JP5175488B2 - 多層反射面構造を有するledパッケージ - Google Patents
多層反射面構造を有するledパッケージ Download PDFInfo
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- JP5175488B2 JP5175488B2 JP2007111482A JP2007111482A JP5175488B2 JP 5175488 B2 JP5175488 B2 JP 5175488B2 JP 2007111482 A JP2007111482 A JP 2007111482A JP 2007111482 A JP2007111482 A JP 2007111482A JP 5175488 B2 JP5175488 B2 JP 5175488B2
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- substrate
- reflective surface
- light source
- multilayer reflective
- led package
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 80
- 238000007743 anodising Methods 0.000 claims description 21
- 238000000465 moulding Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229920006336 epoxy molding compound Polymers 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000287463 Phalacrocorax Species 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Description
本発明による多層反射面構造を有するLEDパッケージ1は、図2に図示された通り、アルミニウム材料からなる基板10が提供される。上記基板10は、相対的に低価かつ製作が容易なアルミニウム材料である。
10 アルミニウム基板
12a、12b、13a、13b 電極パターン
16 貫通孔(Via)
20 光源
30 反射面
32 中央反射面
34a、34b 傾斜反射面
35 アノダイジング絶縁層
40 ワイヤ
70 モールディング部
300 従来のLEDパッケージ
310 基板
315 LED素子
320 反射部材
322 反射面(reflector)
Claims (3)
- アルミニウム材料で一体に形成され、表面に凹空間が形成され、前記凹空間の側面に中間段差を有し、前記側面の前記中間段差、前記中間段差と上面との間の1次傾斜反射面、前記中間段差と中央反射面との間の2次傾斜反射面、並びに、前記中央反射面に、光を反射する多層反射面が形成された基板と、
前記基板の上部および下部面に形成された電極パターンと、
前記凹空間の前記中央反射面に形成された前記反射面上に装着され、前記電極パターンに電気的に連結された光源と、
前記電極パターンと前記基板との間に形成されたアノダイジング絶縁層と、
前記基板の前記光源を覆うモールディング部と、を含み、
前記基板の少なくとも一つのコーナーに、前記基板を貫通する貫通孔が形成され、前記基板の上部に形成された前記電極パターンが、前記貫通孔を通じて、前記基板の下部面に形成された前記電極パターンに電気的に連結され、
前記基板は、前記光源のLED素子の下部において優れた伝熱特性の放熱領域を形成するものであり、
前記LED素子は前記多層反射面の前記中央反射面と接し、
前記LED素子の下部面端子は前記基板に安着されており、かつ、前記基板と電気的に導通し、
前記中間段差は上部平面視において円周形状を有し、前記中間段差の一部には円周に沿って円弧形状の、ワイヤを通じて前記光源に電気的に連結される配線が形成されていることを特徴とする多層反射面構造を有するLEDパッケージ。 - 前記多層反射面は、反射率が優れた金属である銀(Ag)がコーティング処理されたことを特徴とする請求項1に記載の多層反射面構造を有するLEDパッケージ。
- 前記貫通孔の表面は、ニッケル、銅、金および銀の少なくとも一つでめっき処理されていることを特徴とする請求項1又は2に記載の多層反射面構造を有するLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0036099 | 2006-04-21 | ||
KR1020060036099A KR100735310B1 (ko) | 2006-04-21 | 2006-04-21 | 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011156645A Division JP2011205147A (ja) | 2006-04-21 | 2011-07-15 | Ledパッケージの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294966A JP2007294966A (ja) | 2007-11-08 |
JP5175488B2 true JP5175488B2 (ja) | 2013-04-03 |
Family
ID=38503145
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007111482A Active JP5175488B2 (ja) | 2006-04-21 | 2007-04-20 | 多層反射面構造を有するledパッケージ |
JP2011156645A Pending JP2011205147A (ja) | 2006-04-21 | 2011-07-15 | Ledパッケージの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011156645A Pending JP2011205147A (ja) | 2006-04-21 | 2011-07-15 | Ledパッケージの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7547923B2 (ja) |
JP (2) | JP5175488B2 (ja) |
KR (1) | KR100735310B1 (ja) |
CN (1) | CN100530727C (ja) |
TW (1) | TWI381559B (ja) |
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KR101012318B1 (ko) * | 2008-04-01 | 2011-02-09 | 충남대학교산학협력단 | 엘이디와 광섬유가 결합된 발광장치 |
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JP2007294966A (ja) | 2007-11-08 |
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US8586128B2 (en) | 2013-11-19 |
US20070246715A1 (en) | 2007-10-25 |
KR100735310B1 (ko) | 2007-07-04 |
CN101060159A (zh) | 2007-10-24 |
JP2011205147A (ja) | 2011-10-13 |
US7547923B2 (en) | 2009-06-16 |
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