TW201347244A - Integrated high efficiency multi-layer lighting device - Google Patents
Integrated high efficiency multi-layer lighting device Download PDFInfo
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- TW201347244A TW201347244A TW101116665A TW101116665A TW201347244A TW 201347244 A TW201347244 A TW 201347244A TW 101116665 A TW101116665 A TW 101116665A TW 101116665 A TW101116665 A TW 101116665A TW 201347244 A TW201347244 A TW 201347244A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/001—Arrangement of electric circuit elements in or on lighting devices the elements being electrical wires or cables
- F21V23/002—Arrangements of cables or conductors inside a lighting device, e.g. means for guiding along parts of the housing or in a pivoting arm
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
- F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
- F21V29/773—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
Description
一種照明裝置，尤其是一種可大幅減少螢光化合物及矽膠原料使用量，並提升發光亮度及均勻度的一體化高效率多層式照明裝置。The invention relates to a lighting device, in particular to an integrated high-efficiency multi-layer lighting device capable of greatly reducing the usage of fluorescent compounds and silicone materials, and improving the brightness and uniformity of light emission.
LED的發光原理是利用半導體固有特性，它不同於以往的白熾燈管的放電、發熱發光原理，而是將電流順向流入半導體的PN接面時便會發出光線，所以LED被稱為冷光源(cold light)。由於LED係具有耐久性、壽命長、輕巧、耗電量低且不含水銀等有害物質等之優點，故可廣泛應用於照明設備產業中，且其通常以LED陣列封裝方式應用在電子看板、交通號誌等商業領域。The principle of LED illumination is to use the inherent characteristics of semiconductors. It is different from the discharge and heat-emitting principle of incandescent lamps. Instead, it flows light when it flows into the PN junction of the semiconductor. Therefore, the LED is called a cold source. (cold light). LEDs are widely used in the lighting industry because of their durability, long life, light weight, low power consumption, and no harmful substances such as mercury. They are usually applied to electronic boards in LED array packaging. Traffic signs and other commercial areas.
現在製造的LED大部分是在LED的發光面上覆蓋一層含有螢光劑的螢光塗層製成的，以現有技術形成螢光塗層時，是先調製出一含有螢光劑的溶液，再將該溶液以充填、塗抹或滴的方式覆蓋住該發光面，藉由該螢光劑的作用可將LED晶片所發出的一第一色光部分轉換為一第二色光，該第一、第二色光相混合就能形成所要求的照明色光。Most of the LEDs manufactured today are made by coating a light-emitting surface of the LED with a fluorescent coating containing a fluorescent agent. When the fluorescent coating is formed by the prior art, a solution containing a fluorescent agent is prepared. And filling the solution with the light-emitting surface by filling, smearing or dripping, and converting the first color light portion emitted by the LED chip into a second color light by the action of the fluorescent agent, the first The second color of light is mixed to form the desired illumination color.
請參閱第1圖所示，習知技術之多層式陣列型發光二極體封裝結構之剖視圖，其包含有一基板10a、一封裝模塊12a、一導線架14a及一罩體16a，該基板10a設於該封裝結構之最下層，該封裝模塊12a用以將該基板10a與該導線架14a結合成一體，該基板10a上裝設有為陣列排列之發光二極體晶粒18a，上述的基板10a為金屬材質，發光二極體晶粒18a與該導線架14a藉打線接合形成電性連接，該罩體16a則與該封裝模塊12a相封合，其中發光二極體晶粒18a形成有一絕緣保護層20a，該絕緣保護層20a係包覆該等發光二極體晶粒18a，該絕緣保護層20a之上至少再形成一螢光層22a。Referring to FIG. 1 , a cross-sectional view of a multi-layer array type LED package structure of the prior art includes a substrate 10a, a package module 12a, a lead frame 14a and a cover 16a. The substrate 10a is provided. In the lowermost layer of the package structure, the package module 12a is used to integrate the substrate 10a with the lead frame 14a. The substrate 10a is provided with LED arrays 18a arranged in an array, and the substrate 10a is arranged. For the metal material, the LED die 18a is electrically connected to the lead frame 14a by wire bonding, and the cover 16a is sealed with the package module 12a, wherein the LED die 18a is formed with an insulation protection. The insulating layer 20a covers the light-emitting diode crystal grains 18a, and at least one fluorescent layer 22a is formed on the insulating protective layer 20a.
然而習知技術的缺點在於，為了能提高發光亮度，因此封裝模塊12a必須留設出可設置多個發光二極體晶粒18a的空間，但是卻必須使用大量的螢光化合物及矽膠原料，才能形成可均勻覆蓋發光二極體晶粒18a的絕緣保護層20a及螢光層22a，如此必導致原料成本大幅增加，此外發光二極體晶粒18a以陣列排列，雖然能增加發光亮度，但是在不同行列的發光二極體晶粒18a，其射出的光線入射至封裝模塊12a內壁面的角度不一致，因此反射出去的光線行進方式較易互相交錯，導致出光均勻度較差，因此必須提供一種能改善上述缺失的一體化高效率多層式照明裝置。However, a disadvantage of the prior art is that in order to increase the luminance of the light, the package module 12a must have a space in which a plurality of light-emitting diode crystal grains 18a can be disposed, but a large amount of fluorescent compound and silicone raw material must be used. Forming the insulating protective layer 20a and the fluorescent layer 22a which can uniformly cover the light-emitting diode crystal grains 18a, so that the raw material cost is greatly increased, and the light-emitting diode crystal grains 18a are arranged in an array, although the light-emitting brightness can be increased, but The light-emitting diode crystal grains 18a of different rows and columns have different angles of light incident on the inner wall surface of the package module 12a, so that the reflected light traveling modes are easily interlaced, resulting in poor uniformity of light output, and therefore it is necessary to provide an improvement. The above-mentioned missing integrated high efficiency multi-layer illuminating device.
本發明的主要目的在於提供一種一體化高效率多層式照明裝置，係包含有一散熱基座，係具有一基座頂部，該基座頂部開設出具有一容置空間之一腔室，該腔室具有一腔室底面，該腔室底面係開設出一溝槽，該溝槽具有相對應的兩內側壁面，該兩內側壁面皆設置成可將光線反射於該腔室之外的一傾斜面，該散熱基座並縱向貫設至少一個通道；複數個LED晶粒，係配置於該溝槽內，該等LED晶粒彼此之間相隔有一間距，該等LED晶粒彼此之間以打線接合方式構成電氣連接；以及一導線架，係安插於該至少一個通道中，該至少一個通道的兩端並分別封填有一密封膠，藉以固持該導線架，其中該導線架係由兩導線桿及一封裝套管組成，該兩導線桿係被封裝於該封裝套管之中，且該兩導線桿的兩端皆顯露於該封裝套管外，該兩導線桿與該等LED晶粒以打線接合方式構成電氣連接。The main object of the present invention is to provide an integrated high-efficiency multi-layer illuminating device, which comprises a heat dissipating pedestal having a pedestal top, and a top portion of the pedestal has a chamber having an accommodating space, the chamber Having a bottom surface of the chamber, the bottom surface of the chamber defines a groove having corresponding inner side wall surfaces, and the inner side wall surfaces are disposed to reflect light to an inclined surface outside the chamber. The heat dissipation base has a longitudinal direction of at least one channel; a plurality of LED dies are disposed in the trench, and the LED dies are spaced apart from each other by a wire bonding manner Forming an electrical connection; and a lead frame is inserted in the at least one channel, and the two ends of the at least one channel are respectively sealed with a sealant for holding the lead frame, wherein the lead frame is composed of two wire rods and one a package sleeve, the two wire rods are packaged in the package sleeve, and both ends of the two wire rods are exposed outside the package sleeve, and the two wire rods are wire-bonded with the LED dies the way Into electrical connection.
其中，一螢光層及一矽膠層係形成於該溝槽中，該溝槽係為一種細縫，因此只需要非常少的螢光化合物及矽膠即能填滿該溝槽，並均勻的覆蓋該等LED晶粒，大幅節省原料及製造成本。Wherein, a phosphor layer and a silicone layer are formed in the trench, and the trench is a slit, so that only a very small amount of fluorescent compound and silicone can fill the trench and uniformly cover the trench. These LED dies greatly save raw materials and manufacturing costs.
再者，當該等LED晶粒時該溝槽中設置出還可增加出光均勻度，因該等LED晶粒所射出的光線時入射至該溝槽的兩內側壁面的角度幾乎一致，因此反射出去的光線行進方向規則化，因有助於出光均勻度提升，因此本發明可解決習用技術的缺點，有效提升出光均勻度及減少螢光化合物及矽膠的用量。Furthermore, when the LED dies are arranged, the uniformity of the light is increased in the trenches, and the angles of the light incident from the LED dies are incident on the inner wall surfaces of the trenches, and the reflection is almost uniform. The direction of the outgoing light is regularized, which contributes to the improvement of the uniformity of the light emission. Therefore, the present invention can solve the disadvantages of the conventional technology, effectively improve the uniformity of light emission and reduce the amount of the fluorescent compound and the silicone.
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明，俾使熟習該項技藝者在研讀本說明書後能據以實施。The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;
參閱第二圖，本發明之一體化高效率多層式照明裝置之第一實施例示意圖。本發明係有關一種一體化高效率多層式照明裝置，其包含有散熱基座1、複數個LED晶粒3以及導線架5。Referring to the second figure, a schematic diagram of a first embodiment of the integrated high efficiency multi-layer illuminating device of the present invention is shown. The present invention relates to an integrated high efficiency multi-layer illuminating device comprising a heat dissipating pedestal 1, a plurality of LED dies 3 and a lead frame 5.
散熱基座1係具有基座頂部，在基座頂部的中心處開設出具有容置空間之腔室11，腔室11係具有腔室底部，沿著接近於或於腔室底部的周緣係開設出溝槽111，溝槽111內配置有該等LED晶粒3(Light Emitting Device,LED)，LED晶粒3彼此之間需相隔有一間距，LED晶粒3彼此之間以打線接合構成電氣連接，其中溝槽111的形成係透過銑削處理加工而成。The heat dissipation base 1 has a base top, and a chamber 11 having an accommodation space is formed at the center of the top of the base. The chamber 11 has a chamber bottom, and is opened along a periphery close to or at the bottom of the chamber. The LEDs 3 are arranged in the trenches 111, and the LED dies 3 are disposed at a distance from each other. The LED dies 3 are electrically connected to each other by wire bonding. Wherein the formation of the grooves 111 is processed by a milling process.
散熱基座1具有複數個散熱鰭片13，該等散熱鰭片13自散熱基座1的外側壁面以輻射狀排列方式向外延設而成，該等散熱鰭片13之間皆相隔有一間距，散熱鰭片13的兩側面的表面係呈高低起伏狀。The heat dissipation pedestal 1 has a plurality of heat dissipation fins 13 which are radially outwardly arranged from the outer wall surface of the heat dissipation pedestal 1. The heat dissipation fins 13 are spaced apart from each other by a distance therebetween. The surfaces of the two side faces of the heat dissipation fins 13 are undulating.
將LED晶粒3彼此之間皆相隔出間距，此間距可有效避免LED晶粒3因相隔過近而發生的熱蓄積效應，使每個LED晶粒3因發光而生的熱能可透過間距之間所營造的散熱空間，消除熱蓄積效能的產生，使熱能迅速的散逸出去。The LED dies 3 are separated from each other by a spacing, which can effectively avoid the heat accumulation effect of the LED dies 3 due to the close separation, so that the thermal energy generated by each of the LED dies 3 can be transmitted through the pitch. The space created by the heat dissipation eliminates the generation of heat accumulation and allows the heat to escape quickly.
溝槽111的具有相對應的兩內側壁面1111，兩內側壁面1111皆設置成可將所接收到的光線反射於腔室11之外的傾斜面，其中兩內側壁面1111與腔室底面之間所構成的夾角可介於10~80度之間。要注意的是，上述本發明的第一實施例中溝槽111設置成為環狀只是用以方便說明的實例而已，並不是用以限定本發明的範圍，亦即，本發明可依據實際應用需要而設置出適當形狀的溝槽。The groove 111 has corresponding inner wall surface 1111, and both inner wall surfaces 1111 are disposed to reflect the received light to the inclined surface outside the chamber 11, wherein the inner wall surface 1111 and the bottom surface of the chamber are The angle formed can be between 10 and 80 degrees. It should be noted that, in the first embodiment of the present invention, the groove 111 is provided in a ring shape only for the convenience of description, and is not intended to limit the scope of the present invention, that is, the present invention may be adapted to practical applications. Set the groove of the appropriate shape.
其中溝槽111的內壁面上可鍍上金屬反光層，以提高光線反射效果，金屬反光層的材質可以是銅、銀或其他適當的金屬材料。The inner wall surface of the groove 111 may be plated with a metal reflective layer to improve the light reflection effect. The material of the metal reflective layer may be copper, silver or other suitable metal material.
其中溝槽111的形狀可以是環形、四方形、長方形、三角形或其他適當的形狀。The shape of the groove 111 may be a ring shape, a square shape, a rectangle shape, a triangle shape or other suitable shape.
參閱第三圖，本發明之第一實施例之散熱基座剖視圖，參閱第四圖，本發明之第一實施例之散熱基座及導線架剖視圖。散熱基座1並縱向貫設有一個通道15，通道15的頂端及底端分別位於腔室底部及散熱基座1的底緣，導線架5可安插於通道中15，而通道15的兩端並分別封填有密封膠6藉以固持導線架5，並將通道15完全密封起來，還可避免微塵侵入及水氣滲入於腔室11中。其中上述的密封膠6可以是矽膠。Referring to the third embodiment, a cross-sectional view of a heat dissipation base according to a first embodiment of the present invention, and a fourth sectional view, a heat dissipation base and a lead frame of a first embodiment of the present invention are shown. The heat dissipation base 1 has a channel 15 extending longitudinally. The top end and the bottom end of the channel 15 are respectively located at the bottom of the chamber and the bottom edge of the heat dissipation base 1. The lead frame 5 can be inserted into the channel 15 and the two ends of the channel 15 The sealant 6 is sealed separately to hold the lead frame 5, and the passage 15 is completely sealed, and the intrusion of dust and the infiltration of moisture into the chamber 11 can be avoided. The sealant 6 described above may be silicone.
其中，導線架5係由兩導線桿51及封裝套管53組成，兩導線桿51係被封裝於封裝套管53中，兩導線桿51不得互相接觸，兩導線桿51的兩端皆顯露於封裝套管53外。封裝套管53的材質可以是聚鄰苯二甲醯胺(polyphthalamide,PPA)、聚醯胺9T(Polyamide 9T，PA9T)及液晶聚酯樹脂(liquid crystalline polyester resin,LCP)之至少其中之一。The lead frame 5 is composed of two wire rods 51 and a package sleeve 53. The two wire rods 51 are encapsulated in the package sleeve 53. The two wire rods 51 are not in contact with each other, and both ends of the two wire rods 51 are exposed. The outer sleeve 53 is packaged. The material of the package sleeve 53 may be at least one of polyphthalamide (PPA), polyamide 9T (Polyamide 9T, PA9T), and liquid crystalline polyester resin (LCP).
兩導線桿51的頂端以打線接合方式與該等LED晶粒3構成電氣連接，兩導線桿51的底端可分別與電源的正負極形成電氣連接，藉以傳輸驅動電壓於該等LED晶3令其發光。本發明的一較佳實施例中，係使用黃金導線施作打線接合。The top ends of the two wire rods 51 are electrically connected to the LED dies 3 by wire bonding. The bottom ends of the two wire rods 51 can be electrically connected to the positive and negative poles of the power source respectively, thereby transmitting a driving voltage to the LED crystals. It shines. In a preferred embodiment of the invention, a gold wire is used for wire bonding.
參閱第五圖，本發明之第一實施例之進一步設有螢光層及矽膠層示意圖。本發明可進一步形成有螢光層10及矽膠層20，螢光層10及矽膠層20係位於溝槽111中，螢光層10係覆蓋住該等LED晶粒3，確保該等LED晶粒3所發出的光線可通過螢光層10穿射出去，矽膠層20則設置於螢光層10之上，其中螢光層10及矽膠層20可透過填注及點膠等方式注入於溝槽111內部。螢光層10可與該等LED晶粒3所發出的光線進行混光作用，矽膠層20用以隔絕外界的溼氣及微塵進入螢光層10，較佳的，矽膠層20具有高穿透性的矽膠。Referring to the fifth figure, a first embodiment of the present invention is further provided with a schematic diagram of a phosphor layer and a silicone layer. The phosphor layer 10 and the tantalum layer 20 are further formed in the trench 111, and the phosphor layer 10 covers the LED crystal grains 3 to ensure the LED crystal grains. The emitted light can be emitted through the phosphor layer 10. The silicone layer 20 is disposed on the phosphor layer 10. The phosphor layer 10 and the silicone layer 20 can be injected into the trench through filling and dispensing. 111 inside. The phosphor layer 10 can be mixed with the light emitted by the LED crystals 3. The silicone layer 20 is used to insulate the outside moisture and fine dust from entering the phosphor layer 10. Preferably, the silicone layer 20 has high penetration. Sexual silicone.
其中，該溝槽111係概呈一種細縫，因此只需要非常少的螢光化合物及矽膠即能填滿該溝槽，並均勻的覆蓋該等LED晶粒3，因此大幅節省原料及製造成本。Wherein, the groove 111 is a kind of slit, so that only a very small amount of fluorescent compound and silicone can fill the groove and uniformly cover the LED crystal 3, thereby greatly saving raw materials and manufacturing costs. .
此外，本發明還可使用透鏡罩30，透鏡罩30係罩蓋且固設於腔室11之上，讓腔室11的內部空間形成密閉狀態，藉以隔絕外界溼氣及微塵進入腔室11中。In addition, the lens cover 30 can be used in the present invention. The lens cover 30 is covered and fixed on the chamber 11 to form a sealed state of the internal space of the chamber 11 to isolate external moisture and fine dust from entering the chamber 11. .
參閱第六圖，本發明之一體化高效率多層式照明裝置之第二實施例示意圖。第二實施例的結構大致上與第一實施例結構相同，但在第二實施例的散熱基座1中係縱向貫設有相鄰的兩通道15，兩通道15中分別可安插一個導線架5，但第二實施例中的導線架5只於封裝套管53中封裝一個導線桿51，如第六圖所示。Referring to the sixth figure, a schematic view of a second embodiment of the integrated high efficiency multi-layer illuminating device of the present invention is shown. The structure of the second embodiment is substantially the same as that of the first embodiment. However, in the heat dissipation base 1 of the second embodiment, two adjacent channels 15 are longitudinally disposed, and a lead frame can be inserted in each of the two channels 15. 5, but the lead frame 5 in the second embodiment only encloses one wire rod 51 in the package sleeve 53, as shown in the sixth figure.
參閱第七圖，本發明之一體化高效率多層式照明裝置之第三實施例示意圖，參閱第八圖，第八圖為第七圖的側面示意圖。第七圖係顯示一種平板式的散熱基座1，散熱基座1的中心部份的厚度係大於其外側部份的厚度，且於散熱基座1的底面朝下設置出複數個呈間隔排列的散熱鰭片13，其中該等散熱鰭片13之位在外側部份的散熱鰭片13長度係大於其設在中心部份的散熱鰭片13長度，較佳的散熱鰭片13配置方式可參閱第七圖，令散熱鰭片13的自由端皆呈現相互齊平狀。Referring to the seventh figure, a schematic diagram of a third embodiment of the integrated high-efficiency multi-layer illuminating device of the present invention is shown in the eighth figure, and the eighth figure is a side view of the seventh figure. The seventh figure shows a flat-type heat sink base 1. The thickness of the central portion of the heat sink base 1 is greater than the thickness of the outer portion, and a plurality of spacers are arranged downwardly on the bottom surface of the heat sink base 1. The heat dissipating fins 13 are disposed in the outer portion of the heat dissipating fins 13 in a length greater than the length of the heat dissipating fins 13 disposed in the central portion, and the preferred fins 13 are disposed. Referring to the seventh figure, the free ends of the heat dissipation fins 13 are flush with each other.
其中位於外側部份的散熱鰭片13的表面呈高低起伏狀，如此可增加散熱鰭片13的散熱表面積，藉以快速的消散熱能，當然也可使全部的散熱鰭片13的表面形成高低起伏狀，使散熱鰭片13的散熱效果及散熱速度更好。The surface of the heat dissipating fin 13 on the outer portion is undulating, so that the heat dissipating surface area of the heat dissipating fin 13 can be increased, so that the heat dissipating energy can be quickly dissipated, and of course, the surface of all the heat dissipating fins 13 can be formed with high and low undulations. The heat dissipation fins 13 have better heat dissipation and heat dissipation speed.
再者，散熱基座1主體的中心部份的厚度大於其外側部份的厚度，使散熱基座1主體的中心部份具有高結構強度，進而可設置出腔室11、通道15及溝槽111等結構，第三實施例除散熱鰭片13與第一實施例有所不同，其餘結構可參閱前文所述，在此不於贅述。Furthermore, the thickness of the central portion of the main body of the heat dissipation base 1 is greater than the thickness of the outer portion thereof, so that the central portion of the main body of the heat dissipation base 1 has a high structural strength, and thus the chamber 11, the channel 15, and the groove can be disposed. For the structure of the first embodiment, the third embodiment is different from the first embodiment. The rest of the structure can be referred to the foregoing description, and details are not described herein.
從第三實施例可知，本發明所揭露出的腔室11、通道15及溝槽111等結構，可直接設置於不同型式的散熱基座1上，因此以上所述的各實施例只是用以方便說明的實施例而已，並不是用以限定本發明的範圍。It can be seen from the third embodiment that the structures of the chamber 11, the channel 15 and the trench 111 disclosed in the present invention can be directly disposed on different types of heat dissipation pedestals 1. Therefore, the embodiments described above are only used for The embodiments described are for convenience and are not intended to limit the scope of the invention.
參閱第九圖，本發明之一體化高效率多層式照明裝置之第四實施例示意圖。第四實施例的結構大致上與第三實施例結構相同，但在第三實施例的散熱基座1中係縱向貫設有相對應的兩通道15，兩通道15中分別可安插一個導線架5，但第四實施例中的導線架5只於封裝套管53中封裝一個導線桿51，如第八圖所示。Referring to the ninth drawing, a schematic view of a fourth embodiment of the integrated high efficiency multi-layer illuminating device of the present invention is shown. The structure of the fourth embodiment is substantially the same as that of the third embodiment. However, in the heat dissipation base 1 of the third embodiment, two corresponding passages 15 are longitudinally disposed, and one lead frame can be inserted in each of the two passages 15. 5, but the lead frame 5 in the fourth embodiment only encloses one wire rod 51 in the package sleeve 53, as shown in the eighth figure.
如前文所述，本發明透過將該螢光層10及該矽膠層20設置於容積率很小的該溝槽111中，因此可大幅減少螢光化合物及矽膠等原料的用量，節省製造成本。As described above, in the present invention, since the phosphor layer 10 and the silicone layer 20 are provided in the trench 111 having a small volume ratio, the amount of the fluorescent compound and the raw material such as silicone can be greatly reduced, and the manufacturing cost can be saved.
除此之外，當該等LED晶粒3時該溝槽中111設置出還可增加出光均勻度，因為該等LED晶粒3所射出的光線時入射至該溝槽111的兩內側壁面1111的角度幾乎一致，因此反射出去的光線行進方向也會比較一致且規則，如此有助於出光均勻度的提升，因此本發明可解決習用技術的缺點，有效提升出光均勻度及節省製造成本。In addition, when the LED dies 3 are arranged, the grooves 111 are arranged to increase the light uniformity, because the light emitted by the LED dies 3 is incident on the inner wall surfaces 1111 of the trenches 111. The angle of the light is almost the same, so the direction of the reflected light will be relatively uniform and regular, thus contributing to the improvement of the uniformity of the light. Therefore, the present invention can solve the shortcomings of the conventional technology, effectively improve the uniformity of light emission and save manufacturing costs.
以上所述者僅為用以解釋本發明之較佳實施例，並非企圖據以對本發明做任何形式上之限制，是以，凡有在相同之發明精神下所作有關本發明之任何修飾或變更，皆仍應包括在本發明意圖保護之範疇。The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.
1．．．散熱基座1. . . Cooling base
11．．．腔室11. . . Chamber
111．．．溝槽111. . . Trench
1111．．．內側壁面1111. . . Inner wall surface
13．．．散熱鰭片13. . . Heat sink fin
15．．．通道15. . . aisle
3．．．LED晶粒3. . . LED die
5．．．導線架5. . . Lead frame
51．．．導線桿51. . . Wire rod
53．．．封裝套管53. . . Package casing
6．．．黏膠6. . . Viscose
10．．．螢光層10. . . Fluorescent layer
20．．．矽膠層20. . . Silicone layer
30．．．透鏡罩30. . . Lens cover
10a．．．基板10a. . . Substrate
12a．．．封裝模塊12a. . . Package module
14a．．．導線架14a. . . Lead frame
16a．．．罩體16a. . . Cover
18a．．．發光二極體晶粒18a. . . Light-emitting diode grain
20a．．．絕緣保護層20a. . . Insulating protective layer
22a．．．螢光層22a. . . Fluorescent layer
第一圖為習知技術之多層式陣列型發光二極體封裝結構之剖視圖。The first figure is a cross-sectional view of a multilayer array type light emitting diode package structure of the prior art.
第二圖為本發明之一體化高效率多層式照明裝置之第一實施例示意圖。The second figure is a schematic view of a first embodiment of the integrated high efficiency multi-layer illumination device of the present invention.
第三圖為本發明之第一實施例之散熱基座剖視圖。The third figure is a cross-sectional view of the heat dissipation base of the first embodiment of the present invention.
第四圖為本發明之第一實施例之散熱基座及導線架剖視圖。The fourth figure is a cross-sectional view of the heat dissipation base and the lead frame of the first embodiment of the present invention.
第五圖為本發明之第一實施例之進一步設有螢光層及矽膠層示意圖。The fifth figure is a schematic view of further providing a phosphor layer and a silicone layer according to the first embodiment of the present invention.
第六圖為本發明之一體化高效率多層式照明裝置之第二實施例示意圖。Figure 6 is a schematic view of a second embodiment of the integrated high efficiency multi-layer illuminating device of the present invention.
第七圖為本發明之一體化高效率多層式照明裝置之第三實施例示意圖。Figure 7 is a schematic view of a third embodiment of the integrated high efficiency multi-layer illuminating device of the present invention.
第八圖為第七圖的側面示意圖。The eighth figure is a side view of the seventh figure.
第九圖為本發明之一體化高效率多層式照明裝置之第四實施例示意圖。Figure 9 is a schematic view of a fourth embodiment of the integrated high efficiency multi-layer illumination device of the present invention.
1．．．散熱基座1. . . Cooling base
11．．．腔室11. . . Chamber
111．．．溝槽111. . . Trench
1111．．．內側壁面1111. . . Inner wall surface
13．．．散熱鰭片13. . . Heat sink fin
15．．．通道15. . . aisle
3．．．LED晶粒3. . . LED die
51．．．導桿51. . . Guide rod
Claims (13)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101116665A TW201347244A (en) | 2012-05-10 | 2012-05-10 | Integrated high efficiency multi-layer lighting device |
| JP2012223119A JP2013236047A (en) | 2012-05-10 | 2012-10-05 | Integral high efficiency multilayer type lighting device |
| KR1020120114027A KR101401919B1 (en) | 2012-05-10 | 2012-10-15 | Lighting device of multi level type for integrated high-efficiency |
| DE202013100293U DE202013100293U1 (en) | 2012-05-10 | 2013-01-22 | Integrally formed high efficiency multilayer light emitting device |
| DE201310100611 DE102013100611A1 (en) | 2012-05-10 | 2013-01-22 | Integrally-formed multi-layer light emitting device has lead frame with conductive rods arranged in sleeve, so that rod ends are extended from sleeve, and rods are connected to light emitting chip by metal-wire bonding |
| MYUI2013700153A MY164690A (en) | 2012-05-10 | 2013-01-25 | Integrally formed high-efficient multi-layer light-emitting device |
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| TW101116665A TW201347244A (en) | 2012-05-10 | 2012-05-10 | Integrated high efficiency multi-layer lighting device |
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| TW201347244A true TW201347244A (en) | 2013-11-16 |
| TWI470841B TWI470841B (en) | 2015-01-21 |
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| JP (1) | JP2013236047A (en) |
| KR (1) | KR101401919B1 (en) |
| DE (2) | DE102013100611A1 (en) |
| MY (1) | MY164690A (en) |
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| JP6115826B2 (en) * | 2013-11-26 | 2017-04-19 | 東芝ライテック株式会社 | Lighting equipment for moving objects |
| JP6467206B2 (en) * | 2014-01-28 | 2019-02-06 | 株式会社小糸製作所 | Light source unit |
| CN103899955A (en) * | 2014-03-14 | 2014-07-02 | 魏百远 | Efficient-heat-dissipation LED module structure |
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| JP2008311471A (en) * | 2007-06-15 | 2008-12-25 | Toyoda Gosei Co Ltd | Light emitting device |
| KR100705011B1 (en) | 2005-08-31 | 2007-04-13 | 바이오닉스(주) | light emitting apparatus |
| TW200725940A (en) * | 2005-12-29 | 2007-07-01 | Anteya Technology Corp | LED package structure |
| KR101210090B1 (en) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | Metal core printed circuit board and light-emitting diode packaging method thereof |
| KR100714749B1 (en) | 2006-03-21 | 2007-05-04 | 삼성전자주식회사 | Light emitting device packaging module and method of manufacturing the same |
| KR101048440B1 (en) | 2010-04-29 | 2011-07-11 | 금호전기주식회사 | Heat sink capable of variably mounting led module and illumination device using the same |
| JP3162599U (en) * | 2010-06-25 | 2010-09-09 | 李家茂 | Ring package structure |
| KR101054305B1 (en) | 2010-12-30 | 2011-08-08 | 금강전기 (주) | Led lighting unit and manufacturing method thereof |
| TWM409367U (en) * | 2011-01-28 | 2011-08-11 | Fin Core Corp | Heat-dissipation module and LED lamp having heat-dissipation module |
| TWM424620U (en) * | 2011-08-03 | 2012-03-11 | Gem Weltronics Twn Corp | Multi-layer array type LED light engine structure improvement |
| TWM422041U (en) * | 2011-09-16 | 2012-02-01 | Zi-Hua Chen | High-power lightweight LED bulb |
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| TWI470841B (en) | 2015-01-21 |
| DE202013100293U1 (en) | 2013-03-11 |
| KR20130126434A (en) | 2013-11-20 |
| MY164690A (en) | 2018-01-30 |
| JP2013236047A (en) | 2013-11-21 |
| KR101401919B1 (en) | 2014-06-27 |
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