TWM270492U - Package structure improvement of LED - Google Patents

Package structure improvement of LED Download PDF

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Publication number
TWM270492U
TWM270492U TW093215986U TW93215986U TWM270492U TW M270492 U TWM270492 U TW M270492U TW 093215986 U TW093215986 U TW 093215986U TW 93215986 U TW93215986 U TW 93215986U TW M270492 U TWM270492 U TW M270492U
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TW
Taiwan
Prior art keywords
package structure
emitting diode
patent application
scope
light
Prior art date
Application number
TW093215986U
Other languages
Chinese (zh)
Inventor
Jen-Shian Chen
Original Assignee
Jen-Shian Chen
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Publication date
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Priority to TW093215986U priority Critical patent/TWM270492U/en
Publication of TWM270492U publication Critical patent/TWM270492U/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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  • Led Device Packages (AREA)

Description

M270492 八、新型說明： 【新型所屬之技術領域】 本創作係有關一種封裝結構，特別是有關一種散熱效率高之發光二極體封 裝結構改良。 【先前技術】 按，隨著科技的發展，發光二極體(Ught Emitting Diode ? LED)效能己取代冷陰極 螢光燈官(€。此地心1:、1_5。61111』11^，(10^)及現有之照明光源，然而雖然現今的1^0 封裝大多採用低功率LED晶片較不會遇到散熱問題，但若要以LED代替CCFL 作為照明產品，則必須將LED之整體功率密度予以提高，此時，將伴隨產生led 晶片溫度過高的問題，若沒有合適的散熱設計會造成發光效率降低及LED壽命 減短等問題，所以現今LED封裝結構皆是採用金屬承載基板（Metal Core PrimM270492 8. Description of the new type: [Technical field to which the new type belongs] This creation relates to a packaging structure, and in particular to the improvement of a light emitting diode packaging structure with high heat dissipation efficiency. [Previous technology] According to the development of science and technology, the efficiency of light-emitting diodes (Ught Emitting Diode? LED) has replaced the cold cathode fluorescent lamps (€. Here the center 1: 1, 1_5. 61111 "11 ^, (10 ^ ) And existing lighting sources, however, although today's 1 ^ 0 packages mostly use low-power LED chips, they will not experience heat dissipation problems, but if you want to replace LEDs with CCFLs as lighting products, you must increase the overall power density of LEDs At this time, there will be a problem that the LED chip temperature is too high. If there is no proper heat dissipation design, the luminous efficiency will be reduced and the life of the LED will be shortened. Therefore, the current LED packaging structures use metal carrier substrates (Metal Core Prim).

Circuit Board，MCPCB)或低溫共燒陶兗（l〇w Temperature Co-Fired Ceramic，Circuit Board (MCPCB) or Low Temperature Co-Fired Ceramic,

LTCC)作為散熱媒介，以McpcB而言，因金屬材質之熱膨脹係數遠大於LED 晶片’LED晶片於工作時會因溫度升高而產生内應力，導致LED晶片的損壞， ¥使用共燒l^^(LTCC)材料為承載基板時，其價格高昂且加J1不易，無法 製作出複雜結構’且其導紐能更是遠不及慣㈣金屬導熱材料，因此如何解 決上述習知技術產生的問題，是目前業界亟需解決的困難點。 #鐘於此’本創作係針對上述之問題，提出一種發光二極體封裝結構改良， 以有效解決上述問題。 【新型内容】 本創作之主要目的’係在提供一種發光二極體封裝結構改良，藉由預鋪設好 M270492 線路之矽晶材質的基板將電源導引至每一個發光二極體，利用矽晶材質可以有 效降低基板厚度，再加上矽晶材質的熱導性能佳，可有效降低熱阻，進而提高 散熱效率。 本創作之另一目的，係在提供一種發光二極體封裝結構改良，藉由熱膨脹 係數接近於發光二極體晶片的矽晶材質的基板，使基板在吸熱後不會產生撓 曲，進而使LE：D設置於基板的密集度提高。 根據本創作，一種發光二極體封裝結構改良，其係包括一矽晶基板，此種 石夕晶基板具有-第-表面及一第二表面，I該第一表面上設有一電路層，此電 路層與二電極電性連接，且在矽晶基板之第一表面上設置複數發光源，每一發 光源與電路層形成電性連接，並在矽晶基板第一表面上設置一封裝層將電路層 及每一發光源予以包覆。 底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本創作之目 的、技術内容、特點及其所達成之功效。 【實施方式】 本創作係提出一種發光二極體封裝結構改良，如第一圖至第三圖所示，其 係包括一矽晶基板10，此矽晶基板10可預先將厚度磨為〇· i刪至〇· 4mm之間， 且此石夕晶基板10讀質係為P、N摻雜型叙料晶或碳财(si〇等導熱性良 好材料’且此⑨晶基板10具有H面12及_第二表面14，且在第一表面 12設置-絶緣層15，接著在此石夕晶基板1〇之第一表面12的絶緣層15上設置 二電極端點16及電路層17，此電路層17可以作為一發光源18彼此間的連接以 及封裝打線之用，此電路層17最終會連接至二電極端點16，第—表面12的絶 緣層15上再設置複數發光源18，而此發光源18係採用發光二極體，且使每一 M270492 發光源18與電路層17形成電性連接，其中每一發光源μ與電路層I?連接方 式可選擇覆晶(Flip Chip)或打線(Wire Bonding)方式，利财聯及(或)並聯形 成電通路，藉由打線方式電性連接如第二圖所示，而藉由覆晶方式電性連接則 請參閱第三_示，·接著树晶基板1G上設置—封裝層2()，㈣將電路層Η 及每-發光源18包覆，使電路層17及一發光源18不易受損，其中此封裝層2〇 係為石夕膠或環馳脂高分子聚合物，射發絲顧於自光照晴，則可在封 裝層之材料崎加螢光材料，另外可在設置絶緣層15之前，預先舖設一抗突波 導電線路（圖中未示），用以防止突波效應產生時損壞此封裝結構。 所以本創作時，請频第四圖所示，將㈣a基板1G的第二表面塗抹一 層導熱良好材料如導熱膠、散熱膏或低銲接溫度合金，再將石夕晶基板1〇設置在 -散熱裝置22上’此散熱裝置22可選自於散熱鰭片、鮮管、均熱板或以蒸 耽循壞為均熱原理之散熱裝置其中之-者。完成組裝後，將二電極端點16通以 適當之電源，使每-發光源18發光，發絲於發光過程產生之缝，將可以透 過石夕晶基板10傳導錄熱裝置22上，本創作藉由厚度薄(〇· lmm至G· 4腿)的石夕 晶基板10 ’使散熱效率提南，降低整體照明系統之熱阻嗜光源保持在較低的 溫度下，卫作壽命及發級率提升；另外，由⑨晶基板1G本雜膨服係數 小’使石夕sa基板10吸熱後不會產生撓曲現象，使發光源18透過在矽晶基板的 排列，可大幅提昇發光源之輔設密度，增加發光強度。 惟以上所述之實施例僅為本創作之較佳實施例，藉由實施例說明本創作之 特點，其目的在使熟習該技術者能暸解本創作之内容並據以實施，並非用以局 限本創作實狀細。舉凡運用摘料請專概騎述之構造、雜、特徵 及精神所為之均等變化及修飾，皆應包括於本創作申請專利之範圍内。 M270492 【圖式簡單說明】 第一圖為本創作之立體圖。 第二圖為本創作之LED與電路層打線方式連接剖面示意圖。 第三圖為本創作之LED與電路層覆晶方式連接剖面示意圖。 第四圖為本創作結合散熱鰭片之立體示意圖。 【主要元件符號說明】 10矽晶基板 12第一表面 14第二表面 15絶緣層 16電極端點 17電路層 18發光源 20封裝層 22散熱裝置LTCC) As a heat dissipation medium, in terms of McpcB, the thermal expansion coefficient of metal materials is much larger than that of LED chips. 'LED chips will generate internal stress due to temperature rise during operation, resulting in damage to the LED chips. ¥ Use co-firing l ^^ (LTCC) when the material is a carrier substrate, its price is high and it is not easy to add J1, and complex structures cannot be produced, and its guide energy can be far less than conventional metal thermal conductive materials. Therefore, how to solve the problems caused by the conventional technology is Difficulties that the industry urgently needs to address. # 钟 于此 ’In response to the above problems, this creation proposes an improvement of the light emitting diode packaging structure to effectively solve the above problems. [New content] The main purpose of this creation is to provide an improved light-emitting diode package structure. The silicon substrate made of M270492 lines is used to guide the power to each light-emitting diode. The material can effectively reduce the thickness of the substrate, coupled with the good thermal conductivity of the silicon material, it can effectively reduce the thermal resistance, thereby improving the heat dissipation efficiency. Another purpose of this creation is to provide an improved light-emitting diode package structure. By using a silicon substrate made of a thermal expansion coefficient close to that of a light-emitting diode chip, the substrate will not deflect after absorbing heat, thereby making the substrate less flexible. LE: D increases the density of the substrate. According to this creation, an improved light emitting diode package structure includes a silicon crystal substrate. This type of stone substrate has a first surface and a second surface. A circuit layer is provided on the first surface. The circuit layer is electrically connected to the two electrodes, and a plurality of light emitting sources are provided on the first surface of the silicon substrate. Each light source is electrically connected to the circuit layer, and a packaging layer is provided on the first surface of the silicon substrate. The circuit layer and each light source are covered. The following detailed description with specific examples and accompanying drawings will make it easier to understand the purpose, technical content, features and effects of this creation. [Embodiment] The present invention proposes a light-emitting diode package structure improvement. As shown in the first to third figures, it includes a silicon substrate 10, which can be ground to a thickness of 0 · in advance. i is deleted to 0.4 mm, and the readability of the Shi Xijing substrate 10 is P, N doped type crystals or carbon materials (good thermal conductivity materials such as Si0), and the crystalline substrate 10 has an H surface. 12 and _ the second surface 14, and an insulating layer 15 is provided on the first surface 12, and then the two electrode terminals 16 and the circuit layer 17 are provided on the insulating layer 15 of the first surface 12 of the Shi Xijing substrate 10. This circuit layer 17 can be used as a connection between light emitting sources 18 and for packaging and wiring. This circuit layer 17 will eventually be connected to the two electrode terminal 16 and a plurality of light emitting sources 18 are provided on the insulating layer 15 of the first surface 12. The light source 18 is a light-emitting diode, and each M270492 light source 18 is electrically connected to the circuit layer 17. Among them, each light source μ and the circuit layer I? Can be connected by a flip chip. Or wire bonding (wire bonding), Li Cai and (or) in parallel to form an electrical path, by wire bonding The sexual connection is shown in the second figure, and the electrical connection by the flip-chip method is shown in the third figure. Then, the tree substrate 1G is provided—the encapsulation layer 2 (). The source 18 is covered, so that the circuit layer 17 and a light-emitting source 18 are not easily damaged. The encapsulation layer 20 is made of stone gum or cyclopolymer polymer. The sealing layer is made of fluorescent material, and an anti-surge conductive line (not shown) can be laid in advance before the insulating layer 15 is installed to prevent damage to the packaging structure when the surge effect occurs. Please apply a layer of good thermally conductive material such as thermally conductive glue, thermal paste or low soldering temperature alloy to the second surface of ㈣a substrate 1G as shown in the fourth figure, and then set the Shi Xijing substrate 10 on the heat sink 22 'This heat sink 22 may be selected from one of heat sink fins, fresh tubes, soaking plates, or heat sinks based on the principle of steam soaking. After the assembly is completed, the two electrode terminals 16 are opened appropriately. The power source makes each light-emitting source 18 emit light, and the hair is in the seam produced by the light-emitting process. The thermal recording device 22 can be transmitted through the Shi Xijing substrate 10. In this work, the Shi Xijing substrate 10 'with a thin thickness (0.1 mm to G · 4 legs) is used to improve the heat dissipation efficiency and reduce the heat of the overall lighting system. The resistance light source is kept at a lower temperature, and the life and grade of the crop are improved. In addition, the small expansion coefficient of the crystalline substrate 1G makes the Shixi sa substrate 10 not absorb warping after heat absorption, so that By arranging the light source 18 on the silicon substrate, the auxiliary density of the light source can be greatly increased, and the luminous intensity can be increased. However, the embodiment described above is only a preferred embodiment of this creation. The characteristics are intended to enable those skilled in the art to understand and implement the content of this creation, not to limit the actual details of this creation. For example, any changes and modifications to the structure, miscellaneous, features, and spiritual behaviors that are specifically described in the excerpts should be included in the scope of this application for a patent. M270492 [Schematic description] The first picture is a three-dimensional view of the creation. The second figure is a schematic cross-sectional view of the connection between the LED and the circuit layer in the creation. The third figure is a schematic cross-sectional view of the connection between the LED and the circuit layer flip-chip method of the creation. The fourth image is a three-dimensional schematic view of the creation combined with the heat dissipation fins. [Description of main component symbols] 10 Silicon substrate 12 First surface 14 Second surface 15 Insulation layer 16 Electrode end 17 Circuit layer 18 Luminous source 20 Packaging layer 22 Heat sink

Claims (1)

M270492 九、申請專利範圍： 卜一種發光二極體封裝結構改良，包括： 一矽晶基板，其具有一第一表面及一第二表面，且在該第一表面上設有二 電極端點； 一電路層，其係設置在該矽晶基板之該第一表面上並與該二電極端點作電 性連接； 複數個發光源，其係設置在該矽晶基板之該第一表面，上且與該電路層形 成電性連接；以及 一封裝層，其係設置在該矽晶基板上，將該電路層及每一該發光源包覆。 2、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該等發光 源係為發光二極體(Light Emitting Diode)。 3、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該矽晶基 板之該第一表面更預先設置一絶緣層。 4、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該矽晶基 板之該第一表面設置該絶緣層之前，可預先舖設一抗突波電路於該第一表面 上，用以防此突波效應的損傷。 5、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該發光源 設置於該矽晶基板之方式係為打線(Wire Bonding)方式或覆晶(nip chip)接合 方式。 6、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該封裳層 之材料係為矽膠或環氧樹脂高分子聚合物。 7、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中，該發光源 M270492 應用於白光照明時，則可以在該封裝層之材料内添加螢光材料。 其中，該矽晶基 8、如申請專利範圍第1項所述之發光二極體封裝結構改良 板之第二表面上更可設置一散熱裝置。 9、 如申請專利範圍第8項所述之發光二極體封裝結構改 其中，該散熱裝 置係為散熱鰭片、熱導管、均熱板或以蒸氣循環為均熱原理之散埶 “、、衣置組合。 10、 如申請專利範圍第1項所述之發光二極體封裝結構改良，其中·· 卜料 板材質係為P或N摻雜型式之料晶或碳化雜iG)等導紐能良好之材夕曰曰基M270492 9. Scope of patent application: 1. An improved light emitting diode package structure includes: a silicon substrate having a first surface and a second surface, and two electrode terminals are provided on the first surface; A circuit layer is disposed on the first surface of the silicon substrate and is electrically connected to the ends of the two electrodes. A plurality of light emitting sources are disposed on the first surface of the silicon substrate. And forming an electrical connection with the circuit layer; and a packaging layer, which is disposed on the silicon substrate, and covers the circuit layer and each of the light sources. 2. The light emitting diode package structure improvement described in item 1 of the scope of patent application, wherein the light emitting sources are light emitting diodes. 3. The light-emitting diode package structure improvement as described in item 1 of the scope of the patent application, wherein the first surface of the silicon substrate is further provided with an insulating layer in advance. 4. The light emitting diode package structure improvement described in item 1 of the scope of patent application, wherein before the first surface of the silicon substrate is provided with the insulating layer, an anti-surge circuit can be laid on the first surface in advance. To prevent damage from this surge effect. 5. The light emitting diode package structure improvement described in item 1 of the scope of the patent application, wherein the way in which the light emitting source is arranged on the silicon substrate is a wire bonding method or a nip chip bonding method . 6. The light-emitting diode package structure improvement as described in item 1 of the scope of the patent application, wherein the material of the sealing layer is a silicon polymer or an epoxy polymer. 7. According to the improvement of the light emitting diode package structure described in item 1 of the scope of the patent application, where the light source M270492 is applied to white light illumination, a fluorescent material can be added to the material of the packaging layer. Among them, the silicon crystal base 8, as described in the first patent application scope of the light-emitting diode package structure improvement board on the second surface can further be provided with a heat sink. 9. According to the light-emitting diode package structure described in item 8 of the scope of the patent application, the heat dissipation device is a heat dissipation fin, a heat pipe, a heat equalizing plate, or a heat dissipation principle based on the principle of vapor circulation ",, Clothing set combination 10. The light emitting diode package structure improvement as described in item 1 of the scope of the patent application, where the material of the material board is a P or N doped type crystal or carbide iG) Good material
TW093215986U 2004-10-08 2004-10-08 Package structure improvement of LED TWM270492U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8536590B2 (en) 2010-06-01 2013-09-17 Advanced Optoelectronic Technology, Inc. Light emitting element package
US8884318B2 (en) 2010-02-27 2014-11-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus
TWI469395B (en) * 2012-02-03 2015-01-11 Lighten Corp Light-emitting module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884318B2 (en) 2010-02-27 2014-11-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus
US8536590B2 (en) 2010-06-01 2013-09-17 Advanced Optoelectronic Technology, Inc. Light emitting element package
TWI469395B (en) * 2012-02-03 2015-01-11 Lighten Corp Light-emitting module

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