WO2011019132A1 - Adhésif conducteur, procédé de montage d’un semi-conducteur faisant appel à cet adhésif, et encapsulation sur tranches - Google Patents

Adhésif conducteur, procédé de montage d’un semi-conducteur faisant appel à cet adhésif, et encapsulation sur tranches Download PDF

Info

Publication number
WO2011019132A1
WO2011019132A1 PCT/KR2010/002390 KR2010002390W WO2011019132A1 WO 2011019132 A1 WO2011019132 A1 WO 2011019132A1 KR 2010002390 W KR2010002390 W KR 2010002390W WO 2011019132 A1 WO2011019132 A1 WO 2011019132A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive
adhesive
particles
insulating resin
conductive adhesive
Prior art date
Application number
PCT/KR2010/002390
Other languages
English (en)
Korean (ko)
Inventor
김종민
김주헌
박수현
임병승
Original Assignee
중앙대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090075214A external-priority patent/KR101182714B1/ko
Priority claimed from KR1020090110523A external-priority patent/KR101637401B1/ko
Application filed by 중앙대학교 산학협력단 filed Critical 중앙대학교 산학협력단
Publication of WO2011019132A1 publication Critical patent/WO2011019132A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0263—Details about a collection of particles
    • H05K2201/0272—Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder

Definitions

  • the present invention relates to a conductive adhesive, and more particularly, to ensure sufficient electrical connection between terminals, such as terminals facing each other, and to conventional soldering through metallurgical bonding by melting conductive materials between terminals. Low electrical resistance of the same degree can be obtained, sufficient insulation between adjacent terminals can be applied to ultra-fine pitch, excellent repair characteristics, especially conductive adhesive with improved heat dissipation, semiconductor mounting method and wafer level using the same It's about packages.
  • a conductive adhesive disperses conductive particles such as metals in a resin, and is an electrode bonding material capable of obtaining conductivity between opposing electrodes and insulating properties between adjacent electrodes.
  • the conductive particles contained in the conductive adhesive enable conduction between the counter electrodes, while the insulation contained between the adjacent electrodes is ensured by the resin contained in the conductive adhesive, and the opposing electrodes are adhered to each other to bond the chip and the substrate. It is fixed.
  • the conductive particles are electrically conductive through the physical contact between the metal pads of the upper substrate and the lower substrate, so that the contact resistance is very large, the ultrafine pitch is difficult, and the repair characteristics are inferior.
  • the present invention is to solve the above problems, an object of the present invention is to ensure a sufficient electrical connection between the terminals such as opposing terminals, and through the metallurgical coupling by melting the conductive material between the terminals The same low electrical resistance as soldering can be obtained, and sufficient insulating property between adjacent terminals can be applied to ultrafine pitching, and it has excellent repair characteristics.
  • an object of the present invention is to ensure a sufficient electrical connection between the terminals such as opposing terminals, and through the metallurgical coupling by melting the conductive material between the terminals The same low electrical resistance as soldering can be obtained, and sufficient insulating property between adjacent terminals can be applied to ultrafine pitching, and it has excellent repair characteristics.
  • the present invention includes an insulating layer comprising a meltable conductive layer and an adhesive insulating resin that is not cured at the melting point of the conductive layer, wherein the adhesive layer is attached to the conductive layer and the insulating layer.
  • Heat dissipation particles that do not melt at the temperature at which the insulating resin is cured are optionally included.
  • the semiconductor mounting method of the present invention is a semiconductor mounting method having a plurality of component electrode pads corresponding to the plurality of component electrode pads on a substrate on which a plurality of substrate electrodes are formed, wherein the substrate electrode and the semiconductor chip electrode are formed. Disposing a conductive adhesive therebetween; and heating / pressurizing the conductive adhesive to a temperature that is higher than the melting point of the conductive layer and the curing of the adhesive layer is not completed. And forming a wetting region by spreading on the surfaces of the plurality of opposing semiconductor chip electrodes to enable electrical connection, wherein the adhesive insulating resin is flowed in a state where the curing is not completed, between the circuit board and the semiconductor chip. It is filled with the substrate electrode pad, the semiconductor chip electrode pad and the wetting region Curing step and the adhesive insulating resin to insulate the term junction between those and a step of bonding the circuit board and the semiconductor chip.
  • the conductive adhesive includes an insulating layer including a meltable conductive layer and an adhesive insulating resin that hardening is not completed at the melting point of the conductive layer, wherein the adhesive insulating resin is cured on the conductive layer and the insulating layer. Radiating particles that do not melt at a temperature may be optionally included.
  • the present invention may include a meltable conductive particle, an adhesive insulating resin that hardening is not completed at the melting point of the conductive particle, and heat dissipating particles that are not melted at a temperature at which curing of the adhesive insulating resin is completed.
  • the conductive adhesive may be formed into a paste or a film to be entirely filled, or may be locally filled to each terminal.
  • the semiconductor level package of the present invention is constructed by applying a conductive adhesive to the surface of a wafer on which a semiconductor chip is formed and dicing.
  • the present invention can secure sufficient electrical connection between terminals such as opposite terminals, and has excellent thermal conductivity during the heating / pressing process by the heat-dissipating particles, prevents short circuits by the conductive particles, and generates internally. There is an effect that can easily release the heat.
  • FIG. 1 and 2 is a block diagram of a conductive adhesive according to a first embodiment of the present invention.
  • 3 to 5 are conceptual views illustrating a method for mounting a semiconductor according to a first embodiment of the present invention.
  • FIG. 6 is a block diagram of a conductive adhesive according to a second embodiment of the present invention.
  • FIG. 7 and 8 are conceptual views illustrating a method for mounting a semiconductor according to a second embodiment of the present invention.
  • 9 and 10 are conceptual views illustrating a method of manufacturing a wafer level package according to an embodiment of the present invention.
  • the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.
  • 'wetability' refers to a property in which a liquid or a solid spreads on a solid surface, and defines an extent of adhesion, adhesion, or adhesion of an adhesive to a solid surface.
  • 1 to 2 are structural diagrams of a conductive adhesive according to a first embodiment of the present invention.
  • the conductive adhesives 10 and 11 are insulated including a meltable conductive layer 2 and an adhesive insulating resin 5 whose curing is not completed at the melting point of the conductive layer 2.
  • Anisotropic comprising a layer (3), wherein the conductive layer (2) and the insulating layer (3) optionally contain heat-dissipating particles (4) that do not melt at a temperature at which curing of the adhesive insulating resin (5) is completed It consists of a conductive film.
  • the conductive layer 2 and the insulating layer 3 may be alternately stacked, and the number of stacked layers may be even or odd.
  • the conductive layer 2 is meltable at low temperature or high temperature, and is composed of a metal or an alloy and includes at least one sublayer.
  • the conductive layer 2 may include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), and cadmium (Cd). ), One or two or more sublayers containing metals such as gallium (Ga), silver (Ag), tarium (Tl), or one or two or more sublayers containing alloys made of such metals. .
  • the conductive layer 2 may be formed of at least one selected from the group consisting of metals, nonmetals, and alloys having a relatively low melting point, and the low melting point alloy has a melting point (melting point) of 183.
  • Sn-57Bi, Sn-52In, Sn-44In-14Cd, etc. having a lower melting point based on Sn-37Pb, which is °C, Sn-3.5Ag, Sn-2.5Ag-10Sb, Sn-4.7Ag-1.7Cu And the like can be used.
  • the conductive layer 2 is not necessarily limited thereto, and any conductive metal 2 may be used as long as it is melted at a temperature lower than a temperature at which curing of the adhesive insulating resin 5 is completed.
  • the conductive layer 2 may be formed by mixing the above-mentioned metal and the alloy, or may be used by mixing another metal or alloy with the above-mentioned metal or alloy.
  • the conductive layer 2 takes the form of a plate composed of one or a plurality of layers, the conductive layer 2 has an effect of excellent cohesiveness at the time of melting as compared with the case in which the conductive layer 2 is dispersed and formed in the form of conventional particles.
  • the heat radiating particles 4 are selectively included in the conductive layer 2 or the insulating layer 3 to increase the thermal conductivity.
  • the heat dissipation particles 4 may shorten the process time due to rapid heat conduction during heating / pressurization for mounting the semiconductor chip on the substrate, and has an effect of rapidly dissipating heat generated after mounting to the outside.
  • the heat-dissipating particles (4) has a melting point higher than the heating temperature at the time of adhesion to withstand heat and pressure, preferably a material that does not melt at a temperature at which curing of the adhesive insulating resin (5) is completed Can be.
  • the heat dissipation particles 4 may be variously selected from several nm to several tens of micrometers, and may be configured to be smaller than the final bonding distance between the substrate and the electrode of the electronic material.
  • the heat-dissipating particles 4 may have a different shape than a spherical shape, and the particles may include spherical particles having different diameters to increase the contact area.
  • the heat dissipation particles 4 may be formed of a non-conductive material.
  • polymer particles such as Teflon and polyethylene or silicon-based materials such as alumina, silica, glass, and silicon carbide may be used. It may be used and may be composed of a mixture thereof.
  • the non-conductive heat-dissipating particles (4) is located between the wetting (wetting) region of the conductive layer (2) serves to prevent the short circuit between the conductive layer (2).
  • the heat-dissipating particles 4 when included in a volume ratio of 50% or more, conduction may be inhibited between the electrode terminals by the heat-dissipating particles 4 having electrically non-conductivity, and when included in a volume ratio of less than 3%, sufficient heat conduction. No effect will be obtained.
  • the heat dissipation particle 4 is made of a non-conductive material
  • the heat dissipation particle 4 is preferably contained in a volume ratio of 3% to 50% in the conductive adhesive.
  • the heat-dissipating particles (4) may be composed of a conductive material, for example, one selected from the group consisting of gold, silver, copper, tungsten, carbon nanotubes (CNT), graphite and mixtures thereof. The above can be selected.
  • the conductive layer 2 when the conductive layer 2 is melted and combined with the metal terminal during heating / pressurization, the conductive layer 2 has sufficient conductivity even when the heat-dissipating particles 4 are included therein so that the current between terminals is short-circuited. Does not occur.
  • the heat dissipation particles 4 may be not only composed of a conductive material or a non-conductive material, but may be modified in various forms included in an adhesive to perform a heat dissipation function.
  • the non-conductive material and the conductive material may be alternately coated or the polymer particles may be alternately coated with the conductive material or the non-conductive material.
  • the adhesive insulating resin 5 may be used without limitation as long as curing is not completed at the melting temperature of the conductive layer 2.
  • it may be at least one selected from the group consisting of a thermoplastic resin, a thermosetting resin and a photocurable resin.
  • thermoplastic resin examples include vinyl acetate resin, polyvinyl butynal resin, vinyl chloride resin, styrene resin, vinyl methyl ether resin, grevyl resin, ethylene-vinyl acetate copolymer resin, styrene-butadiene copolymer resin, poly Butadiene resin, polyvinyl alcohol resin, and the like
  • thermosetting resins include epoxy resins, urethane resins, acrylic resins, silicone resins, phenolic resins, melamine resins, alkyd resins, urea resins, and unsaturated polyester resins. Etc. can be used.
  • photocurable resin mixes a photopolymerizable monomer, a photopolymerizable oligomer, a photoinitiator, etc., and has a characteristic that a polymerization reaction is started by light irradiation.
  • photopolymerizable monomers and photopolymerizable oligomers include (meth) acrylic acid ester monomers, ether (meth) acrylates, urethane (meth) acrylates, epoxy (meth) acrylates, amino resins (meth) acrylates, and unsaturated polyesters. , Silicone resins and the like can be used.
  • the conductive layer 2 and the insulating layer 3 may further include at least one of a flux, a surface active agent, and a curing agent.
  • a surface activation resin having a surface activation effect of activating the surface of the conductive particles or the surface of the electrode pad may be used as the adhesive insulating resin.
  • the surface-activated resin has a reducing property for reducing the surface of the conductive particles or the surface of the electrode pad.
  • a resin that heats and liberates an organic acid can be used.
  • thermosetting resin the resin is heated and cured to a temperature where the curing of the resin is completed.
  • thermoplastic resin the resin is cooled to the curing temperature of the resin and cured, and the photocurable resin is used. When it does, it irradiates, starts a polymerization reaction, and hardens
  • thermoplastic resin in the case of using a thermoplastic resin, it is expected to have excellent water-retaining property through re-heating in case of fine cracking, breakage, and defect of the connection part.
  • heating is required only until the conductive layer component is melted.
  • Using a low melting point can be expected to be applicable to devices with poor heat resistance.
  • the conductive adhesive according to the embodiment of the present invention may further contain a flux, a surface active agent, a curing agent, and the like in the conductive layer 2 and the insulating layer 3 in addition to the main constituent material.
  • the flux is not particularly limited, and examples thereof include reducing agents such as resins, inorganic acids, amines, and organic acids. Flux is reduced by removing foreign substances such as oxides on the surface of the molten conductive layer or the surface of the upper and lower electrode pads to change into soluble and fusible compounds. In addition, surface foreign matter is removed to cover the surface of the conductive layer and the upper and lower electrode pads to be cleaned to prevent reoxidation.
  • reducing agents such as resins, inorganic acids, amines, and organic acids. Flux is reduced by removing foreign substances such as oxides on the surface of the molten conductive layer or the surface of the upper and lower electrode pads to change into soluble and fusible compounds. In addition, surface foreign matter is removed to cover the surface of the conductive layer and the upper and lower electrode pads to be cleaned to prevent reoxidation.
  • the surface active agent is not particularly limited, and examples thereof include glycols such as ethylene glycol and glycerin, organic acids such as maleic acid and azipine acid, amine compounds such as amines, amino acids, organic acid salts of amines, and halogen salts of amines and inorganic acids. Foreign substances on the surface of the molten conductive particles or the surface of the opposite upper and lower electrode pads are dissolved and removed by using an inorganic acid salt or the like.
  • the flux or the surface active agent has a boiling point higher than the melting point of the conductive layer and lower than the temperature at which curing of the resin is completed.
  • curing agent is not specifically limited,
  • an indication resin amide, imidazole, etc. can accelerate hardening of an epoxy resin.
  • the insulating layer 3 is composed of an adhesive insulating resin 5 that hardening is not completed at the melting point of the conductive layer 2, the insulating layer 3 may further include heat radiation particles (4).
  • the insulating layer 3 has the effect of increasing the adhesive strength by the adhesive insulating resin 5 and has the advantage of increasing the electrical insulation effect between the plurality of terminals by filling the space between the electrode terminals.
  • the adhesive insulating resin 5 and the heat dissipation particle 4 have been described above, the same description is omitted.
  • 3 to 5 are conceptual views illustrating a method for mounting a semiconductor according to a first embodiment of the present invention.
  • the semiconductor mounting method according to the embodiment of the present invention is formed on the meltable conductive layers 101, 201, and 301 and the conductive layers 101, 201, and 301, and At the temperature at which the curing of the adhesive insulating resins 104, 204 and 304 and the insulating layers 102, 202 and 302 including the adhesive insulating resins 104, 204 and 304 are not completed at the melting point.
  • the conductive adhesive (100, 200, 300) is the same as the conductive adhesive (10, 11) described with reference to FIGS. 1 and 2, duplicate description will be omitted.
  • the conductive adhesives 100, 200, and 300 shown in FIGS. 3 to 5 have the same method for mounting semiconductors of the conductive layers 101, 201, and 301 and the insulating layers 102, 202, and 302.
  • the adhesive insulating resin having no curing completed (The conductive layer 101 in the 104 forms a plurality of conductors 101 so that they can flow freely, and the conductive region 101 is wetted on the surfaces of the electrodes 111 and 121 so that the wetting region is wetted.
  • 105 is formed to electrically connect the plurality of semiconductor chip electrodes 121 opposed to the plurality of substrate electrodes 111, respectively.
  • the adhesive insulating resin 104 which is not cured is flowed and filled between the circuit board 110 and the semiconductor chip 120, and the substrate electrode 111, the semiconductor chip electrode 121, and the like. Insulate between the electrical junctions.
  • the adhesive insulating resin 104 may be cured to bond the circuit board 110 to the semiconductor chip 120.
  • the conductive layer 101 is melted to form the wetting region 101 to form chemical bonds such as metal bonds between the terminals, and the terminals facing each other are connected by chemical bonds.
  • the electrical resistance between the terminals can be obtained at the same level as that of the metal junction, thereby obtaining a highly reliable electrical connection between the terminals.
  • the conductive layer 101 takes the form of a plate composed of one or a plurality of layers, wetting regions of the electrodes 111 and 121 are excellent in cohesiveness when melting, as compared with a case in which the conductive layer 101 is dispersed and formed in the form of conventional particles.
  • Form 105 since the conductive layer 101 takes the form of a plate composed of one or a plurality of layers, wetting regions of the electrodes 111 and 121 are excellent in cohesiveness when melting, as compared with a case in which the conductive layer 101 is dispersed and formed in the form of conventional particles.
  • the electrical joint is remelted by partially or totally reheating at a temperature higher than the melting point of the conductive layer.
  • the heat dissipation particles having high thermal conductivity are finely formed compared to the conductive layer and have a high melting point, so that the heat dissipation characteristics are evenly distributed to the outside without disturbing the conductive path during heating / pressurization.
  • FIG. 6 is a block diagram of a conductive adhesive according to a second embodiment of the present invention.
  • the conductive particles 22 that can be melted, the adhesive insulating resin 5 that hardening is not completed at the melting point of the conductive particles, and the curing of the adhesive insulating resin 4 are completed. It includes heat dissipation particles (4) that do not melt at the temperature.
  • the conductive particles 22 of the conductive adhesive according to the embodiment of the present invention are melted upon heating, they have a volume ratio of 10 to 60% in the conductive adhesive.
  • the volume ratio of the conductive particles 22 is less than 10%, the degree of dispersion in the adhesive insulating resin 5 decreases, and when the volume ratio exceeds 60%, the conductive particles 22 are densely disposed so that the conductive particles 22 This is because there is a possibility that the mixed state of the resin layer and the adhesive insulating resin 5 becomes nonuniform.
  • the conductive adhesive 30 according to the second embodiment of the present invention may be formed into a paste or may be formed into a film.
  • the conductive particles 22 may be made of the same material as the conductive layer of the conductive adhesive according to the first embodiment, but may be formed in the form of particles rather than the conductive layer, and the heat radiating particles 4 may be formed of the conductive particles ( 22) to about 1/2 to 1/10 of the average particle diameter.
  • the conductive adhesive is meltable conductive particles 22, the adhesive insulating resin (5) cured at a temperature lower than the melting point of the conductive particles 22, and the heat radiation particles (4) having a higher melting point than the conductive particles It may be configured in the form of a paste or film containing.
  • the conductive particles 2 may be formed of tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), or zinc (Zn) having a melting point higher than the curing temperature of the adhesive insulating resin 5.
  • Zn lead (Pb), cadmium (Cd), gallium (Ga), silver (Ag) and tarium (Tl) and the like, in addition to the general high melting point alloy may be selected.
  • FIG. 7 to 8 are schematic views of a semiconductor mounting method according to a second embodiment of the present invention.
  • the positive electrode terminals 31 and 32 are disposed to face each other, and the conductive adhesive 30 according to the second embodiment of the present invention is filled therebetween.
  • the conductive adhesive 30 is entirely filled between the positive electrode terminals 31 and 32 as shown in FIG. 7. (At this time, although not shown in the drawing, even when a plurality of electrode terminals are formed on the substrate and the semiconductor chip, the entirety may be filled between the substrate and the semiconductor chip.)
  • the conductive particles 22 are heated to a predetermined temperature so that they can be melted, and are pressed to narrow the gap between the electrode terminals 31 and 32.
  • the adhesive insulating resin 5 has a viscosity of several tens to hundreds of cps, and the molten conductive particles 22 are fused with neighboring conductive particles 22 to form both electrode terminals 31, Wetting areas 33 are formed that electrically connect between the 32.
  • wetting regions 33a, 33b, and 33c may be locally formed according to the fusion form of the conductive particles 22.
  • the heat-dissipating particles (4) has a melting point higher than the conductive particles (22) as described above, the size is configured to be smaller so that the molten conductive particles 22 are fused to electrically between the substrate (31, 32) When connected, the wetting region 33 may be separated and evenly distributed to the outside of the adhesive.
  • the adhesive insulating resin 5 is cured to insulate portions other than the wetting region 33. That is, the space other than the wetting region 33 is insulated between the opposing substrates 31 and 32.
  • the curing method of the resin may proceed differently depending on the type of the adhesive insulating resin (5).
  • the semiconductor mounting method is not necessarily limited thereto, and as shown in FIG. 8, the conductive adhesive 30 is formed into a paste to be locally formed on either side of the electrode terminal 35a of the part or the electrode terminal 36a of the substrate.
  • the filling region 33 may be filled and heated / pressurized to form a wetting region 33 between the positive electrode terminals 35a and 36a, or may be formed between the substrate and the semiconductor chip by forming a conductive adhesive 30 on a film.
  • the semiconductor mounting method using the conductive adhesive 30 can be applied in the same manner as described above.
  • the conductive particles 22 and the heat-dissipating particles 4 are not melted during the heating / pressing process, whereas the adhesive insulating resin 5 is melted to have a viscosity of several tens to hundreds of cps. 22 is free to flow and is constrained between the electrodes (31, 32 in FIG. 7 or 35a, 36a in FIG. 8) to electrically connect the two electrodes by mechanical / physical coupling.
  • 9 and 10 are conceptual diagrams of a wafer level package according to an embodiment of the present invention.
  • a wafer level package according to an embodiment of the present invention is formed by placing a conductive adhesive 500 on a surface of a wafer 400 on which a plurality of semiconductor chips (not shown) are formed and dicing the wafer 400. .
  • the conductive adhesive 500 may be manufactured in the form of a paste or a film to be formed on the wafer 400.
  • the conductive adhesive 500 includes conductive particles 22 and heat-dissipating particles 4 and insulating resins 5 which do not melt at the melting point of the conductive particles 22, and are conductive in the adhesive insulating resin without classifying the layers.
  • Particles and heat dissipation particles may be configured in a dispersed form.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

La présente invention se rapporte à un adhésif conducteur anisotrope, à un procédé de montage d’un semi-conducteur faisant appel à cet adhésif, ainsi qu’à une encapsulation sur semi-conducteurs. Ledit adhésif comprend : une colle conductrice qui comporte des particules conductrices pouvant fondre, une résine isolante adhésive qui n’est pas complètement durcie au point de fusion desdites particules conductrices, et des particules résistantes à la chaleur qui ne fondent pas à une température en dessous de laquelle la résine isolante adhésive est complètement durcie ; et une couche d’isolation qui comporte une couche conductrice pouvant fondre ainsi qu’une résine isolante adhésive qui ne prend pas complètement au point de fusion de la couche conductrice, la couche conductrice et la couche d’isolation comprenant sélectivement des particules résistantes à la chaleur, qui ne fondent pas à une température en dessous de laquelle la résine isolante adhésive est complètement durcie.
PCT/KR2010/002390 2009-08-14 2010-04-16 Adhésif conducteur, procédé de montage d’un semi-conducteur faisant appel à cet adhésif, et encapsulation sur tranches WO2011019132A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090075214A KR101182714B1 (ko) 2009-08-14 2009-08-14 이방성 도전 접속제를 이용한 반도체 실장방법
KR10-2009-0075214 2009-08-14
KR10-2009-0110523 2009-11-16
KR1020090110523A KR101637401B1 (ko) 2009-11-16 2009-11-16 도전성 접착제, 이를 이용한 반도체의 실장방법 및 웨이퍼 레벨 패키지

Publications (1)

Publication Number Publication Date
WO2011019132A1 true WO2011019132A1 (fr) 2011-02-17

Family

ID=43586291

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002390 WO2011019132A1 (fr) 2009-08-14 2010-04-16 Adhésif conducteur, procédé de montage d’un semi-conducteur faisant appel à cet adhésif, et encapsulation sur tranches

Country Status (1)

Country Link
WO (1) WO2011019132A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9192443B2 (en) 2012-02-06 2015-11-24 Hyprotek, Inc. Combined cap applicators
US9253987B2 (en) 2010-01-22 2016-02-09 Hyprotek, Inc. Antimicrobial agents and methods of use
CN107083206A (zh) * 2017-05-23 2017-08-22 深圳市华星光电技术有限公司 导电胶的制备方法及导电胶
US9789005B2 (en) 2009-09-02 2017-10-17 Hyprotek, Inc. Antimicrobial medical dressings and protecting wounds and catheter sites
CN108922959A (zh) * 2013-03-28 2018-11-30 东芝北斗电子株式会社 发光装置、及使用发光装置的装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040105832A (ko) * 2002-04-02 2004-12-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 도전성 및 열전도성을 갖는 열경화성 접착 시트
KR100622578B1 (ko) * 2000-02-21 2006-09-13 주식회사 새 한 전기적 접속신뢰성이 우수한 이방도전성 접착용 필름
KR100724720B1 (ko) * 2005-11-02 2007-06-04 중앙대학교 산학협력단 도전성 접착제와 이 도전성 접착제를 이용한 단자간의 접속 방법
KR20090037961A (ko) * 2006-08-28 2009-04-16 가부시키가이샤 무라타 세이사쿠쇼 도전성 접합재료 및 전자장치
KR20090045195A (ko) * 2006-08-25 2009-05-07 스미토모 베이클리트 컴퍼니 리미티드 접착 테이프, 접합체 및 반도체 패키지

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622578B1 (ko) * 2000-02-21 2006-09-13 주식회사 새 한 전기적 접속신뢰성이 우수한 이방도전성 접착용 필름
KR20040105832A (ko) * 2002-04-02 2004-12-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 도전성 및 열전도성을 갖는 열경화성 접착 시트
KR100724720B1 (ko) * 2005-11-02 2007-06-04 중앙대학교 산학협력단 도전성 접착제와 이 도전성 접착제를 이용한 단자간의 접속 방법
KR20090045195A (ko) * 2006-08-25 2009-05-07 스미토모 베이클리트 컴퍼니 리미티드 접착 테이프, 접합체 및 반도체 패키지
KR20090037961A (ko) * 2006-08-28 2009-04-16 가부시키가이샤 무라타 세이사쿠쇼 도전성 접합재료 및 전자장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9789005B2 (en) 2009-09-02 2017-10-17 Hyprotek, Inc. Antimicrobial medical dressings and protecting wounds and catheter sites
US9253987B2 (en) 2010-01-22 2016-02-09 Hyprotek, Inc. Antimicrobial agents and methods of use
US9192443B2 (en) 2012-02-06 2015-11-24 Hyprotek, Inc. Combined cap applicators
US10080620B2 (en) 2012-02-06 2018-09-25 Hyprotek, Inc. Portable medical device protectors
US10617472B2 (en) 2012-02-06 2020-04-14 Hyprotek, Inc. Adhesive patch with antimicrobial composition
CN108922959A (zh) * 2013-03-28 2018-11-30 东芝北斗电子株式会社 发光装置、及使用发光装置的装置
CN107083206A (zh) * 2017-05-23 2017-08-22 深圳市华星光电技术有限公司 导电胶的制备方法及导电胶

Similar Documents

Publication Publication Date Title
US5903056A (en) Conductive polymer film bonding technique
TW533507B (en) An electronic device an electronic device sealing method and an electronic device connecting method
WO2011007947A1 (fr) Adhésif conducteur anisotrope pour adhésion d’ondes ultrasonores, et procédé de connexion de parties électroniques utilisant ledit adhésif
WO2011019132A1 (fr) Adhésif conducteur, procédé de montage d’un semi-conducteur faisant appel à cet adhésif, et encapsulation sur tranches
JP3801666B2 (ja) 電極の接続方法およびこれに用いる接続部材
JP2000340614A (ja) 半導体素子の実装方法
JP2017504189A (ja) フリップチップ・タイプの電子デバイス、およびフリップチップ・タイプの電子デバイスを製造するための方法
KR20120122389A (ko) 이방성 도전 접착제 및 이를 이용한 반도체 실장 방법
KR101644849B1 (ko) 이방성 도전성 접착제 및 이를 이용한 반도체 실장 방법
JP4032317B2 (ja) チップ実装法
KR100777255B1 (ko) 이방성 도전 필름 및 이를 이용한 전자부품의 실장방법
JP3959654B2 (ja) マルチチップ実装法
JP3856233B2 (ja) 電極の接続方法
JP2000133050A (ja) 異方性導電膜及び導電接続構造体
KR100724720B1 (ko) 도전성 접착제와 이 도전성 접착제를 이용한 단자간의 접속 방법
JP2006352166A (ja) マルチチップ実装法
KR101666040B1 (ko) 이방성 도전성 접착제, 이를 이용한 반도체의 실장방법 및 웨이퍼 레벨 패키지
KR101182714B1 (ko) 이방성 도전 접속제를 이용한 반도체 실장방법
JP3679618B2 (ja) 絶縁被覆導電性微粒子、異方性導電接着剤及び導電接続構造体
KR101637401B1 (ko) 도전성 접착제, 이를 이용한 반도체의 실장방법 및 웨이퍼 레벨 패키지
JP4223581B2 (ja) マルチチップ実装法
JP4045471B2 (ja) 電子部品実装法
JP2004031975A (ja) 接続装置
JP2007184653A (ja) マルチチップモジュールの実装方法
JP2007049179A (ja) マルチチップ実装法及びそれに用いる硬化性フィルム状接着剤

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10808281

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10808281

Country of ref document: EP

Kind code of ref document: A1