JP7194518B2 - 電子部品、電子部品の製造方法、電子装置 - Google Patents
電子部品、電子部品の製造方法、電子装置 Download PDFInfo
- Publication number
- JP7194518B2 JP7194518B2 JP2018104831A JP2018104831A JP7194518B2 JP 7194518 B2 JP7194518 B2 JP 7194518B2 JP 2018104831 A JP2018104831 A JP 2018104831A JP 2018104831 A JP2018104831 A JP 2018104831A JP 7194518 B2 JP7194518 B2 JP 7194518B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electronic component
- edge
- resin portion
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title description 9
- 229920005989 resin Polymers 0.000 claims description 76
- 239000011347 resin Substances 0.000 claims description 76
- 239000004020 conductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000465 moulding Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000001721 transfer moulding Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structure Of Printed Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
[電子部品の構成]
[電子部品の製造方法]
[作用及び効果]
Claims (14)
- 第1表面と、前記第1表面とは反対側の第2表面と、前記第1表面及び前記第2表面に接続された側面と、前記側面に形成され、前記第1表面から前記第2表面まで延在する溝部と、を有する配線基板と、
前記第1表面に沿って前記第1表面に配置された第1電極と、
前記第2表面に沿って前記第2表面に配置された第2電極と、
前記溝部の内面の全面にわたって配置され、前記第1電極及び前記第2電極に電気的に接続された接続導体と、
前記第1表面に配置され、前記第1電極に電気的に接続された電子素子と、
前記第1表面に配置され、前記電子素子、及び前記第1電極の少なくとも一部を覆う樹脂部と、を備え、
前記第2電極の縁の全ては、前記側面から離間している、電子部品。 - 前記第1電極の縁の全ては、前記側面から離間している、請求項1に記載の電子部品。
- 前記溝部の半径は、0.5mm以下である、請求項1又は2に記載の電子部品。
- 前記樹脂部は、エポキシ樹脂からなる、請求項1~3のいずれか一項に記載の電子部品。
- 前記第1表面は、矩形状を呈しており、
前記樹脂部は、前記第1表面における一の縁から前記一の縁とは反対側の他の縁まで延在している、請求項1~4のいずれか一項に記載の電子部品。 - 前記第1電極は、前記樹脂部の縁に沿って延在する延在部を有している、請求項1~5のいずれか一項に記載の電子部品。
- 前記溝部は、前記第1表面及び前記第2表面の角部に配置されている、請求項1~6のいずれか一項に記載の電子部品。
- 前記溝部は、前記第1表面及び前記第2表面の角部から離間して配置されている、請求項1~6のいずれか一項に記載の電子部品。
- 前記電子素子は、発光素子であり、
前記樹脂部は、レンズ部を有している、請求項1~8のいずれか一項に記載の電子部品。 - 第1表面と、前記第1表面とは反対側の第2表面と、前記第1表面及び前記第2表面に開口する貫通孔と、を有する配線基板を用意する第1ステップと、
前記第1ステップの後に、前記第1表面に沿って前記第1表面に配置された第1電極、前記第2表面に沿って前記第2表面に配置された第2電極、並びに、前記貫通孔の内面の全面にわたって配置され、前記第1電極及び前記第2電極に電気的に接続された接続導体を形成する第2ステップと、
前記第2ステップの後に、前記第1表面に電子素子を配置し、前記電子素子と前記第1電極とを互いに電気的に接続する第3ステップと、
前記第3ステップの後に、少なくとも前記電子素子及び前記電子素子と前記第1電極との接続部を覆う樹脂部を前記第1表面に形成する第4ステップと、
前記第4ステップの後に、前記貫通孔を通るカットラインにおいて前記配線基板を前記第1表面側から切断することにより、電子部品を得る第5ステップと、を備え、
前記第2ステップでは、前記カットラインから離間した前記第2電極を形成する、電子部品の製造方法。 - 前記第4ステップでは、トランスファモールドにより前記樹脂部を形成する、請求項10に記載の電子部品の製造方法。
- 前記第2ステップでは、前記樹脂部の形成予定領域の縁に沿って延在する延在部を有する前記第1電極を形成し、
前記第4ステップでは、前記樹脂部を形成するための成形型によって前記延在部を押圧しつつ、前記樹脂部を形成する、請求項10又は11に記載の電子部品の製造方法。 - 前記第5ステップでは、ブレードダイシングにより前記配線基板を切断する、請求項10~12のいずれか一項に記載の電子部品の製造方法。
- 請求項1~9のいずれか一項に記載の電子部品と、
実装電極を有し、前記電子部品が実装された実装基板と、を備え、
前記第2電極が半田により前記実装電極に電気的に接続されている、電子装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018104831A JP7194518B2 (ja) | 2018-05-31 | 2018-05-31 | 電子部品、電子部品の製造方法、電子装置 |
DE112019002706.9T DE112019002706T5 (de) | 2018-05-31 | 2019-03-27 | Elektronikkomponente, Herstellungsverfahren der Elektronikkomponente und elektronisches Gerät |
KR1020207025807A KR20210015751A (ko) | 2018-05-31 | 2019-03-27 | 전자 부품, 전자 부품의 제조 방법, 전자 장치 |
PCT/JP2019/013394 WO2019230172A1 (ja) | 2018-05-31 | 2019-03-27 | 電子部品、電子部品の製造方法、電子装置 |
US17/040,774 US11462667B2 (en) | 2018-05-31 | 2019-03-27 | Electronic component, method of manufacturing electronic component, and electronic device |
TW108113729A TWI827595B (zh) | 2018-05-31 | 2019-04-19 | 電子零件、電子零件之製造方法、電子裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018104831A JP7194518B2 (ja) | 2018-05-31 | 2018-05-31 | 電子部品、電子部品の製造方法、電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019212665A JP2019212665A (ja) | 2019-12-12 |
JP7194518B2 true JP7194518B2 (ja) | 2022-12-22 |
Family
ID=68697961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018104831A Active JP7194518B2 (ja) | 2018-05-31 | 2018-05-31 | 電子部品、電子部品の製造方法、電子装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11462667B2 (ja) |
JP (1) | JP7194518B2 (ja) |
KR (1) | KR20210015751A (ja) |
DE (1) | DE112019002706T5 (ja) |
TW (1) | TWI827595B (ja) |
WO (1) | WO2019230172A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289746A (ja) | 2001-03-28 | 2002-10-04 | Kyocera Corp | 多数個取り電子部品搭載用基板および電子装置 |
JP2002299517A (ja) | 2001-04-03 | 2002-10-11 | Fujitsu Ltd | 半導体装置用基板及び半導体装置の製造方法 |
JP2003204081A (ja) | 2002-01-08 | 2003-07-18 | Rohm Co Ltd | 半導体発光装置 |
JP2010040826A (ja) | 2008-08-06 | 2010-02-18 | Panasonic Corp | 半導体チップおよびその製造方法 |
JP2010165991A (ja) | 2009-01-19 | 2010-07-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2013102114A (ja) | 2011-10-13 | 2013-05-23 | Nichia Chem Ind Ltd | 半導体装置 |
JP2016034092A (ja) | 2014-07-31 | 2016-03-10 | 京セラクリスタルデバイス株式会社 | 電子デバイスの製造方法及び電子デバイス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0793338B2 (ja) * | 1985-11-11 | 1995-10-09 | スタンレー電気株式会社 | ミニモールド型ledの製造方法 |
JP3140274B2 (ja) | 1993-09-24 | 2001-03-05 | 三菱電機株式会社 | 時空間データ管理装置 |
KR100735310B1 (ko) * | 2006-04-21 | 2007-07-04 | 삼성전기주식회사 | 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법 |
TWM312774U (en) * | 2006-11-17 | 2007-05-21 | Bo-Wu Lin | Non-polar surface adhesive LED |
US8421093B2 (en) * | 2007-07-13 | 2013-04-16 | Rohm Co., Ltd. | LED module and LED dot matrix display |
JP2008153698A (ja) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 面実装型光電変換装置 |
TWM350830U (en) * | 2008-10-09 | 2009-02-11 | Wen-Zong Zheng | Packaging structure of surface mount type LED |
CN104979338B (zh) * | 2014-04-10 | 2018-07-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构 |
JP7086536B2 (ja) * | 2017-07-26 | 2022-06-20 | 京セラ株式会社 | 電子素子実装用基板、電子装置および電子モジュール |
-
2018
- 2018-05-31 JP JP2018104831A patent/JP7194518B2/ja active Active
-
2019
- 2019-03-27 KR KR1020207025807A patent/KR20210015751A/ko not_active Application Discontinuation
- 2019-03-27 US US17/040,774 patent/US11462667B2/en active Active
- 2019-03-27 DE DE112019002706.9T patent/DE112019002706T5/de active Pending
- 2019-03-27 WO PCT/JP2019/013394 patent/WO2019230172A1/ja active Application Filing
- 2019-04-19 TW TW108113729A patent/TWI827595B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002289746A (ja) | 2001-03-28 | 2002-10-04 | Kyocera Corp | 多数個取り電子部品搭載用基板および電子装置 |
JP2002299517A (ja) | 2001-04-03 | 2002-10-11 | Fujitsu Ltd | 半導体装置用基板及び半導体装置の製造方法 |
JP2003204081A (ja) | 2002-01-08 | 2003-07-18 | Rohm Co Ltd | 半導体発光装置 |
JP2010040826A (ja) | 2008-08-06 | 2010-02-18 | Panasonic Corp | 半導体チップおよびその製造方法 |
JP2010165991A (ja) | 2009-01-19 | 2010-07-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2013102114A (ja) | 2011-10-13 | 2013-05-23 | Nichia Chem Ind Ltd | 半導体装置 |
JP2016034092A (ja) | 2014-07-31 | 2016-03-10 | 京セラクリスタルデバイス株式会社 | 電子デバイスの製造方法及び電子デバイス |
Also Published As
Publication number | Publication date |
---|---|
KR20210015751A (ko) | 2021-02-10 |
TWI827595B (zh) | 2024-01-01 |
US11462667B2 (en) | 2022-10-04 |
US20210005801A1 (en) | 2021-01-07 |
JP2019212665A (ja) | 2019-12-12 |
WO2019230172A1 (ja) | 2019-12-05 |
TW202005025A (zh) | 2020-01-16 |
DE112019002706T5 (de) | 2021-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100486400B1 (ko) | 고주파 모듈 및 그 제조 방법 | |
WO2011111318A1 (ja) | モジュール | |
US7273765B2 (en) | Solid-state imaging device and method for producing the same | |
JP3907145B2 (ja) | チップ電子部品 | |
KR101922191B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
TWI399145B (zh) | 配線電路基板及其製造方法 | |
US9491867B2 (en) | Wiring substrate and multi-piece wiring substrate | |
JP7194518B2 (ja) | 電子部品、電子部品の製造方法、電子装置 | |
US7443043B2 (en) | Circuit device and method of manufacture thereof | |
JP7147501B2 (ja) | 半導体装置の製造方法 | |
US6218628B1 (en) | Foil circuit boards and semifinished products and method for the manufacture thereof | |
JP2008098247A (ja) | 発光ダイオードパッケージ | |
JP6336898B2 (ja) | 多数個取り配線基板、配線基板および電子装置 | |
CN111226509B (zh) | 基板集合体片材 | |
JP2006185965A (ja) | 多数個取り配線基板および電子装置 | |
JP6282959B2 (ja) | 多数個取り配線基板、配線基板および電子装置 | |
TW202249039A (zh) | 晶片電阻器及晶片電阻器之製造方法 | |
JP2017085069A (ja) | 集合配線基板の製造方法 | |
WO2020066665A1 (ja) | 配線基板および電気装置 | |
TW202249038A (zh) | 晶片零件 | |
JP2024005589A (ja) | 配線基板及び配線基板の製造方法 | |
JP2014060354A (ja) | 多数個取り配線基板および配線基板 | |
JP2003283067A (ja) | 多数個取り配線基板 | |
JP2000012995A (ja) | 回路基板に対する端子部品の取付け装置 | |
JP2009231743A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220719 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7194518 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |