JPH11112021A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH11112021A JPH11112021A JP26957797A JP26957797A JPH11112021A JP H11112021 A JPH11112021 A JP H11112021A JP 26957797 A JP26957797 A JP 26957797A JP 26957797 A JP26957797 A JP 26957797A JP H11112021 A JPH11112021 A JP H11112021A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting element
- adhesive
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、青色発光ダイオー
ド等の光デバイスに利用される窒化ガリウム系化合物半
導体発光装置に係り、特に高い発光効率を維持して電極
を安定接合しそのボンディング性も向上し得る半導体発
光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride-based compound semiconductor light emitting device used for an optical device such as a blue light emitting diode, and more particularly, to stably bond electrodes while maintaining high luminous efficiency and improve the bonding property. To a semiconductor light emitting device that can be used.
【０００２】[0002]
【従来の技術】ＧａＮ，ＧａＡｌＮ，ＩｎＧａＮ及びＩ
ｎＡｌＧａＮ等の窒化ガリウム系化合物半導体は、可視
光発光デバイスや高温動作電子デバイス用の半導体材料
として多用されるようになり、青色発光ダイオードの分
野での展開が進んでいる。2. Description of the Related Art GaN, GaAlN, InGaN and I
Gallium nitride-based compound semiconductors such as nAlGaN have been widely used as semiconductor materials for visible light emitting devices and high-temperature operating electronic devices, and are being developed in the field of blue light emitting diodes.
【０００３】この窒化ガリウム系化合物の半導体の製造
では、その表面において半導体膜を成長させるための結
晶基板として、一般的には絶縁性のサファイアが利用さ
れる。このサファイアのような絶縁性の結晶基板を用い
る場合では、結晶基板側から電極を出すことができない
ので、半導体層に設けるｐ，ｎの電極は結晶基板の一面
側に形成されることになる。これに対して、窒化ガリウ
ム系以外のたとえばＧａＡｓやＧａＡｌＰ等の半導体基
板を利用する発光素子では、たとえば下層をｎ型層及び
上層をｐ型層としてｐ−ｎ接合してこれらのｎ型層及び
ｐ型層のそれぞれにｎ側電極及びｐ側電極を設けること
ができる。In the manufacture of a gallium nitride-based compound semiconductor, an insulating sapphire is generally used as a crystal substrate for growing a semiconductor film on its surface. In the case of using an insulating crystal substrate such as sapphire, electrodes cannot be provided from the crystal substrate side, so that the p and n electrodes provided in the semiconductor layer are formed on one surface side of the crystal substrate. On the other hand, in a light emitting device using a semiconductor substrate other than gallium nitride, such as GaAs or GaAlP, for example, a pn junction is formed by using the lower layer as an n-type layer and the upper layer as a p-type layer, and these n-type layers and An n-side electrode and a p-side electrode can be provided for each of the p-type layers.
【０００４】サファイア基板上にｐ−ｎ接合を持つ窒化
ガリウム系化合物の半導体を積層した発光チップをリー
ドフレームに搭載した発光装置として、たとえば特開平
７−８６６４０号公報に記載されたものがある。A light-emitting device in which a light-emitting chip in which a gallium nitride compound semiconductor having a pn junction is stacked on a sapphire substrate is mounted on a lead frame is described in, for example, Japanese Patent Application Laid-Open No. 7-86640.
【０００５】これは、ｎ側及びｐ側のそれぞれの電極を
サファイア基板と対向する一面に接合した発光チップを
リードフレームに搭載するに際して、絶縁性であって透
明の接着剤によってリードフレームに接着する構成とし
たものである。このような構成であれば、接着剤が絶縁
性であることから、これが発光チップの側面に回り込ん
でｐ−ｎ接合界面に達しても電極間またはｐ−ｎ接合間
の短絡が防止できる。そして、サファイア基板は透明と
することができるので、発光面からの発光はサファイア
基板から透明の接着剤の層を抜けてリードフレームにも
達する。したがって、リードフレームを鏡面状としてお
けば、接着剤層からの発光を受けてこれを本来の発光面
側に反射させることができ、これによって発光輝度を上
げることができるとされている。[0005] When mounting a light emitting chip in which the n-side electrode and the p-side electrode are joined to one surface facing a sapphire substrate on a lead frame, the light emitting chip is bonded to the lead frame with an insulating and transparent adhesive. It is configured. With such a configuration, since the adhesive is insulative, a short circuit between the electrodes or the pn junction can be prevented even if the adhesive wraps around the side surface of the light emitting chip and reaches the pn junction interface. Since the sapphire substrate can be made transparent, light emitted from the light emitting surface reaches the lead frame through the transparent adhesive layer from the sapphire substrate. Therefore, if the lead frame is made to have a mirror-like shape, it is said that light emitted from the adhesive layer can be received and reflected on the original light emitting surface side, thereby increasing the light emission luminance.
【０００６】これに対し、たとえば一般のＬＥＤのよう
に下層をｎ型層及び上層をｐ型層とするものでは、ｐ型
層にはワイヤボンディングを施してｎ型層はリードフレ
ームと導通させるので、ｎ型層を積層する結晶基板及び
これをリードフレームに接着する接着剤としては導電性
のものに限られる。そして、導電性を持つ接着剤として
は、たとえば透明のエポキシ樹脂を主剤としこれにフィ
ラーとしてＡｇを混入したいわゆるＡｇペーストが好適
に利用できることが既に知られていて、混入したＡｇに
よって十分な導電性が得られる。On the other hand, for example, in a general LED, in which the lower layer is an n-type layer and the upper layer is a p-type layer, wire bonding is performed on the p-type layer and the n-type layer is electrically connected to the lead frame. The crystal substrate for laminating the n-type layers and the adhesive for bonding the crystal substrate to the lead frame are limited to conductive ones. As a conductive adhesive, for example, it is known that a so-called Ag paste in which a transparent epoxy resin is used as a main component and Ag is mixed therein as a filler can be suitably used. Is obtained.
【０００７】[0007]
【発明が解決しようとする課題】ところが、Ａｇペース
トの場合では、外部からの入射光に対してペースト中の
Ａｇは光の反射には貢献できず、入射した光はペースト
中から出なくて吸収されてしまう。However, in the case of the Ag paste, Ag in the paste cannot contribute to the reflection of light with respect to the incident light from the outside, and the incident light does not come out of the paste and is absorbed. Will be done.
【０００８】一方、ｐ型層及びｎ型層を上下に積層した
発光チップの場合でも、ｐ−ｎ接合面の発光域からの光
はｐ型層から上に放出されるだけでなくｎ型層からリー
ドフレーム側へも向かう。したがって、リードフレーム
側へ向けての発光に対してはＡｇペーストがこれを吸収
してしまうので、リードフレーム側を鏡面状としていて
も、反射光を有効に回収することはできない。このた
め、先の公報に記載のように絶縁性であって光を吸収す
る因子がない透明の接着剤を使用する場合に比べると、
発光チップからの発光輝度が劣ることになる。On the other hand, even in the case of a light emitting chip in which a p-type layer and an n-type layer are stacked one on top of the other, light from the light-emitting region at the pn junction surface is not only emitted upward from the p-type layer but also n-type layer. To the lead frame side. Therefore, since the Ag paste absorbs the light emitted toward the lead frame side, the reflected light cannot be effectively collected even if the lead frame side is mirror-finished. For this reason, as compared with the case where a transparent adhesive that is insulative and has no light absorbing factor is used as described in the above-mentioned publication,
The light emission luminance from the light emitting chip is inferior.
【０００９】ここで、先の公報に記載の窒化ガリウム系
化合物の半導体を積層した発光チップにおいても、サフ
ァイア基板は絶縁性であることから、絶縁性の接着剤に
限らずＡｇを含む導電性の接着剤によってリードフレー
ムに接着する組立てが可能である。そして、サファイア
基板は透明であることから、発光域からの光はリードフ
レーム側に放射されて反射光として回収することもでき
る。Here, even in the light emitting chip in which the gallium nitride-based compound semiconductor described in the above publication is laminated, the sapphire substrate is insulative. Assembly that adheres to the lead frame with an adhesive is possible. Since the sapphire substrate is transparent, light from the light emitting region can be radiated to the lead frame side and collected as reflected light.
【００１０】このように発光素子の基板が絶縁性であれ
ば、リードフレームに固定するための接着剤は導電性ま
たは絶縁性のいずれでもよい。しかしながら、導電性を
持たせるためにＡｇペーストを用いるのでは、先に述べ
たように光の吸収が起きるので、発光効率の向上には貢
献度が小さい。また、絶縁性とした場合には、一般的に
光の透過率が低下してしまうため、反射光を回収しても
最終的な発光効率の向上にも限界がある。If the substrate of the light emitting element is insulative as described above, the adhesive for fixing to the lead frame may be either conductive or insulative. However, when an Ag paste is used to impart conductivity, light absorption occurs as described above, and thus the contribution to the improvement of the luminous efficiency is small. In addition, in the case of insulating properties, the transmittance of light generally decreases, so that even if the reflected light is recovered, there is a limit to the improvement in the final luminous efficiency.
【００１１】また、発光効率の低下の原因の一つとし
て、発光素子が或る臨界温度よりも高温になることが知
られている。したがって、先の公報にも記載のように、
熱伝導率が高い絶縁性のフィラーを接着剤に混入すれ
ば、発光素子の熱をリードフレーム側に放熱すること
で、発光効率の低下を免れ得る。しかしながら、フィラ
ーも含めて絶縁性のものであれば、このフィラーを含む
絶縁性の接着剤を用いると、先に述べたように、光の透
過率の低下によって反射光の有効な回収ができないこと
になる。It is known that one of the causes of a decrease in luminous efficiency is that the temperature of a light emitting element becomes higher than a certain critical temperature. Therefore, as described in the previous publication,
If an insulating filler having a high thermal conductivity is mixed into the adhesive, the heat of the light emitting element is radiated to the lead frame side, thereby avoiding a decrease in luminous efficiency. However, if the insulating adhesive including the filler is used, if the insulating adhesive including the filler is used, as described above, the reflected light cannot be effectively collected due to a decrease in light transmittance. become.
【００１２】以上のことから、サファイア等の絶縁性の
結晶基板を持つものであって、接着剤が絶縁性でも導電
性でもどちらでもよいものでは、光の透過性が高い材料
を選択することが有利である。そして、この光透過性と
した上でさらに熱伝導率を高くすれば発光素子からの放
熱による発光効率の向上が可能となることが明らかであ
る。From the above, when the substrate has an insulating crystal substrate such as sapphire and the adhesive may be either insulating or conductive, a material having a high light transmittance may be selected. It is advantageous. It is clear that, if the light transmittance is further increased and the thermal conductivity is further increased, the luminous efficiency can be improved by heat radiation from the light emitting element.
【００１３】したがって、本発明において解決すべき課
題は、光透過可能であって熱伝導性を持つ接着剤を使用
して発光域からの光をリードフレームからの反射光とし
ても回収して輝度を上げるとともに、発光素子の放熱を
促進してその発光効率を高く維持できる半導体発光装置
を提供することにある。[0013] Therefore, the problem to be solved in the present invention is to use a light transmissive and thermally conductive adhesive to collect light from the light emitting region as reflected light from the lead frame to reduce the luminance. It is another object of the present invention to provide a semiconductor light emitting device capable of promoting heat radiation of a light emitting element and maintaining a high luminous efficiency.
【００１４】[0014]
【課題を解決するための手段】本発明は、ｐ−ｎ接合の
半導体層を結晶基板上に積層した発光素子と、この発光
素子を搭載して電気的に導通させる搭載導通部材とを備
え、発光素子を搭載導通部材に接着剤を介して固定する
半導体発光装置であって、発光素子の発光域からリード
フレーム側に対峙する層及び結晶基板を光透過性とする
とともに、接着剤を光透過性であって熱伝導性を持つ材
料とし、更に搭載導通部材は少なくとも発光素子を搭載
する面を光反射可能としてなることを特徴とする。According to the present invention, there is provided a light emitting device in which a pn junction semiconductor layer is laminated on a crystal substrate, and a mounting conductive member for mounting the light emitting device and electrically conducting the light emitting device. A semiconductor light-emitting device in which a light-emitting element is fixed to a mounting conductive member via an adhesive, and a layer and a crystal substrate facing a lead frame side from a light-emitting area of the light-emitting element are made to be light-transmitting, and the adhesive is light-transmitting And a heat conductive material, and the mounting conductive member can reflect light at least on a surface on which the light emitting element is mounted.
【００１５】このような構成であれば、発光素子の発光
域からは発光面側だけでなく光透過可能な半導体の層か
ら光透過性の接着剤を抜けて、搭載導通部材としてたと
えばリードフレームの光反射可能な面にも向かうので、
リードフレームからの反射光も含めて発光素子の発光面
からの発光が可能となる。また、接着剤は熱伝導性を持
つので、発光素子が持つ熱を搭載導通部材側に放熱する
ことができ、発光素子の発光効率を高く維持することも
できる。With such a configuration, the light-transmitting adhesive is removed not only from the light-emitting surface side but also from the light-transmitting semiconductor layer from the light-emitting area of the light-emitting element, and is used as a mounting conductive member, for example, of a lead frame. Because it goes to the surface that can reflect light,
Light can be emitted from the light emitting surface of the light emitting element, including the light reflected from the lead frame. Further, since the adhesive has thermal conductivity, the heat of the light emitting element can be radiated to the mounting conductive member side, and the luminous efficiency of the light emitting element can be maintained high.
【００１６】なお、本発明においては、発光素子を搭載
して電気的に導通させる搭載導通部材は、発明の実施の
形態の項で示すようにリードフレームであり、この他に
もプリント基板またはプリント基板の上方に別体として
配置する各種の成型品とすることもできる。In the present invention, the mounting conductive member for mounting the light emitting element and electrically connecting the light emitting element is a lead frame as described in the embodiment of the present invention. Various types of molded products may be arranged separately above the substrate.
【００１７】[0017]
【発明の実施の形態】請求項１に記載の発明は、ｐ−ｎ
接合の半導体層を結晶基板上に積層した発光素子と、こ
の発光素子を搭載して電気的に導通させる搭載導通部材
とを備え、発光素子を搭載導通部材に接着剤を介して固
定する半導体発光装置であって、発光素子の発光域から
リードフレーム側に対峙する層及び結晶基板を光透過性
とするとともに、接着剤を光透過性であって熱伝導性を
持つ材料とし、更に搭載導通部材は少なくとも発光素子
を搭載する面を光反射可能としてなるものであり、半導
体層から接着剤層を抜ける側への発光域からの光をリー
ドフレームの光反射面で反射して発光素子の発光面から
発光させ、全体の発光輝度を上げるほか、接着剤の熱伝
導性によって発光素子からの放熱を促進させるという作
用を有する。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 is a pn
A semiconductor light emitting device comprising: a light emitting element in which a bonded semiconductor layer is laminated on a crystal substrate; and a mounting conductive member for mounting the light emitting element and electrically connecting the light emitting element, and fixing the light emitting element to the mounting conductive member via an adhesive. The device, wherein the layer and the crystal substrate facing the lead frame side from the light emitting region of the light emitting element are made light transmissive, the adhesive is made of a light transmissive material having heat conductivity, and the mounting conductive member is further provided. The light-emitting surface of the light-emitting element reflects light from the light-emitting area from the semiconductor layer to the side passing through the adhesive layer at the light-reflecting surface of the lead frame. In addition to having the effect of increasing the overall light emission luminance, the heat conductivity of the adhesive promotes the heat radiation from the light emitting element.
【００１８】請求項２に記載の発明は、接着剤は、熱伝
導率が３．０×１０-2〜４×１０-2ｃａｌ／ｃｍ・ｓｅ
ｃ・℃程度の導電性物質または半導電性物質を含むもの
であり、放熱性を良化した結果、発光素子の熱による振
動の影響で電子の自由行程が短くなり、ホールと再結合
する確率が低下するとによる発光効率の低下を防ぐとい
う作用を有する。According to a second aspect of the present invention, the adhesive has a thermal conductivity of 3.0 × 10 -2 to 4 × 10 -2 cal / cm · sec.
Containing a conductive or semiconductive substance of about c · ° C. As a result of improving heat dissipation, the free path of electrons is shortened by the influence of vibration of the light emitting element due to heat, and the probability of recombination with holes Has the effect of preventing the luminous efficiency from lowering due to the lowering.
【００１９】請求項３に記載の発明は、発光素子を、導
電性の結晶基板とその上に積層するｐ−ｎ接合の半導体
層とから構成し、接着剤をｐ−ｎ接合面よりも下側の範
囲に充填してなるものであり、接着剤が導電性であって
もｐ−ｎ接合間の短絡を防止するという作用を有する。According to a third aspect of the present invention, the light emitting device comprises a conductive crystal substrate and a pn junction semiconductor layer laminated thereon, and an adhesive is provided below the pn junction surface. It has a function of preventing a short circuit between pn junctions even if the adhesive is conductive.
【００２０】請求項４に記載の発明は、発光素子を、絶
縁性のサファイア基板とその上に積層するｐ−ｎ接合の
窒化ガリウム系化合物の半導体層とから構成し、接着剤
をサファイア基板にのみ接触させて充填してなるもので
あり、接着剤が導電性であっても絶縁性のサファイア基
板のみに接触するだけなので、半導体層の短絡がなく発
光素子のリードフレーム側への放熱を促すという作用を
有する。According to a fourth aspect of the present invention, a light-emitting device comprises an insulating sapphire substrate and a pn junction gallium nitride-based compound semiconductor layer laminated thereon, and an adhesive is applied to the sapphire substrate. It is filled only by contact, and even if the adhesive is conductive, it only contacts the insulating sapphire substrate, so there is no short circuit of the semiconductor layer and the heat radiation to the lead frame side of the light emitting element is promoted. It has the action of:
【００２１】以下に、本発明の実施の形態の具体例を図
面を参照しながら説明する。図１は本発明の一実施の形
態におけるＧａＡｓやＧａＡｌＰ等によって形成される
ＬＥＤチップを発光素子として備えたＬＥＤランプの例
であって、同図の（ａ）は要部の縦断面図、同図の
（ｂ）はＬＥＤチップ部分の拡大図である。Hereinafter, specific examples of the embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows an example of an LED lamp having an LED chip formed of GaAs, GaAlP, or the like as a light emitting element according to an embodiment of the present invention. FIG. (B) of the figure is an enlarged view of the LED chip portion.
【００２２】図において、リードフレーム１の上に発光
素子２が搭載され、この発光素子２のｐ型層２ａにはワ
イヤ１ａがワイヤボンディングによって接続され、この
ワイヤ１ａを含めて透明のエポキシ樹脂３によりコーテ
ィングされている。Referring to FIG. 1, a light emitting element 2 is mounted on a lead frame 1, and a wire 1a is connected to a p-type layer 2a of the light emitting element 2 by wire bonding. Coated.
【００２３】発光素子２はｐ型層２ａの下側にｎ型層２
ｂをｐ−ｎ接合し、ｐ型層２ａの上面のｐ電極２ａ−１
にワイヤ１ａがボンディングされている。そして、ｎ型
層２ｂとリードフレーム１との間の導通は、発光素子２
をこのリードフレーム１に固定するための導電性の接着
剤４を介して行わせる。The light emitting element 2 has an n-type layer 2 under the p-type layer 2a.
b is a pn junction, and a p-electrode 2a-1 on the upper surface of the p-type layer 2a is formed.
Is bonded to the wire 1a. The conduction between the n-type layer 2b and the lead frame 1
Through a conductive adhesive 4 for fixing to the lead frame 1.
【００２４】接着剤４はエポキシ樹脂をその主剤とした
ものであり、この主剤にフィラーとして透明導電剤を混
入したものである。透明導電剤としては、たとえば液晶
素子基板上に電極用の膜として形成される透明導電膜に
利用されるＩＴＯ（インジウム・ティン・オキサイド）
を用いることができる。このＩＴＯは、電気抵抗が小さ
くて光透過率が高いという物性を持つことが知られてい
る。The adhesive 4 has an epoxy resin as a main component, and a mixture of the main component and a transparent conductive agent as a filler. As the transparent conductive agent, for example, ITO (Indium Tin Oxide) used for a transparent conductive film formed as a film for an electrode on a liquid crystal element substrate
Can be used. It is known that ITO has physical properties such as low electric resistance and high light transmittance.
【００２５】このようなエポキシ樹脂の主剤にフィラー
としてＩＴＯを混入する接着剤４の組成においては、発
光素子２のリードフレーム１への固定という機能と、ｎ
型層２ｂとリードフレーム１との間の熱伝導がそれぞれ
十分に保たれたうえで、しかも高い透光性の透明度を持
つようにすることが必要である。In the composition of the adhesive 4 in which ITO is mixed as a filler into the main component of the epoxy resin, the function of fixing the light emitting element 2 to the lead frame 1 and the function of n
It is necessary to ensure that the heat conduction between the mold layer 2b and the lead frame 1 is sufficiently maintained and that the mold layer 2b has high translucency and transparency.
【００２６】このような条件を満たす接着剤４の組成と
しては、たとえば、ビスフェニルＦ型エポキシ樹脂：８
０重量部，反応性希釈剤：２０重量部，硬化剤：７重量
部，硬化触媒：３重量部，ＩＴＯ：１００重量部，その
他の微量添加剤：２重量部をその一例として挙げること
ができる。そして、これらの組成の中で、熱伝達材とし
てその貢献度が大きいものはＩＴＯであり、その単体の
熱伝導率は３．５×１０-2ｃａｌ／ｃｍ・ｓｅｃ・℃程
度である。The composition of the adhesive 4 satisfying such conditions is, for example, bisphenyl F type epoxy resin: 8
0 parts by weight, a reactive diluent: 20 parts by weight, a curing agent: 7 parts by weight, a curing catalyst: 3 parts by weight, ITO: 100 parts by weight, and other trace additives: 2 parts by weight. . Among these compositions, ITO having a large contribution as a heat transfer material is ITO, and the thermal conductivity of a simple substance thereof is about 3.5 × 10 −2 cal / cm · sec · ° C.
【００２７】なお、これらの材料の種類の組合せ及び重
量部の配分はこのような例に制約されるものではなく、
その他の適切な材料を加えてもよいことは無論である。The combination of these types of materials and the distribution of parts by weight are not limited to such examples.
Of course, other suitable materials may be added.
【００２８】このように、接着剤４の主剤としてはエポ
キシ樹脂の他の種類のものが利用できるほか、その色に
ついても様々に対応させることができ、更に反射に好適
なリードフレーム１の反射面についても各種の構成が考
えられる。As described above, as the main component of the adhesive 4, other types of epoxy resin can be used, and the colors of the epoxy resin can be made to correspond variously, and the reflection surface of the lead frame 1 suitable for reflection can be used. Various configurations are also conceivable.
【００２９】たとえば、接着剤４の主剤に好適なものと
しては、導電性であってしかも光透過性を持つ各種のフ
ィラーであればよく、たとえば硫酸バリウムにＩＴＯを
コーティングした粉末や、ボロンポリマーが利用でき
る。For example, a suitable filler for the main component of the adhesive 4 may be any kind of filler that is electrically conductive and has a light transmitting property. For example, powder obtained by coating barium sulfate with ITO or boron polymer may be used. Available.
【００３０】このように、ＩＴＯを含むことによって導
電性を持たせた透明の接着剤４を得ることができ、この
接着剤４によって発光素子２をリードフレーム１に固定
したときにはｎ型層２ｂをこのリードフレーム１に電気
的に接続することができる。そして、ｐ型層２ａとｎ型
層２ｂとの接合面の発光域からの光は、同図の（ｂ）に
示すようにｐ型層２ａの上端の発光面から放出される発
光だけでなく、ｎ型層２ｂからリードフレーム１の搭載
面側に向かう発光も含まれる。このリードフレーム１側
に向かう発光の光路中には、透明の接着剤４が介在して
いるだけなので、光はこの接着剤４を抜けてリードフレ
ーム１の搭載面に達する。したがって、リードフレーム
１の搭載面を鏡面状としておけば、光をｐ型層２ａの上
面の発光面に向けて反射させることができ、これによっ
て発光輝度が向上することになる。As described above, a transparent adhesive 4 having conductivity by containing ITO can be obtained. When the light emitting element 2 is fixed to the lead frame 1 by the adhesive 4, the n-type layer 2b is formed. The lead frame 1 can be electrically connected. The light from the light-emitting region at the junction surface between the p-type layer 2a and the n-type layer 2b is not only the light emitted from the light-emitting surface at the upper end of the p-type layer 2a, as shown in FIG. , From the n-type layer 2b toward the mounting surface side of the lead frame 1. Since only the transparent adhesive 4 is interposed in the light path of the light emitted toward the lead frame 1, the light passes through the adhesive 4 and reaches the mounting surface of the lead frame 1. Therefore, if the mounting surface of the lead frame 1 is mirror-finished, light can be reflected toward the light emitting surface on the upper surface of the p-type layer 2a, thereby improving the light emission luminance.
【００３１】また、接着剤４はＩＴＯを導電剤として含
むので、この導電剤の金属の自由電子による熱伝達が得
られる。したがって、金属の自由電子を含まない絶縁性
の接着剤に比べると、発光素子２からリードフレーム１
側への伝熱が促進され、発光素子２の発熱がリードフレ
ーム２に熱伝達されて放熱される。一方、発光素子２は
電子とホールとの再結合によって発光するが、熱による
振動により電子の平均自由行程が短くなる。したがっ
て、発光素子２は高熱になると、ホールと再結合する確
率が低下していくため発光効率が低下することになる
が、導電性の接着剤４によるリードフレーム１側への放
熱によって発光効率を高く維持でき、輝度の低下も免れ
得る。Since the adhesive 4 contains ITO as a conductive agent, heat can be transferred by free electrons of the metal of the conductive agent. Therefore, as compared with an insulating adhesive that does not include free electrons of metal, the light emitting element 2 can lead the lead frame 1
The heat transfer to the side is promoted, and the heat generated by the light emitting element 2 is transferred to the lead frame 2 and radiated. On the other hand, the light emitting element 2 emits light by recombination of electrons and holes, but the mean free path of the electrons is shortened by vibration due to heat. Therefore, when the heat of the light emitting element 2 becomes high, the probability of recombination with holes decreases, so that the luminous efficiency decreases. However, the luminous efficiency is reduced by heat radiation to the lead frame 1 side by the conductive adhesive 4. It can be kept high, and a decrease in luminance can be avoided.
【００３２】図２は窒化ガリウム系化合物の半導体積層
膜によって青色ＬＥＤとして利用できるＬＥＤランプの
例を示す概略図である。FIG. 2 is a schematic view showing an example of an LED lamp which can be used as a blue LED by using a semiconductor laminated film of a gallium nitride-based compound.
【００３３】リードフレーム６の上に搭載された発光素
子５は、透明のサファイア基板５ａ上にｎ型窒化物半導
体層及びｐ型窒化物半導体層をそれぞれ積層し、ｐ型窒
化物半導体層の一部をエッチングより除去してｎ側電極
５ｂを設けるとともに、ｐ型窒化物半導体層の上面には
ｐ側電極５ｃを接合したものである。そして、ｎ側電極
５ｂにはワイヤ７ａによってリードフレーム６との間で
ワイヤボンディングし、ｐ側電極５ｃもワイヤ７ｂによ
って他方のリードフレーム８と接続し、これらの全てを
内包してエポキシ樹脂９によってコーティングしてい
る。The light emitting element 5 mounted on the lead frame 6 has an n-type nitride semiconductor layer and a p-type nitride semiconductor layer laminated on a transparent sapphire substrate 5a, respectively. The portion is removed by etching to provide the n-side electrode 5b, and the p-side electrode 5c is joined to the upper surface of the p-type nitride semiconductor layer. The n-side electrode 5b is wire-bonded to the lead frame 6 by a wire 7a, and the p-side electrode 5c is connected to the other lead frame 8 by a wire 7b. Coated.
【００３４】発光素子５は、図１の例と同様に、ＩＴＯ
を含有した導電性であって透明の接着剤１０によってリ
ードフレーム６の上端の偏平なトレイ６ａ上に固定され
ている。この接着剤１０は、絶縁性のサファイア基板５
ａの底面及びその周面を被覆する程度の厚さの層として
塗布され、このサファイア基板５ａの上層のｎ型窒化物
半導体層とは導通させないものとする。The light emitting element 5 is made of ITO as in the example of FIG.
Is fixed on the flat tray 6a at the upper end of the lead frame 6 by a transparent and transparent adhesive 10 containing. This adhesive 10 is used for the insulating sapphire substrate 5.
The sapphire substrate 5a is applied as a layer having a thickness enough to cover the bottom surface and the peripheral surface of the sapphire substrate 5a and does not conduct with the upper n-type nitride semiconductor layer.
【００３５】このＬＥＤランプにおいても、ｐ−ｎ接合
面の発光域からの光はｐ型窒化半導体層の上面を発光面
として上に抜ける光と、サファイア基板５ａが透明なの
でその底面に向かう発光が得られる。そして、サファイ
ア基板５ａの下層を形成している接着剤１０は透明なの
で、サファイア基板５ａからの光をトレイ６ａの上面ま
で透過させることができる。したがって、先の例と同様
に、トレイ６ａの上面を鏡面処理しておけば、サファイ
ア基板５ａからの反射光を発光面からの光として取り出
すことができる。これにより、ｐ型窒化半導体層の上面
の発光面からの発光輝度及び発光効率の向上が可能とな
る。Also in this LED lamp, light from the light-emitting region of the pn junction surface is emitted to the upper side of the p-type nitride semiconductor layer as the light-emitting surface and to the bottom surface because the sapphire substrate 5a is transparent. can get. Since the adhesive 10 forming the lower layer of the sapphire substrate 5a is transparent, light from the sapphire substrate 5a can be transmitted to the upper surface of the tray 6a. Therefore, similarly to the above example, if the upper surface of the tray 6a is mirror-finished, the reflected light from the sapphire substrate 5a can be extracted as light from the light emitting surface. This makes it possible to improve the light emission luminance and the light emission efficiency from the light emitting surface on the upper surface of the p-type nitride semiconductor layer.
【００３６】また、接着剤１０の熱伝導性によって、発
光素子５の発熱をトレイ６ａ側に熱伝達してリードフレ
ーム６側に放熱できるので、発光素子５の発光効率の低
下も防止される。Also, the heat conductivity of the adhesive 10 allows the heat generated by the light emitting element 5 to be transferred to the tray 6a and radiated to the lead frame 6, thereby preventing the light emitting efficiency of the light emitting element 5 from lowering.
【００３７】このように、熱伝導性を持つ接着剤１０に
よってこのサファイア基板５ａで被覆していても、サフ
ァイア基板５ａが絶縁性であることから、発光素子５の
電気的接続には何ら干渉せず短絡を生じることもない。
すなわち、サファイアを結晶基板として用いる各種の発
光素子に対して、接着剤は導電性でも絶縁性でもいずれ
でもよく、電気的導通については絶縁性のサファイア基
板によって支配される。したがって、図１で示したよう
な一般的なＬＥＤの発光素子２でも、図２のようなｎ側
及びｐ側の電極５ｂ，５ｃをサファイア基板５ａと対向
する側の一面に設ける必要がある発光素子５のいずれで
も、導電性の接着剤が共用できる。As described above, even when the sapphire substrate 5a is covered with the adhesive 10 having thermal conductivity, since the sapphire substrate 5a is insulative, it does not interfere with the electrical connection of the light emitting element 5 at all. No short circuit occurs.
That is, for various light emitting elements using sapphire as a crystal substrate, the adhesive may be either conductive or insulating, and electrical conduction is governed by the insulating sapphire substrate. Therefore, even in the light emitting element 2 of a general LED as shown in FIG. 1, it is necessary to provide the n-side and p-side electrodes 5b and 5c on one surface facing the sapphire substrate 5a as shown in FIG. Any of the elements 5 can share a conductive adhesive.
【００３８】[0038]
【発明の効果】請求項１の発明では、半導体層から接着
剤層を抜ける側への発光域からの光を搭載導通部材の光
反射面で反射して発光素子の発光面から発光させること
ができるので、全体の発光輝度が向上する。また、接着
剤の熱伝導性により自由電子による搭載導通部材側への
発光素子からの熱伝達が促進されるので、発光素子の高
温化による発光効率の低下も抑えられる。According to the first aspect of the present invention, light from the light emitting region from the semiconductor layer to the side passing through the adhesive layer is reflected by the light reflecting surface of the mounting conductive member and emitted from the light emitting surface of the light emitting element. As a result, the overall light emission luminance is improved. Further, since the heat conductivity of the adhesive promotes the transfer of heat from the light emitting element to the mounting conductive member side by free electrons, a decrease in luminous efficiency due to a high temperature of the light emitting element can be suppressed.
【００３９】請求項２の発明では、放熱性を良化した結
果、発光素子の熱による振動の影響で電子の自由行程が
短くなり、ホールと再結合する確率が低下することによ
る発光効率の低下を防ぐという効果を奏する。According to the second aspect of the present invention, as a result of improving heat dissipation, the free path of electrons is shortened by the influence of vibration of the light emitting element due to heat, and the luminous efficiency is reduced due to the reduced probability of recombination with holes. This has the effect of preventing
【００４０】請求項３の発明では、接着剤が熱伝導性で
あってもｐ−ｎ接合間の短絡を防止できるほか、発光輝
度の向上が可能となる。According to the third aspect of the present invention, even if the adhesive is thermally conductive, a short circuit between the pn junctions can be prevented, and the luminance can be improved.
【００４１】請求項４の発明では、接着剤が熱伝導性で
あっても絶縁性のサファイア基板のみに接触するだけな
ので、半導体層の短絡がないほか発光素子のリードフレ
ーム側への放熱の促進によって発光効率の低下も防止で
きる。According to the fourth aspect of the present invention, even if the adhesive is thermally conductive, it only contacts the insulating sapphire substrate, so there is no short circuit of the semiconductor layer and the heat radiation to the lead frame side of the light emitting element is promoted. Thus, a decrease in luminous efficiency can be prevented.
【図１】（ａ）本発明の一実施の形態による窒化ガリウ
ム系化合物半導体発光素子の要部の縦断面図 （ｂ）同ＬＥＤチップ部分の拡大図FIG. 1A is a longitudinal sectional view of a main part of a gallium nitride based compound semiconductor light emitting device according to an embodiment of the present invention. FIG. 1B is an enlarged view of the LED chip portion.
【図２】発光素子の要部の概略縦断面図FIG. 2 is a schematic longitudinal sectional view of a main part of a light emitting element.
１ リードフレーム １ａ ワイヤ ２ 発光素子 ２ａ ｐ型層 ２ｂ ｎ型層 ３ エポキシ樹脂 ５ 発光素子 ５ａ サファイア基板 ５ｂ ｎ側電極 ５ｃ ｐ側電極 ６ リードフレーム ６ａ トレイ ７ａ，７ｂ ワイヤ ８ リードフレーム ９ エポキシ樹脂 １０ 接着剤 DESCRIPTION OF SYMBOLS 1 Lead frame 1a Wire 2 Light emitting element 2a P type layer 2b N type layer 3 Epoxy resin 5 Light emitting element 5a Sapphire substrate 5b N side electrode 5c P side electrode 6 Lead frame 6a Tray 7a, 7b Wire 8 Lead frame 9 Epoxy resin 10 Adhesion Agent
Claims (4)
層した発光素子と、この発光素子を搭載して電気的に導
通させる搭載導通部材とを備え、発光素子を搭載導通部
材に接着剤を介して固定する半導体発光装置であって、
発光素子の発光域からリードフレーム側に対峙する層及
び結晶基板を光透過性とするとともに、接着剤を光透過
性であって熱伝導性を持つ材料とし、更に搭載導通部材
は少なくとも発光素子を搭載する面を光反射可能として
なる半導体発光装置。1. A light emitting device comprising: a pn junction semiconductor layer laminated on a crystal substrate; and a mounting conductive member for mounting the light emitting device and electrically connecting the light emitting device, and bonding the light emitting element to the mounting conductive member. A semiconductor light emitting device fixed via an agent,
The layer and the crystal substrate facing the lead frame side from the light emitting region of the light emitting element are made light transmissive, the adhesive is made of a light transmissive material having heat conductivity, and the mounting conductive member is at least a light emitting element. A semiconductor light emitting device in which the surface on which it is mounted can reflect light.
４×１０-2ｃａｌ／ｃｍ・ｓｅｃ・℃程度の導電性物質
または半導電性物質を含む請求項１記載の半導体発光装
置。2. The adhesive has a thermal conductivity of 3.0 × 10 -2 or less .
2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device contains a conductive substance or a semiconductive substance of about 4 × 10 −2 cal / cm · sec · ° C.
に積層するｐ−ｎ接合の半導体層とから構成し、接着剤
をｐ−ｎ接合面よりも下側の範囲に充填してなる請求項
１または２記載の半導体発光装置。3. A light-emitting element comprising a conductive crystal substrate and a pn junction semiconductor layer laminated thereon, and an adhesive is filled in a region below the pn junction surface. 3. The semiconductor light emitting device according to claim 1, wherein:
その上に積層するｐ−ｎ接合の窒化ガリウム系化合物の
半導体層とから構成し、接着剤をサファイア基板にのみ
接触させて充填してなる請求項１から３のいずれかに記
載の半導体発光装置。4. A light emitting device comprising an insulating sapphire substrate and a semiconductor layer of a pn junction gallium nitride based compound laminated on the insulating sapphire substrate, and filled with an adhesive by contacting only the sapphire substrate. The semiconductor light emitting device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26957797A JPH11112021A (en) | 1997-10-02 | 1997-10-02 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26957797A JPH11112021A (en) | 1997-10-02 | 1997-10-02 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11112021A true JPH11112021A (en) | 1999-04-23 |
Family
ID=17474311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26957797A Pending JPH11112021A (en) | 1997-10-02 | 1997-10-02 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11112021A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273407A (en) * | 2002-03-15 | 2003-09-26 | Sharp Corp | Semiconductor light emitting device |
| JP2009289918A (en) * | 2008-05-28 | 2009-12-10 | Alps Electric Co Ltd | Semiconductor light-emitting device |
| JP2013110435A (en) * | 2003-08-28 | 2013-06-06 | Intellectual Discovery Co Ltd | Light-emitting device/assembly having enhanced heat conductivity, system including the same and method of enhancing heat conductivity |
| JP2014140072A (en) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | Light-emitting element module |
| JP2014175354A (en) * | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | Light-emitting diode |
| US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
-
1997
- 1997-10-02 JP JP26957797A patent/JPH11112021A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273407A (en) * | 2002-03-15 | 2003-09-26 | Sharp Corp | Semiconductor light emitting device |
| JP2013110435A (en) * | 2003-08-28 | 2013-06-06 | Intellectual Discovery Co Ltd | Light-emitting device/assembly having enhanced heat conductivity, system including the same and method of enhancing heat conductivity |
| JP2009289918A (en) * | 2008-05-28 | 2009-12-10 | Alps Electric Co Ltd | Semiconductor light-emitting device |
| US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
| JP2014175354A (en) * | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | Light-emitting diode |
| JP2014140072A (en) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | Light-emitting element module |
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