconductor device, wherein the semiconductor component is generally known as 201145474: and the electronic component, as in the embodiment shown in the second figure. The heat-dissipating device is a heat-dissipating device, and the photoelectric element can be a light-emitting diode chip. In the embodiment shown in the figure, the conventional chip-packing method is combined with a conventional heat-dissipating mechanism, and the sunshade of the present invention is matched. The electro-optical component can be a light-emitting diode 20, and the light-emitting diode 2 is provided with an insulating thermoplastic body 2; 1 'the insulating heat_ 21 is internally provided with a plurality of lead frames 22, and is insulated by the lead frame 22 The heat (four) 21 is in electrical contact with the circuit board, and the heat equalizing block 3 () is disposed on the insulating heat (four) 21 '. The heat equalizing block 3 is sprayed through the continuous stamping strip and coated on the insulating thermoplastic body 21 The top surface of the heat equalizing block 3Q is exposed to the insulating thermoplastic body 31, and is used for accommodating the LED chip 23. The LED assembly 23 and the lead frame 22 are electrically connected by wires 24. . The focus of the present invention is that a solid crystal glue 41 (that is, a heat dissipation formula of the present invention) is disposed between the light-emitting diode chip 23 and the soaking block 3, and the solid glue 41 contains at least a resin and graphene (graphene). Or a resin and a carbon nanotube, the resin may be Silicone, epoxy (ep〇xy) or polycarbonate (PC), and the weight percentage of the graphene or carbon nanotube is less than or equal to 10% by weight of the resin, the graphene or carbon nanotube has a high thermal conductivity (about 4600-5300 w/mK) and uniform heat conduction to improve the heat dissipation effect of the overall heat sink device. The working heat source can be transferred to the heat equalizing block 3 by the die bonding glue 41; of course, the heat equalizing block 30 is further bonded and fixed to the circuit board 50 by a thermal interface material 42, wherein the heat interface material 42 is also at least Containing resin and graphite or graphene and carbon nanotubes, the resin may be Siicone, epoxy or polycarbonate, and the graphene or carbon nanotube The weight percentage is less than or equal to the resin wt%, but also the circuit board 50 is further engaged by the thermal interface material 201 145 474 42 fixed to the heat sink 60 'with a high surface area to increase its heat dissipation effect. As shown in the third figure, the second embodiment of the present invention is a conventional chip packaging method combined with a conventional heat dissipation mechanism, and is coupled with the heat dissipation path of the present invention. The surface of the electronic/photoelectric element is provided with a transparent heat dissipation packaging material. In the embodiment shown in the figure, the light-emitting surface of the light-emitting diode is provided with a transparent heat-dissipating sealing material 25 containing at least resin and transparent graphene or resin and transparent nano carbon. Tube, the resin may be a transparent encapsulating material such as epoxy resin or silicone, and the weight percentage of the transparent graphene or transparent carbon nanotube is less than or equal to 1% by weight of the resin, wherein the transparent graphene or transparent The carbon nanotubes can be directly synthesized or obtained by sorting/separation so that the light-emitting diode chip 23 does not normally operate. The light-emitting diode chip 23 is vertically opposed to the first and second. The electrode 206, 207' the first electrode 206 of the LED chip is directly electrically connected to a lead frame 22, and the second electrode 207 of the LED chip is transparent. The wire 24 is electrically connected to the lead frame 22. The first electrode 206 and the lead frame 22 are further provided with an insulating layer 26 to protect the first and second electrodes 206 and 207, and then insulate the thermoplastic. The transparent heat-dissipating sealing material 25 is covered on the body 21, and the transparent heat-dissipating sealing material 25 can further comprise a fluorescent powder. The light-emitting diode wafer 23 can be mixed to obtain a desired light color, and the light-emitting diode chip is obtained. The working heat source of 23 can be directly dispersed by the transparent heat-dissipating encapsulating material 25 (that is, the heat-dissipating path of the present invention); of course, the solid-state adhesive 41 can also be combined to make the working heat source of the light-emitting diode chip 23 By using the embodiment as shown in the second figure, the transparent heat-dissipating encapsulating material 25 and the lower solid-state adhesive 41 can be dissipated at the same time to increase the heat dissipation effect to ensure the service life of the LED light-emitting diode 201145474. As shown in the fourth figure, the third embodiment of the present invention is a conventional flip chip package with the heat dissipation mechanism (new heat dissipation path) of the present invention, and the photoelectric element may be a light emitting diode 2? The diode 20 is provided with a transparent substrate 201 ′, an active layer 203 is formed on the first electrical semiconductive layer 202 , a second electrical semiconductive layer 204 is formed on the active layer 203 , and a contact layer 205 is formed. The second and second electrodes 206 and 207 are formed on the contact layer 205 for directly bonding to a pedestal 208 (which may be a slab substrate). A pad 209' is formed in a predetermined area on the surface of the pedestal 208 for flip-chip bonding to the first and second electrodes 2〇6, 2〇7 to form an electrical connection, and the pad 209 is first and The two electrodes 206, 207 and their flip-chip joints are further provided with an insulating layer 26 to protect the separated first and second electrodes 206, 207' from the surface of the susceptor 208 relative to the surface of the photovoltaic element (ie, illuminate The light-emitting surface of the diode is provided with the above transparent heat-dissipating sealing material 25, provided Photodiode-heat dissipation path, and the graphene or carbon nanotube in the transparent heat-dissipating encapsulating material 25 has the characteristics of high heat transfer coefficient and uniform heat conduction to improve the heat dissipation effect of the overall heat dissipating device; of course, the third and fourth In an embodiment, the transparent heat dissipation packaging material may further comprise a phosphor powder, and the light emitting diode may be mixed to obtain a desired light color. The above photovoltaic elements may be other solid state light sources such as organic light emitting diodes (OLEDs), lasers and the like. It can also be applied to front projection projectors, rear projection projectors, pico projectors, etc. Taking a pico projector as an example, at present, a micro projector or a mobile phone (including a micro projector) uses a high lumen light emitting diode as a main light source 'but has a problem of heat dissipation' and because of miniaturization, it is impossible to use existing heat dissipation. solution. The embodiment of the invention is the most appropriate miniaturization solution. 201145474, as shown in the fifth figure, is the fourth embodiment of the invention: the packaged 1C wafer heat dissipation mechanism is matched with the upper path, and the electronic component 70 can be a 1C electronic component 71, and the IC electronic component 71 is disposed in the package. On the carrier board 72, the IC electronic component 71 is provided with first and second electrodes m and 702 which are vertically opposite to each other. The first electrode 〇1 is directly electrically connected to the package carrier 72 and the second electrode 7 ( 2 is electrically connected to the package carrier 72 through the wire 24. The first electrode 7〇1 and the package carrier 72 are further provided with an insulating layer 26 to protect the first and second electrodes. 70W02, the package further encapsulates 1 (the electronic component η with the heat dissipation encapsulation material 27 to obtain a chip package unit; wherein the heat dissipation encapsulation material 27 at least contains a resin m_(graphene) or a tree such as a nemesis (four) tube. The weight percentage of the graphite or carbon nanotubes is less than or equal to 10 wt% of the resin, and the heat dissipation encapsulating material 27 can provide a new heat dissipation path, and the working heat source of the IC electronic component 71 can be dispersed upward. (4) The fifth embodiment of the present invention is a conventional flip chip package The heat dissipation mechanism (new heat dissipation path) of the present invention is reduced, the electron element t=IC electronic component 71, (4) the electronic component system is flip-chip mode; i 208 (may be a second substrate) on the surface of the pedestal 2G8 a solder bump 2G9 is formed in the region for flip-chip bonding to the IC electronic component to form an electrical phase connection, and the solder bump and the IC chip 71 are electrically connected to each other, and an insulating layer 26 is further disposed. Protecting and separating the mats m, and then the surface of the susceptor 208 is provided with a heat dissipation path of the above-mentioned diverging package = material TIC electronic component 71 with respect to the surface of the electronic component, and by fine-tuning: the graphite in the material 27 is thin or The carbon nanotubes have the characteristics of high heat transfer coefficient and conduction to improve the heat dissipation effect of the overall heat dissipating device. 201145474 The invention has the following advantages compared with the conventional structure: 1. Adding graphene to the solid crystal glue or the thermal interface material Or carbon nanotubes, not only can form the joint of the electronic components and the soaking block, but also provide a high thermal conductivity, uniform heat conduction, and can produce a lower interface temperature, thereby improving the heat dissipation effect. 2. Adding to the LED packaging material Nano, etc. Graphene or carbon nanotubes, which have a size smaller than the wavelength of visible light, have transparency, do not affect the normal light-emitting operation of the light-emitting diode, and have the characteristics of high heat transfer coefficient, uniform heat conduction, and low contact thermal resistance. The technical content and technical features of the present invention have been disclosed as above, but those skilled in the art can still make various substitutions and modifications without departing from the spirit of the present invention based on the disclosure of the present invention. Therefore, the scope of protection of the present invention should not be limited to The present invention is intended to cover various modifications and changes without departing from the scope of the invention, and is covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic structural view of a heat dissipation structure of a general semiconductor package. The second figure is a schematic view showing the structure of the first embodiment of the heat dissipating device for the photovoltaic element of the present invention. The third figure is not intended to be a structure of the second embodiment of the heat sink of the photovoltaic element of the present invention. The fourth figure is a schematic view showing the structure of the third embodiment of the heat dissipating device for the photovoltaic element of the present invention. Fig. 5 is a view showing the configuration of a fourth embodiment of the heat sink of the electronic component of the present invention. 201145474 Fig. 6 is a schematic view showing the structure of a fifth embodiment of the heat dissipating device for electronic components of the present invention. Lead frame 22 Light-emitting diode chip 23 Conductor 24 Transparent heat-dissipating packaging material 25 Insulation layer 26 Heat-dissipating packaging material 27 Soaking block 30 Solid-state adhesive 41 Thermal interface material 42 Circuit board 50 Heat sink 60 1C Electronic component 71 Package carrier 72 Soldering Line 73 [Description of main component representative symbols] Insulation thermoplastic body 1C Electrode lead frame 101 Homogenization block 11 Wafer 12 • First-interface layer 131 Second interface layer 132 Third interface layer 133 Package adhesive layer 14 Circuit board 15 Heat sink 16 Light Emitting Diode 20 Substrate 201 • First Electrical Conductive Layer 202 Active Layer 203 Second Electrical Conductive Layer 204 Contact Layer 205 First Electrode 206 Second Electrode 207 Base 208 Solder Pad 209 Insulation Thermoplastic Body 21 11

Claims (1)

201145474 七、申請專利範圍： 1、 一種電子/光電元件之散熱裴置，該電子元件與均熱 塊間設有固晶膠，該固晶膠至少包含有樹脂以及石墨烯 (graphene)或樹脂以及奈米碳管，而該石墨烯或奈米碳管之 重量百分比係小於或等於樹脂之1 〇 。 2、 如請求項丨所述電子/光電元件之散熱裝置，其中， 該均熱塊進一步藉由〆熱介面材料接合固定於電路板上。 3、 如請求項2所述電子/光電元件之散熱裝置，其中， 該電路板進一步藉由—熱介面材料接合固定於散熱片上。 籲 4、 如請求項2或3所述電子/光電元件之散熱裝置，其 中，該熱介面材料至少包3有樹脂以及石墨稀（graphene)或 樹脂以及奈米碳管，而該石墨烯或奈米碳管之重量百分比係 小於或等於樹脂之1〇 rt%。 5、 如請求項ι、2或3所述電子/光電元件之散熱裝置， 其中’該光電元件可以為發光二極體，該發光二極體係設有 一絕緣熱塑體，該絕緣熱塑體内部設有複數電極導線架，各 導線架自絕緣熱塑體内部向外延伸，該均熱塊則設於該絕緣籲 熱塑體，該均熱塊之頂面係顯露於絕緣熱塑體内，該均熱塊 上並用以容置發光二極體晶片，該發光二極體晶片其中一電 極與導線架構成電性連接，而該發光二極體晶片另一電極則 直接電性連接於另一導線架上。 6、 如請求項5所述電子/光電元件之散熱裝置，其中， 該電子/光電元件作用表面設有透明散熱封裝材料，該透明散 熱封裝材料至少包含有樹脂以及透明石墨烯（graphene)，而 該透明石墨烯之重量百分比係小於或等於樹脂之1〇 wt%。 12 201145474 7、 如請求項6所述電子/光電元件之散熱裝置，其中， 該另一導線架上並進一步設有絕緣層’❶ 8、 如請求項6所述電子/光電元件之散熱裝置，其中， 該樹脂可以為矽膠（Silicone)、環氧樹脂（ep〇xy)、聚碳酸酯 (PC)或晶圓級封裝所使用之光阻劑。 9、 一種電子/光電元件之散熱裝置，該電子/光電元件作 用表面設有透明散熱封裝材料’該透明散熱封裝材料至少包 含有樹脂以及透明石墨烯（graphene)或樹脂以及透明奈米碳 鲁管，而該透明石墨稀成透明奈米碳管之重量百分比係小於或 等於樹脂之10 wt%。 10、 如請求項9所述電子/光電元件之散熱裝置’其中’ 該電子/光電元件可以為發光二極體，該發光二極體係設有一 絕緣熱塑體，該絕緣熱槊體内部設有複數電極導線架’各導 線架自絕緣熱塑體内鄯向外延伸，該絕緣熱塑體並設有一均 熱塊，該均熱塊之頂面孫顯露於絕緣熱塑體内’該均熱塊上 並用以容置發光二極雜晶片，該發光二極體晶片與導線架間 •並設有導線，且該導線於該發光二極體晶片與導線架之接觸 面上進一步設有絕緣層° 11、 如請求項1〇所述電子/光電元件之散熱裝置’其 中，該電子/光電元件4以為發光二極體，該發光二極體設有 一透明基板、一第一電揀半導層形成於該透明基板上、一活 性層形成於該第一電性半導層上、一第二電性半導層形成於 該活性層上，一接觸層#成於該第二電性半導層上、以及第 一、第二電極，形成於该接觸層上’用以直接接合於一基座 上。 13 201145474 求項^所述電子/光電元件之散熱裝置，其 二座:面 :緣:罐與第…第二電極及其覆晶接合處進：有 13、如請求項9、1〇、u或u 熱裝置，其中，該樹脂可以^電元件之散 熱裝透明石_可^為HI子級先h件之散 15、 如凊求項9、1〇、u 熱裝置，其中，該透明夺米心2所述電子/光電元件之散 16、 -種電子/光電元件之::為奈米等雷級。 表面設有散熱封裝材料，該散熱子/光電元件 及石墨烯（graphene)或樹脂以及=裝材枓至少包含有樹脂以 米碳管之重量百分比係小於 二米碳管，而該石墨烯或奈 "、如請求項以所述之1〇㈣。 中，該電子元件可以為1(：電/先電元件之散熱裝置，其 於一封裝載板上，並設有焊線:件，該IC電子元件係設置 電性連接，而該散熱封裴材成1C電子元件與封裝載板之 18、如請求項16所電子元件包覆。 中，該電子元件可以為Ic 光電元件之散熱裝置，其 覆晶方式於一基座上，該千疋件，該1C電子元件係藉由 對於該電子元件作用表S上熱封装材料則設於該基座表面相201145474 VII. Patent application scope: 1. A heat dissipating device for electronic/photoelectric components, wherein the electronic component and the soaking block are provided with a solid crystal glue, the solid crystal glue containing at least a resin and graphene or resin and The carbon nanotubes, and the weight percentage of the graphene or carbon nanotubes is less than or equal to 1 树脂 of the resin. 2. The heat sink of the electronic/photovoltaic component of claim 3, wherein the heat equalizing block is further bonded to the circuit board by bonding the thermal interface material. 3. The heat sink of the electronic/optoelectronic component of claim 2, wherein the circuit board is further bonded to the heat sink by a bonding of a thermal interface material. The heat dissipating device of the electronic/photoelectric element according to claim 2 or 3, wherein the thermal interface material comprises at least 3 resin and graphite or resin and a carbon nanotube, and the graphene or naphthalene The weight percentage of the carbon nanotubes is less than or equal to 1 〇 rt% of the resin. 5. The heat sink of the electronic/optoelectronic component of claim 1, wherein the light component is a light emitting diode, and the light emitting diode system is provided with an insulating thermoplastic body, the insulating thermoplastic body interior a plurality of electrode lead frames are disposed, the lead frames extend outward from the inside of the insulating thermoplastic body, and the heat equalizing block is disposed on the insulating thermoplastic body, and the top surface of the heat equalizing block is exposed in the insulating thermoplastic body. The heat-generating block is configured to receive a light-emitting diode chip, wherein one of the electrodes of the light-emitting diode chip is electrically connected to the lead frame, and the other electrode of the light-emitting diode chip is directly electrically connected to the other On the lead frame. 6. The heat sink of the electronic/photoelectric component of claim 5, wherein the active surface of the electronic/photoelectric component is provided with a transparent heat dissipation encapsulant comprising at least a resin and a transparent graphene. The weight percentage of the transparent graphene is less than or equal to 1% by weight of the resin. The heat dissipation device of the electronic/optoelectronic component according to claim 6, wherein the other lead frame is further provided with an insulating layer ❶ 8. The heat dissipation device of the electronic/photoelectric component according to claim 6 The resin may be a photoresist used in silicone, epoxy (ep〇xy), polycarbonate (PC) or wafer level packaging. 9. A heat dissipating device for an electronic/optoelectronic component, wherein the surface of the electronic/photovoltaic component is provided with a transparent heat dissipating encapsulating material. The transparent heat dissipating encapsulating material comprises at least a resin and a transparent graphene or resin and a transparent nanocarbon tube. And the weight percentage of the transparent graphite thin transparent carbon nanotubes is less than or equal to 10 wt% of the resin. 10. The heat sink of the electronic/optoelectronic component of claim 9, wherein the electronic/photoelectric component can be a light emitting diode, the light emitting diode system is provided with an insulating thermoplastic body, and the insulating heat body is internally provided. The plurality of lead frames of the plurality of lead wires extend outward from the insulating thermoplastic body, and the insulating thermoplastic body is provided with a soaking block, and the top surface of the soaking block is exposed in the insulating thermoplastic body. And a light-emitting diode chip is disposed on the block, and the wire is disposed between the light-emitting diode chip and the lead frame, and the wire is further provided with an insulating layer on the contact surface between the light-emitting diode chip and the lead frame. 11. The heat sink of the electronic/optoelectronic component of claim 1 wherein the electronic/photoelectric component 4 is a light emitting diode, and the light emitting diode is provided with a transparent substrate and a first electrical semiconductor layer. Formed on the transparent substrate, an active layer is formed on the first electrical semiconductive layer, a second electrical semiconductive layer is formed on the active layer, and a contact layer # is formed on the second electrical semiconductor a layer, and first and second electrodes are formed on Contact layer 'for direct engagement on a base. 13 201145474 Item ^ The heat sink of the electronic / optoelectronic component, the two seats: face: edge: can and the second electrode and its flip-chip joint: 1: 13, as requested, 9, 9, Or u heat device, wherein the resin can be a heat-dissipating transparent stone of the electric component _ can be a HI sub-level first piece of the piece 15, such as a request item 9, 1 〇, u heat device, wherein the transparent device The core of the electronic/photoelectric element of the rice core 2, - an electronic / optoelectronic component:: for the nano-level and other lightning levels. The surface is provided with a heat dissipating encapsulating material, and the heat dissipating/photoelectric element and the graphene or resin and the loading material 枓 comprise at least the resin in a weight percentage of the carbon nanotubes being less than a two-meter carbon tube, and the graphene or nai ", as required by the item (4). The electronic component may be a heat dissipating device of 1 (electric/electrical component) on a loading board and provided with a bonding wire: the IC electronic component is electrically connected, and the heat dissipation sealing device The material of the 1C electronic component and the package carrier 18 is coated with the electronic component of claim 16. The electronic component may be a heat sink of the Ic photovoltaic component, and the flip chip is formed on a pedestal. The 1C electronic component is disposed on the surface of the pedestal by applying a thermal encapsulation material on the electronic device S
TW099118896A 2010-06-10 2010-06-10 Heat dissipation device of electronic/photoelectric element TW201145474A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015155735A1 (en) * 2014-04-09 2015-10-15 Universidade Federal De Minas Gerais - Ufmg Method for producing a structural polymer resin modified by carbon nanostructures, product and use
US9404028B2 (en) 2012-11-12 2016-08-02 Ritedia Corporation Heat conducting composite material and light-emitting diode having the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9404028B2 (en) 2012-11-12 2016-08-02 Ritedia Corporation Heat conducting composite material and light-emitting diode having the same
WO2015155735A1 (en) * 2014-04-09 2015-10-15 Universidade Federal De Minas Gerais - Ufmg Method for producing a structural polymer resin modified by carbon nanostructures, product and use

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